# Power MOSFET, N Channel, 25 V, 38 A, 1250 µohm, DirectFET MX, Surface Mount

![Product image](https://novapart.co/image/farnell:2781114/)

**URL**: https://novapart.co/products/IRF6717MTRPBF/power-mosfet-n-channel-25-v-38-a-1250-ohm
**SKU**: IRF6717MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1800
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):950µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 96W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MX |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 38A |
| Drain Source On State Resistance | 1250µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781114/)

## IRF6717MPbF 

## IRF6717MTRPbF 

## DirectFET T™ Power MOSFET 

RoHs Compliant and Halgen Free 

|RoHs Compliant and Halgen Free<br>o||||||~~Typical values~~|~~values~~|~~values~~|~~values (unless otherwise specified)~~|~~values (unless otherwise specified)~~|~~values (unless otherwise specified)~~|~~values (unless otherwise specified)~~|~~values (unless otherwise specified)~~|~~values (unless otherwise specified)~~|~~values (unless otherwise specified)~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|RoHs Compliant and Halgen Free<br>Low Profile (<0.7 mm)||||||**VDSS**|||**VGS**<br>**RDS(on)**<br>**RDS(on)**|||||||
|Dual Sided Cooling Compatible<br>®||||||25V max|||±20V max 0.95m@ 10V|||@ 10V 1.6m@ 4.5V||||
|Ultra Low Package Inductance||||||**Qg  tot**|||**Qgd**<br>**Qgs2**|**Qrr**|||**rr**<br>**Qoss**|**oss**|**Vgs(th)**|
|Optimized for High Frequency Switching|Optimized for High Frequency Switching<br>®|||||46nC||14nC<br>6.6nC||31nC<br>35nC|||||1.8V|
|Ideal for CPU Core DC-DC Converters<br>Optimized for Sync. FET socket of Sync. Buck Converter|Optimized for Sync. FET socket of Sync. Buck Converter<br>oO||||||||~~—r~~|||||||
|Low Conduction and Switching Losses|||||||||es|||||||
|Compatible with existing Surface Mount Techniques||||||||||||||||
|100% Rg tested|||||||||x||||DirectFET<br>ISOMETRIC<br>™|ISOMETRIC||
|Applicable DirectFET Outline and<br>Substrate||Outline|(see||p.7,8|for details)||||||||||||
|SQ<br>SX<br>ST<br>~~[|~~<br>~~~~~<br>~~|~~||MQ|**MX**<br>MT<br>~~Wm~~||||||MP<br>~~TT~~||~~TT)~~|||||



Low Profile (<0.7 mm) 

Dual Sided Cooling Compatible Ultra Low Package Inductance 

Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters 

Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses 

Compatible with existing Surface Mount Techniques 100% Rg tested 

## **Description** 

The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6717MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6717MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications . 

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Absolute Maximum Ratings<br>Parameter Max. Units<br>VDS a Drain-to-Source Voltage 25 V<br>VGS eea Gate-to-Source Voltage  ±20<br>ID @ TA = 25°C Continuous Drain Current, VGS @ 10V  38<br>ID @ TA = 70°C Continuous Drain Current, VGS @ 10V  30 A<br>ID @ TC = 25°C PO Continuous Drain Current, VGS @ 10V  220<br>IDM P rs Pulsed Drain  O Current  f( 300 rs<br>EAS PO Single Pulse Avalanche Energy 290 mJ<br>IAR ©Fe Avalanche Current 30 A<br>6 14.0<br>5 ID = 30AD = 30A= 30A 12.0 I D = 30A VDS= 20VDS= 20V= 20V<br>HH — 1]<br>4 10.0 V DS = 13V<br>ia ee ae<br>8.0<br>3<br>Yt ft tt i<br>6.0<br>2 T J  = 125°C 4.0<br>PAP PP Et A<br>1 PINS TJ = 25°CJ = 25°C= 25°C 2.0 ee<br>0 pt. | | TdT LT 0.0 yt | | tf ft<br>2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>)<br>Typical RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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6 14.0<br>5 ID = 30AD = 30A= 30A 12.0 I D = 30A VDS= 20VDS= 20V= 20V<br>HH — 1]<br>4 10.0 V DS = 13V<br>ia ee ae<br>8.0<br>3<br>Yt ft tt i<br>6.0<br>2 T J  = 125°C 4.0<br>PAP PP Et A<br>1 PINS TJ = 25°CJ = 25°C= 25°C 2.0 ee<br>0 pt. | | TdT LT 0.0 yt | | tf ft<br>2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100<br> QG  Total Gate Charge (nC)<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>Typical RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Typical  Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.64mH, RG = 25, IAS = 30A.J = 25°C, L = 0.64mH, RG = 25, IAS = 30A.= 25°C, L = 0.64mH, RG = 25, IAS = 30A.G = 25, IAS = 30A.= 25, IAS = 30A., IAS = 30A., IAS = 30A.AS = 30A.= 30A. 

