# P CHANNEL MOSFET, -40V, 10.5A, SOIC

![Product image](https://novapart.co/image/farnell:2128593/)

**URL**: https://novapart.co/products/IRF7240PBF/p-channel-mosfet-40v-105a-soic
**SKU**: IRF7240PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5440
**Stock**: 10+

## Description

Tra; P CHANNEL MOSFET, -40V, 10.5A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-10.5A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):15mohm; Rds(on) Test

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2014) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10.5A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2128593/)

## P- 96253 IRF7240PbF HEXFET ® Power MOSFET 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free 

|**VDSS**<br>**-40V**|**RDS(on) max**|**ID**<br>-10.5A<br>-8.4A|
|---|---|---|
||**DS(on)**<br>0.015@VGS= -10V||
||0.025@VGS= -4.5V||



## **Description** 

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. 

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.  With these improvements, multiple devices can be used in an application with dramatically reduced board space.  The package is designed for vapor phase, infrared, or wave soldering technique 

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A<br>S 1 8 D<br>S 2 7 D<br>S 3 6 D<br>G 4 5 D<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>


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Parameter Max. Units<br>eeeG<br>Rs VDS Drain- Source Voltage -40 V<br>ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10.5<br>Re<br>ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -8.6 A<br>ee© IDM Pulsed Drain Current  -43<br>PD @TA = 25°C Power Dissipation   2.5<br>SSRe PD @TA = 70°C KO Power Dissipation re 1.6<br>Linear Derating Factor 20 mW/°C<br>Re<br>VGS Gate-to-Source Voltage  ± 20 V<br>Re<br>TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C<br>a<br>**----- End of picture text -----**<br>


## **Thermal Resistance** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|RθJA|Maximum Junction-to-Ambient|50|°C/W|
|www.irf.com|||1|



