# Power MOSFET, N Channel, 25 V, 213 A, 800 µohm, DirectFET MX, Surface Mount

![Product image](https://novapart.co/image/farnell:2579992/)

**URL**: https://novapart.co/products/IRF6898MTRPBF/power-mosfet-n-channel-25-v-213-a-800-ohm
**SKU**: IRF6898MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 78W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 78W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 800µohm |
| Transistor Case Style | DirectFET MX |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 213A |
| Drain Source On State Resistance | 800µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579992/)

## HEXFE ~~>)~~ Power MOSFET plus Schottky Diode 

RoHs Compliant Containing No Lead and Bromide Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) Dual Sided Cooling Compatible 

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e@  Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on)<br>e@  Low Profile (<0.7 mm) 25V max ±16V max 0.8m Ω @ 10V 1.2m Ω @ 4.5V<br>Dual Sided Cooling Compatible<br>e@  Low Package Inductance Qg  tot Qgd   Qgs2   Qrr   Qoss   Vgs(th)<br>e@  Optimized for High Frequency Switching  41nC 15nC 4.7nC 66nC 43nC 1.6V<br>e@ Ideal for CPU Core DC-DC Converters<br>e@  Optimized for Sync. FET socket of Sync. Buck Converter<br>e  Low Conduction and Switching Losses $$<br>Compatible with existing Surface Mount Techniques S<br> 100% Rg tested  D G D<br>S<br>MX DirectFET ™  ISOMETRIC<br>A © pplicable DirectFET Outline and  Substrate Outline  ) (see p.7,8 for details)<br>SQ SX ST MQ MX MT MP<br>LS<br>**----- End of picture text -----**<br>


## **Description** 

The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. 

## **Absolute Maximum Ratings** 

||**Parameter**<br>**Units**<br>**Max.**|
|---|---|
|VDS|Drain-to-Source Voltage<br>V<br>25<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>±16<br>~~a~~|
|ID @TA= 25°C<br>ID@ TA =70°C<br>ID@ TC =25°C<br>IDM<br>EAS|Continuous Drain Current,VGS@ 10V<br>Continuous Drain Current,VGS@ 10V<br>A<br>Continuous Drain Current,VGS@ 10V<br>Pulsed DrainCurrent<br>Single Pulse Avalanche Energy<br>mJ<br>473<br>28<br>213<br>280<br>35<br>~~:~~<br>~~a”~~<br>~~—<—<——~~<br>~~ae~~<br>~~**©**~~<br>~~GO~~|
|IAR|AvalancheCurrent<br>A<br>28<br>~~©~~|



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3.0<br>ID = 35A<br>ITT<br>2.0<br>TJ = 125°C<br>1.0 IN ——E—<br>==<br>T = 25°C<br>J<br>0.0 P|ippSE<br>2 4 6 8 10 12 14 16<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 1.    Typical On-Resistance vs. Gate Voltage<br>) Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 

