# Power MOSFET, P Channel, 40 V, 6.2 A, 0.041 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2468001RL/)

**URL**: https://novapart.co/products/IRF7241TRPBF/power-mosfet-p-channel-40-v-62-a-0041-ohm-soic
**SKU**: IRF7241TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7730
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-6.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.025o; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.2A |
| Drain Source On State Resistance | 0.041ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468001RL/)

## IRF7241PbF HEXFET . Power MOSFET 

- Trench Technology 

- Ultra Low On-Resistance 

- P-Channel MOSFET 

- Available in Tape & Reel 

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a VDSS a) RDS(on) max (m ID<br>-40V 41@VGS = -10V -6.2A<br>| 70@VGS +  = -4.5V -5.0A<br>**----- End of picture text -----**<br>


- Lead-Free 

## **Description** 

New trench HEXFET[®] Power MOSFETs  from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the ruggedized  device  design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. 

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


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es Parameter Max. Units<br>nn VDS Drain- Source Voltage -40 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -6.2<br>es Q<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -4.9 A<br>e IDM s Pulsed Drain Current  ©e -25 ie<br>OO PD @TA = 25°C Power Dissipation  2.5<br>RG PD @TA = 70°C Power Dissipation  1.6<br>Linear Derating Factor 20 mW/°C<br>Re ©<br>VGS Gate-to-Source Voltage  ± 20 V<br>Re<br>TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C<br>Rs<br>**----- End of picture text -----**<br>


## **Thermal Resistance** 

**Symbol Parameter Typ. Max. Units** ~~esnD~~ RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W ~~Ca~~ www.irf.com 1 

10/6/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|re<br>~~es~~<br>~~es~~|**Parameter**<br>re<br><br>|**Min.**<br>re<br><br>~~**Gs**~~<br>|**Typ. **<br>re<br><br>~~**Gs**~~<br>|**Max. **<br>re<br>~~Qs~~<br><br>~~**Gs**~~|**Units**<br>re<br>~~Gs~~<br><br>~~**Gs**~~|**Conditions**<br>re<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>|-40<br>~~es~~<br>~~**Gs**~~<br>|–––<br>~~es~~<br>~~**Gs**~~<br>|–––<br>~~Qs~~<br>~~es~~<br>~~**Gs**~~|V<br>~~Gs~~<br>~~es~~<br>~~**Gs**~~|VGS= 0V, ID= -250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ<br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br><br>~~e~~|–––<br><br>~~**Gs**~~<br>~~e~~|0.03<br><br>~~**Gs**~~<br>~~e~~|–––<br>~~Qs~~<br><br>~~**Gs**~~|V/°C<br>~~Gs~~<br><br>~~**Gs**~~|Reference to 25°C, ID= -1mA<br>|
|RDS(on)<br>~~es~~<br>~~|~~<br>~~a~~|Static Drain-to-Source On-Resistance<br><br>~~|~~<br>**|**<br>~~eG~~|–––<br>~~**Gs**~~<br><br>~~|~~<br>**|**|25<br>~~**Gs**~~<br><br>~~|~~|41<br>~~**Gs**~~<br>~~|~~|mΩ<br>~~**Gs**~~<br>~~|~~<br>~~GOOG~~|VGS= -10V, ID= -6.2A<br>~~|~~|
|||–––<br>~~|~~<br>**|**<br>~~eG~~|45<br>~~|~~<br>|70<br>~~|~~<br>~~GOOG~~||VGS= -4.5V, ID= -5.0A<br>~~|~~<br>~~GOOG~~|
