# Power MOSFET, P Channel, 150 V, 27 A, 0.12 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2467994/)

**URL**: https://novapart.co/products/IRF6218STRLPBF/power-mosfet-p-channel-150-v-27-a-012-ohm-to-263
**SKU**: IRF6218STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 250W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.12ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 27A |
| Drain Source On State Resistance | 0.12ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2467994/)

**SMPS MOSFET** 

IRF6218SPbF 

HEXFET[® ] Power MOSFET 

## **Applications** 

- Reset Switch for Active Clamp Reset DC-DC converters 

## **Benefits** 

- Low Gate to Drain Charge to Reduce Switching Losses 

- Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) 

- Fully Characterized Avalanche Voltage and Current 

- Lead-Free 

**==> picture [243 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDSS  RDS(on) (max)    ID<br>- 150V  150m  @  VGS = -10V -27A<br>———<br>D<br>S<br>G<br>D2 Pak<br>IRF6218SPbF<br>G  D  S<br>Gate  Drain  Source<br>——<br>**----- End of picture text -----**<br>


**Standard Pack Base part number Package Type Orderable Part Number Form Quantity** Tube 50 IRF6218SPbF IRF6218SPbF D2-Pak ~~a~~ Tape and Reel Left 800 IRF6218STRLPbF **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|-150|V|
|VGS|Gate-to-Source Voltage|± 20||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V|- 27|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V|-19||
|IDM|Pulsed Drain Current|- 110||
|PD@TC= 25°C|Maximum Power Dissipation|250|W|
||Linear Derating Factor|1.6|W/°C|
|dv/dt|Peak Diode Recoverydv/dt|8.2|V/ns|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||SolderingTemperature,for 10 seconds(1.6mm from case)|300||



**Thermal Resistance** 

**Symbol Parameter Typ. Max. Units** RJC Junction-to-Case  ––– 0.61 °C/W ~~——rr~~ RJA Junction-to-Ambient ( PCB Mount, steady state)  ––– 40 Notes  through  are on page 2 1 2016-5-26 ~~eo~~ 

~~Cinfineon~~ 

IRF6218SPbF ~~LLL~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-SourceBreakdown Voltage<br>-150<br>–––<br>–––<br>V<br>VGS=0V,ID= -250µA<br>V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>-0.17 –––<br>V/°C Reference to 25°C,ID= -1mA<br>~~ee~~<br>~~Ge eC~~<br>~~—————————~~|
|---|
|RDS(on) <br>Static Drain-to-Source On-Resistance    –––<br>120<br>150<br>mVGS= -10V,ID= -16A<br>VGS(th)<br>Gate Threshold Voltage<br>-3.0<br>–––<br>- 5.0<br>V<br>VDS= VGS,ID= -250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>-25<br>µAVDS = -120V, VGS =0V<br>–––<br>–––<br>-250<br>VDS = -120V,VGS =0V,TJ =150°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>-100<br>nAVGS = -20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>100<br>VGS =20V<br>~~——————————————~~<br>~~a~~<br>~~——~~<br>~~——————————_——~~|
|**Dynamic@ TJ = 25°C (unless otherwise specified)**|
|gfs<br>Forward Trans conductance<br>11<br>–––<br>–––<br>S<br>VDS= -50V, ID= -16A|
|Qg<br>Total Gate Charge<br>–––<br>71<br>110<br>ID= -16A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>21<br>–––<br>nC VDS= -120V<br>Qgd<br>Gate-to-Drain(‘Miller’)Charge<br>–––<br>32<br>–––<br>VGS= -10V<br>td(on)<br>Turn-On DelayTime<br>–––<br>21<br>–––<br>ns<br>VDD= -75V<br>tr<br>Rise Time<br>–––<br>70<br>–––<br>ID= -16A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>35<br>–––<br>RG= 3.9<br>tf<br>Fall Time<br>–––<br>30<br>–––<br>VGS= -10V<br>Ciss<br>Input Capacitance<br>–––<br>2210<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>370<br>–––<br>VDS= -25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>89<br>–––<br>ƒ= 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>2220<br>–––<br>VGS= 0V,VDS= -1.0V, ƒ= 1.0MHz<br>~~a~~<br>~~————~~<br>~~ee~~<br>~~OO~~<br>~~SS~~|
|Coss eff.<br>Effective Output Capacitance<br>–––<br>340<br>–––<br>VGS= 0V, VDS= 0V to -120V<br>Coss<br>Output Capacitance<br>–––<br>170<br>–––<br>VGS= 0V,VDS= -120V, ƒ= 1.0MHz<br>~~ee~~|
|**Avalanche Characteristics**|
|**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**|
|EAS<br>Single Pulse Avalanche Energy<br>–––<br>210<br>mJ|
|IAR<br>Avalanche Current<br>–––<br>-16<br>A|
|**Diode Characteristics**|
|**Parameter **<br>**Min.**<br>**Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>-27<br>A<br>MOSFET symbol<br>(Body Diode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>-110<br>integral reverse<br>(Body Diode)<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>-1.6<br>V<br>TJ= 25°C,IS= -16A,VGS= 0V<br>~~eeGG~~<br>~~+) ])~~<br>~~a~~<br>~~ee ee~~<br>:<br>~~pe~~|
|trr<br>Reverse RecoveryTime<br>–––<br>150<br>–––<br>ns  TJ= 25°C ,IF= -16A, VDD= -25V<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>860<br>–––<br>nC   di/dt = 100A/µs<br>~~——~~|
|**Notes:**|



