# Power MOSFET, N Channel, 100 V, 47 A, 0.022 ohm, DirectFET MZ, Surface Mount

![Product image](https://novapart.co/image/farnell:2781112RL/)

**URL**: https://novapart.co/products/IRF6662TRPBF/power-mosfet-n-channel-100-v-47-a-0022-ohm
**SKU**: IRF6662TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0200
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MZ |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 47A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 3.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781112RL/)

PD - 97243A 

## IRF6662PbF 

RoHs Compliant 

Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs 

Ideal for High Performance Isolated Converter Primary Switch Socket 

|||IRF6662TRPbF<br>DirectFET**™**Power MOSFET<br>,|
|---|---|---|
|**VDSS**<br>100V max||**Typical values(unless otherwise specified)**<br>**VGS**<br> ±20V max<br>**RDS(on)**<br>17.5mΩ@ 10V|
|**Qg  tot**||**Qgd**<br>**Qgs2**<br>**Qrr**<br>**QossVgs(th)**|
|22nC||6.8nC<br>1.2nC<br>50nC<br>11nC<br>3.9V|



Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) **S D G D** Dual Sided Cooling Compatible **S** Compatible with existing Surface Mount Techniques DirectFET **™** ISOMETRIC **MZ** Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT **MZ** ~~|| a~~ 

## **Description** 

The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**|
|---|---|
|**Parameter**<br>**Units**<br>**Max.**<br>~~ff~~||
|VDS<br>Drain-to-Source Voltage<br>V<br>100||
|VGS<br>Gate-to-Source Voltage<br>±20||
|ID@ TA= 25°C<br>Continuous Drain Current,VGS@ 10V<br>ID@ TA= 70°C<br>Continuous Drain Current,VGS@ 10V<br>A<br>ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V<br>IDM<br>Pulsed Drain Current<br>EAS<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>39<br>6.6<br>47<br>66<br>8.3<br>4.9<br>~~ee ee~~<br>~~ee~~<br>~~Oe~~<br>~~esQO~~<br>~~Pf~~<br>~~Oe~~<br>~~es~~<br>~~©~~<br>~~QO~~<br>~~PC~~<br>~~Oe~~||
|0<br>20<br>40<br>60<br>80<br>100<br>Typical RDS(on) (mΩ)<br>I<br>D<br>= 4.9A<br>T<br>J<br>= 25°C<br>T<br>J<br>= 125°C<br>0.0<br>2.0<br>4.0<br>6.0<br>8.0<br>10.0<br>12.0<br>VGS, Gate-to-Source Voltage (V)<br>V<br>DS<br>= 80V<br>V<br>DS<br>= 50V<br>V<br>DS<br>= 20V<br>I<br>D<br>= 4.9A<br>~~it~~<br>|<br>~~ft ft~~<br>| J<br>~~CIP Pr)~~<br>~~O~~E<br>Se<br>~~(_[_~~<br>~~|~~<br>ZZ<br>~~pM~~<br>~~ft fT~~<br>~~=~~<br>ae<br>~~eee +~~<br>~~T~~Y<br>|||<br>~~Ft tL.~~<br>~~Y to~~||
|4<br>6<br>8<br>10<br>12<br>14<br>16<br>0<br>5<br>10<br>15<br>20<br>25||
|VGS, Gate -to -Source Voltage  (V)<br>QG  Total Gate Charge (nC)||



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100<br>ID = 4.9A<br>80 it | ft ft<br>60<br>CIP Pr)<br>40 (_[_ TJ = 125°C |<br>pM ft fT<br>20<br>eee +<br>TJ = 25°C<br>0 Ft tL.<br>4 6 8 10 12 14 16<br>VGS, Gate -to -Source Voltage  (V)<br>)Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


## **Fig 2.** Typical  Total Gate Charge vs. Gate-to-Source Voltage 

## **Fig 1.** Typical On-Resistance vs. Gate Voltage 

Notes: 

TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 3.2mH, RG = 25Ω, IAS = 4.9A. 

Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 

www.irf.com 

1 

08/25/06 

## IRF6662PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~<br>~~es~~|**Parameter**<br>~~Qs~~<br>~~QO~~|**Min.**<br>~~Qs~~<br>~~QO~~|**Typ.**<br>~~GOD~~<br>~~QO~~|**Max.**<br>~~CO~~<br>~~QO~~|**Units**<br>~~CO~~<br>~~GO~~|**Conditions**<br>~~CO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~ee~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~Qs~~<br>~~QO~~|100<br>~~Qs~~<br>~~QO~~|–––<br>~~GOD~~<br>~~QO~~|–––<br>~~CO~~<br>~~QO~~|V<br>~~CO ~~<br>~~GO~~|VGS= 0V, ID= 250µA<br> ~~CO~~|
|∆ΒVDSS/∆TJ<br>~~es~~<br>~~ee~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~QO~~<br>~~Gs~~<br>~~QO~~|–––<br>~~QO~~<br>~~Gs~~<br>~~QO~~|0.10<br>~~QO~~<br>~~GD~~<br>~~QO~~|–––<br>~~QO~~<br>~~QO~~<br>~~OD~~|V/°C<br>~~GO~~<br>~~QO~~<br>~~OO~~|Reference to 25°C, ID= 1mA<br>~~CO~~|
|RDS(on)<br>~~ee~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~Gs~~<br>~~QO~~|–––<br>~~Gs~~<br>~~QO~~|17.5<br>~~GD~~<br>~~QO~~|22<br>~~QO~~<br>~~OD~~|mΩ<br>~~QO ~~<br>~~OO~~|VGS= 10V, ID= 8.2A<br> ~~CO~~|
|VGS(th)<br>~~es~~<br>~~cl~~<br>~~es~~|Gate Threshold Voltage<br>~~QO~~<br>~~cl~~<br>~~es~~|3.0<br>~~QO~~<br>~~cl~~|3.9<br>~~QO ~~<br>~~cl~~|4.9<br> ~~OD ~~<br>~~cl~~|V<br> ~~OO~~<br>~~cl~~|VDS= VGS, ID= 100µA<br>~~cl~~<br>~~ee~~|
|∆VGS(th)/∆TJ<br>~~cl~~<br>~~es~~|Gate Threshold Voltage Coefficient<br>~~cl~~<br>~~es~~|–––<br>~~cl~~<br>~~ce~~|-9.7<br>~~cl~~<br>~~ee~~|–––<br>~~cl~~<br>~~ee~~|mV/°C<br>~~cl~~<br>~~ee~~||
|IDSS<br>~~es~~<br>~~ee~~<br>~~_————————_—EE~~|Drain-to-Source Leakage Current<br>~~es~~<br>~~ee~~<br>~~_————————_—EE~~|–––<br>~~ee~~<br>~~ce~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>~~_————————_—EE~~|VDS= 100V, VGS= 0V<br>~~ee~~<br>~~ee~~<br>~~Po~~|
|||–––<br>~~ee~~<br>~~ce~~<br>~~a~~<br>~~_————————_—EE~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~_————————_—EE~~|250<br>~~ee~~<br>~~ee~~<br>~~_————————_—EE~~||VDS= 80V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~<br>~~Po~~<br>~~_————————_—EE~~|
|IGSS<br>~~_————————_—EE~~<br>~~ee~~<br>~~I~~|Gate-to-Source Forward Leakage<br>~~_————————_—EE~~<br>~~ee~~<br>|–––<br>~~ce ~~<br>~~a~~<br>~~_————————_—EE~~<br>~~ee~~<br>|–––<br> ~~ee ~~<br>~~ee~~<br>~~_————————_—EE~~<br>|100<br> ~~ee~~<br>~~_————————_—EE~~<br>|nA<br>~~ee ~~<br>~~_————————_—EE~~<br><br>~~GO~~|VGS= 20V<br> ~~ee~~<br>~~Po~~<br>~~_————————_—EE~~<br>~~PO~~<br>|
