# Power MOSFET, N Channel, 40 V, 106 A, 5000 µohm, DirectFET MX, Surface Mount

![Product image](https://novapart.co/image/farnell:2579978/)

**URL**: https://novapart.co/products/IRF6616TRPBF/power-mosfet-n-channel-40-v-106-a-5000-ohm
**SKU**: IRF6616TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1100
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0037ohm; Rds(on) Test ; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MX |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 106A |
| Drain Source On State Resistance | 5000µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579978/)

## IRF6616PbF PD IRF6616TRPbF 

DirectFET ower MOSFET 

RoHS compliant containing no lead or bormide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques Lead-Free 

|**VDSS**|**VDSS**|**VGS**|**VGS**|**RDS(on)**|**RDS(on)**|**RDS(on)**|**RDS(on)**|**RDS(on)**|
|---|---|---|---|---|---|---|---|---|
|40V max||±20V max||3.7mΩ@ 10V|||4.6mΩ@ 4.5V||
|**Qg  tot**|**Qgd**||**Qgs2**||**Qrr**|**Qoss**||**Vgs(th)**|
|29nC|9.4nC||2.4nC||33nC|15nC||1.8V|



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DirectFET  ISOMETRIC<br>Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) 0)<br>SQ SX ST MQ MX MT MP<br>LsSO<br>**----- End of picture text -----**<br>


## **Description** 

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom. 

**Absolute Maximum Ratings Parameter Max. Units** ~~—_TW7H 2, —~~ VDS ~~a~~ Drain-to-Source Voltage 40 V VGS ~~a~~ Gate-to-Source Voltage ±20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 19 ~~ee ee~~ ID @ TA = 70°C ~~a~~ Continuous Drain Current, VGS @ 10V 15 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106 ~~a~~ IDM Pulsed Drain Current 150 ~~_———~~ EAS ~~a~~ Single Pulse Avalanche Energy 36 mJ IAR ~~a~~ Avalanche Current 15 A 

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12<br>10 ID = 19A<br>a ee ee<br>8.0 VP TJ = 125°C<br>6.0 CME<br>4.0 a eee<br>2.0 TJ = 25°C<br>FTE e<br>0<br>2.0 4.0 6.0 8.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 1.    Typical On-Resistance vs. Gate Voltage<br>)Ω<br>Typical RDS(on) (m<br>**----- End of picture text -----**<br>


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6<br>ID= 15A<br>5 VDS = 32V | td<br>VDS= 20V<br>4<br>SLL<br>3<br>A<br>2<br>i a ee<br>1<br>0 ps7]Yt| ||<br>0 10 20 30 40<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical  Total Gate Charge vs Gate-to-Source Voltage 

Notes: © Click on this section to link to the appropriate technical paper. ® TC measured with thermocouple mounted to top (Drain) of part. © Click on this section to link to the DirectFET Website. © Repetitive rating;  pulse width limited by max. junction temperature. © Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS =15A. 

