# Power MOSFET, N Channel, 40 V, 150 A, 3400 µohm, DirectFET MT, Surface Mount

![Product image](https://novapart.co/image/farnell:2579976/)

**URL**: https://novapart.co/products/IRF6613TRPBF/power-mosfet-n-channel-40-v-150-a-3400-ohm
**SKU**: IRF6613TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9310
**Stock**: 1000+
**Lead Time**: 176 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET MT |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 3400µohm |
| Gate Source Threshold Voltage Max | 2.25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579976/)

## IRF6613PbF IRF6613TRPbF 

> DirectFET ™ Power MOSFET 

RoHS Compliant 0) Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs 

Ideal for CPU Core DC-DC Converters 

Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques 

|**VDSS**|**RDS(on) max**|**Qg(typ.)**|
|---|---|---|
|40V|3.4mΩ@VGS= 10V|42nC|
||4.1mΩ@VGS= 4.5V||
||||
|||DirectFET<br>ISOMETRIC<br>es<br>|<br>=<br>.||



Applicable DirectFET Outline and  Substrate Outline (see p.8,9 for details) 

SQ SX ST MQ MX **MT Description** The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET[TM] packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.  The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. 

The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.  The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications . 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>**Parameter**<br>**Units**<br>VDS<br>Drain-to-Source Voltage<br>V<br>VGS<br>Gate-to-Source Voltage<br>ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V<br>ID@ TA= 25°C<br>Continuous Drain Current,VGS@ 10V<br>A<br>ID@ TA= 70°C<br>Continuous Drain Current,VGS@ 10V<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Power Dissipation<br>PD@TA= 25°C<br>Power Dissipation<br>PD@TA= 70°C<br>Power Dissipation<br>W<br>EAS<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>Linear DeratingFactor<br>W/°C<br>0.022<br>1.8<br>200<br>18<br>89<br>2.8<br>**Max.**<br>23<br>18<br>180<br>±20<br>40<br>150<br>~~a~~<br>~~xxTs_.~~<br>~~oo>o™=7~~<br>~~a~~<br>~~yp~~<br>~~**a**~~<br>~~i~~<br>~~a~~<br>~~Le—~~<br>~~ee~~<br>~~oo~~<br>~~LeSS~~<br>~~Fe~~<br>~~—X~~|
|---|
|TJ<br>Operating Junction and<br>°C<br>-40  to + 150|
|TSTG<br>Storage Temperature Range|
|**Thermal Resistance**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJA<br>Junction-to-Ambient<br>–––<br>45<br>RθJA<br>Junction-to-Ambient<br>12.5<br>–––<br>RθJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W<br>RθJC<br>Junction-to-Case<br>–––<br>1.4<br>RθJ-PCB<br>Junction-to-PCB Mounted<br>1.0<br>–––<br>~~O- DD oOo>o*F7~~<br>~~ee~~<br>~~,__ X~~<br>~~a~~<br>~~—————————~~<br>~~ae~~<br>~~—’™-’--——ee~~<br>~~ee~~<br>~~_ —D=£ai{xqg]~~<br>~~FS~~<br>~~o*™omlo~~|
|Notes<br>through<br>are on page 2<br>0)<br>(0)|
|www.irf.com<br>1|