|VGS(th)<br>~~a~~<br>~~es~~|Gate Threshold Voltage<br>**|**<br>~~eG~~<br>~~e~~|-1.0<br>**|**<br>~~eG~~<br>~~e~~<br>~~G~~|–––<br><br>~~e~~~~**s**~~<br>~~G~~|-3.0<br>~~GOOG~~<br>~~**s**~~<br>~~G~~|V<br>~~GOOG~~<br>~~**s**~~|VDS= VGS, ID= -250µA<br>~~GOOG~~<br>~~**s**~~|
|gfs<br>~~a ~~<br>~~es~~|Forward Transconductance<br> ~~eG~~<br>~~e~~|8.9<br>~~eG ~~<br>~~e~~<br>~~G~~|–––<br> <br>~~e~~~~**s**~~<br>~~G~~|–––<br> ~~GOOG~~<br>~~**s**~~<br>~~G~~|S<br>~~GOOG~~<br>~~**s**~~|VDS= -10V, ID= -6.2A<br>~~GOOG~~<br>~~**s**~~|
|IDSS<br>~~es~~<br>~~ee~~|Drain-to-Source Leakage Current<br>~~e~~<br>~~ee~~|–––<br>~~e~~<br>~~G~~<br>~~ee~~|–––<br>~~e~~~~**s**~~<br>~~G~~<br>~~ee~~|-10<br>~~**s**~~<br>~~G~~<br>~~ee~~|~~**s**~~<br>~~ee~~|VDS= -32V, VGS= 0V<br>~~**s**~~<br>~~ee~~|
|||–––<br>~~ee~~|–––<br>~~ee~~|-25<br>~~ee~~||VDS= -32V, VGS= 0V, TJ= 70°C<br>~~ee~~|
|~~fess~~|Gate-to-Source Forward Leakage<br>~~fess~~|–––<br>~~fess~~|–––<br>~~fess~~|-100<br>~~fess~~|~~fess~~|VGS= -20V<br>~~fess~~|
||Gate-to-Source Reverse Leakage<br>~~fess~~<br>~~ee~~|–––<br>~~fess~~<br>~~ee~~|–––<br>~~fess~~<br>~~ee~~|100<br>~~fess~~||VGS= 20V<br>~~fess~~|
|Qg<br>~~2~~<br>es|Total Gate Charge<br>~~——~~|–––<br>~~——~~|53<br>~~——~~|80<br>~~——~~|nC|ID= -6.2A<br>VDS= -32V<br>VGS= -10V<br>@|
|Qgs<br>~~2~~<br>es<br>~~ee~~|Gate-to-Source Charge<br>~~——~~|–––<br>~~——~~|14<br>~~——~~|21<br>~~——~~|||
|Qgd<br>es<br>~~ee~~<br>~~a~~|Gate-to-Drain("Miller")Charge|–––|3.9|5.9|||
|td(on)<br>~~ee~~<br>~~a~~<br>es|Turn-On Delay Time|–––|24|–––||VDD= -20V<br>ID= -1.0A<br>RG= 6.0Ω<br>VGS= -10V<br>@|
|tr<br>~~a~~<br>es<br>ee|Rise Time<br>~~ee~~|–––<br>~~ee~~|280<br>~~ee~~|–––|||
|td(off)<br>es<br>ee<br>~~es~~|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~|210<br>~~ee~~|–––|||
|tf<br>ee<br>~~es~~<br>~~ee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|100<br>~~ee~~|–––|||
|Ciss<br>~~es~~<br>~~ee~~<br>es|Input Capacitance|–––|3220|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0kHz|
|Coss<br>~~ee~~<br>es<br>ee|Output Capacitance|–––|160|–––|||
|Crss<br>es<br>ee|Reverse Transfer Capacitance|–––|190|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~a~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ss~~|**Typ. **<br>~~ss~~|**Max.**<br>~~ss~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~a~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~|~~ss~~|~~ss~~|2.5<br>~~ss~~||MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G|
|ISM|Pulsed Source Current<br>(BodyDiode)|||25|||
|VSD<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~eeeG~~|-1.2<br>~~eG~~|V<br>~~eG~~<br>es|TJ= 25°C, IS= -2.5A, VGS= 0V<br>~~ee~~|
|trr<br>~~ee~~<br>~~a~~|Reverse Recovery Time<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>ee|32<br>~~ee~~<br>ee|48<br>~~ee~~|ns<br>~~ee~~<br>es|TJ= 25°C, IF= -2.5A<br>di/dt = -100A/µs<br>~~ee~~<br>~~ee~~<br>®|
|Qrr<br>~~ee~~<br>~~a~~|Reverse Recovery Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>ee|45<br>~~ee~~<br>ee|68<br>~~ee~~|nC<br>~~ee~~<br>es||



