# Power MOSFET, P Channel, 30 V, 3.8 A, 0.098 ohm, TSOP, Surface Mount

![Product image](https://novapart.co/image/farnell:1298522/)

**URL**: https://novapart.co/products/IRF5805TRPBF/power-mosfet-p-channel-30-v-38-a-0098-ohm-tsop
**SKU**: IRF5805TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1080
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 2W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.098ohm |
| Transistor Case Style | TSOP |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.8A |
| Drain Source On State Resistance | 0.098ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298522/)

PD -95340A 

## IRF5805PbF 

Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free 

HEXFET[®] Power MOSFET 

|**VDSS**<br>**-30V**|**RDS(on) max**|**ID**<br>-3.8A<br>-3.0A|
|---|---|---|
||**DS(on)**<br>0.098@VGS= -10V<br>0.165@VGS= -4.5V||



## **Description** 

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.  This benefit provides the designer with an extremely efficient device for use in battery and load management applications. 

The  TSOP-6  package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23.  This package is ideal for applications where printed circuit board space is at a premium.   It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. 

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A<br>D 1 6 D<br>D 2 5 D<br>G 3 4 S<br>Top View TSOP-6<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**<br>a|**Max.**<br>a|**Units**<br>a|
|---|---|---|---|
|VDS|Drain-Source Voltage|-30|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ -10V|-3.8|A<br>~~a~~<br>~~a~~|
|ID@ TA= 70°C<br>~~a~~|Continuous Drain Current, VGS@ -10V<br>~~a~~|-3.0<br>~~a~~||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~a~~|-15<br>~~a~~||
|PD@TA= 25°C<br>~~a~~|Maximum Power Dissipation<br>~~a~~|2<br>~~a~~|W<br>~~a~~|
|PD@TA= 70°C<br>~~ET~~|Maximum Power Dissipation<br>~~ET~~|1.28<br>~~ET~~|W<br>~~ET~~|
|Linear Deratin<br>~~a~~<br>~~Sg~~|Linear DeratingFactor                                                                     0.02                               W/°C|Factor                                                                     0.02                               W/°C|Factor                                                                     0.02                               W/°C|
|VGS<br>~~Sg~~|GSGate-to-Source Voltage<br>± 20                                  V|± 20                                  V|± 20                                  V|
|TJ, TSTG<br>~~Sg~~|Junction and Storage Temperature Range|-55  to + 150|°C|



