# Power MOSFET, N Channel, 40 V, 55 A, 8300 µohm, DirectFET ST, Surface Mount

![Product image](https://novapart.co/image/farnell:2579977RL/)

**URL**: https://novapart.co/products/IRF6614TRPBF/power-mosfet-n-channel-40-v-55-a-8300-ohm
**SKU**: IRF6614TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3900
**Stock**: 10+
**Lead Time**: 63 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 42W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET ST |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 8300µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579977RL/)

IRF6614PbF PD -97080 IRF6614TRPbF 

Typical values (unless DirectFET otherwise specified) Power MOSFET RoHS Compliant **VDSS VGS RDS(on) RDS(on)** Lead-Free (Qualified up to 260°C Reflow) 40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V Application Specific MOSFETs Ideal for CPU Core DC-DC Converters **Qg  tot Qgd Qgs2 Qrr Qoss Vgs(th)** Low Conduction Losses and Switching Losses 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V : | ~~===~~ Low Profile (<0.7mm) Dual Sided Cooling Compatible | Compatible with existing Surface Mount Techniques . | | DirectFET ™ ISOMETRIC ST Applicable DirectFET Outline and  Substrate Outline (see p.7,8 for details) 2) SQ SX **ST** MQ MX MT ~~[| WT TT~~ **Description** 

The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6614PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge  to minimize losses in the control FET socke t. 

## **Absolute Maximum Ratings** 

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Parameter Max. Units<br>VDS a Drain-to-Source Voltage 40 V<br>VGS a Gate-to-Source Voltage  ±20<br>a ID @ TA = 25°C   Continuous Drain Current, VGS @ 10V  12.7<br>—— ID @ TA = 70°C Continuous Drain Current, VGS @ 10V  10.1 pe A<br>a ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  55<br>a—— IDM Pulsed Drain Current  ee 102<br>a EAS Single Pulse Avalanche Energy 22 mJ<br>a IAR Avalanche Current G e G 10.2 A<br>20 12<br>ID = 12.7A ID= 10.2A VDS= 32V<br>10 VDS= 20V<br>16<br>lea<br>8 = L A<br>B r Za|<br>12 6<br>TJ = 125°C<br>4<br>8 T J  = 25°C An<br>pe<br>2<br>4 0<br>y | | | |<br>2.0 4.0 6.0 8.0 10.0 0 10 20 30 40 50<br>VGS, Gate-to-Source Voltage (V)<br> QG  Total Gate Charge (nC)<br>Fig 1.    Typical On-Resistance Vs. Gate Voltage Fig 2.    Typical  Total Gate Charge vs Gate-to-Source Voltage<br>)Ω<br>Typical  RDS(on) (m<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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Fig 2.    Typical  Total Gate Charge vs Gate-to-Source Voltage<br>**----- End of picture text -----**<br>


Notes: © Click on this section to link to the appropriate technical paper. ® TC measured with thermocouple mounted to top (Drain) of part. © Click on this section to link to the DirectFET Website. ©) Repetitive rating;  pulse width limited by max. junction temperature. ° Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 10.2A. 

