# Power MOSFET, N Channel, 25 V, 180 A, 1600 µohm, DirectFET MX, Surface Mount

![Product image](https://novapart.co/image/farnell:2781113/)

**URL**: https://novapart.co/products/IRF6715MTRPBF/power-mosfet-n-channel-25-v-180-a-1600-ohm
**SKU**: IRF6715MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1000
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.001; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 78W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MX |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 180A |
| Drain Source On State Resistance | 1600µohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781113/)

## IRF6715MPbF 

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**----- Start of picture text -----**<br>
 Rectifier IRF6715MTRPbF<br>RoHs Compliant and Halogen Free © Typical values (unless DirectFET otherwise specified) Power MOSFET<br>VDSS VGS RDS(on) RDS(on)<br> Low Profile (<0.6 mm)<br>25V max ±20V max 1.3m Ω @ 10V 2.1m Ω @ 4.5V<br>Dual Sided Cooling Compatible<br>Ultra Low Package Inductance Qg  tot Qgd   Qgs2   Qrr   Qoss   Vgs(th)<br>Optimized for High Frequency Switching  40nC 12.0nC 5.3nC 37nC 26nC 1.9V<br>0 Eee<br>Ideal for CPU Core DC-DC ConvertersOptimized for Sync. FET socket of Sync. Buck ConverterOptimized for Sync. FET socket of Sync. Buck Converter ® a<br>Low Conduction and Switching Losses<br>Compatible with existing Surface Mount Techniques<br>100% Rg tested<br>MX DirectFET m  ISOMETRIC<br>Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details)<br>SQ SX ST MQ MX MT MP<br>**----- End of picture text -----**<br>


RoHs Compliant and Halogen Free 

Low Profile (<0.6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching 0 Ideal for CPU Core DC-DC ConvertersOptimized for Sync. FET socket of Sync. Buck ConverterOptimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested 

Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) 

