# Power MOSFET, N Channel, 30 V, 180 A, 1700 µohm, DirectFET MX, Surface Mount

![Product image](https://novapart.co/image/farnell:2579991RL/)

**URL**: https://novapart.co/products/IRF6727MTRPBF/power-mosfet-n-channel-30-v-180-a-1700-ohm
**SKU**: IRF6727MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7810
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MX |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 180A |
| Drain Source On State Resistance | 1700µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579991RL/)

## IRF6727MPbF 

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TAR Rectifier IRF6727MTRPbF<br>DirectFET Power MOSFET<br>° RoHS Compliant and Halogen Free  © Typlal values (unless othmice specie)<br>Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on)<br>30V max ±20V max 1.22mΩ@ 10V 1.84mΩ@ 4.5V<br>Dual Sided Cooling Compatible<br>Ultra Low Package Inductance Qg  tot Qgd   Qgs2   Qrr   Qoss   Vgs(th)<br>Optimized for High Frequency Switching  49nC 16nC 5.3nC 45nC 28nC 1.8V<br>Ideal for CPU Core DC-DC Converters<br>. Optimized for both Sync.FET and some Control FET » EAR|EE<br>    application<br>Low Conduction and Switching Losses<br>e Compatible with existing Surface Mount Techniques  ® =~<br>° 100% Rg tested DirectFET ™  ISOMETRIC<br>MX<br>Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) 0)<br>SQ SX ST MQ MX MT MP<br>|<br>Description<br>**----- End of picture text -----**<br>


The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6727MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6727MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge  to minimize losses . 

## **Absolute Maximum Ratings** 

||**Parameter**<br>**Units**<br>**Max.**|
|---|---|
|VDS<br>VGS<br>ID @TA= 25°C<br>ID @TA= 70°C<br>ID @TC= 25°C<br>IDM<br>EAS<br>IAR|Drain-to-Source Voltage<br>V<br>Gate-to-Source Voltage<br>Continuous Drain Current,VGS@ 10V<br>Continuous Drain Current,VGS@ 10V<br>A<br>Continuous Drain Current,VGS@ 10V<br>Pulsed DrainCurrent<br>Single Pulse Avalanche Energy<br>mJ<br>AvalancheCurrent<br>A<br>25<br>26<br>180<br>260<br>±20<br>30<br>32<br>250<br>~~PoNN~~<br>~~—~~<br>~~ee~~<br>~~>~~<br>~~DO~~<br>~~ek~~<br>~~>~~<br>~~PO~~|



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4<br>ID = 32A<br>3<br>{| |<br>2<br>PN | TJ = 125°C tf<br>Nn<br>1<br>See T = 25°C<br>J<br>0 |,<br>0 5 10 15 20<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 1.    Typical On-Resistance vs. Gate Voltage<br>)Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


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5.0<br>ID= 25A VDS= 24V<br>4.0<br>VDS= 15V<br>3.0 a S ee<br>i ipewan ae<br>2.0<br>fA | | | |<br>1.0<br>C ALLE<br>0.0 YALE<br>0 5 10 15 20 25 30 35 40 45 50 55<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical  Total Gate Charge vs. Gate-to-Source Voltage 