® Repetitive rating;  pulse width limited by max. junction temperature. 

Surface mounted on 1 in square Cu board 

Pulse width ≤ 400µs; duty cycle ≤ 

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 1000  100<br>VGS VGS<br>TOP -15V TOP -15V<br>-10V -10V<br>-4.5V a a ee ee -4.5V a<br>-3.7V -3.7V<br> 100 -3.5V-3.3V | -3.5V-3.3V aC<br>-3.0V -3.0V<br>BOTTOM -2.7V BOTTOM -2.7V<br>st HH  10 e e!)| |<br> 10<br>a el ' ACA — oo<br>ao y LA<br>2275 Sasnemeatni Aygo<br> 1<br> 1<br>-2.70V<br>0.1 eae am airiimmmaiii S22 Semieetit<br>oe aaa a -2.70V eet 7A 0 |<br>| 20µs PULSE WIDTHT  = 25J °C 20µs PULSE WIDTHT  = 150J °C<br>0.01 e tt 0.1 AA [LAUT] |<br>0.1  1  10  100 0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>2.0<br>100.00 ID = -6.2A<br>S F Po E EEE<br>10.00 es— TJ  ———— = 150°C esss 1.5 PEELE<br>ft ee’ || ELE attEE<br>i ee ee Pu aa<br>1.00 L| ASZi7_ || |tt| | 1.0 lla LAT<br>S S pee<br>ee 2 a ee LTT |<br>TJ = 25°C<br>0.10 F FF ff 0.5 TOLLE<br>p f ELLE EEE.<br>OO OO ee| | ||<br>— _—— VDS = -25V ee PEELE<br>0.01 pp 20µs PULSE WIDTH | 0.0 PEELE EE VGS = -10V<br>2.5 pi 3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 EEE 60 80 100 EEE 120 140 160<br>-VGS, Gate-to-Source Voltage (V) T  , Junction TemperatureJ (  C)°<br>D D<br>-I   ,  Drain-to-Source Current (A) -I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)<br>(Α<br>-ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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5000<br>VGS   = 0V,       f = 1 MHZ<br>T T Ciss    = Cgs + Cgd,   Cds    SHORTED<br>4000 Crss    = Cgd<br>C  = C + C<br>a Ciss ml oss   ds  gd<br>ey<br>3000<br>a<br>a ll<br>2000<br>S oto<br>1000 a eee<br>Coss<br>|<br>a Crss |<br>0<br>1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>pe<br> 10<br>T  = 150  CJ °<br>2<br>ny 28<br> 1 S AenAoe<br>T  = 25  CJ °<br>eepfee eefpee ee ee ee eee<br>V      = 0 V GS<br>0.1 Ffee)| gf | |<br>0.4 0.6 0.8 1.0 1.2<br>-V     ,Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
20<br>ID = -6.2A<br>P EETTL TL<br>VDS =-32V<br>16 VDS =-20V<br>See ee esee0<br>coo Pen<br>12<br>pi ttt | | yy<br>Pt tT | | LA Te<br>8<br>ete“<br>PTY7 |<br>4<br>| i tt tf<br>iA] TEL TT EL<br>0 Yi | i {it ttt<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>seat eo Pee tl |<br>10<br>100µsec<br>1msec<br>g c eal<br>1 CASAS T ET<br>p Tc = 25°C ae pp 10msec<br>Tj = 150°C a a |<br>Single Pulse<br>0.1 pbUUM LLRHIbp TTI<br>0 1 10 100 1000<br>-VDS  , Drain-toSource Voltage (V)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
8.0<br>Vos ,<br>ERR Rp<br>6.0 Gifeeeeeee> R Yes (7) ous.<br>-<br>+<br>PRL com<br>4.0 PAL~] Ves ≤ 1<br>≤ 0.1 %<br>Saneee Wan oan<br>Ng<br>2.0 Fig 10a.   Switching Time Test Circuit<br>td(on) tr td(off) tf<br>VGS<br>0.0 PEE EE EE 10% Ty<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>90%<br>Fig 9.   Maximum Drain Current Vs. VDS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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Fig 10b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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 100<br>ace |<br>D = 0.50<br>P e tit ot<br>ee re ai ean<br> 10 0.20<br>0.10<br>0.05<br>h r ct<br>SSH HH PDM<br>0.02<br> 1 e e a<br>= 0.01 SS Se t1<br>a a t2<br>D>. SINGLE PULSE a Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t1 2<br>en LT PU PNene 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.100.08 L EE EEy 0.08 F EE<br>0.06<br>0.06 ( err) F VGS = -4.5V R<br>0.04 o e<br>0.04 R ID  e = -6.2A 2a e7e<br>VGS = -10V<br>0.02 PN oR] 0.02 pea<br>2 6 10 14 18 0 5 10 15 20 25<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current (A)<br>Fig 12.    Typical On-Resistance Vs. Fig 13.    Typical On-Resistance Vs.<br>Gate Voltage Drain Current<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>.3µF<br>QGS QGD D.U.T. +-VDS<br>i , Te VGS |<br>VG<br>-3mA<br>a |<br>IG ID<br>Charge Current Sampling Resistors<br>)<br>Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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**----- Start of picture text -----**<br>
3.0<br>100<br>80<br>C A) se A<br>2.5 O NE i ii<br>ID = -250µA<br>60<br>TTP N O) MICS Tn<br>N BH 000 AN<br>2.0 P S TOP7)Y)NG EE 40 G ENIESTIIETIES<br>N 20 C EUIN<br>Sy PN C e ScornIE EINECATE CHIE<br>1.5 UE FTAeC<br>0<br>-75 -50 -25 0 25 50 75 100 125 150<br>0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C )<br>Time (sec)<br>-VGS(th) Gate threshold Voltage (V)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th)  Vs. Junction Temperature 

**Fig 16.** Typical Power Vs. Time 

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## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

**==> picture [293 x 270] intentionally omitted <==**

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>jarecios 6 H EEE D .189 .1968 4.80 5.00<br>E 0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>— ===<br>e1 .025  BASIC 0.635  BASIC<br>ra === H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oe oo L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>8X b A1 8X L 8X c<br>0.25 [.010]  C A B 0 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER ape<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>: 6.46 [.255] ) O00<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>S)      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. Li id<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] toe 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR XXXX WW =  WEEK INTERNATIONAL F7101 A =  ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO ~~ee~~ 

PART NUMBER 

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## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

**==> picture [174 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>oo 6 © a)<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) ed FEED DIRECTION a<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [154 x 68] intentionally omitted <==**

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 330.00<br>(12.992)<br>  MAX.<br>SY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 

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