# Dual MOSFET, Dual P Channel, 20 V, 9 A

![Product image](https://novapart.co/image/farnell:2468013RL/)

**URL**: https://novapart.co/products/IRF7324TRPBF/dual-mosfet-p-channel-20-v-9-a
**SKU**: IRF7324TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €1.2600
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Dual P Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | - |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | - |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | - |
| Continuous Drain Current Id P Channel | 9A |
| Drain Source On State Resistance N Channel | - |
| Drain Source On State Resistance P Channel | 0.018ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468013RL/)

## IRF7324PbF 

## HEXFET[®] Power MOSFET 

- Trench Technology 

- Ultra Low On-Resistance 

- Dual P-Channel MOSFET 

- Low Profile (<1.1mm) 

- Available in Tape & Reel 

- 2.5V Rated 

- Lead-Free 

## **Description** 

New trench HEXFET[®] Power MOSFETs  from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the ruggedized  device  design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. 

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S1 1 8 D1<br>G1 2 7 D1 VDSS = -20V<br>“1GTi<br>S2 3 6 D2<br>G2 4 5 D2 R  = 0.018Ω<br>“alel DS(on)<br>Top View<br>SO-8<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

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SC Parameter Max. Units<br>VDS Drain-Source Voltage -20 V<br>esee<br>SC ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -9.0<br>ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -7.1 A<br>a IDM Pulsed Drain Current © -71<br>a PD @TA = 25°C Maximum Power Dissipation 2.0 W<br>a PD @TA = 70°C Maximum Power Dissipation 1.3 W<br>                                  Linear Deratin a g Factor                                                                       16                               mW/°C<br>a VGS                                      Gate-to-Source Voltage                                                              ± 12                                  V<br>TJ , TSTG Junction and Storage Temperature Range -55  to + 150 °C<br>a<br>**----- End of picture text -----**<br>


|**Thermal Resistance**|||
|---|---|---|
|**Parameter                            Max.**<br>**Units**<br>RθJA<br>Maximum Junction-to-Ambient<br>62.5                                  °C/W<br>~~Se~~|||
|www.irf.com||1|