**Thermal Resistance Parameter Max. Units** RθJA Maximum Junction-to-Ambient 62.5 °C/W ~~————~~ www.irf.com 1 04/20/10 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~Od~~|~~rs rs~~|~~rs~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>rs|**Min. **<br>rs<br>~~Od~~<br>~~Ors~~|**Typ. **<br>rs<br>~~rs rs~~<br>~~GG~~|**Max.**<br>rs<br>~~rs~~<br>~~GG~~|**Units**<br>rs<br>~~GG~~|**Conditions**<br>rs|
|V(BR)DSS<br>~~Bo~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~Bo~~|-30<br>~~Od ~~<br>~~rs~~<br>~~Ors~~|–––<br> ~~rs rs~~<br>~~rs~~<br>~~GG~~<br>~~GG~~|–––<br>~~rs~~<br>~~rs~~<br>~~GG~~<br>~~GG~~|V<br>~~rs~~<br>~~GG~~<br>~~GG~~|VGS= 0V, ID= -250µA<br>~~rs~~|
|∆V(BR)DSS/∆TJ<br>~~Bo~~|Breakdown Voltage Temp. Coefficient<br>~~Gs~~<br>~~Bo~~|–––<br>~~Ors~~<br>~~Gs~~<br>~~REY~~|0.02<br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>~~REY~~|–––<br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>~~REY~~|V/°C<br>~~GG~~<br>~~Gs~~<br>~~GG~~<br>|Reference to 25°C, ID= -1mA<br>~~Gs~~<br>~~RK~~|
|RDS(on)<br>~~Bo~~|Static Drain-to-Source On-Resistance<br>~~Bo~~|–––<br>~~REY~~|––– <br>~~GG~~<br>~~REY~~|0.098<br>~~GG~~<br>~~REY~~|Ω<br>~~GG~~<br><br>~~es~~|VGS= -10V, ID= -3.8A<br>~~RK~~|
|||~~REY~~<br>[—|<br>~~rs rs~~|––– <br>~~GG~~<br>~~REY~~<br>[—|<br>~~rs~~|0.165<br>~~GG~~<br>~~REY~~<br>[—|<br>~~rs~~||VGS= -4.5V, ID= -3.0A<br>~~RK~~|
|VGS(th)<br>~~Bo~~|Gate Threshold Voltage<br>~~Bo~~<br>~~rs~~|-1.0<br>~~REY~~<br>~~rs~~<br>~~rs rs~~<br>~~Gre~~|–––<br>~~GG~~<br>~~REY~~<br>~~rs~~<br>~~rs~~<br>~~Gr~~|-2.5<br>~~GG~~<br>~~REY ~~<br>~~rs~~<br>~~rs~~|V<br>~~GG~~<br> <br>~~rs~~<br>~~es~~|VDS= VGS, ID= -250µA<br> ~~RK~~<br>~~rs~~|
|gfs|Forward Transconductance<br>~~rs~~|3.5<br>~~rs rs~~<br>~~rs~~<br>~~Gre~~|–––<br>~~rs ~~<br>~~rs~~<br>~~Gr~~|–––<br> ~~rs~~<br>~~rs~~|S<br>~~es~~<br>~~rs~~|VDS= -10V, ID= -3.8A<br>~~rs~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ES~~<br>~~|~~|–––<br>~~Gre ~~<br>~~ES~~<br>~~||~~|–––<br> ~~Gr~~<br>~~ES~~<br>~~|~~|-15<br>~~ES~~<br>~~|~~|~~ES~~<br>~~Po~~|VDS= -24V, VGS= 0V<br>~~ES~~<br>~~Po~~|
|||–––<br>~~ES~~<br>~~||~~|–––<br>~~ES~~<br>~~|~~|-25<br>~~ES~~<br>~~|~~||VDS= -24V, VGS= 0V, TJ= 70°C<br>~~ES~~<br>~~Po~~|
|~~PO~~<br>~~2~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~oo~~<br>~~PO~~|–––<br>~~| |~~<br>~~oo~~|–––<br>~~| ~~<br>~~oo~~|-100<br> ~~| ~~|~~Po~~<br>i<br>~~PO~~|VGS= -20V<br>~~Po~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~oo~~<br>~~PO~~<br>~~2~~<br>~~——~~|–––<br>~~oo~~<br>~~——~~|–––<br>~~oo~~<br>~~——~~|100<br>~~——~~||VGS= 20V<br>~~PO~~|
|Qg<br>~~PO~~<br>~~2~~|Total Gate Charge<br>~~PO~~<br>~~2~~<br>~~——~~|–––<br>~~——~~<br>ee|11<br>~~——~~<br>ee|17<br>~~——~~<br>ee|nC<br>~~PO~~|ID= -3.8A<br>VDS= -15V<br>VGS= -10V<br>~~PO~~|
|Qgs<br>~~2~~|Gate-to-Source Charge<br>~~2~~<br>~~——~~<br>~~ee~~|–––<br>~~——~~<br>~~ee~~<br>ee|2.3<br>~~——~~<br>~~ee~~<br>ee|–––<br>~~——~~<br>ee|||
|Qgd<br>~~2~~|Gate-to-Drain("Miller")Charge<br>~~2~~<br>~~——~~<br>~~ee~~|–––<br>~~——~~<br>ee <br>~~ee~~<br>ee|1.5<br>~~——~~<br> ee<br>~~ee~~|–––<br>~~——~~<br>ee<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~<br>ee<br>ee|11<br>~~ee~~|17||VDD= -15V, VGS= -10V<br>ID= -1.0A<br>RG= 6.0Ω<br>RD= 15Ω<br>~~@~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee<br>~~ee~~<br>|14<br>~~ee~~|21|||
|td(off)|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~ee~~<br>~~ee~~|90<br>~~ee~~|135|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>ee|49|74|||
|Ciss|Input Capacitance<br>~~ee ~~<br>~~ee~~|–––<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>ee<br>ee|511<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|79<br>~~ee~~|–––|||
|Crss|Reverse Transfer Capacitance|–––<br>ee|50|–––|||



