# Power MOSFET, N Channel, 60 V, 86 A, 7000 µohm, DirectFET MN, Surface Mount

![Product image](https://novapart.co/image/farnell:2579986/)

**URL**: https://novapart.co/products/IRF6648TRPBF/power-mosfet-n-channel-60-v-86-a-7000-ohm
**SKU**: IRF6648TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8290
**Stock**: 500+
**Lead Time**: 141 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MN |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 86A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579986/)

IRF6648PbF IRF6648TRPbF 

## DirectFET™ Power MOSFET  

**Typical values (unless otherwise specified)** 

- RoHs Compliant   

- Lead-Free (Qualified up to 260°C Reflow) 

|RoHs Compliant  RoHs Compliant  <br>Lead-Free (Qualified up to 260°C Reflow)Lead-Free (Qualified up to 260°C Reflow)||||||**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|**Typical values (unless otherwise specified)**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Lead-Free (Qualified up to 260°C Reflow)Lead-Free (Qualified up to 260°C Reflow)<br>Application Specific MOSFETs||**VDSS**|||||**VGS**|||||**RDS(on)**|||
|Optimized for Synchronous Rectification for||60V min||||±20V max||±20V max||5.5m@ 10V|||||
|5V to 12V outputs<br>Low Conduction Losses||**Qg  tot**||**Qgd**||**d**|**Qgs2**|||**Qrr**||**Qoss**||**Vgs(th)**|
|Ideal for 24V input Primary Side Forward Converters||36nC||14nC|||2.7nC|2.7nC||37nC||11nC||4.0V|
|Low Profile (<0.7mm)|||||||||||||||
|Dual Sided Cooling Compatible|||||||||||||||
|Compatible with existing Surface Mount Techniques|||||||a||||||||
|Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details)|||||||MN|||||DirectFET**™**ISOMETRIC|||
|**SH**<br>**SJ**<br>**SP**<br>**MZ**<br>**MN**<br>~~[Ta~~|||||||||||||||
|**Description**|||||||||||||||



The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.  The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance. 

|**Base part number**<br>**Package Type**|**Base part number**<br>**Package Type**|**Standard Pack**<br>**Form**<br>**Quantity**|**Standard Pack**<br>**Form**<br>**Quantity**|**Orderable Part Number**|**Orderable Part Number**|
|---|---|---|---|---|---|
|IRF6648TRPbF<br>DirectFET™Medium Can||Tape and Reel|4800|IRF6648TRPbF||
|**Absolute Maximum Ratings **||||||
||**Parameter**|||**Max.**|**Units**|
|VDS<br>VGS|Drain-to-SourceVoltage<br>Gate-to-Source Voltage|||60<br>±20|V|
|ID @TC= 25°C|ContinuousDrainCurrent,VGS @10V(Silicon Limited)|||86||
|ID@ TC =70°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|||69|A|
|IDM|PulsedDrainCurrent|||260||
|EAS|Single Pulse Avalanche Energy|||47|mJ|
|IAR|Avalanche Current|||34|A|



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60<br>ID = 17A<br>50<br>40 ISTE<br>30 | eit | fl hE 1<br>20<br>TJ = 125°C<br>10<br>ee ee<br>TJ = 25°C<br>0 as ee ee ee el<br>4 6 8 10 12 14 16<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


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12.0<br>10.0 F ID= 17A T<br>VDS= 48V<br>8.0 tT V DS = 30V<br>6.0 |Poe| ft SaizA<br>4.0<br>2.0<br>| rrr<br>0.0 Zane| yt<br>0 5 10 15 20 25 30 35 40<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

>  Click on this section to link to the appropriate technical paper. 

>  Click on this section to link to the DirectFET Website. 

-  Surface mounted on 1 in. square Cu board, steady state. 

**Fig 2.** Typical Total Gate Charge vs. Gate-to-Source Voltage 

-  TC measured with thermocouple mounted to top (Drain) of part. 