7/3/06 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max. **<br>~~es~~|**Units**<br>~~es~~|**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~Gs~~|40<br>~~Gs~~|–––|–––|V|VGS= 0V,ID= 250µA|
|∆ΒVDSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~Gs~~|–––<br>~~Gs~~|38|–––|mV/°C|Reference to 25°C,ID= 1mA|
|RDS(on)<br>~~a~~<br>~~SS~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~SS~~<br>|–––<br>~~a~~|2.6<br>~~a~~<br>~~a~~|3.4<br>~~a~~|mΩ<br>~~a~~<br>~~ee~~<br>|VGS= 10V,ID= 23A<br>~~a~~<br>~~ee~~<br>~~ee~~|
|||–––<br>~~a~~<br>~~a~~<br>|3.1<br>~~a~~<br>~~a~~<br>~~a~~<br>|4.1<br>~~a~~<br>~~a~~<br>||VGS= 4.5V,ID= 18A<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|VGS(th)<br>~~SS~~<br>~~a~~|Gate Threshold Voltage<br>~~SS~~<br>|1.35<br><br>~~ee~~|–––<br>~~a~~<br><br>~~ee~~|2.25<br><br>~~ee~~|V<br>~~ee~~<br>|VDS= VGS, ID= 250µA<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|∆VGS(th)/∆TJ<br>~~SS~~<br>~~a~~|Gate Threshold Voltage Coefficient<br>~~SS~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|-5.8<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|mV/°C<br>~~ee~~<br>~~ee~~||
|IDSS<br>~~SS~~<br>~~a~~<br>~~a~~<br>~~————————————————EE~~|Drain-to-Source Leakage Current<br>~~SS~~<br><br>~~a~~<br>~~————————————————EE~~|–––<br><br>~~ee~~<br>~~a~~<br>|–––<br><br>~~ee~~<br>~~a~~<br>|1.0<br><br>~~ee~~<br>~~a~~<br>~~ee~~|µA<br>~~ee~~<br><br>~~a~~<br>~~ee~~<br>~~————————————————EE~~|VDS= 32V,VGS= 0V<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~|
|||–––<br>~~a~~<br>~~a~~<br>~~————————————————EE~~|–––<br>~~a~~<br>~~a~~<br>~~————————————————EE~~|150<br>~~a~~<br>~~aee~~<br>~~————————————————EE~~||VDS= 32V,VGS= 0V,TJ= 125°C<br>~~a~~<br>~~ee~~<br>~~————————————————EE~~|
|IGSS<br>~~————————————————EE~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~————————————————EE~~|–––<br><br>~~————————————————EE~~<br>~~es~~|–––<br><br>~~————————————————EE~~|100<br>~~ee~~<br>~~————————————————EE~~<br>~~ce~~|nA<br>~~ee~~<br>~~————————————————EE~~<br>~~ce~~|VGS= 20V<br>~~ee~~<br>~~————————————————EE~~|
||Gate-to-Source Reverse Leakage<br>~~————————————————EE~~<br>~~es~~|–––<br>~~————————————————EE~~<br>~~es~~<br>~~es~~|–––<br>~~————————————————EE~~<br>~~es~~|-100<br>~~————————————————EE~~<br>~~es~~<br>~~ce~~||VGS= -20V<br>~~————————————————EE~~|
|gfs<br>~~————————————————EE~~<br>~~a~~<br>~~es~~|Forward Transconductance<br>~~————————————————EE~~<br>~~Gs~~<br>|93<br>~~————————————————EE~~<br>~~es~~<br>~~Gs~~<br>|–––<br>~~————————————————EE~~<br>|–––<br>~~————————————————EE~~<br>~~ce~~<br>|S<br>~~————————————————EE~~<br>~~ce~~|VDS= 15V,ID= 18A<br>~~————————————————EE~~|
|Qg<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~Gs~~<br>~~ee~~<br>|–––<br>~~Gs~~<br>~~ee~~<br>|42<br>~~ee~~<br>|63<br>~~ee~~<br>|nC|See Fig. 6 and 16<br>ID= 18A<br>VGS= 4.5V<br>VDS= 20V|
|Qgs1<br>~~es~~<br>~~es~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>~~Gs~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~Gs~~<br>~~ee~~<br>~~ee~~<br>|11.5<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>|||
|Qgs2<br><br>~~es~~<br>~~es~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|3.3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|||
|Qgd<br><br>~~es~~<br>~~es~~<br>~~es~~|Gate-to-Drain Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|12.6<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|||
|Qgodr<br><br>~~es~~<br>~~es~~<br>~~es~~|Gate Charge Overdrive<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|14.6<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|||
|Qsw<br><br>~~es~~<br>~~es~~|Switch Charge(Qgs2+ Qgd)<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~<br>~~**ee**~~|15.9<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~<br>~~**ee**~~|||
|Qoss<br><br>~~es~~<br>~~a~~<br>~~es~~|Output Charge<br>~~**ee**~~<br>~~Gs~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~Gs~~|22<br>~~**ee**~~|–––<br>~~**ee**~~|nC|VDS= 16V,VGS= 0V<br>®|
|td(on)<br>~~es~~<br>~~es~~|Turn-On DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|18<br>~~ee~~|–––<br>~~ee~~|ns|ID= 18A<br>Clamped Inductive Load<br>VDD= 16V, VGS= 4.5V<br>®|
|tr<br>~~es~~<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|47<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|27<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.9<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|5950<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|990<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Crss<br>~~es~~<br>~~a ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|460<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||



Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 18A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Surface mounted on 1 in. square Cu board. 