## **Description** 

The IRF6715MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6715MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6715MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6715MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications . 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**<br>~~oo~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~oo~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~oo~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~oo~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~oo~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~oo~~|**Max.**|**Units**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|VDS||||Drain-to-Source Voltage<br>~~oo~~||||||25|V<br>~~ee~~|
|VGS||||Gate-to-Source Voltage<br>~~oo~~<br>~~ee~~||||||±20<br>~~ee~~||
|ID @TA= 25°C||C||Continuous Drain Current,VGS@ 10V<br>~~oo~~<br>~~ee~~||||||34<br>~~ee~~|A<br>~~ee~~|
|ID @TA= 70°C||C||Continuous Drain Current,VGS@ 10V<br>~~oo~~<br>~~ee~~||||||27<br>~~ee~~||
|ID @TC= 25°C||C||Continuous Drain Current,VGS@ 10V<br>~~ee~~<br>~~©~~||||||180<br>~~ee~~||
|IDM||||Pulsed DrainCurrent<br>~~ee~~<br>~~©~~<br>~~QO~~<br>~~>~~<br>~~QO~~||||||270<br>~~ee~~<br>~~QO~~<br>~~QO~~||
|EAS||||Single Pulse Avalanche Energy<br>~~ee~~<br>~~©~~<br>~~QO~~<br>~~>~~<br>~~QO~~<br>~~©~~||||||200<br>~~ee~~<br>~~QO~~<br>~~QO~~|mJ<br>~~ee~~|
|IAR||||AvalancheCurrent<br>~~>~~<br>~~QO~~<br>~~©~~||||||27<br>~~QO~~|A|
|0<br>1<br>2<br>3<br>4<br>Typical RDS(on) (mΩ)<br>T<br>J<br>= 25°C<br>~~Dae~~<br>~~P~~<br>~~ARBRE~~<br>~~oy~~||I<br>D<br>= 34A<br>= 25°C<br>T<br>J<br>= 125°C<br>0.0<br>2.0<br>4.0<br>6.0<br>8.0<br>10.0<br>12.0<br>14.0<br>VGS, Gate-to-Source Voltage (V)<br>V<br>DS<br>= 20V<br>V<br>DS<br>= 13V<br>I<br>D<br>= 27A<br>~~©~~<br>~~Dae~~<br>~~| ~~Re<br>~~PNT)~~<br>~~F~~e<br>~~ARBRE LTE LI~~<br>~~A~~a<br>~~a~~<br>~~ne~~<br>~~oy ~~Peete<br>~~a~~||||||||||
||~~Dae~~<br>~~P~~|~~Dae~~<br>~~P~~|~~Dae~~<br>~~PNT~~|~~Dae~~<br>~~NT~~|~~Dae~~<br>~~NT~~|~~Dae~~<br>~~NT~~|I<br>~~Dae~~<br>~~NT)~~|I<br>D<br>= 34A<br>~~Dae~~<br>~~)~~|= 34A<br>~~Dae~~<br>~~)~~|||
||~~Dae~~<br>~~P~~<br>~~ARBRE~~|~~Dae~~<br>~~P~~<br>~~ARBRE~~|~~Dae~~<br>~~PNT~~<br>~~ARBRE~~|~~Dae~~<br>~~NT~~<br>~~ARBRE~~|~~Dae~~<br>~~NT~~<br>~~ARBRELTE~~|~~Dae~~<br>~~NT~~<br>~~LTE~~|~~Dae~~<br>~~NT)~~<br>~~LTE~~|~~Dae~~<br>~~)~~<br>~~LI~~|~~Dae~~<br>~~)~~<br>~~LI~~|||
||~~P~~<br>~~ARBRE~~<br>~~oy~~|~~P~~<br>~~ARBRE~~<br>~~oy~~|~~PNT~~<br>~~ARBRE~~<br>~~a~~<br>~~oy~~|T<br>~~NT~~<br>~~ARBRE~~<br>~~a~~<br>|T<br>J<br>= 125°C<br>~~NT~~<br>~~ARBRELTE~~<br>~~a~~<br>|= 125°C<br>~~NT~~<br>~~LTE~~<br>|~~NT)~~<br>~~LTE~~<br>|~~)~~<br>~~LI~~<br>|~~)~~<br>~~LI~~<br>|||
||T<br>J<br>= 25°C<br>~~ARBRE~~<br>~~oy~~|= 25°C<br>~~ARBRE~~<br>~~oy~~|= 25°C<br>~~ARBRE~~<br>~~a~~<br>~~oy ~~|~~ARBRE~~<br>~~a~~<br> Peete|~~ARBRE LTE~~<br>~~a~~<br>Peete|~~LTE~~<br>Peete|~~LTE ~~<br>Peete|~~LI~~<br>Peete|~~LI~~<br>Peete|||



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4<br>ID = 34A<br>3<br>Dae<br>2<br>PNT)<br>T = 125°C<br>J<br>1 ARBRE LTE LI<br>T = 25°C<br>J<br>0 oya [Peete]<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 1.    Typical On-Resistance Vs. Gate Voltage<br>) Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 2.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

~ Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. 

TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.56mH, RG = 25 Ω , IAS = 27A. 

Surface mounted on 1 in. square Cu board, steady state. 

