# Power MOSFET, P Channel, 150 V, 27 A, 0.15 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1704022/)

**URL**: https://novapart.co/products/IRF6218PBF/power-mosfet-p-channel-150-v-27-a-015-ohm-to-220ab
**SKU**: IRF6218PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3100
**Stock**: 10+

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-27A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power Dissipati

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 27A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1704022/)

## **SMPS MOSFET** 

## IRF6218PbF 

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HEXFET Power MOSFET<br>**----- End of picture text -----**<br>


## **Applications** 

Reset Switch for Active Clamp Reset DC-DC converters Lead-Free 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**-150V**|**150m @VGS = -10V**|**-27A**|



## **Benefits** 

Low Gate to Drain Charge to Reduce Switching Losses 

> | Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) 

**==> picture [174 x 83] intentionally omitted <==**

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D<br>G<br>S TO-220AB<br>**----- End of picture text -----**<br>


Fully Characterized Avalanche Voltage and Current 

## **Absolute Maximum Ratings** 

|~~[oT~~<br>~~SS~~|**Parameter**<br>~~[oT ET~~<br>~~SS~~|**Max.**<br>~~ET~~<br>|**Units**<br>~~ET~~<br>|
|---|---|---|---|
|VDS<br>~~[oT~~<br>~~SS~~|Drain-to-Source Voltage<br>~~[oT ET~~<br>~~SS~~|-150<br>~~ET~~<br>|V<br>~~ET~~<br>~~ET~~<br>~~ae~~|
|VGS<br>~~[oT~~<br>~~SS[oT~~|Gate-to-Source Voltage<br>~~[oT ET~~<br>~~SS[oT ET~~<br>~~ae~~|± 20<br>~~ET~~<br>~~ET~~<br>~~ae~~||
|ID@ TC= 25°C<br>~~SS[oT~~|Continuous Drain Current, VGS@ 10V<br>~~SS[oT ET~~<br>~~ae~~|-27<br>~~ET~~<br>~~ae~~|A<br>~~ET~~<br>~~CO~~<br>~~ae~~|
|ID@ TC= 100°C<br>~~[oT~~|Continuous Drain Current,VGS @10V<br>~~[oT ET~~<br>~~CO~~<br>~~ae~~|-19<br>~~ET~~<br>~~CO~~<br>~~ae~~||
|IDM|Pulsed Drain Current<br>~~ae~~|-110<br>~~ae~~<br>~~O~~||
|PD@TC= 25°C|Maximum Power Dissipation<br>~~ae~~<br>~~a~~|250<br>~~ae~~<br>~~a~~<br>~~O~~<br>~~|].~~|W<br>~~ae~~<br>~~a~~<br>~~—&~~|
||Linear Derating Factor<br>~~a~~<br>~~O__|_-"9W""I1._~~|1.6<br>~~a~~<br>~~O~~<br>~~O__|_-"9W""I1._~~<br>~~|].~~|W/°C<br>~~a~~<br>~~O__|_-"9W""I1._~~<br>~~—&~~|
|dv/dt|Peak Diode Recovery dv/dt<br>~~O__|_-"9W""I1._~~<br>~~OS~~<br>~~rr~~|8.2<br>~~O__|_-"9W""I1._~~<br>~~|]. ~~<br>~~OS~~|V/ns<br>~~O__|_-"9W""I1._~~<br> ~~—&~~<br>~~OS~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~OS~~<br>~~rr~~|-55  to + 175<br>~~OS~~|°C<br>~~OS~~<br>~~ET~~|
||SolderingTemperature,for 10 seconds<br>~~rr~~|300 (1.6mm from case )<br>~~E~~||
||Mountingtorque,6-32 or M3 screw<br>~~rr~~<br>~~—~O0NNANTAI~~|10 lbf•in (1.1N•m)<br>~~—~O0NNANTAI~~~~**T**V-rT—r~~<br>~~E~~|~~V-rT—r~~<br>~~ET~~|