Used double sided cooling, mounting pad. 

Mounted on minimum footprint full size board with metalized back and with small clip heatsink. 

TC measured with thermal couple mounted to top (Drain) of  part. Rθ is measured at Ty of approximately 90°C. 

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1000<br>VGS<br>TOP           10V<br>7.0V<br>4.5V<br>Ta 4.0V<br>3.5V<br>3.2V<br>100 2.9V<br>BOTTOM 2.7V<br>2.7V<br>10<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>ll a ern<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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1000.0<br>Eeeeeee=<br>100.0<br>He<br>TJ = 150°C<br>10.0<br>4)<br>TJ = 25°C<br>1.0<br>ff<br>VDS = 15V<br>≤ 60µs PULSE WIDTH<br>fpr<br>0.1 Alf<br>1.5 2.0 2.5 3.0 3.5<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>Coss  = Cds + Cgd<br>10000<br>Ciss<br>et<br>i eeereemerer<br>a ee ee eee<br>Coss<br>1000<br>Crss<br>PE ET<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           10V<br>7.0V<br>4.5V<br>TT 4.0V<br>3.5V<br>3.2V<br>2.9V<br>BOTTOM 2.7V<br>100<br>2.7V<br>≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>10<br>illawa<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 23A<br>VGS = 10V<br>1.5 THAT<br>ty] LLAA<br>1.0<br>He<br>aT ELLE<br>Ceeeeeeeeee<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>  Normalized On-Resistance vs. Temperature<br>12<br>ID= 18A VDS= 32V<br>10 VDS= 20V<br>8<br>OG<br>6 4,<br>4<br>2<br>0 fii | ft<br>0 20 40 60 80 100<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000.0 —<br>EERE<br>100.0<br>a TJ = 150°C<br>f f<br>10.0<br>A<br>es 9 Ae ae ee<br>1.0 a TJ = 25°C<br>a<br>VGS = 0V<br>i =<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage<br>150<br>SNTNE<br>120  [<br>90<br>HPS<br>TTL ELEN.<br>60<br>30 TLE LLIN<br>PCE<br>0<br>25 50 75 100 125 150<br>TJ , Junction Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

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**----- Start of picture text -----**<br>
1000<br>SSSeeette OPERATION IN THIS AREA  st<br>LIMITED BY R DS(on)<br>100 Sfa<br>ce<br>10 ne<br>CE<br>e e 100µsec<br>1 Sati ma rti Sati maiiil<br>eee e e ee ee eee<br>S Se S<br>arn c ern meni<br>0.1<br>Tc = 25°C<br>Tj = 150°C 1msec<br>ee Single Pulse St e e ame 10msec<br>0.01<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.5<br>2.0<br>1.5 I D  = 250µA<br>1.0<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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100<br>D = 0.50<br>10 o e 0.20 ( eei<br>0.10<br>0.05<br>1 0.02<br>0.01<br>—o + mom TO OO | ||| |||<br>0.010.1 I e) τJ τJτ1τ1 R1 R = 1 τ2τR22 R2 Rτ33 R τ3 3 τR4τ4R4 4 ττ Ri (°C/W)   0.6784       0.0008617.299       0.5775617.566       8.94 τi (sec)<br>Ci= τi/Ri 9.4701      106<br>FATT SINGLE PULSE EEE Ci i/Ri ee ee |||<br>0.001 ( THERMAL RESPONSE ) Notes:<br>Faille on EEN Ec<br>F A See ee EE 1. Duty Factor D = t1/t2 EH<br>| | | 0 tH<br>2. Peak Tj = P dm x Zthja + Tc<br>0.0001 a ee ieee Hl<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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7.0<br>ID = 23A<br>6.0<br>5.0<br>KT<br>4.0 T J  = 125°C<br>A<br>3.0<br>TJ = 25°C<br>2.0 AEA<br>2.0 4.0 6.0 8.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Gate Voltage 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>i tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>IAS<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Waveforms 

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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 15.** Gate Charge Test Circuit 

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1000<br>                 I D<br>TOP          6.7A<br>800                 8.1A<br>BOTTOM   18A<br>600<br>Ft<br>400<br>CE<br>200 RNR<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13c.** Maximum Avalanche Energy Vs. Drain Current 

