# Power MOSFET, N Channel, 25 V, 270 A, 500 µohm, DirectFET L6, Surface Mount

![Product image](https://novapart.co/image/farnell:2725894/)

**URL**: https://novapart.co/products/IRF6718L2TRPBF/power-mosfet-n-channel-25-v-270-a-500-ohm
**SKU**: IRF6718L2TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 13Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 83W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 500µohm |
| Transistor Case Style | DirectFET L6 |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 270A |
| Drain Source On State Resistance | 500µohm |
| Gate Source Threshold Voltage Max | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725894/)

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IRF6718L2TRPbF<br>TER Rectifier<br>IRF6718L2TR1PbF<br>DirectFET ® Power MOSFET  @<br>e RoHS Compliant Containing No Lead and Bromide  © Typical values (unless otherwise specified)<br>e Dual Sided Cooling Compatible  ® VDSS VGS RDS(on) RDS(on)<br>Ultra Low Package Inductance<br>25V max ±20V max 0.50m Ω @10V 1.0m Ω @4.5V<br>Optimized for Active O-Ring / Efuse ApplicationsVery Low RDS(ON) for Reduced Conduction Losses Qg  tot Qgd   Qgs2   Qrr   Qoss   Vgs(th)<br>64nC 20nC 9.4nC 67nC 50nC 1.9V<br>: Compatible with existing Surface Mount Techniques<br>9 SSS<br>DirectFET  ISOMETRIC<br>Applicable DirectFET Outline and  Substrate Outline  ®<br>S1 S2 SB M2  M4 L4 L6 L8<br>[L ~— Jy JT Jf JT T ae Tl<br>**----- End of picture text -----**<br>


## Applicable DirectFET Outline and  Substrate Outline 

## **Description** 

The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[®] packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-pak.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. 

The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications. 

## **Absolute Maximum Ratings** 

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a Parameter Max. Units<br>VDS Drain-to-Source Voltage 25 V<br>VGS aSS Gate-to-Source Voltage  ±20<br>ID @ TA = 25°C Continuous Drain Current, VGS @ 10V  61<br>ID @ TA = 70°C © Continuous Drain Current, VGS @ 10V  52 A<br>ID @ TC = 25°C PO Continuous Drain Current, VGS @ 10V  270<br>IDM rsPf Pulsed Drain Current  490<br>EAS a Single Pulse Avalanche Energy 530 mJ<br>IAR ©eG Avalanche Current 49 A<br>4 14.0<br>ID = 61A 12.0 I D = 49A<br>3 VDS= 20V<br>10.0<br>VDS= 13V<br>ee ee 8.0 ee<br>2<br>PNT | T = 125°C 6.0 Ct er<br>X J  Pf | | Le]<br>4.0<br>1<br>PN 227 Anne<br>T = 25°C 2.0<br>J<br>0 0.0<br>|, ZEEE<br>2 4 6 8 10 0 20 40 60 80 100 120 140 160 180<br> QG  Total Gate Charge (nC)<br>VGS, Gate -to -Source Voltage  (V)<br>) Ω<br>Typical RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

® Click on this section to link to the appropriate technical paper. 2) TC measured with thermocouple mounted to top (Drain) of part. @© Click on this section to link to the DirectFET Website. Repetitive rating;  pulse width limited by max. junction temperature. @ Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.44mH, RG = 25 Ω , IAS = 49A. 