1 06/06/05 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~rs~~<br>~~Rs~~|**Parameter**<br>~~QO~~<br>~~Gs~~|**Min.**<br>~~QO~~<br>~~Gs~~|**Typ. **<br>~~QO~~<br>~~Gs~~|**Max. **<br>~~QO~~<br>~~Gs~~|**Units**<br>~~QO~~<br>~~GQ~~|**Conditions**<br>~~QO~~<br>~~GQ~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~rs~~<br>~~Rs~~<br>~~Rs~~|Drain-to-Source Breakdown Voltage<br>~~QO~~<br>~~Gs~~<br>~~Qs~~|-40<br>~~QO~~<br>~~Gs~~<br>~~Qs~~|–––<br>~~QO~~<br>~~Gs~~<br>~~Qs~~|–––<br>~~QO~~<br>~~Gs~~<br>~~Qs~~|V<br>~~QO~~<br>~~GQ~~<br>~~Qs~~|VGS= 0V, ID= -250µA<br>~~QO~~<br>~~GQ~~<br>~~Qs~~|
|∆V(BR)DSS/∆TJ<br>~~Rs~~<br>~~Rs~~<br>|Breakdown Voltage Temp. Coefficient<br>~~Gs~~<br>~~Qs~~<br><br>||––– <br>~~Gs~~<br>~~Qs~~<br><br>||-0.025 <br>~~Gs~~<br>~~Qs~~<br>|–––<br>~~Gs~~<br>~~Qs~~<br>|V/°C<br>~~GQ~~<br>~~Qs~~<br>|Reference to 25°C, ID= -1mA<br>~~GQ~~<br>~~Qs~~<br>~~—~~|
|RDS(on)<br>~~Rs~~<br>~~ep~~<br>~~es~~<br>~~Rs~~|Static Drain-to-Source On-Resistance<br>~~Qs~~<br>~~ep~~<br>|<br>~~rs~~<br>|–––<br>~~Qs~~<br>~~ep~~<br>|~~|~~|––– <br>~~Qs~~<br>~~ep~~|0.015<br>~~Qs~~<br>~~ep~~|Ω<br>~~Qs~~<br>~~ep~~<br>|VGS= -10V, ID= -10.5A<br>~~Qs~~<br>~~ep—~~|
|||–––<br>~~ep~~<br>|~~|~~<br>~~Gs~~<br>|––– <br>~~ep~~<br>~~Gs~~<br>|0.025<br>~~ep~~<br>||VGS= -4.5V, ID= -8.4A<br>~~ep—~~<br>|
|VGS(th)<br><br>~~es~~<br>~~Rs~~|Gate Threshold Voltage<br><br>|<br>~~rs~~<br>|-1.0<br><br>| ~~|~~<br>~~Gs~~<br>|–––<br><br>~~Gs~~<br>|-3.0<br><br>|V<br><br>|VDS= VGS, ID= -250µA<br>~~—~~<br>|
|gfs<br>~~es~~<br>~~Rs~~|Forward Transconductance<br><br>~~rs~~<br>~~Qs~~|17<br> ~~|~~<br>~~Gs~~<br>~~Qs~~|–––<br>~~Gs~~<br>~~Qs~~|–––<br>~~Qs~~|S<br>~~Qs~~|VDS= -10V, ID= -10.5A<br>~~Qs~~<br>~~|~~|
|IDSS<br>~~Rs~~<br>~~8~~|Drain-to-Source Leakage Current<br>~~rs~~<br><br>~~8~~|–––<br>~~Gs~~<br><br>~~8~~|–––<br>~~Gs~~<br><br>~~8~~|-15<br><br>~~8~~|~~8~~<br>~~8~~|VDS= -32V, VGS= 0V<br><br>~~8~~<br>~~|~~|
|||–––<br>~~8~~|–––<br>~~8~~|-25<br>~~8~~<br>~~8~~||VDS= -32V, VGS= 0V, TJ= 70°C<br>~~8~~<br>~~|~~|
|~~eso~~|Gate-to-Source Forward Leakage<br>~~eso~~|–––<br>~~eso~~|–––<br>~~eso~~|-100<br>~~eso~~<br>~~8~~|~~eso~~<br>~~8~~|VGS= -20V<br>~~|~~<br>~~eso~~|
||Gate-to-Source Reverse Leakage<br>~~eso~~|–––<br>~~eso~~|–––<br>~~eso~~|100<br>~~eso~~<br>~~8~~||VGS= 20V<br>~~eso~~|
|Qg<br>~~**e**~~<br>s|Total Gate Charge<br>~~**e**t~~|–––<br>~~t~~|73<br>~~t~~|110<br>~~8~~<br>~~t~~|nC<br>~~8~~|ID= -10.5A<br>VDS= -20V<br>VGS= -10V<br>@|
|Qgs<br>~~**e**~~<br>s<br>~~re~~|Gate-to-Source Charge<br>~~**e**t~~<br>~~ee~~|–––<br>~~t~~<br>~~ee~~|31<br>~~t~~<br>~~ee~~|47<br>~~t~~<br>~~ee~~|||
|Qgd<br>s<br>~~re~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~|17<br>~~ee~~|26<br>~~ee~~|||
|td(on)<br>~~re~~<br>~~ee~~<br>ee|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~|52<br>~~ee~~|–––<br>~~ee~~||VDD= -20V<br>ID= -1.0A<br>RG= 6.0Ω<br>VGS= -10V<br>@|
|tr<br>~~ee~~<br>ee<br>es|Rise Time|–––|490|–––|||
|td(off)<br>ee<br>es<br>~~re~~|Turn-Off Delay Time|–––|210|–––|||
|tf<br>es<br>~~re~~<br>~~es~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|97<br>~~ee~~|–––|||
|Ciss<br>~~re~~<br>~~es~~<br>re|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|9250<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0kHz|
|Coss<br>~~es~~<br>re<br>ee|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|580<br>~~ee~~|–––|||
|Crss<br>re<br>ee|Reverse Transfer Capacitance|–––|520|–––|||