 Repetitive rating;  pulse width limited by max. junction temperature. 

 Starting TJ = 25°C, L = 0.082mH, RG = 25, IAS = 34A. 

Notes 

1 

2017-04-06 

~~Cinfineon~~ 

IRF6648TRPbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~es~~|**Parameter**<br>~~eG~~<br>~~ee~~|**Min.**<br>~~eG~~<br>~~rs~~|**Typ. Max.**<br>~~eG~~<br>~~rs~~|**. Max.**<br>~~eG~~<br>~~ee~~|**Units**<br>~~eG~~|**Conditions**<br>~~eG~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~eG~~<br>~~ee~~|60<br>~~eG~~<br>~~rs~~|–––<br>~~eG~~<br>~~rs~~|–––<br>~~eG~~<br>~~ee~~|V<br>~~eG~~|VGS= 0V, ID= 250µA<br>~~eG~~|
|VDSS/TJ<br>~~es ~~<br>~~ee~~<br>~~f+~~|Breakdown Voltage Temp. Coefficient<br> ~~ee~~<br>~~ee~~<br>~~f+~~|––– 0.076 –––<br>~~rs~~<br>~~ee~~<br>|––– 0.076 –––<br>~~rs ~~<br>~~ee~~<br>~~ts~~<br>|––– 0.076 –––<br> ~~ee~~<br>~~ee~~<br>|V/°C Reference to 25°c<br>~~ee~~<br>|V/°C Reference to 25°c,ID= 1mA<br>~~ee~~<br>|
|RDS(on)<br>~~ee~~<br>~~a ~~<br>~~f+~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br> ~~es~~<br>~~f+~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~++4+4~~~<br>|5.5<br>~~ee~~<br>~~es~~<br>~~ts~~<br>~~++4+4~~~<br>|7.0<br>~~ee~~<br>~~es~~<br>~~++4+4~~~<br>|m<br>~~ee~~<br>~~es~~<br>~~++4+4~~~<br>|VGS= 10V, ID= 17A<br>~~ee~~<br>~~es~~<br>~~++4+4~~~<br>~~|~~<br>|
|VGS(th)<br>~~f+~~<br>~~a~~|Gate Threshold Voltage<br>~~f+ ~~<br>|3.0<br> ~~++4+4~~~<br>|4.0<br>~~ts~~<br>~~++4+4~~~<br>|4.9<br>~~++4+4~~~<br>|V<br>~~++4+4~~~<br>|VDS= VGS, ID= 150µA<br>~~++4+4~~~<br>~~|~~<br><br>~~SE~~|
|VGS(th)/TJ<br><br>~~a~~|Gate Threshold Voltage Temp. Coefficient<br> <br>|–––<br> ~~++4+4~~~<br>|-11<br>~~++4+4~~~<br><br>~~SE~~|–––<br>~~++4+4~~~<br><br>~~SE~~|mV/°C<br>~~++4+4~~~<br><br>~~SE~~||
|IDSS<br><br>~~aPe~~<br>~~Be~~|Drain-to-Source Leakage Current<br> <br>~~Pe~~<br>|–––<br> ~~++4+4~~~<br>~~Pe~~|–––<br>~~++4+4~~~<br>~~Pe~~<br>~~SE~~|20<br>~~++4+4~~~<br>~~Pe~~<br>~~SE~~|µA<br>~~++4+4~~~<br>~~Pe~~<br>~~SE~~<br><br>|VDS= 60 V,VGS= 0V<br>~~++4+4~~~<br>~~|~~<br>~~Pe~~<br>~~SE~~|
|||–––<br>~~Pe~~<br>~~P|~~<br>|–––<br>~~Pe~~<br>~~SE~~<br>~~P|~~<br>|250<br>~~Pe~~<br>~~SE~~<br>~~P|~~<br>||VDS= 48 V,VGS= 0V,TJ= 125°C<br>~~Pe~~<br>~~SE~~<br>~~Po~~<br>|
|IGSS<br>~~Be —~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~—~~<br>~~ee~~|–––<br>~~P|~~<br>~~—~~|–––<br>~~SE~~<br>~~P|~~<br>~~—~~|100<br>~~SE~~<br>~~P|~~<br>~~—~~|nA<br>~~SE~~<br><br>~~—~~|VGS= 20V<br>~~SE~~<br>~~Po~~<br>~~—~~|
||Gate-to-SourceReverseLeakage<br>~~—~~<br>~~ee~~|–––<br>~~P|~~<br>~~—~~|–––<br>~~P|~~<br>~~—~~|-100<br>~~P|~~<br>~~—~~||VGS= -20V<br>~~Po~~<br>~~—~~|
|gfs<br>~~Be~~<br>~~ee~~<br>~~Ce~~<br>~~ee~~<br>~~es~~|Forward Transconductance<br><br>~~ee~~<br>~~Ce~~<br>~~es~~|31<br>~~P|~~<br><br>~~Ce~~<br>~~es~~<br>~~ee~~|–––<br>~~P|~~<br><br>~~Ce~~<br>~~es~~|–––<br>~~P| ~~<br><br>~~Ce~~<br>~~es~~|S<br> <br><br>~~Ce~~|VDS= 10V,ID= 17A<br> ~~Po~~<br><br>~~Ce~~|