0) Click on this section to link to the appropriate technical paper. ® TC measured with thermocouple mounted to top (Drain) of part. @© Click on this section to link to the DirectFET Website. Repetitive rating;  pulse width limited by max. junction temperature. © Surface mounted on 1 in. square Cu board, steady state.[©] Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 25A. 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|~~Pp~~|**Parameter**<br>~~Pp~~|**Min.**<br>|**Typ.**<br>|**Max. **<br>|**Units**<br>|**Conditions**<br>|
|---|---|---|---|---|---|---|
|BVDSS<br>~~Pp~~|Drain-to-Source Breakdown Voltage<br>~~Pprrr—“(—éis‘“‘“‘“‘i‘i~~|30<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~|–––<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QD~~|–––<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QD~~|V<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~|
|∆ΒVDSS/∆TJ<br>~~Pp~~|Breakdown Voltage Temp. Coefficient<br>~~Pprrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QO~~|–––<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QO~~|22<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QO~~<br>~~QD~~|–––<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QO~~<br>~~QD~~|mV/°C<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QO~~<br>~~QO~~|Reference to 25°C, ID= 1mA<br>~~rrr—“(—éis‘“‘“‘“‘i‘i~~<br>~~QO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~ee~~|1.22<br>~~QD~~<br>~~ee~~|1.7<br>~~QD~~<br>~~ee~~|mΩ<br>~~QO~~<br>~~ee~~|VGS= 10V, ID= 32A<br>~~ee~~|
|||–––<br>~~ee~~|1.84<br>~~ee~~<br>~~||~~|2.4<br>~~ee~~<br>~~||~~||VGS= 4.5V, ID= 25A<br>~~ee~~<br>@|
|VGS(th)|Gate Threshold Voltage<br>~~a~~|1.35<br>~~a~~|1.8<br>~~a~~|2.35<br>~~a~~|V<br>~~a~~|VDS= VGS, ID= 100µA<br>~~a~~<br>~~eee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~<br>~~eee~~|-6.5<br>~~a~~<br>~~es~~<br>~~eee~~|–––<br>~~a~~<br>~~es~~<br>~~ee~~|mV/°C<br>~~a~~<br>~~es~~<br>~~ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|1.0<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|VDS= 24V, VGS= 0V<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~<br>~~||~~|150<br>~~ee~~<br>~~ee~~<br>~~||~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|–––<br>~~eee ~~<br>~~ee~~|100<br> ~~ee~~<br>~~ee~~|nA<br>~~ee ~~<br>~~ee~~<br>~~QQ~~|VGS= 20V<br> ~~eee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~PTT~~|–––<br>~~ee~~<br>~~PTT~~<br>~~QQ~~|-100<br>~~ee~~<br>~~PTT~~<br>~~QQ~~||VGS= -20V<br>~~ee~~|
|gfs|Forward Transconductance<br>~~Gs~~|160<br>~~Gs~~<br>~~ee~~|–––<br>~~Gs~~<br>~~QQ~~|–––<br>~~Gs~~<br>~~QQ~~|S<br>~~Gs~~<br>~~QQ~~|VDS= 15V, ID= 25A<br>~~Gs~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|49<br>~~QQ~~<br>~~es~~|74<br>~~QQ~~<br>~~es~~|nC<br>~~QQ~~|See Fig. 15<br>VGS= 4.5V<br>ID= 25A<br>VDS= 15V|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|5.3<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|16<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~<br>~~ee~~|16<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qsw|Switch Charge(Qgs2+ Qgd)<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|21.3<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qoss|Output Charge<br>~~a~~<br>~~es~~|–––<br>~~Gs~~<br>|28<br>~~QO~~<br>~~QO~~<br>|–––<br>~~QO~~<br>~~QO~~|nC<br>~~QO~~<br>~~QO~~|VDS= 16V, VGS= 0V|
|RG|Gate Resistance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~Gs~~<br>|1.5<br>~~es~~<br>~~QO~~<br>|2.5<br>~~es~~<br>~~QO~~|Ω<br>~~es~~<br>~~QO~~|~~es~~|
|td(on)|Turn-On DelayTime<br>~~es ~~|–––<br>~~Gs~~<br> ~~ee~~|21<br>~~QO~~<br>~~ee~~|–––<br>~~QO~~|ns<br> ~~QO~~|ID= 25A<br>VDD= 15V, VGS= 4.5V<br>RG= 1.8Ω<br>See Fig. 17<br>a|
|tr|Rise Time<br>~~es ~~<br>~~ee~~|–––<br>~~Gs ~~<br> <br>~~ee~~<br>~~ee~~|31<br> ~~QO~~<br><br>~~ee~~<br>~~ee~~|–––<br>~~QO ~~<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~ee~~|24<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~|16<br>~~ee~~<br>~~a~~|–––<br>~~a~~|||
|Ciss|Input Capacitance<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~<br>~~ee~~|6190<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|1280<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|610<br>~~es~~|–––<br>~~es~~|||



> Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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## **Absolute Maximum Ratings** 

