# Power MOSFET, P Channel, 150 V, 13 A, 0.29 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1013514/)

**URL**: https://novapart.co/products/IRF6215PBF/power-mosfet-p-channel-150-v-13-a-029-ohm-to-220ab
**SKU**: IRF6215PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6260
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.29ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.29ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013514/)

## PD - 94817 

## IRF6215PbF 

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free 

## **Description** 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = -150V<br>R  = 0.29Ω<br>DS(on)<br>G<br>ID = -13A<br>S<br>**----- End of picture text -----**<br>


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** ~~i~~ a **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -13 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -9.0 A ~~>~~ IDM Pulsed Drain Current ~~a~~ -44 ~~a~~ PD @TC = 25°C Power Dissipation 110 W ~~a~~ Linear Derating Factor 0.71 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ EAS Single Pulse Avalanche Energy 310 mJ ~~a~~ IAR Avalanche Current -6.6 A ~~a~~ EAR Repetitive Avalanche Energy 11 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~apf~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~a~~ Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**||
|---|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.4|||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W||
|RθJA|Junction-to-Ambient|–––|62|||
||||||11/5/03|



## IRF6215PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|~~nD~~||||||
|---|---|---|---|---|---|---|
|~~es~~<br>~~a~~|**Parameter**<br>~~nD~~<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~Gn~~|**Max.**|**Units**|**Conditions**|
|V(BR)DSS<br>~~es~~<br>~~a~~<br>~~rs~~|Drain-to-Source Breakdown Voltage<br>~~nD~~<br>~~es~~<br>~~rr~~|-150<br>~~es~~|–––<br>~~Gn~~|–––|V|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~a~~<br>~~rs~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~rr~~|–––<br>~~es~~|-0.20<br>~~Gn~~|–––|V/°C|Reference to 25°C, ID= 1mA|
|RDS(on)<br>~~rs~~<br>~~Es~~<br>~~ee~~<br>~~een~~|Static Drain-to-Source On-Resistance<br>~~rr~~<br>~~Es~~<br>~~ee~~<br>~~een~~|–––<br>~~Es~~|–––<br>~~Es~~|0.29<br>~~Es~~|Ω<br>~~Es~~<br>~~ee~~|VGS= -10V, ID= -6.6A<br>, TJ= 25°C<br>~~Es~~|
|||–––<br>~~Es~~<br>~~ee~~|–––<br>~~Es~~<br>~~ee~~<br>~~Gs~~|0.58<br>~~Es~~<br>~~ee~~||VGS= -10V, ID= -6.6A<br>, TJ= 150°C<br>~~Es~~<br>~~ee~~|
|VGS(th)<br>~~ee~~<br>~~een~~|Gate Threshold Voltage<br>~~ee~~<br>~~een~~|-2.0<br>~~ee~~|–––<br>~~ee~~<br>~~Gs~~|-4.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= -250µA<br>~~ee~~|
|gfs<br>~~ee~~<br>~~een~~|Forward Transconductance<br>~~ee~~<br>~~een~~|3.6<br>~~ee~~|–––<br>~~ee~~<br>~~Gs~~<br>~~ne~~|–––<br>~~ee~~<br>~~ne~~|S<br>~~ee~~<br>~~ne~~|VDS= -50V, ID= -6.6A<br>~~ee~~<br>~~ne~~|
|IDSS<br>~~een~~<br>~~a~~<br>~~ee~~|Drain-to-Source Leakage Current<br>~~een~~<br>~~J~~<br>~~ees~~<br>|–––|–––<br>~~Gs~~<br>~~ne~~|-25<br>~~ne~~|µA<br>~~ne~~<br>~~PO~~<br>~~ee~~|VDS= -150V, VGS= 0V<br>~~ne~~|
|||–––<br>~~J~~<br>~~ee~~<br>|–––<br>~~Gs~~<br>~~J~~<br>~~ee~~<br>|-250<br>~~J~~<br>~~ee~~<br>||VDS= -120V, VGS= 0V, TJ= 150°C<br>~~PO~~<br>~~ee~~|
|IGSS<br>~~a~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~J~~<br>~~ees~~<br>|–––<br>~~J~~<br>~~ee~~<br>|–––<br>~~J~~<br>~~ee~~<br>|100<br>~~J~~<br>~~ee~~<br>|nA<br>~~PO~~<br>~~ee~~<br>~~i~~|VGS= 20V<br>~~PO~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~J~~<br>~~ees~~<br><br>|–––<br>~~J~~<br>~~ee~~<br><br>|–––<br>~~J~~<br>~~ee~~<br><br>~~i~~|-100<br>~~J~~<br>~~ee~~<br><br>~~i~~||VGS= -20V<br>~~PO~~<br>~~ee~~|
|Qg<br>~~ee~~<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~ees~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~i~~|66<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~i~~|nC<br>~~ee~~<br>~~es~~<br>~~i~~|ID= -6.6A<br>VDS= -120V<br>VGS= -10V, See Fig. 6 and 13<br>~~ee~~<br>~~es~~<br>~~®~~|
|Qgs<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge<br>~~ees ~~<br><br>~~es~~<br>~~ee~~<br>|–––<br> ~~ee ~~<br><br>~~es~~<br>~~es~~<br>|–––<br> ~~ee ~~<br><br>~~es~~<br>~~i~~<br>|8.1<br> ~~ee~~<br><br>~~es~~<br>~~i~~<br>|||
|Qgd<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~es~~<br><br>ee|–––<br>~~es~~<br>~~i~~<br>|35<br>~~es~~<br>~~i~~<br>|||
|td(on)<br>~~ee ~~<br>~~ee~~<br>~~es~~|Turn-On Delay Time<br> ~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>ee|14<br>~~i~~<br>~~ee~~|–––<br>~~i~~<br>~~ee~~|ns<br>~~i~~<br>~~+++,~~|VDD= -75V<br>ID= -6.6A<br>RG= 6.8Ω<br>RD= 12Ω,See Fig. 10<br>~~®~~<br>~~#&~~|
|tr<br> <br>~~ee~~<br>~~es~~|Rise Time<br> ~~ee ~~<br>|–––<br> ~~es~~<br><br>ee|36<br>|–––<br>|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off Delay Time<br>|–––<br>ee<br>|53<br>|–––<br>|||
|d(off)<br>tf<br>~~es+++,~~|Fall Time<br>~~+++,~~|–––<br>~~+++,~~|37<br>~~+++,~~|–––<br>~~+++,~~|||
|LD<br>~~es+++,~~|Internal Drain Inductance<br>~~+++,~~|–––<br>~~+++,~~|4.5<br>~~+++,~~|–––<br>~~+++,~~|nH<br>~~+++,~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~#&~~|
|LS<br>~~+++,~~<br>~~ee~~|Internal Source Inductance<br>~~+++,~~<br>~~eee~~|–––<br>~~+++,~~<br>~~eee~~|7.5<br>~~+++,~~<br>~~eee~~|~~+++,~~<br>~~eee~~|||
|||||–––<br>~~+++,~~<br>~~eee~~|||
|Ciss<br>~~+++,~~<br>~~ee~~<br>~~Rs~~|Input Capacitance<br>~~+++,~~<br>~~eee~~|–––<br>~~+++,~~<br>~~eee~~|860<br>~~+++,~~<br>~~eee~~<br>~~=~~|–––<br>~~+++,~~<br>~~eee~~<br>~~=~~|pF<br>~~+++,~~|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~#&~~|
|Coss<br>~~Rs~~<br>es|Output Capacitance|–––|220<br>~~=~~|–––<br>~~=~~|||
|Crss<br>~~Rs~~<br>es|Reverse Transfer Capacitance|–––|130<br>~~=~~|–––<br>~~=~~|||



