# Power MOSFET, P Channel, 20 V, 5.3 A, 0.06 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2467999/)

**URL**: https://novapart.co/products/IRF7204TRPBF/power-mosfet-p-channel-20-v-53-a-006-ohm-soic
**SKU**: IRF7204TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3580
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.3A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2467999/)

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A<br>S 1 8 D<br>2 7 Voss = -20V<br>S D<br>S 3 6 D Rpgion) = 9.060 Ω<br>G 4 5 D<br>Ip =-5.3A<br>Top View<br>**----- End of picture text -----**<br>


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SO-8<br>**----- End of picture text -----**<br>


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θ<br>Rx | Maximum Junctiono-Ambient  © [| «PW<br>**----- End of picture text -----**<br>


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∆ ∆<br>Ω<br>Rps(on) Static Drain-to-Source On-Resistance |= |-— |o.060 Ves = -10V, Ip = -9.3A ©<br>Gate |——- |— [0.10 | Vas = -4.5V, Ip  = -2.0A ©<br>Threshold Voltage |-1.0 |—- |-25 | V_ | Vos = Ves, Ip = -250HA<br>Forward Transconductance |-—-|79 |—-|[ s | Vos = -15V, Ip = -5.3A ©<br>loss Drain-to-Source Leakage Current |— |-— | -25 | HA Vos = -16V, Ves = OV<br>Gate-to-Source | |— |-250 | Vos = -16V, Vas = OV, Ty = 125 °C<br>nA<br>less Forward Leakage | -—- |-——- |-100 | Ves = -12V<br>Gate-to-Source Reverse Leakage | -—— |—- | 100 | Ves = 12V<br>| TotalGate-to-SourceGate ChargeCharge | -—- |[5.025 | -—— | nc | Voslp = -5.3A= -10V<br>IQga_—_'|_ Gatte-to-Drain ("Miller") Charge |-—— | 8.0 |-— | Ves = -10V ®<br>f.[ RiseTime T urn-On Delay Time f[— | 14 | 30 | Vop = -10V<br>Turn-Off 26 | 60 | |p =-1.08 Ω<br>Ω<br>FallTime Delay Time |Tes|100 [1 5000]| " | R eo = 6.010 @ D<br>Lp Internal Drain Inductance — |; 25 ;— .<br>nH | Between lead,6mm(0.25in.) G<br>Ls Internal Source Inductance — }40 ;— | from. package and center<br>of die contact S<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>**----- End of picture text -----**<br>


≤ ≤ 

ISD ≤ -5.3A, di/dt ≤ Q0A/Us, Vpp ≤ Veerpss: ® Surface mounted on FR-4 board, t ≤ ≤ 

## International Tear Rectifier 

## IRF7204PbF 

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RU SCtiC'rs ET<br>ey aan ee a a eeeoeo yoy -— a2 >. a<br>ee d a<br>§ fC ee ee |<br>|g og LO gee<br>3 | | | | WG nim 5 Waa<br>ee ee) Zee Zee 8 of LL Ger<br>LULA: © tbe<br>‘GyYAAYAAAA ilLIT20usLIT20us20us PULSEneWIDTH|neWIDTH|WIDTH|| 6os |(OrLy Ato<br>‘00 To = 25rc ; YY To = 150°C<br>tor io 10" or! 10° 10!<br>-Vps , Drain-to-Source Voltage ( V ) -Vps , Drain-to-Source Voltage ( V )<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>— SSEeeerrcrrreerySO at »= 25 Eee<br>2 fob reo<br>eC pe ee B Peeeeee<br>3:£ GaneTeerAE67aGnnny - ob-6.c “TTETPPPPPeeeTT TT Tt<br>CDE3 /_ nd eeDE  coeccooreerea<br>2Z6 1 1 s—o22°= :ttLtrToeETT{  tT{tt ttttt<br>OU FA A 3 Py TT tt pete id<br>W7j | tT ft Tt ft vo, = -isv Q<br>yi | | ft | eous pucse wioTH na PT Tf yy dd [ves = -t0v |<br>4 5 6 ? 8 3 10 0-0 50 -40 -20 0 20 40 60 80 100 120 140 160<br>-Veg , Gate-to-Source Voltage ( V ) T, , Junction Temperature ( °C )<br>**----- End of picture text -----**<br>