www.irf.com 

1 

02/16/11 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~se~~|**Typ.**<br>~~se~~|**Max. **<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~|25<br>~~es~~<br>~~se~~<br>~~Ps~~|–––<br>~~es~~<br>~~se~~|–––<br>~~es~~<br>~~QO~~|V<br>~~es~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~se~~<br>~~es~~<br>~~Ps~~|17<br>~~se ~~<br>~~es~~|–––<br> ~~QO~~<br>~~es~~|mV/°C<br>~~QO~~<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~———~~|–––<br>~~Ps~~<br>~~———~~<br>~~|~~|1.3<br>~~———~~<br>~~|~~|1.6<br>~~———~~|mΩ<br>~~———~~|VGS= 10V, ID= 34A<br>~~———~~<br>~~@~~|
|||–––<br>~~———~~<br>~~|~~|2.1<br>~~———~~<br>~~|~~|2.7<br>~~———~~||VGS= 4.5V, ID= 27A<br>~~———~~<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~of~~|1.4<br>~~|~~<br>~~of~~<br>~~ed~~|1.9<br>~~|~~<br>~~of~~|2.4|V|VDS= VGS, ID= 100µA<br>~~@~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~es~~|–––<br>~~es~~<br>~~ed~~|-6.2<br>~~es~~|–––<br>~~es~~|mV/°C<br>~~es~~||
|IDSS|Drain-to-Source Leakage Current<br>~~OE~~|–––<br>~~ed~~<br>~~OE~~<br>~~**|**~~|–––<br>~~OE~~<br>~~**|**~~|1.0<br>~~OE~~|µA<br>~~OE~~|VDS= 20V, VGS= 0V<br>~~OE~~|
|||–––<br>~~OE~~<br>~~**|**~~|–––<br>~~OE~~<br>~~**|**~~|150<br>~~OE~~||VDS= 20V, VGS= 0V, TJ= 125°C<br>~~OE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~OE~~<br>~~See~~|–––<br>~~OE~~<br>~~**|**~~<br>~~See~~|–––<br>~~OE~~<br>~~**|**~~<br>~~See~~|100<br>~~OE~~<br>~~See~~|nA<br>~~OE~~<br>~~See~~|VGS= 20V<br>~~OE~~<br>~~See~~|
||Gate-to-Source Reverse Leakage<br>~~See~~|–––<br>~~See~~<br>~~a~~|–––<br>~~See~~|-100<br>~~See~~||VGS= -20V<br>~~See~~|
|gfs|Forward Transconductance<br>~~See~~<br>~~eG~~|135<br>~~See~~<br>~~a~~<br>~~eG~~<br>~~es~~|–––<br>~~See~~<br>~~eG~~|–––<br>~~See~~<br>~~eG~~|S<br>~~See~~<br>~~GO~~|VDS= 13V, ID= 27A<br>~~See~~<br>~~GO~~|
|Qg|Total Gate Charge<br>~~eG~~<br>~~es~~|–––<br>~~eG~~<br>~~es~~<br>~~es~~|40<br>~~eG~~<br>~~es~~|59<br>~~eG ~~<br>~~es~~|nC<br> ~~GO~~|See Fig. 15<br>VGS= 4.5V<br>ID= 27A<br>VDS= 13V<br>~~GO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|12<br>~~es~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|5.3<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|12<br>~~es~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~<br>~~es~~|11<br>~~es~~|–––<br>~~es~~|||
|Qsw|Switch Charge(Qgs2+ Qgd)<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|17<br>~~ee~~|–––<br>~~ee~~|||
|Qoss|Output Charge<br>~~ee~~<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~es~~|–––<br>~~ee~~<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~QQ~~<br>|26<br>~~ee~~<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~QQ~~<br>|–––<br>~~ee~~<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~QQ~~|nC<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~QO~~|VDS= 16V, VGS= 0V<br>~~PO—“(i‘“‘“‘“‘“~~|
|RG|Gate Resistance<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~Rs~~<br>~~es~~|–––<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~Rs~~<br>~~QQ~~<br>|1.1<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~Rs~~<br>~~QQ~~<br>|2.0<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~Rs~~<br>~~QQ~~|Ω<br>~~PO—“(i‘“‘“‘“‘“~~<br>~~Rs~~<br>~~QO~~|~~PO—“(i‘“‘“‘“‘“~~<br>~~Rs~~|
|td(on)|Turn-On DelayTime<br>~~es ~~|–––<br>~~QQ~~<br> ~~ee~~<br>~~ee~~|20<br>~~QQ~~<br>~~ee~~<br>~~es~~|–––<br>~~QQ~~|ns<br> ~~QO~~|ID= 27A<br>VDD= 13V, VGS= 4.5V<br>See Fig. 17<br>RG= 1.8Ω<br>@|
|tr|Rise Time<br>~~es ~~<br>~~es~~|–––<br>~~QQ~~<br> <br>~~es~~<br>~~ee~~<br>~~es~~|31<br>~~QQ~~<br><br>~~es~~<br>~~es~~|–––<br>~~QQ ~~<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|16<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|12<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~|5340<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 13V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~|1280<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~|600<br>~~es~~|–––<br>~~es~~|||



