# Power MOSFET, N Channel, 100 V, 19 A, 0.062 ohm, DirectFET SH, Surface Mount

![Product image](https://novapart.co/image/farnell:2579987/)

**URL**: https://novapart.co/products/IRF6665TRPBF/power-mosfet-n-channel-100-v-19-a-0062-ohm
**SKU**: IRF6665TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4560
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET SH |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 19A |
| Drain Source On State Resistance | 0.062ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579987/)

## IRF6665PbF IRF6665TRPbF 

~~Pe~~ **Key Parameters Features** • Latest MOSFET Silicon technology ~~ee~~ VDS ~~ee~~ 100 ~~ee~~ V • Key parameters optimized for Class-D audio amplifier ~~ee~~ RDS(on) typ. @ VGS = 10V 53 m applications ~~ee~~ • Low RDS(on) for improved efficiency ~~ee~~ Qg typ. ~~ee~~ 8.7 nC ~~ee~~ • Low Qg for better THD and improved efficiency RG(int) typ. 1.9 • Low Qrr for better THD and lower EMI ~~he~~ • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 100W per channel into 8Ω with no heatsink © • Dual sided cooling compatible Compatible with existing surface mount technologies . e || | 2 RoHS compliant containing no lead or bromide ° Lead-Free (Qualified up to 260°C Reflow) SH DirectFET ™ ISOMETRIC Applicable DirectFET Outline and  Substrate Outline (see p. 6, 7 for details) SQ SX ST **SH** MQ MX MT MN ~~[| | QR T fc. dT fg <T [J dj~~ 

## **Description** 

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest  processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. 

The IRF6665PbF device utilizes DirectFET[TM] packaging technology.  DirectFET[TM] packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging.  Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.  The DirectFET[TM] package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.  The DirectFET[TM] package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. 

## **Absolute Maximum Ratings** 

|~~————————————~~|**Parameter**<br>~~————————————~~|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~————————————~~<br>~~OO~~|Drain-to-Source Voltage<br>~~————————————~~<br>~~OO~~|100<br>~~OO~~|V|
|VGS<br>~~————————————~~<br>~~OO~~<br>~~GO~~|Gate-to-Source Voltage<br>~~————————————~~<br>~~OO~~<br>~~GO~~|± 20<br>~~OO~~<br>~~GO~~||
|ID@ TC= 25°C<br>~~————————————~~|Continuous Drain Current, VGS@ 10V<br>~~————————————~~|19|A<br>~~i~~|
|ID@ TA= 25°C<br>~~LG~~|Continuous Drain Current, VGS@ 10V<br>~~LG~~|4.2<br>~~LG~~||
|ID@ TA= 70°C<br>~~OO~~<br>~~Le~~|Continuous Drain Current, VGS@ 10V<br>~~OO~~|3.4<br>~~OO~~<br>~~G~~||
|IDM<br>~~OO~~<br>~~Le~~<br>~~—~~|Pulsed Drain Current<br>~~OO~~<br>~~ee~~|34<br>~~OO~~<br>~~G~~<br>~~i~~||
|PD@TC= 25°C<br>~~Le~~<br>~~Oo~~<br>~~—~~|Maximum Power Dissipation<br>~~Oo~~<br>~~ee~~|42<br>~~G~~<br>~~Oo~~<br>~~i~~|W<br>~~i~~|
|PD@TA= 25°C<br>~~Oo~~<br>~~—~~<br>~~Se~~|Power Dissipation<br>~~Oo~~<br>~~ee~~|2.2<br>~~Oo~~<br>~~i~~<br>~~O~~||
|PD@TA= 70°C<br>~~—~~<br>~~Se~~|Power Dissipation<br>~~ee~~|1.4<br>~~i~~<br>~~O~~||
|~~—~~<br>~~Se~~|Linear Derating Factor<br>~~ee~~|0.017<br>~~i~~<br>~~O~~|W/°C<br>~~i~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-40  to + 150|°C|



|~~OT~~<br>~~OC~~|**Parameter**<br>~~OT~~<br>~~OC~~|**Typ.**<br>~~OT~~<br>~~OC~~|**Max.**<br>~~OT~~<br>~~OC~~|**Units**<br>~~OT~~<br>~~o—*=Xkw—]~~|
|---|---|---|---|---|
|RθJA<br>~~OC~~|Junction-to-Ambient<br>~~OC~~|–––<br>~~OC~~|58<br>~~OC~~|°C/W<br>~~o—*=Xkw—]~~<br>~~LT~~|
|RθJA<br>~~OC~~<br>~~LG~~<br>~~ert~~|Junction-to-Ambient<br>~~OC~~<br>~~LG~~<br>~~ert~~<br>~~LT~~|12.5<br>~~OC~~<br>~~LG~~<br>~~LT~~|–––<br>~~OC~~<br>~~LG~~<br>~~LT~~||
|RθJA<br>~~ert~~|Junction-to-Ambient<br>~~ert~~<br>~~LT~~|20<br>~~LT~~|–––<br>~~LT~~||
|RθJC<br>~~ert~~<br>~~I~~<br>~~TI~~|Junction-to-Case<br>~~ert~~<br>~~LT~~<br>~~Oooo~~|–––<br>~~LT~~<br>~~Oooo~~|3.0<br>~~LT~~<br>~~Oooo~~<br>~~LT~~||
|RθJ-PCB<br>~~TI~~|Junction-to-PCB Mounted<br>~~Oooo~~|1.4<br>~~Oooo~~|–––<br>~~Oooo~~<br>~~LT~~||



