# Power MOSFET, N Channel, 150 V, 28 A, 0.056 ohm, DirectFET MZ, Surface Mount

![Product image](https://novapart.co/image/farnell:2725895/)

**URL**: https://novapart.co/products/IRF6775MTRPBF/power-mosfet-n-channel-150-v-28-a-0056-ohm
**SKU**: IRF6775MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5730
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.04; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MZ |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 28A |
| Drain Source On State Resistance | 0.056ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725895/)

|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details<br>**Features**<br>•Latest MOSFET Silicon technology<br>•Key parameters optimized for Class-D audio amplifier<br>applications<br>•Low RDS(on)for improved efficiency<br>•Low Qgfor better THD and improved efficiency<br>•Low Qrrfor better THD and lower EMI<br>•Low package stray inductance for reduced ringing and lower EMI<br>•Can deliver up to 250W per channel into 4ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>RoHS compliant containing no lead or bromide<br>Lead-Free (Qualified up to 260°C Reflow)<br>°<br>~~LTT~~|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details<br>**Features**<br>•Latest MOSFET Silicon technology<br>•Key parameters optimized for Class-D audio amplifier<br>applications<br>•Low RDS(on)for improved efficiency<br>•Low Qgfor better THD and improved efficiency<br>•Low Qrrfor better THD and lower EMI<br>•Low package stray inductance for reduced ringing and lower EMI<br>•Can deliver up to 250W per channel into 4ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>RoHS compliant containing no lead or bromide<br>Lead-Free (Qualified up to 260°C Reflow)<br>°<br>~~LTT~~|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details<br>**Features**<br>•Latest MOSFET Silicon technology<br>•Key parameters optimized for Class-D audio amplifier<br>applications<br>•Low RDS(on)for improved efficiency<br>•Low Qgfor better THD and improved efficiency<br>•Low Qrrfor better THD and lower EMI<br>•Low package stray inductance for reduced ringing and lower EMI<br>•Can deliver up to 250W per channel into 4ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>RoHS compliant containing no lead or bromide<br>Lead-Free (Qualified up to 260°C Reflow)<br>°<br>~~LTT~~|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details<br>**Features**<br>•Latest MOSFET Silicon technology<br>•Key parameters optimized for Class-D audio amplifier<br>applications<br>•Low RDS(on)for improved efficiency<br>•Low Qgfor better THD and improved efficiency<br>•Low Qrrfor better THD and lower EMI<br>•Low package stray inductance for reduced ringing and lower EMI<br>•Can deliver up to 250W per channel into 4ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>RoHS compliant containing no lead or bromide<br>Lead-Free (Qualified up to 260°C Reflow)<br>°<br>~~LTT~~|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details<br>**Features**<br>•Latest MOSFET Silicon technology<br>•Key parameters optimized for Class-D audio amplifier<br>applications<br>•Low RDS(on)for improved efficiency<br>•Low Qgfor better THD and improved efficiency<br>•Low Qrrfor better THD and lower EMI<br>•Low package stray inductance for reduced ringing and lower EMI<br>•Can deliver up to 250W per channel into 4ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>RoHS compliant containing no lead or bromide<br>Lead-Free (Qualified up to 260°C Reflow)<br>°<br>~~LTT~~|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details<br>**Features**<br>•Latest MOSFET Silicon technology<br>•Key parameters optimized for Class-D audio amplifier<br>applications<br>•Low RDS(on)for improved efficiency<br>•Low Qgfor better THD and improved efficiency<br>•Low Qrrfor better THD and lower EMI<br>•Low package stray inductance for reduced ringing and lower EMI<br>•Can deliver up to 250W per channel into 4ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>RoHS compliant containing no lead or bromide<br>Lead-Free (Qualified up to 260°C Reflow)<br>°<br>~~LTT~~|Applicable DirectFET Outline and  Substrate Outline(seep. 6, 7 for details<br>**Features**<br>•Latest MOSFET Silicon technology<br>•Key parameters optimized for Class-D audio amplifier<br>applications<br>•Low RDS(on)for improved efficiency<br>•Low Qgfor better THD and improved efficiency<br>•Low Qrrfor better THD and lower EMI<br>•Low package stray inductance for reduced ringing and lower EMI<br>•Can deliver up to 250W per channel into 4ΩLoad in<br>Half-Bridge Configuration Amplifier<br>•Dual sided cooling compatible<br>Compatible with existing surface mount technologies<br>RoHS compliant containing no lead or bromide<br>Lead-Free (Qualified up to 260°C Reflow)<br>°<br>~~LTT~~|**Key Parameters**|**Key Parameters**|**Key Parameters**|**Key Parameters**|**Key Parameters**|**Key Parameters**|**Key Parameters**|**Key Parameters**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||VDS||||150|||V|
||||||||RDS(on)typ. @ VGS= 10V||||47<br>~~en~~|||m<br>~~en~~|
||||||||DS(on)<br>Qgtyp.||||25.0<br>~~en~~<br>~~FT~~|||nC<br>~~en~~<br>~~FT~~|
||||||||RG(int)max.||||3.0<br>~~FT~~<br>~~|~~|||~~FT~~<br>~~|~~|
||||||||. 6, 7 for details)<br>DirectFET<br>~~|~~<br>~~a~~<br>MZ<br>~~eT~~|||||~~|~~|||
|||||||||||DirectFET||DirectFET<br>ISOMETRIC<br>™|||
|||||||||||||~~eT~~|||
|SQ<br>~~LTT~~|SX<br>~~LTT~~|ST<br>~~LTT~~|SH<br>~~LTT~~|MQ<br>~~LTT~~|MX|MT||~~eT~~|~~eT~~|~~eT~~|||~~eT~~||
|||||||||MN<br>~~eT~~|**MZ**<br>~~eT~~||||||



