# Power MOSFET, P Channel, 20 V, 4 A, 0.0471 ohm, TSOP, Surface Mount

![Product image](https://novapart.co/image/farnell:1298523RL/)

**URL**: https://novapart.co/products/IRF5806TRPBF.../power-mosfet-p-channel-20-v-4-a-00471-ohm-tsop
**SKU**: IRF5806TRPBF...
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0920
**Stock**: 10+

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0471ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-1.2V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | TSOP |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.0471ohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298523RL/)

## IRF5806PbF 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free 

HEXFET[®] Power MOSFET 

|**VDSS**<br>**-20V**|**RDS(on) max**<br>86mΩ@VGS= -4.5V<br>147mΩ@VGS= -2.5V|**ID**<br>-4.0A<br>-3.0A|
|---|---|---|



## **Description** 

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications. 

The  TSOP-6  package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23.  This package is ideal for applications where printed circuit board space is at a premium.   It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. 

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A<br>D 1 6 D<br>D 2 5 D<br>G 3 4 S<br>Top View TSOP-6<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

a **Parameter Max. Units** VDS Drain-Source Voltage -20 V ~~ae~~ ID @ TA = 25°C ~~a~~ Continuous Drain Current, VGS @ -4.5V -4.0 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.3 A ~~TT~~ IDM Pulsed Drain Current -16.5 ~~a~~ PD @TA = 25°C ~~a~~ Maximum Power Dissipation 2.0 W ~~eee~~ PD @TA = 70°C Maximum Power Dissipation 1.3 W Linear Derating Factor                                                                     0.02                               W/°C ~~es~~ VGS ~~**e**~~ Gate-to-Source Voltage ~~ee~~ ± 20                                  V ~~e a~~ TJ , TSTG Junction and Storage Temperature Range -55  to + 150 °C 

