# Power MOSFET, N Channel, 150 V, 35 A, 0.0345 ohm, DirectFET MZ, Surface Mount

![Product image](https://novapart.co/image/farnell:2577184/)

**URL**: https://novapart.co/products/IRF6643TRPBF/power-mosfet-n-channel-150-v-35-a-00345-ohm
**SKU**: IRF6643TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.2100
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.02; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MZ |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.0345ohm |
| Gate Source Threshold Voltage Max | 4.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577184/)

DIGITAL AUDIO MOSFET ~~—_____~~ 

IRF6643TRPbF ~~pe~~ 

## ~~TAR Rectifier~~ 

## **Features** 

- Latest MOSFET silicon technology 

- Key parameters optimized for Class-D audio amplifier applications 

- Low RDS(on) for improved efficiency 

- Low Qg for better THD and improved efficiency 

- Low Qrr for better THD and lower EMI 

- Low package stray inductance for reduced ringing and lower EMI 

- Can deliver up to 200 W per channel into 8 Ω load in half-bridge configuration amplifier 

- Dual sided cooling compatible 

- Compatible with existing surface mount technologies 

- RoHS compliant, halogen-free 

- Lead-free (qualified up to 260°C reflow) 

|||**Key Parameters**|**Key Parameters**|**Key Parameters**||
|---|---|---|---|---|---|
|VDS||||150|V|
|RDS(ON)typ. @ V|typ. @ V|typ. @ VGS= 10V|= 10V|29|mΩ|
|Qg typ.|Qg typ.|||39|nC|
|RG(int)typ.||||0.9|Ω|
||MZ||DirectFET®ISOMETRIC|||



Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) 

SH SJ ST SH MQ MX MT MN **MZ** ~~[Eee~~ **Description** This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. 

The IRF6643PbF device utilizes DirectFET[®] packaging technology. DirectFET[®] packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.  The DirectFET[®] package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.  The DirectFET[®] package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF6643TRPbF|DirectFET MediumCan|Tape andReel|4800|IRF6643TRPbF|



|**Absolute Maximum Ratin**<br>~~(I~~|**Absolute Maximum Ratings **<br>~~—~~<br>|~~—~~<br>||
|---|---|---|---|
|~~NNN~~<br>~~(I~~|**Parameter**<br>~~NNN~~<br>~~—~~<br>|**Max.**<br>~~NNN~~<br>~~—~~<br>|**Units**<br>~~NNN~~<br>|
|VGS<br>~~(I~~<br>~~es~~|Gate-to-SourceVoltage<br>~~—~~<br>~~ooo~~|±20<br>~~—~~<br>~~ooo~~|V<br>~~ooo~~|
|ID @TC= 25°C<br>~~(I~~<br>~~es~~<br>~~es~~<br>~~-~~|Continuous Drain Current,VGS @10V<br>~~—~~<br>~~ooo~~<br>~~nn~~|35<br>~~—~~<br>~~ooo~~|<br>A<br>~~ooo~~<br>~~_~~<br>~~i~~|
|ID @TA= 25°C<br><br>~~es~~<br>~~es~~<br>~~-~~|Continuous Drain Current,VGS @10V<br>~~ooo~~<br>~~nn~~|6.2<br>~~ooo~~||
|ID @TA= 70°C<br>~~es~~<br>~~-~~|Continuous Drain Current,VGS @10V<br>~~nn~~|5.0||
|IDM<br>~~-~~<br>~~——~~<br>~~a~~|Pulsed Drain Current<br>~~**a**~~<br>~~ee~~|76<br>~~**a**~~<br>~~i~~||
|PD @TC= 25°C<br>~~-~~<br>~~——~~<br>~~a~~|Power Dissipation<br>~~**a**~~<br>~~ee~~|89<br>~~**a**~~<br>~~i~~|W<br>~~_~~<br>~~i~~|
|PD @TA= 25°C<br>~~——~~<br>~~a~~|Power Dissipation<br>~~**a**~~<br>~~ee~~<br>~~I~~<br>~~(~~|2.8<br>~~**a**~~<br>~~i~~<br>~~(~~||
|PD @TA= 70°C<br>~~——~~<br>~~a~~<br>~~Po~~|Power Dissipation<br>~~**a**~~<br>~~ee~~|1.8<br>~~**a**~~<br>~~i~~||
|EAS<br>~~——~~<br>~~a~~<br>~~Po~~<br>~~rs~~|Single Pulse Avalanche Energy <br>~~**a**~~<br>~~ee~~<br>~~ns~~|50<br>~~**a**~~<br>~~i~~<br>~~ns~~<br>~~I~~|mJ<br>~~i~~<br>~~ns~~|
|IAR<br>~~rs~~|Avalanche Current<br>~~ns~~|7.6<br>~~ns~~<br>~~I~~|A<br>~~ns~~|
|~~rs~~<br>~~ee~~|Linear DeratingFactor<br>~~ns~~<br>~~ee~~|0.022<br>~~ns~~<br>~~I~~<br>~~ee~~<br>~~ee~~|W/°C<br>~~ns~~<br>~~ee~~|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-40  to + 150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|



