# Power MOSFET, N Channel, 30 V, 55 A, 8100 ยตohm, DirectFET ST, Surface Mount
**URL**: https://novapart.co/products/IRF6617TRPBF/power-mosfet-n-channel-30-v-55-a-8100-ohm
**SKU**: IRF6617TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: โฌ0.7160
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET ST |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150ยฐC |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 8100ยตohm |
| Gate Source Threshold Voltage Max | 2.35V |
## Datasheet
๐ [Download PDF](https://novapart.co/datasheet/farnell:2579979RL/)
## IRF6617PbF IRF6617TRPbF
RoHS Compliant ยฉ)
Lead-Free (Qualified up to 260ยฐC Reflow) Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
> DirectFET โข Power MOSFET
|DirectFET
Power MOSFET
โข|Power MOSFET|
|---|---|
|**VDSS**
**RDS(on) max**|**Qg(typ.)**|
|30V
8.1mโฆ@VGS= 10V|11nC|
|10.3mโฆ@VGS= 4.5V||
|||
|DirectFET
ISOMETRIC
s
D @;
D
ST
โข||
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX **ST** MQ MX MT ~~=es~~ **Description** The IRF6617PbF combines the latest HEXFETยฎ power MOSFET silicon technology with advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8โข and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6617PbF has been optimized for parameters that are critical in synchronous buck converters including RDS(on) and gate charge to minimize losses in the control FET socke t.
## **Absolute Maximum Ratings**
|**Absolute Maximum Ratings**
~~oe~~|**Absolute Maximum Ratings**
**Parameter**
~~oecfNNTโ~~|**Max.**|**Units**
~~pe~~|
|---|---|---|---|
|VDS
~~oe~~
~~oo~~|Drain-to-Source Voltage
~~oecfNNTโ~~
~~ot-oONW~~
|30
~~-oONW~~
|V
~~pe~~|
|VGS
~~oe~~
~~TT~~
~~oo~~|Gate-to-Source Voltage
~~oecfNNTโ~~
~~TT~~
~~ot-oONW~~
|ยฑ20
~~TT~~
~~-oONW~~
||
|ID@ TC= 25ยฐC
~~oe~~
~~TT~~
~~oo~~
~~oT;-NNT~~
~~โ~~|Continuous Drain Current,VGS@ 10V
~~oe~~
~~TT~~
~~ot-oONW~~
~~Ne~~
~~;-NNT~~
~~ee~~|55
~~TT~~
~~-oONW~~
~~Ne~~
~~ee~~|A
~~pe~~
~~ee~~|
|ID@ TA= 25ยฐC
~~oo ~~
~~oT;-NNT~~
~~โ~~|Continuous Drain Current,VGS@ 10V
~~ot -oONW~~
~~Ne~~
~~;-NNT7~~
~~ee~~|14
~~-oONW~~
~~Ne~~
~~7~~
~~ee~~||
|ID@ TA= 70ยฐC
~~oT ;-NNT~~
~~โ~~|Continuous Drain Current,VGS@ 10V
~~Ne~~
~~;-NNT7~~
~~ee~~|11
~~Ne~~
~~7~~
~~ee~~||
|IDM
~~โ~~
~~a~~
~~โ~~
~~_โK@-โ-~~|Pulsed Drain Current
~~ee~~
~~a~~
~~_โK@-โ-~~|120
~~ee~~
~~a~~||
|PD@TC= 25ยฐC
~~โ~~
~~a~~
~~โ~~
~~_โK@-โ-~~|Power Dissipation
~~ee~~