www.irf.com 

1 05/23/07 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~ss~~<br>~~a~~|40<br>~~ss~~<br>~~Gn~~|–––<br>~~ss~~|–––<br>~~ss~~<br>~~QO~~|V<br>~~ss~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~ss~~<br>~~QO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~a~~|–––<br>~~Gn~~<br>~~|~~|37<br>~~——~~<br>~~|~~|–––<br>~~QO~~<br>~~——~~<br>|mV/°C<br>~~QO~~<br>|Reference to 25°C, ID= 1mA<br>~~QO~~<br>|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~es~~|–––<br>~~Gn~~<br>~~es~~<br>~~|~~|3.7<br>~~es~~<br>~~——~~<br>~~|~~|5.0<br>~~QO~~<br>~~es~~<br>~~——~~<br>|mΩ<br>~~QO ~~<br>~~es~~<br>~~|~~|VGS= 10V, ID= 19A<br> ~~QO~~<br>~~es~~<br>|
|||–––<br>~~es~~<br>~~|~~|4.6<br>~~es~~<br>~~——~~<br>~~| |~~|6.2<br>~~es~~<br>~~——~~<br>~~|~~||VGS= 4.5V, ID= 15A<br>~~es~~<br>~~|~~<br>~~o~~|
|VGS(th)|Gate Threshold Voltage<br>~~a~~|1.35<br>~~|~~<br>~~a~~|1.8<br>~~——~~<br>~~| ~~<br>~~a~~|2.25<br>~~——~~<br><br>~~a~~|V<br><br>~~a~~|VDS= VGS, ID= 250µA<br><br>~~a~~<br>~~eee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~es~~|–––<br>~~|~~<br>~~es~~<br>~~ree~~|-5.5<br>~~——~~<br>~~| ~~<br>~~es~~<br>~~eee~~|–––<br>~~——~~<br><br>~~es~~<br>~~eee~~|mV/°C<br><br>~~es~~<br>~~Oe~~||
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~<br>~~ree~~<br>~~|~~<br>~~a~~|–––<br>~~ee~~<br>~~eee~~<br>~~|~~<br>|1.0<br>~~ee~~<br>~~eee~~<br><br>~~e~~|µA<br>~~ee~~<br>~~Oe~~<br>~~ee~~|VDS= 32V, VGS= 0V<br>~~ee~~<br>~~eee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~ree~~<br>~~|~~<br>~~a~~|–––<br>~~ee~~<br>~~eee~~<br>~~|eT~~<br>|150<br>~~ee~~<br>~~eee~~<br>~~eT~~<br>~~e~~||VDS= 32V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~<br>~~ee~~|
|IGSS<br>~~PO~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ree ~~<br>~~|~~<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br> ~~eee~~<br>~~|eT~~<br>~~ee~~<br>|100<br>~~ee~~<br>~~eee ~~<br>~~eT~~<br>~~ee~~<br>~~e~~|nA<br>~~ee~~<br> ~~Oe ~~<br>~~ee~~<br>~~ee~~|VGS= 20V<br>~~ee~~<br> ~~eee~~<br>~~ee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~PO~~|–––<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|-100<br>~~ee~~<br>~~e~~||VGS= -20V<br>~~ee~~<br>~~ee~~|
|gfs<br>~~PO~~|Forward Transconductance<br>~~ee~~<br>~~PO~~|75<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~e~~|S<br>~~ee~~<br>~~ee~~|VDS= 20V, ID= 15A<br>~~ee~~<br>~~ee~~|
|Qg<br>~~PO~~|Total Gate Charge<br>~~PO~~<br>~~ee~~|–––<br>~~a ~~<br>~~ee~~|29<br> ~~a~~<br>~~ee~~|44<br>~~e~~<br>~~ee~~|nC<br>~~ee ~~<br>|See Fig. 15<br>VDS= 20V<br>VGS= 4.5V<br>ID= 15A<br> ~~ee~~<br>|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|8.6<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|2.4<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~|9.4<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~|8.6<br>~~ee~~|–––<br>~~ee~~|||
|Qsw<br>~~Pp~~|Switch Charge(Qgs2+ Qgd)<br>~~es~~<br>~~Pp~~|–––<br>~~es~~<br>|12<br>~~es~~<br>|–––<br>~~es~~<br>|||
|Qoss<br>~~Pp~~|Output Charge<br>~~es~~<br>~~PpO—(isi‘“‘“P~~|–––<br>~~es~~<br>~~O—(isi‘“‘“P~~|15<br>~~es~~<br>~~O—(isi‘“‘“P~~|–––<br>~~es~~<br>~~O—(isi‘“‘“P~~|nC<br>~~O—(isi‘“‘“P~~|VDS= 16V, VGS= 0V<br>~~O—(isi‘“‘“P~~|
|RG<br>~~Pp~~|Gate Resistance<br>~~PpO—(isi‘“‘“P~~<br>~~ss~~<br>~~ee~~|–––<br>~~O—(isi‘“‘“P~~<br>~~ss~~|1.3<br>~~O—(isi‘“‘“P~~<br>~~ss~~|–––<br>~~O—(isi‘“‘“P~~<br>~~ss~~|Ω<br>~~O—(isi‘“‘“P~~<br>~~ss~~|~~O—(isi‘“‘“P~~<br>~~ss~~<br>o|
|td(on)|Turn-On DelayTime<br>~~ee~~|–––|15|–––|ns|Clamped Inductive Load<br>ID= 15A<br>VDD= 16V, VGS= 4.5V<br>o|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|19<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|21<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee~~|4.4<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|3765<br>~~ee~~|–––<br>~~ee~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 20V|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|560<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|285<br>~~ee~~|–––<br>~~ee~~|||



