# Power MOSFET, P Channel, 40 V, 3.4 A, 0.112 ohm, TSOP, Surface Mount

![Product image](https://novapart.co/image/farnell:1298520RL/)

**URL**: https://novapart.co/products/IRF5803TRPBF/power-mosfet-p-channel-40-v-34-a-0112-ohm-tsop
**SKU**: IRF5803TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.112ohm; Rds(on); Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TSOP |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.4A |
| Drain Source On State Resistance | 0.112ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298520RL/)

IRF5803PbF ~~—~~ 

## ~~Cinfineon~~ 

- Ultra Low On-Resistance 

- P-Channel MOSFET 

- Surface Mount 

- Available in Tape & Reel 

- Low Gate Charge 

HEXFET[® ] Power MOSFET 

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**----- Start of picture text -----**<br>
VDSS  RDS(on) (max)    ID<br>112m  @  VGS = -10V -3.4A<br>- 40V<br>———— 190m  @  VGS = -4.5V -2.7A<br>**----- End of picture text -----**<br>


- Lead-Free 

- Halogen-Free 

**==> picture [235 x 124] intentionally omitted <==**

**----- Start of picture text -----**<br>
D 1 6 DA<br>D 2 5 D<br>G 3 4 S<br>TSOP-6<br>Top View IRF5803PbF<br>G  D  S<br>Gate  Drain  Source<br>a<br>**----- End of picture text -----**<br>


## **Description** 

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. 

The  TSOP-6  package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where **G D S** printed circuit board space is at a premium. It's unique thermal Gate Drain Source ~~a~~ design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** ~~ee~~ IRF5803PbF TSOP-6 Tape and Reel 3000 IRF5803TRPbF **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|-40|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ -10V|- 3.4|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ -10V|-2.7||
|IDM|Pulsed Drain Current|- 27||
|PD@TA= 25°C|Maximum Power Dissipation|2.0|W|
|PD@TA= 70°C|Maximum Power Dissipation|1.3||
||Linear Derating Factor|16|mW/°C|
|VGS|Gate-to-Source Voltage|± 20||
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