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|36<br>~~es~~|50<br>~~es~~|nC|VDS= 30V<br>VGS= 10V<br>ID= 17A<br>See Fig 15|
|Qgs1<br>~~ee~~<br>~~es~~|Pre– VthGate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|7.5<br>~~es~~|–––<br>~~es~~|||
|gs1<br>Qgs2<br>~~es~~<br>~~a~~|Post– Vth Gate-to-Source Charge|–––<br>~~ee~~|2.7|–––|||
|Qgd<br>~~a~~<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|14|21|||
|Qgodr<br>~~a~~<br>~~es~~<br>~~I~~|Gate Charge Overdrive<br>|–––|12|–––|||
|Qsw<br>~~es~~<br>~~ICE~~|Switch Charge(Qgs2+ Qgd)<br>~~CE~~|–––|17|–––|||
|Qoss<br>~~ICE~~|Output Charge<br>~~CE~~|–––|21|–––|nC|VDS= 16V,VGS= 0V|
|RG(Internal)<br>~~CE~~<br>~~a~~<br>~~es~~|Gate Resistance<br>~~CE~~|–––|1.0|–––|||
|td(on)<br>~~a~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|16<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 30V, VGS= 10V<br>ID= 17A<br>RG= 6.2<br>See Fig16 & 17|
|tr<br>~~es~~<br>~~ee~~<br>~~ee~~|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|29<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|td(off)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|28<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|tf<br>~~ee~~<br>~~es~~<br>~~es~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|13<br>~~ee~~|–––<br>~~ee~~|||
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|2120<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~Po~~|
|Coss<br>~~es~~<br>~~es~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|600<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Crss<br>~~es~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ee~~|170<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Coss<br>~~ee~~<br>~~ee~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~es~~|~~ee~~|2450<br>~~ee~~|~~ee~~||VGS= 0V,VDS= 1.0V,f =1.0MHz<br>~~Po~~<br>~~ee~~|
|Coss<br>~~ee ~~<br>~~es~~|Output Capacitance<br> ~~es~~||440|||VGS= 0V,VDS= 48V,f =1.0MHz<br>~~Po~~<br>~~ee~~|
|**Diode Characteristics**<br>~~es~~<br>~~ee~~<br>~~GsGDQsQQ~~|||||||
|~~Ds~~|**Parameter **<br>~~Ds~~|**Min.**<br>~~Ds~~<br>~~Gs~~|**Typ. M**<br>~~Ds~~<br>~~GD~~|**. Max.**<br>~~Ds~~<br>~~Qs~~|**Units**<br>~~Ds~~<br>~~Q~~|**Conditions**<br>~~Ds~~<br>~~QQ~~|
|IS|Continuous Source Current<br>(BodyDiode)|–––<br>~~Gs~~|–––<br>~~GD~~|81<br>~~Qs~~|A<br>~~Q~~<br>~~es~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~QQ~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~ers~~|–––<br>~~re~~|–––<br>~~es~~|260<br>~~es~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~ers~~|–––<br>~~re~~|–––<br>~~es~~|1.3<br>~~es~~|V<br>~~es~~|TJ= 25°C, IS= 17A, VGS= 0V|
|trr<br>~~a~~<br>~~Sn~~<br>~~es~~|Reverse RecoveryTime<br>~~ers ~~<br>~~Sn~~<br>~~ee~~|–––<br> ~~re ~~<br>~~Sn~~<br>~~ee~~|31<br> ~~es ~~<br>~~Sn~~<br>~~ee~~|47<br> ~~es ~~<br>~~ee~~|ns<br> ~~es~~<br>~~ee~~|TJ= 25°C, IF= 17A,VDD= 30V<br>di/dt = 100A/µsSee Fig. 18|
|Qrr<br>~~es~~|Reverse RecoveryCharge<br>~~ee~~|–––<br>~~ee~~|37<br>~~ee~~|56<br>~~ee~~|nC<br>~~ee~~||



