# Power MOSFET, N Channel, 80 V, 55 A, 0.015 ohm, DirectFET MZ, Surface Mount

![Product image](https://novapart.co/image/farnell:2579988/)

**URL**: https://novapart.co/products/IRF6668TRPBF/power-mosfet-n-channel-80-v-55-a-0015-ohm
**SKU**: IRF6668TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4400
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.01; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MZ |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 4.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579988/)

## IRF6668PbF IRF6668TRPbF 

|DirectFET<br>Power MOSFET<br> RoHs Compliant<br>e<br>o<br>™<br>@|
|---|
|Lead-Free (Qualified up to 260°C Reflow)<br> Application Specific MOSFETs<br>Ideal for High Performance Isolated Converter<br>Primary Switch Socket<br> Optimized for Synchronous Rectification<br> Low Conduction Losses<br>**VDSS**<br>**VGS**<br>80V max<br>±20V max<br>**RDS(on)**<br>12mΩ@ 10V<br>**Qg  tot**<br>**Qgd**<br>**Qgs2**<br>**Qrr**<br>**QossVgs(th)**<br>22nC<br>7.8nC<br>1.6nC<br>40nC<br>12nC<br>4.0V<br>e<br>~~= values=otherwise=~~|
|High Cdv/dt Immunity|
|Low Profile (<0.7mm)|
|Dual Sided Cooling Compatible|
|DirectFET<br>ISOMETRIC<br> Compatible with existing Surface Mount Techniques<br>e<br>®<br>:<br>~SS<br>MZ<br>™|
|Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details)<br>®|
|**Description**<br>SQ<br>SX<br>ST<br>MQ<br>MX<br>MT<br>**MZ**<br>~~A~~<br>~~SD SS~~|



The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI input voltage range systems.  The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies.  The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. 

## **Absolute Maximum Ratings** 

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a eG Parameter Max. Units<br>VDS Drain-to-Source Voltage 80 V<br>aNN VGS OO Gate-to-Source Voltage  ±20<br>ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  55<br>ST ID @ TC = 70°C Continuous Drain Current, VGS @ 10V  44 A<br>— IDM Pulsed Drain Current  ee 170 i<br>Pe<br>a EAS Single Pulse Avalanche Energy 24 mJ<br>a IAR Avalanche Current 23 A<br>60 12.0<br>ID = 12A ID= 12A<br>50 TT 10.0 T TT VDS= 64V TTT<br>40 8.0 VDS= 40V<br>| ot | E ERE ara<br>30 6.0<br>| ow | fT | P PT A<br>TJ = 125°C<br>20 ee ee 4.0 E RERREEY Zee<br>10 P| T Sp} J = 25°C 2.0 E pZeneeeee<br>0 | it , | [| Tt 0.0 ZAGER<br>4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 18 20 22 24<br> QG,  Total Gate Charge (nC)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 1.    Typical On-Resistance vs. Gate-to-Source  Voltage Fig 2.   Total Gate Charge vs.  Gate-to-Source Voltage<br>)Ω<br>Typical RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 2.** Total Gate Charge vs.  Gate-to-Source Voltage 

Notes: ®® TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. 

® TC measured with thermocouple mounted to top (Drain) of part.C measured with thermocouple mounted to top (Drain) of part. measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.088mH, RG = 25Ω, IAS = 23A. 

Click on this section to link to the appropriate technical paper. @ Click on this section to link to the DirectFET Website.[©] @ Surface mounted on 1 in. square Cu board, steady state. © 