## **Thermal Resistance** 

~~a~~ **Parameter Max. Units** RθJA Maximum Junction-to-Ambient 62.5 °C/W ~~a~~ www.irf.com 1 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~Od~~|~~rs rs~~|~~rs~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>rs|**Min. **<br>rs<br>~~Od~~<br>~~Ors~~|**Typ. **<br>rs<br>~~rs rs~~<br>~~GG~~|**Max.**<br>rs<br>~~rs~~<br>~~GG~~|**Units**<br>rs<br>~~GG~~|**Conditions**<br>rs|
|V(BR)DSS<br>~~Bo~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~Bo~~|-20<br>~~Od ~~<br>~~rs~~<br>~~Ors~~|–––<br> ~~rs rs~~<br>~~rs~~<br>~~GG~~<br>~~GG~~|–––<br>~~rs~~<br>~~rs~~<br>~~GG~~<br>~~GG~~|V<br>~~rs~~<br>~~GG~~<br>~~GG~~|VGS= 0V, ID= -250µA<br>~~rs~~|
|∆V(BR)DSS/∆TJ<br>~~Bo~~|Breakdown Voltage Temp. Coefficient<br>~~Gs~~<br>~~Bo~~|––– <br>~~Ors~~<br>~~Gs~~<br>~~REY~~|0.011<br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>~~REY~~|–––<br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>~~REY~~|V/°C<br>~~GG~~<br>~~Gs~~<br>~~GG~~|Reference to 25°C, ID= -1mA<br>~~Gs~~<br>RK~~3~~|
|RDS(on)<br>~~Bo~~|Static Drain-to-Source On-Resistance<br>~~Bo~~|–––<br>~~REY~~|47.1<br>~~GG~~<br>~~REY~~|86<br>~~GG~~<br>~~REY~~|mΩ<br>~~GG~~<br>~~es~~|VGS= -4.5V, ID= -4.0A<br>RK~~3~~|
|||~~REY~~<br>[—|<br>~~rs rs~~|67.5<br>~~GG~~<br>~~REY~~<br>[—|<br>~~rs~~|147<br>~~GG~~<br>~~REY~~<br>[—|<br>~~rs~~||VGS= -2.5V, ID= -3.0A<br>RK~~3~~|
|VGS(th)<br>~~Bo~~|Gate Threshold Voltage<br>~~Bo~~<br>~~rs~~|-0.45<br>~~REY~~<br>~~rs~~<br>~~rs rs~~<br>~~Gre~~|–––<br>~~GG~~<br>~~REY~~<br>~~rs~~<br>~~rs~~<br>~~Gr~~|-1.2<br>~~GG~~<br>~~REY~~<br>~~rs~~<br>~~rs~~|V<br>~~GG~~<br>~~rs~~<br>~~es~~|VDS= VGS, ID= -250µA<br>RK ~~3~~<br>~~rs~~|
|gfs|Forward Transconductance<br>~~rs~~|6.4<br>~~rs rs~~<br>~~rs~~<br>~~Gre~~|–––<br>~~rs ~~<br>~~rs~~<br>~~Gr~~|–––<br> ~~rs~~<br>~~rs~~|S<br>~~es~~<br>~~rs~~|VDS= -10V, ID= -4.0A<br>~~rs~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ES~~<br>~~|~~|–––<br>~~Gre ~~<br>~~ES~~<br>~~||~~|–––<br> ~~Gr~~<br>~~ES~~<br>~~|~~|-15<br>~~ES~~<br>~~|~~|~~ES~~<br>~~Po~~|VDS= -16V, VGS= 0V<br>~~ES~~<br>~~Po~~|
|||–––<br>~~ES~~<br>~~||~~|–––<br>~~ES~~<br>~~|~~|-25<br>~~ES~~<br>~~|~~||VDS= -16V, VGS= 0V, TJ= 70°C<br>~~ES~~<br>~~Po~~|
||Gate-to-Source Forward Leakage<br>~~|~~<br>~~oo~~<br>~~ee~~|–––<br>~~| |~~<br>~~oo~~<br>~~eeee~~|–––<br>~~| ~~<br>~~oo~~<br>~~ee~~|-100<br> ~~| ~~|~~Po~~<br>i<br>~~PO~~|VGS= -12V<br>~~Po~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~oo~~<br>~~ee~~<br>~~|~~|–––<br>~~oo~~<br>~~eeee~~<br>+}|–––<br>~~oo~~<br>~~ee~~<br>+}|100<br>+}—||VGS= 12V<br>~~PO~~|
|Qg|Total Gate Charge<br>~~ee ~~<br>~~|~~|–––<br> ~~eeee~~<br>+}<br>ee|8.3<br>~~ee~~<br>+}<br>ee|11.4<br>+}—<br>ee|nC<br>~~PO~~|ID= -4.0A<br>VDS= -16V<br>VGS= -4.5V<br>~~PO~~|
|Qgs|Gate-to-Source Charge<br>~~|~~<br>~~ee~~|–––<br>+}<br>~~ee~~<br>ee|1.2<br>+}<br>~~ee~~<br>ee|–––<br>+}—<br>ee|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~|~~ <br>~~ee~~|–––<br> +}<br>ee <br>~~ee~~<br>ee|2.6<br>+}<br> ee<br>~~ee~~|–––<br>+} —<br>ee<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~<br>ee<br>ee|6.2<br>~~ee~~|9.3||VDD= -10V, VGS= -4.5V<br>ID= -1.0A<br>RG= 6.0Ω<br>RD= 10Ω<br>~~@~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee<br>~~ee~~<br>|27<br>~~ee~~|41|||
|td(off)|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~ee~~<br>~~ee~~|94<br>~~ee~~|140|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>ee|126|190|||
|Ciss|Input Capacitance<br>~~ee ~~<br>~~ee~~|–––<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>ee<br>ee|594<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -15V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|114<br>~~ee~~|–––|||
|Crss|Reverse Transfer Capacitance|–––<br>ee|87|–––|||