www.irf.com 

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07/27/11 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~ee~~<br>~~a~~|**Min.**<br>~~ee~~<br>~~nD~~|**Typ.**<br>~~ee~~<br>~~Qe~~<br>|**Max. **<br>~~ee~~<br>~~QQ~~<br>~~GO~~|**Units**<br>~~ee~~<br>~~QQ~~<br>~~GO~~|**Conditions**<br>~~ee~~<br>~~GO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~rd~~<br>~~a~~|25<br>~~rd~~<br>~~nD~~<br>~~Gs~~|–––<br>~~Qe ~~<br>~~rd~~<br><br>~~sO~~|–––<br> ~~QQ~~<br>~~rd~~<br>~~GO~~<br>~~sO~~|V<br>~~QQ~~<br>~~rd~~<br>~~GO~~<br>~~G~~|VGS= 0V, ID= 250μA<br>~~rd~~<br>~~GO~~|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient<br>~~a~~|–––<br>~~nD~~<br>~~Gs~~|11<br><br>~~sO~~|–––<br>~~GO~~<br>~~sO~~|mV/°C<br>~~GO~~<br>~~G~~|Reference to 25°C, ID= 1mA<br>~~GO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~——~~|–––<br>~~nD ~~<br>~~Gs ~~<br>~~——~~|0.50<br> <br> ~~sO~~<br>~~——~~|0.70<br> ~~GO~~<br>~~sO ~~<br>~~——~~|mΩ<br>~~GO~~<br> ~~G~~<br>~~——~~|VGS= 10V, ID= 61A<br>~~GO~~<br>~~——~~|
|||–––<br>~~——~~|1.0<br>~~——~~<br>~~FT~~|1.4<br>~~——~~<br>~~FT~~||VGS= 4.5V, ID= 49A<br>~~——~~|
|VGS(th)|Gate Threshold Voltage<br>~~——~~|1.35<br>~~——~~<br>~~es~~|1.90<br>~~——~~<br>~~FT~~<br>~~es~~|2.35<br>~~——~~<br>~~FT~~<br>~~es~~|V<br>~~——~~|VDS= VGS, ID= 150μA<br>~~——~~<br>~~|],~~<br>|
|ΔVGS(th)/ΔTJ|Gate Threshold Voltage Coefficient<br>~~a~~|–––<br>~~a~~<br>~~es~~|-7.6<br>~~a~~<br>~~es~~<br>~~Ft~~|–––<br>~~a~~<br>~~es~~<br>~~Ft~~|mV/°C<br>~~a~~<br>||
|IDSS|Drain-to-Source Leakage Current<br>~~EE~~<br>~~SS~~|–––<br>~~es~~<br>~~EE~~|–––<br>~~es ~~<br>~~EE~~<br>~~Ft~~|1.0<br> ~~es~~<br>~~EE~~<br>~~Ft~~|μA<br>~~EE~~<br>|VDS= 20V, VGS= 0V<br>~~EE~~<br>~~|],~~<br>|
|||–––<br>~~EE~~<br>~~SS~~|–––<br>~~EE~~<br>~~Ft~~|150<br>~~EE~~<br>~~Ft ~~||VDS= 20V, VGS= 0V, TJ= 125°C<br>~~EE~~<br>~~|],~~<br> ~~Po~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~SS~~|–––<br>~~SS~~|–––<br>~~Ft~~|100<br>~~Ft ~~|nA<br> <br> <br>~~GQ~~|VGS= 20V<br>~~|],~~<br> <br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~SS~~<br>~~a~~|–––<br>~~SS~~<br>~~ee~~<br>~~Gs~~|–––<br>~~ee~~<br>~~GQ~~|-100<br>~~ee ~~<br>~~GQ~~||VGS= -20V<br>~~ee~~<br> ~~Po~~|
|gfs|Forward Transconductance<br>~~SS~~<br>~~a~~|820<br>~~SS~~<br>~~Gs~~|–––<br>~~GQ~~|–––<br>~~GQ~~|S<br>~~GQ~~|VDS= 13V, ID= 49A<br>~~ee~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~es~~|–––<br>~~Gs ~~<br>~~es~~<br>~~es~~|64<br> ~~GQ~~<br>~~es~~|96<br>~~GQ~~<br>~~es~~|nC<br>~~GQ~~<br>~~GQ~~|See Fig. 18<br>VGS= 4.5V<br>ID= 49A<br>VDS= 13V|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|18<br>~~es~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|9.4<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|20<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|16.6<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qsw|Switch Charge(Qgs2+ Qgd)<br>~~es~~<br>~~a~~|–––<br>~~es ~~<br>~~es~~<br>~~Gs~~|29.4<br> ~~ee~~<br>~~es~~<br>~~GQ~~|–––<br>~~es~~<br>~~GQ~~|||
|Qoss|Output Charge<br>~~a~~<br>~~es~~|–––<br>~~Gs~~<br>|50<br>~~GQ~~|–––<br>~~GQ~~<br>~~GO~~|nC<br>~~GQ~~<br>~~GO~~|VDS= 16V, VGS= 0V<br>~~GO~~|
|RG|Gate Resistance<br>~~a~~<br>~~(ss~~<br>~~es~~|–––<br>~~Gs ~~<br>~~(ss~~<br>~~es~~|0.90<br> ~~GQ~~<br>~~(ss~~|–––<br>~~GQ~~<br>~~(ss~~<br>~~GO~~|Ω<br>~~GQ~~<br>~~(ss~~<br>~~GO~~|~~(ss~~<br>~~GO~~<br>@|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~<br>~~es~~|67<br>~~es~~|–––<br>~~GO~~|ns<br> ~~GO~~|ID= 49A<br>VDD= 13V, VGS= 4.5V<br>RG= 6.8Ω<br>~~GO~~<br>@|
|tr|Rise Time<br>~~es ~~<br>~~a~~|–––<br> ~~es~~<br>~~a~~<br>~~es~~|140<br>~~a~~<br>~~es~~|–––<br>~~GO ~~<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|47<br> ~~es~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~es~~|53<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|8910<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 13V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|2310<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~es~~<br>~~a~~<br>~~es~~|1115<br>~~a~~<br>~~es~~|–––<br>~~a~~|||



> Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. 

www.irf.com 

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## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>**Parameter**<br>**Units**<br>PD@TA =25°C<br>Power Dissipation<br>W<br>PD @TA= 70°C<br>Power Dissipation<br>PD@TC =25°C<br>Power Dissipation<br>TP<br>PeakSolderingTemperature<br>°C<br>TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range<br>270<br>-55  to + 175<br>**Max.**<br>83<br>4.3<br>3.0<br> ~~a~~<br>~~Q~~<br>~~<n~~<br>~~ee~~<br>~~>ee~~|
|---|
|**Thermal Resistance**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJA<br>Junction-to-Ambient<br>–––<br>35<br>RθJA<br>Junction-to-Ambient<br>12.5<br>–––<br>RθJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W<br>RθJC<br>Junction-to-Case<br>–––<br>1.8<br>RθJ-PCB<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>Linear DeratingFactor<br>W/°C<br>0.029<br>~~©~~<br>~~a~~<br>~~a~~<br>~~aeG~~<br>~~©~~<br>~~Ss~~|



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100<br>D = 0.50<br>10<br>0.20<br>0.10<br>0.05<br>1<br>0.02<br>0.01 WA R 1R 1 R 2R 2 R 3R 3 R 4R 4 Ri (°C/W)     τ i (sec)<br>0.1 τ J τ J τ A τ A 12.2942     18.10679<br>τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 14.4246     2.626824<br>See Odi en)! UL | | T T | 2.07265     0.007811<br>0.01 | 2a Ci=  τ i / Ri ee eee |<br>Ci=  τ i / Ri 6.20859     0.239314<br>Pa | A |<br>0.001 SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + Tc<br>PE<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (At lower pulse widths ZthJA & ZthJC are combined) 

Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. Used double sided cooling, mounting pad with large heatsink. 

Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R θ is measured at Ty of approximately 90°C. 

® Surface mounted on 1 in. square Cu board  (still air). 

