# Power MOSFET, N Channel, 200 V, 19 A, 0.1 ohm, DirectFET MZ, Surface Mount

![Product image](https://novapart.co/image/farnell:2839482RL/)

**URL**: https://novapart.co/products/IRF6785MTRPBF/power-mosfet-n-channel-200-v-19-a-01-ohm-directfet
**SKU**: IRF6785MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8300
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | - |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 57W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MZ |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 19A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839482RL/)

~~t~~ PD -97282 IRF6785MTRPbF ~~pT~~ **Key Parameters** ~~ee~~ VDS ~~ee~~ 200 ~~ee~~ V ~~ee~~ RDS(on) typ. @ VGS = 10V ~~ee~~ 85 ~~ee~~ m ~~re~~ Qg typ. ~~ee~~ 26 nC ~~ee~~ RG(int) max 3.0 ~~eeee~~ 

## T@R Rectitier 

## **Features** 

- Latest MOSFET Silicon technology 

- Key parameters optimized for Class-D audio amplifier applications 

- Low RDS(on) for improved efficiency 

- Low Qg for better THD and improved efficiency 

- Low Qrr for better THD and lower EMI 

|• Low Qg for better THD and improved efficiencyLow Qg for better THD and improved efficiencyg for better THD and improved efficiencyfor better THD and improved efficiency<br>• Low Qrr for better THD and lower EMILow Qrr for better THD and lower EMIrr for better THD and lower EMIfor better THD and lower EMI|||RG(int) maxG(int) maxmax<br>~~eeee~~|RG(int) maxG(int) maxmax<br>~~eeee~~|~~eeee~~|~~eeee~~|3.0<br>~~ee~~<br>~~eeee~~<br>~~ee~~|~~ee~~<br>~~eeee~~|
|---|---|---|---|---|---|---|---|---|
|•Low package stray inductance for reduced ringing and lower|Low package stray inductance for reduced ringing and lower||||||~~ee~~||
|EMI<br>•Can deliver up to 250W per channel into 8ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>e||||“<br>s<br>||||4<br>ia ag‘||
|RoHS compliant containing no lead or bromide|||||||||
|Lead-Free (Qualified up to 260°C Reflow)||||MZ|||DirectFET<br>ISOMETRIC<br>rH||
|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details||. 6, 7 for details)|||||||
|**Description**<br>SQ<br>SX<br>ST<br>SH<br>MQ<br>~~SS~~|MX|MT|MN|**MZ**|||||



## **Description** 

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest  processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. 

The IRF6785MPbF device utilizes DirectFET[TM] packaging technology.  DirectFET[TM] packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging.  Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.  The DirectFET[TM] package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.  The DirectFET[TM] package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratingsgss**|||
|---|---|---|---|
||**Parameter**|**Max.**|**Units**|
|VDS<br>~~es~~<br>~~eS~~|Drain-to-Source Voltage<br>~~es~~|200|V<br>~~|~~<br>~~_~~|
|VGS<br>~~es~~<br>~~eS~~|Gate-to-Source Voltage<br>~~es~~|± 20||
|ID@ TC= 25°C<br>~~es~~<br>~~eS~~<br>~~eS~~|Continuous Drain Current, VGS@ 10V<br>~~es~~|19|A<br>~~|~~<br>~~_~~<br>~~il~~|
|ID@ TA= 25°C<br>~~es~~<br>~~eS~~<br>~~eS~~|Continuous Drain Current, VGS@ 10V<br>~~es~~|3.4||
|ID@ TA= 70°C<br>~~eS~~<br>~~eS~~|Continuous Drain Current, VGS@ 10V|2.7||
|IDM<br>~~eS~~<br>~~re~~<br>~~eS~~|Pulsed Drain Current<br>~~re~~<br>~~ee~~|27<br>~~re~~||
|PD@TC= 25°C<br>~~a~~<br>~~eS~~|Maximum Power Dissipation<br>~~a~~<br>~~ee~~|57<br>~~a~~|W<br>~~il~~|
|PD@TA= 25°C<br>~~a~~<br>~~—~~<br>~~eS~~|Power Dissipation<br>~~a~~<br>~~—~~<br>~~ee~~|2.8<br>~~a~~<br>~~—~~||
|PD@TA= 70°C<br>~~eS~~|Power Dissipation<br>~~ee~~|1.8||
|EAS<br>~~eS~~<br>~~a~~|Single Pulse Avalanche Energy<br>~~ee~~<br>~~a~~|33<br>~~a~~|mJ<br>~~il~~<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|8.4<br>~~a~~|A<br>~~a~~|
|~~a~~<br>~~eS~~|Linear Derating Factor<br>~~a~~<br>~~ee~~|0.022<br>~~a~~<br>~~ee~~|W/°C<br>~~a~~<br>~~ee~~|
|TJ<br>TSTG<br>~~a~~<br>~~eS~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~ee~~|-40  to + 150<br>~~a~~<br>~~ee~~|°C<br>~~a~~<br>~~ee~~|