## **Source-Drain Ratings and Characteristics** 

||||~~rd~~|~~es~~|~~es~~||
|---|---|---|---|---|---|---|
|re<br>~~EF~~|**Parameter**<br>re<br>~~EF~~|**Min. **<br>re<br>~~EF eH~~|**Typ. **<br>re<br>~~rd~~<br>~~eH~~|**Max.**<br>re<br>~~es~~<br>~~eH~~|**Units**<br>re<br>~~es~~<br>~~|~~|**Conditions**<br>re<br>~~|~~<br>~~Ge~~|
|IS<br>~~EF~~|Continuous Source Current<br>(Body Diode)<br>~~EF~~|~~EF eH~~|~~rd ~~<br>~~eH~~|-2.0<br> ~~es ~~<br>~~eH~~|~~es~~<br>~~|~~<br>~~es~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~|~~<br>~~Ge~~<br>~~es~~|
|ISM<br>~~EF~~<br>~~Rses~~<br>~~Se~~|Pulsed Source Current<br>(BodyDiode)<br>~~EF~~<br>~~es~~|~~EF eH~~<br>~~es~~<br>~~ss~~|~~eH~~<br>~~es~~<br>~~ss~~|-16.5<br>~~eH~~<br>~~es~~|||
|VSD<br>~~EF~~<br>~~Rses~~<br>~~Se~~<br>~~a~~|Diode Forward Voltage<br>~~EF~~<br>~~es~~<br>~~ened~~|–––<br>~~EF eH~~<br>~~es~~<br>~~ss~~<br>ee|–––<br>~~eH~~<br>~~es~~<br>~~ss~~<br>eee|-1.2<br>~~eH~~<br>~~es~~<br>ees|V<br>~~|~~<br>~~es~~<br>ee|TJ= 25°C, IS= -2.0A, VGS= 0V<br>~~|~~<br>~~Ge~~<br>~~es~~|
|trr<br>~~Rses~~<br>~~Se~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~ened~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~<br>ee<br>ee|116<br>~~es~~<br>~~ss~~<br>eee<br>ee|174<br>~~es~~<br>ees|ns<br>~~es~~<br>ee|TJ= 25°C, IF= -2.0A<br>di/dt = -100A/µs<br>~~es~~<br>@|
|Qrr<br>~~Se~~<br>~~a~~|Reverse Recovery Charge<br>~~ened~~<br>~~es~~|–––<br>~~ss~~<br>ee<br>ee|90<br>~~ss~~<br>eee<br>ee|135<br>ees|nC<br>ee||



Repetitive rating; pulse width limited by max. junction temperature. @ Pulse width ≤ 300µs ; duty cycle ≤ 2%, 