1 08/25/06 

## IRF6665PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>∆V(BR)DSS/∆TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.12<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>53<br>62<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>RG(int)<br>Internal Gate Resistance<br>–––<br>1.9<br>2.9<br>Ω<br>**Conditions**<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 5.0A<br>VDS= VGS, ID= 250µA<br>VDS= 100V, VGS= 0V<br>VDS= 80V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~Re~~<br>~~QO~~<br>~~GO~~<br>~~GO~~<br>~~ReRD~~<br>~~GO GO~~<br>~~Rs~~<br>~~QO GO~~<br>~~QO~~<br>~~es~~<br>~~DD~~<br>~~GO GO~~<br>~~Rs~~<br>~~QO~~<br>~~GO~~<br>~~QO~~<br>~~EE~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~eeCD~~<br>~~GO~~<br>~~GO GO~~|
|---|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**|
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>gfs<br>Forward Transconductance<br>6.6<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>8.4<br>13<br>VDS= 50V<br>Qgs1<br>Pre-Vth Gate-to-Source Charge<br>–––<br>2.2<br>–––<br>VGS= 10V<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>0.64<br>–––<br>ID= 5.0A<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>2.8<br>–––<br>nC<br>See Fig. 6 and 17<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>2.8<br>–––<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>3.4<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>7.4<br>–––<br>tr<br>Rise Time<br>–––<br>2.8<br>–––<br>td(off)<br>Turn-Off DelayTime<br>–––<br>14<br>–––<br>ns<br>tf<br>Fall Time<br>–––<br>4.3<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>530<br>–––<br>Coss<br>Output Capacitance<br>–––<br>110<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>29<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>510<br>–––<br>Coss<br>Output Capacitance<br>–––<br>67<br>–––<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>130<br>–––<br>**Conditions**<br>VDS= 10V, ID= 5.0A<br>VGS= 10V<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz<br>VGS= 0V,  VDS= 80V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 80V<br>VDD= 50V<br>ID= 5.0A<br>RG= 6.0Ω<br>~~esRD~~<br>~~I GO~~<br>~~CO GO~~<br>~~es~~<br>~~GO GO~~<br>~~GO~~<br>~~eses~~<br>~~Rs~~<br>~~eses~~<br>~~Re~~<br>~~eees~~<br>~~RsGe~~<br>~~eees~~<br>~~Re~~<br>~~Rs~~<br>~~esCD~~<br>~~@~~<br>~~Re~~<br>~~eees~~<br>~~Rs~~<br>~~es~~<br>~~Po~~<br>~~RsGe~~<br>~~es~~|
|**Avalanche Characteristics**|
|**Parameter**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>**Typ.**<br>–––<br>–––<br>11<br>5.0<br>**Max.**<br>~~eeQO~~<br>~~GO~~<br>~~RsQO~~<br>~~es~~<br>~~©~~<br>~~QO~~<br>~~QO~~|
|**Diode Characteristics**|
|D<br>**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>38<br>**Conditions**<br>MOSFET symbol<br>~~esRD~~<br>~~ED OR~~<br>~~NGO GO~~|
|(BodyDiode)<br>A<br>showing  the|
|G<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>34<br>integral reverse|
|S<br>(BodyDiode)<br>p-njunction diode.|
|VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse RecoveryTime<br>–––<br>31<br>–––<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>37<br>–––<br>nC<br>TJ= 25°C,IS= 5.0A,VGS= 0V<br>TJ= 25°C, IF= 5.0A, VDD= 25V<br>di/dt = 100A/µs<br>~~ee~~<br>~~GO~~<br>~~GO GO~~<br>~~Bh~~<br>~~Rs~~<br>~~®~~|



Used double sided cooling , mounting pad. 

