# Power MOSFET, N Channel, 20 V, 81 A, 3200 µohm, DirectFET ST, Surface Mount

![Product image](https://novapart.co/image/farnell:2579983/)

**URL**: https://novapart.co/products/IRF6636TRPBF/power-mosfet-n-channel-20-v-81-a-3200-ohm
**SKU**: IRF6636TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8870
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET ST |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 81A |
| Drain Source On State Resistance | 3200µohm |
| Gate Source Threshold Voltage Max | 2.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579983/)

## IRF6636PbF IRF6636TRPbF 

## DirectFET ™ Power MOSFET 

RoHs Compliant 

Lead-Free (Qualified up to 260°C Reflow) 

|**VDSS**<br>**VGS**<br>**RDS(on)**<br>**RDS(on)**|
|---|
|20V max<br>±20V max<br>3.2mΩ@ 10V<br>4.6mΩ@ 4.5V|
|**Qg  tot**<br>**Qgd**<br>**Qgs2**<br>**Qrr**<br>**QossVgs(th)**|
|18nC<br>6.1nC<br>1.9nC<br>7.3nC<br>10nC<br>1.8V|
|~~.~~<br>~~9~~<br>~~:~~<br>~~:~~|
|DirectFET<br>ISOMETRIC<br>~~|~~<br>|:<br>|<br>|<br>ST<br>|<br>™|



Application Specific MOSFETs 

Ideal for CPU Core DC-DC Converters 

Low Conduction Losses High Cdv/dt Immunity 

~~.~~ Dual Sided Cooling Compatible Low Profile (<0.7mm) ~~|~~ Compatible with existing Surface Mount Techniques | 

> Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) ® SQ SX **ST** MQ MX MT ~~LLTCT|~~ 

## **Description** 

The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6636PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge  to minimize losses in the control FET socke t. 

## **Absolute Maximum Ratings** 

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Parameter Max. Units<br>VDS Drain-to-Source Voltage 20 V<br>Se<br>VGS Gate-to-Source Voltage  ±20<br>ID @ TA = 25°C   Continuous Drain Current, VGS @ 10V  18<br>—— ID @ TA = 70°C Continuous Drain Current, VGS @ 10V  ae 15 A<br>Qe ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  81<br>————— IDM Pulsed Drain Current  ee 140<br>EAS Single Pulse Avalanche Energy 28 mJ<br>Se<br>Gn IAR Avalanche Current © 14 A<br>20 6.0<br>ID = 18A 5.0 ID= 14A VDS= 16V<br>15 VDS= 10V<br>4.0<br>Toh | x —_ Ss<br>10 3.0<br>TJ = 125°C<br>2.0<br>5<br><sae |<br>1.0<br>TJ = 25°C<br>0 Pitt. tre 0.0 A<br>0 1 2 3 4 5 6 7 8 9 10 0 10 20 30<br> QG  Total Gate Charge (nC)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 1.    Typical On-Resistance vs. Gate Voltage Fig 2.    Typical Total Gate Charge vs. Gate-to-Source  Voltage<br>Notes:<br>®  Click on this section to link to the appropriate technical paper. )  TC measured with thermocouple mounted to top (Drain) of part.<br>©)  Click on this section to link to the DirectFET Website. ©) Repetitive rating;  pulse width limited by max. junction temperature.<br>(©) Surface mounted on 1 in. square Cu board, steady state. ©  Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 14A.<br>)Ω<br>Typical RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 