>  Repetitive rating;  pulse width limited by max. junction temperature. 

>  Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Notes: 

2 

2017-04-06 

IRF6648TRPbF 

## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|PD @TA= 25°C|Power Dissipation|2.8|W|
|PD@TA =70°C|Power Dissipation|1.8||
|PD@TC =25°C|Power Dissipation|89||
|TP|Peak SolderingTemperature|270|°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-40  to + 150||



## **Thermal Resistance** 

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Symbol  Parameter  Typ.  Max.  Units<br>RJA Junction-to-Ambient  –––  45<br>RJA Junction-to-Ambient  12.5  –––  °C/W<br>RJC Junction-to-Can  ––– 1.4<br>RJA-PCB Junction-to-PCB Mounted  1.0  –––<br>Linear Derating Factor  0.022  W/°C<br>10<br>1<br>D = 0.50<br>SE re | rr<br>0.20<br>0.1 Pa 0.050.020.01 0.10  J  J 1  1 R 1R1  2 R2 2R2 R  3 3R 3 3 CC Ri  0.17199  0.67673  LI (°C/W) 0.000044  0.001660 i (sec)<br>0.01 HT Ci=  Ci 1  = i  Ri iRi Jl od Pf 0.54961  0.007649<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


## **Fig 3** .  Maximum Effective Transient Thermal Impedance, Junction-to-Case 

## **Notes:** 

   -  Used double sided cooling, mounting pad with large heatsink. 

-  Surface mounted on 1 in. square Cu board, steady state. 

-  TC measured with thermocouple incontact with top (Drain) of part. 

   -  Mounted on minimum footprint full size board with metalized back and with small clip heatsink.  R is measured at TJ of approximately 90°C. 

-  Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip  Mounted on minimum footprint full size board with metalized heatsink (still air) back and with small clip heatsink (still air) 

3 

2017-04-06 

IRF6648TRPbF 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>BOTTOM 6.0V<br>100<br>Te<br>10<br>6.0V<br>60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>BOTTOM 6.0V<br>100<br>Le<br>6.0V<br>10<br>60µs PULSE WIDTH<br>Tj = 150°C<br>1 Saliba<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

