# Power MOSFET, N Channel + Schottky, 25 V, 163 A, 900 µohm, DirectFET MX, Surface Mount

![Product image](https://novapart.co/image/farnell:2725898/)

**URL**: https://novapart.co/products/IRF6894MTRPBF/power-mosfet-n-channel-schottky-25-v-163-a-900-ohm
**SKU**: IRF6894MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6220
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Channel Type | N Channel + Schottky |
| Product Range | HEXFET |
| Power Dissipation | 54W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel + Schottky |
| Power Dissipation Pd | 54W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 900µohm |
| Transistor Case Style | DirectFET MX |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 163A |
| Drain Source On State Resistance | 900µohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725898/)

IRF6894MPbF IRF6894MTRPbF ~~a~~ 

## ~~Cinfineon~~ 

## HEXFET **[®]** Power MOSFET plus Schottky Diode 

**Typical values (unless otherwise specified)** 

- RoHs Compliant Containing No Lead and Bromide  

- Integrated Monolithic Schottky Diode 

|RoHs Compliant Containing No Lead and Bromide <br>Integrated Monolithic Schottky DiodeIntegrated Monolithic Schottky Diode|RoHs Compliant Containing No Lead and Bromide <br>Integrated Monolithic Schottky DiodeIntegrated Monolithic Schottky Diode|||**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**<br>Integrated Monolithic Schottky DiodeIntegrated Monolithic Schottky Diode<br>Low Profile (<0.7 mm)||||**VGS**||||||||**RDS(on)**|||**RDS(on)**|
|25V min<br>Dual Sided Cooling Compatible |25V min|||±16V max||||||0.9m@ 10V|||||1.4m@ 4.5V|
|**Qg  tot**<br>Low Package Inductance<br>Optimized for High Frequency Switching||||**Qgd**|**d**|**Qgs2**||||||**Qrr**||**Qoss**<br>**Vgs(th)**||
|31nC<br>Ideal for CPU Core DC-DC Converters|||10nC|||3.0nC||||||3.0nC<br>58nC||33nC<br>1.6V||
|Optimized for Sync. FET socket of Sync. Buck Converter<br>Low Conduction and Switching Losses<br>Compatible with existing Surface Mount Techniques <br>100% Rg tested<br>Footprint compatible to DirectFET<br>~~ee~~||||||D|||~~G~~|||D<br>~~S~~<br>S||||
|Applicable DirectFET**™**Outline and  Substrate Outline (see p.7,8 for details)<br>**SQ**<br>**SX**<br>**ST**<br>**MQ**<br>**MX**<br>**Description**<br>~~Cl. _|__ | _ i/'~~||Outline and  Substrate Outline (see p.7,8 for details)<br>**MT**<br>**MP**<br>~~Tl. ~~||||||||DirectFET**™**ISOMETRIC<br>MX<br> ~~1. | |~~<br>~~4~~||||||



The IRF6894MPbF combines the latest HEXFET[®] Power MOSFET Silicon technology with the advanced DirectFET[™] packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET[™] package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET[™ ] package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. 

|||**Parameter**|**Max.**|**Units**|
|---|---|---|---|---|
|VDS||Drain-to-SourceVoltage|25|V|
|VGS||Gate-to-Source Voltage|±16||
|ID @TA= 25°C||ContinuousDrainCurrent,VGS @10V(Silicon Limited)|37|A|
|ID@ TA =70°C||Continuous Drain Current, VGS@ 10V (Silicon Limited)|29||
|ID @TC= 25°C||ContinuousDrainCurrent,VGS @10V(Silicon Limited)|163||
|IDM||Pulsed Drain Current|296||
|EAS||SinglePulseAvalancheEnergy |540|mJ|
|IAR||Avalanche Current|30|A|
|0.0<br>1.0<br>2.0<br>3.0<br>4.0<br>Typical RDS(on) (m)<br>I<br>D<br>= 37A<br>T<br>J<br>= 25°C<br>~~T~~<br>J<br>~~= 125°C~~<br>0<br>2<br>4<br>6<br>8<br>10<br>12<br>14<br>VGS, Gate-to-Source Voltage (V)<br>~~V~~<br>DS<br>~~= 20V~~<br>~~V~~<br>~~DS~~<br>~~= 13V~~<br>VDS= 5V<br>I<br>~~D~~<br>= 30A<br>~~ALLELE~~<br>~~Tr~~<br>~~om~~<br>~~ReRR PEE~~<br>~~FEE SAE~~<br>~~PERSE~~<br>~~pa2eeee~~<br>~~PLitoEE~~<br>~~WEEC~~|||||



**Fig 1.** Typical On-Resistance vs. Gate Voltage 

Notes 

-  Click on this section to link to the appropriate technical paper. 