www.irf.com 

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05/29/06 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~De~~<br>~~a~~<br>~~De~~|**Parameter**<br>~~(GO~~<br><br>|**Min.**<br>~~(GO~~<br><br>|**Typ.**<br>~~(GO~~<br>~~GO (COG~~<br><br>~~GO~~<br>|**Max. **<br>~~(GO~~<br>~~(COG~~<br><br>~~GO~~<br>|**Units**<br>~~(GO~~<br>~~(COG~~<br><br>~~GO G~~<br>|**Conditions**<br>~~(GO~~<br>~~(COG~~<br><br>~~G~~~~**O**~~<br>|
|---|---|---|---|---|---|---|
|BVDSS<br>~~De~~<br>~~a~~<br>~~De~~|Drain-to-Source Breakdown Voltage<br>~~(GO~~<br>~~es~~<br>|20<br>~~(GO~~<br>~~es~~<br>|–––<br>~~(GO~~<br>~~GO (COG~~<br>~~es~~<br>~~GO~~<br><br>~~GO~~|–––<br>~~(GO~~<br>~~(COG~~<br>~~es~~<br>~~GO~~<br><br>~~(GO~~|V<br>~~(GO~~<br>~~(COG~~<br>~~es~~<br>~~GO G~~<br><br>~~(GO~~|VGS= 0V, ID= 250µA<br>~~(GO~~<br>~~(COG~~<br>~~es~~<br>~~G~~~~**O**~~<br><br>~~Q~~|
|∆ΒVDSS/∆TJ<br>~~a ~~<br>~~De~~|Breakdown Voltage Temp. Coefficient<br> ~~es~~<br>~~(GO~~|–––<br>~~es~~<br>~~(GO~~|15<br>~~GO (COG~~<br>~~es~~<br>~~GO~~<br>~~(GO~~<br>~~GO~~|–––<br>~~(COG~~<br>~~es~~<br>~~GO~~<br>~~(GO~~<br>~~(GO~~|mV/°C<br>~~(COG~~<br>~~es~~<br>~~GO G~~<br>~~(GO~~<br>~~(GO~~|Reference to 25°C, ID= 1mA<br>~~(COG~~<br>~~es~~<br>~~G~~~~**O**~~<br>~~(GO~~<br>~~Q~~|
|RDS(on)<br>~~De~~<br>~~EEE~~|Static Drain-to-Source On-Resistance<br><br>~~EEE~~|–––<br><br>~~EEE~~|3.2<br>~~GO~~<br><br>~~GO ~~<br>~~EEE~~<br>~~ee~~|4.5<br>~~GO~~<br><br> ~~(GO~~<br>~~EEE~~|mΩ<br>~~GO G~~<br><br>~~(GO ~~<br>|VGS= 10V, ID= 18A<br>~~G~~~~**O**~~<br><br> ~~Q~~<br>~~Ee~~|
|||–––<br>~~EEE~~<br>~~a~~|4.6<br>~~EEE~~<br>~~a~~<br>~~ee~~|6.4<br>~~EEE ~~<br>~~a~~||VGS= 4.5V, ID= 14A<br> ~~Ee~~|
|VGS(th)<br>~~cc~~<br>~~es~~|Gate Threshold Voltage<br>~~cc~~<br>|1.55<br>~~cc~~<br>|–––<br>~~ee~~<br>~~cc~~<br>|2.45<br>~~cc~~<br>|V<br>~~cc~~<br>|VDS= VGS, ID= 250µA<br>~~cc~~<br><br>~~EE~~<br>~~"|~~|
|∆VGS(th)/∆TJ<br>~~cc~~<br>~~es~~|Gate Threshold Voltage Coefficient<br>~~cc~~<br>|–––<br>~~cc~~<br><br>~~a~~|-6.4<br>~~cc~~<br>|–––<br>~~cc~~<br><br>~~EE~~|mV/°C<br>~~cc~~<br><br>~~EE~~||
|IDSS<br>~~esEE~~<br>~~_—————————————————EE~~|Drain-to-Source Leakage Current<br>~~EE~~<br>~~_—————————————————EE~~|–––<br>~~EE~~<br>~~a~~|–––<br>~~EE~~<br>~~ee~~|1.0<br>~~EE~~<br>~~EE~~|µA<br>~~EE~~<br>~~EE~~<br>~~_—————————————————EE~~|VDS= 16V, VGS= 0V<br>~~EE~~<br>~~EE~~<br>~~"|~~<br>~~PO~~|
|||–––<br>~~EE~~<br>~~a~~<br>~~_—————————————————EE~~|–––<br>~~EE~~<br>~~ee~~<br>~~_—————————————————EE~~|150<br>~~EE~~<br>~~EE~~<br>~~_—————————————————EE~~||VDS= 16V, VGS= 0V, TJ= 125°C<br>~~EE~~<br>~~EE~~<br>~~"|~~<br>~~PO~~<br>~~_—————————————————EE~~|
|IGSS<br>~~_—————————————————EE~~<br>~~es~~<br>~~Ds~~|Gate-to-Source Forward Leakage<br>~~_—————————————————EE~~|–––<br>~~a~~<br>~~_—————————————————EE~~|–––<br>~~ee~~<br>~~_—————————————————EE~~|100<br>~~EE~~<br>~~_—————————————————EE~~|nA<br>~~EE~~<br>~~_—————————————————EE~~<br>~~QO GO~~|VGS= 20V<br>~~EE~~<br>~~"|~~<br>~~PO~~<br>~~_—————————————————EE~~|
