# Power MOSFET, N Channel, 60 V, 67 A, 0.009 ohm, DirectFET MZ, Surface Mount

![Product image](https://novapart.co/image/farnell:2579989/)

**URL**: https://novapart.co/products/IRF6674TRPBF/power-mosfet-n-channel-60-v-67-a-0009-ohm
**SKU**: IRF6674TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0400
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 89W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.009ohm |
| Transistor Case Style | DirectFET MZ |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 67A |
| Drain Source On State Resistance | 0.009ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579989/)

97133 

## 97133 PDIRF6674TRPbF DirectFET 7 Power MOSFET , 

RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket : Optimized for Synchronous Rectification | Low Conduction Losses High Cdv/dt Immunity Dual Sided Cooling Compatible e Compatible with existing Surface Mount Techniques : O 

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RoHS Compliant<br>Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on)<br>Application Specific MOSFETs 60V max ±20V max 9.0mΩ@ 10V<br>Ideal for High Performance Isolated Converter Qg  tot Qgd   Vgs(th)<br>    Primary Switch Socket<br>24nC 8.3nC 4.0V<br>: Optimized for Synchronous Rectification | ——<br>Low Conduction Losses<br>High Cdv/dt Immunity<br>Dual Sided Cooling Compatible<br>e Compatible with existing Surface Mount Techniques  ® }] —<br>: O | re | GP<br>DirectFET "  ISOMETRIC<br>MZ<br>Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) ®<br>SH SJ SP MZ MN<br>LS SD HY RD ND |<br>**----- End of picture text -----**<br>


## **Description** 

The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and  36V-60V input voltage range systems.  The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DCDC converters. 

## **Absolute Maximum Ratings** 

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sO Parameter Max. Units<br>a VDS  Q Drain-to-Source Voltage 60 V<br>cc VGS Gate-to-Source Voltage  ±20<br>ID @ TA = 25°C   Continuous Drain Current, VGS @ 10V  13.4<br>ID @ TA = 70°C Continuous Drain Current, VGS @ 10V  10.7 A<br>ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  67<br>pe<br>—— IDM Pulsed Drain Current  ne 134<br>pe<br>I EAS Single Pulse Avalanche Energy 98 mJ<br>IAS Avalanche Current 13.4 A<br>pe<br>50 14<br>ID = 13.4A 12 ID= 13.4A VDS= 48V<br>40 VDS= 30V<br>10<br>~ttit Pp eZ<br>30<br>8<br>tt tt ee a e<br>20 PN | | ft 6 a aa<br>TJ = 125°C<br>4<br>10<br>sss eee<br>2<br>TJ = 25°C<br>0 0<br>pt | Pt A re<br>4 6 8 10 12 14 16 0 10 20 30<br>VGS, Gate-to-Source Voltage (V)<br> QG  Total Gate Charge (nC)<br>)Ω<br>Typical  RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Typical  Total Gate Charge vs. Gate-to-Source Voltage 

® Click on this section to link to the appropriate technical paper. @® TC measured with thermocouple mounted to top (Drain) of part. @) Click on this section to link to the DirectFET Website. Repetitive rating;  pulse width limited by max. junction temperature. @ Surface mounted on 1 in. square Cu board, steady state.[©] Starting TJ = 25°C, L = 0.272mH, RG = 25Ω, IAS = 13.4A. 

