# Power MOSFET, N Channel, 60 V, 58 A, 8000 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2781111RL/)

**URL**: https://novapart.co/products/IRF60R217/power-mosfet-n-channel-60-v-58-a-8000-ohm-to-252
**SKU**: IRF60R217
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3980
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 58A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781111RL/)

IR MOSFET Strong _IR_ FET™ IRF60R217 ~~a~~ 

## ~~Cinfineon~~ 

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Application<br> Brushed Motor drive applications  D VDSS  60V<br> BLDC Motor drive applications<br>RDS(on) typ. 8.0m <br>Battery powered circuits<br>G<br> Half-bridge and full-bridge topologies               max  9.9m <br> Synchronous rectifier applications Resonant mode power supplies  S ID   58A<br>E==<br> OR-ing and redundant power switches<br> DC/DC and AC/DC converters<br> DC/AC Inverters  D<br>Benefits  S<br>G<br> Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness<br> Fully Characterized Capacitance and Avalanche SOA  D-Pak<br> Enhanced body diode dV/dt and dI/dt Capability    IRF60R217<br> Lead-Free, RoHS Compliant<br>G  D  S<br>Gate  Drain  Source<br>a<br>**----- End of picture text -----**<br>


|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF60R217|D-Pak|Tape and Reel|2000|IRF60R217|



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30<br>ID = 35A<br>25<br>20 eeAp tL<br>TJ = 125°C<br>15<br>Np<br>10<br>Wey<br>5 T = 25°C<br>J<br>0 a ane a<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

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60<br>5040 MTNeeTT<br>30<br>PT [TINE]<br>20<br>FN<br>10<br>TP i  tLtt]<br>0 | fl<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 ~~ee~~ 

IRF60R217 ~~C......_ |~~ 

## ~~Cinfin eon~~ 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**||**Max.**|**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)||58||||
|ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)||41|||A|
|IDM|Pulsed Drain Current||217|217|||
|PD @TC= 25°C|Maximum Power Dissipation||83|||W|
||Linear DeratingFactor||0.56|||W/°C|
|VGS|Gate-to-Source Voltage||± 20||± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|-55  to + 175|-55  to + 175||°C|
||SolderingTemperature,for 10 seconds (1.6mm fromcase)||300||||
|**Avalanche Characteristics**|||||||
|EAS (Thermally limited)<br>EAS (Thermally limited)|SinglePulseAvalancheEnergy <br>Single Pulse Avalanche Energy||85<br>124|124||mJ|
|IAR<br>EAR|Avalanche Current<br>Repetitive Avalanche Energy|See Fig 15, 16, 23a, 23b|||See Fig 15, 16, 23a, 23b|A<br>mJ|
|**Thermal Resistance**|||||||
|**Symbol**|**Parameter**|**Typ.**|**Typ.**||**Max.**|**Units**|
|RJC|Junction-to-Case|–––|||1.8||
|RJA|Junction-to-Ambient(PCB Mount) |–––|||50|°C/W|
|RJA|Junction-to-Ambient<br>–––||||110||



