# Power MOSFET, N Channel, 25 V, 68 A, 4900 µohm, DirectFET SQ, Surface Mount

![Product image](https://novapart.co/image/farnell:2725893RL/)

**URL**: https://novapart.co/products/IRF6712STRPBF/power-mosfet-n-channel-25-v-68-a-4900-ohm
**SKU**: IRF6712STRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3890
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 36W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET SQ |
| Drain Source Voltage Vds | 25V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 68A |
| Drain Source On State Resistance | 4900µohm |
| Gate Source Threshold Voltage Max | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725893RL/)

Typical values (unless DirectFET otherwise specified) Power MOSFET 

e RoHS Compliant and Halogen Free 0) ~~EE~~ Low Profile (<0.7 mm) **VDSS VGS RDS(on) RDS(on)** ~~:~~ Dual Sided Cooling Compatible ~~|~~ 25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V Ultra Low Package Inductance **Qg  tot Qgd Qgs2 Qrr Qoss Vgs(th)** Optimized for High Frequency Switching ~~>~~ 12nC 4.0nC 1.7nC 14nC 10nC 1.9V Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses . Compatible with existing Surface Mount Techniques : a1 @ ° 100% Rg tested DirectFET " ISOMETRIC 

Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) **SQ** SX ST MQ MX MT MP ~~|~~ **Description** The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge  to minimize losses . 

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Base Part Number Package Type Standard Pack Orderable Part Number<br>Form Quantity<br>IRF6712SPbF DirectFET Small Can Tape and Reel 4800 IRF6712STRPbF<br>Tape and Reel 1000 IRF6712STR1PbF<br>Absolute Maximum Ratings<br>Parameter Max. Units<br>VDS Drain-to-Source Voltage 25 V<br>VGS eea Gate-to-Source Voltage ee  ±20<br>ID @ TA = 25°C Continuous Drain Current, VGS @ 10V  17<br>ID @ TA = 70°C © Continuous Drain Current, VGS @ 10V  13 A<br>ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  68<br>a<br>IDM Pulsed Drain Current  130<br>a<br>EAS Single Pulse Avalanche Energy 13 mJ<br>= IAR © Avalanche Current 13 A<br>12 14.0<br>10 ID = 17A 12.0 I D = 13A V DS = 20V<br>8 HA 10.0 — VDS= 13V TT id<br>6 ERNE PT ANT]CM T J  = 125°C TTT 8.0 | |ot 7SZ|<br>6.0<br>4 HPN SEE OR a<br>4.0<br>2 HE T J  = 25 PREETI °C a a<br>2.0<br>0 aaa EP E LEE E EELL 0.0 EYYiteit|ft | | | |<br>2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 5 10 15 20 25 30 35<br>VGS, Gate -to -Source Voltage  (V)  QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>)<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance Vs. Gate Voltage 

Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. 

Surface mounted on 1 in. square Cu board, steady state. 