**Thermal Resistance** 

**Symbol Parameter Typ. Max. Units** ~~ee~~ RJA Junction-to-Ambient  ––– 62.5 °C/W 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~|~~rE~~|~~ts~~|~~I~~|~~ts~~|~~Os~~||
|---|---|---|---|---|---|---|
|~~ee~~|**Parameter**<br>~~rE~~|**Min.**<br>~~ts~~|**Typ. Max. Units**<br>~~I~~|**. Max. Units**<br>~~ts~~|**. Max. Units**<br>~~Os~~|**. Max. Units**<br>**Conditions**|
|V(BR)DSS<br>~~ee~~<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~rE ~~<br>~~ee~~|-40<br> ~~ts ~~<br>~~ee~~|–––<br> ~~I~~<br>~~ee~~|–––<br>~~ts ~~<br>~~ee~~|V<br> ~~Os~~<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~ee~~|-0.03 –––<br>~~ee~~|-0.03 –––<br>~~ee~~|V/°C Reference to 25°C<br>~~ee~~|V/°C Reference to 25°C,ID= -1mA<br>~~ee~~|
|RDS(on)<br>~~OE~~<br>~~——~~|Static Drain-to-Source On-Resistance <br>~~OE~~<br>~~a~~|–––<br>~~OE~~|–––<br>~~OE~~|112<br>~~OE~~|m~~~~<br>~~OE~~|VGS= -10V,ID= -3.4A<br>~~OE~~|
|||<br>–––<br>~~OE~~<br>~~a~~|–––<br>~~OE~~<br>~~a~~|190<br>~~OE~~<br>~~a~~||~~~~<br>VGS= -4.5V,ID= -2.7A<br>~~OE~~|
|VGS(th)<br>~~OE~~<br>~~——~~|Gate Threshold Voltage<br>~~OE~~<br>~~a~~|-1.0<br>~~OE~~<br>~~a~~|–––<br>~~OE~~<br>~~a~~|- 3.0<br>~~OE~~<br>~~a~~|V<br>~~OE~~|VDS= VGS,ID= -250µA<br>~~OE~~|
|gfs<br>~~——~~|Forward Trans conductance<br>~~a~~|4.0<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|S|VDS= -10V,ID= -3.4A|
|IDSS<br>~~—— ~~<br>~~EE~~|Drain-to-Source Leakage Current<br> ~~a ~~<br>~~EE~~|–––<br> ~~a~~<br>~~EE~~|–––<br>~~a~~<br>~~EE~~|-10<br>~~a~~<br>~~EE~~|µA<br>~~EE~~|VDS= -32V,VGS= 0V<br>~~EE~~|
|||–––<br>~~EE~~|–––<br>~~EE~~|-25<br>~~EE~~||VDS= -32V,VGS= 0V,TJ= 150°C<br>~~EE~~|
|IGSS <br>~~FE~~|Gate-to-Source Forward Leakage<br>~~FE~~|–––<br>~~FE~~|–––<br>~~FE~~|-100<br>~~FE~~|nA <br>~~FE~~|VGS= -20V<br>~~FE~~|
||Gate-to-Source Reverse Leakage<br>~~FE~~|–––<br>~~FE~~|–––<br>~~FE~~|100<br>~~FE~~||VGS= 20V<br>~~FE~~|
|Qg<br>~~re~~|Total Gate Charge<br>~~re~~|–––<br>~~re~~|25<br>~~re~~|37<br>~~re~~|nC<br>~~re~~|ID= -3.4A<br>VDS= -20V<br>VGS= -10V<br>~~re~~|
|Qgs<br>~~re~~|Gate-to-Source Charge<br>~~re~~|–––<br>~~re~~|4.5<br>~~re~~|6.8<br>~~re~~|||
|Qgd<br>~~re~~<br>~~——————~~|Gate-to-Drain(‘Miller’)Charge<br>~~re~~<br>~~——————~~|–––<br>~~re~~<br>~~——————~~|3.5<br>~~re~~<br>~~——————~~|5.3<br>~~re~~<br>~~——————~~|||
|td(on)<br>~~——————~~<br>~~—ee~~|Turn-On DelayTime<br>~~——————~~<br>~~ee~~|–––<br>~~——————~~<br>~~ee~~|43<br>~~——————~~<br>~~ee~~|–––<br>~~——————~~<br>~~ee~~|ns<br>~~ee~~|VDD= -20V<br>ID= -1.0A<br>RG= 6.0<br>VGS= -10V<br>~~ee~~|
|tr<br>~~——————~~<br>~~—ee~~|Rise Time<br>~~——————~~<br>~~ee~~|–––<br>~~——————~~<br>~~ee~~|550<br>~~——————~~<br>~~ee~~|–––<br>~~——————~~<br>~~ee~~|||
|td(off)<br>~~—ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|88<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~—ee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|50<br>~~ee~~|–––<br>~~ee~~|||
|Ciss<br>~~—ee~~<br>~~**e**~~|Input Capacitance<br>~~ee~~<br>~~**e**~~|–––<br>~~ee~~<br>~~**e**o~~|1110<br>~~ee~~<br>~~o~~|–––<br>~~ee~~<br>~~o~~|pF<br>~~ee~~<br>~~o~~|VGS= 0V<br>VDS= -25V<br>ƒ= 100KHz<br>~~ee~~<br>~~o~~|
|Coss<br>~~**e**~~<br>~~e~~|Output Capacitance<br>~~**e**~~|–––<br>~~**e**o~~|93<br>~~o~~|–––<br>~~o~~|||
|Crss<br>~~**e**~~<br>~~e~~|Reverse Transfer Capacitance<br>~~**e**~~|–––<br>~~**e**o~~|73<br>~~o~~|–––<br>~~o~~|||



## **Notes:** 

 Repetitive rating;  pulse width limited by max. junction temperature. 

>  Pulse width 400µs; duty cycle  2%. 