Click on this section to link to the appropriate technical paper. TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. ®© Click on this section to link to the DirectFET Website. Repetitive rating;  pulse width limited by max. junction temperature. ® Surface mounted on 1 in. square Cu board, steady state.[©] Starting TJ = 25°C, L = 0.64mH, RG = 25, IAS = 30A.J = 25°C, L = 0.64mH, RG = 25, IAS = 30A.= 25°C, L = 0.64mH, RG = 25, IAS = 30A.G = 25, IAS = 30A.= 25, IAS = 30A., IAS = 30A., IAS = 30A.AS = 30A.= 30A. 

www.irf.com 

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06/01/12 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~es~~|**Min.**<br>~~es~~<br>~~es~~<br>~~ss~~|**Typ.**<br>~~es~~<br>~~es~~<br>~~ss~~|**Max. **<br>~~es~~<br>~~ID~~|**Units**<br>~~es~~<br>~~ID~~|**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~rn~~|25<br>~~es~~<br>~~rn~~<br>~~ss~~|–––<br>~~es~~<br>~~rn~~<br>~~ss~~|–––<br>~~rn~~<br>~~ID~~<br>~~I~~|V<br>~~rn~~<br>~~ID~~<br>~~(Oe~~|VGS= 0V, ID= 250μA<br>~~rn~~<br>~~(Oe~~|
|VDSS/TJ|Breakdown Voltage Temp. Coefficient<br>~~Gs~~|–––<br>~~ss~~<br>~~Gs~~|18<br>~~ss ~~<br>~~Gs~~|–––<br> ~~ID ~~<br>~~Gs~~<br>~~I~~|mV/°C<br> ~~ID~~<br>~~Gs~~<br>~~(Oe~~|Reference to 25°C, ID= 1mA<br>~~Gs~~<br>~~(Oe~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~OE~~<br>~~**e**s~~|–––<br>~~OE~~<br>|0.95<br>~~OE~~<br>~~**e**e~~|1.25<br>~~I ~~<br>~~OE~~|m<br> ~~(Oe~~<br>~~OE~~|VGS= 10V, ID= 38A<br>~~(Oe~~<br>~~OE~~|
|||–––<br>~~OE~~<br>~~ee~~<br>~~Oe~~|1.6<br>~~OE~~<br>~~ee~~<br>~~**e**e~~|2.1<br>~~OE~~<br>~~ee~~<br>~~e~~||VGS= 4.5V, ID= 30A<br>~~OE~~|
|VGS(th)|Gate Threshold Voltage<br>~~OE~~<br>~~**e**s~~|1.35<br>~~OE~~<br>~~ee~~<br>~~Oe~~|1.8<br>~~OE~~<br>~~ee~~<br>~~**e**e~~|2.35<br>~~OE~~<br>~~ee~~<br>~~e~~|V<br>~~OE~~|VDS= VGS, ID= 150μA<br>~~OE~~<br>~~"|~~|
|VGS(th)/TJ|Gate Threshold Voltage Coefficient<br>~~**e**s~~<br>~~s~~|–––<br>~~Oe~~<br>~~s~~<br>~~ee~~|-6.7<br>~~**e**e~~<br>~~s~~<br>|–––<br>~~e~~<br>~~s~~|mV/°C<br>~~s~~||
|IDSS|Drain-to-Source Leakage Current<br>~~**e**s ~~<br>~~s~~<br>~~EE~~|–––<br> ~~Oe~~<br>~~s~~<br>~~EE~~<br>~~ee~~|–––<br>~~**e**e~~<br>~~s~~<br>~~EE~~<br>~~ee~~|1.0<br>~~e~~<br>~~s~~<br>~~EE~~|μA<br>~~s~~<br>~~EE~~|VDS= 20V, VGS= 0V<br>~~EE~~<br>~~"|~~<br>~~ee~~|