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~Od~~|~~rs rs~~|~~rs~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>rs|**Min. **<br>rs<br>~~Od~~<br>~~Ors~~|**Typ. **<br>rs<br>~~rs rs~~<br>~~GG~~|**Max.**<br>rs<br>~~rs~~<br>~~GG~~|**Units**<br>rs<br>~~GG~~|**Conditions**<br>rs|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~rs~~|-20<br>~~Od ~~<br>~~rs~~<br>~~Ors~~<br>~~rs~~|–––<br> ~~rs rs~~<br>~~rs~~<br>~~GG~~<br>~~rs~~|–––<br>~~rs~~<br>~~rs~~<br>~~GG~~<br>~~rs~~|V<br>~~rs~~<br>~~GG~~<br>~~Oe~~|VGS= 0V, ID= -250µA<br>~~rs~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~rs~~|–––<br>~~Ors~~<br>~~rs~~<br>~~rs~~<br>~~I—|~~|-0.02<br>~~GG~~<br>~~rs~~<br>~~rs~~<br>~~I—|~~|–––<br>~~GG~~<br>~~rs~~<br>~~rs~~<br>~~I—|~~|V/°C<br>~~GG~~<br>~~rs~~<br>~~Oe~~|Reference to 25°C, ID= -1mA<br>~~rs~~<br>~~sr~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~CE~~|–––<br>~~rs ~~<br>~~CE~~<br>~~I—|~~|––– <br> ~~rs ~~<br>~~CE~~<br>~~I—|~~<br>||0.018<br> ~~rs~~<br>~~CE~~<br>~~I—|~~<br>|||Ω<br>~~Oe~~<br>~~CE~~<br>|<br>~~ss~~|VGS= -4.5V, ID= -9.0A<br>~~CE~~<br>~~sr~~|
|||~~CE~~<br>~~I—|~~<br>~~Gs~~|––– <br>~~CE~~<br>~~I—|~~<br>|<br>~~rr~~|0.026<br>~~CE~~<br>~~I—|~~<br>||<br>~~ss~~||VGS= -2.5V, ID= -7.7A<br>~~CE~~<br>~~sr~~|
|VGS(th)|Gate Threshold Voltage<br>~~rs~~|-0.45<br>~~I—|~~<br>~~rs~~<br>~~Gs~~<br>~~Gre~~|–––<br>~~I—|~~<br>|<br>~~rs~~<br>~~rr~~<br>~~Gr~~|-1.0<br>~~I—|~~<br>| |<br>~~rs~~<br>~~ss~~|V<br>|<br>~~rs~~<br>~~ss~~|VDS= VGS, ID= -250µA<br>~~sr~~<br>~~rs~~|
|gfs|Forward Transconductance<br>~~rs~~<br>~~tk~~|19<br>~~Gs ~~<br>~~rs~~<br>~~Gre~~<br>~~tk~~|–––<br> ~~rr ~~<br>~~rs~~<br>~~Gr~~<br>~~tk~~|–––<br> ~~ss~~<br>~~rs~~<br>~~tk~~|S<br>~~ss~~<br>~~rs~~<br>~~tk~~|VDS= -10V, ID= -9.0A<br>~~rs~~|
|IDSS|Drain-to-Source Leakage Current<br>~~tk~~|–––<br>~~Gre ~~<br>~~tk~~|–––<br> ~~Gr~~<br>~~tk~~|-1.0<br>~~tk~~|~~tk~~<br>~~a~~|VDS= -16V, VGS= 0V|
|||–––<br>~~tk~~<br>~~a~~|–––<br>~~tk~~<br>~~a~~|-25<br>~~tk~~<br>~~a~~||VDS= -16V, VGS= 0V, TJ= 125°C<br>~~a~~|
||Gate-to-Source Forward Leakage<br>~~tk~~<br>~~a~~<br>~~ee~~|–––<br>~~tk~~<br>~~a~~<br>~~ee~~|–––<br>~~tk~~<br>~~a~~|-100<br>~~tk~~<br>~~a~~|~~tk~~<br>eg<br>~~PO~~|VGS= -12V<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~|100<br>~~a~~||VGS= 12V<br>~~PO~~|