**Notes:** ®© Repetitive rating;  pulse width limited by ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C 

@ Starting TJ = 25°C, L = 14mH ® RG = 25Ω, IAS = -6.6A. (See Figure 12) 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

## IRF6215PbF 

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**----- Start of picture text -----**<br>
100<br>                   VGS<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V<br>                  - 7.0V<br>                  - 6.0V<br>                  - 5.5V TPT oe Ey<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>at<br>10 iP Aioooeel<br>LU .. fs mee<br>) (ARE EEG eeeel<br>Zot<br>EE  -4.5V  20µs PULSE WIDTH<br>1 ——  T   = 25°CJc<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics, 

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100<br>eea es OO<br>Pp pb T  = 25°CJ tee<br>oa T  = 175°CJ<br>10<br>Eanny- age n<br>Seer 4oneeeee<br>AA<br>fe 7 Ae<br>> ¢oeeeeeeee<br> V     = -50VDS<br>7;<br>1 Acne  20µs PULSE WIDTH<br>4 5 6 7 8 9 10<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>                   VGS<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V<br>                  - 7.0V<br>                  - 6.0V<br>                  - 5.5V En eee ee<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>Hii aaill<br>ee) anMia n e<br>10<br>yy aime<br>ey Aan ns eee eeel<br>|<br>-4.5V<br>f—  20µs PULSE WIDTH mail|<br> T   = 175°CJC<br>1 eon ot<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics,<br>2.5<br> I    = -11AD<br>BPUNTT 02 UU CREE ETGEUE GEOR<br>2.0 HAGA NAGE AH QEERRAOEINEDA74<br>COC ae<br>1.5<br>PEPE EA<br>TT ae<br>1.0 ORAL<br>TTT<br>a<br>0.5<br>ST PEE<br>0.0 TTPPEE EEEPLE EEE LLLL  V      = -10V GS<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>D<br>-I   , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