|**Symbol**<br>~~——~~|**Parameter**<br>~~——~~|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~——~~|Drain-to-Source Breakdown Voltage<br>~~——~~|60|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ<br>~~——~~|JBreakdown Voltage Temp. Coefficient<br>~~——~~|––– 0.047 –––<br>~~=~~|––– 0.047 –––<br>~~=~~|––– 0.047 –––<br>~~=~~|V/°C Reference to 25°C, I|V/°C Reference to 25°C, ID= 1mA|
|RDS(on)<br>~~——~~<br>~~——————~~|Static Drain-to-Source On-Resistance<br>~~——~~<br>~~——————~~|–––<br>~~——————~~<br>~~=~~|8.0<br>~~——————~~<br>~~=~~|9.9<br>~~——————~~<br>~~=~~|m<br>~~——————~~|VGS= 10V,ID= 35A<br>~~——————~~|
|||–––<br>~~——————~~<br>~~=~~|10<br>~~——————~~<br>~~=~~|–––<br>~~——————~~<br>~~=~~||VGS= 6.0V,ID= 18A<br>~~——————~~|
|VGS(th)<br>~~——————~~|GateThresholdVoltage<br>~~——————~~|2.1<br>~~——————~~<br>~~=~~|–––<br>~~——————~~<br>~~=~~|3.7<br>~~——————~~<br>~~=~~|V<br>~~——————~~|VDS= VGS,ID=50µA<br>~~——————~~|
|GS(th)<br>IDSS<br>~~EE~~|Drain-to-Source Leakage Current<br>~~EE~~|–––<br>~~= ~~<br>~~EE~~|–––<br> ~~=~~<br>~~EE~~|1.0<br>~~=~~<br>~~EE~~|µA<br>~~EE~~|VDS =60V, VGS =0V<br>~~EE~~|
|||–––<br>~~EE~~|–––<br>~~EE~~|150<br>~~EE~~||VDS=60V,VGS=0V,TJ=125°C<br>~~EE~~|
|IGSS<br>~~EE~~<br>~~FF~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~FF~~|–––<br>~~EE~~<br>~~FF~~|–––<br>~~EE~~<br>~~FF~~|100<br>~~EE~~<br>~~FF~~|nA<br>~~EE~~<br>~~FF~~<br>~~rs~~|VGS= 20V<br>~~EE~~<br>~~FF~~|
||Gate-to-SourceReverseLeakage<br>~~FF~~<br>~~rs~~|–––<br>~~FF~~<br>~~rir~~|–––<br>~~FF~~<br>~~tei~~|-100<br>~~FF~~<br>~~tt~~||VGS= -20V<br>~~FF~~|
|RG<br>~~ee~~|Gate Resistance<br>~~rs~~|–––<br>~~rir~~|2.0<br>~~tei~~|–––<br>~~tt~~|<br>~~rs~~||



## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

- Limited by TJmax, starting TJ = 25°C, L = 0.14mH, RG = 50, IAS = 35A, VGS =10V. 

-  ISD   35A, di/dt  862A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to 

- application note #AN-994.please refer to application note to AN-994:  http://www.irf.com/technical-info/appnotes/an-994.pdf  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 16A, VGS =10V. 

2 ~~ee~~ 

2016-01-05 

~~Cinfineon~~ 

IRF60R217 ~~C......_ |~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**||
|---|---|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. **<br>**Max. Units**<br>**Conditions**<br>gfs<br>Forward Transconductance<br>120<br>–––<br>–––<br>S<br>VDS= 10V,ID= 35A<br>Qg<br>Total Gate Charge<br>–––<br>40<br>66<br>ID= 35A<br>~~a~~<br>~~es~~<br>~~IS I I (QO~~<br>~~eees~~<br>~~es es~~||
|Qgs<br>Gate-to-Source Charge<br>–––<br>10<br>–––<br>VDS= 30V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>12<br>–––<br>VGS= 10V<br>Qsync<br>Total Gate Charge Sync.(Qg–Qgd)<br>–––<br>28<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>7.6<br>–––<br>ns<br>VDD=30V<br>tr<br>Rise Time<br>–––<br>29<br>–––<br>ID= 35A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>21<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>12<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>2170<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>210<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>130<br>–––<br>ƒ= 1.0MHz,  See Fig. 7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>228<br>–––<br>VGS= 0V, VDS = 0V to 48V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>283<br>–––<br>VGS= 0V,VDS = 0V to 48V<br>nC<br>~~eees~~<br>~~es es~~<br>~~eees~~<br>~~ee~~<br>~~ee~~~~**e**e~~<br>~~ae~~<br>~~s~~<br>~~es~~<br>~~ee~~<br>~~eees~~<br>~~eses~~<br>~~Oo~~<br>~~ee~~<br>~~a~~<br>~~a ee~~<br>~~ee ee ee~~<br>~~esrs~~<br>~~Irs UD I~~<br>~~rs~~||
|**Diode Characteristics**||
|**Symbol**<br>**Parameter **<br>**Min.**<br>**Typ. **<br>**Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>58<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>217<br>integral reverse<br>(Body Diode)<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>TJ= 25°C,IS= 35A,VGS= 0V<br>dv/dt<br>Peak Diode Recoverydv/dt<br>–––<br>18<br>–––<br>V/ns TJ= 175°C,IS= 35A,VDS= 60V<br>trr<br>Reverse Recovery Time<br>–––<br>27<br>–––<br>nsTJ =25°CVDD= 51V<br>–––<br>30<br>–––<br>TJ =125°CIF= 35A,<br>Qrr<br>Reverse Recovery Charge<br>–––<br>26<br>–––<br>nCTJ =25°Cdi/dt = 100A/µs<br>–––<br>33<br>–––<br>TJ =125°C <br>IRRM<br>Reverse Recovery Current<br>–––<br>1.7<br>–––<br>A<br>TJ= 25°C <br>D<br>S<br>G<br>~~ee~~<br>~~rs ts nD DO~~<br>~~fp~~<br>~~——————~~<br>~~eeRI~~<br>~~tN I~~<br>~~I~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~EE~~<br>~~PFtT~~<br>~~aes~~<br>~~es ee~~||
|3<br>2016-01-05<br>~~ee~~|2016-01-05|



