# Power MOSFET, N Channel, 200 V, 600 mA, 2.2 ohm, TSOP, Surface Mount

![Product image](https://novapart.co/image/farnell:1298504/)

**URL**: https://novapart.co/products/IRF5801TRPBF/power-mosfet-n-channel-200-v-600-ma-22-ohm-tsop
**SKU**: IRF5801TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1520
**Stock**: 50+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TSOP |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 600mA |
| Drain Source On State Resistance | 2.2ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298504/)

PD-95474B 

## IRF5801PbF 

## **SMPS MOSFET** 

## HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters 

## **Benefits** 

Low Gate to Drain Charge to Reduce Switching Losses 

> ° Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free Halogen-Free 

|**VDSS**<br>**200V**<br>a|**VDSS**<br>**200V**<br>a|**VDSS**<br>**200V**<br>a|**VDSS**<br>**200V**<br>a|**VDSS**<br>**200V**<br>a|**VDSS**<br>**200V**<br>a||||**RDS(on) max**<br>**2.2**<br>ee|**RDS(on) max**<br>**2.2**<br>ee|**max**|**ID**<br>**0.6A**<br>ee|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Theata] D<br>~~w~~l?||||||||||l?|l?|l?|
|~~w~~|~~w~~|~~w~~|~~w~~|~~w~~|~~w~~|~~w~~|~~w~~|~~w~~l?|l?|l?|l?|l?|
||||||||||||||
||||||||||||TSOP-6||



|~~TT~~<br>~~——~~|**Parameter**<br>~~TTSO/>T~OAvnuNATATAA0AMYcrc..]{——~~|**Max.**<br>~~SO/>T~OAvnuNATATAA0AMYcrc..]{——~~|**Units**<br>~~SO/>T~OAvnuNATATAA0AMYcrc..]{——~~|
|---|---|---|---|
|ID@ TA= 25°C<br>~~TT~~<br>~~——~~|Continuous Drain Current, VGS@ 10V<br>~~TT SO/>T~OAvnuNATATAA0AMYcrc..]{——~~|0.6<br>~~SO/>T~OAvnuNATATAA0AMYcrc..]{——~~|A<br>~~SO/>T~OAvnuNATATAA0AMYcrc..]{——~~|
|ID@ TA= 70°C<br>~~——~~|Continuous Drain Current, VGS@ 10V|0.48||
|IDM<br>~~eS~~<br>~~TS~~|Pulsed Drain Current<br>~~eS~~<br>~~TS~~|4.8||
|PD@TA= 25°C<br>~~TS~~|Power Dissipation<br>~~TS~~|2.0|W|
|~~TS~~<br>~~TS~~<br>~~Ne~~|Linear DeratingFactor<br>~~TS~~<br>~~TS~~|0.016<br>~~TS~~|W/°C<br>~~TS~~|
|VGS<br>~~Ne~~|Gate-to-Source Voltage|± 30|V|
|dv/dt<br>~~Ne~~<br>~~es~~<br>~~pp~~|Peak Diode Recoverydv/dt<br>~~ee~~<br>~~pp~~|9.6<br>|V/ns<br>|
|TJ<br>TSTG<br>~~Ne~~<br>~~es~~<br>~~pp~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~<br>~~pp~~|-55  to + 150<br>|°C<br>|
|~~es~~<br>~~pp~~|Soldering Temperature, for 10 seconds<br>~~ee~~<br>~~pp~~|300 (1.6mm from case )<br>||



**Thermal Resistance** 

|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJA<br>Junction-to-Ambient<br>–––<br>62.5<br>°C/W<br>~~—~~|
|---|