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14<br>12 I D = 28A V DS = 20V<br>10 V DS = 13V 2<br>8<br>6<br>SAT<br>4<br>2<br>ATT2<br>0 iy | | | tT |<br>0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical  Total Gate Charge vs. Gate-to-Source Voltage C[ measured with thermocouple mounted to top (Drain) of part.] Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.21mH, RG = 50 Ω , IAS = 28A. 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|25|–––|–––|V|VGS= 0V,ID= 1.0mA|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.02|–––|V/°C|ID= 10mA(25°C-125°C)|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|0.8|1.1|mΩ|VGS= 10V,ID= 35A�|
|||–––|1.2|1.6||VGS= 4.5V,ID= 28A�|
|VGS(th)|Gate Threshold Voltage|1.1|1.6|2.1|V|VDS= VGS,ID= 100μA|
|ΔVGS(th)/ΔTJ|Gate Threshold Voltage Coefficient|–––|-4.9|–––|mV/°C|VDS= VGS,ID= 10mA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|500|μA|VDS= 20V,VGS= 0V|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 16V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -16V|
|gfs|Forward Transconductance|175|–––|–––|S|VDS=13V,ID=28A|
|Qg|Total Gate Charge|–––|41|62|nC|See Fig.15<br>VGS= 4.5V<br>ID= 28A<br>VDS= 13V|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|15|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|4.7|–––|||
|Qgd|Gate-to-Drain Charge|–––|15|–––|||
|Qgodr|Gate Charge Overdrive|–––|6.3|–––|||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|19.7|–––|||
|Qoss|Output Charge|–––|43|–––|nC|VDS= 16V,VGS= 0V|
|RG|Gate Resistance|–––|0.3|–––|Ω||
|td(on)|Turn-On DelayTime|–––|18|–––|ns|See Fig.17<br>ID= 28A<br>VDD= 13V, VGS= 4.5V��<br>RG= 1.8Ω|
|tr|Rise Time|–––|46|–––|||
|td(off)|Turn-Off DelayTime|–––|24|–––|||
|tf|Fall Time|–––|19|–––|||
|Ciss|Input Capacitance|–––|5435|–––|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 13V|
|Coss|Output Capacitance|–––|1780|–––|||
|Crss|Reverse Transfer Capacitance|–––|359|–––|||
|**Diode Characteristics**|||||||
||**Parameter**|**Min.**|**Typ. **|**Max. **|**Units**|**Conditions**|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|35|A|D<br>S<br>G<br>showing  the<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol|
|ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|280|||
|VSD|Diode Forward Voltage|–––|–––|0.75|V|TJ= 25°C,IS= 28A,VGS= 0V�|
|trr|Reverse RecoveryTime|–––|32|48|ns|di/dt = 300A/μs�<br>TJ= 25°C, IF=28A|
|Qrr|Reverse RecoveryCharge|–––|66|99|nC||



## **������** 

- Pulse width ≤ 400μs; duty cycle ≤ 2%. 

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## **Absolute Maximum Ratings** 

||||||||**Parameter**<br>**Max.**|||||||||||||**Units**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|PD @TA= 25°<br>PD@TA =70<br>PD @TC= 25°<br>TP<br>TJ<br>TSTG|= 25°C<br>70°C<br>= 25°C||||||Power Dissipation<br>Power Dissipation<br>Power Dissipation<br>PeakSolderingTemperature<br>Operating Junction and<br>Storage Temperature Range<br>270<br>-40  to + 150<br>78<br>2.1<br>1.3<br>~~ee~~<br>~~a~~<br>~~©~~<br>~~ne~~<br>~~ee~~|||||||||||||W<br>°C|
|**Thermal Resistance**|||||||||||||||||||||
|RθJA<br>RθJA|||||||**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>Junction-to-Ambient<br>–––<br>60<br>Junction-to-Ambient<br>12.5<br>–––<br>~~a~~<br>~~**=**~~||||||||||||||
|RθJA|||||||Junction-to-Ambient<br>20<br>–––<br>~~©~~|||||||||||||°C/W|
|RθJC<br>RθJ-PCB|||||||Junction-to-Case<br>–––<br>1.6<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>~~**a**~~||||||||||||||
||||||||Linear DeratingFactor<br>0.017<br>~~a~~|||||||||||||W/°C|
|||100|||||||||||||||||||
||||||||||||||||||||||
||||||||~~D = 0.50~~||||||||||||||
|0.001<br>0.01<br>0.1<br>1<br>10<br>Thermal Response ( Z thJA )|||||~~0.20~~<br>~~0.10~~<br>0.02<br>~~0.01~~<br>~~0.05~~<br>~~SINGLE PULSE~~<br>~~( THERMAL RESPONSE)~~<br>~~Notes:~~<br>~~1. Duty Factor D = t1/t2~~<br>~~2. Peak Tj= P dm x Zthja + Tc~~<br>~~Par~~<br>~~EE~~<br>~~IE~~||||||||||||||||
|0.0001|||||~~PE~~||||||||||||||||
|||1E-006|||||1E-005<br>0.0001<br>0.001<br>0.01<br>0.1<br>1<br>10||100||||||||1000||||
||||||||t1 , Rectangular Pulse Duration (sec)||||||||||||||



**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Used double sided cooling , mounting pad with large heatsink. (0) R θ is measured at TJ of approximately 90°C. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

©) Surface mounted on 1 in. square Cu (still air). 