~~a~~
~~_โK@-โ-~~|42
~~ee~~
~~a~~|W
~~ee~~
~~โ*>O7~~|
|PD@TA= 25ยฐC
~~โ~~
~~_โK@-โ-~~
~~โ~~
~~oo~~
~~โesรฉeNTWTNT~~|Power Dissipation
~~_โK@-โ-~~
~~โ~~
~~โesรฉeNTWTNT0~~|2.1
||
|PD@TA= 70ยฐC
~~โ~~
~~oo~~
~~โesรฉeNTWTNT~~
~~OOOO~~|Power Dissipation
~~โ~~
~~โesรฉeNTWTNT0TT~~
|1.4
~~TT~~
||
|EAS
~~oo~~
~~โesรฉeNTWTNT~~
~~OOOO~~
~~dd~~|Single Pulse Avalanche Energy
~~โesรฉeNTWTNT 0TT~~
~~OOO~~|27
~~TT~~
~~OOO~~|mJ
~~OOO~~
~~โ*>O7~~
~~โ=~~|
|IAR
~~OOOO ~~
~~OT~~
~~dd~~|Avalanche Current
~~TT~~
~~OOO~~
~~OT~~|12
~~TT~~
~~OOO~~
~~OT~~|A
~~OOO~~
~~โ*>O7~~
~~OT~~
~~โ=~~|
|~~OT~~
~~dd~~|Linear DeratingFactor
~~OT~~
~~V..--โ-vN7Nv7TATATAT?IACoV@โVCโCVO.Y...โ_~~|0.017
~~OT~~
~~V..--โ-vN7Nv7TATATAT?IACoV@โVCโCVO.Y...โ_~~|W/ยฐC
~~OT~~
~~โ=~~
~~V..--โ-vN7Nv7TATATAT?IACoV@โVCโCVO.Y...โ_~~|
|TJ
TSTG
~~dd~~|Operating Junction and
Storage Temperature Range
~~V..--โ-vN7Nv7TATATAT?IACoV@โVCโCVO.Y...โ_~~|-40 to + 150
~~V..--โ-vN7Nv7TATATAT?IACoV@โVCโCVO.Y...โ_~~|ยฐC
~~โ=~~
~~V..--โ-vN7Nv7TATATAT?IACoV@โVCโCVO.Y...โ_~~|
www.irf.com
1
5/3/06
**Static @ TJ = 25ยฐC (unless otherwise specified)**
|~~a GQ~~|**Parameter**
~~GQ~~|**Min.**
~~GQ~~|**Typ.**
~~GQ~~|**Max. **
~~GQ~~|**Units**
~~GQ~~|**Conditions**
~~GQ~~|
|---|---|---|---|---|---|---|
|BVDSS
~~a GQ~~
~~a~~|Drain-to-Source Breakdown Voltage
~~GQ~~
~~Gs~~|30
~~GQ~~
~~Gs~~|โโโ
~~GQ~~
~~Qe~~|โโโ
~~GQ~~
~~Qe~~|V
~~GQ~~|VGS= 0V,ID= 250ยตA
~~GQ~~|
|โฮVDSS/โTJ
~~a~~
~~a~~|Breakdown Voltage Temp. Coefficient
~~Gs~~
~~Gs~~|โโโ
~~Gs~~
~~Gs~~|25
~~Qe~~
~~Qe~~|โโโ
~~Qe~~
~~Qe~~|mV/ยฐC|Reference to 25ยฐC,ID= 1mA|
|RDS(on)
~~a~~
~~ee~~|Static Drain-to-Source On-Resistance
~~Gs~~
~~ee~~
~~|~~|โโโ
~~Gs~~
~~ee~~
~~ee~~
~~|~~|6.2
~~Qe~~
~~ee~~
~~ee~~
|8.1
~~Qe~~
~~ee~~
~~ee~~
|mโฆ
~~ee~~|VGS= 10V,ID= 15A
~~ee~~
~~ee~~|
|||โโโ
~~ee~~
~~ee~~
~~|||~~|7.9
~~ee~~
~~ee~~
~~||~~|10.3
~~ee~~
~~ee~~
~~||~~||VGS= 4.5V,ID= 12A
~~ee~~
~~ee~~|
|VGS(th)
~~ee~~
~~+~~|Gate Threshold Voltage
~~ee~~
~~|~~
~~+~~|1.35
~~ee~~
~~ee~~
~~|||~~
~~+++4~~|โโโ
~~ee~~
~~ee~~
~~||~~
~~+++4~~|2.35
~~ee~~
~~ee~~
~~||~~
~~+++4~~|V
~~ee~~
~~+++4~~|VDS= VGS, ID= 250ยตA
~~ee~~
~~ee~~
~~+++4~~|
|โVGS(th)/โTJ
~~+~~
~~a~~|Gate Threshold Voltage Coefficient
~~+~~
~~ee~~|โโโ
~~+++4~~
~~ee~~|-5.4
~~+++4~~
~~ee~~|โโโ
~~+++4~~
~~ee~~|mV/ยฐC
~~+++4~~
~~ee~~||
|IDSS
~~+~~
~~a~~
~~ee~~|Drain-to-Source Leakage Current
~~+ ~~
~~ee~~
~~ee~~|โโโ
~~+++4~~
~~ee~~