> Notes ~~®~~ hrough © are on page 8 www.irf.com 1 

1 04/20/10 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~Ee~~<br>~~=~~|**Parameter**<br>~~Ee~~<br>~~=~~|**Min.**<br>~~Ee~~<br>~~=~~|**Typ. **<br>~~Ee~~<br>~~=~~|**Max. **<br>~~Ee~~<br>~~=~~|**Units**<br>~~Ee~~<br>~~=~~|**Conditions**<br>~~Ee~~<br>~~=~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Ee~~<br>~~es~~<br>~~a~~<br>~~=~~|Drain-to-Source Breakdown Voltage<br>~~Ee~~<br>~~es~~<br>~~a~~<br>~~=~~|200<br>~~Ee~~<br>~~es~~<br>~~=~~|–––<br>~~Ee~~<br>~~es~~<br>~~=~~|–––<br>~~Ee~~<br>~~es~~<br>~~=~~|V<br>~~Ee~~<br>~~es~~<br>~~=~~|VGS= 0V, ID= 250µA<br>~~Ee~~<br>~~®~~<br>~~=~~|
|∆V(BR)DSS/∆TJ<br>~~Ee~~<br>~~a~~<br>~~es~~<br>~~=~~|JBreakdown Voltage Temp. Coefficient –––     0.26<br>~~Ee~~<br>~~a~~<br>~~es~~<br>~~=~~|–––     0.26<br>~~Ee~~<br>~~=~~|–––     0.26<br>~~Ee~~<br>~~=~~|–––    V/°C    Reference to 25°C, I<br>~~Ee~~<br>~~=~~|–––    V/°C    Reference to 25°C, I<br>~~Ee~~<br>~~=~~|–––    V/°C    Reference to 25°C, ID= 1mA<br>~~Ee~~<br>~~®~~<br>~~®~~<br>~~=~~|
|RDS(on)<br>~~Ee~~<br>~~a~~<br>~~es~~<br>~~a=~~|Static Drain-to-Source On-Resistance<br>~~Ee~~<br>~~a~~<br>~~es~~<br>~~a=~~|–––<br>~~Ee~~<br>~~=~~|–––<br>~~Ee~~<br>~~=~~|2.2<br>~~Ee~~<br>~~=~~|Ω<br>~~Ee~~<br>~~=~~|VGS= 10V, ID= 0.36A<br>~~Ee~~<br>~~®~~<br>~~®~~<br>~~=~~|
|VGS(th)<br>~~Ee~~<br>~~es~~<br>~~a=~~|Gate Threshold Voltage<br>~~Ee~~<br>~~es~~<br>~~a=~~|3.0<br>~~Ee~~<br>~~=~~|–––<br>~~Ee~~<br>~~=~~|5.5<br>~~Ee~~<br>~~=~~|V<br>~~Ee~~<br>~~=~~|VDS= VGS, ID= 250µA<br>~~Ee~~<br>~~®~~<br>~~=~~|
|IDSS<br>~~Ee~~<br>~~a=~~|Drain-to-Source Leakage Current<br>~~Ee~~<br>~~a=~~<br>~~**|**~~<br>**|**|–––<br>~~Ee~~<br>~~=~~<br>~~**|**~~|–––<br>~~Ee~~<br>~~=~~|25<br>~~Ee~~<br>~~=~~|µA<br>~~Ee~~<br>~~=~~<br>||VDS= 200V, VGS= 0V<br>~~Ee~~<br>~~=~~|
|||–––<br>~~Ee~~<br>~~=~~<br>~~**|**~~<br>**|**|–––<br>~~Ee~~<br>~~=~~<br>||250<br>~~Ee~~<br>~~=~~<br>|||VDS= 160V, VGS= 0V, TJ= 150°C<br>~~Ee~~<br>~~=~~|
|IGSS<br>~~=~~|Gate-to-Source Forward Leakage<br>~~=~~<br>~~**|**~~<br>**|**|–––<br>~~=~~<br>~~**|**~~<br>**|**|–––<br>~~=~~<br>~~|~~|100<br>~~=~~<br>~~|~~|nA<br>~~=~~<br>~~|~~|VGS= 30V<br>~~=~~|
||Gate-to-Source Reverse Leakage<br>~~=~~<br>**|**|–––<br>~~=~~<br>**|**|–––<br>~~=~~<br>~~|~~|-100<br>~~=~~<br>~~|~~||VGS= -30V<br>~~=~~|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>~~=~~<br>ee<br>esee|||||||
