# Power MOSFET, N Channel, 20 V, 55 A, 5700 ยตohm, DirectFET ST, Surface Mount
**URL**: https://novapart.co/products/IRF6623TRPBF/power-mosfet-n-channel-20-v-55-a-5700-ohm
**SKU**: IRF6623TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: โฌ0.9130
**Stock**: 1000+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET ST |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150ยฐC |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 5700ยตohm |
| Gate Source Threshold Voltage Max | 2.2V |
## Datasheet
๐ [Download PDF](https://novapart.co/datasheet/farnell:2579981RL/)
## IRF6623PbF IRF6623TRPbF
RoHS Compliant (ยฉ)
Lead-Free (Qualified up to 260ยฐC Reflow) Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
## DirectFET Power MOSFET
|**VDSS**|**RDS(on) max**|**Qg(typ.)**|
|---|---|---|
|20V|5.7mโฆ@VGS= 10V|11nC|
||9.7mโฆ@VGS= 4.5V||
**==> picture [81 x 6] intentionally omitted <==**
**----- Start of picture text -----**
DirectFET ISOMETRIC
**----- End of picture text -----**
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX **ST** MQ MX MT ~~=es~~ **Description**
The IRF6623PbF combines the latest HEXFETยฎ Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socke t.
## **Absolute Maximum Ratings**
|**Absolute Maximum Ratings**
~~oe~~
~~TT~~|**Absolute Maximum Ratings**
**Parameter**
~~oecfNNTโ~~|**Max.**|**Units**
~~po~~|
|---|---|---|---|
|VDS
~~oe~~
~~TT~~|Drain-to-Source Voltage
~~oecfNNTโ~~|20|V
~~po~~|
|VGS
~~oe~~
~~TT~~
~~O__-NTvAT.-T-0.0Ww.__".~~|Gate-to-Source Voltage
~~oecfNNTโ~~
~~O__-NTvAT.-T-0.0Ww.__".~~|ยฑ20
~~O__-NTvAT.-T-0.0Ww.__".~~||
|ID@ TC= 25ยฐC
~~oe~~
~~TT~~
~~O__-NTvAT.-T-0.0Ww.__".~~
~~TTToNfNNNโ~~
~~oT;-NNT~~
~~a~~|Continuous Drain Current,VGS@ 10V
~~oecfNNTโ~~
~~O__-NTvAT.-T-0.0Ww.__".~~
~~TTToNfNNNโ~~
~~;-NNT~~
~~a~~|55
~~O__-NTvAT.-T-0.0Ww.__".~~
~~TTToNfNNNโ~~
~~a~~|A
~~po~~
~~TTToNfNNNโ~~
~~7~~
~~:~~
~~a~~
~~a~~|
|ID@ TA= 25ยฐC
~~TTToNfNNNโ~~
~~oT;-NNT~~
~~a~~|Continuous Drain Current,VGS@ 10V
~~TTToNfNNNโ~~
~~;-NNT7~~
~~a~~|16
~~TTToNfNNNโ~~
~~7~~
~~a~~||
|ID@ TA= 70ยฐC
~~oT ;-NNT~~
~~a~~|Continuous Drain Current,VGS@ 10V
~~;-NNT7~~
~~:~~
~~a~~|13
~~7~~
~~:~~
~~a~~||
|IDM
~~a~~
~~โ~~
~~_โK@-โ-~~|Pulsed Drain Current
~~a~~
~~_โK@-โ-~~|120
~~a~~||
|PD@TC= 25ยฐC
~~a~~
~~โ~~
~~_โK@-โ-~~
~~โ~~|Power Dissipation
~~a~~
~~_โK@-โ-~~
~~ee~~|42
~~a~~|W
~~a~~
~~a~~
~~oe~~
~~TT~~
~~โ*>O7~~|
|PD@TA= 25ยฐC
~~โ~~
~~_โK@-โ-~~
~~โ~~
~~oo~~
~~โesรฉeNTWTNT~~|Power Dissipation
~~_โK@-โ-~~
~~ee~~
~~โesรฉeNTWTNT0~~|1.4
||
|PD@TA= 70ยฐC
~~โ~~
~~oo~~
~~โesรฉeNTWTNT~~
~~OOOO~~|Power Dissipation
~~ee~~
~~โesรฉeNTWTNT0TT~~
|2.1
~~TT~~
||
|EAS
~~โ~~
~~oo~~
~~โesรฉeNTWTNT~~
~~OOOO~~
~~TT~~|Single Pulse Avalanche Energy
~~ee~~
~~โesรฉeNTWTNT 0TT~~
~~OOO~~
|43
~~TT~~
~~OOO~~
|mJ
~~oe~~
~~TT~~
~~OOO~~
~~โ*>O7~~
~~โ=xx~~
|
|IAR
~~OOOO ~~
~~OTT~~
~~TT~~|Avalanche Current
~~TT~~
~~OOO~~
~~OTT~~