**Fig 4.** Typical Output Characteristics 

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1000<br>VDS = 10VDS = 10V= 10V<br>60µs PULSE WIDTH60µs PULSE WIDTHµs PULSE WIDTHs PULSE WIDTH<br>100 f=<br>TJ = 150°CJ = 150°C = 150°C<br>T J  = 25°C<br>1011 TJJ = -40°C40°C°CC i |<br>0.1 ize<br>2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 2.0<br>VDS = 10VDS = 10V= 10V ID = 86A<br>60µs PULSE WIDTH60µs PULSE WIDTHµs PULSE WIDTHs PULSE WIDTH V GS  = 10V<br>100 f=<br>1.5<br>TJ = 150°CJ = 150°C = 150°C<br>T J  = 25°C<br>TJJ = -40°C40°C°CC<br>1.0<br>1011 i |<br>0.1 ize<br>0.5<br>2 4 6 8 10<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 6.   Typical Transfer Characteristics  Fig 7.   Normalized On-Resistance vs. Temperature<br>10000 30<br>VCC C GS  iss  rss  oss     = C = 0V,       f = 1 MHZ = C = C gs  ds gd  + C + C gd gd ,  C ds SHORTED 25 Vgs Vgs = 8.0V Vgs = 10V = 7.0V  TJ = 25°C<br>C iss 20 Vgs = 15V<br>1000 Coss 15<br>10<br>Crss 5<br>0<br>100<br>0 20 40 60 80 100<br>1 10 100<br>PhO) |  BEE<br>VDS, Drain-to-Source Voltage (V) ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br>)<br>Typical RDS(on) (m<br>Typical RDS(on) (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Normalized Typical On-Resistance vs. Drain Current and Gate Voltage 

**Fig 8.** Typical Capacitance vs. Drain-to-Source Voltage 

4 2017-04-06 ~~~————————~~ 

2017-04-06 

IRF6648TRPbF ~~[LLL~~ 

## ~~Cofineon~~ 

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1000<br>TJ = 150°C<br>TJ = 25°C<br>100 TJ = -40°C<br>10<br>//<br>1<br>VGS = 0V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100µsec<br>1msec<br>10<br>10msec<br>, Te] Xe “el<br>1<br>Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

**Fig 11.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
90<br>80<br>A<br>70 PS<br>60<br>es<br>50<br>ee<br>40<br>a<br>30<br>a a<br>20 Se<br>10<br>0 TINee<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**==> picture [204 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.0<br>C<br>5.0 aa<br>SPREE<br>RLU<br>4.0<br>I D  = 150µA Sete<br>ID = 250µA EPS<br>3.0<br>ID = 1.0mA eaaNNG<br>2.0 I D  = 1.0A TTT SS iN<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>Typical VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

**==> picture [204 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>180 Wt ELL ID<br>TOP         12A<br>NER<br>160 18A<br>140 PYET | ft BOTTOM 34A<br>120 CONE<br>100 P| RE TE EL LL<br>KLINE<br>80<br>60 BN [ENE] EE Et Et<br>40 MINE<br>20 PP AE TT<br>0 | [|] E | | | ES | |<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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IRF6648TRPbF 

**Fig 15a.** Gate Charge Test Circuit 

**Fig 16a.** Unclamped Inductive Test Circuit 

**Fig 17a.** Switching Time Test Circuit 

**Fig 15b.** Gate Charge Waveform 

**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

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IRF6648TRPbF ~~|~~ 

## ~~———————$—~~ 

**Fig 18.** Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs 

## **DirectFET™  Substrate and PCB Layout, MN Outline**  **(Medium Size Can, N-Designation).** 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [262 x 145] intentionally omitted <==**

**----- Start of picture text -----**<br>
G=GATE<br>— = D=DRAIN<br>S=SOURCE<br>= a l _<br>D A D<br>S<br>A !<br>G<br>i]<br>S<br>D D<br>**----- End of picture text -----**<br>


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## IRF6648TRPbF ~~..........~~ 