This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest  processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. 

The IRF6775MPbF device utilizes DirectFET[TM] packaging technology.  DirectFET[TM] packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging.  Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.  The DirectFET[TM] package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.  The DirectFET[TM] package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratingsbsolute Maximum Ratingslute Maximum Ratingsute Maximum Ratingste Maximum Ratingse Maximum Ratings Maximum Ratingsaximum Ratingsximum Ratingsum Ratingsm Ratings**|**Absolute Maximum Ratingsbsolute Maximum Ratingslute Maximum Ratingsute Maximum Ratingste Maximum Ratingse Maximum Ratings Maximum Ratingsaximum Ratingsximum Ratingsum Ratingsm Ratingsatingstingsgs**|||
|---|---|---|---|
||**Parameter**|**Max.**|**Units**|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~ee~~|150<br>~~a~~<br>~~ee~~|V<br>~~ee~~<br>~~ae~~|
|VGS|Gate-to-Source Voltage<br>~~ee~~<br>~~———_———————~~|± 20<br>~~ee~~<br>~~———_———————~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~ee~~<br>~~oT~~<br>~~———_———————~~|28<br>~~ee~~<br>~~oT~~<br>~~———_———————~~|A<br>~~ee~~<br>~~ae~~|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V<br>~~———_———————~~|4.9<br>~~———_———————~~||
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V<br>~~I~~<br>~~———_———————~~|3.9<br>~~I~~<br>~~———_———————~~||
|IDM|Pulsed Drain Current<br>~~———_———————~~|39<br>~~———_———————~~||
|PD@TC= 25°C<br>~~a~~|Maximum Power Dissipation<br>~~———_———————~~<br>~~I~~<br>~~aa~~|89<br>~~———_——————— ~~<br>~~I~~<br>~~ne~~|W<br> ~~ae~~<br>~~ne~~|
|PD@TA= 25°C<br>~~a~~|Power Dissipation<br>~~aa~~|2.8<br>~~ne~~||
|PD@TA= 70°C<br>~~a~~|Power Dissipation<br>~~aa~~|1.8<br>~~ne~~||
|EAS<br><br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~<br>~~a~~<br>~~a~~|33<br>~~ne~~<br>~~a~~<br>|mJ<br>~~ne~~<br>~~a~~<br>|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|5.6<br>|A<br>|
|~~a~~|Linear Derating Factor<br>~~aI~~|0.022<br>~~I~~|W/°C<br>~~I~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-40  to + 150|°C|