|||–––<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee~~|150<br>~~EE~~||VDS= 20V, VGS= 0V, TJ= 125°C<br>~~EE~~<br>~~"|~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee ~~<br>~~ee~~|–––<br>~~EE~~<br> ~~ee~~<br>~~ee~~|100<br>~~EE~~<br>~~ee~~|nA<br>~~EE~~<br>~~ee~~<br>~~OD~~|VGS= 20V<br>~~EE~~<br>~~"|~~<br>~~ee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~Gs~~|-100<br>~~ee~~<br>~~ID OD~~||VGS= -20V<br>~~ee~~<br>~~ee~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~rs~~|140<br>~~ee~~<br>~~a~~<br>~~rs~~<br>~~es~~|–––<br>~~ee~~<br>~~a~~<br>~~rs~~<br>~~Gs~~<br>~~ee~~|–––<br>~~ee~~<br>~~rs~~<br>~~ID OD~~|S<br>~~ee~~<br>~~rs~~<br>~~OD~~|VDS= 13V, ID=30A<br>~~ee~~<br>~~ee~~<br>~~rs~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|46<br>~~Gs ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|69<br> ~~ID OD~~<br>~~es~~|nC<br>~~OD~~<br>~~(OO~~|See Fig. 15<br>VGS= 4.5V<br>ID= 30A<br>VDS= 13V<br>~~(OO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~|14<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|6.6<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~|14<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~ee~~|11<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qsw|Switch Charge(Qgs2+ Qgd)<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~ee~~|20.6<br> ~~ee~~<br>~~ee~~<br>~~GsGs~~|–––<br>~~ee~~<br>~~GsGs~~|||
|Qoss|Output Charge<br>~~eG~~<br>~~es~~|–––<br>~~ee~~<br>~~eG~~<br>|35<br>~~eG~~<br>~~GsGs~~<br>|–––<br>~~eG~~<br>~~GsGs~~<br>~~ID~~|nC<br>~~eG~~<br>~~(OO~~|VDS= 16V, VGS= 0V<br>~~eG~~<br>~~(OO~~|
|RG|Gate Resistance<br>~~ss~~<br>~~es~~|–––<br>~~ss~~<br>~~es~~|1.3<br>~~GsGs~~<br>~~ss~~<br>~~ee~~|2.2<br>~~GsGs ~~<br>~~ss~~<br>~~ID~~|<br> ~~(OO~~<br>~~ss~~|~~(OO~~<br>~~ss~~<br>@|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~<br>~~es~~|25<br>~~ee~~<br>~~ee~~|–––<br>~~ID~~|ns|ID= 30A<br>VDD= 13V, VGS= 4.5V<br>RG= 1.8<br>@|
|tr|Rise Time<br>~~es ~~<br>~~ee~~|–––<br> ~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~|37<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ID~~<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|19<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~|15<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|6750<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 13V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~es~~|1700<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~|730<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|||



> Repetitive rating;  pulse width limited by max. junction temperature. 

> Pulse width  400μs; duty cycle  2%. 