Fig 3. Typical Transfer Characteristics 

Fig 4. Normalized On-Resistance Vs. Temperature 

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 100<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>= < woBEEED22Z455 aaoe oo<br>2 5 FARIAoe eae AAR eH eyft | ll||<br>7 Taal * in<br>AYE  10 CEE IS 1ms Il<br>Bo SAVER ese eet  ear = Cer<br>© ot} — A Seer set eee oe eT<br>a os A Ce<br>o ny 0 2 a el PT<br>10ms<br>a oe eee ee a ll Hill<br>Soa {fi{ A | tt tt tt  TA = 25  C° ° 1 ll Hill<br> TJ = 150  C<br> Single Pulse<br> 1<br>10AA0.4 0.8 LL1.2 1.6I vcs2.0  =o2.4 0.1 L  1 L  10  100<br>-V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A) D-<br>**----- End of picture text -----**<br>


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6.0 tT | tT | dT | tT | ne ww<br>5.0 PT TE Ves DUT.<br>-<br>PEN TE TT Re + J<br>4.0 Pi tT A ET TT po<br>aN tov<br> 1<br>3.0 eee eeNeee Puse With ≤ 0.1 % us<br>2.0<br>See eeNe Fig 10a. Switching Time Test Circuit<br>Pt tt; tT | dT | rT<br>1.0 Pt te | tT | Te | TA td(on) tr td(off) tf<br>VGS<br>a 10% ne<br>0.0<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>Pi tT Tt Et] tt 90% \/y/\ok<br>VDS \<br>Fig 9. Maximum Drain Current Vs.<br>Ambient Temperature Fig 10b. Switching Time Waveforms<br> 100<br>D = 0.50<br>P CR ee ii<br>en ere || ee ei<br> 10 e 0.20 eatl |<br>0.10<br>0.05 carea<br>e 0.02 it: PDM<br> 1<br>0.01 t1<br>a ea SINGLE PULSE ee Ts eel Oe t2<br>(THERMAL RESPONSE)<br>Notes:<br>Set et<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJA + TA<br>0.1 cor A r<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>pO | [I a .3µF<br>QGS QGD D.U.T. +-VDS<br>VG VGS<br>-3mA th<br>Oe.<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@ •  Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>——|<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent UW<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


## SO-8  Package Outline 

Dimensions are shown in milimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>jaricios 6 H EEE D .189 .1968 4.80 5.00<br>E 0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>—<br>e1 .025  BASIC 0.635  BASIC<br>| ——— H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>a SESS L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>e1 K x 45°<br>A<br>C<br>y<br>0.10 [.004]<br>a! 8X b A1 { : Lf 8X L 8X c<br>0.25 [.010]  C A B O 7<br>FOOTPRINT<br>NOTES:<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER Pr<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>:      MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. ; Q00¢<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>0      MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. Pid<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>     A SUBSTRATE.<br>3X 1.27 [.050] te 8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## SO-8 Part Marking Information (Lead-Free) 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~ee~~ 

DATE CODE (YWW) 

P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y =  LAST DIGIT OF THE YEAR WW =  WEEK A =  ASSEMBLY SITE CODE LOT CODE 

PART NUMBER 

## SO-8 Tape and Reel 

Dimensions are shown in milimeters (inches) 

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TERMINAL NUMBER 1<br>26 © a)<br>12.3 ( .484 )<br>11.7 ( .461 )<br>a<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/04 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF7204TRPBF/power-mosfet-p-channel-20-v-53-a-006-ohm-soic)
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- [Supplier page](https://es.farnell.com/infineon/irf7204trpbf/mosfet-p-ch-20v-5-3a-soic-8/dp/2467999)
---

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