|Qg|Total Gate Charge<br> <br>~~i~~|–––<br> ~~ee~~<br>~~i~~<br>ee|42<br>~~i~~|63<br>~~i~~|nC<br>~~PO~~|ID= -9.0A<br>VDS= -16V<br>VGS= -5.0V<br>~~PO~~|
|Qgs|Gate-to-Source Charge<br>~~i~~<br>~~ee~~|–––<br>~~i~~<br>~~ee~~<br>ee|7.1<br>~~i~~<br>~~ee~~|11<br>~~i~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|12<br>~~ee~~|18<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~<br>ee<br>ee|17<br>~~es~~|–––||VDD= -10V<br>ID= -1.0A<br>RG= 6.0Ω<br>RD= 10Ω<br>~~@~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee<br>~~e~~~~**e**~~<br>|36<br>~~ee~~|–––|||
|td(off)|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~e~~~~**e**~~<br>~~e~~|170<br>~~ee~~|–––|||
|tf|Fall Time<br>~~ee~~|–––<br>~~e~~~~**e**~~<br>~~e~~<br>ee|190|–––|||
|Ciss|Input Capacitance<br>~~ee ~~<br>~~ee~~|–––<br>~~e~~~~**e**~~<br> ~~e~~<br>~~ee~~<br>ee<br>ee|2940<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -15V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|630<br>~~ee~~|–––|||
|Crss|Reverse Transfer Capacitance|–––<br>ee|420|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~ee~~<br>~~—-—~~|**Parameter**<br>~~ss~~<br>~~—-—EH~~|**Min. **<br>~~ss~~<br>~~EH~~|**Typ. **<br>~~EH~~|**Max.**<br>~~EH~~|**Units**<br>~~EH~~|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~ee~~<br>~~—-—~~|Continuous Source Current<br>(Body Diode)<br>~~ss~~<br>~~—-—EH~~|~~ss~~<br>~~EH~~|~~EH~~|2.0<br>~~EH~~|~~EH~~<br>~~es~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~es~~|
|ISM<br>~~—-—~~<br>~~Rses~~<br>~~$$~~|Pulsed Source Current<br>(BodyDiode)<br>~~—-—EH~~<br>~~es~~<br>~~$$~~|~~EH~~<br>~~es~~<br>~~ss~~|~~EH~~<br>~~es~~<br>~~ss~~|-71<br>~~EH~~<br>~~es~~|||
|VSD<br>~~—-—~~<br>~~Rses~~<br>~~$$~~<br>~~a~~|Diode Forward Voltage<br>~~—-— EH~~<br>~~es~~<br>~~$$~~<br>~~ttt~~|–––<br>~~EH~~<br>~~es~~<br>~~ss~~<br>~~ttt~~|–––<br>~~EH~~<br>~~es~~<br>~~ss~~<br>~~ttt~~|-1.2<br>~~EH~~<br>~~es~~<br>~~ttt~~|V<br>~~EH~~<br>~~es~~|TJ= 25°C, IS= -2.0A, VGS= 0V<br>~~es~~<br>~~lis~~|
|trr<br>~~Rses~~<br>~~$$~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~<br>~~ttt~~<br>ee|180<br>~~es~~<br>~~ss~~<br>~~ttt~~<br>ee|270<br>~~es~~<br>~~ttt~~|ns<br>~~es~~|TJ= 25°C, IF= -2.0A<br>di/dt = -100A/µs<br>~~es~~<br>~~lis~~<br>@|
|Qrr<br>~~$$~~<br>~~a~~|Reverse Recovery Charge<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~ss~~<br>~~ttt~~<br>ee|300<br>~~ss~~<br>~~ttt~~<br>ee|450<br>~~ttt~~|nC||