www.irf.com 

1 

08/28/06 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~Re~~<br>~~a~~|**Parameter**<br>~~Ge~~<br>~~GO~~|**Min.**<br>~~GG~~<br>~~GO~~|**Typ.**<br>~~GG~~<br>~~GO~~|**Max. **<br>~~GG~~<br>~~GO~~|**Units**<br>~~GG~~<br>~~GO GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~Re~~<br>~~a~~<br>~~RR~~<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~Ge~~<br>~~GO~~<br>~~GG~~<br>|80<br>~~GG~~<br>~~GO~~<br>~~GG~~<br>|–––<br>~~GG ~~<br>~~GO~~<br>~~GG~~<br>~~G~~~~**G**~~<br>|–––<br> ~~GG~~<br>~~GO~~<br>~~GG~~<br>~~**G**~~|V<br>~~GG~~<br>~~GO GO~~<br>~~GG~~<br>~~(~~|VGS= 0V, ID= 250µA<br>~~GO~~<br>~~GG~~<br>~~(~~|
|∆ΒVDSS/∆TJ<br>~~a~~<br>~~RR~~<br>~~ee~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~GG~~<br><br>~~ee~~|–––<br>~~GO~~<br>~~GG~~<br><br>|0.097<br>~~GO~~<br>~~GG~~<br>~~G~~~~**G**~~<br><br>~~GO~~<br>|–––<br>~~GO~~<br>~~GG~~<br>~~**G**~~<br>~~GG~~<br>|V/°C<br>~~GO GO~~<br>~~GG~~<br>~~(~~<br>~~GG~~<br>|Reference to 25°C, ID= 1mA<br>~~GO~~<br>~~GG~~<br>~~(~~<br>~~GO~~|
|RDS(on)<br>~~RR ~~<br>~~ee~~<br>~~ee~~<br>~~ae~~|Static Drain-to-Source On-Resistance<br> ~~GG~~<br>~~e~~<br>~~ee~~<br>|–––<br>~~GG~~<br>~~e~~<br>~~ee~~<br>|12<br>~~GG~~<br>~~G~~~~**G**~~<br>~~e~~<br>~~GO~~<br>~~ee~~<br>|15<br>~~GG~~<br>~~**G**~~<br>~~GG~~<br>~~ee~~<br>|mΩ<br>~~GG~~<br>~~(~~<br>~~GG~~<br>~~ee~~<br>|VGS= 10V, ID= 12A<br>~~GG~~<br>~~(~~<br>~~GO~~|
|VGS(th)<br>~~ee~~<br>~~ee~~<br>~~ae~~|Gate Threshold Voltage<br>~~e~~<br>~~ee~~<br>|3.0<br>~~e~~<br>~~ee~~<br>|4.0<br>~~G~~~~**G**~~<br>~~e~~<br>~~GO~~<br>~~ee~~<br>|4.9<br>~~**G** ~~<br>~~GG~~<br>~~ee~~<br>|V<br> ~~( ~~<br>~~GG~~<br>~~ee~~<br>|VDS= VGS, ID= 100µA<br> ~~(~~<br>~~GO~~<br>~~SE~~|
|∆VGS(th)/∆TJ<br>~~ee~~<br>~~ae~~|Gate Threshold Voltage Coefficient<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|-11<br>~~GO~~<br>~~ee~~<br>~~ee~~|–––<br>~~GG~~<br>~~ee~~<br>~~ee~~<br>~~SE~~|mV/°C<br>~~GG~~<br>~~ee~~<br>~~ee~~<br>~~SE~~||
|IDSS<br>~~ee~~<br>~~ae~~<br>~~ee~~<br>~~——_——————————~~|Drain-to-Source Leakage Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~——_——————————~~|–––<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|–––<br>~~GO ~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~|20<br> ~~GG~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~SE~~|µA<br>~~GG ~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~SE~~<br><br>~~——_——————————~~|VDS= 80V, VGS= 0V<br> ~~GO~~<br>~~ee~~<br>~~SE~~|
|||–––<br>~~ee~~<br>~~PT~~<br>~~——_——————————~~|–––<br>~~ee~~<br>~~PT~~<br>~~——_——————————~~|250<br>~~ee~~<br>~~SE~~<br>~~PT~~<br>~~——_——————————~~||VDS= 64V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~SE~~<br>~~ee~~<br>~~——_——————————~~|
|IGSS<br>~~ee~~<br>~~——_——————————~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~——_——————————~~<br>~~es~~|–––<br>~~ee~~<br>~~PT~~<br>~~——_——————————~~<br>~~es~~|–––<br>~~ee~~<br>~~PT~~<br>~~——_——————————~~|100<br>~~ee~~<br>~~SE~~<br>~~PT ~~<br>~~——_——————————~~|nA<br>~~ee~~<br>~~SE~~<br> <br>~~——_——————————~~<br>~~GG~~|VGS= 20V<br>~~ee~~<br>~~SE~~<br> ~~ee~~<br>~~——_——————————~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~——_——————————~~<br>~~es~~<br>|–––<br>~~——_——————————~~<br>~~es~~<br>~~GG~~<br>|–––<br>~~——_——————————~~<br>~~GG~~<br>|-100<br>~~——_——————————~~<br>~~GG~~<br>||VGS= -20V<br>~~——_——————————~~<br>~~ee~~|