## **DirectFET™  Outline Dimension, MN Outline (Medium Size Can, N-Designation).** 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [118 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX  MIN  MAX<br> A 6.25 6.35 0.246 0.250<br> B 4.80 5.05 0.189 0.201<br> C 3.85 3.95 0.152 0.156<br> D 0.35 0.45 0.014 0.018<br> E 0.88 0.92 0.034 0.036<br> F 0.78 0.82 0.031 0.032<br> G 1.38 1.42 0.054 0.056<br> H 0.88 0.92 0.034 0.036<br> J 0.48 0.52 0.019 0.020<br> K 1.16 1.29 0.046 0.051<br> L 2.74 2.91 0.109 0.115<br> M 0.616 0.676 0.0235 0.0274<br> R 0.020 0.080 0.0008 0.0031<br> P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


## **DirectFET[™ ] Part Marking** 

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## **DirectFET[™ ] Tape & Reel Dimension (Showing component orientation).** 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7" reel, order   IRF6648TR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"<br>reel, order   IRF6648TR1PBF|
|---|---|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**|||||||||
|STANDARD OPTION**(QTY 4800)**|||||TR1 OPTION**(QTY 1000)**||||
||METRIC||IMPERIAL||METRIC||IMPERIAL||
|CODE|MIN<br>MAX|MAX|MIN|MAX|MAX<br>MIN|MIN<br>MAX|MIN<br>MAX|MAX|
|A|330.0<br>N.C|N.C|12.992|12.992<br>N.C|N.C<br>177.77|6.9<br>N.C|6.9<br>N.C|N.C|
|B|20.2<br>N.C|N.C|0.795|0.795<br>N.C|N.C<br>19.06|0.75<br>N.C|0.75<br>N.C|N.C|
|C|12.8<br>13.2|13.2|0.504|0.504<br>0.520|12.8<br>13.5|0.53<br>12.8|0.53<br>0.50|0.50|
|D|1.5<br>N.C|N.C|0.059|0.059<br>N.C|N.C<br>1.5|0.059<br>N.C|0.059<br>N.C|N.C|
|E|100.0<br>N.C|N.C|3.937|3.937<br>N.C|N.C<br>58.72|2.31<br>N.C|2.31<br>N.C|N.C|
|F|N.C<br>18|8.4|N.C|0.724|1<br>N.C|N.C<br>13.50|N.C<br>0.53|0.53|
|G|12.4<br>14.4|14.4|0.488|0.488<br>0.567|12.<br>11.9|0.47<br>12.01|0.47<br>N.C|N.C|
|H|11.9<br>15.4|15.4|0.469|0.469<br>0.606|12.01<br>11.9|0.47<br>12.01|0.47<br>N.C|N.C|



## LOADED TAPE FEED DIRECTION 

|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|
||METRIC|IMPERIAL||
|MIN<br>CODE|MIN<br>MAX|MIN|MAX|
|7.90<br>A|7.90<br>8.10|0.311|0.319|
|3.90<br>B|3.90<br>4.10|0.154|0.161|
|11.90<br>C|11.90<br>12.30|0.469|0.484|
|5.45<br>D|5.45<br>5.55|0.215|0.219|
|5.10<br>E|5.10<br>5.30|0.201|0.209|
|6.50<br>F|6.50<br>6.70|0.256|0.264|
|1.50<br>G|1.50<br>N.C|0.059|N.C|
|1.50<br>H|1.50<br>1.60|0.059|0.063|



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## IRF6648TRPbF ~~. . . . » »#3x aaa~~ 

## **Qualification Information** 

|**Qualification Information**|||
|---|---|---|
|**Qualification Level**|Consumer†||
|**Moisture Sensitivity Level**|DirectFET**®**Medium Can|MSL1<br>(per JEDEC J-STD-020D†)|
|**RoHS Compliant**|Yes||



- Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**||**Comment**|
|---|---|---|
||Changed datasheet with Infineon logo - all pages.||
||Added Orderable  table on page 1.||
|04/06/2017|Corrected PCB layout on page 7||
||Added Qualification table on page 10.||
||Added disclaimer on last page.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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2017-04-06 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6648TRPBF/power-mosfet-n-channel-60-v-86-a-7000-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6648trpbf/mosfet-n-ch-60v-86a-directfet/dp/2579986)
---

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