04/18/07 

## IRF6785MTRPbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~es~~<br>~~es~~|**Parameter**<br>~~BD~~<br>~~DG~~<br>|**Min.**<br>~~BD~~<br>~~DD~~<br>~~DG~~<br>|**Typ.**<br>~~BD~~<br>~~DD~~<br>~~GD~~<br>|**Max.**<br>~~BD~~<br>~~GD~~<br>|**Units**<br>~~BD~~<br>~~GO~~|**Conditions**<br>~~BD~~|
|---|---|---|---|---|---|---|
|gfs<br>~~es~~<br>~~es~~<br>~~es~~|Forward Transconductance<br>~~BD~~<br>~~DG~~<br>|8.9<br>~~BD~~<br>~~DD~~<br>~~DG~~<br>|–––<br>~~BD~~<br>~~DD~~<br>~~GD~~<br>|–––<br>~~BD~~<br>~~GD~~<br>|S<br>~~BD~~<br>~~GO~~|VDS= 10V, ID= 4.2A<br>~~BD~~|
|Qg<br>~~es~~<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~DG~~<br>~~Rs~~|–––<br>~~DD~~<br>~~DG~~<br>~~Rs~~|26<br>~~DD~~<br>~~GD~~<br>~~Rs~~|36<br>~~GD~~<br>~~Rs~~|nC<br>~~GO~~|VDS= 100V<br>VGS= 10V<br>ID= 4.2A<br>See Fig. 6 and 17|
|Qgs1<br>~~es~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>~~DG~~<br>~~Rs~~|–––<br>~~DG ~~<br>~~Rs~~|6.3<br> ~~GD~~<br>~~Rs~~|–––<br>~~GD~~<br>~~Rs~~|||
|Qgs2<br><br>~~es~~<br>~~es~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br>~~Rs~~<br>~~Rs~~|–––<br>~~Rs~~<br>~~Rs~~|1.3<br>~~Rs~~<br>~~Rs~~|–––<br>~~Rs~~<br>~~Rs~~|||
|Qgd<br>~~es~~<br>~~es~~|Gate-to-Drain Charge<br>~~Rs~~|–––<br>~~Rs~~|6.9<br>~~Rs~~|–––<br>~~Rs~~|||
|Qgodr<br>~~es~~<br>~~es~~<br>~~es~~|Gate Charge Overdrive<br>~~Rs~~|–––<br>~~Rs~~|11.5<br>~~Rs~~|–––<br>~~Rs~~|||
|Qsw<br>~~es~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>~~Rs~~|–––<br>~~Rs~~|8.2<br>~~Rs~~|–––<br>~~Rs~~|||
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~Rs~~|–––<br>~~Rs~~|6.2<br>~~Rs~~|–––<br>~~Rs~~|ns|VGS= 10V<br>VDD= 100V<br>ID= 4.2A<br>RG= 6.0Ω<br>~~®@~~|
|tr<br>~~es~~<br>~~es~~|Rise Time<br>~~Rs~~|–––<br>~~Rs~~|8.6<br>~~Rs~~|–––<br>~~Rs~~|||
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~Rs~~|–––<br>~~Rs~~|7.2<br>~~Rs~~|–––<br>~~Rs~~|||
|tf<br>~~es~~<br>~~es~~|Fall Time<br>~~Rs~~|–––<br>~~Rs~~|14<br>~~Rs~~|–––<br>~~Rs~~|||
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~Rs~~|–––<br>~~Rs~~|1500<br>~~Rs~~|–––<br>~~Rs~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~®@~~<br>~~ee~~|
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~Rs~~|–––<br>~~Rs~~|160<br>~~Rs~~|–––<br>~~Rs~~|||
|Crss<br>~~es~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~Rs~~|–––<br>~~Rs~~|31<br>~~Rs~~|–––<br>~~Rs~~|||
|Coss<br>~~es~~<br>~~ee~~|Output Capacitance<br>~~Rs~~|–––<br>~~Rs~~|1140<br>~~Rs~~|–––<br>~~Rs~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz<br>~~ee~~|
|Coss<br>~~ee~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~Rs~~|–––|69|–––||VGS= 0V,  VDS= 160V,ƒ= 1.0MHz<br>~~ee~~<br>~~pO~~|
|Cosseff.<br>~~es~~<br>~~es~~|Effective Output Capacitance<br>~~Rs~~|–––|140|–––||VGS= 0V, VDS= 0V to 160V<br>~~pO~~|