|40
~~TT~~
~~OOO~~
~~OTT~~
~~|~~|A
~~TT~~
~~OOO~~
~~โ*>O7~~
~~OTT~~
~~โ=xx~~
|
|~~OTT~~
~~TTJ.-_.,_---โeooO.rnvNnwNvโn.-.-...~~|Linear DeratingFactor
~~OTT~~
~~J.-_.,_---โeooO.rnvNnwNvโn.-.-...~~|0.017
~~OTT~~
~~J.-_.,_---โeooO.rnvNnwNvโn.-.-...~~
~~|~~|W/ยฐC
~~OTT~~
~~โ=xx~~
~~J.-_.,_---โeooO.rnvNnwNvโn.-.-...~~|
|TJ
TSTG
~~TT J.-_.,_---โeooO.rnvNnwNvโn.-.-...~~|Operating Junction and
Storage Temperature Range
~~J.-_.,_---โeooO.rnvNnwNvโn.-.-...~~|-40 to + 150
~~J.-_.,_---โeooO.rnvNnwNvโn.-.-...~~
~~|~~|ยฐC
~~โ=xx~~
~~J.-_.,_---โeooO.rnvNnwNvโn.-.-...~~|
www.irf.com
1
5/3/06
**Static @ TJ = 25ยฐC (unless otherwise specified)**
|~~GGG~~|**Parameter**
~~GGG~~|**Min.**
~~GGG~~|**Typ.**
~~GGG~~|**Max. **
~~GGG~~|**Units**
~~GGG~~|**Conditions**
~~GGG~~|
|---|---|---|---|---|---|---|
|BVDSS
~~GGG~~
~~GC~~|Drain-to-Source Breakdown Voltage
~~GGG~~
~~GC~~|20
~~GGG~~
~~GC~~|โโโ
~~GGG~~
~~GC~~|โโโ
~~GGG~~
~~GC~~|V
~~GGG~~
~~GC~~|VGS= 0V,ID= 250ยตA
~~GGG~~
~~GC~~|
|โฮVDSS/โTJ
~~GC~~
~~GO~~|Breakdown Voltage Temp. Coefficient
~~GC~~
~~GO~~|โโโ
~~GC~~
~~GO~~|15
~~GC~~
~~GO~~|โโโ
~~GC~~
~~GO~~|mV/ยฐC
~~GC~~
~~GO~~|Reference to 25ยฐC,ID= 1mA
~~GC~~
~~GO~~|
|RDS(on)
~~GO~~
~~Re~~|Static Drain-to-Source On-Resistance
~~GO~~
~~Re~~
~~**|**~~|โโโ
~~GO~~
~~Re~~|4.4
~~GO~~
~~Re~~|5.7
~~GO~~
~~Re~~|mโฆ
~~GO~~
~~Re~~|VGS= 10V,ID= 15A
~~GO~~
~~Re~~|
|||โโโ
~~Re~~
~~**|**~~|7.5
~~Re~~|9.7
~~Re~~||VGS= 4.5V,ID= 12A
~~Re~~|
|VGS(th)
~~Re~~
~~ff~~|Gate Threshold Voltage
~~Re~~
~~**|**~~
~~ff~~|1.4
~~Re~~
~~**|**~~
~~ff~~|โโโ
~~Re~~
~~ff~~|2.2
~~Re~~
~~ff~~|V
~~Re~~
~~ff~~|VDS= VGS, ID= 250ยตA
~~Re~~
~~ff~~
~~eee~~|
|โVGS(th)/โTJ
~~ff~~
~~a~~|Gate Threshold Voltage Coefficient
~~ff~~
~~se~~|โโโ
~~ff~~
~~se~~|-5.4
~~ff~~
~~se~~|โโโ
~~ff~~
~~se~~
~~ee~~|mV/ยฐC
~~ff~~
~~se~~
~~ee~~||
|IDSS
~~ff~~
~~a~~
~~es~~
~~โโ_โโโโโโโโโโโโโโEE~~|Drain-to-Source Leakage Current
~~ff~~
~~se~~
~~es~~
~~โโ_โโโโโโโโโโโโโโEE~~|โโโ
~~ff~~
~~se~~
~~es~~
|โโโ
~~ff~~
~~se~~
~~es~~
|1.0
~~ff~~
~~se~~
~~es~~
~~ee~~
~~ee~~|ยตA
~~ff~~
~~se~~
~~es~~
~~ee~~
~~ee~~
~~โโ_โโโโโโโโโโโโโโEE~~|VDS= 16V,VGS= 0V
~~ff~~
~~es~~
~~eee~~
~~ee~~|
|||โโโ
~~es~~
~~a~~
~~โโ_โโโโโโโโโโโโโโEE~~|โโโ
~~es~~
~~a~~
~~โโ_โโโโโโโโโโโโโโEE~~|150
~~es~~
~~ee~~
~~aee~~
~~โโ_โโโโโโโโโโโโโโEE~~||VDS= 16V,VGS= 0V,TJ= 125ยฐC
~~es~~
~~eee~~
~~ee~~
~~โโ_โโโโโโโโโโโโโโEE~~|
|IGSS
~~es~~
~~โโ_โโโโโโโโโโโโโโEE~~|Gate-to-Source Forward Leakage
~~es~~
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~|โโโ
~~es~~
~~a~~
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~|โโโ
~~es~~
~~a~~
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~|100
~~es~~
~~ee~~
~~aee~~
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~|nA
~~es~~
~~ee ~~
~~ee~~
~~โโ_โโโโโโโโโโโโโโEE~~
~~cers~~|VGS= 20V
~~es~~
~~eee~~
~~ee~~
~~โโ_โโโโโโโโโโโโโโEE~~|
||Gate-to-Source Reverse Leakage