> Pulse width ≤ 400µs; duty cycle ≤ 2%. 

> Repetitive rating;  pulse width limited by max. junction temperature. 

www.irf.com 

2 

## **Absolute Maximum Ratings** 

||**Parameter**<br>**Max.**||**Units**|
|---|---|---|---|
|PD @TA= 25°C<br>PD @TA= 70°C<br>PD @TC= 25°C<br>TP<br>TJ<br>TSTG|Power Dissipation<br>Power Dissipation<br>Power Dissipation<br>PeakSolderingTemperature<br>Operating Junction and<br>Storage Temperature Range<br>1.8<br>270<br>-40  to + 150<br>89<br>2.8<br>~~©~~<br>~~a~~<br>~~aSn~~||W<br>°C|
|**Thermal Resistance**||||
|RθJA<br>RθJA<br>RθJA<br>RθJC<br>RθJ-PCB|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>Junction-to-Ambient<br>–––<br>45<br>Junction-to-Ambient<br>12.5<br>–––<br>Junction-to-Ambient<br>20<br>–––<br>°C/W<br>Junction-to-Case<br>–––<br>1.4<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>Linear DeratingFactor<br>W/°C<br>0.022<br>TOt~“‘CS*CSCODSCOCSC‘CNSNCNCSC(W#*NNN<br>~~SY~~<br>~~>~~<br>~~Tt~“CS*SCSCOSCOCSC‘CNCOCOCN.~~<br>~~Ps~~<br>~~PF~~<br>~~OOD~~<br>~~CT~~<br>O™OOCOCOCOCSC“‘(‘SNSNNCNCSCSC(#SYNNNNNN.-<br>~~NE~~<br>~~©~~|||



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100<br>— D = 0.50 mmr i TT<br>10 m e 0.20 A A Sc<br>0.10<br>1 eS EseNTT 0.050.020.01 eeencee———— ee R1 R1 R2 R2 R3 R3 AI R4R4 Ri (°C/W)    τi (sec) iq<br>R m τJ τJ τAτA 1.2801      0.000322<br>0.1 | 2 |SH τ1 τ T 1 T τ2 τ2 T τ3 τ3 T τ4 τ4 |ee [|] 8.7256      0.16479821.750       2.25760 ee<br>SINGLE PULSE Ci= τi/Ri<br>( THERMAL RESPONSE ) Ci τi/Ri 13.251      69<br>0.01 aS ie Gt TET St ot oua= eee eee<br>Notes:<br>1. Duty Factor D = t1/t2<br>0.001 a Per CC iniie 2. Peak Tj = P dm x Zthja + Tc<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

TC measured with thermocouple incontact with top (Drain) of part.C measured with thermocouple incontact with top (Drain) of part. measured with thermocouple incontact with top (Drain) of part. © Rθ is measured at TJ of approximately 90°C.θ is measured at TJ of approximately 90°C.is measured at TJ of approximately 90°C.TJ of approximately 90°C.J of approximately 90°C. of approximately 90°C. 