www.irf.com 

1 

4/24/08 

**Electrical Characteristic @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|**Parameter**<br>~~i~~|**Min.**|**Typ.**<br>~~GO~~|**Max.**<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~i~~<br>~~es~~<br>|60<br>~~es~~<br>~~rs~~|–––<br>~~GO~~<br>~~es~~<br>~~DD~~|–––<br>~~GO~~<br>~~es~~<br>~~DD~~|V<br>~~GO~~<br>~~es~~<br>~~DD~~|VGS= 0V, ID= 250μA<br>~~es~~|
|ΔΒVDSS/ΔTJ<br>~~es~~<br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~rs~~|0.07<br>~~es~~<br>~~DD~~<br>~~GO~~|–––<br>~~es~~<br>~~DD~~<br>~~GO~~|V/°C<br>~~es~~<br>~~DD~~<br>~~GO~~|Reference to 25°C, ID= 1mA<br>~~es~~|
|RDS(on)<br>~~es~~<br>~~es~~<br>~~**e**~~|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~rs~~<br>~~**e**~~|–––<br>~~rs ~~<br>~~rs~~<br>~~**e**e~~|9.0<br> ~~DD~~<br>~~GO~~<br>~~nD~~<br>~~e~~|11<br>~~DD~~<br>~~GO~~<br>~~I~~<br>~~e~~|mΩ<br>~~DD~~<br>~~GO~~<br>~~O~~<br>~~e~~|VGS= 10V, ID= 13.4A<br>~~OK~~<br>~~e~~|
|VGS(th)<br><br>~~es~~<br>~~**e**~~|Gate Threshold Voltage<br>~~a~~<br>~~rs ~~<br>~~**e**~~|3.0<br> ~~rs~~<br>~~**e**e~~|4.0<br>~~GO~~<br>~~nD ~~<br>~~e~~|4.9<br>~~GO~~<br> ~~I ~~<br>~~e~~|V<br>~~GO~~<br> ~~O~~<br>~~e~~|VDS= VGS, ID= 100μA<br>~~OK~~<br>~~e~~<br>~~ee~~|
|ΔVGS(th)/ΔTJ<br>~~**e**~~<br>~~s~~|Gate Threshold Voltage Coefficient<br>~~**e**~~<br>~~es~~|–––<br>~~**e**e~~<br>~~s~~<br>~~rs~~<br>~~ee eee~~|-11<br>~~e~~<br>~~s~~<br>~~es~~<br>~~eee~~|–––<br>~~e~~<br>~~s~~<br>~~eee~~|mV/°C<br>~~e~~<br>~~s~~<br>~~eee~~||
|IDSS<br>~~**e**~~<br>~~s~~<br>~~ee~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~**e**~~<br>~~es~~<br>~~ee~~<br><br>~~s~~|–––<br>~~**e**e~~<br>~~s~~<br>~~rs ~~<br>~~ee~~<br>~~ee eee~~<br>~~a~~<br>|–––<br>~~e~~<br>~~s~~<br> ~~es~~<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>|20<br>~~e~~<br>~~s~~<br>~~ee~~<br>~~eee~~<br>|μA<br>~~e~~<br>~~s~~<br>~~ee~~<br>~~eee~~<br><br>~~een~~|VDS= 60V, VGS= 0V<br>~~e~~<br>~~ee~~<br>~~ee~~<br>~~PO~~<br>|
|||–––<br>~~ee~~<br>~~ee eee~~<br>~~a~~<br><br>~~cee~~<br>|–––<br>~~ee~~<br>~~eee~~<br>~~ee~~<br><br>~~ees~~<br>|250<br>~~ee~~<br>~~eee~~<br><br>~~een~~||VDS= 48V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~<br>~~PO~~<br><br>~~ee~~|
|IGSS<br>~~a ~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~**e**ens~~<br>~~s~~|–––<br>~~ee eee~~<br>~~a~~<br>~~ens~~<br>~~cee~~<br>|–––<br>~~eee~~<br>~~ee~~<br>~~ens~~<br>~~ees~~<br>|100<br>~~eee~~<br>~~ens~~<br>~~een~~|nA<br>~~eee ~~<br>~~ens~~<br>~~een~~|VGS= 20V<br> ~~ee~~<br>~~PO~~<br>~~ens~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br> ~~**e**ens~~<br>~~s~~<br>|–––<br>~~a ~~<br>~~ens~~<br>~~cee~~<br>~~es~~|–––<br> ~~ee~~<br>~~ens~~<br>~~ees~~<br>~~ee~~|-100<br>~~ens~~<br>~~een~~||VGS= -20V<br>~~PO~~<br>~~ens~~<br>~~ee~~<br>~~PO~~|
|gfs<br>~~es~~<br>~~es~~|Forward Transconductance<br>~~s ~~<br>~~i~~<br>|16<br>~~cee ~~<br> ~~es~~<br>|–––<br> ~~ees ~~<br>~~ee~~<br>~~GO~~<br>|–––<br> ~~een~~<br>~~GO~~<br>|S<br>~~een ~~<br>~~GO~~|VDS= 25V, ID= 13.4A<br> ~~ee~~<br>~~PO~~|