www.irf.com 

1 

5/5/06 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~PE~~|**Parameter**<br>~~PE~~|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS<br>~~PE~~<br>~~Pe~~|Drain-to-Source Breakdown Voltage<br>~~PE~~<br>~~Pe~~|40<br>~~Pe~~|–––<br>~~Pe~~|–––<br>~~Pe~~|V<br>~~Pe~~|VGS= 0V, ID= 250µA<br>~~Pe~~|
|∆ΒVDSS/∆TJ<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~ee~~|38<br>~~ee~~|–––<br>~~ee~~|mV/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~ee~~|
|RDS(on)<br>~~a~~<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~ee~~|–––<br>~~a~~|5.9<br>~~a~~|8.3<br>~~a~~|mΩ<br>~~a~~<br>~~ee~~|VGS= 10V, ID= 12.7A<br>~~a~~|
|||–––<br>~~a~~<br>~~PT~~<br>~~ee~~|7.1<br>~~a~~<br>~~PT~~<br>~~ee~~|9.9<br>~~a~~<br>~~PT~~<br>~~ee~~||VGS= 4.5V, ID= 10.2A<br>~~a~~<br>~~ee~~|
|VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~ee~~|1.35<br>~~ee~~<br>~~es~~|1.80<br>~~ee~~|2.25<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~|
|∆VGS(th)/∆TJ<br>~~ee~~<br>~~a ~~|Gate Threshold Voltage Coefficient<br>~~ee~~<br> ~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|-5.5<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|mV/°C<br>~~ee~~<br>~~es~~||
|IDSS<br>~~ee~~<br>~~EE~~<br>~~_——————————E~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~EE~~<br>~~_——————————E~~|–––<br>~~ee~~<br>~~es~~<br>~~EE~~|–––<br>~~ee~~<br>~~EE~~|1.0<br>~~ee~~<br>~~EE~~|µA<br>~~ee~~<br>~~EE~~<br> <br>~~_——————————E~~|VDS= 32V, VGS= 0V<br>~~ee~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~a ~~<br>~~_——————————E~~|–––<br>~~EE~~<br> ~~ee~~<br>~~_——————————E~~|150<br>~~EE~~<br>~~ee ~~<br>~~_——————————E~~||VDS= 32V, VGS= 0V, TJ= 125°C<br>~~EE~~<br> ~~ee~~<br>~~_——————————E~~|
|IGSS<br>~~_——————————E~~|Gate-to-Source Forward Leakage<br>~~_——————————E~~|–––<br>~~_——————————E~~|–––<br>~~_——————————E~~|100<br>~~_——————————E~~|nA<br>~~_——————————E~~|VGS= 20V<br>~~_——————————E~~|
||Gate-to-Source Reverse Leakage<br>~~_——————————E~~<br>~~Rs~~|–––<br>~~_——————————E~~<br>~~Rs~~|–––<br>~~_——————————E~~<br>~~Rs~~|-100<br>~~_——————————E~~<br>~~Rs~~||VGS= -20V<br>~~_——————————E~~|
|gfs<br>~~_——————————E~~<br>~~Pe~~<br>~~ee~~<br>~~ee~~|Forward Transconductance<br>~~_——————————E~~<br>~~Pe~~<br>~~es~~<br>|71<br>~~_——————————E~~<br>~~Pe~~<br>~~es~~<br>~~es~~<br>|–––<br>~~_——————————E~~<br>~~Pe~~<br>~~es~~<br>|–––<br>~~_——————————E~~<br>~~Pe~~<br>~~es~~<br>|S<br>~~_——————————E~~<br>~~Pe~~|VDS= 10V, ID= 10.2A<br>~~_——————————E~~<br>~~Pe~~|
|Qg<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~es~~<br><br>|–––<br>~~es~~<br>~~es~~<br><br>~~es~~<br>|19<br>~~es~~<br><br>|29<br>~~es~~<br><br>|nC|See Fig. 15<br>VGS= 4.5V<br>ID= 10.2A<br>VDS= 20V|