**�������������** 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|150|–––|–––|V|VGS= 0V, ID= 250μA|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp. Coefficient|–––|0.17|–––|V/°C|Reference to 25°C, ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|47|56|mΩ|VGS= 10V, ID= 5.6A�|
|VGS(th)|Gate Threshold Voltage|3.0|–––|5.0|V|VDS= VGS, ID= 100μA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|μA|VDS= 150V, VGS= 0V|
|||–––|–––|250||VDS= 120V, VGS= 0V, TJ= 125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|RG(int)|Internal Gate Resistance|–––|–––|3.0|Ω||



## **Dynamic @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|gfs|Forward Transconductance|11|–––|–––|S|VDS= 50V, ID= 5.6A|
|Qg|Total Gate Charge|–––|25|36|nC|VDS= 75V<br>VGS= 10V<br>ID= 5.6A<br>See Fig. 6 and 17|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|5.8|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|1.4|–––|||
|Qgd|Gate-to-Drain Charge|–––|6.6|–––|||
|Qgodr|Gate Charge Overdrive|–––|11|–––|||
|Qsw|Switch Charge(Qgs2+ Qgd)|–––|8.0|–––|||
|td(on)|Turn-On DelayTime|–––|5.9|–––|ns|VDD= 75V<br>ID= 5.6A<br>RG= 6.0Ω<br>VGS= 10V�|
|tr|Rise Time|–––|7.8|–––|||
|td(off)|Turn-Off DelayTime|–––|5.8|–––|||
|tf|Fall Time|–––|15|–––|||
|Ciss|Input Capacitance|–––|1411|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance|–––|193|–––|||
|Crss|Reverse Transfer Capacitance|–––|40|–––|||
|Coss|Output Capacitance|–––|1557|–––||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|
|Coss|Output Capacitance|–––|93|–––||VGS= 0V,  VDS= 120V,ƒ= 1.0MHz|
|Cosseff.|Effective Output Capacitance|–––|175|–––||VGS= 0V, VDS= 0V to 120V�|



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|28|A|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM|Pulsed Source Current<br>(BodyDiode)��|–––|–––|39|||
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C,IS= 5.6A,VGS= 0V�|
|trr|Reverse RecoveryTime|–––|62|–––|ns|TJ= 25°C, IF= 5.6A, VDD= 25V<br>di/dt = 100A/μs�|
|Qrr|Reverse RecoveryCharge|–––|164|–––|nC||



## **������** 

- Repetitive rating;  pulse width limited by 

- max. junction temperature. 

- Starting TJ = 25°C, L = 0.53mH, RG = 25 Ω , IAS = 11.2A. 

- Surface mounted on 1 in. square Cu board. 

- Pulse width ≤ 400μs; duty cycle ≤ 2%. 

- Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Used double sided cooling , mounting pad with large heatsink. 

- Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

- TC measured with thermal couple mounted to top (Drain) of part. 

- R θ is measured at TJ of approximately 90°C. 

�� ����������� ��������������������������������� �������������������������� ������������������� 