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~|โโโ
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~|โโโ
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~|-100
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~||VGS= -20V
~~โโ_โโโโโโโโโโโโโโEE~~|
|gfs
~~โโ_โโโโโโโโโโโโโโEE~~
~~GG~~|Forward Transconductance
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~
~~GG~~|34
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~
~~GG~~|โโโ
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~
~~GG~~|โโโ
~~โโ_โโโโโโโโโโโโโโEE~~
~~NG~~
~~GG~~|S
~~โโ_โโโโโโโโโโโโโโEE~~
~~cers~~
~~GG~~|VDS= 10V,ID= 12A
~~โโ_โโโโโโโโโโโโโโEE~~
~~GG~~|
|Qg
~~GG~~
~~a~~|Total Gate Charge
~~GG~~
~~ee~~|โโโ
~~GG~~
~~ee~~|11
~~GG~~
~~ee~~|17
~~GG~~
~~ee~~|nC
~~GG~~|See Fig. 16
VDS= 10V
VGS= 4.5V
ID= 12A
~~GG~~|
|Qgs1
~~a ~~
~~a~~|Pre-Vth Gate-to-Source Charge
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|3.3
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qgs2
~~a ~~
~~a~~|Post-Vth Gate-to-Source Charge
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|1.2
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qgd
~~a ~~
~~a~~|Gate-to-Drain Charge
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|4.0
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qgodr
~~a ~~
~~a~~|Gate Charge Overdrive
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|2.5
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qsw
~~a ~~
~~a~~|Switch Charge(Qgs2+ Qgd)
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|5.2
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qoss
~~a ~~
~~GG~~|Output Charge
~~ee~~
~~GG~~|โโโ
~~ee~~
~~GG~~|8.9
~~ee~~
~~GG~~|โโโ
~~ee~~
~~GG~~|nC
~~GG~~|VDS= 10V,VGS= 0V
~~GG~~|
|td(on)
~~GG~~
~~a~~|Turn-On DelayTime
~~GG~~
~~ee~~|โโโ
~~GG~~
~~ee~~|9.7
~~GG~~
~~ee~~|โโโ
~~GG~~|ns
~~GG~~|Clamped Inductive Load
VDD= 16V, VGS= 4.5V
ID= 12A
~~GG~~
@|
|tr
~~a~~
~~a~~|Rise Time
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|40
~~ee~~
~~ee~~|โโโ
~~ee~~|||
|td(off)
~~a ~~
~~a~~|Turn-Off DelayTime
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|12
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|tf
~~a ~~
~~a~~|Fall Time
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|4.5
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Ciss
~~a ~~
~~a~~|Input Capacitance
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|1360
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|pF|ฦ= 1.0MHz
VGS= 0V
VDS= 10V|
|Coss
~~a ~~
~~a~~|Output Capacitance
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|630
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Crss
~~a ~~
~~a~~|Reverse Transfer Capacitance
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|240
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
Oo) Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25ยฐC, L = 0.61mH,
RG = 25โฆ, IAS = 12A.
Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of part.
Pulse width โค 400ยตs; duty cycle โค 2%. Rฮธ is measured at
) Surface mounted on 1 in. square Cu board. ยฉ Click on this section to link to the appropriate technical paper.
ยฉ Used double sided cooling, mounting pad.
Click on this section to link to the DirectFET Website.
www.irf.com
2
**==> picture [204 x 192] intentionally omitted <==**
**----- Start of picture text -----**
1000
VGS
TOP 10V
5.0V
4.5V
100 ill 4.0V3.5V
ell 3.0V
2.8V
BOTTOM 2.5V
7
10
ae nite A
1 meet e EEeeeeeel
P | re 2.5V Sat il
โค 60ยตs PULSE WIDTH
Tj = 25ยฐC
0.1 fill emt
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 1.** Typical Output Characteristics
**==> picture [204 x 191] intentionally omitted <==**
**----- Start of picture text -----**
1000 PTT [PPP]
ee ee ee ee ee es e es
100 oe T J = 150ยฐC eS SS โ ee
a ee eee
10 oe| |
4242255 ==โ=
TJ = 25ยฐC
1 aneeeeeee fii|i i | | |
pf
VDS = 10V
PE โค 60ยตs PULSE WIDTH
0.1
2.5 3.0 3.5 4.0 4.5 5.0
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 3.** Typical Transfer Characteristics
**==> picture [216 x 197] intentionally omitted <==**
**----- Start of picture text -----**
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000 e e e
e eee
Coss
Crss
LLL P T
100
1 10 100
VDS, Drain-to-Source Voltage (V)
C, Capacitance (pF)
**----- End of picture text -----**
**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage
**==> picture [205 x 191] intentionally omitted <==**
**----- Start of picture text -----**
1000
VGS
TOP 10V
5.0V
4.5V
a ee eeeee 4.0V
3.5V
100 ii Bei 3.0V
2.8V
BOTTOM 2.5V
P|PAggerillaa
10 UVL Ay cat PocoTTT 2.5V | | ||
AZesteo RASer eer
โค 60ยตs PULSE WIDTH
Tj = 150ยฐC
sil lier
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 2.** Typical Output Characteristics
**==> picture [218 x 197] intentionally omitted <==**
**----- Start of picture text -----**
1.5
ID = 15A
VGS = 10V
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (ยฐC)
RDS(on) , Drain-to-Source On Resistance (Normalized)
**----- End of picture text -----**
**Fig 4.** Normalized On-Resistance vs. Temperature
**==> picture [198 x 191] intentionally omitted <==**
**----- Start of picture text -----**
12
ID= 11A VDS= 20V
10 VDS= 10V
86 LY
4
2 = aan
0
0 10 20 30
QG Total Gate Charge (nC)
VGS, Gate-to-Source Voltage (V)
**----- End of picture text -----**
**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage
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3
**==> picture [213 x 427] intentionally omitted <==**
**----- Start of picture text -----**
1000.0 a a a a al
100.0
a es ae
TJ = 150ยฐC
ft 10.0 PpxfFf
pSa f fe|
1.0 TJ = 25ยฐC
nsffGeyโAe ;