|Qgs1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Pre-Vth Gate-to-Source Charge<br>~~es~~<br>~~es~~<br><br>|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br><br>~~es~~<br>|5.9<br>~~es~~<br>~~es~~<br><br>|–––<br>~~es~~<br>~~es~~<br><br>|||
|Qgs2<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Post-Vth Gate-to-Source Charge<br><br>~~es~~<br><br>|–––<br>~~es~~<br><br>~~es~~<br>~~es~~<br>~~es~~<br><br>~~es~~<br>|1.4<br><br>~~es~~<br><br>|–––<br><br>~~es~~<br><br>|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br><br>~~es~~<br><br>|–––<br>~~es~~<br><br>~~es~~<br>~~es~~<br>~~es~~<br><br>~~**es**~~<br>|6.0<br><br>~~es~~<br><br>|–––<br><br>~~es~~<br><br>|||
|Qgodr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate Charge Overdrive<br><br>~~es~~<br>|–––<br>~~es~~<br><br>~~es~~<br>~~es~~<br>~~**es**~~<br>|5.7<br><br>~~es~~<br>|–––<br><br>~~es~~<br>|||
|Qsw<br>~~ee~~<br>~~ee~~|Switch Charge(Qgs2+ Qgd)<br><br>~~es~~|–––<br>~~es~~<br><br>~~**es**~~<br>~~es~~|7.4<br><br>~~es~~|–––<br><br>~~es~~|||
|Qoss<br>~~ee~~<br>~~Pe~~|Output Charge<br><br>~~Pe~~|–––<br>~~**es**~~<br><br>~~Pe~~|9.5<br><br>~~Pe~~|–––<br><br>~~Pe~~|nC<br>~~Pe~~|VDS= 16V, VGS= 0V<br>~~Pe~~|
|RG<br>~~Pe~~<br>~~ee~~|Gate Resistance<br>~~Pe~~<br>~~es~~|–––<br>~~Pe~~<br>~~es~~|1.0<br>~~Pe~~|1.5<br>~~Pe~~|Ω<br>~~Pe~~|~~Pe~~<br>C|
|td(on)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-On DelayTime<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>|13<br>~~es~~<br>|–––<br>~~es~~<br>|ns|ID= 10.2A<br>Clamped Inductive Load<br>VDD= 20V, VGS= 4.5V<br>C|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Rise Time<br>~~es ~~<br>~~es~~<br><br>|–––<br> ~~es~~<br>~~es~~<br>~~es~~<br><br>~~es~~<br>|27<br>~~es~~<br><br>|–––<br>~~es~~<br><br>|||
|td(off)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-Off DelayTime<br>~~es~~<br>~~es~~<br><br>|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br><br>~~es~~<br>|18<br>~~es~~<br>~~es~~<br><br>|–––<br>~~es~~<br>~~es~~<br><br>|||
|tf<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fall Time<br><br>~~es~~<br><br>|–––<br>~~es~~<br><br>~~es~~<br>~~es~~<br>~~es~~<br><br>~~es~~<br>|3.6<br><br>~~es~~<br><br>|–––<br><br>~~es~~<br><br>|||
|Ciss<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Input Capacitance<br><br>~~es~~<br><br>|–––<br>~~es~~<br><br>~~es~~<br>~~es~~<br>~~es~~<br><br>~~**es**~~<br>|2560<br><br>~~es~~<br><br>|–––<br><br>~~es~~<br><br>|pF|VGS= 0V<br>VDS= 20V<br>ƒ= 1.0MHz|
|Coss<br>~~ee~~<br>~~ee~~<br>~~es~~|Output Capacitance<br><br>~~es~~<br>|–––<br>~~es~~<br><br>~~es~~<br>~~es~~<br>~~**es**~~<br>|370<br><br>~~es~~<br>|–––<br><br>~~es~~<br>|||
|Crss<br>~~ee~~<br>~~es~~|Reverse Transfer Capacitance<br><br>~~es~~|–––<br>~~es~~<br><br>~~**es**~~<br>~~es~~|200<br><br>~~es~~|–––<br><br>~~es~~|||



