# Dual MOSFET, Dual N Channel, 30 V, 6.5 A, 0.029 ohm
**URL**: https://novapart.co/products/IRF7313TRPBFXTMA1/dual-mosfet-n-channel-30-v-65-a-0029-ohm
**SKU**: IRF7313TRPBFXTMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2130
**Stock**: 1000+
**Lead Time**: 106 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Dual N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Transistor Case Style | SO-8 |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 6.5A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.029ohm |
| Drain Source On State Resistance P Channel | - |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:4236345RL/)
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S1 1 8 D1
G1 2 7 D1 Voss = 30V
S2 3 6 D2
G2 4 5 D2 Rpgion) = 0.029 Ω
Top View
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SO-8
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Absolute Maximum Ratings ( T, = 25°C Unless Otherwise Noted)
Maximum
Symbol | __ 30 |
V
#20
Continuous Drain Current© Ta = 29°C ID po SH
Ta = 70°C 5.2
30
25
. rer Ta = 25°C 2.0
PD
Mesmum Foner Desenin ise] gs
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θ
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Parameter————=(Min.[Typ.[Max.
[Viempss[| [Units] Conditions ‘|
∆ ∆
F Vass Ty_|Drain-to-Source[Breakdown VoltageBreaklownTemp. CoefficientVottage || 30 |0.022|——| — — || Vi°CV || Vas=OV,lp=Reference to 25°C,250AIn=1mA
Ω
Feson [Site Oaninsoure Onsestany | |—Togsfaods| __Ves=aSV b= 478
[Vase [= [o.03200.046
Transconductance————=s[—-|
fasse [Forward[Gate [ewesnnatamecnes] Threshold Votage «(1.0|14|——|—-|[[—— | SV ||fsaeVos=15V,lp=58AVos=Ves lo=na 250Asorrcee—
‘lossGss [ Gaieenurce Gateto-Source Rows Leanne [fazeSr: | nA heecey
(|
Sgfa; |TetaiGate ChargR e verse Leakage || 22—|| -100 33 || t= BBA
[Oy ——fesetsnoe tore Sef Sa we [wets
Rion | Gate-to-Drain (Willer) Charge [| 64[96 |__| Vas= 10V, See Fig. 100
'(RiseTime——SSS~=~“—~‘“*~*~s*SCY CB lp = 1.08
ff _[Turn-On Delay Time «|| 81| 12 Voo = 18V
Ω
fon __|TummOff Delay Time ——=SSS*d | (28 | 88 R= 60
SSCs Ω
[Css fe siFaliTime | 28 Ro=15 @
[Coss [Input Capacitance ——~=S~«*d | 080] Vas = OV
[Crs [ ReverseOutput TransferCapacitanceCapacitance~~~||| 190,820 — | pF | Vos=25Vf= 1.0MHz, See Fig.8
Source-Drain Ratings and Characteristics
| Is | Continuous Parameter Source Current | Min. |Typ. [Max. [Units] [Conditions] MOSFET symbol D
G
Io Pulsed Source Current A integral reverse
[Veo__[Diode Forward Voltage === —— [078 [ 10 | V [T= 25°C, ls=17A Ves=OVO | S
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≤ ≤ ≤ ≤ 150°C
Rg=25_ Ω , lag= 4.0A.