**Fig 2.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.14mH, RG = 25, IAS = 13A. 

IRF6712SPbF ~~—~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~es~~|25<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V,ID= 250μA<br>~~es~~|
|VDSS/TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~<br>~~eee~~|18<br>~~es~~<br>~~eee~~|–––<br>~~es~~<br>~~eee~~|mV/°C<br>~~es~~<br>~~Ol~~|Reference to 25°C,ID= 1mA<br>~~es~~<br>~~eee~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~ee~~|3.8<br>~~es~~<br>~~ee~~<br>~~eee~~<br>~~||~~|4.9<br>~~es~~<br>~~ee~~<br>~~eee~~<br>~~|~~|m<br>~~es~~<br>~~ee~~<br>~~Ol~~|VGS= 10V,ID= 17A<br>~~es~~<br>~~ee~~<br>~~eee~~<br>~~@~~|
|||–––<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~ee~~|6.7<br>~~ee~~<br>~~eee~~<br>~~||~~|8.7<br>~~ee~~<br>~~eee~~<br>~~|~~||VGS= 4.5V,ID= 13A<br>~~ee~~<br>~~eee~~<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~<br>~~ee~~|1.4<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~ee~~<br>~~ee~~|1.9<br>~~ee~~<br>~~eee~~<br>~~| |~~<br>~~ee~~|2.4<br>~~ee~~<br>~~eee ~~<br>~~|~~<br>~~ee~~|V<br>~~ee~~<br> ~~Ol ~~|VDS= VGS, ID= 50μA<br>~~ee~~<br> ~~eee~~<br>~~@~~|
|GS(th)<br>VGS(th)/TJ|Gate Threshold Voltage Coefficient<br>~~es~~|–––<br>~~es~~<br>~~ee~~|-6.1<br>~~es~~|–––<br>~~es~~|mV/°C<br>~~es~~||
|GS(th)<br>IDSS<br>~~———~~|Drain-to-Source Leakage Current<br>~~Se~~<br>~~———~~|–––<br>~~ee~~<br>~~Se~~<br>~~|~~|–––<br>~~Se~~<br>~~|~~|1.0<br>~~Se~~<br>|μA<br>~~Se~~<br>~~| _———~~|VDS= 25V,VGS= 0V<br>~~Se~~|
|||–––<br>~~Se~~<br>~~|~~|–––<br>~~Se~~<br>~~||~~|150<br>~~Se~~<br>~~|~~||VDS= 25V,VGS= 0V,TJ= 125°C<br>~~Se~~<br>~~_———~~|
|IGSS<br>~~———~~|Gate-to-Source Forward Leakage<br>~~Se~~<br>~~———~~<br>~~|~~|–––<br>~~Se~~<br>~~|~~<br>~~|~~|–––<br>~~Se~~<br>~~||~~<br>|100<br>~~Se~~<br>~~|~~<br>|nA<br>~~Se~~<br>~~| _———~~|VGS= 20V<br>~~Se~~<br>~~_———~~|
||Gate-to-Source Reverse Leakage<br>~~———~~<br>~~|~~|–––<br><br>~~|fT~~|–––<br>~~|~~<br>~~fT~~|-100<br>~~|~~<br>~~fT~~<br>~~Ge~~||VGS= -20V<br>~~_———~~|
|gfs<br>~~———~~|Forward Transconductance<br>~~———~~<br>~~|~~<br>~~es~~|40<br><br>~~|~~<br>~~es~~<br>~~ee~~|–––<br>~~|~~<br><br>~~es~~<br>~~ee~~|–––<br>~~|~~<br><br>~~es~~<br>~~Ge~~|S<br>~~| _———~~<br>~~es~~|VDS= 13V,ID= 13A<br>~~_———~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|12<br>~~es~~<br>~~ee~~<br>~~ee~~|18<br>~~es~~<br>~~Ge~~<br>~~ee~~|nC<br>~~es~~<br>~~es~~|See Fig. 15<br>VDS= 13V<br>ID= 13A<br>VGS= 4.5V<br>~~es~~|
|g<br>Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.9<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|gs1<br>Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|1.7<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|gs2<br>Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|4.0<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|gd<br>Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~es~~|3.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|godr<br>Qsw|Switch Charge(Qgs2+ Qgd)<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~es~~|5.8<br> ~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|||
|Qoss|gs2gd<br>Output Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~sf~~|10<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~sf~~|–––<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~sO~~|nC<br>~~ee~~<br>~~es~~<br>~~sO~~|VDS= 16V,VGS= 0V<br>~~ee~~|
|RG|Gate Resistance<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~es~~<br>~~sf~~|1.7<br>~~es ~~<br>~~es~~<br>~~sf~~|3.0<br> ~~es~~<br>~~es~~<br>~~sO~~|<br>~~es~~<br>~~es~~<br>~~sO~~|~~es~~|
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~sf~~<br>~~ee~~<br>~~ee~~|11<br>~~es~~<br>~~sf~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~sO~~<br>~~ee~~<br>~~ee~~|ns<br>~~es~~<br>~~sO~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|RG= 1.8<br>See Fig. 17<br>ID= 13A<br>VDD= 13V, VGS= 4.5V<br>~~es~~<br>@|
|d(on)<br>tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~sf~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|40<br>~~sf~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~sO~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|14<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|d(off)<br>tf|Fall Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|12<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|1570<br>~~ee ~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 13V|
|Coss|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|490<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|210<br>~~es~~|–––<br>~~es~~|||



@ Pulse width  400μs; duty cycle  2%. 