Notes  through  are on page 9 

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## **Thermal Resistance** 

|**Thermal Resistance**|**Thermal Resistance**|
|---|---|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**||
|RθJA<br>Junction-to-Ambient<br>–––<br>45||
|RθJA<br>Junction-to-Ambient<br>12.5<br>–––||
|RθJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W||
|RθJC<br>Junction-to-Case<br>–––<br>1.4||
|RθJ-PCB<br>Junction-to-PCB Mounted<br>1.0<br>–––||
|**Static@ TJ = 25°C(unless otherwise specified)**<br>**Parameter **<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>150<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>ΔBVDSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>0.18<br>–––<br>V/°C Reference to 25°C,ID= 1.0mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>29<br>34.5<br>mΩ<br>VGS= 10V,ID= 7.6A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>4.0<br>4.9<br>V<br>VDS= VGS, ID= 150µA<br>ΔVGS(th)<br>Gate Threshold Voltage Coefficient<br>–––<br>-11<br>–––<br>mV/°C<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS= 150V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 120V,VGS= 0V,TJ=125°C<br>~~——————— ———<——~~<br>~~—~~<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~oe oe~~<br>~~———~~<br>~~——~~||
|IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V||
|Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V||
|RG<br>Gate Resistance<br>–––<br>0.8<br>–––<br>Ω<br>**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>~~ese~~~~**s**~~<br>~~rn r~~<br>~~Ds~~||
|gfs<br>Forward Transconductance<br>16<br>–––<br>–––<br>S<br>VDS= 10V,ID= 7.6A||
|Qg<br>Total Gate Charge<br>–––<br>39<br>55<br>Qgs1<br>Pre-VthGate-to-Source Charge<br>–––<br>9.6<br>–––<br>VDS= 75V<br>Qgs2<br>Post-Vth Gate-to-Source Charge<br>–––<br>2.2<br>–––<br>VGS= 10V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>11<br>17<br>nC<br>ID= 7.6A<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>16<br>–––<br>Qsw<br>Switch Charge(Qgs2+Qgd)<br>–––<br>13<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>9.2<br>–––<br>tr<br>Rise Time<br>–––<br>5.0<br>–––<br>ns<br>VDD= 75V, VGS= 10V<br>td(off)<br>Turn-Off DelayTime<br>–––<br>13<br>–––<br>ID= 7.6A<br>tf<br>Fall Time<br>–––<br>4.4<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>2340<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>300<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>61<br>–––<br>pF<br>ƒ= 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>1950<br>–––<br>VGS=0V, VDS=1.0V, ƒ=1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>140<br>–––<br>VGS=0V, VDS=80V, ƒ=1.0MHz<br>**Diode Characteristics**<br>~~————————~~<br>~~SSS |~~<br>~~——————~~<br>~~ee~~<br>~~SS~~<br>~~|~~<br>~~ee~~<br>~~Ps~~||
|D<br>S<br>G<br>**Parameter **<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>58<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>76<br>integral reverse<br>(BodyDiode) <br>p-njunction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C,IS= 7.6A,VGS= 0V<br>~~re~~<br>~~—Ee~~||
|trr<br>Reverse RecoveryTime<br>–––<br>67<br>100<br>ns<br>TJ= 25°C, IF= 7.6A,VDD= 50V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>190<br>280<br>nC<br>di/dt = 100A/µs<br>~~ee~~||