> Repetitive rating;  pulse width limited by max. junction temperature. 

> Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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## **Absolute Maximum Ratings** 

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Parameter Max. Units<br>es<br>a PD @TA = 25°C Power Dissipation  2.1 W<br>PD @TA = 70°C Power Dissipation  1.4<br>es ><br>a PD @TC = 25°C Power Dissipation  42<br>TP  Peak Soldering Temperature 270 °C<br>TJ  Operating Junction and -40  to + 150<br>ie TSTG Storage Temperature Range<br>Thermal Resistance<br>Parameter Typ. Max. Units<br>es ee GQ<br>RθJA  Junction-to-Ambient   ––– 58<br>es<br>RθJA  Junction-to-Ambient   12.5 –––<br>es<br>RθJA  Junction-to-Ambient   20 ––– °C/W<br>es ><br>RθJC  Junction-to-Case  ––– 3.0<br>esee<br>RθJ-PCB  Junction-to-PCB Mounted 1.0 –––<br>es en<br>Linear Derating Factor  0.017 W/°C<br>nsOO<br>100<br>TTOTTO<br>eat || el | | eee OO LLL<br>10 D = 0.50 0.20 neem TM LI<br>0.10<br>= 0.05 {ns ew Ssa — a | | |<br>1 CE 0.02 fC rt R 1 R1 R 2 R2 R 3 R3 R 4 R4 R 5R5 Ri (°C/W)    CLT  τ TTT i (sec)<br>-— Ee 0.01 TLErr ern τJ τJ pp en pp weee τCτ Ld 0.6676       0.000066<br>PHI τ1 τ1 τ2τ2 τ3τ3 τ4τ4 τ5τ5 1.0462       0.000896<br>0.1 |erm PIP Ci= τi/Ri 1.5611       0.004386 |<br>ee eee eeeee Ci= τi/Ri tT] EO |<br>LA 29.282       0.68618<br>25.455       32<br>eal ett ea |<br>0.01 == 4a SINGLE PULSE FARESe i Notes: rl<br>a ( THERMAL RESPONSE ) PA | ETA A ETE P 1. Duty Factor D = t1/t2 T i<br>a ee ee ee elie 2. Peak Tj = P dm x Zthja + Tc |]<br>a ee ee eee ll<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 3.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Surface mounted on 1 in. square Cu board, steady state. O) Mounted on minimum footprint full size board with metalized TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. Used double sided cooling, mounting pad with large heatsink. @ Rθ is measured at Ty of approximately 90°C. 

® Surface mounted on 1 in. square Cu board  (still air). 

© Mounted to a PCB with small clip heatsink (still air) 

©) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

www.irf.com 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>100 4.5V<br>4.0V<br>3.5V<br>3.0V<br>2.5V<br>10 BOTTOM 2.3V<br>1<br>2.3V<br>0.1<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 alll maenenenin<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>100.0<br>——<br>TJ = 150°C<br>TJ = 25°C<br>10.0 Baieee T J  = -40°C 4/eee<br>1.0<br>VDS = 15V<br>≤ 60µs PULSE WIDTH<br>A p<br>0.1<br>1.5 2.0 2.5 3.0 3.5 4.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 6.   Typical Transfer Characteristics<br>4000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>3000 C oss   = C ds  + C gd<br>Ciss<br>2000<br>1000<br>LAME LT<br>Coss<br>Crss<br>0 Pr r t pt|lf<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           10V<br>5.0V<br>4.5V<br>4.0V<br>3.5V<br>3.0V<br>100 2.5V<br>BOTTOM 2.3V<br>10<br>2.3V<br>≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>1 ill eee<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Output Characteristics 

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2.0<br>ID = 12.7A<br>VGS = 10V<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>30<br>TA= 25°C<br>25 V GS  = 3.0V<br>VGS = 3.5V<br>VGS = 4.0V<br>20 V GS  = 4.5V<br>VGS = 5.0V<br>VGS = 10V<br>15<br>A TAS<br>10<br>———————<br>5<br>0 20 40 60 80<br>ID, Drain Current (A)<br>Ω)<br>Typical  RDS(on) (m<br>Typical  RDS(on) (Normalized)<br>**----- End of picture text -----**<br>