~~ee~~
~~ee~~
|โโโ
~~+++4~~
~~ee~~
~~ee~~
~~ee~~
|1.0
~~+++4~~
~~ee~~
~~ee~~
~~ee~~
~~ee~~|ยตA
~~+++4~~
~~ee~~
~~ee~~
~~ee~~|VDS= 24V,VGS= 0V
~~+++4~~
~~ee~~
~~ee~~
~~ee~~|
|||โโโ
~~ee~~
~~ee~~
~~a~~|โโโ
~~ee~~
~~ee~~
~~a~~|150
~~ee~~
~~ee~~
~~aee~~||VDS= 24V,VGS= 0V,TJ= 125ยฐC
~~ee~~
~~ee~~
~~ee~~|
|IGSS
~~ee~~
~~โโโโโโโโโโโ_โEE~~
~~a~~|Gate-to-Source Forward Leakage
~~ee~~
~~โโโโโโโโโโโ_โEE~~|โโโ
~~ee~~
~~ee~~
~~a~~
~~โโโโโโโโโโโ_โEE~~|โโโ
~~ee~~
~~ee~~
~~a~~
~~โโโโโโโโโโโ_โEE~~|100
~~ee~~
~~ee~~
~~aee~~
~~โโโโโโโโโโโ_โEE~~|nA
~~ee~~
~~ee~~
~~โโโโโโโโโโโ_โEE~~
~~ce~~
|VGS= 20V
~~ee~~
~~ee~~
~~ee~~
~~โโโโโโโโโโโ_โEE~~|
||Gate-to-Source Reverse Leakage
~~โโโโโโโโโโโ_โEE~~
~~es~~
|โโโ
~~โโโโโโโโโโโ_โEE~~
~~es~~
|โโโ
~~โโโโโโโโโโโ_โEE~~
~~es~~
~~ce~~
|-100
~~โโโโโโโโโโโ_โEE~~
~~es~~
~~ce~~
||VGS= -20V
~~โโโโโโโโโโโ_โEE~~
|
|gfs
~~โโโโโโโโโโโ_โEE~~
~~a~~|Forward Transconductance
~~โโโโโโโโโโโ_โEE~~
~~es~~
~~GG~~|39
~~โโโโโโโโโโโ_โEE~~
~~es~~
~~GG~~|โโโ
~~โโโโโโโโโโโ_โEE~~
~~es~~
~~ce~~
~~GG~~|โโโ
~~โโโโโโโโโโโ_โEE~~
~~es~~
~~ce~~
~~GG~~|S
~~โโโโโโโโโโโ_โEE~~
~~ce~~
~~GG~~|VDS= 15V,ID= 12A
~~โโโโโโโโโโโ_โEE~~
~~GG~~|
|Qg
~~a~~
~~a~~|Total Gate Charge
~~GG~~
~~ee~~|โโโ
~~GG~~
~~ee~~|11
~~ce~~
~~GG~~
~~ee~~|17
~~ce~~
~~GG~~
~~ee~~|nC
~~ce~~
~~GG~~|See Fig. 16
VDS= 15V
VGS= 4.5V
ID= 12A
~~GG~~|
|Qgs1
~~a ~~
~~a~~|Pre-Vth Gate-to-Source Charge
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|3.1
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qgs2
~~a ~~
~~a~~|Post-Vth Gate-to-Source Charge
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|1.0
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qgd
~~a ~~
~~a~~|Gate-to-Drain Charge
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|4.0
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qgodr
~~a ~~
~~a~~|Gate Charge Overdrive
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|2.9
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qsw
~~a ~~
~~a~~|Switch Charge(Qgs2+ Qgd)
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|5.0
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Qoss
~~a ~~
~~a~~|Output Charge
~~ee~~
~~GG~~|โโโ
~~ee~~
~~GG~~|10
~~ee~~
~~GG~~|โโโ
~~ee~~
~~GG~~|nC
~~GG~~|VDS= 15V,VGS= 0V
~~GG~~|
|td(on)
~~a~~
~~a~~|Turn-On DelayTime
~~GG~~
~~ee~~|โโโ
~~GG~~|11
~~GG~~|โโโ
~~GG~~|ns
~~GG~~|Clamped Inductive Load
VDD= 16V, VGS= 4.5V
ID= 12A
~~GG~~
@|