Repetitive rating;  pulse width limited by max. junction temperature. 

Pulse width ≤ 300µs : duty cycle ≤ 2%. Surface mounted on  FR-4 board, t ≤  10sec 

www.irf.com 

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 1000 VGS  1000 VGS<br>TOP -4.5V TOP -4.5V<br>-3.5V -3.5V<br>-2.5V -2.5V<br>-2.0V -2.0V<br> 100 -1.5V-1.3V A  100 -1.5V-1.3V Et||<br>-1.0V -1.0V<br>BOTTOM -0.75V pit peel eS eal BOTTOM -0.75V 7<br>| ee | eee eS ee<br> 10 22a  10 e r<br>— | Peri TT i ee ee ee<br> 1 20Ft]  1 GD:ee<br>$f Fh HSfp ~~CCEtt -0.75V S e e e<br>0.1 AE 0.1 2 || ||<br>-0.75V<br>aPee a 20µs PULSE WIDTHT  = 25J °C eeeie ee 20µs PULSE WIDTHT  = 150J °C<br>0.01 0.01<br>0.1  1  10  100 0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>2.0<br> 100 ID = -9.0A<br>TT eer PE ELE<br>PfeSPr<br>1.5<br>T  = 150  CJ °<br> 10<br>pee” 4EEEenE8 LEELA<br>SS ee {Lb<br>1.0<br>; | V7) T  = 25  CJ ft fT ° tf fT fT fT fT Tf pe? =<br>f|<br> 1 n/a PEt HH<br>=issSsssee== 0.5 CLL<br>eeeee<br>V      = -15VDS<br>20µs PULSE WIDTH VGS = -4.5V<br>0.1 PPPEP EE 0.0 GORA TODA OAGEREReee<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>-I   ,  Drain-to-Source Current (A) -I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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**==> picture [210 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
5000<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>Crss = Cgd<br>4000 | [| Coss = Cds + Cgd<br>—Re el<br>3000 Ciss<br>pe<br>eee l l<br>2000<br>ee l lll<br>1000 a<br>Coss<br>0 iSs Crss elll|<br> 1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>E T  = 150  CJ ° TT<br> 10 Po AYE<br>RSETT IlTATL EGEEREEE T  = 25  CJ ° rT {  AE| [ [<br> 1<br>PAA PE<br>eee eee<br>0.1 nePVE FEE EL ELL V      = 0 V GS<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>-V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [201 x 472] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ID = -9.0A<br>VDS =-16V<br>e e e<br>8<br>SE ES \<br>6<br>PT tt EL ELE LY<br>PLE TT ETLALE<br>4<br>FTPT ttEL tLEL YELLpe<br>2 EL<br>eee<br>0 YililtitSERRE AREEEEitt ttE<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>= r anm a:<br> 100 C o ConrCo<br>10us<br>Sraee ec anil 100us mail<br> 10<br>Sc ilimeai meal<br>1ms<br> T TCJ = 25  C= 150  C° ° a a 10ms<br> 1 e  Single Pulse e eel ilc t<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
10.0 pi ttt tt tt Vos ve<br>8.0<br>SEE EEE ve a<br>-<br>PL AK EE re | _— + ;<br>6.0 Pp} tT PAE °°<br>COCKE ve ≤ 1<br>≤ 0.1 %<br>4.0 Pt te EEN puyracor<br>Pit ;<br>Fig 10a.   Switching Time Test Circuit<br>2.0 Pit tT [EET] EE ETNTN j<br>td(on) tr td(off) tf<br>PEEP VGS a<br>0.0 10%<br>25 Pi 50 te 75 tT tT 100 yy 125 yf 150 | 7<br>T   , Case TemperatureC (  C)° |<br>\ / |<br>90%<br>Fig 9.   Maximum Drain Current Vs. VDS \_<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>S aSSee aeell<br>0.20<br> 10<br>0.10<br>isl aseeesnneal InnNIEaINTNICTIEST: SUIT Oe sop eee eee | a<br>0.05<br>S n ere an aee<br>| 0.02  ee ee PDM<br> 1<br>= 0.01 t1<br>ee a t2<br>SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>0.1 —ae rial PT cM 2. Peak T J = P DM x  Z thJA + TA<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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**==> picture [434 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.025 0.10 P f<br>0.08 P | |<br>\ TT<br>0.020 \ P f |<br>ID = -9.0A 0.06<br>NO e e ee ee<br>rh~~ | 0.04 E EE<br>0.015<br> = VGS = -2.5V |of<br>0.02 VGS = -4.5V<br>eee<br>T A i e<br>0.010 ee eee<br>0.00<br>2.0 2.5 3.0 3.5 4.0 4.5<br>0 10 20 30 40 50 60<br>VGS, Gate -to -Source Voltage  (V)<br>-ID , Drain Current (A)<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


## **Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

**==> picture [99 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
QG<br>QGS QGD<br>VG < an<br>Charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>VGS<br>(ay<br>-3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [291 x 271] intentionally omitted <==**

**----- Start of picture text -----**<br>
INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>j 6 eal H --EEE D .189 .1968 4.80 5.00<br>E 0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>Tr e a —— H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>ob ———— L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>_=o C y a<br>θ<br>0.10 [.004]<br>oom 8X b A1 [ : L f 8X L An 8X c Y<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER aApee<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>: 6.46 [.255] j [odd]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>0      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. Lid<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] Ano 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [174 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>eos) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION ss<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [154 x 68] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

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---

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