**Fig 7.** Normalized On-Resistance vs. Temperature 

**Fig 9.** Typical On-Resistance Vs. Drain Current and Gate Voltage 

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aon IRF6614P<br>100.0 1000<br>OPERATION IN THIS AREA<br>———— DF<br>ait LIMITED BY R an DS(on)<br>100<br>10.0 100µsec<br>TJ = 150°C<br>TJ = 25°C 10<br>— —— TJ = -40°C — s sid 1mse c<br>DC<br>1.0 Bilis 10msec Se c a<br>— ea<br>1<br>Tc = 25°C<br>Tj = 175°C<br>0.1 PR VGS = 0V 0.1 Single Pulse 1 AC<br>0.2 0.6 1.0 1.4 1.8 2.2 0.01 0.10 1.00 10.00 100.00<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>Fig 10.   Typical Source-Drain Diode Forward Voltage Fig11.   Maximum Safe Operating  Area<br>60 2.5<br>50<br>Coo<br>2.0<br>40<br>PRE<br>ID = 250µAD = 250µA= 250µA<br>30 ELPN EE 1.5<br>20<br>LTTE TENG<br>1.0<br>10 PELL ETT<br>0 FETT ELE LLT 0.5<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br>TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID  , Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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2.5<br>2.0<br>ID = 250µAD = 250µA= 250µA<br>1.5<br>1.0<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Drain Current vs. Case Temperature 

**Fig 13.** Typical Threshold Voltage vs. Junction Temperature 

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100<br>                 I D<br>TOP         4.3A<br>80                6.4A<br>BOTTOM   10.2A<br>60 a,<br>40 Bunn<br>20<br>SNeee<br>SS<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy Vs. Drain Current 

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L<br>VCC<br>DUT<br>0<br>1K<br>|- |oe:<br>Fig 15a.   Gate Charge Test Circuit<br>15V<br>L DRIVER<br>VDS<br>D.U.T +<br>- [V][DD]<br>IAS A<br>20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 15a.** Gate Charge Test Circuit 

**Fig 16b.** Unclamped Inductive Test Circuit 

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L<br>D<br>V<br>DS<br>+<br>V -<br>DD<br>D.U.T<br>V<br>GS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>a<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 15b.** Gate Charge Waveform 

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V(BR)DSS<br>< tp ><br>IAS<br>Fig 16c.   Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>a a<br>**----- End of picture text -----**<br>


**Fig 16c.** Unclamped Inductive Waveforms 

**Fig 17a.** Switching Time Test Circuit 

**Fig 17b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period s y D = ——. Period<br>) @    •  Circuit Layout Considerations |t V i GS=10V<br>| | -  •   GroundpleneLow Si Indi<br> •   Low Leakage Inductance Oo) D.U.T. ISD Waveform<br>+<br>Reverse<br>- a Current Transformer - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt<br>® D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>00 \ i VDD<br>Re •  •   Driver same type as D.U.T. V + Re-AppliedVoltage Body Diode  Forward Drop =<br>( 4 •   di/dt controlled by Rg DD -<br>•   D.U.T. - Device Under Test es ae<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ® t<br>**----- End of picture text -----**<br>


**Fig 18.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

## DirectFET ™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [190 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>7<br>S<br>G<br>S<br>D D<br>**----- End of picture text -----**<br>


www.irf.com 

7 

## DirectFET ™ Outline Dimension, ST Outline (Small Size Can, T-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

|DIMENSIONS<br>ee<br>ee<br>ee|DIMENSIONS<br>ee<br>ee<br>ee|
|---|---|
|IMPERIAL<br>METRIC<br>ee<br>ee<br>ee<br>|<br>tf||
|CODE<br>MIN<br>MAX<br>MIN<br>ee<br>ee<br>ee<br>|<br>tf<br>|<br>||MAX<br>ee|
|4.75<br>4.85<br>0.187<br>|<br>tf<br>|<br>|<br>|<br>||0.191|
|3.70<br>3.95<br>0.146<br>|<br>|<br>|<br>||0.156|
|2.75<br>2.85<br>0.108<br>|<br>||0.112|
|0.35<br>0.45<br>0.014|0.018|
|0.58<br>0.62<br>0.023|0.024|
|0.58<br>0.62<br>0.023<br>|<br>||0.024|
|0.75<br>0.79<br>0.030<br>|<br>|<br>|<br>||0.031|
|0.53<br>0.57<br>0.021<br>|<br>|<br>|<br>|<br>|<br>||0.022|
|0.26<br>0.30<br>0.010<br>|<br>|<br>|<br>|<br>|<br>||0.012|
|0.88<br>0.98<br>0.035<br>|<br>|<br>|<br>||0.039|
|2.18<br>2.28<br>0.086<br>|<br>||0.090|
|0.616<br>0.676<br>0.0235|0.0274|
|0.020<br>0.080<br>0.0008|0.0031|
|0.020<br>0.080<br>0.0008|0.0031|
|0.08<br>0.17<br>0.003|0.007|