IRF6712SPbF 

## **Absolute Maximum Ratings** 

|PD @TA= 25°C<br>PD @TA= 70°C<br>PD @TC= 25°C<br>TP<br>TJ<br>TSTG|**Parameter**<br>Power Dissipation<br>Power Dissipation<br>Power Dissipation<br>Peak SolderingTemperature<br>Operating Junction and<br>Storage Temperature Range<br>270<br>-40  to + 150<br>**Max.**<br>36<br>2.2<br>1.4<br>~~TO™~—“—SC“(‘(RSNNNNNNNSsSdUsa SSSSOSSCSC“C‘“‘SUCS~~<br>~~Oe~~<br>~~ane~~<br>~~ee~~||**Units**<br>W<br>°C|
|---|---|---|---|
|**Thermal Resistance**||||
||**Parameter**<br>**Typ.**<br>**Max.**||**Units**|
|RJA<br>RJA<br>RJA<br>RJC|Junction-to-Ambient<br>–––<br>58<br>Junction-to-Ambient<br>12.5<br>–––<br>Junction-to-Ambient<br>20<br>–––<br>Junction-to-Case<br>–––<br>3.5<br>~~I~~<br>TOt~“—=S*SCSCSOODSCOC~CCCOCOCOTTT..<br>~~CYC~~<br>~~CSS~~<br>~~a~~<br>Tt~“‘C;tCODSCOC*C*C“‘“CSNSCOCOCOCOCOC‘“‘(‘“(“((N#(NNNWCSCNNCNSCNCWSCNSSC‘CONNONCOC#*S||°C/W|
|RJ-PCB|Junction-to-PCB Mounted<br>1.0<br>–––<br>Linear DeratingFactor<br>0.017<br>~~a~~<br>~~©Se~~||W/°C|



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100<br>D = 0.50<br>reCEEScere HTH<br>10 eee 0.20 cement so | |<br>0.10<br>0.05<br>1 — 0.02 an een R 1R1 R 2R2 R 3R3 R 4R4 R 5R5 es Ri 1.(  ee 6°C/W1955 ) ee 0.000i (sec12 ee 6)<br>=ptaee 0.01 era ie J  J1 pe  1  2 2 pepe 3 3 4 4 5 5 AA S| | | 2.14056     0.001354 22.2887     0.375850 ||<br>0.1 LZ | Ci tT Ci= = iRiiRi TT 7 a 20.0457      7.41 ||<br>a a | ee | ee ee | 11.9144      99 al<br>AHR HH HE HE A<br>0.01 SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>er ee eel 2. Peak Tj = P dm x Zthja + Tc mut<br>~PEE || CCEeeECT ecCTcrCTIcc Sama Hil<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Used double sided cooling , mounting pad with large heatsink. (0) Ris measured at TJ of approximately 90°C. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

©) Surface mounted on 1 in. square Cu (still air). 

© Mounted to a PCB with small clip heatsink (still air) 

(©) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

IRF6712SPbF 

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1000<br>60μs PULSE WIDTH VGS<br>Tj = 25°C TOP           10V<br>5.0V<br>100 4.5V<br>4.0V<br>3.5V<br>3.0V<br>2.8V<br>10 BOTTOM 2.5V<br>1<br>0.1 2.5V<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>VDS = 15V<br>60μs PULSE WIDTH<br>100<br>T  = 150°C<br>J<br>T  = 25°C<br>J<br>10 T = -40°C<br>J<br>1<br>0.1<br>1 2 3 4 5<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current  (A)<br>**----- End of picture text -----**<br>


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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>oss   ds  gd<br>C iss<br>1000<br>C<br>oss<br>Crss<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>60μs PULSE WIDTH VGS<br>Tj = 150°C TOP           10V5.0V<br>4.5V<br>4.0V<br>3.5V<br>3.0V<br>100 2.8V<br>BOTTOM 2.5V<br>10<br>2.5V<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Output Characteristics<br>2.0<br>I = 17A<br>D<br>1.5 V GS = 10V<br>VGS = 4.5V<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>25<br>T = 25°C<br>J<br>Vgs = 4.0V<br>20 Vgs = 4.5V<br>Vgs = 5.0V<br>Vgs = 10V<br>15<br>10<br>5<br>0<br>0 50 100 150<br>ID, Drain Current (A)<br>Fig 9.    Typical On-Resistance Vs.<br> Drain Current and Gate Voltage<br>ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>)<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