## IRF6215PbF 

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2000 20<br>V      = 0V,         f = 1MHzC      = C     + C     ,   C     SHORTEDGSiss         gs         gd         ds  I    = -6.6AD  V      = -120VDS<br>C      = Crss         gd  V      = -75VDS<br>1600 C      = C     + Coss        ds         gd 16  V      = -30VDS<br>INE aa sw]<br>Se C iss ee See<br>1200 Sy Sat 12 | | yy |_|<br>aN SE ETT eee Ane<br>a C oss S| PL OY | |<br>800 8<br>| Nis 7 Ae<br>C rss<br>Nal EVA<br>400 a, Sl 4 ee ee ee ee<br> FOR TEST CIRCUIT<br>0 Sella Sill A 0 potPf     SEE FIGURE 13 fo |<br>1 10 100 0 20 40 60 80<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>10µs<br>T  = 175°CJ<br>10<br>T  = 25°CJ<br>| — ~A 10 PAN N 100µs E<br>ee | LAKRN O N<br>1 | ie) ee N N<br>of} f | fo NEA et<br>eee oe oe ee ee eee CoN 1ms<br> T     = 25°CC<br> T     = 175°CJ<br>0.1 PPnyPf ye pe V      = 0V GS A 1 IT  Single Pulse a Sa ! 10ms Ill<br>0.2 0.6 1.0 1.4 1.8 1 10 100 1000<br>-V     , Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>D<br>-I   , Drain Current (A)<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

## IRF6215PbF 

**==> picture [429 x 478] intentionally omitted <==**

**----- Start of picture text -----**<br>
15 RD<br>VDS<br>PEt TET |<br>12 SERRE VGS D.U.T.<br>RG<br>PEAKE EEE f +- VDD<br>9 PTT TAKE EE |<br>-10V<br>PE EEE EE Pulse Width  F ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>6 PT TT EEE EN EE » |<br>PTET EE EET IN Fig 10a.   Switching Time Test Circuit ;<br>3 PET TEE ENG<br>td(on) tr td(off) tf<br>PT tT ETE ET TTA _ _<br>VGS<br>0 10%<br>25 PEt 50 ett 75 100 ety 125 150 175 | 7,<br>T   , Case TemperatureC (  C)°<br>90% VA<br>Fig 9.   Maximum Drain Current Vs. VDS \_<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>poSpy<br>PT TT a<br> 1 PTSt<br>D = 0.50<br>L 0.20 e<br>0.10 SR et ee ee PDM<br>0.1 0.05<br>t1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>rT om ee ee<br>mT TE TY T E 1. Duty factor D =Notes: t   / t1 2<br>eeell 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

## IRF6215PbF 

**==> picture [155 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS L<br>RG D.U.T 1 VDD<br>IAS<br>-20V DRIVER<br>it tp 0.01Ω<br>15V<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [151 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>\<br>\<br>¢— tp<br>V(BR)DSS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
800<br>                    ID<br>TOP            -2.7A<br>                   -4.7A<br>BOTTOM    -6.6A<br>Kp\Gneeee<br>600 PN Jf<br>400<br>PATINN Tf tT<br>LT<br>200<br>SAK Et<br>SSR<br>pt | PSS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>-10V .3µF<br>QGS QGD D.U.T. +-VDS<br>VGS<br>V — G es<br>-3mA<br>oe |<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

## IRF6215PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

**==> picture [300 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
D.U.T * + Circuit Layout Considerations<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(faa)       Current Transformer<br>| [|] « -<br>+<br>- - +<br>wh<br>it<br>RG •  dv/dt controlled by RG +<br>s e ; •  ISD controlled by Duty Factor "D" - VDD<br>•  D.U.T. - Device Under Test<br>VGS<br>**----- End of picture text -----**<br>


*  Reverse Polarity of D.U.T for P-Channel 

**==> picture [297 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
O) Driver Gate Drive<br>P.W.<br>Period D =<br>ee P.W. Period<br>t<br>[          ] ***VGS=10V<br>\<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt fn<br>® D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>[    ]VDD<br>ma<br>Re-Applied YT<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5% [    ]ISD<br>**----- End of picture text -----**<br>


- *** VGS = 5.0V for Logic Level and 3V Drive Devices 

**Fig 14.** For P-Channel HEXFETS 

## IRF6215PbF 

## TO-220AB Package Outline 

Dimensions are shown in millimeters (inches) 

**==> picture [342 x 306] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| ce = 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>ae<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| darSee 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [1.40 (.055)] 1.15 (.045) i 3X0.36  (.014)        M    B   A   M [0.93 (.037)] 0.69 (.027) T 2.92 (.115)3X [0.55 (.022)] 0.46 (.018)<br>2.64 (.104)<br>2.54 (.100) || I<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>     2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.<br>TO-220AB Part Marking Information<br>EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER<br>IN THE ASSEMBLY LINE "C" RECTIFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DATE CODE<br>ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## TO-220AB Part Marking Information 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/03 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf6215pbf/mosfet-p-to-220/dp/1013514)
---

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