> Pulse width ≤ 400µs; duty cycle ≤ 2% 

www.irf.com 

2 

## **Absolute Maximum Ratings** 

||**Parameter**<br>**Max.**|**Units**|
|---|---|---|
|PD @TA= 25°C<br>PD @TA= 70°C<br>PD @TC= 25°C<br>TP<br>TJ<br>TSTG|Power Dissipation<br>Power Dissipation<br>Power Dissipation<br>PeakSolderingTemperature<br>Operating Junction and<br>Storage Temperature Range<br>78<br>2.8<br>1.8<br>270<br>-40  to + 150<br>~~I a~~<br>~~O~~<br>~~«a~~<br>~~a~~<br>~~©~~<br>~~ne~~<br>~~ee~~|W<br>°C|
|**Thermal Resistance**|||
||**Parameter**<br>**Typ.**<br>**Max.**|**Units**|
|RθJA<br>RθJA<br>RθJA<br>RθJC<br>RθJ-PCB|Junction-to-Ambient<br>–––<br>45<br>Junction-to-Ambient<br>12.5<br>–––<br>Junction-to-Ambient<br>20<br>–––<br>Junction-to-Case<br>–––<br>1.6<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>Linear DeratingFactor<br>0.022<br>~~I~~<br>~~a~~<br>~~**a**a~~<br>~~a~~|W/°C<br>°C/W|



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100<br>D = 0.50 ES Se ee rem |<br>10 ( 0.20 AA<br>Al<br>0.10<br>SS 0.05 ee ee eT | |<br>1 P E 0.02 (rr cn eer TT rT<br>0.01<br>Pe | | 2 || R1 R1 R2 R2 R3R3 || Ri (°C/W)     τ i (sec) ill<br>0.1 τ J τ J τ A τ A 2.773        0.00418<br>— ———_- τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 ——_—Ci‘e 24.841     0.053914<br>Ci=  τ i / Ri 17.387     8.86912<br>ee ee 0 || Ci=  τ i / Ri Co HI<br>0.01 SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0 | || || | 2. Peak Tj = P dm x Zthja + Tc il<br>a ee eee Hill<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Used double sided cooling , mounting pad with large heatsink. (0) R θ is measured at TJ of approximately 90°C . Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

@ Surface mounted on 1 in. square Cu (still air). 

© Mounted to a PCB with small clip heatsink (still air) 

© Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

www.irf.com 

3 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>4.0V<br>100 3.5V<br>3.0V<br>2.8V<br>BOTTOM 2.5V<br>10<br>2.5V<br>1<br>≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>0.1 PT ET ll<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>2.0<br>ID = 34AD = 34A= 34A<br>D eu<br>ELLELLE<br>1.5 RETEnnanEnnan<br>VGS = 10V<br>VGS = 4.5V<br>1.0 T TT TTT TTT<br>0.5 PETET TELET TELE TELE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>5.0V 5.0V<br>100 4.5V 4.5V<br>4.0V 4.0V<br>3.5V 100 3.5V<br>3.0V 3.0V<br>10 2.8V 2.8V<br>BOTTOM 2.5V BOTTOM 2.5V<br>1 10<br>0.1<br>2.5V<br>2.5V 1<br>0.01<br>≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.001 Pr FF 0.1 PT ET ll<br>0.1 1 10 100 1000 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics Fig 5.   Typical Output Characteristics<br>1000 2.0<br>VDS = 15V ID = 34AD = 34A= 34A<br>≤ 60µs PULSE WIDTH<br>100 = D eu<br>ELLELLE<br>—+— 1.5 RETEnnanEnnan<br>TJ = 150°C AT i VGS = 10V<br>10 TJ = 25°C VGS = 4.5V<br>TJ = -40°C<br>1.0<br>1<br>e e oe T TT TTT TTT<br>0.1 |eeVii [ee][ 2] ee ee 0.5 PETET TELET TELE TELE<br>1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics Fig 7.   Normalized On-Resistance vs. Temperature<br>100000 20<br>VGS   = 0V,       f = 1 MHZ T = 25°C<br>Ciss   = C gs + Cgd,  C ds SHORTED J<br>Crss   = C gd  16 Vgs = 3.5V<br>e Coss   = Cds + Cgd ee wea Vgs = 4.0V<br>Vgs = 4.5V<br>10000 Vgs = 5.0V<br>S Sses Ciss sern 12 | Vgs = 8.0V<br>Vgs = 10V<br>E E f e/)<br>Coss 8<br>ee e ll a HYi, 5<br>1000<br>C<br>rss<br>4<br>PPEee eeee — aa—— ——=<br>100 0<br>1 10 100 0 40 80 120 160 200<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br>) Ω<br>Typical RDS(on) (m<br>ID, Drain-to-Source Current  (A)<br>ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance Vs. Drain Current and Gate Voltage 