||Gate-to-Source Reverse Leakage<br>~~_—————————————————EE~~<br>~~es~~<br>~~Qe~~|–––<br>~~_—————————————————EE~~<br>~~es~~<br>~~Qe~~|–––<br>~~_—————————————————EE~~<br>~~es~~<br>~~GO~~|-100<br>~~_—————————————————EE~~<br>~~QO~~||VGS= -20V<br>~~_—————————————————EE~~<br>~~PO~~<br>~~GO~~|
|gfs<br>~~_—————————————————EE~~<br>~~es~~<br>~~Ds~~|Forward Transconductance<br>~~_—————————————————EE~~<br>~~es~~<br>~~Qe~~|52<br>~~_—————————————————EE~~<br>~~es~~<br>~~Qe~~|–––<br>~~_—————————————————EE~~<br>~~es~~<br>~~GO~~|–––<br>~~_—————————————————EE~~<br>~~QO~~|S<br>~~_—————————————————EE~~<br>~~QO GO~~|VDS= 10V, ID= 14A<br>~~_—————————————————EE~~<br>~~PO~~<br>~~GO~~|
|Qg<br>~~es~~<br>~~Ds~~<br>~~ee~~|Total Gate Charge<br>~~es ~~<br>~~Qe~~|–––<br> ~~es ~~<br>~~Qe~~|18<br> ~~es~~<br>~~GO~~|27<br>~~QO~~|nC<br>~~QO GO~~<br>~~eG~~<br>~~OO QO~~<br>|See Fig. 15<br>VGS= 4.5V<br>ID= 14A<br>VDS= 10V<br>~~PO~~<br>~~GO~~<br>~~eG~~<br>~~QO~~<br>|
|Qgs1<br>~~Ds~~<br>~~ee~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>~~Qe~~|–––<br>~~Qe~~|5.9<br>~~GO ~~|–––<br> ~~QO~~|||
|Qgs2<br>~~ee~~<br>~~es~~<br>~~ee~~|Post-Vth Gate-to-Source Charge|–––|1.9|–––|||
|Qgd<br>~~es~~<br>~~ee~~<br>~~es~~|Gate-to-Drain Charge|–––|6.1||||
|Qgodr<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate Charge Overdrive<br>~~ne~~|–––<br>~~ne~~|4.1<br>~~ne~~|–––<br>~~ne~~|||
|Qsw<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~De~~|Switch Charge(Qgs2+ Qgd)<br>~~ne~~<br>~~eG~~<br>|–––<br>~~ne~~<br>~~eG~~<br>|8.0<br>~~ne~~<br>~~eG~~<br>|–––<br>~~ne~~<br>~~eG~~<br>|||
|Qoss<br>~~ee~~<br>~~es~~<br>~~De~~<br>~~ee~~|Output Charge<br>~~ne~~<br>~~eG~~<br>|–––<br>~~ne~~<br>~~eG~~<br>|10<br>~~ne~~<br>~~eG~~<br><br>~~GO~~|–––<br>~~ne~~<br>~~eG~~<br><br>~~GOO~~|nC<br>~~eG~~<br>~~OO QO~~<br><br>~~GOO QO~~|VDS= 10V, VGS= 0V<br>~~eG~~<br>~~QO~~<br><br>~~QO~~|
|RG<br>~~es~~<br>~~De~~<br>~~ee~~|Gate Resistance<br>~~eG~~<br>~~(GO~~|–––<br>~~eG~~<br>~~(GO~~|–––<br>~~eG~~<br>~~(GO~~<br>~~GO~~|1.5<br>~~eG~~<br>~~(GO~~<br>~~GOO~~|Ω<br>~~eG~~<br>~~OO QO~~<br>~~(GO~~<br>~~GOO QO~~|~~eG~~<br>~~QO~~<br>~~(GO~~<br>~~QO~~|
|td(on)<br>~~De~~<br>~~ee~~<br>~~es~~|Turn-On DelayTime<br>|–––<br>|14<br><br>~~GO~~|–––<br><br>~~GOO~~|ns<br>~~OO QO~~<br><br>~~GOO QO~~|ID= 14A<br>Clamped Inductive Load<br>See Fig. 16 & 17<br>VDD= 16V, VGS= 4.5V<br>~~QO~~<br><br>~~QO~~<br>@|
|tr<br>~~ee~~<br>~~es~~<br>~~ee~~|Rise Time|–––|19<br>~~GO ~~|–––<br> ~~GOO~~|||
|td(off)<br>~~es~~<br>~~ee~~<br>~~es~~|Turn-Off DelayTime|–––|16|–––|||
|tf<br>~~ee~~<br>~~es~~<br>~~ee~~|Fall Time|–––|6.2|–––|||
|Ciss<br>~~es~~<br>~~ee~~<br>~~es~~|Input Capacitance|–––|2420|–––|pF|VGS= 0V<br>VDS= 10V<br>ƒ= 1.0MHz|
|Coss<br>~~ee~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~es~~|–––<br>~~es~~|780<br>~~es~~|–––<br>~~es~~|||
|Crss<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|360<br>~~es~~|–––<br>~~es~~|||



> Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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Absolute Maximum Ratings<br>O™COYOCCCCOC‘“‘“CSC‘“‘SSTTOOOOCOCOCOC“‘(NSNNNNNNNNN’N’C Parameter Max. Units<br>CT YN’Ss“sé*d<br>> PD @TA = 25°C Power Dissipation  2.2 W<br>PD @TA = 70°C TCOCOOTT.COCOCSC‘“(’NNSCNC(‘*RNNNNs—~*d Power Dissipation  1.4<br>POCO YC<br>© PD @TC = 25°C Power Dissipation  42<br>a TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -40  to + 150<br>TSTG Storag nN e Temperature Range<br>Thermal Resistance<br>Parameter Typ. Max. Units<br>ee<br>O™~—COOYSSC“‘<C(;CWTTTTCtO™~™OT..C‘édRS(‘NYN’:CWdSNSNS“C“‘(‘#$N._ RθJA  Junction-to-Ambient   ––– 58<br>PT<br>© RθJA  Junction-to-Ambient   12.5 –––<br>O™~—COCOYSC“‘<C;NTTTC~tOT™~™OTT..CC‘éz]C(‘®$NYNN’_—=s«d@UC“C(‘$’S. RθJA  Junction-to-Ambient   20 ––– °C/W<br>PT<br>©” RθJC  Junction-to-Case  ––– 3.0<br>a RθJ-PCB  Junction-to-PCB Mounted 1.0 –––<br>OO Linear Derating Factor  0.017 W/°C<br>100<br>D = 0.50<br>eT | | til<br>10 a , 0.20 a aease a a aaeeeeern meee| oflce|| ||| ||<br>esPo 0.050.10 E rritt THI TA<br>1 S S  ra 0.02 a a ||<br>0.01 SS R1 R1 R2 R2 R3 R3 R4 R4 R5R5 Ri (°C/W)   0.6677      0.000066 |  τi (sec)<br>0.1 FT A τJ τJτ1 τ1 Se τ2 τ2 τ3 τ3 τ4 τ4 τ5 τ5 τAτA 1.0463      0.0008961.5612      0.004386<br>Fader ee Pd ee |<br>SINGLE PULSE Ci= τi/Ri 29.2822    0.686180<br>Ci i/Ri<br>0.01 AZ tll ( THERMAL RESPONSE ) ee ei | psia Notes: --—}-—f 25.4550    32<br>c ase eee ee eet | EE ETE 1. Duty Factor D = t1/t2 Seri<br>FHT EFI HE 2. Peak Tj = P dm x Zthja + Tc |<br>0.001 oe il<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