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**----- Start of picture text -----**<br>
100<br>VGS<br>TOP           15V<br>10V<br>9.0V<br>8.0V<br>7.0V<br>6.5V<br>6.0V<br>BOTTOM 5.5V<br>PTZ<br>10<br>5.5V<br>ZY:on aT ≤  60μs PULSE WIDTH |<br>Tj = 25°C<br>Ain<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100<br>VDS = 25V<br>≤  60μs PULSE WIDTH<br>10<br>faeney 67ee<br>See eae<br>1<br>Seer or) sane<br>T = 150°C<br>J<br>0.1 T = 25°C<br>J<br>T = -40°C<br>J<br>a= ee eee<br>0.01 7<br>3.0 4.0 5.0 6.0 7.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>10000 PH Coss  = Cds + Cgd<br>SS<br>FLEE<br>Ciss<br>1000 Tl<br>Coss<br>100<br>Crss<br>PPI ECE<br>10<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           15V<br>10V<br>9.0V<br>8.0V<br>7.0V<br>6.5V<br>6.0V<br>BOTTOM 5.5V<br>fT lil<br>10<br>5.5V<br>>All ≤  60μs PULSE WIDTH<br>Tj = 150°C<br>1 ANa |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.5<br>ID = 5.6A<br>V GS  = 10V<br>2.0<br>A<br>HLA<br>1.5<br>Saeeeee,aan<br>1.0<br>pz<br>ATE<br>0.5 ELL LLL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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**----- Start of picture text -----**<br>
20<br>I D = 5.6A<br>VDS= 120V<br>16 VDS= 75V Lt<br>VDS= 30V<br>a<br>12 4<br>rT 66h|lclcCULY<br>8<br>4<br>0 eeee<br>0 10 20 30 40<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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**----- Start of picture text -----**<br>
100 100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Pf of Perit ssaies 100 | μsec AST rr<br>10 10<br>ee CTA CU<br>1msec<br>PY T = 150°C PNM CEI«UII<br>J  DC<br>1 TJ = 25°C 1<br>T = -40°C<br>J<br>Tc = 25°C<br>Tj = 150°C 10msec<br>VGS = 0V Single Pulse<br>0.1 +ee oe == 0.1 byaHME EslIUIC E |ECUUTE<br>0.0 0.5 1.0 1.5 0.1 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage Fig 8.   Maximum Safe Operating Area<br>30 5.0<br>25 4.5 I D  = 100μA<br>ID = 250μA<br>20 SSGRRREEEE 4.0 HSH]<br>Pesto PASSE<br>15 3.5<br>TP PN PN BERERSNGE<br>10 BRRRREERNG 3.0 BREEN<br>5 EL ELEL TERN 2.5 TELL LLLN<br>0 2.0<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TC , CaseTemperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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30<br>25<br>20 SSGRRREEEE<br>Pesto<br>15<br>TP PN PN<br>10 BRRRREERNG<br>5 EL ELEL TERN<br>0<br>25 50 75 100 125 150<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

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100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 ST eee 0.02<br>0.1 | 0.01  no τ J τ J τ 1 τ 1 R 1 R1 τ 2 τ R2 2 R2 R τ 3 3 R τ 33 τ R4 τ 4R4 4 τ A τ A Ri 1.2801      0.000322 8.7256      0.164798 21.750       2.25760(°C/W) τ i (sec)<br>a a 7 ob | Ci= Ci= τ i /τ Rii / Ri ee 13.251      69 |<br>SINGLE PULSE<br>0.01<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>PEE CTE CC CT EF 2. Peak Tj = P dm x Zthja + Tc Ml<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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100<br>140<br>ID = 5.6A VGS = 10V<br>90<br>120 TTT jp<br>T = 125°C<br>J<br>80<br>100<br>fot TJ = 125°C 70 RE<br>80<br>60<br>60 /Pp ae TTT T = 25°C<br>50 J<br>PRT TT TJ = 25°C Pt<br>40 JNA [—<br>40<br>4 6 8 10 12 14 16<br>0 5 10 15 20<br>VGS, Gate-to-Source Voltage (V) ID , Drain Current (A)<br>   On-Resistance vs. Gate Voltage Fig 13.    On-Resistance vs. Drain Current<br>15V 140<br>                 I D<br>120 , | TOP         1.1A<br>VDS L DRIVER                1.4A<br>100 BOTTOM    11A<br>\ [|]<br>RG D.U.T +- [V][DD] 80 VE<br>IAS A<br>2V0VGS<br> Unclamped Inductive Test Circuittp 0.01 Ω 6040 Nee<br>20<br>V(BR)DSS(BR)DSS S|<br><> tp 0 | | |<br>25 50 75 100 125 150<br>/ Starting TJ, Junction Temperature (°C)<br>) Ω<br>RDS (on) , Drain-to-Source On Resistance (m<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 15a.** 

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**----- Start of picture text -----**<br>
V(BR)DSS(BR)DSS<br><> tp<br>/<br>y |<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

