# Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-263AB, Surface Mount
**URL**: https://novapart.co/products/IRF640NSTRLPBF/power-mosfet-n-channel-200-v-18-a-015-ohm-to-263ab
**SKU**: IRF640NSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7470
**Stock**: 1000+
**Lead Time**: 190 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2467995/)
## PD - 95046A
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements
Lead-Free
## **Description**
Fifth Generation HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
## IRF640NPbF IRF640NSPbF IRF640NLPbF
## HEXFET[®] Power MOSFET
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D
VDSS = 200V
R = 0.15 Ω
DS(on)
G
ID = 18A
S
**----- End of picture text -----**
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
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TO-220AB D [2] Pak TO-262
IRF640NPbF IRF640NSPbF IRF640NLPbF
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## **Absolute Maximum Ratings**
a **Parameter Max. Units** ~~>~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A ~~a~~ IDM Pulsed Drain Current 72 ~~a~~ PD @TC = 25°C ~~a~~ Power Dissipation 150 W ~~a~~ Linear Derating Factor 1.0 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ EAS Single Pulse Avalanche Energy 247 mJ ~~a~~ IAR Avalanche Current ~~©~~ 18 A ~~©~~ EAR Repetitive Avalanche Energy 15 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 8.1 V/ns TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~a~~ Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) www.irf.com 1 07/23/10
## IRF640N/S/LPbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|ee|Parameter|es|Min.|ee|Typ.|Max.|ee|Units|Conditions|
|V(BR)DSS|es|Drain-to-Source Breakdown Voltage|200|es ee|–––|–––|ee|V|VGS = 0V, ID = 250µA|
|∆|V(BR)DSS/|∆|TJ|ee|Breakdown Voltage Temp. Coefficient|–––|0.25|–––|V/°C|Reference to 25°C, ID = 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|–––|0.15|Ω|VGS = 10V, ID = 11A|
|es|eees|eses|es|®|
|VGS(th)|ee|Gate Threshold Voltage|2.0|–––|4.0|V|VDS = VGS, ID = 250µA|
|gfs|Forward Transconductance|6.8|–––|–––|S|VDS = 50V, ID = 11A|
|es|e|se|e|sd|ee|®|
|IDSS|ES|Drain-to-Source Leakage Current|––––––|––––––|25025|µA|VVDSDS = 200V, V = 160V, VGSGS = 0V = 0V, TJ = 150°C|
|Gate-to-Source Forward Leakage|–––|–––|100|VGS = 20V|
|IGSS|PREes|Gate-to-Source Reverse Leakage|–––|–––|||-100|nA|VGS = -20V|
|Qg|ee|Total Gate Charge|–––|–––|67|ID = 11A|
|ee|Qgs|ee|Gate-to-Source Charge|ee|–––|–––|11|nC|VDS = 160V|
|Qgd|Gate-to-Drain ("Miller") Charge|–––|–––|33|VGS = 10V, See Fig. 6 and 13|
|a|td(on)|es|Turn-On Delay Time|–––|10|–––|VDD = 100V|
|tr|Rise Time|–––|19|–––|ID = 11A|
|ee|ee|ns|
|es|td(off)|ee|Turn-Off Delay Time|–––|23|–––|RG = 2.5|Ω|