## **Source-Drain Ratings and Characteristics** 

|a|**Parameter**<br>es|**Min.**<br>es<br>~~ss~~|**Typ. **<br>es<br>~~ss~~|**Max.**<br>es|**Units**<br>es|**Conditions**<br>es|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|~~ss~~|~~ss~~|2.5|~~oe~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~oe~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~rs~~|~~oe~~|~~oe~~|43<br>~~oe~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~rs~~|–––<br>~~oe~~|–––<br>~~oe~~|-1.2<br>~~oe~~|V<br>~~oe~~|TJ= 25°C, IS= -2.5A, VGS= 0V<br>~~oe~~|
|trr<br>~~a~~<br>~~el~~<br>~~a~~|Reverse Recovery Time<br>~~rs~~<br>~~el~~<br>~~ee~~|–––<br>~~oe~~<br>~~el~~<br>~~ee~~|43<br>~~oe~~<br>~~el~~<br>ee|65<br>~~oe~~<br>~~el~~|ns<br>~~oe~~<br>~~el~~|TJ= 25°C, IF= -2.5A<br>di/dt = -100A/µs<br>~~oe~~<br>~~el~~<br>@|
|Qrr<br>~~el~~<br>~~a~~|Reverse Recovery Charge<br>~~el~~<br>~~ee~~|–––<br>~~el~~<br>~~ee~~|75<br>~~el~~<br>ee|110<br>~~el~~|nC<br>~~el~~||



® Repetitive rating;  pulse width limited by max. junction temperature. 

Surface mounted on 1 in square Cu board,  t ≤ 

Pulse width ≤ 400µs; duty cycle ≤ 

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 1000<br>VGS<br>TOP -15V<br>-10V<br>-4.5V<br>-3.7V<br> 100 -3.5V<br>-3.3V Se eS EH:<br>-3.0V<br>BOTTOM -2.7V<br>og ttS|<br> 10 |<br>SEES a SS SS ee<br>iA] | tty TTT<br> 1 |<br>AT<br>0.1<br>-2.70V<br>ee 20µs PULSE WIDTH<br>ee T  = 25J °C<br>0.01<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 100<br>popSe ——————————<br>T  = 150  CJ °<br>e A<br> 10<br> 1 aHat T  = 25  CJ °<br>|<br>PY<br>0.1<br>_ oY {| | {| | {| ||<br>V      = -25VDS<br>0.01 |ee| | ft 20µs PULSE WIDTH<br>2.5 3.0 3.5 4.0 4.5<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 1000<br>VGS<br>TOP -15V<br>-10V<br>-4.5V<br>-3.7V<br>-3.5V<br> 100 -3.3V-3.0V enll<br>BOTTOM -2.7V<br>ee a att el TT<br>207 |<br> 10 inl11 =<br>SSFp-SSSSSSanitSESE= = SSS — —Tal —<br>-2.70V<br> 1 Lott _| |<br>0.1 nn| TE 20µs PULSE WIDTHT  = 150J °C<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = -10.5A<br>PELE EEL<br>PEELE EEE<br>1.5<br>1.0 PEELEeee TEL<br>“bee Let T<br>PEELE EEE<br>0.5<br>0.0 PLLEELLEEEEE VGS = -10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>D<br>-I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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16000 20<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ ID = -10.5A<br>Ciss    = Cgs + Cgd,   Cds    SHORTEDiss    = Cgs + Cgd,   Cds    SHORTED   = Cgs + Cgd,   Cds    SHORTEDgs + Cgd,   Cds    SHORTED+ Cgd,   Cds    SHORTEDgd,   Cds    SHORTED,   Cds    SHORTEDds    SHORTED   SHORTED VDS =-32V<br>aaa Crss    = Cgd rss    = Cgd   = Cgd gd  16 Sete VDS =-20V EEE<br>12000 Coss   = Cds + Cgdoss   = Cds + Cgd = Cds + Cgdds + Cgd+ Cgdgd VDS =-8V<br>a l CECT Pe<br>Ciss<br>—!__ | | 12 LV /<br>8000 - UTTTT| IIITTT| IIITT| III| III III PEEf v ae<br>8<br>a | SERRE 7/88<br>4000 e e See Zee<br>4<br>Oe SESE, 76nn8<br>Coss<br>a apeeteeen<br>Crss<br>0 PSS 0 Pret<br>1 10 100 0 20 40 60 80 100<br>-VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>a ee ee ee eee eee a ee |<br>T  = 150  CJ ° 100us<br> 10<br>anv a1 lt [ 0<br> avaun  10 Se 1ms<br>T  = 25  CJ °<br> 1<br>Foe) P  TA = 25  C° E E 10ms<br> TJ = 150  C°<br>0.1 Ai V      = 0 V GS  1 S  Single Pulse o TLCiLT<br>0.4 0.6 0.8 1.0 1.2 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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16000<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTEDiss    = Cgs + Cgd,   Cds    SHORTED   = Cgs + Cgd,   Cds    SHORTEDgs + Cgd,   Cds    SHORTED+ Cgd,   Cds    SHORTEDgd,   Cds    SHORTED,   Cds    SHORTEDds    SHORTED   SHORTED<br>aaa Crss    = Cgd rss    = Cgd   = Cgd gd<br>12000 Coss   = Cds + Cgdoss   = Cds + Cgd = Cds + Cgdds + Cgd+ Cgdgd<br>a l<br>Ciss —!