|Qg<br>~~es~~<br>~~es~~<br>~~es~~|Total Gate Charge<br> <br>~~i~~<br>~~es~~<br>|–––<br> ~~es ~~<br>~~es~~<br>~~es~~<br>|24<br> ~~ee~~<br>~~GO~~<br>~~es~~<br>~~ed~~<br>|36<br>~~GO~~<br>~~es~~<br>|nC<br>~~GO~~|See Fig. 15<br>ID= 13.4A<br>VGS= 10V<br>VDS= 30V<br>~~PO~~|
|Qgs1<br><br>~~es~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>~~i~~<br><br>~~ee~~|–––<br><br>~~es~~<br>~~ee~~|5.4<br>~~GO~~<br><br>~~ed~~<br>~~ee~~|–––<br>~~GO~~<br><br>~~ee~~|||
|Qgs2<br>~~es~~<br>~~es~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br>~~ee~~<br>~~es~~<br>|–––<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~es~~<br>|1.9<br> ~~ed~~<br>~~ee~~<br>~~es~~<br>~~ed~~<br>|–––<br>~~ee~~<br>~~es~~<br>|||
|Qgd<br>~~es~~|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~|8.3<br>~~ed~~<br>~~es~~|12<br>~~es~~|||
|Qgodr<br>~~es~~<br>~~es~~<br>~~es~~|Gate Charge Overdrive<br>~~es~~<br>~~es~~<br>|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|8.4<br> ~~ed~~<br>~~es~~<br>~~es~~<br>~~ed~~<br>|–––<br>~~es~~<br>~~es~~<br>|||
|Qsw<br>~~es~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>~~**e**s~~|–––<br>~~es~~<br>~~s~~|10.2<br>~~ed~~<br>~~s~~|–––<br>~~s~~|||
|Qoss<br>~~es~~<br>~~es~~<br>~~Rs~~|Output Charge<br>~~**e**s~~|–––<br>~~es ~~<br>~~s~~<br>~~rs~~|14<br> ~~ed~~<br>~~s~~<br>~~s~~<br>~~DD~~|–––<br>~~s~~<br>~~s~~<br>~~DD~~|nC<br>~~s~~<br>~~DD~~|VDS= 16V, VGS= 0V<br>~~s~~|
|RG<br><br>~~es~~<br>~~Rs~~<br>~~es~~|Gate Resistance<br>~~**e**s~~<br>~~GD~~<br>~~es~~|–––<br>~~s~~<br>~~rs~~<br>~~GD~~|1.0<br>~~s~~<br>~~DD~~<br>~~QO~~|–––<br>~~s~~<br>~~DD~~<br>~~QO~~|Ω<br>~~DD~~|C|
|td(on)<br>~~Rs~~<br>~~es~~|Turn-On DelayTime<br>~~GD~~<br>~~es~~|–––<br>~~rs ~~<br>~~GD~~|7.0<br> ~~DD~~<br>~~QO~~|–––<br>~~DD~~<br>~~QO~~|ns<br>~~DD~~|RG= 6.2Ω<br>VDD= 30V, VGS= 10V<br>ID= 13.4A<br>C|
|tr<br>~~es ~~<br>~~es~~<br>~~es~~|Rise Time<br>~~GD~~<br> ~~es~~<br>~~es~~<br>|–––<br>~~GD ~~<br>~~es~~<br>~~es~~<br>|12<br> ~~QO~~<br>~~es~~<br>~~ed~~<br>|–––<br>~~QO~~<br>~~es~~<br>|||
|td(off)<br>~~es~~|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~es~~|12<br>~~ed~~<br>~~es~~|–––<br>~~es~~|||
|tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time<br>~~es~~<br>~~es~~<br>|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|8.7<br> ~~ed~~<br>~~es~~<br>~~es~~<br>~~ed~~<br>|–––<br>~~es~~<br>~~es~~<br>|||
|Ciss<br>~~es~~|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~|1350<br>~~ed~~<br>~~es~~|–––<br>~~es~~|pF|VDS= 25V<br>VGS= 0V<br>ƒ= 1.0MHz|
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~es~~<br>~~es~~<br>|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|390<br> ~~ed~~<br>~~es~~<br>~~es~~<br>~~ed~~<br>|–––<br>~~es~~<br>~~es~~<br>|||
|Crss<br>~~es~~|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~|105<br>~~ed~~<br>~~es~~|–––<br>~~es~~|||
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|1580<br> ~~ed~~<br>~~es~~<br>~~ed~~|–––<br>~~es~~||VGS= 0V, VDS= 1.0V, f=1.0MHz<br>~~PO~~<br>~~PO~~|
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~es ~~|–––<br> ~~es ~~|290<br> ~~ed~~|–––||VGS= 0V, VDS= 48V, f=1.0MHz<br>~~PO~~<br>~~PO~~|



> Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. 

www.irf.com 

2 

|**Absolute Maximum Ratings**<br>**Parameter**<br>PD@TA= 25°C<br>Power Dissipation<br>3.6<br>**Max.**<br>~~RsQe~~<br>~~a~~|~~Qe~~|**Units**<br>W<br>~~Qe~~|
|---|---|---|
|PD@TA= 70°C<br>Power Dissipation<br>2.3<br>~~a~~|||
|PD@TC= 25°C<br>Power Dissipation<br>89|||
|TP<br>Peak SolderingTemperature<br>270<br>~~a~~||°C|
|TJ<br>Operating Junction and<br>-40  to + 150|||
|TSTG<br>Storage Temperature Range|||
|**Thermal Resistance**|||
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJA<br>Junction-to-Ambient<br>–––<br>35<br>RθJA<br>Junction-to-Ambient<br>12.5<br>–––<br>RθJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W<br>RθJC<br>Junction-to-Case<br>–––<br>1.4<br>RθJ-PCB<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>~~nsQQ~~<br>~~RQ~~<br>~~esXQ~~<br>~~es©~~<br>~~QQ~~<br>~~es~~|||
|0.001<br>0.01<br>0.1<br>1<br>10<br>Thermal Response ( Z thJC )<br>0.20<br>0.10<br>D = 0.50<br>0.02<br>0.01<br>~~0.05~~<br>SINGLE PULSE<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj= Pdm x Zthjc + Tc<br>~~Ri(°C/W) τι(sec)~~<br>0.023002 0.000008<br>0.269754 0.000072<br>0.770575 0.001409<br>0.337715 0.005778<br>τJ<br>τJ<br>τ1<br>τ1<br>τ2<br>τ2<br>τ3<br>τ3<br>~~R1~~<br>R1<br>~~R2~~<br>R2<br>~~R3~~<br>R3<br>Ci<br>i/Ri<br>Ci=τi/Ri<br>τ<br>τC<br>τ4<br>τ4<br>R4<br>R4<br>me ee em<br>ee<br>==s=S---—<br>PL ~~EP~~<br>errr<br>ii<br>|LL<br>Po<br>eae<br>~~EE~~<br>ee ~~"el~~<br>~~| tT IT~~<br>P| ~~**e**ry) pe ee~~<br>—<br>e ae<br>|<br>|<br>~~L~~<br>~~cat~~<br>~~7~~<br>~~7~~<br>~~7~~<br>p~~ao~~<br>~~I~~<br>~~HH~~<br>|<br>Oe<br>~~|~~<br>~~PT EE EEE Et~~<br>~~il~~|||
|1E-006<br>1E-005<br>0.0001<br>0.001<br>0.01<br>0.1|||
|t1 , Rectangular Pulse Duration (sec)|||



**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. Used double sided cooling, mounting pad with large heatsink. 

Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

Rθ is measured at 

® Surface mounted on 1 in. square Cu board  (still air). 

© Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 

www.irf.com 

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100<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>10 V a BOTTOM 6.0V<br>a a<br>6.0V<br>S SS<br>> a lae<br>Ae<br>≤60μs PULSE WIDTH<br>Tj = 25°C<br>1 PT A<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>a<br>100<br>onn<br>FUE TJ = 150°CJ = 150°C = 150°C LE<br>TJ = 25°CJ = 25°C = 25°C<br>10<br>TJ = -40°CJ = -40°C = -40°C<br>1<br>VDS = 10VDS = 10V= 10V<br>≤60μs PULSE WIDTH60μs PULSE WIDTH<br>Ei<br>0.1<br>2.0 4.0 6.0 8.0 10.0 12.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics<br>100000<br>= VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>10000 Cc C oss   = C ds  + C gd<br>Ciss<br>1000<br>Coss<br>Sern<br>p—~ —<br>100 Crss<br>10 LEARN ELL<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>)(Α(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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1000<br>a<br>100<br>onn<br>FUE TJ = 150°CJ = 150°C = 150°C LE<br>TJ = 25°CJ = 25°C = 25°C<br>10<br>TJ = -40°CJ = -40°C = -40°C<br>1<br>VDS = 10VDS = 10V= 10V<br>≤60μs PULSE WIDTH60μs PULSE WIDTH<br>Ei<br>0.1<br>2.0 4.0 6.0 8.0 10.0 12.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>6.0V<br>10 Ye, VGS<br>fo TOP           15V<br>10V<br>8.0V<br>W Za 7.0V<br>BOTTOM 6.0V<br>aaaFC<br>PL LTR EET<br>≤60μs PULSE WIDTH<br>Tj = 150°C<br>1 ET<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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2.0<br>ID = 13.4A<br>VGS = 10V<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