(©) Used double sided cooling , mounting pad. 0) Rθ is measured at () Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

©) Surface mounted on 1 in. square Cu (still air). 

@ Mounted to a PCB with small clip heatsink (still air) 

0) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

www.irf.com 

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1000 1000<br>VGS VGS<br>Sariaeriae TOP           10V Sr Saciae TOP           10V<br>5.0V 5.0V<br>ee tiieeeetiions 4.5V maasiieeeetiila 4.5V<br>4.0V 4.0V<br>3.5V 3.5V<br>3.0V 3.0V<br>100 2.8V 100 2.8V<br>BOTTOM 2.5V BOTTOM 2.5V<br>2A Ye o<br>10 10<br>I M A VT UT C e re | UIT UT<br>e l Ae ee ee<br>2.5V<br>Zaeset 2.5V eeectt ≤60µs PULSE WIDTH emesis SEs ≤60µs PULSE WIDTH Ht<br>Tj = 25°C Tj = 150°C<br>1 ee TTT 1 FAREPE LL ll<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics Fig 5.   Typical Output Characteristics<br>1000 1.5<br>VDS = 10V ID = 18A<br>≤60µs PULSE WIDTH<br>100 tf — L LXK<br>TJ = 150°C Affe<br>10 TJ = 25°C LV| 1.0 Abepza<br>TJ = -40°C<br>1 e e oy ae SS VGS = 10V<br>e eeeeoe es VGS = 4.5V<br>0.1 ea s e 0.5<br>1 2 3 4 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 7.   Normalized On-Resistance vs. Temperature<br>Fig 6.   Typical Transfer Characteristics<br>100000 50<br>F | VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED TJ = 25°C<br>_= CCrss  oss   = C= Cds gd + Cgd 40 i e Vgs = 3.0V Vgs = 3.5V [<br>Vgs = 4.0V<br>10000<br>ee oo ee eeeeo 30 T t | Vgs = 4.5VVgs = 5.0V fo<br>FOF [ELTA] ee ee Vgs = 10V<br>Ciss<br>e ee | 20 i na ;<br>1000 Coss<br>P P RRR<br>ee Crss 10 T TT TT<br>S S eel =<br>100 GhilliePE EE anil 0 -Fras=—s tt ttt 5_<br>1 10 100 0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain Current (A)<br>Typical RDS(on) (Normalized)<br>C, Capacitance(pF)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>)Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>100 100µsec<br>L E S ait me rsee e<br>a= =, 4a Pe S RE<br>10<br>1msec<br>10<br>TJ = 150°C 10 m sec<br>1<br>TJ = 25°C<br>TJ = -40°C<br>1<br>0.1 T A = 25°C<br>H S A ise tl<br>e e VGS = 0V TJ = 150°C H EE ett<br>fe Single Pulse ea eat<br>0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.10 1.00 10.00 100.00<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage Fig11.   Maximum Safe Operating  Area<br>90 2.4<br>80 2.2<br>70 < ~ 4 2.0 R >ee<br>60 1.8<br>50 S SS] 1.6 ER ID = 50µA E<br>40 e s ee ee 1.4 F ER O SCE<br>30 e s 1.2 CP N<br>20 a 1.0 S aaeeeneN<br>r N 0.8 T CEECELEES<br>10<br>0 ee 0.6 C CE ELLE<br>-75 -50 -25 0 25 50 75 100 125 150<br>25 50 75 100 125 150<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