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Parameter Max. Units<br>PD @TA = 25°C © Power Dissipation  2.8 W<br>PD @TA = 70°C © Power Dissipation  1.8<br>PD @TC = 25°C Power Dissipation  89<br>©<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -40  to + 150<br>TSTG es Storage Temperature Range<br>Thermal Resistance<br>Parameter Typ. Max. Units<br>RθJA  <n Junction-to-Ambient   ––– 45<br>RθJA  Junction-to-Ambient   12.5 –––<br>a<br>RθJA  ke Junction-to-Ambient   20 ––– °C/W<br>RθJC  Junction-to-Case  ––– 1.4<br>©<br>RθJ-PCB  a Junction-to-PCB Mounted 1.0 –––<br>Linear Derating Factor  0.022 W/°C<br>a © Se<br>100<br>D = 0.50 a easy mm Os | | |<br>10 a 0.20 a | sn — tt |<br>0.10<br>0.05<br>1 a LS 0.020.01 a oezeee ee τJ τ CL J eo R 1 R 1 R 2 R 2 R 3R 3 7 R 4R 4 τAτA Ri (°C/W)   1.1959       0.000163 τi (sec) HuHi<br>0.1 A ee an ee ee τ1 τ1 τ2 τ2 τ3 τ3 τ4 τ4 3.1186       0.009223 Hl<br>22.998       0.9465<br>Ci= τi/Ri<br>Ci= τi/Ri 17.704       41.2<br>A t ee eee<br>2 | ee eee ||<br>0.01 w ail SINGLE PULSE er ee Notes: ee ll<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>El ee ee 2. Peak Tj = P dm x Zthja + Tc mil<br>a ee ee lll Hill<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Used double sided cooling , mounting pad with large heatsink. ) Rθ is measured at TJ of approximately 90°C. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

©) Surface mounted on 1 in. square Cu (still air). 

© Mounted to a PCB with small clip heatsink (still air) 

©) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>100 4.5V3.5V<br>3.0V<br>2.7V<br>2.5V<br>10 BOTTOM 2.3V<br>1 _<br>Pt EE<br>0.1 2.3V<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 i meal<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>VDS = 15V<br>≤60µs PULSE WIDTH<br>100 =<br>+F s FS<br>T  = 150°C<br>J<br>10 TJ = 25°C KA II<br>T  = -40°C<br>J<br>a =<br>Py PAV |<br>1<br>0.1 | | J] fy | {|<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>ID, Drain-to-Source Current  (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


VGS, Gate-to-Source Voltage (V) 

**Fig 6.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>= Crss   = C gd<br>Coss   = Cds + Cgd<br>10000<br>rr Ciss<br>SSeaall Coss email<br>1000<br>a rith C all<br>rss<br>a OO 0<br>a ee<br>EI<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>3.5V<br>3.0V<br>2.7V<br>100 2.5V<br>BOTTOM 2.3V<br>a Me<br>10<br>po ep bp rnin<br>2.3V<br>≤60µs PULSE WIDTH<br>Tj = 150°C<br>1 |LH |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>2.0<br>ID = 32A<br>T TT<br>1.5 L T TTLL TTALE<br>UT<br>1.0 R enee denne<br>VGS = 10V<br>VGS = 4.5V<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>7<br>T = 25°C<br>Vgs = 3.5V  J<br>6 Vgs = 4.0V  a i<br>Vgs = 4.5V<br>5 Vgs = 5.0V<br>Vgs = 8.0V<br>4 Vgs = 10V  wT<br>3<br>AS |<br>2 P a “ANA AL<br>1 _ ———— ——_a<br>0 n e<br>0 50 100 150 200 250<br>ID, Drain Current (A)<br>)Ω<br>Typical RDS(on) (m<br>ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

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IGR 1000  R ec tifieree<br>100 TJ = 150°C<br>TJ = 25°C<br>TJ = -40°C<br>10<br>1<br>VGS = 0V<br>PE<br>0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, Source-to-Drain Voltage (V)<br>Fig 10.   Typical Source-Drain Diode Forward Voltage<br>200<br>180<br>=<br>160<br>140<br>e e<br>120<br>100<br>80<br>60<br>a<br>40 i ee<br>20<br>Aa ;<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

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1000 a<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100µsec<br>1msec<br>10<br>10msec<br>1<br>DC<br>0.1 T A = 25°C<br>T  = 150°C<br>J<br>Single Pulse<br>tH H S tt<br>0.01<br>0.01 0.10 1.00 10.00 100.00<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig11.** Maximum Safe Operating  Area 

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3.0<br>2.5 oP ooRO<br>2.0<br>1.5 ID = 100µA<br>ID = 150µA<br>ID = 250µA<br>1.0 ID = 1.0mA gzansnZ N<br>ID = 1.0A<br>0.5 TT TTT<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Typical VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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1000<br>ID<br>TOP      2.6A<br>800 3.7A<br>BOTTOM 25A<br>\<br>600<br>N EE<br>400<br>P SX<br>200<br>R S<br>LLPPSSLLNw |<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**Fig 15b.** Gate Charge Waveform 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>x 20V Jk<br>t 0.01Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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+<br>-<br>≤ 1<br>≤ 0.1 %<br>Buty<br>Factor<br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