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50<br>TA= 25°C<br>40<br>ae<br>VGS = 7.0V<br>30 V GS  = 8.0V<br>VGS = 10V<br>VGS = 15V<br>20 ALrN |<br>10<br>0 PT tft<br>0 20 40 60 80 100<br>ID, Drain Current (A)<br>Typical  RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical On-Resistance vs. Drain Current 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100<br>1 00μ sec<br>10 TJ = 150°C 10<br>| Aff Ser<br>TJ = 25°C<br>1 ms ec<br>TJ = -40°C<br>AE Te<br>1 1<br>TC = 25°C 10msec<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>ub e} LaeSS Sli<br>0 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

**Fig11.** Maximum Safe Operating Area 

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14<br>12<br>10<br>8<br>PPLE ENE<br>6<br>Coo}<br>4<br>2 HERES)core<br>0<br>25 50 75 100 125 150<br>TJ , Ambient Temperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Ambient Temperature 

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**----- Start of picture text -----**<br>
5.0<br>4.5<br>4.0<br>caNGan<br>3.5 I D  = 250μA<br>ID = 100μA ESN<br>3.0<br>2.5 HEN<br>AOE<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

**==> picture [216 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>                 I D<br>TOP         4.5A<br>               9.3A<br>300 BOTTOM   26.8A<br>a,<br>200<br>At<br>100<br>NCE<br>TSN<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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**==> picture [227 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0<br>201 K S<br>“ a:<br>**----- End of picture text -----**<br>


## **Fig 15a.** Gate Charge Test Circuit 

**==> picture [183 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

**==> picture [130 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

**==> picture [176 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 15b.** Gate Charge Waveform 

**==> picture [204 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>VDS<br>90%<br>|<br>|<br>10% /\ |<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

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**==> picture [476 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period — — D = —— Period<br>) [@]    •  Circuit Layout Considerations lt V 1 GS=10V<br>| | -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>o - 8 L - ® + Current r Current di/dt /<br>00 ©) D.U.T. VDS Waveform Diode Recovery +<br>®5 dv/dt VDD<br>•   Re-Applied<br>Ro ) •   dv/dtDriver controlledsame type byas RgD.U.T. Vpp** + Voltage Body Diode  Forward Drop<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test es<br>(7) Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>* Use P-Channel Driver for P-Channel Measurements *** \Vgg = 5V for Logic Level Devices<br>** Reverse Polarity for P-Channel<br>Fig 18.  Diode Reverse Recovery Test Circuit for HEXFET ®  Power MOSFETs<br>**----- End of picture text -----**<br>


## DirectFET ™ Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

**==> picture [227 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
G=GATE<br>D=DRAIN<br>S=SOURCE<br>D D<br>S<br>G<br>S<br>SSG GA Yi<br>D D<br>**----- End of picture text -----**<br>


## Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

www.irf.com 

7 

## DirectFET Tl Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). 

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations 

|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|
||METRIC||IMPERIAL||
|CODE|MIN|MAX|MIN|MAX<br>MIN|
|A|6.25|6.35|0.246|0.250<br>0.246|
|B|4.80|5.05|0.189|0.201<br>0.189|
|C|3.85|3.95|0.152|0.156<br>0.152|
|D<br>E|0.35<br>0.68|0.45<br>0.72|0.027<br>0.014|0.018<br>0.028<br>0.027<br>0.014|
|F<br>G|0.68<br>0.93|0.72<br>0.97|0.027<br>0.037|0.028<br>0.027<br>0.038<br>0.037|
|H|0.63|0.67|0.025|0.026<br>0.025|
|J|0.28|0.32|0.011|0.013<br>0.011|
|K|1.13|1.26|0.044|0.050<br>0.044|
|L|2.53|2.66|0.100|0.105<br>0.100|
|M|0.59|0.70|0.023|0.028<br>0.023|
|N|0.03|0.08|0.001|0.001<br>0.003|
|P|0.08|0.17|0.003|0.007<br>0.003|