||Gate-to-Source Reverse Leakage<br>~~_————————_—EE~~<br>~~ee~~<br>|–––<br>~~_————————_—EE~~<br>~~ee~~<br>|–––<br>~~_————————_—EE~~<br><br>~~GOD~~|-100<br>~~_————————_—EE~~<br><br>~~GO~~||VGS= -20V<br>~~_————————_—EE~~<br>~~PO~~<br><br>~~(OO~~|
|gfs<br>~~_————————_—EE~~<br>~~ee~~<br>~~I~~|Forward Transconductance<br>~~_————————_—EE~~<br>~~ee~~<br>~~CG~~|11<br>~~_————————_—EE~~<br>~~ee~~<br>~~CG~~|–––<br>~~_————————_—EE~~<br>~~CG~~<br>~~GOD~~|–––<br>~~_————————_—EE~~<br>~~CG~~<br>~~GO~~|S<br>~~_————————_—EE~~<br>~~CG~~<br>~~GO~~|VDS= 10V, ID= 4.9A<br>~~_————————_—EE~~<br>~~PO~~<br>~~CG~~<br>~~(OO~~|
|Qg<br>~~ee~~<br>~~I~~<br>~~ee~~|Total Gate Charge<br>~~ee ~~<br><br>~~ee~~|–––<br> ~~ee~~<br><br>~~ee~~|22<br><br>~~GOD ~~<br>~~ee~~|31<br><br> ~~GO~~<br>~~ee~~|nC<br><br>~~GO ~~<br>~~OO~~|See Fig. 15<br>ID= 4.9A<br>VGS= 10V<br>VDS= 50V<br>~~PO~~<br><br> ~~(OO~~|
|Qgs1<br>~~ee~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|4.9<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2<br>~~ee~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|1.2<br>~~ee~~|–––<br>~~ee~~|||
|Qgd<br>~~es~~<br>~~ee~~<br>~~es~~|Gate-to-Drain Charge|–––|6.8|10|||
|Qgodr<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate Charge Overdrive|–––|9.1|–––|||
|Qsw<br>~~es~~<br>~~ee~~<br>~~Rs~~|Switch Charge(Qgs2+ Qgd)<br>~~QO~~|–––<br>~~QO~~|8.0<br>~~QO~~|–––<br>~~GO~~|||
|Qoss<br>~~ee~~<br>~~Rs~~|Output Charge<br>~~QO~~|–––<br>~~QO~~|11<br>~~QO~~|–––<br>~~GO~~|nC<br>~~OO~~|VDS= 16V, VGS= 0V|
|RG<br>~~Rs~~<br>~~ee~~<br>~~es~~|Gate Resistance<br>~~QO~~<br>~~GO~~|–––<br>~~QO~~<br>~~GO~~|1.2<br>~~QO~~<br>~~Gs~~|–––<br>~~GO~~<br>~~QO~~|Ω<br>~~OO~~<br>~~QO~~|~~(OO~~<br>®|
|td(on)<br>~~ee~~<br>~~es~~|Turn-On DelayTime<br>~~GO~~|–––<br>~~GO ~~|11<br> ~~Gs~~|–––<br>~~QO~~|ns<br>~~QO ~~|RG=6.2Ω<br>See Fig. 17<br>VDD= 50V, VGS= 10V<br>ID= 4.9A<br> ~~(OO~~<br>®|
|tr<br>~~es~~<br>~~ee~~<br>~~es~~|Rise Time|–––|7.5|–––|||
|td(off)<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-Off DelayTime|–––|24|–––|||
|tf<br>~~es~~<br>~~ee~~<br>~~es~~|Fall Time|–––|5.9|–––|||
|Ciss<br>~~ee~~<br>~~es~~|Input Capacitance|–––|1360|–––|pF<br>~~Po~~|VDS= 25V<br>VGS= 0V<br>ƒ= 1.0MHz|
|Coss<br>~~es~~<br>~~ee~~<br>~~es~~|Output Capacitance|–––|270|–––|||
|Crss<br>~~ee~~<br>~~es~~|Reverse Transfer Capacitance|–––|61|–––|||
|Coss<br>~~es~~<br>~~ee~~<br>~~es~~|Output Capacitance|–––|1340|–––||VGS= 0V, VDS= 1.0V, f=1.0MHz<br>~~Po—i—i‘sSCsiszr~~|
|Coss<br>~~ee~~<br>~~es~~|Output Capacitance|–––|160|–––||VGS= 0V, VDS= 80V, f=1.0MHz<br>~~Po—i—i‘sSCsiszr~~<br>~~Ps~~|