**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

www.irf.com 

4 

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1000<br>100 T  = 150°C<br>J<br>TJ = 25°C PSA<br>TJ = -40°C<br>10<br>1<br>VGS = 0V<br>0<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, Source-to-Drain Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100 A PR Sa 100 µse c |<br>10<br>1 ms ec<br>1<br>DC<br>10ms ec<br>TA = 25°C<br>0.1<br>T  = 150°C<br>J<br>Single Pulse<br>0.01<br>0.01 0.10 1.00 10.00 100.00<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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Fig11.   Maximum Safe Operating  Area<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
200<br>180<br>T _T.<br>160<br>S r<br>140<br>T S<br>120<br>e s<br>100<br>e e<br>80<br>a<br>60<br>e e<br>T FN<br>40<br>20<br>e e e d<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

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**----- Start of picture text -----**<br>
3.0 f a can<br>2.5<br>Pree |<br>S SR<br>2.0<br>BS<S228<br>ID = 100µA CSR<br>1.5<br>ID = 250µA Lb ISSN<br>ID = 1.0mA<br>1.00.5 ID = 1.0A PPT]PT] yyy.PS<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Typical VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

**==> picture [210 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
900<br>T TL ID<br>800<br>TOP        2.74A<br>700 C LE                3.70A<br>BOTTOM   27A<br>600 V T<br>P YLE<br>500400 T IWEEL ELL<br>300 S ONSEEEEEE<br>200<br>C ARNE<br>100 T EREST<br>0 PEELE SSO<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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**==> picture [451 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**Fig 15b.** Gate Charge Waveform 

**==> picture [190 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>zak 20V<br>t 0.01 Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
+<br>-<br>Ht Ves ≤ 1<br>≤ 0.1 %<br>ButyFactor<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>+ tp -><br>fal<br>yt<br>/ \<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>VDS<br>90%<br>|<br>10% /\_<br>VGS<br>NO<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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**==> picture [415 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T ——— Period D = —<br>+ P.W. Period<br>) [©)]    •  Circuit Layout Considerations V ttx GS=10V<br> •<br>-  •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>® - 8 = Current Transformer - ® + Current r Current ™= di/dt /<br>00 ® D.U.T. VDS Waveform Diode Recoverydv/dt \ ny<br>. VDD<br>•   Re-Applied<br>•   Driver same type as D.U.T. ** + Voltage Body Diode  Forward Drop<br>Re ( a4 •   dv/dt controlled by Rg Vpp - Inductor Curent im<br>•<br>D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @)<br>**----- End of picture text -----**<br>


## **Fig 18.** 

## for HEXFET ® Power MOSFETs 

**==> picture [215 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.90 G = GATE<br>x4 D = DRAIN<br>0.75 S = SOURCE<br>1.45<br>x2<br>7<br>D 7 S D<br>-<br>G<br>Z WAZ A.<br>S<br>D D<br>**----- End of picture text -----**<br>