|tr
~~a~~
~~a~~|Rise Time
~~ee~~
~~ee~~|โโโ
~~ee~~|34
~~ee~~|โโโ
~~ee~~|||
|td(off)
~~a ~~
~~a~~|Turn-Off DelayTime
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|12
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|tf
~~a ~~
~~a~~|Fall Time
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|3.7
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Ciss
~~a~~
~~a~~|Input Capacitance
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|1300
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|pF|ฦ= 1.0MHz
VGS= 0V
VDS= 15V|
|Coss
~~a ~~
~~a~~|Output Capacitance
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|430
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
|Crss
~~a ~~
~~a~~|Reverse Transfer Capacitance
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~
~~ee~~|160
~~ee~~
~~ee~~|โโโ
~~ee~~
~~ee~~|||
Repetitive rating; pulse width limited by max. junction temperature. @ Starting TJ = 25ยฐC, L = 0.40mH, RG = 25โฆ, IAS = 12A. Pulse width โค 400ยตs; duty cycle โค 2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of part.
Rฮธ is measured at
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website.
www.irf.com
2
**==> picture [218 x 426] intentionally omitted <==**
**----- Start of picture text -----**
1000
VGS
T m TOP 10V
5.0V
4.5V
aee eee e e e e eeemmaeemmamma 4.0V3.5V3.5V
3.0V2.8V
100 | PA 2.8V
BOTTOM 2.5V
OY
10
S oo el
Z raa TTT
2.5V โค 60ยตs PULSE WIDTH 60ยตs PULSE WIDTH
Tj = 150ยฐC
1 aiiiill
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID = 15AD = 15A= 15A
VGS = 10VGS = 10V= 10V Py Py Py yyy.
1.5 Fy yt] yt] ib
pz
4
LA
1.0 <<)
p=
at
r
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (ยฐC)
ID, Drain-to-Source Current (A)
RDS(on) , Drain-to-Source On Resistance (Normalized)
**----- End of picture text -----**
**==> picture [509 x 664] intentionally omitted <==**
**----- Start of picture text -----**
1000
VGS VGS
S e Seti TOP 10V T m TOP 10V
5.0V 5.0V
4.5V 4.5V
100 Sen eanll 4.0V3.5V aee eee e e e e eeemmaeemmamma 4.0V3.5V3.5V
e ens 3.0V2.8V 100 | PA 3.0V2.8V
BOTTOM 2.5V BOTTOM 2.5V
10
e s ee OY
10
a ie S oo el
1
p ee I Z raa TTT
2.5V
โค 60ยตs PULSE WIDTH โค 60ยตs PULSE WIDTH 60ยตs PULSE WIDTH
2.5V Tj = 25ยฐC Tj = 150ยฐC
0.1 th a 1 aiiiill
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1000.0 2.0
ID = 15AD = 15A= 15A
PPEa [ELLLELL] ee eee VGS = 10VGS = 10V= 10V Py Py Py yyy.