When mounted on 1 inch square Copper board, t ≤ 10sec 

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 100<br> 100 VGS<br>VGS TOP -7.5V<br>TOP -7.5V -5.0V<br>-5.0V-4.5V-3.5V-3.0V -4.5V-3.5V-3.0V<br>-2.7V -2.7V<br>-2.0V -2.0V<br>BOTTOM -1.5V 1 BOTTOM -1.5V Vee LL TIT<br> 10 fe r II  10 e y)22 el<br>-1.50V -1.50V<br>Vii aA Y 77s ae<br> 1 Za AA  1 20<br>SA ee 2 ee<br>co m 20µs PULSE WIDTHT  = 25J m} °C 20µs PULSE WIDTHT  = 150J °C<br>0.1 0.1<br>0.1  1  10  100 0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.0<br>ID = -4.0A<br>po n T<br>a es ee es ee ee ee ee<br>SSS]a 1.5 L U<br>tt T  = 25  CJ ° t EEEPe |<br> 10 leet 1.0 TL<br>enSSS a ae T  = 150  CJ es ° a || | pe<br>ee co<br>ee [A] SS tee<br>a CUE<br>0.5<br>V      = -15VDS<br> 1 p pp 20µs PULSE WIDTH 0.0 CE T VGS = -4.5V<br>1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>-V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>-I   ,  Drain-to-Source Current (A) -I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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1000 VGS = 0V, f = 1MHz 10 ID = -4.0A VDS =-16V<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>Crss = Cgd<br>800 Po|| C ooo oss = Cds + Cgd ooo 8 ee PotPT tTtT | | |TY\L<br>Ciss<br>600 ceee ee lllll 6 P|Pt || ||Tr]| ct A<br>400 a el 4 Pt | tT YT | ft<br>ee ll rT | YT Ft Tf 4<br>200 e Coss l 2 rT TA | oT<br>Ie Crss IIl PTTT Toll<br>0  1  10  100 0 Vittt<br>0 4 8 12 16<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>a =a:<br>es A<br>10us<br> 10 | | | | Ee  10 a ll) 20s<br>T  = 150  CJ ° 100us<br>1ms<br> 1 ee a) A  1 ood eR<br>aon | a l<br>T  = 25  CJ ° 10ms<br>pf fe p  T TCJ = 25  C= 150  C° ° p p<br>0.1 |eyff Ae | | V      = 0 V GS 0.1 p  Single Pulse f LeTHe osbane LI<br>0.2 0.6 1.0 1.4 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
5.0 Pt te tT | tT Vos im<br>4.0 pi} tt} tt Tt Ves<br>PS | Ro) — -<br>+<br>3.0 PP PN |<br>P| tT PNET Ves ≤ 1<br>≤ 0.1 %<br>2.0 See Ne Biya<br>SRR eeeeNe<br>Fig 10a.   Switching Time Test Circuit<br>SERRE<br>1.0<br>td(on) tr td(off) tf<br>Pt} tt yp tN VGS |, _<br>0.0 pt tp et | Et 10% rT<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>90% _A<br>Fig 9.   Maximum Drain Current Vs. VDS \<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>P C ere CH<br>0.20<br>ee men al<br> 10<br>0.10<br>0.05 ——T oa—-=0<br>0.02<br>0.01 PDM<br> 1 SINGLE PULSE<br>ee (THERMAL RESPONSE) e t1<br>t2<br>APT TTT e TT TTT Notes:<br>1. Duty factor D = t   / t1 2<br>a 2. Peak TJ = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.20 fp ft ff tp 0.20 e e<br>0.16<br>0.15<br>ee e<br>VGS = -2.5V<br>0.12<br>e e ee ee e<br>0.10<br>ACR ID = -4.0A E 0.08 Le ee<br>VGS = -4.5V<br>0.05<br>SH 0.04 [SE<br>e re<br>0.00 PPE PEPE} 0.00 0<br>1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 0 5 10 15 20<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current ( A )<br>Fig 12.    Typical On-Resistance Vs. Fig 13.    Typical On-Resistance Vs.<br>Gate Voltage Drain Current<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>QG .3µF<br>10 Te) D.U.T. | +-VDS<br>ve<br>QGS QGD<br>VGS<br>VG -3mA<br>i _ i (ny |<br>Ont.<br>IG ID<br>Current Sampling Resistors<br>Charge<br> )<br>Ω<br>RDS ( on ) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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0.8 100<br>0.7 O a M a<br>80<br>0.6<br>ID = -250µA 60<br>REE Ml<br>0.5<br>40<br>c o as t M TT<br>0.4<br>eee 20 A<br>0.3<br>C EPT a<br>0.2 0<br> EETTS U I<br>-75 -50 -25 0 25 50 75 100 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000<br>TJ , Temperature ( °C ) Time (sec)<br>Power (W)<br>-VGS(th) ( V )<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th) Vs. Junction Temperature 

Typical Power Vs. Time 

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20085<br>2006 «= «6<br>20072008 7<br>2009<br>2010 0 24<br>ef y<br>"<br>)<br>*<br>**----- End of picture text -----**<br>


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�<br>**----- End of picture text -----**<br>


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=~K 50<br>51 Y<br>52<br>,<br>$<br>*<br>+<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ 

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Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2010 

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