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| —— DIMENSIONS METRIC IMPERIAL Pot CODE MIN MAX MIN MAX Pot A 6.25 6.35 0.246 0.250 Pot B 4.80 5.05 0.189 0.201 Pot C 3.85 3.95 0.152 0.156 D 0.35 0.45 0.014 0.018 a ee ee ee ee Pot E 0.68 0.72 0.027 0.028 Pot F 0.68 0.72 0.027 0.028 Pot G 1.38 1.42 0.054 0.056 Pot H 0.80 0.84 0.032 0.033 J 0.38 0.42 0.015 0.017 a ee ee ee ee Pot K 0.88 1.01 0.035 0.039 Pot L 2.28 2.41 0.090 0.095 Pot M 0.616 0.676 0.0235 0.0274 Pot R 0.020 0.080 0.0008 0.0031 a P 0.08 a 0.17 0.003 0.007 

## GATE MARKING 

## LOGO 

## PART NUMBER 

## BATCH NUMBER 

## DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

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8 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7" reel, order   IRF6715MTR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6715MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6715MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6715MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6715MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6715MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6715MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6715MTR1PBF|
|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>Ed|||||||
|STANDARD OPTION**(QTY 4800)**<br>a|||TR1 OPTION**(QTY 1000)**<br>a||||
||METRIC|IMPERIAL|IMPERIAL<br>METRIC||IMPERIAL||
|MIN<br>CODE<br>a<br>es|MIN<br>MAX<br>a<br>es|MIN<br>MAX<br>a<br>es|MAX<br>MIN<br>a<br>es|MAX<br>a<br>es|MIN<br>a<br>es|MAX<br>a<br>es|
|330.0<br>A<br>aa|330.0<br>N.C<br>a|12.992<br>N.C<br>SO|N.C<br>177.77<br>SO|N.C<br>SO|6.9|N.C|
|20.2<br>B<br>aCO|20.2<br>N.C<br>CO|0.795<br>N.C<br>CO|N.C<br>19.06<br>CO|N.C<br>CO|0.75<br>CO|N.C<br>CO|
|12.8<br>C<br>a<br>a|12.8<br>13.2<br>a<br>a|0.504<br>0.520<br>a|0.520<br>13.5|12.8|0.53|0.50|
|1.5<br>D<br>aSO|1.5<br>N.C<br>aSO|0.059<br>N.C<br>SO|N.C<br>1.5<br>SO|N.C<br>SO|0.059<br>SO|N.C<br>SO|
|100.0<br>E<br>aa|100.0<br>N.C<br>a|3.937<br>N.C<br>SO|N.C<br>58.72<br>SO|N.C<br>SO|2.31|N.C|
|N.C<br>F<br>a|N.C<br>18.4|N.C<br>0.724|0.724<br>N.C|13.50|N.C|0.53|
|12.4<br>G<br>aa<br>a|12.4<br>14.4<br>a<br>ee|0.488<br>0.567<br>ee<br>es|0.567<br>11.9<br>es<br>es|12.01<br>es|0.47|N.C|
|11.9<br>H<br>a|11.9<br>15.4<br>ee|0.469<br>0.606<br>ee<br>es|0.606<br>11.9<br>es<br>es|12.01<br>es|0.47|N.C|



LOADED TAPE FEED DIRECTION 

**==> picture [198 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
ot DIMENSIONS<br>METRIC IMPERIAL<br>NOTE: CONTROLLING<br>DIMENSIONS IN MM a CODE  MIN  MAX  MIN  MAX<br>a  A  7.90  8.10 0.311 0.319<br>a  B  3.90  4.10 0.154 0.161<br>a  C 11.90 12.30 0.469 0.484<br>a  D  5.45  5.55 0.215 0.219<br>a  E  5.10  5.30 0.201 0.209<br>a  F  6.50  6.70 0.256 0.264<br>a  G  1.50  N.C 0.059  N.C<br>=es  H  1.50  1.60 0.059 0.063<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2011 

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9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6715MTRPBF/power-mosfet-n-channel-25-v-180-a-1600-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6715mtrpbf/mosfet-n-ch-25v-180a-directfet/dp/2781113)
---

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