-  Click on this section to link to the DirectFET[™] Website. 

-  Surface mounted on 1 in. square Cu board, steady state. 

**Fig 2.** Typical Total Gate Charge vs. Gate-to-Source Voltage 

-  TC measured with thermocouple mounted to top (Drain) of part. 

 Repetitive rating;  pulse width limited by max. junction temperature. 

 Starting TJ = 25°C, L = 1.2mH, RG = 50, IAS = 30A. 

1 

2016-10-13 

~~Cinfineon~~ 

IRF6894MTRPbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~es~~|**Parameter**<br>~~eG~~<br>~~ee~~|**Min.**<br>~~eG~~<br>~~rs~~|**Typ. Max.**<br>~~eG~~<br>~~rs~~|**. Max.**<br>~~eG~~<br>~~ee~~|**Units**<br>~~eG~~|**Conditions**<br>~~eG~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~eG~~<br>~~ee~~|25<br>~~eG~~<br>~~rs~~|–––<br>~~eG~~<br>~~rs~~|–––<br>~~eG~~<br>~~ee~~|V<br>~~eG~~|VGS= 0V, ID= 1.0mA<br>~~eG~~|
|VDSS/TJ<br>~~es ~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br> ~~ee~~<br>~~ee~~|–––<br>~~rs~~<br>~~ee~~|0.02<br>~~rs ~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~|V/°C I<br>~~ee~~|V/°C ID= 10mA(25°C-125°C)<br>~~ee~~|
|RDS(on)<br>~~ee~~<br>~~a~~<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~ee~~|0.9<br>~~ee~~|1.3<br>~~ee~~|m<br>~~ee~~<br>~~ss~~|VGS= 10V, ID= 37A<br>~~ee~~<br>~~PO~~|
|~~ee~~<br>~~a~~|~~rs~~|–––<br>~~Oe~~|1.4<br>~~Os~~|1.8<br>~~ss~~||VGS= 4.5V, ID= 30A<br>~~PO~~|
|VGS(th)<br>~~ee~~<br>~~a~~|Gate Threshold Voltage<br>~~rs~~|1.1<br>~~Oe~~|1.6<br>~~Os~~<br>~~Gs~~|2.1<br>~~ss~~<br>~~Gs~~|V<br>~~ss~~|VDS= VGS, ID= 100µA<br>~~PO~~|
|VGS(th)/TJ<br>~~a~~<br>~~ee~~<br>~~ee~~|Gate Threshold Voltage Temp. Coefficient<br>~~rs~~<br>~~ee~~<br>|–––<br>~~Oe~~<br>~~ee~~<br>~~rs~~<br>|-3.8<br>~~Os ~~<br>~~ee~~<br>~~Gs~~<br>~~Qs~~<br>|–––<br> ~~ss~~<br>~~ee~~<br>~~Gs~~<br>~~Qs~~<br>|mV/°C V<br>~~ss~~<br>~~ee~~<br>|mV/°C VDS= VGS,ID= 10mA<br>~~ee~~<br>|
|IDSS<br>~~ee~~<br>~~ee~~|Drain-to-Source Leakage Current<br>~~ee~~<br>|–––<br>~~ee~~<br>~~rs~~<br>|–––<br>~~Gs~~<br>~~ee~~<br>~~Qs~~<br>|500<br>~~Gs~~<br>~~ee~~<br>~~Qs~~<br>|µA<br>~~ee~~<br>|VDS= 20 V,VGS= 0V<br>~~ee~~<br>|
|IGSS<br>~~ee  _~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~_~~<br>~~a~~|–––<br>~~rs~~<br>~~_~~|–––<br>~~Qs~~<br>~~_~~|100<br>~~Qs~~<br>~~_~~|nA<br>~~_~~<br>~~QO (~~|VGS= 16V<br>~~_~~|
||Gate-to-Source Reverse Leakage<br>~~_~~<br>~~a~~|–––<br>~~rs~~<br>~~_~~|–––<br>~~Qs~~<br>~~_~~<br>~~QO~~|-100<br>~~Qs~~<br>~~_~~<br>~~QO~~||VGS = -16V<br>~~_~~<br>~~(~~|
|gfs<br>~~ee  _~~<br>~~a~~<br>~~eG~~|Forward Transconductance<br>~~_~~<br>~~a~~<br>~~eG~~|193<br>~~rs~~<br>~~_~~<br>~~eG~~|–––<br>~~Qs~~<br>~~_~~<br>~~eG~~<br>~~QO~~|–––<br>~~Qs~~<br>~~_~~<br>~~eG~~<br>~~QO~~|S<br>~~_~~<br>~~eG~~<br>~~QO (~~|VDS= 13V,ID= 30A<br>~~_~~<br>~~eG~~<br>~~(~~|
|Qg<br>~~eG~~<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~eG~~<br>~~ee~~|–––<br>~~eG~~<br>~~ee~~|31<br>~~eG~~<br>~~QO~~<br>~~ee~~|47<br>~~eG~~<br>~~QO~~<br>~~ee~~|nC<br>~~eG~~<br>~~QO  (~~<br>|VDS= 13V<br>VGS= 4.5V<br>ID= 30A<br>See Fig 15<br>~~eG~~<br>~~(~~<br>|
|Qgs1<br>~~ee~~|Pre– VthGate-to-Source Charge|–––|8.1|–––|||