## **Source-Drain Ratings and Characteristics** 

||||~~rd~~|~~es~~|~~es~~||
|---|---|---|---|---|---|---|
|re|**Parameter**<br>re|**Min. **<br>re|**Typ. **<br>re<br>~~rd~~|**Max.**<br>re<br>~~es~~|**Units**<br>re<br>~~es~~|**Conditions**<br>re|
|IS|Continuous Source Current<br>(Body Diode)||~~rd ~~|-2.0<br> ~~es ~~|~~es~~<br>~~es~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~es~~|
|ISM<br>~~Rses~~<br>~~Se~~|Pulsed Source Current<br>(BodyDiode)<br>~~es~~|~~es~~<br>~~ss~~|~~es~~<br>~~ss~~|-15<br>~~es~~|||
|VSD<br>~~Rses~~<br>~~Se~~<br>~~a~~|Diode Forward Voltage<br>~~es~~<br>~~ened~~|–––<br>~~es~~<br>~~ss~~<br>ee|–––<br>~~es~~<br>~~ss~~<br>eee|-1.2<br>~~es~~<br>ees|V<br>~~es~~<br>ee|TJ= 25°C, IS= -2.0A, VGS= 0V<br>~~es~~|
|trr<br>~~Rses~~<br>~~Se~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~ened~~<br>~~es~~|–––<br>~~es~~<br>~~ss~~<br>ee<br>ee|19<br>~~es~~<br>~~ss~~<br>eee<br>ee|29<br>~~es~~<br>ees|ns<br>~~es~~<br>ee|TJ= 25°C, IF= -2.0A<br>di/dt = -100A/µs<br>~~es~~<br>@|
|Qrr<br>~~Se~~<br>~~a~~|Reverse Recovery Charge<br>~~ened~~<br>~~es~~|–––<br>~~ss~~<br>ee<br>ee|16<br>~~ss~~<br>eee<br>ee|24<br>ees|nC<br>ee||



@ Repetitive rating;  pulse width limited by max. junction temperature. 

Surface mounted on 1 in square Cu board,  t ≤ 10sec. 