|tf|Fall Time|–––|5.5|–––|RD = 9.0|Ω|, See Fig. 10|
|ee|@|
|LD|Internal Drain Inductance|–––|–––|Between lead,6mm (0.25in.)|D|
|LS|dts|Internal Source Inductance|–––|–––|nH|from packageand center of die contact|G|fe|S|
|Ciss|es|Input Capacitance|–––|1160|–––|VGS = 0V|
|ee|Coss|ee|Output Capacitance|ee|–––|185|–––|VDS = 25V|
|Crss|Reverse Transfer Capacitance|–––|53|–––|pF|ƒ = 1.0MHz, See Fig. 5|
|ee|ee|
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## **Source-Drain Ratings and Characteristics**
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||||||||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|18|MOSFET symbol|D|
|ee|(Body Diode)|ee|showing the|=o|
|ISM|Pulsed Source Current|–––|–––|72|integral reverse|G|
|eee|(Body Diode)|p-n junction diode.|S|
|ee|SSS|ee|(a|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ = 25°C, IS = 11A, VGS = 0V|
|a|trr|Reverse Recovery Time|–––|167|251|ns|TJ = 25°C, IF = 11A|°|
|Qrr|Se|Reverse Recovery Charge|–––|929|1394|nC|di/dt = 100A/µs|
|So|ton|eG|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by L|:|S+LD)|
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## **Thermal Resistance**
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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Parameter|Typ.|Max.|Units|
|aees|
|R|θ|JC|Junction-to-Case|–––|1.0|
|a|R|θ|CS|a©|Case-to-Sink, Flat, Greased Surface|es|0.50|–––|°C/W|
|R|θ|JA|Junction-to-Ambient|–––|62|
|ee|
|es|R|θ|JA|©|Junction-to-Ambient (PCB mount)|–––|40|
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www.irf.com
2
IRF640N/S/LPbF
**==> picture [201 x 192] intentionally omitted <==**
**----- Start of picture text -----**
100
VGS
TOP 15V
10V8.0V Ht et HH
7.0V
6.0V it oe -5.5V
10 5.0V Lat
BOTTOM 4.5V
4
1 7 Ly
4.5V
0.1
Se
Pr 20µs PULSE WIDTHT = 25J °C
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)DS
D
I , Drain-to-Source Current (A)
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**==> picture [202 x 192] intentionally omitted <==**
**----- Start of picture text -----**
100 == SS SS SS SS
————
T = 175 CJ °
Gen Bap erate
10 an? 4neeeeen
ASR eee
Mf
| f fF | {[ [ [| [| f[ [| [ TF f
T = 25 CJ °
Ve Pe
1
=== === === =
ce ee ere ee
ee
V = 50VDS
PPPTy 20µs PULSE WIDTH
0.1 PEt
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)GS
D
I , Drain-to-Source Current (A)
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**----- Start of picture text -----**
100
VGS
TOP 15V
10V8.0V Co rT
7.0V
6.0V5.5V HE
5.0V a
BOTTOM 4.5V
itt mn
10
4.5V
ER =a eee ee
S e ati
1
PtHH
LU 20µs PULSE WIDTHT = 175J °C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)DS
D
I , Drain-to-Source Current (A)
**----- End of picture text -----**
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**----- Start of picture text -----**