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100 100<br>VGS<br>TOP           15V 7.0V<br>7.0V 10V 8.0V<br>BOTTOM 7.0V<br>VGS<br>TOP           15V<br>10V<br>8.0V 10<br>10 BOTTOM 7.0V<br>≤ 60µs PULSE WIDTH<br>≤ 60µs PULSE WIDTH Tj = 150°C<br>1<br>Tj = 25°C<br>1 0.1 1 10 100<br>0.1 1 10 100 VDS, Drain-to-Source Voltage (V)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>Fig 1.   Typical Output Characteristics<br>100 2.5<br>ID = 7.6A<br>T J  = 150°C V GS  = 10V<br>T  = 25°C<br>J 2.0<br>T  = -40°C<br>J<br>10<br>Al i<br>1.5<br>1 745 ae<br>1.0<br>“a V = 10V FALL<br>DS<br>≤ 60µs PULSE WIDTH<br>Je 0.5<br>0.1 | EE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>4.0 5.0 6.0 7.0 8.0<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>12<br>100000<br>VGS   = 0V,       f = 1 MHZ I = 7.6A<br>D<br>Ciss    = Cgs + Cgd,  Cds SHORTED<br>C rss    = C gd  10 VDS= 120V<br>10000 C oss   = C ds  + C gd VDS= 75V<br>8 VDS= 30V<br>Ciss<br>To CY<br>1000 6<br>Coss<br>4<br>100 C rss<br>PE a i—<br>2<br>10 Sta 0 Li<br>1 10 100 0 10 20 30 40<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>) (Α<br>ID, Drain-to-Source Current<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs Gate-to-Source Voltage 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs Gate-to-Source Voltage 3 www.irf.com © 2013 International Rectifier May 31, 2013 ~~x°”””°”»”.©.|}|0OOOOCOCOCCC~~ 

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100 1000<br>= OPERATION IN THIS AREA<br>T J  = 150°C LIMITED BY R DS(on)<br>TJ = 25°C 100<br>10 TJ = -40°C<br>100µsec<br>10<br>1<br>1msec<br>1<br>TA = 25°C<br>V GS  = 0V Tj = 150°CSingle Pulse 10msec<br>0.1 ian(ies 0.1 |<br>0.0 0.4 0.8 1.2 1.6 2.0<br>0.1 1.0 10.0 100.0 1000.0<br>VSD, Source-to-Drain Voltage (V)<br>VDS  , Drain-toSource Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>5.0<br>7.0<br>6.0 4.5<br>5.0<br>4.0<br>4.0 eo =|  ASE<br>CPP REEEEE 3.5 I D  = 250µA ASSP<br>3.0 ID = 150µA<br>PEEL TENG 3.0 EAE<br>2.0 COLE EN \<br>2.5<br>1.0 PCCEEEEEEY {titi<br>2.0<br>PEEEEE ty A<br>0.0  EN -75 LETTE -50 -25 0 25 50 75 ETT 100 125 150<br>25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>TJ , Ambient Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Ambient Temperature 

**Fig 10.** Typical Threshold Voltage vs. Junction Temperature 

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100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1<br>rT a ee SINGLE PULSE en Notes:<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = Pdm x Zthja + Ta<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

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70 45<br>ID = 7.6A TJ= 25°C<br>60 VGS = 7.0V<br>T@R  Scnane TJ = 125°C 40 VGS = 8.0V |,<br>VGS = 10V<br>50 VGS = 15V<br>rN 35<br>40<br>30 A a<br>30 cee TJ = 25°C LL<br>20 Copa 25 «Seer<br>0 10 20 30 40 50<br>4 6 8 10 12 14 16<br>ID, Drain Current (A)<br>VGS, Gate -to -Source Voltage  (V)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>Ω)<br>Typical  RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance vs. Gate Voltage 

**Fig 13.** Typical On-Resistance vs. Drain Current 

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200<br>                 ID<br>TOP         1.5A<br>15V<br>160                3.0A<br>BOTTOM   15A<br>VDS L DRIVER 120 soonava<br>R G D.U.T +<br>- [V][DD] 80<br>IAS A<br>20V<br>o F, tp 0.01 Ω SAKE<br>40<br>a PSA<br>Fig 15a.   Unclamped Inductive Test Circuit<br>0 PSS<br>25 50 75 100 125 150<br>V(BR)DSS(BR)DSS Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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V(BR)DSS(BR)DSS<br>tp<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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IAS<br>**----- End of picture text -----**<br>