100.0
pitPTT yp| | [ery] | | 1.5 Fy yt] yt] ib
rT LLA LLL pz
10.0 TJ = 150ยฐC
TT AZ 4
Sa ee es ee LA
TJ = 25ยฐC 1.0 <<)
1.0
oe co p=
Say//eeenee at
VDS = 15V
โค 60ยตs PULSE WIDTH
EI
0.1 iyE L r
0.5
1.0 2.0 3.0 4.0 5.0 6.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (ยฐC)
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
10000 12
| VGS = 0V, f = 1 MHZ
_ Ciss = C gs + Cgd, C ds SHORTED ID= 12A VDS= 24V
Crss = Cgd 10 Pp,fe VDS= 15V hE
Coss = Cds + Cgd
8
ee ee | | Via
Ciss
1000 S o HI || 6 Pf|
SL Coss 4 P| Yt | |
2
Crss
0
100
0 5 10 15 20 25 30
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
)(ฮ
ID, Drain-to-Source Current
RDS(on) , Drain-to-Source On Resistance (Normalized)
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
C, Capacitance (pF)
**----- End of picture text -----**
**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
3
**==> picture [213 x 426] intentionally omitted <==**
**----- Start of picture text -----**
1000.0
โ
100.0 Pf tt fe
TJ = 150ยฐC
. 10.0 e y ff A Aa| |
โ โ
ee fe
1.0 Sof TJ = 25ยฐC
pH ey As ey se
eet}A7l sf! |_|
VGS = 0V
0.1 โ / oe oe if} ee Se ee |
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
60
50
S UUEREREEE
40 I PN EEL
30 E LENIN
\
20 E LE LENE.
10 P TLEL ELEN
0
25 50 75 100 125 150
TJ , Junction Temperature (ยฐC)
ISD, Reverse Drain Current (A)
ID , Drain Current (A)
**----- End of picture text -----**
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 9.** Maximum Drain Current vs. Case Temperature
**==> picture [202 x 197] intentionally omitted <==**
**----- Start of picture text -----**
1000
S52eens: OPERATION IN THIS AREA
LIMITED BY RDS(on)
100 siiSeen
10 P a SONSLUM
100ยตsec
INU SL TTT UT
1msec
1 p pepoNSNE N sy
. 10msec
Tc = 25ยฐC
P O Sera
Tj = 150ยฐC
Single Pulse
0.1 sia:ConEL Crono
0 1 10 100 1000
VDS , Drain-toSource Voltage (V)
ID, Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 8.** Maximum Safe Operating Area
**==> picture [213 x 197] intentionally omitted <==**
**----- Start of picture text -----**
2.5
2.0
ID = 250ยตA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( ยฐC )
VGS(th) Gate threshold Voltage (V)
**----- End of picture text -----**
**Fig 10.** Threshold Voltage vs. Temperature
**==> picture [440 x 204] intentionally omitted <==**
**----- Start of picture text -----**
100
a EE SEE Se
D = 0.50
TT HIT
10 0.20
0.10
r | 0.05 a a a ee ee ee | |
1 =Seem 0.020.01 elameseini meee e ฯJ ฯJ R 1 R1 m R at 2 R2 t R 3 R3 R 4 R4 R 5R5 ฯ | ฯ Ri (ยฐC/W) ee 0.6676 0.000066 S| ฯi (sec) |
a eer >t ฯ1ฯ1 5 ฯ2 ฯ2 = ฯ3ฯ3 + ฯ4ฯ4 il ฯ5ฯ5 + โ 1.0462 0.000896 i
0.1 PICA)ae, SS SE ee ee Ci= Ci= ยฉ ฯi/ฯRii/Ri DD 1.5611 0.004386 HM]
29.282 0.68618
eee cf eee eet eee oe i l
\A7
25.455 32
0.01 aa wa SINGLE PULSE EEE ee ee eee Notes: va โes|}
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
a TL EET CEE ee elsul
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Thermal Response ( Z thJA )
**----- End of picture text -----**
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
4
**==> picture [205 x 197] intentionally omitted <==**
**----- Start of picture text -----**
24
ID = 15A
20
|i |
16
\. | fy
12 TJ = 125ยฐC
AN T f
8
a =
TJ = 25ยฐC
| -
4
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
)โฆ
RDS(on), Drain-to -Source On Resistance ( m
**----- End of picture text -----**
**Fig 12.** On-Resistance Vs. Gate Voltage
**==> picture [147 x 97] intentionally omitted <==**
**----- Start of picture text -----**
15V
VDS L DRIVER
RG D.U.T +
- [V][DD]
IAS
20VVGS
tp 0.01โฆ
**----- End of picture text -----**
**Fig 14a.** Unclamped Inductive Test Circuit
LD
**==> picture [135 x 115] intentionally omitted <==**
**----- Start of picture text -----**
VDS
+
VDD -
D.U.T
VGS
Pulse Width < 1ยตs
Duty Factor < 0.1%
ll
**----- End of picture text -----**
**Fig 15a.** Switching Time Test Circuit
**==> picture [126 x 123] intentionally omitted <==**
**----- Start of picture text -----**
Current Regulator
Same Type as D.U.T.
