# Dual MOSFET, P Channel, 30 V, 30 V, 3.6 A, 3.6 A, 0.1 ohm

![Product image](https://novapart.co/image/farnell:4318891/)

**URL**: https://novapart.co/products/IRF7306TRPBF/dual-mosfet-p-channel-30-v-36-a-01-ohm
**SKU**: IRF7306TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2770
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 3.6A |
| Continuous Drain Current Id P Channel | 3.6A |
| Drain Source On State Resistance N Channel | 0.1ohm |
| Drain Source On State Resistance P Channel | 0.1ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318891/)

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∆ ∆<br>Rps(on) Static Drain-to-Source On-Resistance |= | — [0.101 Ω Ves = -10V, Ip = -1.8A @<br>_—|—|016| Ves = -4.5V, Ip = -1.5A ©<br>Gate Threshold Voltage | -1.0|-—|-—]| v_ | Vps = Vos, Ip = -250HA<br>Forward Transconductance |25|-——|-——| s | Vos = -24V, Ip = -1.8A<br>loss Drain-to-Source Leakage Current | — | — | -1.0| HA Vos = -24V, Ves = OV<br>| --- | --- | -25 | Vos = -24V, Ves = OV, Ty = 125°C<br>nA<br>less Gate-to-Source Forward Leakage | -—- | — |-100| Ves = -20V<br>[Qg___| Gate-to-Source Reverse Leakage | —- | — | 100 | Ves = 20V<br>lQgs Total Gate Charge _—|—| 25 | | lp = -1.8A<br>Qua | : Ga tte-te- to- DrainSource("MilleCha r ")geCharge | - —- - | — - || 299.0 | nC |  V po s = - 10V,24V See Fig. 6 and 12 ®<br>ff<br>ft Turn-OnRiseTimeDelay Time —| 11 |—|] Vop = -15V<br>Turn-Off Delay Time =|7 [|] | to = 1.88 Ω<br>Ω,<br>Fall Time |---|2518 [=|— | ™ | R p=8.2o=60 See Fig. 10<br>D<br>Lp Internal Drain Inductance — , 40 ;— .<br>nH | Between lead tip G<br>Ls Internal Source Inductance — 60 ;— | and center of die contact<br>S<br>input Capacitance [0<br>Output —] _ | Ves= ov<br>Ciss ReverseCapacitanceTransfer Capacitance [==—— [200| 93  [=]|-—— pF | f Vos = 1.0MHz, = -25v See Fig. 5<br>Source-Drain Ratings and Characteristics<br>Parameter Min. | Typ. |Max.| Units Conditions<br>Is Continuous Source Current 25 MOSFET symbol D<br>(Body Diode) A | showing the<br>G<br>I SM Pulsed Source Current | integral reverse<br>(Body Diode) © —|—| 4 p-n junction diode. S<br>**----- End of picture text -----**<br>


≤ ≤ 

> ISD ≤ -1.8A, di/dt ≤ 90A/us, Vop ≤ Verypss; @® Surface mounted on FR-4 board, t ≤ ≤ 