## DirectFET Tl Part Marking 

## GATE MARKING 

## LOGO 

## PART NUMBER 

## BATCH NUMBER DATE CODE 

Line above the last character of the date code indicates "Lead-Free" 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package 

www.irf.com 

8 

## DirectFET Tl Tape & Reel Dimension (Showing component orientation). 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6674MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6674MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6674MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6674MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6674MTR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"<br>reel, order   IRF6674MTR1PBF|
|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>|||||||
|STANDARD OPTION**(QTY 4800)**<br>es|||TR1 OPTION**(QTY 1000)**<br>es|||
|es|METRIC<br>es|IMPERIAL<br>es|METRIC<br>es|IMPERIAL<br>es||
|MIN<br>CODE<br>a|MIN<br>MAX<br>|MAX<br>MIN<br>|MAX<br>MIN<br>|MIN<br>MAX<br>|MAX<br>|
|330.0<br>A<br>aee|330.0<br>N.C<br>ee|N.C<br>12.992<br>ee|N.C<br>177.77<br>ee|6.9<br>N.C<br>ee|N.C<br>ee|
|20.2<br>B<br>ee|20.2<br>N.C<br>ee|N.C<br>0.795<br>ee<br>ee|N.C<br>19.06<br>ee|0.75<br>N.C<br>ee|N.C<br>ee|
|12.8<br>C<br>ee<br>ee|12.8<br>13.2<br>ee<br>ee|0.520<br>0.504<br>ee<br>ee<br>ee|12.8<br>13.5<br>ee<br>ee|0.53<br>12.8<br>ee<br>ee|0.50<br>ee<br>ee|
|1.5<br>D<br>ee|1.5<br>N.C<br>ee|N.C<br>0.059<br>ee<br>ee|N.C<br>1.5<br>ee|0.059<br>N.C<br>ee|0.059<br>N.C<br>ee|
|100.0<br>E<br>ee<br>=======——|100.0<br>N.C<br>ee<br>=======——|N.C<br>3.937<br>ee<br>ee<br>=======——|N.C<br>58.72<br>ee<br>=======——|2.31<br>N.C<br>ee<br>=======——|2.31<br>N.C<br>ee<br>=======——|
|N.C<br>F<br>=======——|N.C<br>18.4<br>=======——|0.724<br>N.C<br>=======——|13.50<br>N.C<br>=======——|N.C<br>13.50<br>=======——|0.53<br>=======——|
|12.4<br>G<br>=======——|12.4<br>14.4<br>=======——|0.567<br>0.488<br>=======——|12.01<br>11.9<br>=======——|0.47<br>12.01<br>=======——|N.C<br>=======——|
|11.9<br>H<br>=======——|11.9<br>15.4<br>=======——|0.606<br>0.469<br>=======——|12.01<br>11.9<br>=======——|0.47<br>12.01<br>=======——|N.C<br>=======——|



## LOADED TAPE FEED DIRECTION 

|||DIMENSIONS|DIMENSIONS|DIMENSIONS||
|---|---|---|---|---|---|
|||METRIC||IMPERIAL||
|NOTE: CONTROLLING<br>DIMENSIONS IN MM|CODE|MIN|MAX|MIN|MAX|
||A|7.90|8.10|0.311|0.319|
||B|3.90|4.10|0.154|0.161|
||C|11.90|12.30|0.469|0.484|
||D|5.45|5.55|0.215|0.219|
||E|5.10|5.30|0.201|0.209|
||F|6.50|6.70|0.256|0.264|
||G|1.50|N.C|0.059|N.C|
||H|1.50|1.60|0.059|0.063|



Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 4/08 

www.irf.com 

9 



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- [View this product on Novapart](https://novapart.co/products/IRF6674TRPBF/power-mosfet-n-channel-60-v-67-a-0009-ohm)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf6674trpbf/mosfet-n-ch-60v-67a-directfet/dp/2579989)
---

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