Surface mounted on 1 in square Cu board 

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**==> picture [537 x 257] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>100<br>VGS<br>VGS<br>TOP         -15V<br>TOP         -15V<br>                -10V<br>                -10V<br>                -4.5V<br>10                 -4.5V - - 3.7V 3.5V 10 - - 3.7V 3.5V<br>                -3.3V<br>To                 -3.3V BOTTOM - 2.7V -3.0V |  ee BOTTOM - 2.7V -3.0V<br>pees jimmlll pee aaiil<br>AO 1 Ag<br>1<br>— Bio<br>-2.7V<br>eet UT 0.1 Ze<br>0.1<br>20µs PULSE WIDTH<br>Cm Tj = 25°C Ky aot TTT 20µs PULSE WIDTH I<br>-2.7V Tj = 125°C<br>Zilles a 0.01 I<br>0.01<br>0.1 1 10 100<br>0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V)<br>-VDS, Drain-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

**Fig. 2** Typical Output Characteristics 

**==> picture [226 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>====== T  = 25  CJ ° ===<br>PERF Reet<br> 10<br>T  = 150  CJ °<br>BEAR<br> 1<br>=f === SS<br>BREESE<br>V      = -25V DS<br>CeCe 20µs PULSE WIDTH<br>0.1<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [240 x 218] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>ID = -3.4A<br>ee TTT<br>1.5<br>AUPE<br>1.0<br>Losec<br>0.5<br>CULEco ETON<br>UT<br>VGS = -10V<br>0.0 LEP<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

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**----- Start of picture text -----**<br>
2000<br>VGS   = 0V,       f = 100 KHZ<br>C iss     = C gs  + C gd ,   C ds<br>SHORTED<br>C = C<br>1500 rss   gd<br>C  = C + C<br>oss   ds  gd<br>Ciss L<br>atta<br>1000 cer |<br>500<br>Coss<br>Crss<br>i<br>0<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**==> picture [225 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
 100<br>a seee<br>—_——_———<br>T  = 150  CJ °<br> 10<br>pf<br>—— ee —<br>ee 4 2 ee<br>T   J = 25  C°<br> 1<br>n/a)<br>a a a<br>pf fe<br>ey ee 2 ee ee ee<br>Py V      = 0 V GS<br>0.1<br>0.4 0.8 1.2 1.6<br>-V     ,Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**==> picture [232 x 631] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>ID = -3.4A<br>| | VDS=-32V ||<br>VDS=-20V<br>10 | | | tt ae<br>PT TT TTT LA<br>8<br>ptt it tt TA<br>Pi tttTA<br>6 COEA<br>PT TT wT<br>ayy<br>4 PE<br>PIAL ET TE<br>BARRE<br>2<br>0 A GERE jit EEEttt ft<br>0 5 10 15 20 25 30<br>Q   , Total Gate Charge (nC)G<br>Fig 6.  Typical Gate Charge vs.<br>      Gate-to-Source Voltage<br>100<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>A<br>10<br>pets z “te :<br>sy TSP st<br>s . ae |<br>100µsec<br>1<br>ss Pe<br>1msec<br>Seas<br>T = 25°C sot<br>T A J  = 150°C <_! 10msec<br>Single Pulse<br>0.1 i :<br>1 10 100<br>-VDS  , Drain-toSource Voltage (V)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
3.5 ACE<br>3.0<br>re a<br>es<br>2.5 a<br>2.0<br>a<br>TENE<br>1.5<br>a<br>1.0 ee<br>a<br>0.5<br>FREE<br>a |<br>0.0<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
 100<br>D = 0.50 SSS Ls<br>0.20<br> 10<br>oan7<br>0.10<br>0.05<br>0.02<br>PDM<br>0.01<br> 1 5 al<br>SINGLE PULSE t1<br>(THERMAL RESPONSE)<br>t2<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>2. Peak T J= P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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**==> picture [248 x 230] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.20<br>0.15<br>0.10 I = -3.4A<br>D<br>0.05<br>0.00<br>4.0 8.0 12.0 16.0<br>-VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 14a.** Basic Gate Charge Waveform 

**==> picture [243 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.40<br>VGS = -4.5V<br>0.30<br>0.20<br>VGS = -10V<br>0.10<br>0.00<br>0.0 5.0 10.0 15.0<br>-ID , Drain Current ( A )<br> )<br>RDS ( on ) , Drain-to-Source On Resistance ( <br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance Vs. Drain Current 

**Fig 14b.** Gate Charge Test Circuit 

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**==> picture [252 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8<br>ID = -250µA<br>2.4<br>2.0<br>1.6<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>-VGS(th) ( V )<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage Vs. Junction Temperature 