o Repetitive rating;  pulse width limited by @ Mounted on minimum footprint full size board with max. junction temperature. metalized back and with small clip heatsink. @ Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A. TC measured with thermal couple mounted to top ® Surface mounted on 1 in. square Cu board. (Drain) of part. ® Pulse width ≤ 400µs; duty cycle ≤ 2%. © Rθ is measured at TJ of approximately 90°C. © Coss eff. is a fixed capacitance that gives the same ® Based on testing done using a typical device & evaluation board charging time as Coss while VDS is rising from 0 to 80% VDSS. at Vbus=±45V, fSW=400KHz, and TA=25°C.  The delta case =400KHz, and TA=25°C.  The delta case =25°C.  The delta case 

Based on testing done using a typical device & evaluation board at Vbus=±45V, fSW=400KHz, and TA=25°C.  The delta case temperature ∆TC is 55°C. 

www.irf.com 

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## IRF6665PbF 

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100<br>VGS<br>S S TOP           15V<br>10V<br>9.0V<br>8.0V<br>7.0V<br>BOTTOM 6.0V<br>10<br>fo<br>6.0V<br>1 a e aman at<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>CIC |<br>0.1<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100<br>e e a ee ee<br>re ee ee ee en<br>ee ee a <n ee<br>10 | | FI | |<br>e e<br>TJ = -40°C<br>- | | -——<br>TJ = 25°C<br>1 TJ = 150°C<br>ee ee a<br>VDS = 25V<br>≤60µs PULSE WIDTH<br>it<br>0.1<br>2 4 6 8 10 12<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>Crss    = Cgd<br>L Coss   = Cds + Cgd<br>1000<br>ee<br>Ciss<br>z L | Coss<br>100<br>e e ee ee ee<br>Crss<br>a impel<br>10 Selillaamaii<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>SSS Sere TOP           15V<br>10V<br>9.0V<br>8.0V<br>7.0V<br>BOTTOM 6.0V<br>10<br>6.0V<br>Se ee<br>1 Z A<br>≤60µs PULSE WIDTH<br>Tj = 150°C<br>iC<br>0.1<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 5.0A<br>VGS = 10V<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>12.0<br>ID= 5.0A<br>10.0 VDS= 80V<br>VDS= 50V _<br>8.0 VDS= 20V<br>Gf<br>6.0 | 7 /iy<br>4.0<br>2.0<br>0.0 POC<br>0 2 4 6 8 10<br> QG  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

www.irf.com 

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## IRF6665PbF 

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100 e e<br>Pf |b<br>| | OG<br>Y<br>10 |4 _| ff/ fj}4<br>o e TJ = -40°C<br>TJ = 25°C<br>| ee oe TJ = 150°C |<br>If TE a<br>/ |<br>VGS = 0V<br>ale| |<br>1<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
1000<br>Tc = 25°C<br>Se Sette eet<br>Tj = 150°C<br>Single Pulse OPERATION IN THIS AREA<br>100 j LIMITED BY R amal DS(on)<br>10 B apea 10 0µ sec l<br>pai<br>aay<br>PRA S|<br>1 1msec |<br>DC<br>10ms e c<br>MS<br>0.1 eP SSPCEtt SaCuesPe TI a g (CTTec a CattCTT<br>0.01<br>0 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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5<br>4<br>_|<br>a<br>S EE<br>3<br>~<br>C OPE<br>2<br>P N\<br>1<br>0 ef] tt LN<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Ambient Temperature 

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5.5<br>T IT?<br>5.0<br>e tt tt<br>4.5<br>B GEEESA<br>S ET<br>SE<br>4.0<br>F PSB yeBEEP<br>SN<br>3.5 DRA<br>ID = 250µA WanSS<br>ID = 1.0mA |<br>3.0 ID = 1.0A<br>2.5<br>P tEELSINAN<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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100 a a a a eee ee ie ea ee 0 ee | |<br>D = 0.50<br>SS st eee Ee ee email<br>10 A 0.20 eS en<br>0.10<br>1 S TTTee 0.020.05 eeeA eeseneestleTeee R1 TTI R 1 R —— 2 R 2 ctlTTI R rll 3 R3 R 4 SETHI R 4 | R5R5 Ri (°C/W)   1.6195       0.000126 |ep  τi (sec) ||<br>P= = 0.01 eeTee τJ τ e Jτ1 τ1 e τ2 τ2 aa τ3 τ3 aa τ4 τ4 aa τ5 τ5 | τAτA rid 2.1406       0.00135422.2887     0.375850 i|<br>PAT EH | | OY 20.0457     7.410000<br>Ci= τi/Ri<br>0.1 SINGLE PULSE Ci= τi/Ri 11.9144      99<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>YE EEE LEU CEEE EEE 2. Peak Tj = P dm x Zthja + Tc |<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

www.irf.com 

4 

IRF6665PbF 

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TOR Rectitier<br>200<br>180 t t ID = 5.0A<br>160 P ot<br>140 P y |<br>120 P N tT| fTTttT ht<br>TJ = 125°C<br>100<br>Nee<br>80 a<br>60<br>40 TJ = 25°C<br>20 =P T |<br>0 | | | | | ft||<br>4 6 8 10 12 14 16 18<br>VGS, Gate -to -Source Voltage  (V)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