**Fig 15b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 16a.** Switching Time Test Circuit 

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V<br>DS<br>90%<br>10% va<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Switching Time Waveforms 

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L<br>VCC<br>DUT<br>0<br>201 K S<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


## **Fig 17a.** Gate Charge Test Circuit 

## **Fig 17b.** Gate Charge Waveform 

**==> picture [415 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations )Tfi VGS x =10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ° + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>. 00 - VDD<br>ay<br>•   Re-Applied<br>Re ) •   dvidt controlledDriver same typebyas ReD.U.T. Vo**p + Voltage Body Diode  Forward Drop<br>•   Isp controlled by Duty Factor "D" - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


**Fig 18.** 

for HEXFET Power MOSFETs 

## DirectFET **™** Substrate and PCB Layout, MZ Outline ( Medium Size Can, Z-Designation ). 

Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. 

|METRIC<br>~~PO~~<br>~~ee~~<br>~~eeee~~|METRIC<br>~~PO~~<br>~~ee~~<br>~~eeee~~|IMPERIAL<br>~~PO~~<br>~~ee~~<br>~~eeeeee~~|IMPERIAL<br>~~PO~~<br>~~ee~~<br>~~eeeeee~~|
|---|---|---|---|
|MIN<br>~~ee~~<br>~~ee~~|MAX<br>~~ee~~<br>~~ee~~|MAX<br>~~ee~~<br>~~eeee~~|MAX<br>~~ee~~<br>~~ee~~|
|MIN<br>6.25<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|MAX<br>6.35<br> ~~ee~~<br>~~ee~~<br>~~ee~~|MAX<br>0.246<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|MAX<br>0.250<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|4.80<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|5.05<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.189<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.201<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|3.85<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|3.95<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.152<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.156<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.35<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.45<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.014<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.018<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.68<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.72<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.027<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.028<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.68<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.72<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.027<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.028<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.93<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.97<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.037<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.038<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.63<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.67<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.025<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.026<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.28<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.32<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.011<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.013<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|1.13<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|1.26<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.044<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.050<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|2.53<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|2.66<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.100<br>~~ee ee ~~<br>~~eeee~~<br>~~eeee~~|0.105<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|0.616<br> ~~ee ~~<br>~~ee~~|0.676<br> ~~ee~~<br>~~ee~~|0.0235<br>~~ee ee ~~<br>~~eeee~~|0.0274<br> ~~ee~~<br>~~ee~~|
|0.020<br> ~~ee ~~|0.080<br> ~~ee~~|0.0008<br>~~ee ee ~~|0.0031<br> ~~ee~~|
|0.08|0.17|0.003|0.007|



GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7" reel, order   IRF6775TR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6775TRPBF). For 1000 parts on 7"<br>reel, order   IRF6775TR1PBF|
|---|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>ed||||||||
|STANDARD OPTION**(QTY 4800)**<br>a||||TR1 OPTION**(QTY 1000)**<br>||||
||METRIC<br>||IMPERIAL<br>(|METRIC<br>(||IMPERIAL<br>(||
|MIN<br>CODE<br>~~a~~|MIN|MAX<br>MIN|MIN<br>MAX|MAX<br>MIN|MIN<br>MAX|MIN<br>MAX|MAX|
|MIN<br>CODE<br>~~a~~<br><br>~~es~~|MIN<br>~~ee~~<br>|MAX<br>MIN<br>~~ee~~<br>|MIN<br>MAX<br>~~ee~~<br>|MAX<br>MIN<br>~~ee~~<br>|MIN<br>MAX|MIN<br>MAX|MAX|
|330.0<br>A<br>~~a~~<br>~~a~~<br>~~esee~~<br>~~a~~|330.0<br>~~ee~~<br>~~ee~~<br>|N.C<br>12.992<br>~~ee~~<br>~~ee~~<br>|12.992<br>N.C<br>177.77<br>~~ee~~<br>~~ee~~<br>|N.C<br>177.77<br>~~ee~~<br>~~es~~<br>|6.9<br>N.C|6.9<br>N.C|N.C|
|20.2<br>B<br>~~a ~~<br>~~esee~~<br>~~a~~<br>~~es~~|20.2<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|N.C<br>0.795<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|0.795<br>N.C<br>19.06<br>~~ee~~<br>~~ee~~<br>~~ee~~|N.C<br>19.06<br>~~ee~~<br>~~es~~<br>~~ee~~|0.75<br>N.C|0.75<br>N.C|N.C|
|12.8<br>C<br> <br>~~esee~~<br>~~a~~<br>~~es~~<br>~~a~~|12.8<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|13.2<br>0.504<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|0.504<br>0.520<br>13.5<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|12.<br>13.5<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>|0.53<br>12.8<br>|0.53<br>0.50<br>|0.50<br>|
|1.5<br>D<br>~~ee~~<br>~~a ~~<br>~~es~~<br>~~a~~<br>~~es~~|1.5<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|N.C<br>0.059<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|0.059<br>N.C<br>1.5<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~eeee~~<br>|N.<br>1.5<br> ~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|0.059<br>N.C<br>~~ee~~|0.059<br>N.C<br>~~ee~~|N.C<br>~~ee~~|
|100.0<br>E<br> <br>~~es ~~<br>~~a~~<br>~~esee~~<br>~~es~~|100.0<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|N.C<br>3.937<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|3.937<br>N.C<br> ~~ee ~~<br>~~ee~~<br>~~eeee~~<br>~~ee ee~~<br>|N.C<br>58.72<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|2.31<br>N.C<br>~~ee~~|2.31<br>N.C<br>~~ee~~|N.C<br>~~ee~~|
|N.C<br>F<br> <br>~~a ~~<br>~~esee~~<br>~~es~~~~**e**~~<br>~~a~~|N.C<br> ~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~**e**~~|18.4<br>N.C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**e**e~~|N.C<br>0.724<br>~~ee ~~<br>~~eeee~~<br>~~ee ee~~<br>~~e~~|1<br>N.C<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|N.C<br>13.50<br>~~ee~~|N.C<br>0.53<br>~~ee~~|0.53<br>~~ee~~|
|12.4<br>G<br>~~ee~~<br>~~es~~~~**e**~~<br>~~a~~|12.4<br>~~ee~~<br>~~**e**~~|14.4<br>0.488<br>~~ee~~<br>~~**e**e~~|0.488<br>0.567<br>11.9<br>~~ee ee~~<br>~~e~~|12.<br>11.9<br>~~ee~~<br>~~es~~|0.47<br>12.01|0.47<br>N.C|N.C|
|11.9<br>H<br>~~**e**~~<br>~~a~~|11.9<br>~~**e**~~|15.4<br>0.469<br>~~**e**e~~<br>~~s~~|0.469<br>0.606<br>11.9<br>~~e ~~<br>~~s~~|12.01<br>11.9<br> ~~es~~|0.47<br>12.01|0.47<br>N.C|N.C|



## LOADED TAPE FEED DIRECTION 

**==> picture [210 x 97] intentionally omitted <==**

**----- Start of picture text -----**<br>
PT DIMENSIONS<br>METRIC IMPERIAL<br>NOTE: CONTROLLING  ee ee<br>DIMENSIONS IN MM a CODE  ee  MIN  MAX  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br>ee ee ee ee<br>a  B  ee  3.90  4.10 0.154 0.161<br> C 11.90 12.30 0.469 0.484<br>ee ee<br> D  5.45  5.55 0.215 0.219<br>ee ee ee ee<br>a  E  ee  5.10 ee  5.30 ee 0.201 ee 0.209<br> F  6.50  6.70 0.256 0.264<br>ee ee<br>a  G  ee  1.50 ee  N.C ee 0.059 ee  N.C<br>a  H  ee  1.50  1.60 0.059 eeee 0.063<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

|**Revision History**|**Revision History**|
|---|---|
|**Date**<br>**Revision History**|**Comments**|
|2/26/2014|•Updated SOA curve figure 8 to extend x axis to 150V because this device is 150V, on page 4.<br>• Updated datasheet with new IR corporate template.|



Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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---

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