(©) Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 

www.irf.com 

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1000<br>VGS<br>| AA lf tii TOP           10V5.0V I<br>ZA ne 4.5V 1<br>4.0V<br>100 3.5V<br>3.0V<br>2.8V<br>10 ro BOTTOM 2.5V |<br>1 | 0<br>2.5V<br>≤ 60μs PULSE WIDTH<br>0.1 llSoa Tj = 25°C iriLl<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>VDS = 15V<br>≤ 60μs PULSE WIDTH f |<br>100<br>a<br>of<br>10 -re| NeEff<br>T  = 175°C<br>J<br>aesi | » Aee se T  = 25°C<br>J<br>1 TJ = -40°C<br>eePfeeESee<br>es ee ee ee ee ee ee<br>0.1 |FFFf/f {| f/ f f|<br>1 2 3 4 5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current  (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>— Ciss   = C gs + Cgd,  C ds SHORTED<br>; C rss    = C gd<br>C = C + C<br>oss   ds  gd<br>10000 Ciss<br>—<br>C<br>oss<br>cst<br>Crss<br>1000<br>= Th<br>Ee ee ee ee ee eee<br>100 FEHTIE- EHH<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>a an 4.5V<br>4.0V<br>3.5V<br>3.0V<br>2.8V<br>BOTTOM 2.5V<br>100 Vy) (ia y |<br>iJ4M|\A<br>2.5V ≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>10 anneal |<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>2.0<br>ID = 61A<br>V GS  = 10V<br>VGS = 4.5V<br>cane AL<br>1.5<br>wise<br>Ty 2azat<br>1.0 LLLALLA fA |<br>TTTI TTT<br>0.5 PEL ELLL ELE ELE<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>Typical RDS(on) (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

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0.90<br>Top          Vgs = 6.0V  T = 25°C<br>                 Vgs = 8.0V  J<br>                 Vgs = 10V<br>                 Vgs = 12V<br>                 Vgs = 14V<br>                 Vgs = 16V<br>0.80 Bottom     Vgs = 18V<br>0.70 a<br>0.60 —<br>0.50 =e |<br>0 50 100 150 200<br>ID, Drain Current (A)<br>) Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

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1000<br>us _ _<br>T J  = 175°C<br>100 TJ = 25°CJ = 25°C= 25°C°CC<br>TJ = -40°CJ = -40°C = -40°C-40°C40°C°CC<br>10<br>1<br>VGS = 0VGS = 0V= 0V 0V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000 10000<br>us _ _ ee<br>OPERATION IN THIS AREA<br>T J  = 175°C 1000 LIMITED BY R DS (on)<br>100 TJ = 25°CJ = 25°C= 25°C°CC<br>TJ = -40°CJ = -40°C = -40°C-40°C40°C°CC 1msec 100μsec<br>100<br>10msec<br>10<br>DC<br>10<br>1 1 TC = 25 ° C<br>VGS = 0VGS = 0V= 0V 0V TJ = 175°C<br>Single Pulse<br>0 0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Typical Source-Drain Diode Forward Voltage Fig 11.   Maximum Safe Operating  Area<br>300 3.0<br>250 2.5<br>mf | | ft TET<br>200 PRET 2.0 TT<br>150 SeaNen 1.5 PRERERETTD<br>ID = 150μA<br>100 1.0 ID = 250μA<br>SeeeN@ CPSP<br>ID = 1.0mA<br>0.5 I D  = 1.0A<br>50<br>pi tt tN CEPRALLL EN<br>0.0<br>0<br>25 pitti 50 75 100 125 iA 150 175 -75 -50 -25 0 25 LEU 50 75 100 125 150 EL 175 200<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fig 12.   Maximum Drain Current vs. Case Temperature Fig 13.   Typical Threshold Voltage vs. Junction<br>Temperature<br>400 2400<br>ID<br>TOP      2.9A<br>2000<br>4.6A<br>300 TTT] 1. TTT<br>BOTTOM 49A<br>T = 25°C<br>J  1600<br>| aes NORREEE<br>200 1200<br>La EXGHEEE<br>T = 175°C<br>J<br>800<br>100 7288 NTT<br>VDS = 10V  400<br> 380μs PULSE WIDTH<br>Yo LL TTP SSH<br>0 0<br>0 20 40 60 80 100 25 50 75 100 125 150 175<br>An | SR<br>ID,Drain-to-Source Current (A) Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>Typical VGS(th) Gate threshold Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