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15V<br>VDS L DRIVER<br>RG -_ D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω<br>a Hy | |<br>Fig 15a.   Unclamped Inductive Test Circuit<br>_<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp<br>IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
120<br>100 TJ = 125°C<br>80<br>TJ = 25°C<br>60<br>Vgs = 10V<br>40<br>0 2 4 6 8 10<br>ID, Drain Current (A)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance ( m<br>**----- End of picture text -----**<br>


**Fig 13.** On-Resistance vs. Drain Current 

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50<br>ID<br>TOP         0.86A<br>T a<br>40 1.3A<br>BOTTOM 5.0A<br>KUREE<br>30<br>20 N \ E EEE<br>P SST<br>10<br>S t<br>SNe |<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

**Fig 15b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 16a.** Switching Time Test Circuit www.irf.com 

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V<br>DS<br>90%<br>van<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Switching Time Waveforms 

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## IRF6665PbF 

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ne SameCurrentTypeRegulatoras D.U.T.<br>|<br>|<br>50KΩ !<br>12V .2µF<br>.3µF<br> Et—t—_1____ | +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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Id<br>Vds<br>Vgs<br>!<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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**----- Start of picture text -----**<br>
+<br>® Circuit Layout Considerations<br>   •  Low Stray Inductance<br> •<br> •<br>| | - CurrentLowGround Leakage PlaneTransformer Inductance<br>+<br>° © ®<br>- - +<br>00<br>®O<br>•<br>Re ) •  •   Driverdi/dt controlledsame type by Reas D.U.T. Vop +<br>•   D.U.T. - Device Under Test -<br>, Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. —| Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current ~~ di/dt /<br>@ D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ +<br>VDD<br>av<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Indu nt<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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IRF6665PbF 

## DirectFET **™** Substrate and PCB Layout, SH Outline (Small Size Can, H-Designation). 

Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. 

**==> picture [306 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>G S<br>1 - ‘~ y<br>D D<br>**----- End of picture text -----**<br>


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## IRF6665PbF 

Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs. 

DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN MAX ee A 4.75 4.85 0.187 0.191 B 3.70 3.95 0.146 0.156 C 2.75 2.85 0.108 0.112 D 0.35 0.45 0.014 0.018 E 0.58 0.62 0.023 0.024 F 0.58 0.62 0.023 0.024 G 0.63 0.67 0.025 0.026 H 0.83 0.87 0.033 0.034 K 0.99 1.03 0.039 0.041 L 2.29 2.33 0.090 0.092 M 0.616 0.676 0.0235 0.0274 R 0.020 0.080 0.0008 0.0031 a P 0.08 0.17 0.003 0.007 

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## IRF6665PbF 

DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6665TRPBF). For 1000 parts on 7" reel, order   IRF6665TR1PBF 

Cd **REEL DIMENSIONS** STANDARD OPTION **(QTY 4800)** TR1 OPTION **(QTY 1000)** es METRIC IMPERIAL METRIC IMPERIAL CODE MIN MAX MIN MAX MIN MAX MIN MAX ee A 330.0 N.C 12.992 N.C 177.77 N.C 6.9 N.C ee B 20.2 ee N.C ee 0.795 N.C 19.06 N.C 0.75 N.C C 12.8 13.2 0.504 0.520 13.5 12.8 0.53 0.50 D 1.5 N.C 0.059 N.C 1.5 N.C 0.059 N.C ee E 100.0 ee N.C 3.937 ee N.C 58.72 N.C 2.31 N.C F N.C 18.4 N.C 0.724 N.C 13.50 N.C 0.53 G 12.4 14.4 0.488 0.567 11.9 12.01 0.47 N.C pf H 11.9 15.4 0.469 0.606 11.9 12.01 0.47 N.C 

## Loaded Tape Feed Direction 

**==> picture [130 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE  MIN  MAX  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br> B  3.90  4.10 0.154 0.161<br> C 11.90 12.30 0.469 0.484<br>-—|-—|—}  D  5.45  5.55 0.215 + 0.219<br> E  4.00  4.20 0.158 0.165<br>-—|-—|—}  F  5.00  5.20 0.197 + 0.205<br> G  1.50  N.C 0.059  N.C<br>-—--—~}—}  H  1.50  1.60 0.059 + 0.063<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/06 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6665TRPBF/power-mosfet-n-channel-100-v-19-a-0062-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6665trpbf/mosfet-n-ch-100v-19a-directfet/dp/2579987)
---

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