|gs1<br>Qgs2<br>~~ee~~<br>~~ee~~|Post– Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|3.0<br>~~ee~~|–––<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~es~~|Gate-to-Drain Charge<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|10<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>|||
|Qgodr<br>~~ee~~<br>~~es~~|Gate Charge Overdrive<br>~~es~~<br>|–––<br>~~es~~<br>~~ee~~<br>|10<br>~~es~~<br>|–––<br>~~es~~<br>|||
|Qsw<br>~~ee~~<br>~~es~~<br>~~a~~|Switch Charge(Qgs2+ Qgd)<br>~~es~~<br>|–––<br>~~es~~<br>~~ee~~<br><br>~~ss~~|13<br>~~es~~<br><br>~~ss~~|–––<br>~~es~~<br>|||
|Qoss<br>~~esee~~<br>~~a~~|Output Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ss~~|33<br>~~ee~~<br>~~ss~~|–––<br>~~ee~~|nC<br>~~ee~~|VDS= 16V,VGS= 0V<br>~~ee~~|
|RG<br>~~a~~<br>~~es~~|Gate Resistance|–––<br>~~ss~~|0.2<br>~~ss~~|–––|||
|td(on)<br>~~a~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-On DelayTime<br>~~es~~<br>|–––<br>~~ss~~<br>~~es~~<br>~~es~~<br>|17<br>~~ss~~<br>~~es~~<br>|–––<br>~~es~~<br>|ns|VDD= 13V, VGS= 4.5V<br>ID= 30A<br>RG= 1.8<br>See Fig17|
|tr<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Rise Time<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br><br>~~es~~|47<br>~~es~~<br>|–––<br>~~es~~<br>|||
|td(off)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-Off DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|23<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|||
|tf<br>~~ee~~<br>~~es~~<br>~~es~~|Fall Time<br>|–––<br>~~es~~<br><br>~~es~~|13<br>|–––<br>|||
|Ciss<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>|4232<br>~~es~~<br>|–––<br>~~es~~<br>|pF|VGS= 0V<br>VDS= 13V<br>ƒ= 1.0MHz|
|Coss<br>~~es~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>|1260<br>~~es~~<br>|–––<br>~~es~~<br>|||
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|255<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|||
|**Diode Characteristics**<br>~~es~~<br>~~ee~~<br>~~GsQeGO~~|||||||
|~~GG~~|**Parameter **<br>~~GG~~|**Min.**<br>~~GG~~|**Typ. M**<br>~~GG~~<br>~~Gs~~|**. Max.**<br>~~GG~~<br>~~Qe~~|**Units**<br>~~GG~~<br>~~G~~|**Conditions**<br>~~GG~~<br>~~GO~~|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––<br>~~Gs~~|37<br>~~Qe~~|A<br>~~G~~<br>~~ss~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~GO~~|
|ISM|Pulsed Source Current<br>(Body Diode)|–––|–––<br>~~es~~|296<br>~~ss~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~<br>~~es~~|0.75<br>~~es~~<br>~~ss~~|V<br>~~es~~<br>~~ss~~|TJ= 25°C, IS= 30A, VGS= 0V<br>~~es~~|
|trr<br>~~a~~<br>~~es~~|Reverse RecoveryTime<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|28<br>~~es ~~<br>~~a~~<br>~~a~~<br>~~ee~~|42<br> ~~ss~~<br>~~a~~<br>~~a~~<br>~~ee~~|ns<br>~~ss~~<br>~~a~~<br>~~a~~|TJ= 25°C, IF= 30A<br>di/dt = 320A/µs<br>~~a~~|
|Qrr<br>~~a~~<br>~~es~~|Reverse RecoveryCharge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|58<br>~~a~~<br>~~a~~<br>~~ee~~|87<br>~~a~~<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~a~~||



Notes: 

>  Repetitive rating;  pulse width limited by max. junction temperature. 