## **Notes:** 

> Repetitive rating;  pulse width limited by max. junction temperature. 

> Pulse width ≤ 400µs; duty cycle ≤ 2%. 

www.irf.com 

2 

IRF6662PbF 

## **Absolute Maximum Ratings** 

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a a Parameter Max. Units<br>Sees PD @TA = 25°C Power Dissipation  2.8 W<br>PD @TA = 70°C Power Dissipation  1.8<br>esses—— PD @TC = 25°C Power Dissipation  ee 89 il<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -40  to + 150<br>Se TSTG Storage Temperature Range<br>Thermal Resistance<br>eC Parameter Typ. Max. Units<br>ST RθJA  Junction-to-Ambient   ––– 45<br>SOs RθJA  Junction-to-Ambient   12.5 –––<br>RθJA  Junction-to-Ambient   20 ––– °C/W<br>Sess RθJC  Junction-to-Case  ––– 1.4<br>a—————— RθJ-PCB  Junction-to-PCB Mounted  a 1.0 ee –––<br>100<br>D = 0.50 1ee ee eel ee Ee Pitt<br>10 QS 0.200.10 mc<br>Saget i tt TTA<br>0.05<br>1 0.02<br>— 1emeenl eermsimeesee aN= AL aal<br>0.1 Fe 0.01 aeHI τJ τJτ1 τ1 R1 R1 τ2 τR22 R2 Rτ33 R τ3 3 τR4 τ4R4 4 τAτA Ri (°C/W)    rr 1.2801       0.0003228.7256       0.16479821.7500     2.2576 τi (sec) ne |<br>P e A<br>SINGLE PULSE Ci= τi/Ri 13.2511     69<br>0.01 Ee alll ( THERMAL RESPONSE ) eal Ci τi/Ri ee ||<br>i ey Notes: HITT eens seems<br>I EEE TEE FEE 1. Duty Factor D = t1/t2 HI<br>PEE EEE TT EET 2. Peak Tj = P dm x Zthja + Tc il<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

## **Notes:** 

Used double sided cooling , mounting pad. (0) Rθ is measured at TJ of approximately 90°C. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

® Surface mounted on 1 in. square Cu (still air). 

(©) Mounted to a PCB with small clip heatsink (still air) 

(0) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

www.irf.com 

3 

## IRF6662PbF 

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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>= a 10V Soe 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>BOTTOM 6.0V BOTTOM 6.0V<br>fF / U4, 6.0V TTT<br>10 10<br>D ANENE Pau NN<br>6.0V<br>Seisieeeisieeeieee ett rY aataati Saati<br>≤60µs PULSE WIDTH60µs PULSE WIDTH ≤60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>1 clischisch 1 f ei<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics Fig 5.   Typical Output Characteristics<br>100 2.0<br>VDS = 10V VGS = 10V<br>≤60µs PULSE WIDTH Vaz I D  = 8.2A<br>10 ae a 1.5 stele<br>TJ = 150°C<br>TJ = 25°C<br>TJ = -40°C Y/f | BZ<br>1 1.0<br>rasan cL<br>0.1 ere 0.5 TELE<br>3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics Fig 7.   Normalized On-Resistance vs. Temperature<br>100000 45<br>VCGS  iss    = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED TJ = 25°C<br>Crss    = Cgd  40 Vgs = 7.0V<br>10000 es ee C ee oss   ee = Cds  eee + Cgd eee ee eee 35 / Vgs = 8.0V Vgs = 10V<br>ee ee Vgs = 15V<br>1000 fo Ciss 30 v i e<br>Coss 25<br>SLT) HUI D4<br>100<br>P| Crss Pra 20 a = oF<br>E T ea SS<br>10 PEI TL 15 = ==<br>1 10 100 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>)Ω<br>Typical RDS(on) (m<br>ID, Drain-to-Source Current (A)<br>Typical RDS(on) (Normalized)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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100<br>VGS<br>TOP           15V<br>= a 10V<br>8.0V<br>7.0V<br>BOTTOM 6.0V<br>fF /<br>10<br>D ANENE<br>6.0V<br>Seisieeeisieeeieee ett<br>≤60µs PULSE WIDTH60µs PULSE WIDTH<br>Tj = 25°C<br>1 clischisch<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current 

