# Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8210667/)

**URL**: https://novapart.co/products/IRF540ZPBF/power-mosfet-n-channel-100-v-36-a-00265-ohm-to
**SKU**: IRF540ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4290
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0265ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 92W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.0265ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8210667/)

## PD - 95531A 

## IRF540ZPbF IRF540ZSPbF IRF540ZLPbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 100V<br>R  = 26.5m Ω<br>DS(on)<br>G<br>ID = 36A<br>S<br>**----- End of picture text -----**<br>


TO-220AB D[2] Pak TO-262 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~a~~|36<br>~~a~~|A<br>~~a~~<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|25<br>~~a~~||
|IDM|Pulsed Drain Current|140||
|PD@TC= 25°C|Power Dissipation<br>~~a~~|92<br>~~a~~|W<br>~~a~~|
||Linear Derating Factor<br>~~a~~<br>~~Le~~|0.61<br>~~a~~<br>~~Le~~|W/°C<br>~~a~~<br>~~Le~~|
|VGS|Gate-to-Source Voltage<br>~~Le~~<br>~~**a**~~|± 20<br>~~Le~~<br>~~**a**~~|V<br>~~Le~~<br>~~**a**~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~**a**~~<br>~~Si~~|83<br>~~**a**~~<br>~~Si~~|mJ<br>~~**a**~~<br>~~Si~~|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value<br>~~Si~~|120<br>~~Si~~||
|IAR|Avalanche Current<br>~~a~~|See Fig.12a, 12b, 15, 16|A|
|EAR|Repetitive Avalanche Energy<br>~~re~~||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~re~~|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>~~re~~|300 (1.6mm from case )||
||Mounting Torque, 6-32 or M3 screw<br>~~re~~<br>~~LS~~|10 lbf in (1.1N m)<br>~~LS~~|~~LS~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|100<br>~~GO~~<br>~~Gs~~|–––<br>~~GO~~<br>~~es~~|–––|V<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~QO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~re~~|–––<br>~~GO~~<br>~~re~~<br>~~Gs~~|0.093<br>~~GO~~<br>~~re~~<br>~~es~~|–––<br>~~re~~|V/°C<br>~~QO~~<br>~~re~~|Reference to 25°C, ID= 1mA<br>~~QO~~<br>~~re~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Pe~~|–––<br>~~Gs ~~<br>~~Pe~~<br>~~Gn~~|21<br> ~~es~~<br>~~Pe~~<br>~~Gn~~|26.5<br>~~Pe~~<br>|mΩ<br>~~Pe~~<br>~~QO~~|VGS= 10V, ID= 22A<br>~~Pe~~<br>~~QO~~|
|VGS(th)|Gate Threshold Voltage<br>~~Pe~~<br>~~Rs~~|2.0<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~Gs~~|–––<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~es~~|4.0<br>~~Pe~~<br>~~Rs~~<br>|V<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|VDS= VGS, ID= 250µA<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|
|gfs|Forward Transconductance<br>~~Rs~~<br>~~re~~|36<br>~~Rs~~<br>~~Gn~~<br>~~re~~<br>~~Gs~~<br>~~renee~~|–––<br>~~Rs~~<br>~~Gn ~~<br>~~re~~<br>~~es~~<br>~~renee~~|–––<br>~~Rs~~<br> <br>~~re~~<br>~~eee~~|V<br>~~Rs~~<br> ~~QO~~<br>~~re~~<br>~~eee~~|VDS= 25V, ID= 22A<br>~~Rs~~<br>~~QO~~<br>~~re~~<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~Gs ~~<br>~~ee~~<br>~~renee~~|–––<br> ~~es~~<br>~~ee~~<br>~~renee~~|20<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee~~|VDS= 100V, VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~renee~~|–––<br>~~ee~~<br>~~renee~~|250<br>~~ee~~<br>~~eee~~||VDS= 100V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee ~~<br>~~a~~<br>|200<br>~~ee~~<br> ~~eee~~<br>~~a~~<br>|nA<br>~~ee~~<br>~~eee~~<br>~~a~~|VGS= 20V<br>~~ee~~<br>~~ee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|TT~~<br>~~ee~~|–––<br>~~a~~<br>~~TT~~<br>~~ee~~|-200<br>~~a~~<br>~~TT~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~|~~<br>~~es~~<br>~~ee~~|–––<br>~~a~~<br>~~|TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|42<br>~~a~~<br>~~TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|63<br>~~a~~<br>~~TT~~<br>~~es~~|nC<br>~~a~~|VGS= 10V<br>ID= 22A<br>VDS= 80V<br>~~a~~<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|9.7<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee ~~<br>~~es~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|ns<br>~~|~~|VDD= 50V<br>ID= 22A<br>RG= 12Ω<br>VGS= 10V<br>~~@~~<br>ee|
|tr|Rise Time<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|51<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~|43<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~<br>~~———+-H~~|–––<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~———+-H~~|39<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~———+-H~~|–––<br>~~es~~<br>~~———+-H~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~———+-H~~|–––<br>~~es~~<br>~~a~~<br>~~———+-H~~|4.5<br>~~es~~<br>~~a~~<br>~~———+-H~~|–––<br>~~es~~<br>~~———+-H~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>ee|
|LS|Internal Source Inductance<br>~~es~~<br>~~———+-H~~|–––<br>~~es~~<br>~~a~~<br>~~———+-H~~<br>~~ee~~|7.5<br>~~es~~<br>~~a~~<br>~~———+-H~~<br>~~ee~~|–––<br>~~es~~<br>~~———+-H~~|||
|Ciss|Input Capacitance<br>~~———+-H~~<br>~~es~~|–––<br>~~———+-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1770<br>~~———+-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~———+-H~~<br>~~es~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|180<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|730<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~Ge~~|110<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~Ge~~|–––<br>~~es~~||VGS= 0V,  VDS= 80V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~Ge~~|170<br>~~ee~~<br>~~Ge~~|–––||VGS= 0V, VDS= 0V to 80V<br>~~@~~|