|gfs<br>~~——_——————————~~<br>~~Gn~~<br>~~ee~~|Forward Transconductance<br>~~——_——————————~~<br>~~es~~<br>~~Gn~~<br>|22<br>~~——_——————————~~<br>~~es~~<br>~~Gn~~<br>~~GG~~<br>|–––<br>~~——_——————————~~<br>~~Gn~~<br>~~GG~~<br>|–––<br>~~——_——————————~~<br>~~Gn~~<br>~~GG~~<br>|S<br>~~——_——————————~~<br>~~Gn~~<br>~~GG~~|VDS= 10V, ID= 12A<br>~~——_——————————~~<br>~~ee~~<br>~~Gn~~|
|Qg<br>~~ee~~<br>~~Re~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~GG~~<br>~~ee~~<br>|22<br>~~GG~~<br>~~ee~~<br>|31<br>~~GG~~<br>~~ee~~<br>|nC<br>~~GG~~<br>~~GO GO~~|See Fig. 15<br>VDS= 40V<br>ID= 12A<br>VGS= 10V<br>~~GO~~|
|Qgs1<br>~~ee~~<br>~~Re~~<br>~~ee~~|Pre-Vth Gate-to-Source Charge<br>~~ee~~<br>~~CG~~|–––<br>~~GG~~<br>~~ee~~<br>~~CG~~|4.8<br>~~GG ~~<br>~~ee~~<br>~~CG~~|–––<br> ~~GG~~<br>~~ee~~<br>~~CG~~|||
|Qgs2<br><br>~~Re~~<br>~~ee~~|Post-Vth Gate-to-Source Charge<br>~~ee~~<br>~~CG~~|–––<br>~~ee~~<br>~~CG~~|1.6<br>~~ee~~<br>~~CG~~|–––<br>~~ee~~<br>~~CG~~|||
|Qgd<br><br>~~ee~~<br>~~eC~~<br>~~ee~~|Gate-to-Drain Charge<br>~~CG~~<br>~~eC~~<br>~~ee~~|–––<br>~~CG~~<br>~~eC~~<br>~~ee~~|7.8<br>~~CG~~<br>~~eC~~<br>~~ee~~|12<br>~~CG~~<br>~~eC~~<br>~~ee~~|||
|Qgodr<br>~~ee~~|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~|7.8<br>~~ee~~|–––<br>~~ee~~|||
|Qsw<br>~~ee~~<br>~~eC~~<br>~~a~~|Switch Charge(Qgs2+ Qgd)<br>~~ee~~<br>~~eC~~<br>~~GO~~|–––<br>~~ee~~<br>~~eC~~<br>~~GO~~|9.4<br>~~ee~~<br>~~eC~~<br>~~GO~~|–––<br>~~ee~~<br>~~eC~~<br>~~GO~~|||
|Qoss<br>~~a~~<br>~~RR~~<br>~~ee~~|Output Charge<br>~~GO~~<br>~~GG~~<br>|–––<br>~~GO~~<br>~~GG~~|12<br>~~GO~~<br>~~GG~~<br>~~GG~~|–––<br>~~GO~~<br>~~GG~~<br>~~GG~~|nC<br>~~GO GO~~<br>~~GG~~<br>~~( (~~|VDS= 16V, VGS= 0V<br>~~GO~~<br>~~GG~~<br>~~(~~|
|RG(Internal)<br>~~a~~<br>~~RR~~<br>~~ee~~|Gate Resistance<br>~~GO~~<br>~~GG~~<br>~~ee~~|–––<br>~~GO~~<br>~~GG~~|1.0<br>~~GO~~<br>~~GG~~<br>~~GG~~|–––<br>~~GO~~<br>~~GG~~<br>~~GG~~|Ω<br>~~GO GO~~<br>~~GG~~<br>~~( (~~|~~GO~~<br>~~GG~~<br>~~(~~<br>®|
|td(on)<br>~~RR ~~<br>~~ee~~|Turn-On DelayTime<br> ~~GG~~<br>~~ee~~|–––<br>~~GG~~|19<br>~~GG~~<br>~~GG~~|–––<br>~~GG~~<br>~~GG~~|ns<br>~~GG~~<br> ~~( (~~|RG= 6.2Ω<br>See Fig. 16 & 17<br>VDD= 40V, VGS= 10V<br>ID= 12A<br>~~GG~~<br>~~(~~<br>®|
|tr<br>~~ee ~~<br>~~eC~~<br>~~ee~~|Rise Time<br> ~~ee~~<br>~~eC~~<br>~~ee~~|–––<br>~~eC~~<br>~~ee~~|13<br>~~GG~~<br>~~eC~~<br>~~ee~~|–––<br>~~GG ~~<br>~~eC~~<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|7.1<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~ee~~<br>~~eC~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~eC~~<br>~~ee~~|–––<br>~~ee~~<br>~~eC~~<br>~~ee~~|23<br>~~ee~~<br>~~eC~~<br>~~ee~~|–––<br>~~ee~~<br>~~eC~~<br>~~ee~~|||
|Ciss<br>~~ee~~|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|1320<br>~~ee~~|–––<br>~~ee~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 25V|
|Coss<br>~~ee~~<br>~~eC~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~eC~~|–––<br>~~ee~~<br>~~eC~~|310<br>~~ee~~<br>~~eC~~|–––<br>~~ee~~<br>~~eC~~|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance|–––|76|–––|||