0) Surface mounted on 1 in. square Cu board, steady state. ® TC measured with thermocouple incontact with top (Drain) of part.C measured with thermocouple incontact with top (Drain) of part. measured with thermocouple incontact with top (Drain) of part. @ Used double sided cooling , mounting pad. © Rθ is measured at TJ of approximately 90°C.θ is measured at TJ of approximately 90°C.is measured at TJ of approximately 90°C.TJ of approximately 90°C.J of approximately 90°C. of approximately 90°C. © Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

® Surface mounted on 1 in. square Cu board  (still air). 

® Mounted to a PCB with small clip heatsink (still air) 

® Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

www.irf.com 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>3.5V<br>A) mat 3.0V<br>100 2.8V<br>BOTTOM 2.5V<br>10 F O TT A<br>Z aii\\aniil<br>2.5V<br>≤ 60µs PULSE WIDTH<br>1 Sieao aa Tj = 25°C a ll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

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1000 Beeeeeeeee<br>100<br>TJ = 150°C<br>| | | | | | ey<br>TJ = 25°C<br>10 TJ = -40°C<br>ee//Aceee<br>Fi tf VA<br>PAP<br>1.0<br>Ht Aify V  || DS = 10V | | |<br>≤ 60µs PULSE WIDTH<br>0.1<br>ALLL<br>1.5 2.0 2.5 3.0 3.5 4.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics<br>100000<br>VGS   = 0V,       f = 1 MHZ<br>= Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>|<br>ee |<br>10000<br>Se F Ciss eersteHee<br>1000 Coss<br>Crss<br>PP tH<br>e e<br>100 ee |<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>3.5V<br>eH HL 3.0V<br>100 2.8V<br>BOTTOM 2.5V<br>2.5V<br>10 A an natill Mall<br>72 a<br>≤ 60µs PULSE WIDTH<br>1 aimeen Tj = 150°C TTT ||<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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2.0<br>ID = 15A<br>O LE<br>VGS = 10V<br>1.5 P y | | Pt | L|<br>Uivaenes VGS = 4.5V en<br>/\ |} A<br>raupud<br>1.0 e T TTT TTT<br>PEELE LEE<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>12<br>T = 25°C<br>J<br>TTT<br>10 Vgs = 3.5V<br>— Vgs = 4.0V A<br>Vgs = 4.5V ty<br>Vgs = 5.0V<br>8<br>6 C Vgs = 10V      CE SamRRR<br>KE<br>4 Pt [Trtrtere]<br>2 PttTi |<br>0 20 40 60 80 100 120 140 160<br>ID, Drain Current (A)<br>)Ω<br>Typical RDS(on) (m<br>Typical RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance vs. Drain Current and Gate Voltage 

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1000.00<br>100.00<br>TJ = 150°C<br>TJ = 25°C<br>TJ = -40°C<br>10.00<br>1.00<br>VGS = 0V<br>0.10<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, Source-to-Drain Voltage (V)<br>Fig 10.   Typical Source-Drain Diode Forward Voltage<br>120<br>mT<br>100<br>80<br>pS<br>60<br>oN<br>NN<br>40<br>20 Ft<br>0<br>Ff + |<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Source-Drain Diode Forward Voltage 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>100<br>10<br>100µsec<br>1msec<br>10msec<br>1<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1<br>0 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig11.** Maximum Safe Operating  Area 

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2.5<br>2.0<br>E NGEE ID  EE = 250µA EE<br>SaSNG Ha aE<br>1.5 SL aaebNeoeIN<br>1.0<br>-75 PLT -50 -25  L 0 TT 25 50  EEN 75 100 125 150<br>TJ , Junction Temperature ( °C )<br>Typical VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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200<br>                 I D<br>TOP          3.7A<br>160                4.3A<br>BOTTOM    15A<br>120<br>80<br>40<br>N Gamm<br>B SR<br>0<br>25 50 75 100 125 150<br>Starting T J, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>i +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

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15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS<br>zak 20V<br>t 0.01Ω<br>p<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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L<br>D<br>V<br>DS<br>+<br>V -<br>DD<br>D.U.T<br>V<br>GS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 15b.** Gate Charge Waveform 