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Cinfin eon IRF60R217<br>1000 1000<br>VGS<br>VGS<br>TOP           15V<br>TOP           15V<br>10V<br>10V<br>8.0V<br>8.0V<br>7.0V<br>7.0V<br>6.0V<br>6.0V<br>5.5V<br>100 5.5V 100 5.0V<br>5.0V<br>BOTTOM 4.5V<br>BOTTOM 4.5V<br>4.5V<br>10 Z| 10 A<br>4.5V<br>‘Zz fo<br> 60µs PULSE WI DTH   60µs  PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>1 1<br>es ii ea<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.5<br>ID = 35A<br>VGS = 10V<br>100 2.0<br>EEEEpee ay<br>TJ = 175°C<br>10 1.5<br>BE7 4a ily<br>TJ = 25°C<br>1 1.0<br>AT VDS = 25V TT<br> 60µs PULSE WIDTH<br>0.1 fh 0.5 LAL<br>2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## IRF60R217 

**Fig 4.** Typical Output Characteristics 

**Fig 5.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>Ciss<br>me<br>1000 TT<br>C oss<br>C rss<br>ae<br>aM<br>100 INS<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

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14<br>ID= 35A<br>12<br>VDS= 48V<br>10 VDS= 30V<br>VDS= 12V<br>6<br>8<br>> a<br>6<br>4<br>= aan<br>2<br>Ze<br>0 PEELE<br>0 10 20 30 40 50 60<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Gate Charge vs. Drain-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 8.** Typical Gate Charge vs. Drain-to-Source Voltage 4 2016-01-05 ~~a~~ 

2016-01-05 

IRF60R217 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>T J  = 175°C 100 100µsec<br>100<br>TF<br>TJ = 25°C 10 1msec<br>10<br>ff eralrah<br>1<br>10msec<br>1 ff Wp<br>0.1 Tc = 25°C DC<br>Tj = 175°C<br>V GS  = 0V Single Pulse<br>i<br>0.1 0.01<br>Paoon ae<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage  Fig 10.   Maximum Safe Operating Area<br>75 0.4<br>Id = 1.0mA<br>0.3<br>0.3<br>70<br>0.2<br>0.2<br>65<br>0.1<br>0.1<br>60 0.0<br>-60 -40 -20 0 20 40 60 80 100120140160180 0 10 20 30 40 50 60<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ISD, Reverse Drain Current (A)<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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24<br>VGS = 6.0V<br>VGS = 7.0V<br>20 VGS = 8.0V<br>VGS = 10V<br>+ S A<br>16 LE S<br>12<br>LASS<br>oe<br>8<br>Eaaeeeee<br>4<br>0 20 40 60 80 100 120 140 160<br>ID, Drain Current (A)<br>Fig 13.   Typical On-Resistance vs. Drain Current<br>5  2016-01-05<br>ee<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