50Kโฆ
12V .2ยตF
.3ยตF
ma D.U.T. +-VDS
VGS
3mA
a
IG ID
Current Sampling Resistors
**----- End of picture text -----**
**Fig 16a.** Gate Charge Test Circuit
**==> picture [216 x 197] intentionally omitted <==**
**----- Start of picture text -----**
120
ID
TOP 5.2A
100
7.9A
H H BOTTOM 12A
80
60 N e e
40
C REE
20
S SC
S ST
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (ยฐC)
EAS, Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**Fig 13.** Maximum Avalanche Energy Vs. Drain Current
**==> picture [180 x 261] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
V
DS
90%
10%
V
GS
td(on) tr td(off) tf
**----- End of picture text -----**
**Fig 14b.** Unclamped Inductive Waveforms
**Fig 15b.** Switching Time Waveforms
**==> picture [162 x 131] intentionally omitted <==**
**----- Start of picture text -----**
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
**----- End of picture text -----**
**Fig 16b.** Gate Charge Waveform
www.irf.com
5
**==> picture [416 x 165] intentionally omitted <==**
**----- Start of picture text -----**
Driver Gate Drive
P.W.
Period D =
+ P.W. Period
D.U.T [$e | n d โโ |t
VGS=10V
) @ โข Circuit Layout Considerations 1
โข
| =] - LowGround StrayPla I n eductance
โข Low Leakage Inductance @ D.U.T. ISD Waveform
+
Reverse
Recovery Body Diode Forward
oH - [1] Current Transformer - ยฎ + Current r Current di/dt NN
00 ยฎ D.U.T. VDS Waveform Diode Recovery y
dv/dt โ VDD
โข Re-Applied
Ro ) โข difdtDriver controlledsame type by Reas D.U.T. Vpp + Voltage Body Diode Forward Drop a
โข -
โข
D.U.T. - Device Under Test es
Isp controlled by Duty Factor "D" iO) t Ripple โค 5% ISD
**----- End of picture text -----**
**Fig 17.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ยฎ Power MOSFETs
## DirectFET โข Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
**==> picture [177 x 128] intentionally omitted <==**
**----- Start of picture text -----**
G = GATE
D = DRAIN
x4
S = SOURCE
D 4 D YY
S
G
| y tate 14 ny
D Z aaa S D 4
**----- End of picture text -----**
www.irf.com
6
## DirectFET Tโข Outline Dimension, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
|| }> ~
xr
ET|| }> ~
xr
ET|| }> ~
xr
ET|| }> ~
xr
ET|
|---|---|---|---|
|DIMENSIONS
ET
|Po||||
|a||IMPERIAL
METRIC||
|CODE
A
B
C
D
a
pF
|
pj
|
pF
|
a||MIN
4.75
3.70
2.75
0.35
MAX
4.85
3.95
2.85
0.45
MIN
0.187
0.146
0.108
0.014
MAX
0.191
0.156
0.112
0.018
|
|lt
{|[Jf
|
|lt||
|E
a||0.58|0.62
0.023
0.024|
|F
a||0.58|0.62
0.023
0.024|
|G
a||0.75|0.79
0.030
0.031|
|H
a||0.53|0.57
0.021
0.022|
|J
a||0.26|0.30
0.010
0.012|
|K
a||0.88|0.98
0.035
0.039|
|L
a||2.18|2.28
0.086
0.090|
|M
a||0.616|0.676
0.0235
0.0274|
|R
a||0.020|0.080
0.0008
0.0031|
|P
a||0.08|0.17
0.003
0.007|
## DirectFET Tโข Part Marking
www.irf.com
7
Tape & Reel Dimension (Showing component orientation).