3.5
ID = 18A
eeee
3.0 PT Tee ey ey
F EE
2.5
Pee
aa
pt ttt tt TT TA
2.0
CEEEECE EEE
4
1.5
cooZn
1.0 ft | | Pert tT Tt
| { Per tt tt ttt
0.5 Pir t tt ye tt TT
0.0 P ETEEEet fy LE VGS TT = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction TemperatureJ ( C)°
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
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www.irf.com
3
## IRF640N/S/LPbF
**==> picture [441 x 471] intentionally omitted <==**
**----- Start of picture text -----**
2500 20
VGS = 0V, f = 1 MHZ ID = 11A VDS= 160V
Ciss = Cgs + Cgd, Cds SHORTED VDS= 100V
2000 aiil| Crss = Cgd 16 + VDS= 40V A
C = C + C
oss ds gd
St 2 ny /,
IN ae
1500 PONTE ETI ETI 12 Pi tT t T y
Ciss
Nt eR LETHE EA pt | | Yt
1000 8
PN UI rrre | P| | gm
Coss
NP Lee || |All ft
500 BANG || 4 ames ee ee ee
Crss
PE NEL LT yi f ft ty yy
0 PU INGERe ELI 0 Picttt tt?
0 20 40 60 80
1 10 100 1000
Q , Total Gate Charge (nC)G
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 175 CJ ° 100
10 S A a a ee 10us |
100us
oe T = 25 CJ ° 10 Cn tS STS oT
1ms
1
A 10ms
1
BEPEEof ESSERE, 0 Pe T TCJ = 25 C= 175 C° ° as e rat
0.1 PTA LUA2ee sETT ee V = 0 V GS 0.1 | Single Pulse E 0 RE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 1000
V ,Source-to-Drain Voltage (V)SD V , Drain-to-Source Voltage (V)DS
GS
V , Gate-to-Source Voltage (V)
I , Drain Current (A) D
I , Reverse Drain Current (A)SD
C, Capacitance(pF)
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www.irf.com
4
## IRF640N/S/LPbF
**==> picture [439 x 464] intentionally omitted <==**
**----- Start of picture text -----**
20
20
Pi tT tt Ey ty Ves Vps 6.
16
16 PNA EE EE EE ee | “
PLT AA EEE °°
12 PLT TT AE EET } 10v
12 ≤ 1
≤ 0.1 %
Pt Ett PPE NIT rue
8
8 ptt i ttt PA Fig 10a. Switching Time Test Circuit
VDS
ECE
4
90%
4
SERRE M [_\
Re Eee Y |
0
0 25 50 75 100 125 150 175
25 PEE 50 T , Case TemperatureC 75 100 125 °( C)150° 175 10% /\ |
T , Case TemperatureC ( C) VGS |
td(on) tr td(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
a a eeee ee eee
0
1
D = 0.50
a en 88 ee ee eee
0.20
0.10 PDM
C et
0.1
0.05 Aw LCT iil t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
manne 0 ee 1. Duty factor D = t / t1 2
a ll 2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)1
I , Drain Current (A)D
I , Drain Current (A)D
thJC
(Z )
Thermal Response
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www.irf.com
5
## IRF640N/S/LPbF
**==> picture [192 x 439] intentionally omitted <==**
**----- Start of picture text -----**
15V
VDS L DRIVER
RG D.U.T +
- [V][DD]
IAS
y 20V JL
tp 0.01 Ω
12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
/
|
/ \
IAS cin
12b. Unclamped Inductive Waveforms
QG
——— _
A QGS QGD
VG ee
Charge
**----- End of picture text -----**
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**----- Start of picture text -----**
600
ID
Pt
500 VERE TOP 4.4A 7.6A
NER BOTTOM 11A
400 PAE TT ty
PIN TE [Tt]
300 KEIN| tT
BNENES EEE
200 NeNENE EEE
PAN NU EE
100 PUPit|ARANLL
PASS
0
25 50 75 100 125 150 175
Starting T , Junction TemperatureJ ( C)°
t e, ex
Fig 12c. MaximumVs. Drain AvalancheCurrent Energy
dT ES A
AS
E , Single Pulse Avalanche Energy (mJ)
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**==> picture [159 x 160] intentionally omitted <==**
**----- Start of picture text -----**
Current Regulator
Same Type as D.U.T.
50K Ω
12V .2 µ F
.3 µ F
LE jt
es D.U.T. +-VDS
VGS
(a
3mA
IG ID
Current Sampling Resistors
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www.irf.com
6
## IRF640N/S/LPbF
**==> picture [276 x 436] intentionally omitted <==**
**----- Start of picture text -----**
D.U.T + Circuit Layout Considerations
™ • Low Stray Inductance
@ • Ground Plane
• Low Leakage Inductance
| - Current Transformer
+
- - +
(0
®
Rg • dv/dt controlled by Rg +
• Driver same type as D.U.T. -
•
• D.U.T. - Device Under Test
(1) Isp controlled by Duty Factor "D"
® Driver Gate Drive
P.W.