**Fig 14.** Typ. Forward Transconductance vs. Drain Current 

**Fig 15.** Maximum Avalanche Energy vs. Drain Current 

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1000<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>pulsewidth, tav, assuming DTj = 150°C and<br>100 Tstart =25°C (Single Pulse)<br>10<br>0.01<br>1 0.05<br>0.10<br>0.1 Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Δ Tj = 25°C and<br>Tstart = 150 ° C.<br>TT<br>0.01<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Typical Avalanche Current vs.Pulsewidth 

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600<br>Pt tT |tty Single Pulse<br>ID = 49A<br>500 NRE<br>PAPE EEE<br>400 ERNE<br>BRN<br>300 PtPittT ||  NEEENE TTEEE|<br>200<br>pit tt | iN Tt<br>EeePTETTT TINE EL<br>100<br>Bae eeEeaNEE<br>Eee e eeeeNGee<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Avalanche Energy vs. Temperature 

## **Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a 

temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 19a, 19b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. Δ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 16, 17). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0 Vgs(th)<br>201 K S<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 18a.** Gate Charge Test Circuit 

**Fig 18b.** Gate Charge Waveform 

**==> picture [189 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>v 2 olt 0V<br>t 0.01 Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 19a.** Unclamped Inductive Test Circuit 

**==> picture [130 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**==> picture [196 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>+- tp -><br>|<br>yd<br>yi<br>IAS<br>Fig 19b.   Unclamped Inductive Waveforms<br>VGS<br>90%<br>10%<br>VDS<br>td(off) tf td(on) tr<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

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**==> picture [427 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>Period D =<br>+ P.W. Period<br>D .U.T — —— a | f<br>VGS=10V<br>(A @    •  Cirout Layout Considerations ,<br> •<br>-  •   Curent Traneformer @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>- - + Current Current di/dt<br>@ D.U.T. VDS Waveform<br>00 Diode Recoverydv/dt \ __ V + DD<br>•   Re-Applied<br>•   + Voltage Body Diode  Forward Drop<br>Re (A) •   difdt controlled by Re Vp p - -<br>•<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


> **Fig 19.** Diode Reverse HEXFET Recovery Power MOSFETs Test Circuit for N-Channel 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

**==> picture [217 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>x 6 0.70 7<br>Ui} D ; 5 YY D<br>S S S<br>D G D<br>S S S<br>L , Y}<br>D D<br>U; 8) Z<br>**----- End of picture text -----**<br>


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Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