## **Diode Characteristics** 

|~~es~~|**Parameter**<br>~~DO~~|**Min.**<br>~~DO~~|**Typ.**<br>~~ON~~|**Max.**<br>~~ON~~|**Units**<br>~~QO~~|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~es~~|Continuous Source Current<br>(BodyDiode)<br>~~DO~~|–––<br>~~DO ~~|–––<br> ~~ON~~|19<br>~~ON~~|A<br>~~QO~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM|Pulsed Source Current<br>(BodyDiode)|–––|–––|27|||
|VSD<br>~~es~~|Diode Forward Voltage<br>~~es~~|–––<br>~~es~~<br>~~ID~~|–––<br>~~es~~<br>~~OD~~|1.3<br>~~es~~|V<br>~~es~~|TJ= 25°C,IS= 4.2A,VGS= 0V<br>~~es~~|
|trr<br>~~es~~<br>~~pf~~|Reverse RecoveryTime<br>~~es~~<br>~~pf~~|–––<br>~~es~~<br>~~ID ~~<br>~~pf~~|71<br>~~es~~<br> ~~OD~~<br>~~pf~~|–––<br>~~es~~<br>~~pf~~|ns<br>~~es~~<br>~~pf~~|TJ= 25°C, IF= 4.2A, VDD= 25V<br>di/dt = 100A/µs<br>~~es~~<br>~~pf~~<br>~~®~~|
|Qrr<br>~~pf~~<br>~~es~~|Reverse RecoveryCharge<br>~~pf~~|–––<br>~~pf~~|190<br>~~pf~~|–––<br>~~pf~~|nC<br>~~pf~~||



Notes: ~~o©~~ Used double sided cooling , mounting pad with large heatsink. 

Used double sided cooling , mounting pad with large heatsink. @ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

Repetitive rating;  pulse width limited by max. junction temperature. © Starting TJ = 25°C, L = 0.94mH, RG = 25Ω, IAS = 8.4A. @ Surface mounted on 1 in. square Cu board. ® Pulse width ≤ 400µs; duty cycle ≤ 2%. 6 Coss eff. is a fixed capacitance that gives the same[©] charging time as Coss while VDS is rising from 0 to 80% VDSS. 

TC measured with thermal couple mounted to top (Drain) of part. 

Rθ is measured at TJ of approximately 90°C. 

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## IRF6785MTRPbF 

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**----- Start of picture text -----**<br>
100<br>VGS<br>TOP           15V<br>10V<br>9.0V<br>8.0V<br>7.0V<br>6.5V<br>10 6.0V<br>BOTTOM 5.5V<br>ae eeeviasaemerti<br>5.5V<br>1<br>ANN E<br>er ≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.1 SHH aw LUI<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100<br>VDS = 25V<br>≤60µs PULSE WIDTH<br>=<br>10 TJ = -40°C<br>TJ = 25°C<br>TJ = 150°C<br>1 | a Af}<br>0.1 ey ye<br>3 4 5 6 7 8<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


VGS, Gate-to-Source Voltage (V) 

