# Dual MOSFET, P Channel, 20 V, 20 V, 2.3 A, 2.3 A, 0.19 ohm

![Product image](https://novapart.co/image/farnell:2467997/)

**URL**: https://novapart.co/products/IRF7104TRPBF/dual-mosfet-p-channel-20-v-23-a-019-ohm
**SKU**: IRF7104TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2660
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltag

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Drain Source Voltage Vds N Channel | 20V |
| Drain Source Voltage Vds P Channel | 20V |
| Continuous Drain Current Id N Channel | 2.3A |
| Continuous Drain Current Id P Channel | 2.3A |
| Drain Source On State Resistance N Channel | 0.19ohm |
| Drain Source On State Resistance P Channel | 0.19ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2467997/)

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G1S1 12 87 D1D1 Voss = -20V<br>S2 3 6 D2 Ros(on) -= 0.250 Ω<br>G2 4 5 D2 Ip =-2.3A<br>Top View<br>**----- End of picture text -----**<br>


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θ<br>Rx ___| Maximum Junctioio-Ambient<br>www.irf.com<br>**----- End of picture text -----**<br>


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 ∆ ∆<br>Ω<br>Rps(on) Static Drain-to-Source On-Resistance [== [0.19 [0.25 | Ves = -10V, Ip = -1.0A ©<br>Gate | — [0.30 |0.40 | Vas = -4.5V, Ip  = -0.50A ©<br>Threshold Voltage |-1.0 |—- |-3.0 | V_ | Vos = Ves, Ip = -250HA<br>Forward Transconductance }-—- [25 |—-|[ s | Vos = -15V, Ip = -2.3A ©<br>loss Drain-to-Source Leakage Current |— |— |-2.0 | HA Vos = -16V, Ves = OV<br>Gate-to-Source | ——- |-—- | -25 | Vos = -16V, Ves = OV, Ty = 55 °C<br>nA<br>less Forward Leakage | -—- |-——- |-100 | Ves = -12V<br>[Qg Gate-to-Source Reverse Leakage | -—— |—- | 100 | Ves = 12V<br>IQs | TotalGate-to-SourceGate ChargeCharge | —-— [93| 1.6 ||-—25 | nc | VosIp = -2.3A= -10V<br>IQga_—_'|_ Gatte-to-Drain ("Miller") Charge |-—— | 3.0 |-— | Ves = -10V ®<br>fi; «df [RiseTime—SSS~S~S] Turn-On Delay Time [— [12 | 40 | Voo = -10V<br>Turn-Off Delay Time [|| 1 | AO] | ty = 1.08 Ω<br>Ω<br>FallTime Tso42 [ 90s0 | ~|| R eo = 6.010 @ D<br>Lp Internal Drain Inductance — ;}40 ;— .<br>nH | Between lead,6mm(0.25in.) G<br>Ls Internal Source Inductance — }60 ;— | from. package and center<br>of die contact S<br>Input Capacitance |--- [290 | — | Vos = OV<br>Ciss Output CapacitanceReverse Transfer Capacitance =——— [210| 67  [=]|—- pF | f vos = =1.0MHz  -15v<br>Source-Drain Ratings and Characteristics<br>Parameter Min. | Typ. |Max.| Units Conditions<br>Is Continuous Source Current 50 MOSFET symbol D<br>(Body Diode) A | showing the<br>I SM Pulsed Source Current | integral reverse G<br>(Body Diode) © —|—|%2 p-n junction diode. S<br>**----- End of picture text -----**<br>


≤ ≤ 

ISD ≤ -2.3A, di/dt ≤ 100A/Us, Vpp ≤ Verpss: ® Surface mounted on FR-4 board, t ≤ Ty ≤ 150°C 2 

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-<br>+<br>:<br> 1<br>≤ 0.1 %<br>pi ti tot<br> 10a. Switching Time Test<br>td(on) tr td(off) tf<br>VGS<br>10% \ / V<br>90% \ /\<br>VDS Lo/<br>**----- End of picture text -----**<br>


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 100<br>B D = 0.500.20 ai<br> 10<br>= 0.10 s reI|<br>0.05<br>= oa om 0<br>0.02<br>PDM<br> 1 = 0.01 S [Doe] T [TLL] eet te<br>epee i SINGLE PULSE t1<br>(THERMAL RESPONSE) t2<br>a e e<br>Notes:<br>en ee ee eee<br>1. Duty factor D = t   / t1 2<br>a 2. Peak TJ= P DMx  ZthJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@ •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>EB :<br>0<br>•   +<br>Re dv/dt controlled by Rg<br>•<br>-<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent e<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


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## RE TIOSP OF **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>- eee b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>j 6 ae H a D .189 .1968 4.80 5.00<br>E<br>0.25 [.010]  A ———— E .1497 .1574 3.80 4.00<br>| 1 2 3 4 [|er—ars] oe e .050  BASIC 1.27  BASIC<br>1 es<br>-——— pf e1 .025  BASIC 0.635  BASIC<br>H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X e<br>oh Pao L .016 .050 0.40 1.27<br>y  0°  8°  0°  8°<br>fr tf ff ft<br>e1 K x 45°<br>A<br>4 -O C |<br>y<br>0.10 [.004]<br>dhe 8X b o A1 n X S L 8X L 8X c Tf<br>0.25 [.010]  C A B 7<br>le} [TT]]<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>ane<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>Too<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| iid<br>003<br>3X 1.27 [.050] — oe<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~m~~ e 

DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR WW =  WEEK 

- A =  ASSEMBLY SITE CODE 

- LOT CODE 

PART NUMBER 

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## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

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TERMINAL NUMBER 1<br>oOo 6<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) | FEED DIRECTION<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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 330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/04 

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- [Supplier page](https://es.farnell.com/infineon/irf7104trpbf/mosfet-dual-p-ch-20v-2-3a-soic/dp/2467997)
---

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