>  Pulse width ≤ 400µs; duty cycle ≤ 2%. 

2 

2016-10-13 

## ~~Cinfineon~~ 

## IRF6894MTRPbF ~~[FT~~ 

## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|PD @TA= 25°C<br>P|Power Dissipation|2.8|W|
|PD@TA =70°C<br>Power Dissipation|Power Dissipation|1.8||
|PD@TC =25°C<br>Power Dissi|Power Dissipation|54||
|TP<br>Peak Solderin|Peak SolderingTemperature|270|°C|
|TJ<br>Operating Junction and<br>TSTG<br>Stora|Operating Junction and<br>Storage Temperature Range|-40  to + 150||



|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Symbol**||||**Parameter**||||||||||||||||||**Typ.**<br>**Max.**||||**Max.**||||||||**Units**|
|RJA|||||Junction-to-Ambient||||||||||||||||||–––|45||45||||||||||
|RJA|||||Junction-to-Ambient||||||||||||||||||12.5<br>–––|||||||||||||
|RJA|||||Junction-to-Ambient||||||||||||||||||20<br>–––||||||||||||°C/W|
|RJC|||||Junction-to-Can||||||||||||||||||–––<br>2.3|||||||||||||
|RJA-PCB|||||Junction-to-PCB Mounted||||||||||||||||||1.0<br>–––|||||||||||||
||||||Linear DeratingFactor||||||||||||||||||0.022||||||||||||W/°C|
|1E-006<br>1E-005<br>0.0001<br>0.001<br>0.01<br>0.1<br>1<br>10<br>100<br>1000<br>0.0001<br>0.001<br>0.01<br>0.1<br>1<br>10<br>100<br>Thermal Response ( Z thJA )<br>~~0.20~~<br>~~0.10~~<br>~~D = 0.50~~<br>~~0.02~~<br>~~0.01~~<br>~~0.05~~<br>~~SINGLE PULSE~~<br>~~( THERMAL RESPONSE)~~<br>Notes:<br>~~1. Duty Factor D = t1/t2~~<br>~~2. Peak Tj= P dm x Zthja + Tc~~<br>~~Ceees 2 oui ti Wd~~<br>~~i mai i NN~~<br>~~CICA~~<br>~~BNuM~~<br>~~“ill~~<br>~~HN~~||||||||||||||||||||||||||||||||||||
||||||||||||t1 , Rectangular Pulse Duration (sec)|t1 , Rectangular Pulse Duration (sec)||||||t1 , Rectangular Pulse Duration (sec)||||||||||||||||||



## **Fig 3** .  Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

## **Notes:** 

 Used double sided cooling, mounting pad with large heatsink. 

-  Surface mounted on 1 in. square Cu board, steady state.  TC measured with thermocouple incontact with top (Drain) of part. 

-  Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

 R is measured at TJ of approximately 90°C. 

 Surface mounted on 1 in. square Cu  Mounted to a PCB with small clip  Mounted on minimum footprint full size board with metalized heatsink (still air) board  (still air). back and with small clip heatsink (still air) 

3 

2016-10-13 

IRF6894MTRPbF 

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1000 1000<br>100<br>100<br>10<br>VGS VGS<br>TOP           10V 2.5V TOP           10V<br>5.0V 5.0V<br>2.5V 4.5V 10 4.5V<br>3.5V 3.5V<br>1 3.3V 3.3V<br>3.0V 3.0V<br>2.8V 2.8V<br>BOTTOM 2.5V BOTTOM 2.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.1 cee 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>Fig 4.   Typical Output Characteristics<br>1000 1.6<br>ID = 37A VGS = 10V<br>TJ = 150°C 1.4 VGS = 4.5V<br>100 TJ = 25°C<br>TJ = -40°C<br>[TPF] ft<br>1.2<br>10<br>1.0<br>1 | [| 528<br>0.8<br>VDS = 15V<br>60µs PULSE WIDTH<br>EEE<br>0.1 0.6<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics  Fig 7.   Normalized On-Resistance vs. Temperature<br>100000 5.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED TJ = 25°C Vgs = 3.5V<br>C rss    = C gd  Vgs = 4.5V<br>Coss  = Cds + Cgd 4.0 Vgs = 5.0V<br>Vgs = 7.0V<br>10000 Vgs = 8.0V<br>3.0 Vgs = 10V<br>Ciss Vgs = 12V<br>C oss Vgs = 15V<br>2.0<br>1000<br>Crss<br>1.0<br>Hintwl See<br>100 UII 0.0 RREREEE<br>0.1 1 10 100 0 25 50 75 100 125 150 175 200<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>)<br>C, Capacitance(pF) <br>Typical RDS(on) (m<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current **Fig 8.** Typical Capacitance vs. Drain-to-Source Voltage and Gate Voltage 4 2016-10-13 ~~=|~~ 