**==> picture [255 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
30<br>a<br>25<br>20 NT<br>15<br>a ee<br>10 a<br>5<br>CANUTE TET<br>ON iitiseereee<br>0<br>0.001 0.010 0.100 1.000 10.000 100.000<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 16.** Typical Power Vs. Time 

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## **TSOP-6 Package Outline** 

## **TSOP-6  Part Marking Information** 

## DATE CODE MARKING INSTRUCTIONS 

|||Y =  YEAR||||||||
|---|---|---|---|---|---|---|---|---|---|
|PART NUMBER|TOP<br><LELE<br>~AYWic<br>Bee|CODE<br>W =  WEEK<br>LOT|2003<br>2004<br>2001<br>2002<br>3<br>4<br>1<br>2<br>WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR<br>YEAR<br>Y<br>2013<br>2014<br>2011<br>2012|||03<br>04<br>01<br>02<br>C<br>D<br>A<br>B<br>WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR<br>W<br>WEEK<br>WORK||||
||||2015|2005|5|||||
||||2016|2006|6|||||
|PART NUMBER CODE REFERENCE:|||2017|2007|7|||||
|A =  SI3443DV|O =  IRLTS6342TRPBF||2018<br>2019|2008<br>2009|9<br>8|i]||’||
|B =  IRF5800|P =  IRFTS8342TRPBF||2020|2010|0|24||X||
|C =  IRF5850|R =  IRFTS9342TRPBF|||||26<br>25||Z<br>Y||
|D =  IRF5851|S =  Not applicable|||||||||
|E =  IRF5852|T =  IRLTS2242TRPBF||WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|||||
|F =  IRF5801||||||WORK||||
|G =  IRF5803|||YEAR||Y|WEEK||W||
|H =  IRF5804|||2011|2001|A|27||A||
|I =  IRF5805|||2013<br>2012|2003<br>2002|C<br>B|29<br>28||C<br>B||
|J =  IRF5806|||2014|2004|D|30||D||
|K =  IRF5810|||2015|2005|E|||||
|N =  IRF5802|||2016|2006|F|||||
||||2017|2007|G|||||
|Note: A line above the work week|||2018<br>2019|2008<br>2009|H<br>J|i]||i]||
|(as shown here) indicates Lead-Free.|||2020|2010|K|50||X||
|||||||51||Y||
|||||||52||Z||



WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR 

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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IRF5803PbF 

## **TSOP-6 Tape & Reel Information** 

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

9 

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|<br>IRF5803PbF<br>**Qualification Information**<br>**Qualification Level**<br>Consumer<br>(per JEDEC JESD47F)†<br>**Moisture Sensitivity Level**<br>TSOP-6<br>MSL1<br>(per JEDEC J-STD-020D)†<br>**RoHS Compliant**<br>Yes<br>†<br>Applicable version of JEDEC standard at the time of product release.<br>~~Cinfineon~~<br>~~LLL~~<br>~~_——~~|<br>IRF5803PbF<br>**Qualification Information**<br>**Qualification Level**<br>Consumer<br>(per JEDEC JESD47F)†<br>**Moisture Sensitivity Level**<br>TSOP-6<br>MSL1<br>(per JEDEC J-STD-020D)†<br>**RoHS Compliant**<br>Yes<br>†<br>Applicable version of JEDEC standard at the time of product release.<br>~~Cinfineon~~<br>~~LLL~~<br>~~_——~~|<br>IRF5803PbF<br>**Qualification Information**<br>**Qualification Level**<br>Consumer<br>(per JEDEC JESD47F)†<br>**Moisture Sensitivity Level**<br>TSOP-6<br>MSL1<br>(per JEDEC J-STD-020D)†<br>**RoHS Compliant**<br>Yes<br>†<br>Applicable version of JEDEC standard at the time of product release.<br>~~Cinfineon~~<br>~~LLL~~<br>~~_——~~|
|---|---|---|
|**Revision History**|||
|**Date**<br>**Comments**|||
|<br>Changed datasheet with Infineon logo-all pages|||
|01/27/2017<br><br>Updated package outline and part marking on page 8.|||
|<br>Added disclaimer on lastpage.|||



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** 

With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 

2017-01-27 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF5803TRPBF/power-mosfet-p-channel-40-v-34-a-0112-ohm-tsop)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf5803trpbf/mosfet-p-40v-3-4a-tsop6/dp/1298520RL)
---

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