www.irf.com 

2 

|**Absolute Maximum Ratings**<br>**Parameter**<br>**Units**<br>PD@TA =25°C<br>Power Dissipation<br>W<br>PD @TA= 70°C<br>Power Dissipation<br>PD@TC =25°C<br>Power Dissipation<br>TP<br>PeakSolderingTemperature<br>°C<br>TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range<br>270<br>-40  to + 150<br>**Max.**<br>96<br>2.8<br>1.8<br> ~~a~~<br>~~C~~<br>~~©~~<br>~~QO~~<br>~~©~~<br>~~Qe~~<br>~~©~~<br>~~QO~~<br>~~ee~~<br>~~es~~|**Absolute Maximum Ratings**<br>**Parameter**<br>**Units**<br>PD@TA =25°C<br>Power Dissipation<br>W<br>PD @TA= 70°C<br>Power Dissipation<br>PD@TC =25°C<br>Power Dissipation<br>TP<br>PeakSolderingTemperature<br>°C<br>TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range<br>270<br>-40  to + 150<br>**Max.**<br>96<br>2.8<br>1.8<br> ~~a~~<br>~~C~~<br>~~©~~<br>~~QO~~<br>~~©~~<br>~~Qe~~<br>~~©~~<br>~~QO~~<br>~~ee~~<br>~~es~~|
|---|---|
|**Thermal Resistance**||
||**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>~~QQ~~|
|RJA|Junction-to-Ambient<br>–––<br>45<br>~~©~~|
|RJA<br>RJA|Junction-to-Ambient<br>12.5<br>–––<br>Junction-to-Ambient<br>20<br>–––<br>°C/W<br>~~©~~<br>~~QO~~<br>~~©~~|
|RJC<br>RJ-PCB|Junction-to-Case<br>–––<br>1.3<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>Linear DeratingFactor<br>W/°C<br>0.022<br>~~©~~<br>~~a~~<br>~~(~~<br>~~©~~<br>~~eC~~|



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100<br>D = 0.50<br>10 0.20<br>ms eH Ri (°C/W)   i (sec)<br>0.10<br>0.0116        0.000007<br>——— 0.05 ST TT aoocatl<br>0.0289        3.55E-06<br>1 a 0.02 | eee ec |<br>0.2249        0.000076<br>0.01<br>R1R1 R2R2 R 3R 3 R 4R 4 R 5 R 5 R6 R 6 R7R 7 R 8 R 8 0.3032        0.006892<br>0.1 FfPN Feree  J J 1 Ci=  1 |eee iRi 22 33 44 55 66 77 AA 0.7515        0.0016452.7510        0.009995 I—<br>Ci= iRi<br>erie > ete _| 17.682        38.19138 |<br>0.01 PFre CE CE EE Notes: ttt 23.053        1.05185<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>OAT ( THERMAL RESPONSE ) a 2. Peak Tj = P dm x Zthja + Tc Mtl<br>ARH a ee lll All<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

Ris measured at 

6)) Surface mounted on 1 in. square Cu (still air). 

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© Mounted to a PCB with<br>small clip heatsink (still air)<br>**----- End of picture text -----**<br>


@ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

www.irf.com 

3 

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1000 1000<br>Tj = 2560μs PULSE WIDTH ° C TOP           VGS10V5.0V Tj = 150°C60μs PULSE WIDTHTj = 150°C60μs PULSE WIDTH TOP           VGS10V5.0V10V5.0V5.0V<br>a 4.5V 4.5V<br>3.5V 3.5V<br>| 3.3V i tT Ty 3.3V<br>Vi tt + HH<br>3.0V 3.0V<br>100 2.8V 100 2.8V<br>eeaaa aicieeenen ane BOTTOM 2.5V OP BOTTOM etn 2.5V<br>Cac ee nn8ll ee LA |<br>ty CAR ae<br>10 10<br>tS PR cereTrlTrl<br>2.5V<br>a ee a eel<br>1 ae 2.5V lll 1 a<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics Fig 5.   Typical Output Characteristics<br>1000 2.0<br>VDS = 15V ID = 38A<br>60μs PULSE WIDTH<br>100 a OLE VGS = 10V<br>1.5 VGS = 4.5V<br>T  = 150°C<br>J<br>T  = 25°C<br>10 T J  = -40°C<br>J Lyf | Pe 4<br>1.0<br>1<br>filet<br>0.1 ee 0.5<br>ee [ee] | )  GLE<br>1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics Fig 7.   Normalized On-Resistance vs. Temperature<br>100000 6<br>VGS   = 0V,       f = 1 MHZ<br>T = 25°C<br>Ciss   = C gs + Cgd,  C ds SHORTED Vgs = 3.5V  J<br>C rss    = C gd  5 Vgs = 4.0V<br>C = C + C<br>oss   ds  gd Vgs = 4.5V<br>10000 rr 4 { | Vgs = 5.0V  z=<br>C<br>iss Vgs = 10V<br>1000 L CCossrss ee eee 32 // |<br>C= Ly<br>ee 1 ee es<br>100 eea ee eee| 0 Pf fT<br>1 10 100 0 50 100 150 200<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current  (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>C, Capacitance(pF)<br>)<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