≤ 300ys; duty cycle ≤ 2%. on FR-4 board, t ≤
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100 TOP 15V ves}
10V
7.0V 5.5V eeee
4.5V
4.0V ee eee
3.5V
BOTTOM 3.0V
10
| V7 \ 3.0V
|‘ Gfff7 = SO
Uf) | ea
Y/ sa AG eee
Ly A eee
CAMS ell
1 Test T = 25°CJ
0.1 1 10
V , Drain-to-Source Voltage (V)DS
I , Drain-to-Source Current (A)D
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100 vess—f
TOP 15V
10V
7.0V 5.5V eeee
4.5V
4.0V eee
3.5V
BOTTOM 3.0V
10
3.0V
| {yr 4 —-
— _—f fff a on
| fF 7A
|\#fffp$fy
Y ppm ee
V Js
7 |aa T = 150°CJ
1
0.1 1 10
V , Drain-to-Source Voltage (V)DS
D
I , Drain-to-Source Current (A)
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100 esa ee ee eee 100 eeeeeee
ee es ee pa
pt ee es P| | | [ | fT 7 [ | T 7 |
T = 25°CJ
T = 150°CJ
ee pf T = 150°CJ ff
10 ao 10 | b ger
T = 25°CJ
.—=—— | | | |llUhLet LU AA
es ee ne Ae A
ee ee es YT | | Y{f fT | [ | fT 7
ee ee ee ee | | [Tf [fi | tt
ee ee eee eee | fy ft ft
V = 10VDS
1 | | suseuse wor A 1 PA| A
3.0 3.5 4.0 4.5 5.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Gate-to-Source Voltage (V)GS V , Source-to-Drain Voltage (V)SD
I , Reverse Drain Current (A)SD
D
I , Drain-to-Source Current (A)
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2.0 0.040
ID = 5.8A
C o] = F777
0.036
ELT} gL
1.5
Pree] & fe
0.032
1.0 CPP beer b e s) © ea
et e
TTT} 2 0.028 Ee
TULLE) BE
0.5
0.024
ETE) &— P toe
0.0 EC E VGS= 10V | e@ 0.020 « | ep[ [fy
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction TemperatureJ ( C)° 0 10 20 30 40 [A]
I , Drain Current (A)D
Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature Current
0.12 200
> PC T LLILLLL_LL Gana TOP 1.8A
3.2A
gs 0.10 ft fo fo 160 BOTTOM 4.0A
see 0.08 ffPOLtftoT eee ena
ee ee ee ee 120 AF
s 0.06 | ee fyee
s [WPL tT | GENES eee
80
ee 0.04 SL _ NEV
= ee A SNOW
— ~T)INT LS 40 P NNR
5 0.02 ~ |. oeee SALA
esee 0.00 eda an 0 PP PT tLASAKON SS A
0 3 6 9 12 15 [A] 25 50 75 100 125 150
V , Gate-to-Source Voltage (V)GS Starting T , Junction Temperature (°C)J
Ω
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
Ω
AS
E , Single Pulse Avalanche Energy (mJ)
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1200 20
V = 0V, f = 1MHzGS ID = 5.8A
C = C + C , C SHORTEDC = Ciss gs gd dsrss gd VDS = 15V
C = C + Coss ds gd 16
900 INEN ptee ee {|e|
s
CN S TOE
12
\OK ss
600
Pt PU PS| LUI TEaee
8
NN pit iyi tt
Poh FEE
300 ss
4
P S T) “EERE
0 a7Sel A 0 oeA |
1 10 100 0 10 20 30 40
V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G
Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
100
0.50
Seppeeestieee esata Setafl
a a a em
0.20
10
0.10
0.05
See EET nee eee en
0.02 Se eles PDM
1
e 0.01 reTIN | t1
t2
Sessa al Notes:
SINGLE PULSE
(THERMAL RESPONSE) 1. Duty factor D = t / t1 2
a ili et LUI00 PUTT| 2. Peak TJ = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)1
C, Capacitance (pF)
GS
V , Gate-to-Source Voltage (V)
thJA
(Z )
Thermal Response
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## SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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INCHES MILLIMETERS
DIM
D B MIN MAX MIN MAX
A = 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
r E e) 6 ar e 0.25 [.010] H A Soe SE===== DE .189.1497 .1968.1574 4.803.80 5.004.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X q e d b SST L .016 .050 0.40 1.27
EF y 0° 8° 0° 8°
e1 K x 45°
A
C
y
0.10 [.004]
Toygi 8X b A1 o f — 8X L 4 8X c 4
0.25 [.010] C A B 7
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]
2. CONTROLLING DIMENSION: MILLIMETER aie
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
: | OOG0
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050] ne 8X 1.78 [.070]
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## SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~
DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE
PART NUMBER
## SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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TERMINAL NUMBER 1
oO666) fF
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 ) ed FEED DIRECTION a
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NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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330.00
(12.992)
MAX.
SY
14.40 ( .566 )
12.40 ( .488 )
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NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
- [View this product on Novapart](https://novapart.co/products/IRF7313TRPBFXTMA1/dual-mosfet-n-channel-30-v-65-a-0029-ohm)
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- [Supplier page](https://es.farnell.com/infineon/irf7313trpbfxtma1/dual-mosfet-n-ch-30v-6-5a-so-8/dp/4236345RL)
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