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100<br> TOP          - 15V St<br>                  - 10V<br>                  - 8.0V<br>                  - 7.0V<br>                  - 6.0V<br>                  - 5.5V 7<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>ay Ze<br>GRaI R<br>10  -4.5V<br>ee ////, a<br>ae) /A ee |<br>| Aff |<br>Up |\| |<br>1 Dvr  T   = 25°CJ<br>0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 eS |<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V<br>                  - 7.0V<br>                  - 6.0V<br>                  - 5.5V |Pee<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>bf<br>| oeaul HI<br>10<br> -4.5V<br>G Y<br>Rey)i<br>ey) Aaee eeell)<br>ay Ae eel<br> 20µs PULSE WIDTH<br> T   = 150°CJ<br>1<br>0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100 apfee oe oe 2.0 P fl =-3.0Al EE<br>ee<br>T  = 25°CJ<br>FERS EES 1.5 PLE EEE<br>P| tT ye T  = 150°CJ ><br>P| heer al<br>10 DY ZAGER 1.0<br>ER ee tnt)<br>Pat<br>—_———======—Aee [re][ ee] ee ee ee eee eee bet| LE<br>PEE EEE EEE 0.5 FLEE<br>PoP [tt] EE  EEE<br>pif itt yy EEE<br> V     = -15VDS<br>1 LF | ene use mor A 0.0 GORERAGE RD ROBEESSERA<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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1000 20<br>V      = 0V,         f = 1MHzGS I    = -3.0AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds V     = -24VDS<br>C      = C<br>rss         gd<br>800 eea C      = C     + Coss        ds         gd | 16 eee| ot [ft]<br>er | PL ft<br>600 s 12<br>PSoneNene i PL LAE<br>ss<br>400 8<br>| | Pe HP ee a<br>NONE pf<br>200 s 4<br>pg eh ee AA ae<br> FOR TEST CIRCUIT<br>a SSll aeAnan     SEE FIGURE 12<br>0 A 0<br>1 10 100 0 5 10 15 20 25<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 == = eee  100 = nan<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>——— =,<br>10 pf fp S e e<br>|__| iy A<br>T  = 150°CJ 100us<br> 10<br>PVT a 4 A h Perettiee ee eets ll<br>ee [en] 7 T  = 25°C if J | | | | ee ~~ ~<br>1<br>tf ee ee 1ms e e<br>Pr al<br>———— Es e<br>eeee eee  T TCJ = 25  C= 150  C° °<br>10ms<br>0.10.0 CO 0.3 0.6 0.9 E 1.2 1.5A  1  1 Single Pulse ill  10 ll  100<br>-V     , Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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4.0 CE TET ETT Ye<br>PARE “es (your<br>3.0<br>-<br>+<br>Pt SONEE Re | Voo<br>2.0 PE ENE LE 310  1<br>uty Factor  0.1 %<br>PE ye ELEN oo<br>1.0 PTT TT Ty IN | Fig 10a. Switching Time Test Circuit<br>VDS<br>OCC N 90% —<br>0.0<br>25 50 75 100 125 150<br>°<br>PE LET T   , Case TemperatureC EL T ] (  C)  | X \/<br>10% /\_\<br>Fig 9. Maximum Drain Current Vs. VGS t eee| d(on) tr \ td(off) om tf<br>Ambient Temperature<br>Fig 10b. Switching Time Waveforms<br> 100<br>P D = 0.500.20 oor<br> 10 e rr<br>= 0.10 err a<br>0.05<br>e ee<br>0.02<br>PDM<br>0.01<br> 1 = re [c] Do [ee] SINGLE PULSE TCAinhCCHLL i t1<br>el PT (THERMAL RESPONSE) eee ess eekead SS t2<br>T T Notes:<br>Pt [TT] EE 1. Duty factor D = t   / t1 2<br>a | 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF .3µF<br>LI ; | a<br>QGS QGD D.U.T. +-VDS<br>VGS<br>V | G 7 G&S<br>-3mA<br>oral IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>® •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>kK<br>®<br>•   +<br>Re dv/dt controlled by Rg<br>•   -<br>•   D.U.T. - Device Under Test<br>‘ > Ispcontrolled by Duty Factor "D"<br>* Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. nd Period _t<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt fs<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A = 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>=S=== b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>rar E 0 6 eci os 0.25 [.010] H A Pee ee DE .189.1497 .1968.1574 4.803.80 5.004.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X q e d b SST L .016 .050 0.40 1.27<br>ETE y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>peeda 8X b A1 e f= — 8X L * 8X c 4<br>0.25 [.010]  C A B 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER aApee<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>r boon<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] ne 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>oO666) fF<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION a<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 



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- [Supplier page](https://es.farnell.com/infineon/irf7306trpbf/mosfet-p-ch-30v-3-6a-soic/dp/4318891)
---

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