## DirectFET ™ Part Marking 

www.irf.com 

8 

## DirectFET ™ Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7" reel, order   IRF6614TR1PBF 

|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|NOTE: Controlling dimensions in mm<br>Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 1000 parts on 7"<br>reel, order   IRF6614TR1PBF|
|---|---|---|---|---|---|---|---|
|**REEL DIMENSIONS**<br>ed||||||||
|**REEL DIMENSIONS**<br>ed||||||||
|STANDARD OPTION**(QTY 4800)**<br>es||||TR1 OPTION**(QTY 1000)**<br>es||||
|es|METRIC<br>es||IMPERIAL<br>es|METRIC<br>es||IMPERIAL<br>es||
|MIN<br>CODE<br>ee|MIN<br>ee|MAX<br>MIN<br>ee|MIN<br>MAX<br>ee|MAX<br>MIN<br>ee|MIN<br>MAX<br>ee|MIN<br>ee|MAX<br>ee|
|330.0<br>A<br>ee|330.0<br>ee|N.C<br>12.992<br>ee|12.992<br>N.C<br>ee|N.C<br>177.77<br>ee|6.9<br>N.C<br>ee|6.9<br>ee|N.C<br>ee|
|20.2<br>B<br>ee<br>==|20.2<br>ee<br>==|N.C<br>0.795<br>ee<br>==|0.795<br>N.C<br>ee<br>==|N.C<br>19.06<br>ee<br>==|0.75<br>N.C<br>ee<br>==|0.75<br>ee<br>==|N.C<br>ee<br>==|
|12.8<br>C<br>==|12.8<br>==|13.2<br>0.504<br>==|0.504<br>0.520<br>==|12.8<br>13.5<br>==|0.53<br>12.8<br>==|0.53<br>==|0.50<br>==|
|1.5<br>D<br>==|1.5<br>==|N.C<br>0.059<br>==|0.059<br>N.C<br>==|N.C<br>1.5<br>==|0.059<br>N.C<br>==|0.059<br>==|N.C<br>==|
|100.0<br>E<br>==|100.0<br>==|N.C<br>3.937<br>==|3.937<br>N.C<br>==|N.C<br>58.72<br>==|2.31<br>N.C<br>==|2.31<br>==|N.C<br>==|
|N.C<br>F<br>==<br>ee|N.C<br>==<br>ee|18.4<br>N.C<br>==<br>ee|N.C<br>0.724<br>==<br>ee|13.50<br>N.C<br>==<br>ee|N.C<br>13.50<br>==<br>ee|N.C<br>==<br>ee|0.53<br>==<br>ee|
|12.4<br>G<br>ee|12.4<br>ee|14.4<br>0.488<br>ee|0.488<br>0.567<br>ee|12.01<br>11.9<br>ee|0.47<br>12.01<br>ee|0.47<br>ee|N.C<br>ee|
|11.9<br>H<br>ee|11.9<br>ee|15.4<br>0.469<br>ee|0.469<br>0.606<br>ee|12.01<br>11.9<br>ee|0.47<br>12.01<br>ee|0.47<br>ee|N.C<br>ee|



## Loaded Tape Feed Direction 

**==> picture [115 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE  MIN  MAX  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br> B  3.90  4.10 0.154 0.161<br> C 11.90 12.30 0.469 0.484<br> D ++  5.45  5.55 0.215 0.219<br> E  4.00  4.20 0.158 0.165<br> F ++  5.00  5.20 0.197 0.205<br> G  1.50  N.C 0.059  N.C<br> H E+  1.50  1.60 0.059 + 0.063 4]<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/06 

www.irf.com 

9 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irf6614trpbf/mosfet-n-ch-40v-55a-directfet/dp/2579977RL)
---

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