# Power MOSFET, N Channel, 150 V, 900 mA, 1.2 ohm, TSOP, Surface Mount

![Product image](https://novapart.co/image/farnell:1298505/)

**URL**: https://novapart.co/products/IRF5802TRPBF/power-mosfet-n-channel-150-v-900-ma-12-ohm-tsop
**SKU**: IRF5802TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1110
**Stock**: 50+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:150V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TSOP |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 900mA |
| Drain Source On State Resistance | 1.2ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298505/)

## PD- 954758 IRF5802PbF **SMPS MOSFET** 

**Applications** High frequency DC-DC converters ° 

## **Benefits** 

Low Gate to Drain Charge to Reduce Switching Losses ° Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current Lead-Free Halogen-Free 

HEXFET ® Power MOSFET **VDSS RDS(on) max ID** [3ee: **[150V] 1.2 @VGS = 10V** ee **0.9A** shat TSOP-6 

## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~tt~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 0.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.7 A ~~—————~~ IDM Pulsed Drain Current 7.0 ~~ee~~ PD @TA = 25°C ~~a~~ Power Dissipation 2.0 ~~ae~~ W ~~sh~~ Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V ~~ee~~ dv/dt Peak Diode Recovery dv/dt 7.1 V/ns TJ Operating Junction and -55  to + 150 TSTG Storage Temperature Range °C ~~ee ee~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~pf~~ 

## **Thermal Resistance** 

|**Parameter**<br>RθJA<br>Maximum Junction-to-Ambient<br>~~ee~~<br>~~ee ~~~~**e**e~~<br>~~E~~|**Max.**<br>62.5|**Units**<br>°C/W|
|---|---|---|
|Notes<br>hrough<br>are on page 8<br>®<br>©|||
|www.irf.com||1|



1 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|
|---|---|---|
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>150<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.19    –––     V/°C    Reference to 25°C, ID= 1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>–––<br>1.2<br>Ω<br>VGS= 10V, ID= 0.54A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.5<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>25<br>µA<br>VDS= 150V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 120V, VGS= 0V, TJ= 125°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>VGS= 30V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>nA<br>VGS= -30V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>~~EEE~~<br>~~ae~~<br>~~es~~<br>~~es~~<br>~~®~~<br>~~ss~~<br>®<br>~~ee~~<br>~~SS~~<br>~~|~~TT<br>|~~TT~~|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|||
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>gfs<br>Forward Transconductance<br>0.55<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>4.5<br>6.8                 I<br>Qgs<br>Gate-to-Source Charge<br>–––<br>1.0<br>1.5<br>nC<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>2.4<br>3.6<br>td(on)<br>Turn-On Delay Time<br>–––<br>6.0<br>–––<br>tr<br>Rise Time<br>–––<br>1.6<br>–––<br>td(off)<br>Turn-Off Delay Time<br>–––<br>7.5<br>–––<br>tf<br>Fall Time<br>–––<br>9.2<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>88<br>–––<br>Coss<br>Output Capacitance<br>–––<br>26<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>7.7<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>110<br>–––<br>Coss<br>Output Capacitance<br>–––<br>14<br>–––<br>ns<br>ee<br>~~ee~~<br>~~aa~~<br>~~rere~~<br>~~aa~~<br>~~esee~~<br>~~————~~<br>~~ae~~<br>~~—+3~~<br>~~+ —~~<br>a<br>es<br>es<br>es||**Conditions**<br>VDS= 50V, ID= 0.54A<br>6.8                 ID= 0.54A<br>VDS= 120V<br>VGS= 10V,<br>VDD= 75V<br>ID= 0.54A<br>RG= 6.0Ω<br>VGS= 10V<br>VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>VGS= 0V,  VDS= 120V,  ƒ = 1.0MHz<br>~~®~~|
|Cosseff.<br>Effective Output Capacitance<br>–––<br>3.0<br>–––||VGS= 0V, VDS= 0V to 120V<br>=|



## **Avalanche Characteristics** 

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Parameter Typ. Max. Units<br>EAS Single Pulse Avalanche Energy ––– 9.5 mJ<br>RsGO<br>Of IAR Avalanche Current ––– 0.9 A<br>Diode Characteristics<br> Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 1.8 MOSFET symbol D<br>ne (Body Diode) ee ee showing  the<br>ISM Pulsed Source Current ––– ––– 18 integral reverse G<br>(Body Diode) p-n junction diode. S<br>pf VSD ee Diode Forward Volta eT ge ––– Ha ––– 1.3 V TJ = 25°C, IS = 0.54A, VGS (a  = 0V ®<br>trr Reverse Recovery Time ––– 46 69 ns TJ = 25°C, IF = 0.54A<br>jp<br>ee Qrr Reverse RecoveryCharge ––– 55 83 nC di/dt = 100A/µs ®<br>2 www.irf.com<br>**----- End of picture text -----**<br>