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1000<br>60μs PULSE WIDTHμs PULSE WIDTHs PULSE WIDTH TOP<br>Tj = 150°C60μs PULSE WIDTHTj = 150°C60μs PULSE WIDTH VGS10V5.0V10V5.0V5.0V<br>4.5V<br>3.5V<br>i tT Ty 3.3V<br>+ HH<br>3.0V<br>100 2.8V<br>OP BOTTOM etn 2.5V<br>LA |<br>CAR ae<br>10<br>cereTrlTrl<br>2.5V<br>a eel<br>1 a<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

www.irf.com 

4 

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**----- Start of picture text -----**<br>
1000 1000 ee OPERATION IN THIS AREA LIMITED  eee<br>BY RDS(on)<br>10 0μsec<br>100 100<br>1msec<br>10 10<br>200μsec<br>DC<br>10msec<br>T J  = 150°C<br>1 TJ = 25°C 1<br>TJ = -40°C Ta = 25°C<br>0 | f/f] | V GS  = 0V 0.1 TSingle Pulsej = 150°C TUT STTTTTEEsEH<br>0.0 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage Fig11.   Maximum Safe Operating  Area<br>240 2.5 PPT<br>200<br>2.0 PAL LEE EL<br>Ptt tT EL LLL<br>160<br>— PE<br>ID = 150μA<br>120 awe— 1.5 LINE<br>80 TTT PNET<br>1.0<br>40 TF INTK INTKTK pttSaeeeexeety tT IN<br>0 || | | LN 0.5 P T TyELEty ty ys<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
240<br>200<br>Ptt<br>160<br>awe—<br>120<br>80 TTT<br>40 TF INTK INTKTK<br>| | LN<br>0 ||<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

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**----- Start of picture text -----**<br>
1200<br>ID<br>TOP      19A<br>1000<br>24A<br>BOTTOM 30A<br>VENo<br>800<br>600<br>ENSREEREEE<br>400<br>NACE<br>200<br>SNUNHREEIE<br>SSH<br>0 S| LT<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0<br>1K<br>na<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**==> picture [190 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>G D.U.T +<br>- [V][DD]<br>IAS<br>> 20V Jt<br>t 0.01<br>p<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
+<br>-<br><br><br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

**==> picture [192 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 15b.** Gate Charge Waveform 

**==> picture [195 x 365] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>+ tp -><br>fal<br>yf<br>/ |<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

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6 

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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + — — P.W. _ ,  — — ee Period<br>VGS=10<br>) ©)  Creu vayout ransiderations ii<br><br>| -  Cowow LeakaneStray InductanceInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [L] Current Transformer - ® + Current r Current di/dt NN<br>00 D.U.T. VDS Waveform Diode Recoverydv/dt \ +<br>® VDD<br> Re-Applied<br> Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (A)  di/Ispdtcontrolled controlledby byDuty Rg Factor "D" Vo p - ® t ee<br> D.U.T. - Device Under Test Ripple   5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

**==> picture [217 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.90 G = GATE<br>x4 D = DRAIN<br>S = SOURCE<br>: 0.75 1.45<br>x2<br>-<br>D D<br>= 7<br>S<br>F Y AN, G J C D ~U<br>S<br>D D<br>**----- End of picture text -----**<br>