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IRF6712SPbF ~~Cd~~ 

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1000<br>VGS = 0V<br>100<br>10<br>T = 150°C<br>J<br>T = 25°C<br>J<br>1 TJ = -40°C<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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70<br>60<br>SLL<br>50<br>CISC<br>40<br>Tf INCL<br>30<br>20 oe<br>IN<br>10<br>rE EN<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100μsec<br>10 10msec<br>1msec<br>1<br>TA = 25°C<br>T  = 150 ° C<br>J<br>Single Pulse<br>0.1<br>0.10 1.00 10.00 100.00<br>VDS, Drain-to-Source Voltage (V)<br>Fig11.   Maximum Safe Operating  Area<br>3.0<br>OTT  TT<br>2.5<br>eee<br>ESSagnan<br>2.0<br>ID = 50μA<br>ID = 100μA<br>1.5 ID = 250μA BSSN Za<br>ID = 1.0mA<br>CBRN<br>ID = 1.0A<br>1.0 PFT TNS\<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>Typical VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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60<br>ID<br>TOP      3.8A<br>50<br>5.4A<br>BOTTOM 13A<br>40 coe<br>30<br>BNERREEEEE<br>20<br>NNT<br>10<br>PSN<br>| RSS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

IRF6712SPbF ~~|~~ 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>S Vgs(th)<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**Fig 15b.** Gate Charge Waveform 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>: 20V tt<br>t 0.01<br>p<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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+<br>-<br><br><br>**----- End of picture text -----**<br>


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V(BR)DSS<br>+ tp -><br>/<br>y |i<br>yt<br>/ |<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>VDS<br>90% js<br>|<br>|<br>10% | /\ |<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

IRF6712SPbF 

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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T ——— Period D = —<br>+ P.W. Period<br>) [©)]  Circuit Layout Considerations V t t GS x =10V<br><br>-  CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>° - B 1 - ® + Current r Current di/dt NN<br>00 @ D.U.T. VDS Waveform Diode Recoverydv/dt \ ><br>. VDD<br> Re-Applied<br> Driver same type as D.U.T. ** + Voltage Body Diode  Forward Drop<br>Re (a  dv/dt controlled by Rg Vp p - Inductor Curent im<br><br>D.U.T. - Device Under Test e s ee<br>Ripple   5% ISD<br>Isp controlled by Duty Factor "D" @<br>**----- End of picture text -----**<br>


## **Fig 18.** 

## for HEXFET ® Power MOSFETs 

**==> picture [329 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>x4 D = DRAIN<br>0.55 S = SOURCE<br>0.95<br>lO Z (4<br>D D<br>a f ' 1 E4 4<br>G S<br>EE . : -<br>D D<br>LL O O YA oO<br>**----- End of picture text -----**<br>


IRF6712SPbF ~~|~~ 

## DirectFET ™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [126 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Po DIMENSIONS<br>a METRIC ee IMPERIAL<br>CODE MIN MAX  MIN  MAX<br>|  A | 4.75 | 4.85 | 0.187 0.191<br>a ee ee ee ee<br> B 3.70 3.95 0.146 0.156<br>| | |<br> C 2.75 2.85 0.108 0.112<br>a ee ee ee ee<br> D 0.35 0.45 0.014 0.018<br>| | |<br> E 0.48 0.52 0.019 0.020<br>a ee ee ee ee<br> F 0.78 0.82 0.031 0.032<br>| | |<br> G 0.88 0.92 0.035 0.036<br>a ee ee ee ee<br> H 0.78 0.82 0.031 0.032<br>| | |<br> J N/A N/A N/A N/A<br>a ee ee ee ee<br> K 0.93 0.97 0.037 0.038<br>| | |<br> L 2.00 2.10 0.079 0.083<br>a ee ee ee ee<br> M 0.616 0.676 0.0235 0.0274<br>| | |<br> R 0.020 0.080 0.0008 0.0031<br>a ee ee ee ee<br> P 0.08 0.17 0.003 0.007<br>[| | | CUT<br>**----- End of picture text -----**<br>


## DirectFET ™ Part Marking 

Line above the last character of the date code indicates "Lead-Free" 