/ VGS = 0V
| ff ff
0.1 en) re
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
60
50
o or
40 I PN EEL
30 E LENIN
20 E LE LENE.
10 C CCP
i te ELL
0
25 50 75 100 125 150
TJ , Junction Temperature (ยฐC)
ISD, Reverse Drain Current (A)
ID , Drain Current (A)
**----- End of picture text -----**
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 9.** Maximum Drain Current vs. Case Temperature
**==> picture [214 x 427] intentionally omitted <==**
**----- Start of picture text -----**
1000
= Tn OPERATION IN THIS AREA 7
LIMITED BY R DS(on)
100
Po vw fT
100ยตsec
10 P| A R re ee ee
1msec
areSse 10msec reSene
1 Pl A rt
Tc = 25ยฐC aP t eee el
Tj = 150ยฐC
e p
Single Pulse
PAD pe
0.1 Sati:
0 1 10 100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
2.0
ID = 250ยตA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( ยฐC )
ID, Drain-to-Source Current (A)
VGS(th) Gate threshold Voltage (V)
**----- End of picture text -----**
**Fig 10.** Threshold Voltage vs. Temperature
**==> picture [440 x 204] intentionally omitted <==**
**----- Start of picture text -----**
100
T T
D = 0.50
t omer | Till
0.20
10 m r
i1 0.100.05 rrra a eee ale ||
1 0.02
0.1 i So|S sig et 0.01 fasteeree ee 0ee e Seaw ฯJ ฯJฯ1ฯ1 Si a R1 R el 1 l ฯ2 N ฯR22 R e 2 BO Rฯ33 R ฯ3 3 a n ฯR4ฯ4R4 4 ฯฯ BAeS Ri (ยฐC/W) 2.023 0.00067819.48 0.24023721.78 2.0167 Ba ฯi (sec)
PAA Ci= J, ฯi/Ri L Ll a 14.71 58
if Ci i/Ri ee
0.01 D 220 SINGLE PULSE | Notes: ee
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
el la
0.001 colle ETI los vu ce
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Thermal Response ( Z thJA )
**----- End of picture text -----**
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
4
**==> picture [206 x 197] intentionally omitted <==**
**----- Start of picture text -----**
20
ID = 15A
16
t t
12 {| |
8 TJ = 125ยฐC
AN CE
TJ = 25ยฐC
CSN SS
4 โโ
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
)โฆ
RDS(on), Drain-to -Source On Resistance ( m
**----- End of picture text -----**
**Fig 12.** On-Resistance Vs. Gate Voltage
**==> picture [148 x 97] intentionally omitted <==**
**----- Start of picture text -----**
15V
VDS L DRIVER
RG D.U.T +
- [V][DD]
IAS
20VVGS
tp 0.01โฆ
**----- End of picture text -----**
**Fig 14a.** Unclamped Inductive Test Circuit
**==> picture [235 x 283] intentionally omitted <==**
**----- Start of picture text -----**
LD
VDS
+
VDD -
D.U.T
VGS
Pulse Width < 1ยตs
Duty Factor < 0.1%
Fig 15a. Switching Time Test Circuit
L
VCC
DUT
0
1K
a:
**----- End of picture text -----**
**==> picture [216 x 197] intentionally omitted <==**
**----- Start of picture text -----**
200
ID
TOP 5.2A
160 7.9A
BOTTOM 12A
HH
120
N ae
80
A CCT
40
A Sstr
S s
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (ยฐC)
EAS, Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**Fig 13.** Maximum Avalanche Energy Vs. Drain Current
**==> picture [179 x 261] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
V
DS
90%
10%
V
GS
td(on) tr td(off) tf
**----- End of picture text -----**
**Fig 14b.** Unclamped Inductive Waveforms
**Fig 15b.** Switching Time Waveforms
**==> picture [162 x 131] intentionally omitted <==**
**----- Start of picture text -----**
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
**----- End of picture text -----**
**Fig 16b.** Gate Charge Waveform
**Fig 16a.** Gate Charge Test Circuit
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5
**==> picture [416 x 171] intentionally omitted <==**
**----- Start of picture text -----**
Driver Gate Drive
P.W.