|DIMENSIONS<br>~~8~~|DIMENSIONS<br>~~8~~|DIMENSIONS<br>~~8~~|DIMENSIONS<br>~~8~~|DIMENSIONS<br>~~8~~|
|---|---|---|---|---|
|IMPERIAL<br>METRIC<br>DIMENSIONS<br>~~8~~<br>~~a~~<br>~~a~~<br>~~eeee~~<br>~~ee~~<br>~~a~~|||||
|CODE<br>MIN<br>~~a~~<br>~~a~~<br>~~a~~|MIN<br>~~a~~<br>~~ee~~<br>~~ee~~|MAX<br>~~a~~<br>~~ee~~<br>~~ee~~|MIN<br>~~a~~<br>~~ee~~<br>~~ee~~|MAX<br>~~ee~~<br>~~ee~~|
|A<br>9.05<br>~~a~~<br>~~a~~<br>~~a~~|9.05<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>|9.15<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|0.356<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.360<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|B<br>6.85<br>~~a~~<br>~~a~~<br>~~|~~|6.85<br>~~ee ~~<br>~~ee~~<br>~~ee~~|7.10<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.270<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.280<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|C<br>5.90<br>~~a~~ <br>~~|~~<br>|~~fT~~|5.90<br>~~ee ~~<br> ~~ee~~<br>~~fT~~|6.00<br> ~~ee~~<br>~~ee~~<br>~~fT~~|0.232<br>~~ee~~<br>~~ee~~<br>~~fT~~|0.236<br>~~ee~~<br>~~ee~~<br>~~fT~~|
|D<br>0.55<br> <br>~~|~~<br>|~~fT~~<br>~~a~~|0.55<br> ~~ee~~<br>~~fT~~<br>~~ee~~|0.65<br>~~ee~~<br>~~fT~~<br>~~ee~~|0.022<br>~~ee~~<br>~~fT~~<br>~~ee~~|0.026<br>~~ee~~<br>~~fT~~<br>~~ee~~|
|E<br>0.58<br> <br>~~|~~<br>~~a~~<br>~~a~~|0.58<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|0.62<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.023<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.024<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|F<br>1.18<br>~~a~~<br>~~a~~<br>~~a~~|1.18<br>~~ee ~~<br>~~ee~~<br>~~ee~~|1.22<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.046<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.048<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|G<br>0.98<br>~~a~~<br>~~a~~<br>~~a~~|0.98<br>~~ee ~~<br>~~ee~~<br>~~ee~~|1.02<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.015<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.017<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|H<br>0<br>~~a~~<br>~~a~~<br>~~a~~|0.73<br>~~ee ~~<br>~~ee~~<br>~~ee~~|0.77<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.029<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.030<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|J<br>0<br>~~a~~<br>~~a~~<br>~~a~~|0.38<br>~~ee ~~<br>~~ee~~<br>~~ee~~|0.42<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.015<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.017<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|K<br>1.<br>~~a~~<br>~~a~~<br>~~a~~|1.34<br>~~ee ~~<br>~~ee~~<br>~~ee~~|1.47<br> ~~ee~~<br>~~ee~~<br>~~ee~~|0.053<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.058<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|L<br>2.<br>~~a~~<br>~~a~~<br>~~|~~<br>~~|fT~~|2.52<br>~~ee ~~<br>~~ee~~<br>~~fT~~|2.69<br> ~~ee~~<br>~~ee~~<br>~~fT~~|0.099<br>~~ee~~<br>~~ee~~<br>~~fT~~|0.106<br>~~ee~~<br>~~ee~~<br>~~fT~~|
|M<br>0.616<br>~~a~~<br>~~|~~<br>~~|fT~~<br>~~a~~|0.616<br>~~ee ~~<br>~~fT~~<br>~~ee~~|0.676<br> ~~ee~~<br>~~fT~~<br>~~ee~~|0.0235<br>~~ee~~<br>~~fT~~<br>~~ee~~|0.0274<br>~~ee~~<br>~~fT~~<br>~~ee~~|
|N<br>0<br>~~|~~<br>~~|fT~~<br>~~a~~<br>~~a~~|0.020<br>~~fT~~<br>~~ee~~<br>~~ee~~|0.080<br>~~fT~~<br>~~ee~~<br>~~ee~~|0.0008<br>~~fT~~<br>~~ee~~|0.0031<br>~~fT~~<br>~~ee~~|
|P<br>0<br>~~a~~<br>~~a~~|0.09<br>~~ee ~~<br>~~ee~~|0.18<br> ~~ee~~<br>~~ee~~|0.003<br>~~ee~~|0.007<br>~~ee~~|



## DirectFET ® Part Marking 

## GATE MARKING 

## LOGO 

## PART NUMBER 

## BATCH NUMBER 

## DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

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## DirectFET ® Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF6718L2PBF). 

**REEL DIMENSIONS** CT STANDARD OPTION **(QTY 4000)** oO METRIC IMPERIAL ee Pf CODE MIN MAX MIN MAX A 330.0 N.C 12.992 N.C ~~ee ee~~ B 20.2 N.C 0.795 N.C ~~ee~~ C 12.8 13.2 0.504 0.520 ~~eeee~~ D 1.5 N.C 0.059 N.C ~~eeee~~ E 100.0 N.C 3.937 N.C ~~ee[ee] ee ee~~ F N.C 22.4 N.C 0.889 ~~ee ee~~ G 16.4 18.4 0.646 0.724 ~~eeee~~ H 15.9 ~~[eee]~~ 18.4 0.626 0.724 ~~eeee[a]~~ 

## Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

Data and specifications subject to change without notice. This product has been designed and qualified to MSL1 rating for the Consumer market. 

Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2011 

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10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6718L2TRPBF/power-mosfet-n-channel-25-v-270-a-500-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf6718l2trpbf/mosfet-n-ch-25v-270a-directfet/dp/2725894)
---

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