-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  starting  TJ = 25°C, L = 1.6mH, RG = 25, IAS = -17A 

-  ISD -17A, di/dt -520A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 300µs; duty cycle  2%. 

-  R is measured at TJ of approximately 90°C. 

-  When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

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IRF6218SPbF 

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**----- Start of picture text -----**<br>
1000<br>1000<br>VGS<br>VGS TOP           -15V<br>TOP           -15V -10V<br>-10V -8.0V<br>100 -8.0V -7.0V 100 -7.0V -6.0V<br>-6.0V -5.5V<br>-5.5V -5.0V<br>-5.0V BOTTOM -4.5V<br>10 BOTTOM -4.5V<br>10 oe<br>Taam<br>1<br>-4.5V -4.5V<br>1<br>0.1<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH Tj = 175°C<br>Tj = 25°C 0.1<br>0.01<br>0.1 1 10 100<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>-VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>100 2.5<br>I = -27A<br>D<br>V = -10V<br>GS<br>T = 25°C<br>J  T = 175°C 2.0<br>J<br>10 TA) 1.5 pe<br>/ (eA<br>1.0<br>V = 50V<br>DS<br>60µs PULSE WIDTH<br>PPA) AeA<br>1.0 DUEL<br>0.5<br>2 4 6 8 10 12<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>-VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>)<br>-ID, Drain-to-Source Current<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

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IRF6218SPbF ~~Ld~~ 

**==> picture [519 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000 12.0<br>VGS   = 0V,       f = 1 MHZ<br>I = -16A<br>Ciss    = C gs + Cgd,  C ds SHORTED D V = 120V<br>DS<br>C rss    = C gd  10.0 V = 75V<br>C = C + C DS<br>10000 oss   ds  gd V = 30V<br>DS<br>ye<br>8.0<br>I 7<br>C<br>iss<br>1000 6.0<br>Se<br>C<br>oss<br>4.0<br>Tr C pH YELLE<br>100 rss<br>2.0<br>TT ZEEE<br>10 0.0<br>1 10 100 0 10 20 30 40 50 60 70 80<br>-VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00<br>T = 175°C<br>J  100<br>ro<br>10.00<br>ye RS 100µsec<br>10<br>T = 25°C<br>J<br>1.00<br>Tc = 25 ° C 1msec<br>Tj = 175°C<br>V GS  = 0V Single Pulse 10msec<br>0.10 EEEHetrtttEE 1 Nis;<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1000<br>-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>-ID,  Drain-to-Source Current (A)<br>-VGS, Gate-to-Source Voltage (V)<br>-ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**==> picture [240 x 229] intentionally omitted <==**

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30<br>25<br>wt | tt |<br>PPA LL<br>20<br>15<br>10<br>aaa<br>5<br>0<br>pit TTA\<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>-ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

**==> picture [489 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D = 0.50 a<br>we<br>Vea 0.20<br>0.1<br>eee 0.10 y al<br>0.05 R 1 R1 R 2 R2 R 3 R3 Ri (°C/W)  i (sec)<br>J  J  C C 0.264  0.000285<br>0.01 ma 0.02 0.01 alll ee 1 1  —— 2 2 3  3 0.206  0.001867<br>Ci= Ci= iRiiRi 0.140  0.013518<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>suiHl a,<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