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LD<br>VDS<br>To<br>+<br>VDD -<br>D.U.T<br>VGS<br>@<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 14a.   Switching Time Test Circuit<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14a.** Switching Time Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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Driver Gate Drive<br>P.W.<br>Period D =<br>+ P.W. Period<br>D.U.T $$ , _ —. |<br>) [®@]    •  Circuit Layout Considerations ft V | GS=10V<br> •<br>| ——| -  •   LowGround Stray Pla I n eductance<br>CurrentLow LeakageTransformerInductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>o - B L - ® + Current r Current di/dt JAN<br>i ©) D.U.T. VDS Waveform Diode Recovery =<br>© dv/dt VDD<br>•   Re-Applied<br>•   + Voltage Body Diode  Forward Drop<br>Re ( 4) •   di/dt controlled by Rg Vop - I L<br>•   D.U.T. - Device Under Test Ce<br>Isp controlled by Duty Factor "D" ® t Ripple  ≤ 5% ISD<br>Driver same type as D.U.T.<br>**----- End of picture text -----**<br>


**Fig 17.** Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs 

## DirectFET ™ Substrate and PCB Layout, MT Outline (Medium Size Can, T-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

**==> picture [140 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>S<br>G !<br>a 7 J VALLI, a<br>YZ) VS NZ, S Y<br>D D<br>**----- End of picture text -----**<br>


www.irf.com 

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## DirectFET ™ Outline Dimension, MT Outline (Medium Size Can, T-Designation). 

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and  substrate designs. 

Po DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN MAX eeee A 6.25 6.35 0.246 0.250 ee[ee] ee a B ee 4.80 5.05 0.189 0.199 a C ee 3.85 3.95 0.152 0.156 D 0.35 0.45 0.014 0.018 eeee E 0.78 0.82 0.031 0.032 eeee F 0.88 0.92 0.035 0.036 eeee a G ee 1.78 1.82 0.070 0.072 a H ee 0.98 1.02 0.039 0.040 J 0.63 0.67 0.025 0.026 eeee K 0.88 1.01 0.035 0.039 eeee a L ee 2.46 2.63 0.097 0.104 a M ee 0.616 0.676 0.0235 0.0274 R 0.020 0.080 0.0008 0.0031 eeee P 0.08 0.17 0.003 0.007 eeee 

## DirectFET ™ Part Marking 

www.irf.com 

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## DirectFET TM Tape & Reel Dimension (Showing component orientation). 

NOTE: Controlling dimensions in mm 

Std reel quantity is 4800 parts. (ordered as IRF6613TRPBF). For 1000 parts on 7" reel, order   IRF6613TR1PBF 

eee **REEL DIMENSIONS** ( STANDARD OPTION **(QTY 4800)** TR1 OPTION **(QTY 1000)** METRIC IMPERIAL METRIC IMPERIAL a CODE MIN MAX MIN MAX MIN MAX MIN MAX A 330.0 N.C 12.992 N.C 177.77 N.C 6.9 N.C B 20.2 N.C 0.795 N.C 19.06 N.C 0.75 N.C en C 12.8 13.2 0.504 0.520 13.5 12.8 0.53 0.50 D 1.5 N.C 0.059 N.C 1.5 N.C 0.059 N.C E 100.0 N.C 3.937 N.C 58.72 N.C 2.31 N.C F N.C 18.4 N.C 0.724 N.C 13.50 N.C 0.53 G 12.4 14.4 0.488 0.567 11.9 12.01 0.47 N.C ———— H 11.9 15.4 0.469 0.606 11.9 12.01 0.47 N.C 

LOADED TAPE FEED DIRECTION 

**==> picture [96 x 74] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE  MIN  MAX  MIN  MAX<br> A  7.90  8.10 0.311 0.319<br> B  3.90  4.10 0.154 0.161<br> C 11.90 12.30 0.469 0.484<br> D  5.45  5.55 0.215 0.219<br> E  5.10  5.30 0.201 0.209<br> F  6.50  6.70 0.256 0.264<br> G  1.50  N.C 0.059  N.C<br>———  H  1.50  1.60 0.059 0.063<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 7/06 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF6613TRPBF/power-mosfet-n-channel-40-v-150-a-3400-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf6613trpbf/mosfet-n-ch-40v-150a-directfet/dp/2579976)
---

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