**Fig 3.** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
100<br>VGS<br>TOP           15V<br>10V<br>9.0V<br>8.0V<br>7.0V<br>6.5V<br>10 6.0V 5.5V<br>BOTTOM 5.5V<br>py Meeeeii er eelr<br>1<br>P ell<br>er SS Sea<br>m n ≤60µs PULSE WIDTH<br>Tj = 150°C<br>0.1 Ane. Ton<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 4.2A<br>VGS = 10V<br>TTT TT<br>2.0<br>1.5<br>n nnnal<br>TTT TAT<br>1.0<br>0.5 ae<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**==> picture [506 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000 12.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED ID= 4.2A<br>Crss    = Cgd  10.0<br>10000 Coss   = Cds + Cgd VDS= 160V<br>tT]F T i 8.0 Ft VDS= 100V WHA<br>VDS= 40V<br>Ciss<br>1000 6.0<br>Coss<br>4.0<br>100 Crss<br>a N »4n nn<br>2.0<br>10 ed 0.0 J} i} i |<br>1 10 100 1000 0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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## IRF6785MTRPbF 

**==> picture [213 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Pf ff<br>TJ = -40°C sae<br>|<br>TJ = 25°C<br>10 TJ = 150°C<br>S ————H<br>espfee eeee | a oea<br>1<br>p if) fyfp| |<br>P F pp<br>VGS = 0V<br>pel ea<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [211 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>~ ~<br>15 ww<br>~<br>10<br>a A\<br>5<br>0 et LLIN<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**==> picture [212 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>SHA iti<br>St25 h ree eer 100µsec eee<br>10<br>Ti Tdh ae M e Tie<br>ee stieeEO e ene eet | est e S t HHH<br>10msec<br>1msec<br>1 DC tt<br>SaB Nn a u e t pagel Sae<br>Re TA = 25°C e ma A<br>Tj = 150°C<br>Single Pulse<br>Bl RSete e e te<br>0.1<br>0 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>5.0<br>T NT TT.<br>4.5<br>I NA EEE<br>a e Weeen<br>4.0<br>3.5 ID = 100µA<br>ID = 250µA<br>aN4<br>3.0<br>2.5 TEEELBEEESRN<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

**==> picture [448 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02 R 1 R 1 R2 R2 R 3 R3 R4R4 Ri (°C/W)    τi (sec)<br>0.01 τJ τJ τAτA 1.2801       0.000322<br>0.1 τ1 τ1 τ2 τ2 τ3 τ3 τ4 τ4 8.7256       0.16479821.75         2.2576<br>Ci= τi/Ri<br>Ci= τi/Ri 13.2511     69<br>SINGLE PULSE<br>0.01 e t ( THERMAL RESPONSE ) 00) Notes: |<br>1. Duty Factor D = t1/t2<br>0.001 PUI Ta si CLEVER EEE EEE EEA 2. Peak Tj = P dm x Zthja + T A |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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4 

IRF6785MTRPbF 

**==> picture [226 x 224] intentionally omitted <==**

**----- Start of picture text -----**<br>
TOR Rectitier<br>500<br>ID = 4.2A<br>400<br>EEL<br>300<br>AT<br>200 TJ = 125°C<br>yt tt<br>100 || Er<br>TJ = 25°C<br>0 tio<br>4 6 8 10 12 14 16<br>VGS, Gate -to -Source Voltage  (V)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

**==> picture [166 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>af + tp Do-e- 0.01Ω ]<br>**----- End of picture text -----**<br>


**Fig 15a.** Unclamped Inductive Test Circuit 

**==> picture [163 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>— tp<br>IAS<br>**----- End of picture text -----**<br>


**==> picture [209 x 459] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>175 TJ = 125°C<br>Hf} | e<br>150<br>RS<br>125<br>100 TJ = 25°C<br>CT<br>75 S e<br>Vgs = 10V<br>P E<br>50 tTeee<br>0 5 10 15 20<br>ID, Drain Current (A)<br>Fig 13.    On-Resistance vs. Drain Current<br>150<br>ID<br>TOP         0.85A<br>125<br>1.04A<br>BOTTOM 8.4A<br>100<br>75<br>aR \URSRREEEEa<br>N G<br>50 SNOT<br>25<br>P L<br>0 PP SS<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance ( m<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

**Fig 15b.** Unclamped Inductive Waveforms 

**==> picture [119 x 59] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 16a.** Switching Time Test Circuit 

**==> picture [145 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
V<br>DS<br>90%<br>|<br>10%<br>V<br>GS<br>: , o.<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Switching Time Waveforms 

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5 

## IRF6785MTRPbF 

**==> picture [470 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>201 K S Vgs(th)<br>S m: i<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