> Repetitive rating;  pulse width limited by max. junction temperature. 

> Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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2 

## **Absolute Maximum Ratings** 

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sO Parameter Max. Units<br>a PD @TA = 25°C Power Dissipation  2.8 W<br>a PD @TA = 70°C Power Dissipation  1.8<br>ed PD @TC = 25°C Power Dissi © pation  89<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -40  to + 150<br>ee TSTG Storage Temperature Range<br>Thermal Resistance<br>RsQO Parameter Typ. Max. Units<br>RθJA  Junction-to-Ambient   ––– 45<br>es ©<br>RθJA  Junction-to-Ambient   12.5 –––<br>RsOQ<br>RθJA  Junction-to-Ambient   20 ––– °C/W<br>es © QO<br>RθJC  Junction-to-Case  ––– 1.4<br>RsSO<br>es RθJ-PCB  SQ Junction-to-PCB Mounted © © OO 1.0 –––<br>ef Linear Derating Factor  0.022 W/°C<br>10 S e ee ee ee ee SS SS ee ee ee ee ee ee eee<br>YAP PEI EAE EEA<br>1<br>D = 0.50<br>FF mmr TF<br>0.20<br>0.1 0.050.020.10 SSSe== e ---ee τ J τ Jτ 1 τ 1 R 1 R 1 τ2 τR22 R 2 Rτ 33Rτ 3 3 ti<Ci τ CτC Ri  UL 00..(35°C/17283W3 ) 00τ..0000000336i (sec4)8<br>— 0.01 RTSTHbri li; =| rE Ci= Ci=  sb| τi/τRii/Ri sb| Lb es 0.5536 0.0014 || 69 i l<br>eT} EAE 4 es ||<br>0.01 P oet i<br>SINGLE PULSE<br>S a er<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 enn | | een<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Used double sided cooling , mounting pad. (0) Rθ is measured at Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

6) Surface mounted on 1 in. square Cu (still air). 

@ Mounted to a PCB with small clip heatsink (still air) 

Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

www.irf.com 

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1000<br>VGS TS<br>TOP           15V10V HERR HH<br>8.0V<br>7.0V<br>BOTTOM 6.0V<br>100<br>arenas<br>10<br>p e Zerit iit<br>6.0V<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>1 adenSee aati<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>1000<br>———S—<br>VDS = 10V<br>≤60µs PULSE WIDTH ee ee<br>100 wee s<br>LM<br>TJ = 150°C<br>10<br>— ee—— TTJJ = 25°C = -40°C<br>1 e e a || ee<br>a ,<br>| |<br>0.1 | [Vi] a ee<br>2 4 6 8 10 12<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics<br>10000<br>F S VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs  + Cgd,  C ds SHORTED<br>=e Crss    = Cgd<br>a Coss   ee = Cds + Cgd<br>1000 — P | E Ciss rer<br>P P N Coss T<br>PFT ELT<br>100 P ee SH Crss eePS<br>a eee eel<br>e R<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS sy<br>TOP           15V10V HERR HH<br>8.0V<br>7.0V<br>BOTTOM 6.0V<br>100<br>ge 6.0V<br>10<br>e_ Au-e =e<br>≤60µs PULSE WIDTH<br>Tj = 150°C<br>1 Con pe<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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2.0<br>ID = 12A<br>VGS = 10V<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>60<br>TJ = 25°C<br>50 | Vgs = 7.0V  f o<br>Vgs = 8.0V<br>!<br>Vgs = 10V<br>40 |P|<br>Vgs = 15V  /<br>30 | AN fp<br>20 E AN<br>| oY |\K<br>10 S S en<br>0 E ffet<br>0 20 40 60 80 100<br>ID, Drain Current (A)<br>Typical RDS(on) (Normalized)<br>)Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current 