|~~=~~|**Parameter**<br>es<br>~~————~~<br>~~=~~|**Min. **<br>es<br>ee<br>|**Typ. **<br>es<br>esee<br>|**Max.**<br>es<br>ee<br>|**Units**<br>es|**Conditions**|
|gfs<br>~~=~~|Forward Transconductance<br>es<br>~~————~~<br>~~=~~|0.44<br>ee<br>es<br>|–––<br>esee<br>es<br>|–––<br>ee<br>es<br>|S<br>es|VDS= 50V, ID= 0.36A|
|Qg<br>~~=~~|Total Gate Charge<br>~~————~~<br>~~=~~|–––<br>|3.9<br>|–––                 I<br>|–––                 I<br>nC<br>~~ae~~|–––                 ID= 0.36A<br>VDS= 160V<br>VGS= 10V<br>~~®~~|
|Qgs<br>~~=~~|Gate-to-Source Charge<br>~~————~~<br>~~=~~|–––<br><br>~~ee~~|0.8<br><br>~~es~~|–––<br>|||
|Qgd<br>~~=~~<br>~~a ———~~|Gate-to-Drain("Miller")Charge<br>~~————~~<br>~~=ee~~<br>~~———~~|–––<br>~~ee~~<br>~~ee~~<br>~~ae~~|2.2<br>~~ee~~<br>~~es~~<br>~~ae~~|–––<br>~~ee~~<br>~~ae~~|||
|td(on)<br>~~=~~<br>~~a ———~~|Turn-On Delay Time<br>~~————~~<br>~~=~~<br>~~ee~~<br>~~———~~|–––<br><br>~~ee~~<br>~~ee~~<br>~~ae~~|6.5<br><br>~~es~~<br>~~ee~~<br>~~ae~~|–––<br><br>~~ee~~<br>~~ae~~|ns<br>~~ae~~|VDD= 100V<br>ID= 0.36A<br>RG= 53Ω<br>VGS= 10V<br>~~®~~|
|tr<br>~~a ———~~|Rise Time<br>~~———~~|–––<br>~~ae~~|8.0<br>~~ae~~|–––<br>~~ae~~|||
|td(off)<br>~~a ———~~<br>~~2~~|Turn-Off Delay Time<br>~~———~~<br>~~2~~<br>~~—$§|j—+~~|–––<br>~~ae~~<br>~~—$§|j—+~~|8.8<br>~~ae~~<br>~~—$§|j—+~~|–––<br>~~ae~~<br>~~—$§|j—+~~|||
|tf<br>~~a ———~~<br>~~2~~|Fall Time<br>~~———~~<br>~~2~~<br>~~—$§|j—+~~|–––<br>~~ae~~<br>~~—$§|j—+~~|19<br>~~ae~~<br>~~—$§|j—+~~|–––<br>~~ae~~<br>~~—$§|j—+~~|||
|Ciss<br>~~a ———~~<br>~~2~~|Input Capacitance<br>~~——— ~~<br>~~2~~<br>~~—$§|j—+~~|–––<br> ~~ae~~<br>~~—$§|j—+~~|88<br>~~ae~~<br>~~—$§|j—+~~|–––<br>~~ae~~<br>~~—$§|j—+~~|pF<br>~~ae~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~®~~|
|Coss<br>~~2~~<br>a<br>ee|Output Capacitance<br>~~2~~<br>~~—$§|j—+~~|–––<br>~~—$§|j—+~~|18<br>~~—$§|j—+~~|–––<br>~~—$§|j—+~~|||
|Crss<br>ee<br>ee|Reverse Transfer Capacitance<br>ee|–––<br>ee|6.3<br>ee|–––<br>ee|||
|Coss<br>ee<br>ee<br>ee|Output Capacitance<br>ee<br>ee|–––<br>ee|102<br>ee|–––<br>ee||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|
|Coss<br>ee<br>ee|Output Capacitance<br>ee<br>ee|–––<br>ee|8.4<br>ee|–––<br>ee||VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz|
|Cosseff.<br>ee|Effective Output Capacitance<br> ee|–––|26|–––||VGS= 0V, VDS= 0V to 160V<br>-|