**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

www.irf.com 

4 

IRF6662PbF 

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TOR Rectifier<br>1000 1000<br>VGS = 0V TTT S OPERATION IN THIS AREA  SS<br>LIMITED BY RDS(on)<br>100 cpe pe EEE 100 CS PAe u yl cue Tie<br>TJ = 150°C 100µsec<br>TJ = 25°C<br>10 TJ = -40°C 10<br>ee ( a N) 1msec<br>PEL PAR BR<br>10msec<br>1 |  | | | f | f | ft | 1 C it iill|<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0 PLA 0.1 ne<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Typical Source-Drain Diode Forward Voltage Fig11.   Maximum Safe Operating Area<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

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10 |<br>8<br>6 N N<br>4 C ON]\<br>O N\<br>2<br>0 et tT tA<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Ambient Temperature 

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**----- Start of picture text -----**<br>
7.0<br>ID = 100µA<br>6.0 P | | fff ID = 250µA<br>ID = 1.0mA<br>ID = 1.0A<br>5.0 E EEEZZ<br>4.03.0 RTE EESEPPSSS| eS<br>2.0<br>f -LLEELELESit ISS<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Fig 13.   Typical Threshold Voltage vs.<br>Junction Temperature<br>Typical VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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160<br>ID<br>a aa<br>140<br>TOP         1.6A<br>1.9A<br>N ae<br>120<br>100 V E BOTTOM 4.9A<br>80 P ALE EELEEL<br>60 N i<br>40<br>E SNEEE EEE<br>20<br>B a>~SE Re<br>0 Pt | |ESL<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

www.irf.com 

5 

## IRF6662PbF 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**Fig 15b.** Gate Charge Waveform 

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V(BR)DSS(BR)DSS<br>15V tp<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω IASAS<br>A OL<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS(BR)DSS<br>tp<br>IASAS<br>OL<br>Fig 16b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

RD 

**==> picture [215 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>VGS<br>D.U.T.<br>RG<br>+<br>- [V][DD]<br>10V<br>Pulse Width ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>a<br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

www.irf.com 

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## IRF6662PbF 

**==> picture [477 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
® Driver Gate Drive<br>D.U.T Period D = P.W.<br>+ re P.W. Period<br>*<br>2 Circuit Layout Considerations   •  Low Stray Inductance V | GS=10V<br>(faa)| —] -       Current Transformer •   •  Ground PlaneLow Leakage Inductance > D.U.T. ISD Waveform |<br>+<br>Reverse<br>- e - ® + RecoveryCurrent Body Diode ForwardCurrent di/dt<br>D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>RG •  •  Driver same type as D.U.T.di/dt controlled by RG VDD + Re-AppliedVoltage Body Diode  Forward Drop<br>•  ISD controlled by Duty Factor "D" - Inductor CurrentInductor Curent<br>•  D.U.T. - Device Under Test<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET[®] Power MOSFETs 

## DirectFET **™** Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

www.irf.com 

7 

## IRF6662PbF 

## DirectFET **™** Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

|MAX<br>0.250<br>0.201<br>0.156<br>0.018<br>0.028<br>0.028<br>0.038<br>0.026<br>0.013<br>0.050<br>0.105<br>0.0274<br>0.0031<br>0.007<br>MAX<br>0.246<br>0.189<br>0.152<br>0.014<br>0.027<br>0.027<br>0.037<br>0.025<br>0.011<br>0.044<br>0.100<br>0.0235<br>0.0008<br>0.003<br>IMPERIAL<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>J<br>K<br>L<br>M<br>R<br>P<br>MAX<br>6.35<br>5.05<br>3.95<br>0.45<br>0.72<br>0.72<br>0.97<br>0.67<br>0.32<br>1.26<br>2.66<br>0.676<br>0.080<br>0.17<br>MIN<br>6.25<br>4.80<br>3.85<br>0.35<br>0.68<br>0.68<br>0.93<br>0.63<br>0.28<br>1.13<br>2.53<br>0.616<br>0.020<br>0.08<br>METRIC<br>DIMENSIONS<br>Po<br>ee<br>ee<br>| {|<br>fff<br>ee ee<br>ee<br>ee ee<br>ee<br>ee ee<br>ee<br>ee<br>ee ee<br>ee<br>|<br>|<br>|<br>|<br>fF |<br>ee ee<br>ee<br>ee ee<br>ee<br>ee ee<br>ee<br>ee<br>ee ee<br>ee<br>|<br>|<br>|<br>|<br>fF |<br>ee ee<br>ee ee<br>ee<br>ee ee<br>ee<br>eeee|
|---|