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V(BR)DSS<br>+ tp -><br>fal<br>yt<br>/<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>VDS<br>90%<br>; —<br>|<br>10% /\ /\<br>VGS<br>oo<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T ——— Period D = —<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V ttx GS=10V<br> •<br>-  •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>® - 8 = Current Transformer - ® + Current r Current ™ di/dt /<br>00 ® D.U.T. VDS Waveform Diode Recoverydv/dt \ ><br>. VDD<br>•   Re-Applied<br>•   Driver same type as D.U.T. ** + Voltage Body Diode  Forward Drop<br>Re ( a4 •   dv/dt controlled by Rg Vpp - Inductor Curent a<br>•<br>D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @)<br>**----- End of picture text -----**<br>


## **Fig 18.** 

## for HEXFET ® Power MOSFETs 

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0.90 G = GATE<br>x4 D = DRAIN<br>0.75 S = SOURCE<br>1.45<br>x2<br>D D<br>7<br>S<br>:<br>G<br>Y VgZZ, Y 4<br>S<br>D ee D ra<br>Y 2<br>**----- End of picture text -----**<br>


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| PO DIMENSIONS aa METRIC IMPERIAL a CODE MIN MAX MIN MAX ee A 6.25 6.35 0.246 0.250 B 4.80 5.05 0.189 0.201 a ee ee ee eee ee C 3.85 3.95 0.152 0.156 ee D 0.35 0.45 0.014 0.018 ee E 0.68 0.72 0.027 0.028 ee F 0.68 0.72 0.027 0.028 ee G 1.38 1.42 0.054 0.056 H 0.80 0.84 0.032 0.033 a ee ee ee eee ee J 0.38 0.42 0.015 0.017 ee K 0.88 1.01 0.035 0.039 ee L 2.28 2.41 0.090 0.095 ee M 0.616 0.676 0.0235 0.0274 R 0.020 0.080 0.0008 0.0031 a ee ee ee eee a P 0.08 0.17 0.003 0.007 

## DirectFET ™ Part Marking 

## GATE MARKING 

## LOGO 

## PART NUMBER 

## BATCH NUMBER 

## DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

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## DirectFET Tape & Reel Dimension (Showing component orientation). 

**==> picture [202 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
tLe<br>NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6727MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6727MTR1PBF<br>REEL DIMENSIONS<br>STANDARD OPTION  (QTY 4800) TR1 OPTION  (QTY 1000)<br>METRIC IMPERIAL METRIC IMPERIAL<br>CODE  MIN  MAX  MIN  MAX  MIN  MAX  MIN  MAX<br>a   A 330.0  N.C 12.992  N.C 177.77 N.C 6.9 N.C<br>a   B  20.2  N.C 0.795  N.C 19.06 N.C 0.75 N.C<br>  C  12.8  13.2 0.504 0.520 13.5 12.8 0.53 0.50<br>a   D   1.5  N.C 0.059  N.C 1.5 N.C 0.059 N.C<br>  E 100.0  N.C 3.937  N.C 58.72 N.C 2.31 N.C<br>  F   N.C  18.4  N.C 0.724 N.C 13.50 N.C 0.53<br>=   G  12.4  14.4 0.488 0.567 11.9 12.01 0.47 N.C<br>  H  11.9  15.4 0.469 0.606 11.9 12.01 0.47 N.C<br>LOADED TAPE FEED DIRECTION<br>**----- End of picture text -----**<br>


PC DIMENSIONS METRIC IMPERIAL NOTE: CONTROLLING DIMENSIONS IN MM J CODE MIN MAX MIN MAX es A 7.90 8.10 0.311 0.319 B 3.90 4.10 0.154 0.161 J C 11.90 12.30 0.469 0.484 D 5.45 5.55 0.215 0.219 J E 5.10 5.30 0.201 0.209 F 6.50 6.70 0.256 0.264 G 1.50 N.C 0.059 N.C ——— H 1.50 1.60 0.059 0.063 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2009 

www.irf.com 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6727MTRPBF/power-mosfet-n-channel-30-v-180-a-1700-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6727mtrpbf/mosfet-n-ch-30v-180a-directfet/dp/2579991RL)
---

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