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Avalanche Characteristics<br>Parameter Typ. Max. Units<br>esa<br>es EAS ee Single Pulse Avalanche Energy ––– 9.9 mJ<br>IAR Avalanche Current ––– 0.6 A<br>es ©<br>Diode Characteristics<br> Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 1.8 MOSFET symbol D<br>ne (Body Diode) ee A showing  the<br>ISM Pulsed Source Current ––– ––– 4.8 integral reverse G<br>rs) (Body Diode) p-n junction diode. S<br>VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.36A, VGS = 0V<br>—_. trr Reverse Recovery Time f+ ––– 45 ++ ––– ns TJ = 25°C, IF = 0.36A ®<br>Qrr Reverse RecoveryCharge ––– 54 ––– nC di/dt = 100A/µs 5<br>PO————<br>2 www.irf.com<br>**----- End of picture text -----**<br>


**Diode Characteristics** 

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10 10<br>VGS VGS<br>TOP         15.0V TOP         15.0V<br>                12.0V                10.0V reee et                 12.0V                10.0V (yya ee ee<br>                 8.0V                  8.0V<br>                 7.5V |e |                  7.5V 1 ae<br>                 7.0V                  7.0V<br>1                  6.5V | A | 1                  6.5V Sell<br>BOTTOM  6.0V BOTTOM  6.0V 6.0V<br>eeeeT eee PH get CEH<br>Ram oi | ee RP oe ee<br>6.0V<br>iL | a) A<br>0.1 >” Alle 0.1 TA<br>ee SF eee eeeet<br>GD 4a ee ee VY _A@MBaaiiil LTT<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>0.01 4mmFl ee Tj = 25°C eHill 0.01 alllA Tj = 150°C e l ll<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 10 3.0<br>ID = 0.6A<br>————— L TT<br>a 2.5 PELLET<br>a + TTT<br>T  = 150  CJ ° mitt 2.0 FLEE EEE a<br> 1 AAI V4 ET) 1.5 P TTELLET TTTTTA<br>AA ASFt} T  = 25  CJ +} +} ° ee 4}}-+ ee  4} 1.0 PELLETPELLTTLLATEEEerrE<br>ee et<br>rT TT ELLE 0.5 eeeI<br>V      = 50VDS<br>0.1 PPP ry Pp 20µs PULSE WIDTH 0.0 P ETTT E EEE ELLEL E VGS LE = 10V<br>6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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160 20<br>VCGS  iss   = C = 0V,     f = 1 MHZgs + Cgd, Cds  SHORTED TI ID = 0.36A VVDSDS== 160V 100V TT<br>Crss    = Cgd  16 VDS= 40V<br>120 C  = C + C<br>oss   ds  gd<br>Ciss 12<br>80<br>Ne + 444<br>8<br>ae Coss<br>40 } | eeceo<br>4<br>Crss<br>SULA TOTCTZT<br>Tiptree PREY<br>0<br>=H 7CEE<br>0<br>1 10 100 1000 0 1 2 3 4 5<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 10  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>PAE  10 tinii<br>T  = 150  CJ ° 10us<br> 1  1<br>Pow Coa 100us<br>T  = 25  CJ ° 1ms<br>FEEGAAAGE 0.1<br>0 EE E<br>10ms<br> T TCJ = 25  C= 150  C° °<br>0.1 TA C) V      = 0 V GS 0.01 L  Single Pulse E S<br> 1  10  100  1000<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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0.6 PA tt Vos ——-A<br>0.5<br>PSK EEE EEE ves Ag ys<br>0.4 -<br>pt ot | PN Vop<br>a as -<br>0.3 Pt tT tT | rT TNE TT Pulse Width ≤ 1  ys<br>≤ 0.1 %<br>Pt tt ET ETN ET Duty Factor<br>0.2<br>Pt tt tet ET TN Fig 10a.   Switching Time Test Circuit<br>0.1 Pt tt tT EE rE TN VDS<br>90%<br>P| | | cd TdT dT dT Ty f<br>0.0<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>PE tT; TT  et 10% / \ /\<br>VGS<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 100<br>a<br>ra D = 0.50 [anise] aa a ae nlss A| LG|<br>0.20 T o ee<br> 10<br>Serene ee a | | |<br>A 0.10 A<br>gn 0.05 oe<br>= rr<br>0.02<br>PDM<br> 1 =, 0.01 RTT LIM LLIN LTT<br>woman e SINGLE PULSE g t1<br>(THERMAL RESPONSE) t2<br>a<br>Notes:<br>1. Duty factor D =t   / t1 2<br>Er E E 2. Peak TJ = P DM x  ZthJC + TC<br>0.1 et<br>0.00001 0.0001 0.001 0.01 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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2.500<br>12.000<br>10.000<br>2.250<br>8.000<br>VGS = 10V<br>2.000<br>6.000<br>pf py C ID = 0.6A<br>4.000<br>1.750<br>2.000<br>1.500<br>0.000 Ty | | ll<br>6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0<br>0 1 2 3 4 5<br>VGS, Gate -to -Source Voltage  (V)<br>ID , Drain Current ( A )<br> )<br>ΩRDS ( on ) , Drain-to-Source On Resistance (<br>)<br>ΩRDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS VG<br>VGS<br>3mA Charge<br>a (ss IG | ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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Fig 14a&b.   Basic Gate Charge Test Circuit<br>and Waveform<br>15V<br>V(BR)DSS<br>tp VDS L DRIVER<br>R G D.U.T +<br>7 IAS - [V][DD]<br>20V<br>I AS — / || aely tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 13.** On-Resistance Vs. Gate Voltage 

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25<br>ID<br>TOP 0.4A<br>0.7A<br>20 |OPft | BOTTOM 0.9A<br>NE<br>ENGR<br>15 PKNEN E L TEE<br>10 NNO<br>5 PTAAINND EL<br>0<br>25 50 75 100 125 150<br>°<br>ASS<br>Starting T  , Junction TemperatureJ (  C)<br>||  ft | RSS<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

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**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

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**Note: For the most current drawing please refer to IR website at:** http://www.irf.com/package/ 

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) Repetitive rating;  pulse width limited by ) When mounted on 1 inch square copper board, t < 10sec. a max. junction temperature. ® Coss eff. is a fixed capacitance that gives the same charging time oO) Starting TJ = 25°C, L = 27mH as Coss while VDS is rising from 0 to 80% VDSS. RG = 25Ω, IAS = 0.36A. © ISD ≤ 0.36A, di/dt ≤ 93A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 6) Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2010 

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