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V(BR)DSS<br>+ tp -><br>C \<br>yt<br>/ \<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + ———, P.W. —— Period<br>VGS=10<br>) ©)    •  Croult Payout Considerations ii<br> •<br>| -  •   Towow LeakageStray InductanceInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>® - B = Current Transformer - ® + Current in Current ™=— di/dt /<br>00 D.U.T. VDS Waveform Diode Recoverydv/dt \ +<br>® VDD<br>•  Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   di/dt controlled by Rg Vop - ee<br>•   D.U.T. - Device Under Test es<br>Ripple  ≤ 5% ISD<br>o” Isp controlled by Duty Factor "D" ® t<br>**----- End of picture text -----**<br>


## **Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

**==> picture [181 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.90 G = GATE<br>x4 D = DRAIN<br>S = SOURCE<br>0.75 1.45<br>D D<br>7<br>S<br>x2 ><br>Las G CD, Ca<br>S<br>D D<br>**----- End of picture text -----**<br>


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## DirectFET ™ Outline Dimension, MX Outline (Medium Size Can, X-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

|KetpO|KetpO|KetpO|KetpO|IMPERIAL<br>METRIC<br>DIMENSIONS<br>pO|
|---|---|---|---|---|
|||||MIN<br>0.246<br>0.189<br>0.152<br>0.014<br>0.027<br>0.027<br>0.054<br>0.032<br>0.015<br>0.035<br>0.090<br>0.0235<br>0.0008<br>0.003<br>MIN<br>6.25<br>4.80<br>3.85<br>0.35<br>0.68<br>0.68<br>1.38<br>0.80<br>0.38<br>0.88<br>2.28<br>0.616<br>0.020<br>0.08<br>MAX<br>6.35<br>5.05<br>3.95<br>0.45<br>0.72<br>0.72<br>1.42<br>0.84<br>0.42<br>1.01<br>2.41<br>0.676<br>0.080<br>0.17<br>CODE<br>A<br>B<br>C<br>D<br>E<br>F<br>G<br>H<br>J<br>K<br>L<br>M<br>R<br>P<br>MAX<br>0.250<br>0.201<br>0.156<br>0.018<br>0.028<br>0.028<br>0.056<br>0.033<br>0.017<br>0.039<br>0.095<br>0.0274<br>0.0031<br>0.007<br>pf<br>|ff<br>ee<br>pf<br>|<br>ft<br>ee<br>ee<br>pf<br>|<br>ft<br>ee<br>pf<br>|<br>ft<br>ee<br>pf<br>|<br>ft<br>ee<br>pf<br>|<br>ft<br>ee<br>pf<br>|<br>ft<br>a|



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NOTE: Controlling dimensions in mm 

**==> picture [225 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
ne REEL DIMENSIONS<br>a STANDARD OPTION  (QTY 4800) ( TR1 OPTION  (QTY 1000)<br>es METRIC IMPERIAL METRIC IMPERIAL<br>CODE  MIN  MAX  MIN  MAX  MIN  MAX  MIN  MAX<br>ey NS SO<br>  A 330.0  N.C 12.992  N.C 177.77 N.C 6.9 N.C<br>es Ca eS<br>  B  20.2  N.C 0.795  N.C 19.06 N.C 0.75 N.C<br>eS OS a C<br>  C  12.8  13.2 0.504 0.520 13.5 12.8 0.53 0.50<br>es Ce QO<br>  D   1.5  N.C 0.059  N.C 1.5 N.C 0.059 N.C<br>es a SO<br>  E 100.0  N.C 3.937  N.C 58.72 N.C 2.31 N.C<br>es a QO<br>  F   N.C  18.4  N.C 0.724 N.C 13.50 N.C 0.53<br>eS CS<br>  G  12.4  14.4 0.488 0.567 11.9 12.01 0.47 N.C<br>es a OO<br>  H  11.9  15.4 0.469 0.606 11.9 12.01 0.47 N.C<br>esSO<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/2007 

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9 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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