5 2016-5-26 ~~—E———~~ 

## ~~Cinfineon~~ 

**==> picture [241 x 230] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>350<br>300<br>V = -10V<br>GS<br>250<br>200<br>150<br>100<br>0 20 40 60 80<br>-ID , Drain Current (A)<br>)<br>RDS (on) , Drain-to-Source On Resistance (m<br>**----- End of picture text -----**<br>


## **Fig 12.** On-Resistance vs. Drain Current 

**Fig 14a&b.** Basic Gate Charge Test Circuit and Waveform 

## IRF6218SPbF 

**==> picture [235 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>900<br>800<br>700<br>600<br>I = -27A<br>D<br>500<br>400<br>i A<br>300<br>200<br>100 Pt | |Abdft<br>0<br>4 5 6 7 8 9 10 11 12<br>-VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


## **Fig 13.** On-Resistance vs. Gate Voltage 

**==> picture [239 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
900<br>ID<br>800<br>TOP         -4.6A<br>PT EL TT<br>700 NEGaae -6.3A<br>BOTTOM -16A<br>Kee<br>600<br>500<br>\<br>400 PIN EE EE<br>300 KUKGRE IN N  EEE<br>NAL EEE<br>200<br>100 SPSS<br>0 PE TT [Se]<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15c.** Maximum Avalanche Energy vs. Drain Current 

**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

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## ~~Cinfineon~~ 

## **D2-Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D2-Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TeaR —~<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE H y Hf WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

2016-5-26 

7 

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IRF6218SPbF ~~LLL~~ 

**D2-Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [386 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [376 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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IRF6218SPbF 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D2-Pak|MSL1<br>(per JEDEC J-STD-020D)††|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at Infineon’s web site www.infneon.com 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Updated datasheet based on IR corporate template.|
|3/25/2015||Updated package outline and part marking on page 7.|
|||Removed TO-262 Pak(IRF6218LPbF)from datasheet-allpages|
|5/26/2016||Updated datasheet with corporate template.|
|||Added disclaimer on lastpage.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™, 

SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

|**Published by**<br>**Infineon Technologies AG**<br>Edition 2016-04-19|**IMPORTANT NOTICE**<br>;<br>;<br>;<br>oo<br>,<br>The information given in thisdocument shall in no<br>event be regarded as a guarantee of conditions or<br>characteristics (“Beschaffenheitsgarantie”) .|contact your nearest Infineon Technologies office<br>(www.infineon.com).<br>For further information on the product, technology,<br>delivery terms and conditions and prices please|
|---|---|---|
|**81726 Munich, Germany**|||
|**© 2016 Infineon Technologies AG.**<br>**All Rights Reserved.**|With respect to any examples, hints or any typical<br>Technologies<br>hereby<br>disclaims<br>any<br>and<br>all<br>values<br>stated<br>herein<br>and/or<br>any<br>information<br>regarding the application of the product, Infineon|Please note that this product is not qualified<br>according to the AEC Q100 or AEC Q101 documents<br>.<br>;<br>;<br>ofthe Automotive Electronics Council.|
||warranties<br>and<br>liabilities<br>of any<br>kind,<br>including||
|Doyou have a question about this|without limitation warranties of non-infringement|**WARNINGS**|
|**document?**|of intellectual property rights of any third party.|Due to technical requirements products may|
|**Email:**erratum@infineon.com||contain dangerous substances. For information on|
||**is subject to customer’s compliance with its**<br>In addition, any information given in this document|Infineon Technologies office.<br>__the types in question please contact your nearest|
||obligations<br>stated<br>in<br>this<br>document<br>and<br>any||
|**Document reference**<br>**ifx1**|applicable<br>legal<br>requirements,<br>norms<br>and<br>standards concerning customer’s products and any<br>use of the product of Infineon Technologies in<br>customer’s applications.|Except as otherwise explicitly approved by Infineon<br>**Infineon Technologies’ products may**not be used in<br>Technologies<br>in<br>a<br>written<br>document<br>signed<br>by<br>authorized representatives of Infineon Technologies,<br>any applications where a failure of the product or|
|||any consequences of the use thereof can reasonably|
||The data contained in this document is exclusively|be expected to result in personal injury.|
||intended for technically trained staff. It is the||
||**responsibility of customer’s technical departments**||
||to evaluate the suitability of the product for the||



9 

2016-5-26 



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