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## ~~Cinfineon~~ 

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1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100µsec<br>100 | 100<br>VA Satelite 10msec 1msec<br>4 pete<br>10<br>10 T T J J   = 150°C = 25°C 1<br>fh TJ = -40°C 0.1 pod T A  = 25°C Ao DC<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>Af 0.01 spare<br>1<br>0.0 0.1 1.0 10.0 100.0<br>0.1 0.4 0.7 1.0<br>VDS  , Drain-toSource Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>Fig 10.   Typical Source-Drain Diode Forward Voltage  Fig 11.   Maximum Safe Operating Area<br>180 2.5<br>160<br>140 PNT |<br>120 2.0 I D  = 10mA<br>100 PE TN<br>Pp TN | eKJI<br>80<br>FEES} LLLATN<br>60 EX 1.5 NO<br>40<br>20 p | | hm] hmd| YY<br>FEEEYpo LLL<br>0 1.0<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>ID,  Drain Current (A)<br>Typical VGS(th) Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

**==> picture [210 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
2500<br>ID<br>TOP      2.0A<br>2000<br>3.0A<br>BOTTOM 30A<br>ae NUE<br>1500<br>1000<br>CGH<br>500<br>| TPES<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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**Fig 15a.** Gate Charge Test Circuit 

**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 17a.** Switching Time Test Circuit 

**Fig 15b.** Gate Charge Waveform 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

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## ~~———————$—~~ 

**Fig 18.** Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs 

## **DirectFET[™ ] Board Footprint, MX Outline (Medium Size Can, X-Designation).** 

Please see DirectFET **[™]** application note AN-1035 for all details regarding the assembly of DirectFET **[™]** . This includes all recommendations for stencil and  substrate designs. 

**==> picture [279 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
G=GATE<br>D=DRAIN<br>S=SOURCE<br>= — _<br>D D<br>A<br>S<br>G<br>S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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## ~~Cinfineon~~ 

## **DirectFET[™] Outline Dimension, MX Outline (Medium Size Can, X-Designation).** 

Please see DirectFET **[™ ]** application note AN-1035 for all details regarding the assembly of DirectFET **[™]** . This includes all recommendations for stencil and  substrate designs. 

||DIMENSIONS|DIMENSIONS|DIMENSIONS||
|---|---|---|---|---|
||METRIC||IMPERIAL||
|CODE|MIN|MAX|MIN|MAX|
|A|6.25|6.35|0.246|0.250|
|B|4.80|5.05|0.189|0.201|
|C|3.85|3.95|0.152|0.156|
|D|0.35|0.45|0.014|0.018|
|E|0.68|0.72|0.027|0.028|
|F|0.68|0.72|0.027|0.028|
|G|1.38|1.42|0.054|0.056|
|H|0.80|0.84|0.032|0.033|
|J|0.38|0.42|0.015|0.017|
|K|0.88|1.01|0.035|0.039|
|L|2.28|2.41|0.090|0.095|
|M|0.535|0.595|0.021|0.023|
|R|0.020|0.080|0.001|0.003|
|P|0.08|0.17|0.003|0.007|



## **DirectFET[™ ] Part Marking** 

Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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## **DirectFET[™ ] Tape & Reel Dimension (Showing component orientation).** 

Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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## **Qualification Information** 

|**Qualification Information**|||
|---|---|---|
|**Qualification Level**|Industrial†||
|**Moisture Sensitivity Level**|DirectFET**™**Medium Can|Medium Can<br>MSL1<br>(per JEDEC J-STD-020D†)|
|**RoHS Compliant**|Yes||



- Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
||Changed datasheet with “Infineon” logo –all pages.|
||Changed  Rth from “60°C/W” to “45°C/W” –page 3|
|10/13/2016|Changed  ID @ TA 25C/70C from “32A/25A” to “37A/29A” –page 1 & 2.|
||Changed  Fig.1 to Fig.15 –page 1 to 9.|
||Added disclaimeron last page.|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRF6894MTRPBF/power-mosfet-n-channel-schottky-25-v-163-a-900-ohm)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf6894mtrpbf/mosfet-n-ch-schottky-25v-directfet/dp/2725898)
---

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