IRF6712SPbF 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm 

Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7" reel, order   IRF6712TR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7"<br>reel, order   IRF6712TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7"<br>reel, order   IRF6712TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7"<br>reel, order   IRF6712TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7"<br>reel, order   IRF6712TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7"<br>reel, order   IRF6712TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7"<br>reel, order   IRF6712TR1PBF|
|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>et||||||
|STANDARD OPTION**(QTY 4800)**<br>e<br>~~es~~<br>~~a~~||**(QTY 4800)**<br>TR1 OPTION**(QTY 1000)**<br>es<br>~~es~~<br>||||
|METRIC<br>S<br>~~a~~|METRIC<br>IMPERIAL<br>S<br>~~es~~<br>|IMPERIAL<br>METRIC<br>S~~e~~<br>~~es~~<br>||IMPERIAL<br>~~e~~<br>||
|MIN<br>CODE<br>MAX<br>~~aee~~|MAX<br>MIN<br>MAX<br>~~es~~<br>~~ee~~|MAX<br>MAX<br>MIN<br>~~es~~<br>~~ee~~|MAX<br>~~ee~~|MIN<br>MAX<br>~~ee~~|MAX<br>~~ee~~|
|330.0<br>N.C<br>~~aee~~<br>~~aes~~|N.C<br>12.992<br>N.C<br>~~es~~<br>~~ee~~<br>~~es~~|N.C<br>N.C<br>177.77<br>~~es~~<br>~~ee~~<br>~~es~~|N.C<br>~~ee~~<br>~~es~~|6.9<br>N.C<br>~~ee~~<br>~~es~~|N.C<br>~~ee~~<br>~~es~~|
|20.2<br>N.C<br>~~aes~~<br>~~ass~~<br>~~a~~|N.C<br>0.795<br>N.C<br>~~es~~<br>~~ss~~<br>~~es~~|N.C<br>N.C<br>19.06<br>~~es~~<br>~~ss~~<br>~~es~~|N.C<br>~~es~~<br>~~ss~~|0.75<br>N.C<br>~~es~~<br>~~ss~~|N.C<br>~~es~~<br>~~ss~~|
|12.8<br>13.2<br>~~ass~~<br>~~a~~|13.2<br>0.504<br>0.520<br>~~ss~~<br>~~es~~|0.520<br>12.8<br>13.5<br>~~ss~~<br>~~es~~|12.8<br>~~ss~~|0.53<br>0.50<br>~~ss~~|0.50<br>~~ss~~|
|1.5<br>N.C<br>~~a~~<br>~~a~~|C<br>0.059<br>N.C<br>~~es~~|N.C<br>N.<br>1.5<br>~~es~~|N.C|0.059<br>N.C|N.C|
|100.0<br>N.C<br>~~a~~<br>~~a~~|C<br>3.937<br>N.|N.C<br>N.<br>58.72|N.C|2.31<br>N.C|N.C|
|N.C<br>18<br>~~a~~<br>~~a~~|8.4<br>N.C<br>0|0.724<br>13<br>N.C|3.50|N.C<br>0.53|0.53|
|12.4<br>14.4<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~a~~|14.4<br>0.488<br>0.567<br>~~ee~~<br>~~es~~|0.567<br>12.<br>11.9<br>~~es~~<br>es|12.01|0.47<br>N.C|N.C|
|11.9<br>15.4<br>~~a~~<br>~~ee~~<br>~~a~~|15.4<br>0.469<br>0.606<br>~~ee~~<br>~~es~~|0.606<br>12.01<br>11.9<br>~~es~~<br>es|12.01|0.47<br>N.C|N.C|



Loaded Tape Feed Direction 

~~PO~~ DIMENSIONS NOTE: CONTROLLING METRIC IMPERIAL DIMENSIONS IN MM ~~eeaa~~ CODE A MIN 7.90 ~~eeee~~ MAX 8.10 0.311 MIN 0.319 MAX ~~a~~ B ~~ee~~ 3.90 4.10 0.154 0.161 ~~a~~ C 11.90 12.30 0.469 0.484 ~~a~~ D 5.45 5.55 0.215 0.219 ~~a~~ E ~~ee~~ 4.00 4.20 0.158 0.165 ~~a~~ F 5.00 5.20 0.197 0.205 ~~a~~ G ~~ee~~ 1.50 N.C 0.059 N.C ~~a~~ H 1.50 1.60 0.059 0.063 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6712STRPBF/power-mosfet-n-channel-25-v-68-a-4900-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6712strpbf/mosfet-n-ch-25v-68a-directfet/dp/2725893RL)
---

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