Notes 0) hrough ) are on page 7 www.irf.com 

1 

06/28/04 

## IRF6218PbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|---|---|
|V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>RDS(on)<br>VGS(th)<br>IDSS<br>IGSS<br>**Dynamic @ T**|Drain-to-Source Breakdown Voltage<br>-150<br>–––<br>–––<br>V<br>J<br>Breakdown Voltage Temp. Coefficient<br>–––<br>-0.17<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>120<br>150<br>mΩ<br>Gate Threshold Voltage<br>-3.0<br>–––<br>-5.0<br>V<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>-25<br>µA<br>–––<br>–––<br>-250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>-100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>100<br>**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>VGS= 0V, ID= -250µA<br>Reference to 25°C, ID= -1mA<br>VGS= -10V, ID= -16A<br>VDS= VGS, ID= -250µA<br>VDS= -120V, VGS= 0V<br>VDS= -120V, VGS= 0V, TJ= 150°C<br>VGS= -20V<br>VGS= 20V<br>~~Ps~~<br>~~Gs Gd~~<br>~~es~~<br>~~Gn GD~~<br>~~Ps~~<br>~~ns nd~~<br>~~es~~<br>~~Gn GD~~<br>~~Pr~~<br>~~EE~~~~**|**~~<br>~~ee~~<br>~~|TT~~|
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|gfs<br>Qg<br>Qgs<br>Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss<br>Crss<br>Coss<br>Coss<br>Cosseff.|Forward Transconductance<br>11<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>71<br>110<br>Gate-to-Source Charge<br>–––<br>21<br>–––<br>nC<br>Gate-to-Drain("Miller")Charge<br>–––<br>32<br>–––<br>Turn-On DelayTime<br>–––<br>21<br>–––<br>Rise Time<br>–––<br>70<br>–––<br>ns<br>Turn-Off DelayTime<br>–––<br>35<br>–––<br>Fall Time<br>–––<br>30<br>–––<br>Input Capacitance<br>–––<br>2210<br>–––<br>Output Capacitance<br>–––<br>370<br>–––<br>Reverse Transfer Capacitance<br>–––<br>89<br>–––<br>pF<br>Output Capacitance<br>–––<br>2220<br>–––<br>Output Capacitance<br>–––<br>170<br>–––<br>Effective Output Capacitance<br>–––<br>340<br>–––<br>VDS= -50V, ID= -16A<br>ID= -16A<br>VDS= -120V<br>VGS= -10V<br>VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz<br>VGS= 0V,  VDS= -1.0V,ƒ= 1.0MHz<br>VGS= 0V,  VDS= -120V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to -120V<br>VGS= -10V<br>VDD= -75V<br>ID= -16A<br>RG= 3.9Ω<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~**ee** ~~~~**ee**~~<br>~~ee~~<br>~~@~~<br>~~es~~<br>~~ee ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~<br>~~es~~<br>~~@~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee es~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee es~~|
|**Avalanche Characteristics**||
||**Parameter**<br>**Units**<br>**Typ.**<br>**Max.**|
|EAS<br>IAR|Single Pulse Avalanche Energy<br>mJ<br>Avalanche Current<br>A<br>–––<br>–––<br>210<br>-16<br>~~a~~<br>~~a~~<br>~~GD~~|



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|-27|A|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|Pulsed Source Current<br>(Body Diode)|–––<br>~~ee~~|–––<br>~~Gn~~|-110<br>~~es~~|||
|VSD|Diode Forward Voltage<br>~~Ps~~<br>~~**e**e~~|–––<br>~~Ps~~<br>~~ee~~<br>~~e~~|–––<br>~~Ps~~<br>~~Gn~~<br>|-1.6<br>~~Ps~~<br>~~es~~<br>~~eee~~|V<br>~~Ps~~<br>~~eee~~|TJ= 25°C, IS= -16A, VGS= 0V<br>~~Ps~~<br>~~eee~~|
|trr|Reverse RecoveryTime<br>~~**e**e~~<br>~~s~~|–––<br>~~ee ~~<br>~~e~~<br>~~ee~~|150<br> ~~Gn ~~<br>|–––<br> ~~es~~<br>~~eee~~|ns<br>~~eee~~|TJ= 25°C, IF= -16A, VDD= -25V<br>di/dt = -100A/µs<br>~~eee~~<br>~~@~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**e~~<br>~~s~~|–––<br>~~e~~<br>~~ee~~|860<br>|–––<br>~~eee~~|nC<br>~~eee~~||



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## IRF6218PbF 

**==> picture [440 x 201] intentionally omitted <==**

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1000 1000<br>VGS VGS<br>TOP           -15V TOP           -15V<br>-10V -10V<br>100 -8.0V-7.0V el -8.0V-7.0V ee ll<br>-6.0V 100 -6.0V<br>-5.5V-5.0V Me —————— -5.5V-5.0V rree<br>10 BOTTOM -4.5V BOTTOM -4.5V<br>10<br>1<br>2 eal Senet” ceemesriieearitt<br>-4.5V<br>-4.5V<br>o e | 1 ge _-<br>0.1<br>≤60µs PULSE WIDTH ≤60µs PULSE WIDTH<br>0.01 S SHei Tj = 25°C a ll 0.1 Baie P T Tj = 175°C lllI<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100<br>Ee es es et<br>Ee o ee eeeees. eee<br>T = 25°C<br>a J  | T = 175°C |<br>J<br>A are<br>10 | /|Ff | |<br>eeee = eyey Asee eees eses ee<br>FPeeeeTPey eePfee ee ee<br>| |ee ee V = 50V ee| |<br>DS<br>≤60µs PULSE WIDTH<br>1.0 |<br>2 4 6 8 10 12<br>-VGS, Gate-to-Source Voltage (V)<br>)(Α<br>-ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
2.5<br>ID = -27A 1<br>V aa GS = -10V PLT TLLy,<br>2.0 PELL LEAL<br>S eeeeeanecel<br>1.5 P EEEEEEEAE/<br>PTT TTT ALT|<br>Wa<br>1.0 P LLLALLA<br>BALLELEEPpZenaaeeL WA<br>0.5 | ELL LL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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## IRF6218PbF 