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 100  10<br>VGS VGS<br>TOP 15V TOP 15V<br>12V CO 12V ee<br>10V 10V<br>8.0V 8.0V<br>7.5V 7.5V<br>7.0V 7.0V<br> 10 6.5V 6.5V<br>BOTTOM 6.0V BOTTOM 6.0V<br>e| eHELL S 2ea|.<br>2 ee) fant<br> 1 |) lll  1 eZee<br>6.0V<br>6.0V<br>0.1<br>” A N a nt A<br>|siti 20µs PULSE WIDTHT  = 25J °C 7Ah 20µs PULSE WIDTHT  = 150J °C<br>0.01 0.1<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 10 2.5<br>T  = 25  CJ ° ID = 0.9A<br>== === T U<br>rT S HHH| LC | e T  = 150  CJ ° | | 2.0 PCEELEELEELEEOAEEEvy,<br>1.5<br> 1 Jo ett<br>0 /Ae A<br>1.0<br>= BERDDARED? cONROAOIG<br>—— PEEL PE<br>ee ee ee ee ee eee pra<br>0.5<br>P S V      = 50VDS Eee<br>0.1 6 pitt 8 | 10 20µs PULSE WIDTH12 14 0.0 CEE E ee VGS= 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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**----- Start of picture text -----**<br>
20<br>1000 VGS   = 0V,       f = 1 MHZ ID = 0.54A<br>S et CCrss  iss    = C  = Cgd gs + Cgd,   Cds    SHORTED 16 Po VVVDSDSDS === 120V 75V 30V PT<br>C  = C + C<br>oss   ds  gd<br>= Ciss A ASD<br>100<br>Coss 12<br>| Lo,<br>Crss<br>PE PSSST 8 SEenED44a08<br>10 I N Seen 4euen<br>| | 4 SAREE<br>PT PE ABEEEEEEEEEE<br>1 0<br>0 1 2 3 4 5 6<br>1 10 100 1000<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 10 100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>° 10<br>T  = 150  CJ<br>a ae 70 |<br>eR Pee eee<br> 1 1<br>100µsec<br>1msec<br>T  = 25  CJ ° 0.1 TA = 25°C 10msec<br>I -A PC T il<br>T = 150°C<br>J<br>0.1 PT Ppp EE V      = 0 V GS | 0.01 po Single Pulse BEE (Cr<br>0.4 0.6 0.8 1.0 1.2 1 10 100 1000<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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1.0 pi ft tt td Vos >—-—-v8<br>0.8<br>SSE EEE es oA...<br>PT ANE EE Re | | -<br>0.6 Pi tT AT |<br>ERReeeNEee }} tov<br>≤ 1<br>≤ 0.1 %<br>0.4 Pi tT i tie TN | muss<br>PP Pt tT TT TN °<br>Fig 10a.   Switching Time Test Circuit<br>0.2 Pi ti te te<br>VDS<br>Coeeeceey 90% —<br>0.0<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>Pitt tT | | | tt 10% /\\ OV_\<br>Fig 9.   Maximum Drain Current Vs. VGS ny,<br>Case Temperature td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
 100<br>a a ee ee ee eee ee —__<br>D = 0.50 a<br>0.20<br>a<br> 10<br>0.10<br>0.05<br>= i aeeccee ee eeee e e<br>0.02<br>PDM<br>E 0.01 ST<br> 1<br>T h SINGLE PULSE CC Cor t1<br>(THERMAL RESPONSE)<br>t2<br>es a neat G een ans Notes:<br>a ee ee el 1. Duty factor D = t   / t1 2<br>a li 2. Peak TJ = P DM x  Z thJA + TA<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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2.80 T a 6.00 o T<br>2.40<br>N eer L E<br>4.00<br>2.00 FS V; ft ffaft<br>1.60 ID = 0.54A<br>Sse F \ fT ff | |fe 2.00 C OLE VGS =  10V<br>1.20 P REPEEP<br>P T ER) e p o e<br>RAKE] ff ——<br>PCPEH-<br>0.80<br>0.00<br>6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0<br>0 2 4 6<br>VGS, Gate -to -Source Voltage  (V)<br>ID , Drain Current (A)<br>Fig 12.    Typical On-Resistance Vs. Gate Fig 13.    Typical On-Resistance Vs. Drain<br>Voltage Current<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS VG 25 IDD<br>VGS Pt TOP 0.40A<br>3mA Charge 0.70A<br>ee IG ID 20 | tt BOTTOM 0.90A<br>Current Sampling Resistors<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>)<br>  Ω<br>RDS ( on) , Drain-to-Source On Resistance (<br>**----- End of picture text -----**<br>


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25<br>IDD<br>Pt TOP 0.40A<br>0.70A<br>20 | tt BOTTOM 0.90A<br>15 PXPINtT |EtET |Ettttt<br>NNER<br>10 KNUONE<br>5 PASALTIN, EE<br>SSS<br>0<br>25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>TSS<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14a&b.** Basic Gate Charge Test Circuit and Waveform 

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15V<br>V(BR)DSS<br>_ tp VDS L DRIVER<br>R G D.U.T +<br>IAS - [V][DD]<br>20V<br>I AS ml| ei tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 6 

**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

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Notes: ®® Repetitive rating;  pulse width limited by When mounted on 1 inch square copper board max. junction temperature. ® Coss eff. is a fixed capacitance that gives the same charging time oO) Starting TJ = 25°C, L = 23mH as Coss while VDS is rising from 0 to 80% VDSS RG = 25Ω, IAS = 0.54A. © ISD ≤ 0.54A, di/dt ≤ 89A/µs, VDD ≤ V(BR)DSS, 6) Pulse width ≤ 400µs; duty cycle ≤ 2%. TJ ≤ 150°C 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2010 

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