www.irf.com 

7 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

|K||
|---|---|
||CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>J<br>K<br>L<br>M<br>P<br>0.017<br>0.028<br>0.007<br>0.040<br>0.095<br>0.156<br>0.028<br>0.018<br>0.028<br>MAX<br>0.250<br>0.201<br>0.38<br>0.59<br>0.08<br>0.88<br>2.28<br>3.85<br>0.68<br>0.35<br>0.68<br>MIN<br>6.25<br>4.80<br>0.42<br>0.70<br>0.17<br>1.02<br>2.42<br>3.95<br>0.72<br>0.45<br>0.72<br>MAX<br>6.35<br>5.05<br>0.015<br>0.023<br>0.003<br>0.090<br>0.035<br>0.152<br>0.027<br>0.027<br>0.014<br>MIN<br>0.189<br>0.246<br>METRIC<br>IMPERIAL<br>DIMENSIONS<br>1.38<br>1.42<br>0.80<br>0.84<br>0.056<br>0.054<br>0.033<br>0.031<br>N<br>0.03<br>0.08<br>0.001<br>0.003<br>~~OTC~~<br>~~|~~<br>~~|~~<br>~~|ff~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~ee ee ee~~<br>~~ee ee~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fT~~<br>~~ee ee ee ee~~|
|GATE MARKING||



## LOGO 

## PART NUMBER BATCH NUMBER 

## DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

www.irf.com 

8 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7" reel, order   IRF6717MTR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6717MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6717MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6717MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6717MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6717MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6717MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6717MTR1PBF|
|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>MAX<br>IMPERIAL<br>MIN<br>STANDARD OPTION**(QTY 4800)**<br>CODE<br>MAX<br>MIN<br>METRIC<br>MIN<br>TR1 OPTION**(QTY 1000)**<br>MAX<br>MIN<br>METRIC<br>MAX<br>IMPERIAL<br>~~—~~|||||||
|330.0<br>A<br>~~—~~|330.0<br>N.C<br>~~—~~|N.C<br>12.992|N.C<br>177.77|N.C|6.9|6.9<br>N.C|
|20.2<br>B<br>~~pp~~|20.2<br>N.C<br>~~pp~~|N.C<br>0.795<br>~~pp~~|N.C<br>19.06<br>~~pp~~|N.C<br>~~pp~~|0.75<br>~~pp~~|0.75<br>N.C<br>~~pp~~|
|12.8<br>C<br>~~pp~~|12.8<br>13.2<br>~~pp~~|0.520<br>0.504<br>~~pp~~|12.8<br>13.5<br>~~pp~~|12.8<br>~~pp~~|0.53<br>~~pp~~|0.53<br>0.50<br>~~pp~~|
|1.5<br>D<br>~~ee~~|1.5<br>N.C<br>~~ee~~<br>~~ee~~|N.C<br>0.059<br>~~ee~~|N.C<br>1.5<br>~~eeee~~|N.C<br>~~ee~~|0.059|0.059<br>N.C|
|100.0<br>E<br>~~ee~~|100.0<br>N.C<br>~~ee~~<br>~~ee~~|N.C<br>3.937<br>~~ee~~|N.C<br>58.72<br>~~ee ee~~|N.C<br>~~ee~~|2.31|2.31<br>N.C|
|N.C<br>F<br>~~ee~~|N.C<br>18.4<br>~~ee~~<br>~~ee~~|0.724<br>N.C<br>~~ee~~|13.50<br>N.C<br>~~eeee~~|13.50<br>~~ee~~|N.C|N.C<br>0.53|
|12.4<br>G<br>~~ee~~|12.4<br>14.4<br>~~ee~~<br>~~ee~~|0.567<br>0.488<br>~~ee~~|12.01<br>11.9<br>~~eeee~~|12.01<br>~~ee~~|0.47|0.47<br>N.C|
|11.9<br>H|11.9<br>15.4|0.606<br>0.469|12.01<br>11.9|12.01|0.47|0.47<br>N.C|



LOADED TAPE FEED DIRECTION 

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**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>NOTE: CONTROLLING<br>DIMENSIONS IN MM ee CODE A  7.90 MIN  MAX 8.10 0.311 MIN  MAX0.319<br>ee  B  3.90  4.10 0.154 0.161<br>ee  C 11.90 12.30 0.469 0.484<br>ee  D  5.45  5.55 0.215 0.219<br>ee  E  5.10  5.30 0.201 0.209<br>ee  F  6.50  6.70 0.256 0.264<br>ee  G  1.50  N.C 0.059  N.C<br>ee  H  1.50  1.60 0.059 0.063<br>ee<br>**----- End of picture text -----**<br>


## Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/12 

www.irf.com 

9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irf6717mtrpbf/mosfet-n-ch-25v-38a-directfet/dp/2781114)
---

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