D.U.T + {-$โโโโโโ P.W. Period โโโ โ D = โโ Period
) [@] โข CircuitLow LayoutStray InductConsiderations | t V 1 GS=10V
โข
- โข Low Leakage Inductance @ D.U.T. ISD Waveform
+
Reverse
= Recovery Body Diode Forward
(2) - Current Transformer - + Current Current โข_, di/dt
ยฉ) D.U.T. VDS Waveform Diode Recovery
dv/dt
00 \ + VDD
โข Re-Applied
โข Driver same type as D.U.T. + Voltage Body Diode Forward Drop
Ro ( 4 โข difdt controlled by Re Vpp - a
โข
D.U.T. - Device Under Test es
Ripple โค 5% ISD
Isp controlled by Duty Factor "D" iO) t
**----- End of picture text -----**
**Fig 17.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ยฎ Power MOSFETs
## DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
**==> picture [186 x 146] intentionally omitted <==**
**----- Start of picture text -----**
G = GATE
D = DRAIN
S = SOURCE
YY YY
D D
S
G
(ZA)r 4A 4om PouVY 77 ' nN
S
D D
VA AE a
**----- End of picture text -----**
www.irf.com
6
## DirectFET Tโข Outline Dimension, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
**==> picture [129 x 178] intentionally omitted <==**
**----- Start of picture text -----**
DIMENSIONS
METRIC IMPERIAL
CODE MIN MAX MIN MAX
A 4.75 4.85 0.187 0.191
B 3.70 3.95 0.146 0.156
C 2.75 2.85 0.108 0.112
D 0.35 0.45 0.014 0.018
E 0.58 0.62 0.023 0.024
F 0.58 0.62 0.023 0.024
G 0.75 0.79 0.030 0.031
H 0.53 0.57 0.021 0.022
J 0.26 0.30 0.010 0.012
K 0.88 0.98 0.035 0.039
L 2.18 2.28 0.086 0.090
M 0.616 0.676 0.0235 0.0274
R 0.020 0.080 0.0008 0.0031
P 0.08 0.17 0.003 0.007
**----- End of picture text -----**
## DirectFET Tโข Part Marking
www.irf.com
7
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7" reel, order IRF6623TR1PBF
|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6623TRPBF). For 1000 parts on 7"
reel, order IRF6623TR1PBF|
|---|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**
ee||||||||
|STANDARD OPTION**(QTY 4800)**
es
โโ>โ_โ_โโ_โ_||||TR1 OPTION**(QTY 1000)**
es
$$||||
|โโ>โ_โ_โโ_โ_|METRIC
โโ>โ_โ_โโ_โ_|METRIC
IMPERIAL
โโ>โ_โ_โโ_โ_||METRIC
$$||IMPERIAL
$$||
|MIN
CODE
โโ>โ_โ_โโ_โ_|MIN
MAX
โโ>โ_โ_โโ_โ_|MAX
MIN
โโ>โ_โ_โโ_โ_|MAX
MIN
โโ>โ_โ_โโ_โ_|MIN
$$|MAX
$$|MIN
$$|MAX
$$|
|330.0
A
โโ>โ_โ_โโ_โ_|330.0
N.C
โโ>โ_โ_โโ_โ_|N.C
12.992
โโ>โ_โ_โโ_โ_|N.C
177.77
โโ>โ_โ_โโ_โ_|177.77
$$|N.C
$$|6.9
$$|N.C
$$|
|20.2
B|20.2
N.C|N.C
0.795|N.C
19.06|19.06|N.C|0.75|N.C|
|12.8
C|12.8
13.2|13.2
0.504|0.520
13.5|13.5|12.8|0.53|0.50|
|1.5
D|1.5
N.C|N.C
0.059|N.C
1.5|1.5|N.C|0.059|N.C|
|100.0
E|100.0
N.C|N.C
3.937|N.C
58.72|58.72|N.C|2.31|N.C|
|N.C
F|N.C
18.4|18.4
N.C|0.724
N.C|N.C|13.50|N.C|0.53|
|12.4
G|12.4
14.4|14.4
0.488|0.567
11.9|11.9|12.01|0.47|N.C|
|11.9
H|11.9
15.4|15.4
0.469|0.606
11.9|11.9|12.01|0.47|N.C|
Loaded Tape Feed Direction
|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|
|DIMENSIONS||||
|METRIC||IMPERIAL||
|CODE
MIN|MAX|MIN|MAX|
|7.90|8.10|0.311|0.319|
|3.90|4.10|0.154|0.161|
|11.90|12.30|0.469|0.484|
|5.45|5.55|0.215|0.219|
|4.00
ee|4.20|0.158|0.165|
|5.00
ee
ee
ee|5.20
ee|0.197|0.205|
|1.50
ee
ee
ee
ee
es|N.C
ee
ee|0.059|N.C|
|1.50
ee
ee
ee
es|1.60
ee
ee|0.059|0.063|
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IRโs Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 5/06
www.irf.com
8
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (โBeschaffenheitsgarantieโ) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customerโs compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customerโs products and any use of the product of Infineon Technologies in customerโs applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customerโs technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologiesโ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
- [View this product on Novapart](https://novapart.co/products/IRF6623TRPBF/power-mosfet-n-channel-20-v-55-a-5700-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6623trpbf/mosfet-n-ch-20v-55a-directfet/dp/2579981RL)
---
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