@ Mounted to a PCB with small clip heatsink (still air) 

@ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) March 21, 2013 

**�������������** 

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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>100 4.5V 4.5V<br>3.5V 3.5V<br>3.0V 3.0V<br>2.8V2.5V 100 2.8V 2.5V<br>10 BOTTOM 2.3V BOTTOM 2.3V<br>1<br>10<br>2.3V<br>0.1 2.3V<br>≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.01 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 5.** Typical Output Characteristics 

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1000<br>T  = 150°C<br>J<br>100 T = 25°C<br>J<br>T  = -40°C<br>J<br>10<br>1<br>VDS = 15V<br>≤ 60μs PULSE WIDTH<br>0.1<br>1.5 2.0 2.5 3.0 3.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current  (A)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>oss   ds  gd<br>10000<br>C<br>iss<br>C<br>oss<br>1000<br>C<br>rss<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1.6<br>ID = 35A VGS = 10V<br>VGS = 4.5V<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>6.0<br>T J  = 25°C Vgs = 3.5V<br>Vgs = 4.5V<br>5.0<br>Vgs = 5.0V<br>Vgs = 7.0V<br>4.0 Vgs = 8.0V<br>Vgs = 10V<br>Vgs = 12V<br>3.0 Vgs = 15V<br>2.0<br>1.0<br>0.0<br>0 25 50 75 100 125 150 175 200<br>ID, Drain Current (A)<br>) Ω<br>Typical RDS(on) (m<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

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## **�������������** 

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1000<br>100<br>TJ = 150°C<br>10 TJ = 25°C<br>TJ = -40°C<br>VGS = 0V<br>1<br>0.1 0.4 0.7 1.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

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**----- Start of picture text -----**<br>
1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 1ms e c 100μsec<br>10msec<br>10<br>DC<br>1<br>Ta = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0.01 0.1 1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>Fig 11.   Maximum Safe Operating  Area<br>2.5<br>2.0 I D  = 10mA<br>1.5<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>Typical VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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2000<br>1800 ID<br>TOP      1.7A<br>1600<br>2.5A<br>1400 BOTTOM 28A<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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L<br>VCC<br>DUT<br>0<br>201 K S<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>i 20V a<br>t 0.01 Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 15b.** Gate Charge Waveform 

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V(BR)DSS<br>+ tp -><br>/<br>y |i<br>yt<br>(<br>IAS<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
VDS<br>90%<br>10% |\ A\//\ |<br>VGS<br>td(on) tr td(off) tf<br>Fig 17b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T ——— Period D = —<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V t t GS x =10V<br> •<br>-  •   CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>° - B 1 - ® + Current r Current di/dt NN<br>00 @ D.U.T. VDS Waveform Diode Recoverydv/dt \ ><br>. VDD<br>•   Re-Applied<br>•   Driver same type as D.U.T. ** + Voltage Body Diode  Forward Drop<br>Re (a •   dv/dt controlled by Rg Vp p - Inductor Curent a<br>•<br>D.U.T. - Device Under Test e s ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @<br>**----- End of picture text -----**<br>


## **Fig 18.** 

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**----- Start of picture text -----**<br>
for HEXFET ®  Power MOSFETs<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
G=GATE<br>D=DRAIN<br>(4X) (2X) S=SOURCE<br>—a 1.45, .N “—<br>D D<br>A Oo<br>S<br>L Y c o m ba Zs<br>G<br>| —<br>S<br>D D<br>**----- End of picture text -----**<br>


## Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

|DIMENSIONS<br>METRIC<br>IMPERIAL<br>~~ee~~|
|---|
|CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>J<br>K<br>L<br>M<br>R<br>P<br>MAX<br>0.250<br>0.201<br>0.156<br>0.018<br>0.028<br>0.028<br>0.056<br>0.033<br>0.017<br>0.039<br>0.095<br>0.023<br>0.003<br>0.007<br>MAX<br>6.35<br>5.05<br>3.95<br>0.45<br>0.72<br>0.72<br>1.42<br>0.84<br>0.42<br>1.01<br>2.41<br>0.595<br>0.080<br>0.17<br>MIN<br>6.25<br>4.80<br>3.85<br>0.35<br>0.68<br>0.68<br>1.38<br>0.80<br>0.38<br>0.88<br>2.28<br>0.535<br>0.020<br>0.08<br>MIN<br>0.246<br>0.189<br>0.152<br>0.014<br>0.027<br>0.027<br>0.054<br>0.032<br>0.015<br>0.035<br>0.090<br>0.021<br>0.001<br>0.003<br>~~a~~<br>~~ee ee ee ee~~<br>~~a a~~<br>~~eeee~~<br>~~a a~~<br>~~eeee~~<br>~~re ee ee~~<br>~~ee ee~~<br>~~a a~~<br>~~eeee~~<br>~~a a~~<br>~~eeee~~<br>~~re ee ee~~<br>~~ee ee~~<br>~~a a~~<br>~~eeee~~<br>~~re ee ee~~<br>~~ee ee~~<br>~~a a~~<br>~~eeee~~<br>~~a a~~<br>~~eeee~~<br>~~re ee ee~~<br>~~ee ee~~<br>~~a a~~<br>~~eeee~~<br>~~a a~~<br>~~eeee~~<br>~~a~~<br>~~eeee~~<br>~~ee~~|



## DirectFET ™ Part Marking 

## GATE MARKING 

## LOGO 

## PART NUMBER 

## BATCH NUMBER 

## DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

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LOADED TAPE FEED DIRECTION<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
JLs NOTE: Controlling dimensions in mm P4LEtee} |_|]LyCANES|—_YLN I 9a<br>Std reel quantity is 4800 parts. (ordered as IRF6898MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6898MTR1PBF<br>REEL DIMENSIONS<br>O d E G<br>a STANDARD OPTION  (QTY 4800) ( TR1 OPTION  (QTY 1000)<br>METRIC IMPERIAL METRIC IMPERIAL DIMENSIONS<br>a CODE  MIN  MAX  MIN  MAX  MIN  MAX  MIN  MAX METRIC IMPERIAL<br>  A 330.0  N.C 12.992  N.C 177.77 N.C 6.9 N.C NOTE: CONTROLLING CODE  MIN  MAX  MIN  MAX<br>ee   B  20.2  N.C 0.795  N.C 19.06 N.C 0.75 N.C DIMENSIONS IN MM >  A  7.90  8.10 0.311 0.319<br>a   C  12.8  13.2 0.504 0.520 13.5 12.8 0.53 0.50 ee  B  3.90  4.10 0.154 0.161<br>  D   1.5  N.C 0.059  N.C 1.5 N.C 0.059 N.C<br>(es   E C 100.0 e  N.C e 3.937  N.C ee 58.72 ee N.C ee 2.31 ee N.C ee aee  C 11.90 ee 12.30 ee 0.469 0.484<br>  F   N.C  18.4  N.C 0.724 N.C 13.50 N.C 0.53  D  5.45  5.55 0.215 0.219<br>(   G  12.4  14.4 0.488 0.567 11.9 12.01 0.47 N.C ee  E  5.10 ee  5.30 ee 0.201 0.209<br>ee   H  11.9  15.4 0.469 ee 0.606 11.9 12.01 0.47 N.C eeeses  G F ee  6.50 1.50 ee  6.70 N.C 0.2560.059 0.264 N.C<br>a  H  1.50  1.60 0.059 0.063<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

## **Revision History** 

|**Revision History**|||||
|---|---|---|---|---|
|**Date**||||**Comments**|
|3/15/2013|Updated header Qrr  from 32nC to 66nC on page1|Updated header Qrr  from 32nC to 66nC on page1|Updated header Qrr  from 32nC to 66nC on page1|Updated header Qrr  from 32nC to 66nC on page1|



Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6898MTRPBF/power-mosfet-n-channel-25-v-213-a-800-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf6898mtrpbf/mosfet-n-ch-25v-213a-directfet/dp/2579992)
---

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