**Fig 15b.** Unclamped Inductive Waveforms 

**Fig 16a.** Switching Time Test Circuit 

**Fig 16b.** Switching Time Waveforms 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>, |<br>Vgs(th)<br>root ' !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

**Fig 17b.** Gate Charge Waveform 

**Fig 18.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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## **DirectFET[®] Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation).** 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **DirectFET[®] Outline Dimension, MZ Outline (Medium Size Can, D-Designation).** 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

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DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX  MAX  MAX<br> A 6.25 6.35 0.246 0.250<br> B 4.80 5.05 0.189 0.201<br> C 3.85 3.95 0.152 0.156<br> D 0.35 0.45 0.014 0.018<br> E 0.68 0.72 0.027 0.028<br> F 0.68 0.72 0.027 0.028<br> G 0.93 0.97 0.037 0.038<br> H 0.63 0.67 0.025 0.026<br> J 0.28 0.32 0.011 0.013<br> K 1.13 1.26 0.044 0.050<br> L 2.53 2.66 0.100 0.105<br> M 0.616 0.676 0.0235 0.0274<br> R 0.020 0.080 0.0008 0.0031<br> P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


## **DirectFET[® ] Part Marking** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **DirectFET[® ] Tape & Reel Dimension (Showing component orientation).** 

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LOADED TAPE FEED DIRECTION<br>DIMENSIONS<br>METRIC IMPERIAL<br>NOTE: CONTROLLING<br>DIMENSIONS IN MM CODE  MIN  MAX  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br> B  3.90  4.10 0.154 0.161<br> C 11.90 12.30 0.469 0.484<br> D  5.45  5.55 0.215 0.219<br> E  5.10  5.30 0.201 0.209<br> F  6.50  6.70 0.256 0.264<br> G  1.50  N.C 0.059  N.C<br> H  1.50  1.60 0.059 0.063<br>**----- End of picture text -----**<br>


NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6643TRPBF). For 1000 parts on 7" reel, order   IRF6643TR1PBF 

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REEL DIMENSIONS<br>STANDARD OPTION  (QTY 4800) TR1 OPTION  (QTY 1000)<br>METRIC IMPERIAL METRIC IMPERIAL<br>CODE  MIN  MAX  MIN  MAX  MIN  MAX  MIN  MAX<br>  A 330.0  N.C 12.992  N.C 177.77 N.C 6.9 N.C<br>  B  20.2  N.C 0.795  N.C 19.06 N.C 0.75 N.C<br>  C  12.8  13.2 0.504 0.520 13.5 12.8 0.53 0.50<br>  D   1.5  N.C 0.059  N.C 1.5 N.C 0.059 N.C<br>  E 100.0  N.C 3.937  N.C 58.72 N.C 2.31 N.C<br>  F   N.C  18.4  N.C 0.724 N.C 13.50 N.C 0.53<br>  G  12.4  14.4 0.488 0.567 11.9 12.01 0.47 N.C<br>  H  11.9  15.4 0.469 0.606 11.9 12.01 0.47 N.C<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**||||
|---|---|---|---|
|**Moisture Sensitivity Level**||DirectFET|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**||Yes||



- Qualification standards can be found at International Rectifier’s web site - 

- http://www.irf.com/product info/reliability/ 

- ††    Applicable version of JEDEC standard at the time of product release. 

**Notes:** 

- Repetitive rating;  pulse width limited by max. junction temperature. 

- Starting TJ = 25°C, L = 0.43mH, RG = 25 Ω , IAS = 7.6A. 

- Surface mounted on 1 in. square Cu board. 

- Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- Coss eff. is a fixed capacitance that gives the same charging 

   - Used double sided cooling , mounting pad with large heatsink. 

   - Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

   - TC measured with thermal couple mounted to top 

      - (Drain) of part. 

   - R θ is measured at TJ of approximately 90°C. 

- time as Coss while VDS is rising from 0 to 80% VDSS. 

## **Revision History** 

## **Comments** 

|**Revision Historyy**||
|---|---|
|**Date**|**Commentsmmentsentsntsts**|
|05/30/2013|Converted the data sheet to Class-D Audio formatting template. No change in electrical<br>parameters.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

9 www.irf.com ~~_~~ 

9 www.irf.com © 2013 International Rectifier 

May 31, 2013 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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