## **Fig 17a.** Gate Charge Test Circuit 

**Fig 17b.** Gate Charge Waveform 

**==> picture [415 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + [$< P.W. Period —_— — D = —_—— Period<br>) [@]    •  Circuit Layout Considerations Jt V | GS=10V<br>| | -  •   GroundLow StrayPlane Inductance<br> •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [1] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>; 00 oy VDD<br>ms<br>•   Re-Applied<br>Re ) •   dv/dt controlledDriver same type byas RgD.U.T. Vpp** + Voltage Body Diode  Forward Drop<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test es<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 18.** 

## for HEXFET ® Power MOSFETs 

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6 

IRF6785MTRPbF 

## DirectFET Tl Substrate and PCB Layout, MZ Outline 

## (Medium Size Can, Z-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

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7 

## IRF6785MTRPbF ™ DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

|J|J|J|J|J|J|J|J|J|J|J|J|
|---|---|---|---|---|---|---|---|---|---|---|---|
|MAX<br>0.250<br>MAX<br>0.246<br>IMPERIAL<br>CODE<br>A<br>MAX<br>6.35<br>MIN<br>6.25<br>METRIC<br>DIMENSIONS<br>|<br>b=||||||||||||
|||||B|4.80||||5.05|0.189|0.201|
|||||C|3.85||||3.95|0.152|0.156|
|||||D|0.35||||0.45|0.014|0.018|
|||||E|0.68||||0.72|0.027|0.028|
|||||F|0.68||||0.72|0.027|0.028|
|||||G|0.93||||0.97|0.037|0.038|
|||||H|0.63||||0.67|0.025|0.026|
|||||J|0.28||||0.32|0.011|0.013|
|||||K|1.13||||1.26|0.044|0.050|
|||||L|2.53||||2.66|0.100|0.105|
|||||M|0.616||||0.676|0.0235|0.0274|
|||||R|0.020||||0.080|0.0008|0.0031|
|||||P|0.08||||0.17|0.003|0.007|



## GATE MARKING 

## LOGO 

## PART NUMBER 

## BATCH NUMBER 

## DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

www.irf.com 

8 

## IRF6785MTRPbF 

## DirectFET Tl Tape & Reel Dimension (Showing component orientation). 

LOADED TAPE FEED DIRECTION 

**==> picture [215 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>NOTE: CONTROLLING<br>CODE  MIN  MAX  MIN  MAX<br>DIMENSIONS IN MM<br> A a  7.90  8.10 0.311 0.319<br> B  3.90  4.10 0.154 0.161<br> C ee 11.90 12.30 0.469 0.484<br> D  5.45  5.55 0.215 0.219<br> E ee  5.10  5.30 0.201 0.209<br> F  6.50  6.70 0.256 0.264<br> G  1.50  N.C 0.059  N.C<br> H  1.50  1.60 0.059 0.063<br>**----- End of picture text -----**<br>


**==> picture [197 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6785TRPBF). For 1000 parts on 7"<br>reel, order   IRF6785TR1PBF<br>REEL DIMENSIONS<br>STANDARD OPTION  (QTY 4800) TR1 OPTION  (QTY 1000)<br>METRIC IMPERIAL METRIC IMPERIAL<br>ee CODE  MIN  MAX  MIN  MAX  MIN  MAX  MIN  MAX<br>  A 330.0  N.C 12.992  N.C 177.77 N.C 6.9 N.C<br>  B  20.2  N.C 0.795  N.C 19.06 N.C 0.75 N.C<br>ee   C  12.8  13.2 0.504 0.520 13.5 12.8 0.53 0.50<br>  D   1.5  N.C 0.059  N.C 1.5 N.C 0.059 N.C<br>  E 100.0  N.C 3.937  N.C 58.72 N.C 2.31 N.C<br>  F   N.C  18.4  N.C 0.724 N.C 13.50 N.C 0.53<br>  G  12.4  14.4 0.488 0.567 11.9 12.01 0.47 N.C<br>  H  11.9  15.4 0.469 0.606 11.9 12.01 0.47 N.C<br>-—~~—<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/07 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6785MTRPBF/power-mosfet-n-channel-200-v-19-a-01-ohm-directfet)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6785mtrpbf/mosfet-n-ch-200v-19a-directfet/dp/2839482RL)
---

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