## DirectFET **™** Part Marking 

www.irf.com 

8 

IRF6662PbF 

DirectFET **™** Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7" reel, order   IRF6662TR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7"<br>reel, order   IRF6662TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7"<br>reel, order   IRF6662TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7"<br>reel, order   IRF6662TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7"<br>reel, order   IRF6662TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7"<br>reel, order   IRF6662TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7"<br>reel, order   IRF6662TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7"<br>reel, order   IRF6662TR1PBF|
|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>eee".<br>_|||||||
|STANDARD OPTION**(QTY 4800)**<br>or|||**(QTY 4800)**<br>TR1 OPTION**(QTY 1000)**<br>or<br>_||||
|=|METRIC<br>=|IMPERIAL<br>=|IMPERIAL<br>METRIC<br>=||IMPERIAL<br>_<br>=||
|MIN<br>CODE<br>=|MIN<br>MAX<br>=|MIN<br>MAX<br>=|MAX<br>MAX<br>MIN<br>=|MAX<br>=|MIN<br>=|MAX<br>=|
|330.0<br>A<br>=|330.0<br>N.C<br>=|12.992<br>N.C<br>=|N.C<br>N.C<br>177.77<br>=|N.C<br>=|6.9<br>=|N.C<br>=|
|20.2<br>B<br>=<br>===|20.2<br>N.C<br>=<br>===|0.795<br>N.C<br>=<br>===|N.C<br>N.C<br>19.06<br>=<br>===|N.C<br>=<br>===|0.75<br>=<br>===|N.C<br>=<br>===|
|12.8<br>C<br>===|12.8<br>13.2<br>===|0.504<br>0.520<br>===|0.520<br>12.8<br>13.5<br>===|12.8<br>===|0.53<br>===|0.50<br>===|
|1.5<br>D<br>===|1.5<br>N.C<br>===|0.059<br>N.C<br>===|N.C<br>N.C<br>1.5<br>===|N.C<br>===|0.059<br>===|0.059<br>N.C<br>===|
|100.0<br>E<br>===<br>ae<br>ee|100.0<br>N.C<br>===<br>ee<br>ee|3.937<br>N.C<br>===<br>ee|N.C<br>N.C<br>58.72<br>===<br>ee|N.C<br>===<br>ee|2.31<br>===<br>ee|N.C<br>===<br>ee|
|N.C<br>F<br>===<br>ae<br>ee|N.C<br>18.4<br>===<br>ee<br>ee|N.C<br>0.724<br>===<br>ee|0.724<br>13.50<br>N.C<br>===<br>ee|13.50<br>===<br>ee|N.C<br>===<br>ee|0.53<br>===<br>ee|
|12.4<br>G<br>ae<br>ee<br>ee|12.4<br>14.4<br>ee<br>ee<br>ee|0.488<br>0.567<br>ee<br>ee|0.567<br>12.01<br>11.9<br>ee<br>ee|12.01<br>ee<br>ee|0.47<br>ee<br>ee|N.C<br>ee<br>ee|
|11.9<br>H<br>ee|11.9<br>15.4<br>ee|0.469<br>0.606<br>ee|0.606<br>12.01<br>11.9<br>ee|12.01<br>ee|0.47<br>ee|N.C<br>ee|



## LOADED TAPE FEED DIRECTION 

**==> picture [116 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE  MIN  MAX  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br> B  3.90  4.10 0.154 0.161<br> C 11.90 12.30 0.469 0.484<br> D  5.45  5.55 0.215 0.219<br> E  5.10  5.30 0.201 0.209<br> F  6.50  6.70 0.256 0.264<br> G  1.50  N.C 0.059  N.C<br> H  1.50  1.60 0.059 0.063<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/06 

www.irf.com 

9 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6662TRPBF/power-mosfet-n-channel-100-v-47-a-0022-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6662trpbf/mosfet-n-ch-100v-47a-directfet/dp/2781112RL)
---

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