## DirectFET
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7" reel, order IRF6617TR1PBF
|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6617TRPBF). For 1000 parts on 7"
reel, order IRF6617TR1PBF|
|---|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**
ee
A||||||||
|STANDARD OPTION**(QTY 4800)**
De||||TR1 OPTION**(QTY 1000)**
De
A||||
|De|METRIC
De||IMPERIAL
De|METRIC
De
A||IMPERIAL
De||
|CODE
ee|MIN
ee|MAX
ee|MIN
MAX
ee|MAX
MIN
A
ee|MAX
ee|MIN
MAX
ee|MAX
ee|
|A
ee
a|330.0
ee|330.0
N.C
ee
ee|12.992
N.C
ee
eeee|N.C
177.77
ee
eese|N.C
ee
se|6.9
N.C
ee
se|N.C
ee
se|
|B
a|20.2|N.C
ee|0.795
N.C
eeee|N.C
19.06
eese|N.C
se|0.75
N.C
se|N.C
se|
|C
a
BESSSE5==|12.8
BESSSE5==|13.2
ee
BESSSE5==|0.504
0.520
ee ee
BESSSE5==|12.8
13.5
eese
BESSSE5==|12.8
se
BESSSE5==|0.53
0.50
se
BESSSE5==|0.50
se
BESSSE5==|
|D
BESSSE5==
โโโโ|1.5
BESSSE5==
โโโโ|N.C
BESSSE5==
โโโโ|0.059
N.C
BESSSE5==
โโโโ|N.C
1.5
BESSSE5==
โโโโ|N.C
BESSSE5==|0.059
N.C
BESSSE5==|N.C
BESSSE5==|
|E
BESSSE5==
โโโโ|100.0
BESSSE5==
โโโโ|100.0
N.C
BESSSE5==
โโโโ|3.937
N.C
BESSSE5==
โโโโ|N.C
58.72
BESSSE5==
โโโโ|N.C
BESSSE5==|2.31
N.C
BESSSE5==|N.C
BESSSE5==|
|F
BESSSE5==
โโโโ|N.C
BESSSE5==
โโโโ|18.4
BESSSE5==
โโโโ|N.C
0.724
BESSSE5==
โโโโ|13.50
N.C
BESSSE5==
โโโโ|13.50
BESSSE5==|N.C
0.53
BESSSE5==|0.53
BESSSE5==|
|G
BESSSE5==
โโโโ|12.4
BESSSE5==
โโโโ|14.4
BESSSE5==
โโโโ|0.488
0.567
BESSSE5==
โโโโ|12.01
11.9
BESSSE5==
โโโโ|12.01
BESSSE5==|0.47
N.C
BESSSE5==|N.C
BESSSE5==|
|H
BESSSE5==
โโโโ|11.9
BESSSE5==
โโโโ|15.4
BESSSE5==
โโโโ|0.469
0.606
BESSSE5==
โโโโ|12.01
11.9
BESSSE5==
โโโโ|12.01
BESSSE5==|0.47
N.C
BESSSE5==|N.C
BESSSE5==|
Loaded Tape Feed Direction
**==> picture [117 x 89] intentionally omitted <==**
**----- Start of picture text -----**
DIMENSIONS
METRIC IMPERIAL
CODE MIN MAX MIN MAX
A 7.90 8.10 0.311 0.319
-โ-โ} B C 11.90 3.90 12.30 4.10 | 0.1540.469 0.1610.484
-โ-โ} D E 5.45 4.00 5.55 4.20 | 0.2150.158 0.2190.165
-โ-โ} F 5.00 5.20 | 0.197 0.205
G 1.50 N.C 0.059 N.C
H 1.50 1.60 0.059 0.063
**----- End of picture text -----**
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IRโs Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 5/06
www.irf.com
8
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (โBeschaffenheitsgarantieโ) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customerโs compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customerโs products and any use of the product of Infineon Technologies in customerโs applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customerโs technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologiesโ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
- [View this product on Novapart](https://novapart.co/products/IRF6617TRPBF/power-mosfet-n-channel-30-v-55-a-8100-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6617trpbf/mosfet-n-ch-30v-55a-directfet/dp/2579979RL)
---
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