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1000 Py TJ = 150°C de yy<br>100 | | TJ = 25°C | dL Cee<br>TJ = -40°C<br>10<br>p o OYss<br>ee ae ss<br>1<br>E p<br>P | VGS = 0VGS = 0V= 0V<br>0 ee aefey Td<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>yy pe<br>dL Cee 100 adS T<br>10 0µsec<br>1 msec<br>10<br>OYss bSE ill mi ss 10msec HSON A<br>1<br>p tHe EERE<br>Tc = 25°C<br>VGS = 0VGS = 0V= 0V pep Tj = 150°CSingle Pulse SS R A Y<br>Td 0.1 a stiee er,ed kt |<br>0.8 1.0 1.2 0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig11.   Maximum Safe Operating  Area<br>6.0<br>5.0<br>« |<br>F agan ean<br>4.0<br>ID = 100µA SD SP <I<br>ID = 250µA<br>3.0<br>ID = 1.0mA<br>ATS<br>| tN ID = 1.0A PELELELES<br>2.0 TTT ISN<br>100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Fig 13.   Threshold Voltage vs. Temperature<br>100<br>ID TOP<br>4.3A<br>80 7.6A<br>BOTTOM 23A<br>60 A NGE<br>40<br>C NET<br>20<br>P SST<br>| RSS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>Typical VGS(th), Gate threshold Voltage (V)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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60<br>50<br>S oA<br>40<br>.<br>30<br>20<br>a aa<br>10<br>| | tN<br>0 ||<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br> Gate Charge Test Circuit<br>15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**Fig 16a.** Unclamped Inductive Test Circuit 

**==> picture [183 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>D<br>V<br>DS<br>+<br>V -<br>DD<br>D.U.T<br>V<br>GS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>a<br>**----- End of picture text -----**<br>


**==> picture [192 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 15b.** Gate Charge Waveform 

**==> picture [208 x 379] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>—_ oo<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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**==> picture [429 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + |-$—_______ P.W. Period S e D = ———. Period<br>) @    •  Circuit Layout Considerations |t V i GS=10V<br> •<br>| =] - LowGroundStray  PlaneInduct: ance<br> •   CurrentLow LeakageTransformerInductance Oo) D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | S - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ —_—_<br>® D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>00 \ i VDD<br>Re •  •   di/dtDrivercontrolledsame typebyasRgD.U.T. Vv,DD + Re-AppliedVoltage Body Diode  Forward Drop +<br>•   -<br>•   D.U.T. - Device Under Test SOO<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor"D" ® t<br>**----- End of picture text -----**<br>


## **Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

## DirectFET ™ Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

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## DirectFET ™ Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [410 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX  MAX  MAX<br> A 6.25 6.35 0.246 0.250<br> B 4.80 5.05 0.189 0.201<br> C 3.85 3.95 0.152 0.156<br> D 0.35 0.45 0.014 0.018<br> E 0.68 0.72 0.027 0.028<br> F 0.68 0.72 0.027 0.028<br> G 0.93 0.97 0.037 0.038<br> H 0.63 0.67 0.025 0.026<br> J 0.28 0.32 0.011 0.013<br> K 1.13 1.26 0.044 0.050<br> L 2.53 2.66 0.100 0.105<br> M 0.616 0.676 0.0235 0.0274<br> R 0.020 0.080 0.0008 0.0031<br>. 1 -  P 0.08 0.17 0.003 0.007<br>DirectFET ™  Part Marking<br>**----- End of picture text -----**<br>