**Fig 13.** Threshold Voltage vs. Temperature 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

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120<br>ID<br>TOP         6.4A<br>100<br>9.8A<br>N EE<br>BOTTOM 14A<br>K U<br>80<br>N LL<br>60<br>40<br>N APE<br>20<br>N EN ETL<br>0 | CPs1<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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L<br>D<br>V<br>DS<br>+<br>V -<br>DD<br>D.U.T<br>V<br>GS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>mi<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 15b.** Gate Charge Waveform 

**==> picture [208 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>—_ oo<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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**==> picture [429 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + /-$—_—______ P.W. Period > ] D = — Period<br>) @    •  Circuit Layout Considerations |t V i GS=10V<br>| | -  •   GroundLow StrayPlane Inductance<br> •   Low Leakage Inductance Oo) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>00 \ i VDD<br>Re •  •   di/dtDriver; controlledsame typebyasRgD.U.T. Vv,DD + Re-AppliedVoltage Body Diode  Forward Drop +<br>•   Isp controlled by Duty Factor "D" - ® t<br>•   D.U.T. - Device Under Test Ripple  ≤ 5% e e ISD<br>**----- End of picture text -----**<br>


**Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

## DirectFET ™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [180 x 138] intentionally omitted <==**

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## DirectFET T™ Outline Dimension, ST Outline (Small Size Can, T-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN MAX fF {| [[ft A 4.75 4.85 0.187 0.191 B 3.70 3.95 0.146 0.156 ee C 2.75 2.85 0.108 0.112 D 0.35 0.45 0.014 0.018 pF {| [|[ff] E 0.58 0.62 0.023 0.024 F 0.58 0.62 0.023 0.024 G 0.75 0.79 0.030 0.031 = H 0.53 0.57 0.021 0.022 J 0.26 0.30 0.010 0.012 K 0.88 0.98 0.035 0.039 L 2.18 2.28 0.086 0.090 = M 0.616 0.676 0.0235 0.0274 R 0.020 0.080 0.0008 0.0031 pF {| [| P 0.08 0.17 0.003 0.007 | ft [ff[|[[4]] 

## DirectFET T™ Part Marking 

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## DirectFET Tl Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6636TRPBF). For 1000 parts on 7" reel, order   IRF6636TR1PBF 

a **REEL DIMENSIONS** STANDARD OPTION **(QTY 4800)** TR1 OPTION **(QTY 1000)** ee METRIC IMPERIAL METRIC IMPERIAL a CODE MIN MAX MIN MAX MIN MAX MIN MAX A 330.0 N.C 12.992 N.C 177.77 N.C 6.9 N.C ee B 20.2 N.C 0.795 N.C 19.06 N.C 0.75 N.C C 12.8 13.2 0.504 0.520 13.5 12.8 0.53 0.50 ee D a 1.5 N.C 0.059 N.C 1.5 N.C 0.059 N.C ee E 100.0 N.C 3.937 N.C 58.72 N.C 2.31 N.C a F N.C 18.4 N.C 0.724 N.C 13.50 N.C 0.53 G 12.4 14.4 0.488 0.567 11.9 12.01 0.47 N.C ee H 11.9 15.4 0.469 0.606 11.9 12.01 0.47 N.C 

Loaded Tape Feed Direction 

|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|
|METRIC||IMPERIAL||
|CODE<br>MIN|MAX|MIN|MAX|
|7.90|8.10|0.311|0.319|
|3.90|4.10|0.154|0.161|
|11.90|12.30|0.469|0.484|
|5.45|5.55|0.215|0.219|
|4.00|4.20|0.158|0.165|
|5.00|5.20|0.197|0.205|
|1.50|N.C|0.059|N.C|
|1.50|1.60|0.059|0.063|



Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/06 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6636TRPBF/power-mosfet-n-channel-20-v-81-a-3200-ohm)
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- [Supplier page](https://es.farnell.com/infineon/irf6636trpbf/mosfet-n-ch-20v-81a-directfet/dp/2579983)
---

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