~~Cinfin eon~~ 

IRF60R217 ~~C......_ |~~ 

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10<br>1 D = 0.50<br>0.20<br>0.10<br>eae<br>0.1 0.05<br>Seana 0.02 alll<br>0.01<br>0.01 Sesiv'20000)|<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>a |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>SEE Sai Se pulsewidth, eS  tav, assumin eee g Tj = 150°C and   SE<br>Tstart = 25°C (Single Pulse)<br>Sr<br>10<br>BRIN= HIP SeMctn<br>TN<br>1<br>HA oe |cc<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>PALE<br>0.1<br>att<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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100<br>TOP          Single Pulse<br>BOTTOM   1.0% Duty Cycle<br>80 I D  = 35A<br>KH<br>WN TLL<br>60<br>ANN<br>40<br>NIN<br>20<br>NST<br>LL EELEANSNY<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figures 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

EAS (AR) = PD (ave)·tav 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 6 2016-01-05 ~~re~~ 

IRF60R217 ~~C......_ |~~ 

## ~~Cinfineon~~ 

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4.5<br>4.0 TOOT<br>3.5<br>pean eee<br>3.0<br>SS<br>Ss<br>2.5<br>ID = 50µA<br>ID = 250µA<br>2.0<br>ID = 1.0mA<br>ID = 1.0A<br>ZN<br>1.5<br>HENS<br>1.0 BERRA<br>-75 -25 25 75 125 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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12<br>IF = 23A<br>10 V R = 51V ae<br>TJ = 25°C<br>8 T J = 125°C aa<br>an<br>6<br>wae<br>4<br>2 pla | |<br>AT<br>|<br>0 | ff<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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12<br>IF = 35A<br>10 V R = 51V<br>TJ = 25°C<br>T = 125°C<br>8 J BaZa<br>Zea<br>6<br>:<br>ean<br>4<br>A | | |<br>2<br>0 Pt tT |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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200<br>IF = 23A<br>180<br>VR = 51V<br>160 T  = 25°C<br>J<br>T = 125°C<br>140 J<br>ya<br>120<br>4<br>rT<br>100<br>80 ee_t<br>60<br>fetTt<br>40<br>20 erCA<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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200<br>IF = 35A FF<br>180<br>VR = 51V Ta<br>160 T  = 25°C<br>J<br>140 T J = 125°C e/a<br>7<br>120<br>100 AZ<br>re<br>80 Tt<br>tT<br>60<br>err<br>40<br>ee<br>20<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>Fig 21.   Typical Stored Charge vs. dif/dt<br>7  2016-01-05<br>ee<br>QRR (nC)<br>**----- End of picture text -----**<br>


IRF60R217 ~~EE~~ 

## ~~Oe~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


**==> picture [17 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**==> picture [106 x 25] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th) |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 

2016-01-05 

IRF60R217 ~~C......_ |~~ 

## ~~Cinfineon~~ 

D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 

## D-Pak (TO-252AA) Part Marking Information 

**==> picture [401 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE fHo F<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL<br>OR DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO<br>PRODUCT (OPTIONAL)<br>12 34<br>yn P11 6 4 P =  DESIGNATES LEAD-FREE<br>PRODUCT QUALIFIED TO THE<br>ASSEMBLY<br>LOT CODE CONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

2016-01-05 

IRF60R217 ~~C......_ |~~ 

## ~~Cinfineon~~ 

D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) 

**==> picture [402 x 347] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


## NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 2016-01-05 ~~ee~~ 

|<br>IRF60R217<br>infineon~~el~~|<br>IRF60R217<br>infineon~~el~~|<br>IRF60R217<br>infineon~~el~~|<br>IRF60R217<br>infineon~~el~~|<br>IRF60R217<br>infineon~~el~~|<br>IRF60R217<br>infineon~~el~~|
|---|---|---|---|---|---|
||**Qualification Information† **|||||
||||Industrial|||
||**Qualification Level**||(per JEDEC JESD47F)††|||
||**Moisture Sensitivity Level**|D-Pak|MSL1|||
||**RoHS Compliant**||Yes|||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

††  Applicable version of JEDEC standard at the time of product release. 

## **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

11 2016-01-05 ~~ee~~ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF60R217/power-mosfet-n-channel-60-v-58-a-8000-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf60r217/mosfet-n-ch-60v-58a-to-252/dp/2781111RL)
---

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