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## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7" reel, order   IRF6668TR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7"<br>reel, order   IRF6668TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7"<br>reel, order   IRF6668TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7"<br>reel, order   IRF6668TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7"<br>reel, order   IRF6668TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7"<br>reel, order   IRF6668TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7"<br>reel, order   IRF6668TR1PBF|
|---|---|---|---|---|---|
|**REEL DIMENSIONS**||||||
|STANDARD OPTION**(QTY 4800)**<br>a<br>SSSSesoo=||**(QTY 4800)**<br>TR1 OPTION**(QTY 1000)**<br>a<br>SSSSesoo=||||
|SSSSesoo=<br>S5SSSe==—|METRIC<br>IMPERIAL<br>SSSSesoo=<br>S5SSSe==—|IMPERIAL<br>METRIC<br>SSSSesoo=<br>S5SSSe==—||IMPERIAL<br>SSSSesoo=<br>S5SSSe==—||
|MIN<br>CODE<br>SSSSesoo=<br>S5SSSe==—|MIN<br>MAX<br>MIN<br>SSSSesoo=<br>S5SSSe==—|MIN<br>MAX<br>MIN<br>SSSSesoo=<br>S5SSSe==—|MAX<br>SSSSesoo=<br>S5SSSe==—|MIN<br>SSSSesoo=<br>S5SSSe==—|MAX<br>SSSSesoo=<br>S5SSSe==—|
|330.0<br>A<br>SSSSesoo=<br>S5SSSe==—|330.0<br>N.C<br>12.992<br>SSSSesoo=<br>S5SSSe==—|12.992<br>N.C<br>177.77<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|6.9<br>N.C<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|
|20.2<br>B<br>SSSSesoo=<br>S5SSSe==—|20.2<br>N.C<br>0.795<br>SSSSesoo=<br>S5SSSe==—|0.795<br>N.C<br>19.06<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|0.75<br>N.C<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|
|12.8<br>C<br>SSSSesoo=<br>S5SSSe==—|12.8<br>13.2<br>0.504<br>SSSSesoo=<br>S5SSSe==—|0.504<br>0.520<br>13.5<br>SSSSesoo=<br>S5SSSe==—|12.8<br>SSSSesoo=<br>S5SSSe==—|0.53<br>0.50<br>SSSSesoo=<br>S5SSSe==—|0.50<br>SSSSesoo=<br>S5SSSe==—|
|1.5<br>D<br>SSSSesoo=<br>S5SSSe==—|1.5<br>N.C<br>0.059<br>SSSSesoo=<br>S5SSSe==—|0.059<br>N.C<br>1.5<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|0.059<br>N.C<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|
|100.0<br>E<br>SSSSesoo=<br>S5SSSe==—|100.0<br>N.C<br>3.937<br>SSSSesoo=<br>S5SSSe==—|3.937<br>N.C<br>58.72<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|2.31<br>N.C<br>SSSSesoo=<br>S5SSSe==—|N.C<br>SSSSesoo=<br>S5SSSe==—|
|N.C<br>F<br>SSSSesoo=<br>S5SSSe==—<br>aeee|N.C<br>18.4<br>N.C<br>SSSSesoo=<br>S5SSSe==—<br>ee|N.C<br>0.724<br>N.C<br>SSSSesoo=<br>S5SSSe==—<br>ee<br>ee|13.50<br>SSSSesoo=<br>S5SSSe==—<br>ee<br>ee|N.C<br>0.53<br>SSSSesoo=<br>S5SSSe==—<br>ee|0.53<br>SSSSesoo=<br>S5SSSe==—<br>ee|
|12.4<br>G<br>S5SSSe==—<br>aeee|12.4<br>14.4<br>0.488<br>S5SSSe==—<br>ee|0.488<br>0.567<br>11.9<br>S5SSSe==—<br>ee<br>ee|12.01<br>S5SSSe==—<br>ee<br>ee|0.47<br>N.C<br>S5SSSe==—<br>ee|N.C<br>S5SSSe==—<br>ee|
|11.9<br>H<br>aeee<br>ee|11.9<br>15.4<br>0.469<br>ee<br>ee|0.469<br>0.606<br>11.9<br>ee<br>ee<br>ee|12.01<br>ee<br>ee<br>ee|0.47<br>N.C<br>ee<br>ee|N.C<br>ee<br>ee|



LOADED TAPE FEED DIRECTION 

**==> picture [115 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE  MIN re  MAX a  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br> B  3.90  4.10 0.154 0.161<br> C D | 11.90 5.45 12.30 5.55 0.4690.215 0.4840.219<br> E  5.10 rs  5.30 0.201 a 0.209<br> F  6.50 rs  6.70 0.256 a 0.264<br> G  1.50  N.C 0.059  N.C<br>=e  H  1.50  1.60 0.059 0.063<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/06 

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9 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6668TRPBF/power-mosfet-n-channel-80-v-55-a-0015-ohm)
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- [Supplier page](https://es.farnell.com/infineon/irf6668trpbf/mosfet-n-ch-80v-55a-directfet/dp/2579988)
---

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