Period D =
P.W. | Period _t
VGS=10V
t
@ D.U.T. ISD Waveform
Reverse
Recovery Body Diode Forward
Current "| Current di/dt a
©) D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
ma
Re-Applied
Voltage Body Diode a Forward Drop
® Inductor Curent
S$
Ripple ≤ 5% ISD
**----- End of picture text -----**
## For N-Channel HEXFET Power MOSFETs
www.irf.com
7
## IRF640N/S/LPbF
**==> picture [317 x 69] intentionally omitted <==**
**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789 INTERNATIONAL PART NUMBER
ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010
IN THE ASSEMBLY LINE "C" LOGO IeaR 019
7 89 DATE CODE
YEAR 0 = 2000
Note: "P" in assembly line position ASSEMBLY
indicates "Lead - Free" LOT CODE WEEK 19
LINE C
**----- End of picture text -----**
TO-220AB package is not recommended for Surface Mount Application
## **Notes:**
**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/**
**2. For the most current drawing please refer to IR website at http://www.irf.com/package/**
www.irf.com
8
## IRF640N/S/LPbF
**==> picture [202 x 128] intentionally omitted <==**
**----- Start of picture text -----**
THIS IS AN IRF530S WITHLOT CODE 8024 INTERNATIONAL | PART NUMBER
ASSEMBLED ON WW 02, 2000 RECTIFIER F530S
IN THE ASSEMBLY LINE "L" LOGO TOR 002.
80 24 DATE CODE
ASSEMBLY YEAR 0 = 2000
assembly"Lead line- Free”position LOT CODE HTuu eeny U LU , WEEK 02LINE L
OR
PART NUMBER
INTERNATIONAL a
RECTIFIER F530S
ASSEMBLYLOT CODELOGO TOR80WTan,q UP0024)U24 DATE CODEYEAR 0 = 2000WEEK 02P = DESIGNATES LEAD - FREEPRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
**----- End of picture text -----**
**Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com
9
## IRF640N/S/LPbF
## TO-262 Package Outline Dimensions are shown in millimeters (inches)
## TO-262 Part Marking Information
**==> picture [223 x 132] intentionally omitted <==**
**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
Note: "P" in assembly lineASS EMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO TeaR cS 17IRL3103L.719¢89 DATE CODE
position indicates "Lead-Free" ASSEMBLY YEAR 7 = 1997
LOT CODE WEEK 19
LINE C
OR
PART NUMBER
INTERNATIONAL cS
RECTIFIER IRL3103L
LOGO TARP17 719A89 DATE CODEP = DESIGNATES LEAD-FREE
ASSEMBLY PRODUCT (OPTIONAL)
LOT CODE YEAR 7 = 1997
WEEK 19
A = ASSEMBLY S ITE CODE
**----- End of picture text -----**
## **Notes:**
**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/**
www.irf.com
10
## IRF640N/S/LPbF
## D[2] Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
**==> picture [226 x 241] intentionally omitted <==**
**----- Start of picture text -----**
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION 1.85 (.073) 11.60 (.457)
1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
ek 16.10 (.634) 4.52 (.178)
15.90 (.626)
FEED DIRECTION
13.50 (.532) 27.40 (1.079)
12.80 (.504) 23.90 (.941) 1,
O 4
330.00 60.00 (2.362)
(14.173) MIN.
MAX.
| F
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB. 26.40 (1.039)24.40 (.961) 4
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3
**----- End of picture text -----**
Notes: © Repetitive rating; pulse width limited by ® Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature.
This is only applied to TO-220AB package 2 Starting TJ = 25°C, L = 4.2mH[®] RG = 25 Ω , IAS = 11A.
© This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. © ISD ≤ 11A ¢ di/d ≤ 344A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Data and specifications subject to change without notice. International
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010
www.irf.com
11
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
## Links
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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf640nstrlpbf/mosfet-n-ch-200v-18a-to-263ab/dp/2467995)
---
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