**==> picture [433 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000 12.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= -16A VDS= 120V<br>= Crss   = Cgd  10.0 i V = 75V af<br>DS<br>10000 Coss  = Cds + Cgd V = 30V<br>DS<br>= — | | A.<br>8.0<br>Ciss<br>1000 a EE 6.0 rT]<br>C<br>oss<br>4.0<br>a eS ee ee r<br>100 Crss<br>10 aFteetTeeEE elEET 2.00.0 JV) ty} td<br>1 10 100 0 10 20 30 40 50 60 70 80<br>-VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>C, Capacitance(pF)<br>-VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**==> picture [214 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000.00<br>a ee ee ee ee<br>100.00 S aaaaaaean<br>T = 175°C<br>| J  eee<br>P e<br>10.00 P il AA<br>r e<br>S e<br>TJ = 25°C<br>1.00<br>_———— —<br>VGS = 0V<br>0.10 SS ee re<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>-ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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-VSD, Source-to-Drain Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000<br>OPERATION IN THIS AREA<br>Yr | TY LIMITED BY R DS(on) CH]<br>SR cul HHT<br>100 TT<br>ee<br>eee<br>PT as YAN a ET<br>ee<br>100µsec<br>10 P| ee ae<br>Tc = 25°C [| {TIN 4 1msec CT<br>Tj = 175°C<br>Single Pulse 10msec<br>1 | TT EER att iil<br>1 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRF6218PbF 

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**----- Start of picture text -----**<br>
30<br>25 K t Lt | aRp<br>20 P SLETE] ieee | -<br>+<br>15 e t |~ aNNE ET AnRo)+ Ves °<br>≤ 1<br>≤ 0.1 %<br>CCEPKE] Pulse Width ys<br>10<br>Fig 10a.   Switching Time Test Circuit<br>\<br>5 P t | tt NY |<br>VDS<br>90%<br>0 P| fi<br>25 50 75 100 125 150 175<br>| ft | iA y<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. 10% /\_\<br>Ambient Temperature VGS<br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>1<br>D = 0.50<br>eee ee =<br>0.20<br>0.1<br>0.10<br>eee 0.05 AALe τJ τ fn J a R1 n R1 ea R2 R e 2 aa R3R3 τCτ | Ri (°C/W)   0.264       0.000285 |  τi (sec) i<br>0.01 ee 0.020.01 erAir rip τ1Ci= τ fe 1 τi/Ri τ2 τ2 τ3τ3 = 0.206       0.0018670.140       0.013518 |<br>Ci i/Ri<br>ee ee ee ee eee ee AEeee ee ee ee]|ee eT ee eee]<br>SINGLE PULSE Notes:<br>Ear HE ( THERMAL RESPONSE ) E FT 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 AAmaaan LE EET EETSUAEE th<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>-ID,  Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF6218PbF 

**==> picture [433 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
400 1000<br>900<br>P |<br>350 | | |) A AAAA<br>800<br>700<br>300<br>Po VGS = -10V } 600 R EE<br>I = -27A<br>D<br>250 500<br>400<br>200 Pf O RAS<br>300<br>200<br>150<br>P | A) f ry<br>100<br>100 ——— | 0 F EE ERE<br>0 20 40 60 80 4 5 6 7 8 9 10 11 12<br>-ID , Drain Current (A) -VGS, Gate -to -Source Voltage  (V)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>)Ω<br>RDS (on) , Drain-to-Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Drain Current 

**Fig 13.** On-Resistance vs. Gate Voltage 

**==> picture [440 x 234] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF .3µF D.U.T. +-VDS VG QGS QGD 900 ID<br>800<br>VGS TOP         -4.6A<br>ae -3mA / Charge 700 T OOWOOo -6.3A<br>a IG ID | | T OLL ECe BOTTOM -16A<br>Current Sampling ! Resistors A CEC<br>600<br>Fig 14a&b.   Basic Gate Charge Test Circuit<br>CRELLCLEELO<br>and Waveform 500<br>400 C ACC EEL<br>VDS L 300<br>I AS RG D.U.T 1 VDD 200 XC CNCCEECECEESSSNeperre<br>IAS A<br>-20V DRIVER 100<br>tp 0.01Ω<br>\ {_ «4 0 P ESSSS0<br>| 0 C OL SSS<br>25 50 75 100 125 150 175<br>tp<br>V(BR)DSS 15V Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

6 

**Fig 15c.** Maximum Avalanche Energy vs. Drain Current 

www.irf.com 

## IRF6218PbF 

Dimensions are shown in millimeters (inches) 

**==> picture [351 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>_ [A] 4 6.10 (.240) x [-]<br>15.24 (.600)<br>14.84 (.584) _ 1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE LEAD ASSIGNMENTSIGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>mene 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X (IP [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M 1 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) || T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

**==> picture [317 x 74] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: T HIS  IS AN IRF1010<br>LOT CODE 1789<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER<br>IN THE ASSEMBLY LINE "C" RECTIFIER<br>LOGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DAT E CODE<br>YEAR 7 =  1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, IAS = -17A. 

ISD ≤ -17A, di/dt ≤ -520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 300µs; duty cycle ≤ 2%. R 9 is measured at TJ of approximately 90°C. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

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7 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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