Pulse width ≤ 400µs duty cycle ≤ 2% 

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100<br>VGS<br>TOP          -10.0V<br>FETE                   -4.5V                  -3.7V<br>                  -3.5V<br>10 ||)                   -3.3V |<br>                  -3.0V<br>                  -2.7V<br>BOTTOM   -2.5V<br>1<br>ETH<br>0.1<br>2409 4\(||| -2.5V<br>20µs PULSE WIDTH<br>Tj = 25°C<br>TR | ll<br>0.01 pti |\\iam reaver ed|<br>0.1 1 10 100<br>-VDS , Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br> 100<br>ee<br>SS aaa<br>a a ee eee ee eee<br> 10 |SEE —| OOee———<br>ae<br>es ee ee ee ee eee<br>° ee<br>a T  = 150  CJ<br>Ga ne<br>Wg~—\—<br> 1 Pi|AYWi = A T  = 25  CJ | ° |——| |<br>ee———ey 2 seee ee ee<br>V      = -15VDS<br>ns 20µs PULSE WIDTH<br>0.1<br>2.0 3.0 4.0 5.0 6.0<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>VGS<br>TOP          -10.0V<br>FTE                   -4.5V                  -3.7V |<br>                  -3.5V<br>10 Zl                   -3.3V |<br>                  -3.0V<br>                  -2.7V<br>BOTTOM   -2.5V<br>1<br>ZabNisa -2.5V<br>0.1<br>20 20<br>20µs PULSE WIDTH<br>Tj = 150°C<br>0.01 HEmaniil pppmail<br>0.1 1 10 100<br>-VDS , Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = -3.8A<br>Pe ELEEE<br>E EE<br>1.5<br>eelLL 1<br>|<br>EE<br>1.0 Te rT<br>LL pPoaell<br>een<br>=aand<br>PEE EEE EE<br>0.5<br>EEE<br>0.0 PERDADGA TART UA RAR VGS = -10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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800 VGS   = 0V,     f = 1 MHZ 16 ID = -3.8A<br>Ciss  = Cgs + Cgd, Cds  SHORTED VVDSDS==-24V-15V<br>C   = C<br>rss   gd<br>600 ni C oss    = C ds  + C gd 12 ppp<br>in ALLEL nae<br>Ciss<br>S Sooo) EEL<br>400 8<br>SA etZ<br>ll |<br>200 4<br>Coss<br>ee ALE LLL<br>| || ATLL LL<br>Crss eee y<br>0 oS TLL ALT TTT<br>0<br>1 10 100 0 2 4 6 8 10 12 14<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>10us<br> 10  10<br>SEEEEDZAEEREE na 2a aS<br>S T  = 150  CJ ° SS SHS PRPS<br>100us<br>ASSESS ee ill eeeeei ea<br> 1 rtPTT|  AyEJA  TTT| f | tf tf ft lt  1 PaaniEI Ce EY 1ms TI<br>T  = 25  CJ ° 10ms<br> T TCJ = 25  C= 150  C° °<br>0.1 E EE L PA V      = 0 V GS 0.1 s  Single Pulse c IiLCe n il<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1  1  10  100<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>-<br>SD<br>-I     , Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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4.0 MA EE Vos» Av<br>3.0 PT ALLEL»~  EL Ves D.U.T.<br>-<br>N\ Re +<br>PoPASSEE I.<br>2.0 ≤ 1<br>≤ 0.1 %<br>PETE EL NE EI On<br>PE LE ELEN\] PulseSa an Width = ys<br>1.0 PEtPOEEEEELTEE LNGEN Fig 10a. td(on)  Switching Time Test Circuittr td(off) | tf<br>VGS<br>0.0 Pere 10% ype2 een<br>25 50 75 100 125 150 VV<br>T   , Case TemperatureC (  C)°<br>90% \ |<br>Fig 9.   Maximum Drain Current Vs. VDS ey,<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>D = 0.50<br>Spggeesiitt emetic seetf<br>PB 0.20 ant<br> 10 e e<br>0.10<br>0.05<br>e ee<br>0.02<br>PDM<br>| 0.01 a<br> 1 poe oe) co SINGLE PULSE t1<br>(THERMAL RESPONSE)<br>oy ce t2<br>a Notes:<br>1. Duty factor D = t   / t1 2<br>| 2. Peak TJ= P DM x  ZthJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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0.500 Pty 0.400<br>0.450 tT | tt<br>Pit<br>0.400 | | Ty<br>Pty 0.300<br>0.350 | | eT yt<br>0.300 Pty VGS = -4.5V<br>0.200<br>0.250 Pt; tT tT Tt<br>0.200 || yt | VGS = -10V<br>ID = -3.8A<br>0.150 0.100<br>P| ttA} |TyTytt<br>0.100<br>0.050 Pt | tT | 0.000<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 5 10 15 20<br>-VGS, Gate -to -Source Voltage  (V) -ID , Drain Current ( A )<br> )<br>RDS ( on ) , Drain-to-Source On Resistance ( Ω<br>)<br>ΩRDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


## **Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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QG<br>QGS QGD<br>VG<br>fe<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>ne D.U.T. +-VDS<br>VGS<br>-3mA<br>@ |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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30<br>2.5<br>25<br>2.3 PL yy Py TOMIACUI CAVE CUE CUT<br>a ACMI<br>20<br>PINE NA I<br>2.1 PT INE I D  = -250µA m NIC TOIT<br>i — 15 PUNT CAWME CUECCU<br>1.9 tt PN EE CHENIN CT<br>10<br>So PUNE CME CHUM CHIC CUI<br>MI PTOI ATT<br>1.7 PENCE 5 0S<br>P| | | ttt oyN PTNT<br>1.5 FT of | fot yt IN 0 PA TT<br>0.001 0.010 0.100 1.000 10.000 100.000<br>-75 -50 -25 0 25 50 75 100 125 150<br>Time (sec)<br>TJ , Temperature ( °C )<br>-VGS(th) ( V ) Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Vgs(th) Vs. Junction Temperature 

Typical Power Vs. Time 

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**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ 

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Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2010 

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