__ | |<br>8000 - UTTTT| IIITTT| IIITT| III| III III<br>a |<br>4000 e e<br>Oe<br>Coss<br>a<br>Crss<br>0 PSS<br>1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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12 P| tT | Tt TT Vos Ro<br>10 Oe 7<br>nN : D.UT.<br>8 +-<br>PEEPS EEE fe |. 7<br>aN<br>6 a )BMos ≤ 1<br>≤ 0.1 %<br>aN Puseceace BS<br>aaa eeNe :<br>4 Pt tT | tT dT | TE TN Fig 10a.   Switching Time Test Circuit<br>2 Pt tT EE ET<br>td(on) tr td(off) tf<br>P| tT | | tT | Tt VGS a a<br>0 10%<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>|<br>90%<br>Fig 9.   Maximum Drain Current Vs. VDS<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>Se—et eeAce— |<br> 10 0.20<br>0.10<br>0.05<br>ST Seereee e r TTTA aTT<br> 1 0.02<br>0.01<br>e a eee eee ee eee PDM<br>t1<br>0.1 acet) o|tee t2<br>SINGLE PULSE<br>(THERMAL RESPONSE) Notes:<br>a 1. Duty factor D = t   / t1 2<br>ee ee e e eee 2. Peak T J = P DM x  Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.035 T HI 0.025 o p<br>0.030<br>S eo 0.020 e VGS = -4.5V r<br>0.025 P TV| ft ft td. |<br>P A<br>0.020<br>0.015<br>P | KA] ft ftff<br>0.015 ID = -10.5A VGS = -10V<br>pNP<br>0.010 Pp SKE 0.010 | C O<br>0.0 4.0 8.0 12.0 16.0 0 10 20 30 40 50<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current (A)<br>)<br> Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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QG<br>QGS QGD<br>VG ¢ pie<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>ret .3µF<br>D.U.T. +-VDS<br>The VGS |<br>(a<br>-3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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3.0 C ALE 200160 B EV 0010 0)<br>FeNeeeeee E AETISEAE<br>2.5<br>120<br>S OON H E OG<br>aN A<br>ID = -250µA 80<br>2.0 P yPNE T HE EN 00 PELPUL<br>= C HENG<br>B R N 40 ETA FT<br>1.5 Ty TTT TPNIN 0 C OETAEMOE EUTTSU T EINSSUMTTI TT TISU<br>-75 -50 -25 0 25 50 75 100 125 150 0.001 0.010 0.100 1.000 10.000 100.000<br>TJ , Temperature ( °C ) Time (sec)<br>Power (W)<br>-VGS(th) ,  Variace ( V )<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Typical Power Vs. Time<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th) Variance Vs. Juction Temperature 

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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- eee b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>j 6 ae H ee D .189 .1968 ee 4.80 ee 5.00 ee<br>E<br>0.25 [.010]  A ———— E .1497 .1574 3.80 4.00<br>| 1 2 3 4 [|e—ars] a e .050  BASIC 1.27  BASIC<br>1 ee<br>e1 .025  BASIC 0.635  BASIC<br>-——— —}<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oF =< L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>fr [ff ff<br>e1 K x 45°<br>A<br>ae C ia<br>y<br>0.10 [.004]<br>dhe 8X b v A1 om X O 8X L 8X c mi<br>0.25 [.010]  C A B 7<br>fe} J TT]<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>nae<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>toot<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| ii ki<br>0003<br>3X 1.27 [.050] — ke<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~m~~ e 

DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

A =  ASSEMBLY SITE CODE 

LOT CODE 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [193 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>oO — © i<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [172 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/05 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7240PBF/p-channel-mosfet-40v-105a-soic)
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- [Supplier page](https://es.farnell.com/infineon/irf7240pbf/p-channel-mosfet-40v-10-5a-soic/dp/2128593)
---

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