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V7.0V EE 8.0V7.0V a0<br>6.0V 6.0V<br>100 5.5V 100 5.5V<br>5.0V 5.0V<br>bi BOTTOM y 4.5V y Tl eri BOTTOM 4.5V EHH<br>| | P N rr 4.5V A<br>10 10<br>4.5V<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH<br>amSrlimG Tj = 25°C I ASra Tj = 175°C yi I<br>1 1<br>0.1 1 10 100 0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 80<br>TJ = 175°CJ = 175°C= 175°C<br>T ee SS O T —<br>60<br>100 | | | | a<br>T = 175°C<br>— J  =<br>40<br>ee a ee ee ee A<br>TJ = 25°CJ = 25°C= 25°C<br>10<br>A<br>TJ = 25°C 20<br>Ee a eee r eee VDS = 25V oa4 | VDS = 10VDS = 10V= 10V<br>60µs PULSE WIDTH<br>Ji 380µs PULSE WIDTH<br>1<br>0 V/<br>4.0 pt 5.0 6.0 | 7.0 VY<br>0 10 20 30 40 50<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


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80<br>TJ = 175°CJ = 175°C= 175°C<br>O T —<br>60 a<br>40<br>A<br>TJ = 25°CJ = 25°C= 25°C<br>20<br>|<br>VDS = 10VDS = 10V= 10V<br>380µs PULSE WIDTH<br>0 V/<br>VY<br>0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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3000 20<br>VGS   = 0V,       f = 1 MHZ I = 22A<br>D<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>2500 CCrss   = C= C gd + C 16 VVDS= 50VDS= 80V<br>T oss   ds  gd es VDS= 20V<br>2000<br>e Ciss ae e Sy ta<br>12<br>1500<br>A e | a sa<br>8<br>1000 P U FRpg<br>eer<br>4<br>a ee ee<br>500 Coss a eea FOR TEST CIRCUIT<br>Crss SEE FIGURE 13<br>so 0 =Zo<br>0<br>1 10 100 0 10 20 30 40 50 60<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>T = 175°C<br>J<br>10.0 10<br>1.0 W e 1 P e e 100µsec<br>T = 25°C<br>J  Tc = 25°C 1msec<br>VGS = 0V Tj = 175°C 10msec<br>ri oe Single Pulse c t<br>0.1 0.1 To<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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40 3.0<br>ID = 22A<br>VGS = 10V<br>T OA F O<br>2.5<br>30<br>P SE ,<br>T resor 2.0 L EE<br>20<br>S S TITEL<br>1.5<br>P OPE IN Vv<br>10<br>P UENTE EP<br>1.0<br>0 P EELEOPEEELN 0.5 rLhT TTT TT<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.05<br>0.02<br>0.01<br>0.01 SINGLE PULSE<br>( THERMAL RESPONSE )<br>0.001 | TET EE EEE EE EEE EE EEE EET<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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180<br>15V<br>160 P ETTT ID<br>TOP         8.3A<br>VDS L DRIVER 140 14A<br>BOTTOM 20A<br>PN EE<br>120<br>RG D.U.T +<br>" - [V][DD] 100 N ONPEEET EL<br>IAS A<br>rit 20VVGS t e p 0.01 Ω 80 NR NSONE<br>B ANNER<br>Wy 60 TET EE ET<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS 40 Pt ASN TET<br>tp 20<br>_ P t tTTASS<br>0 PET ET TT PASS<br>25 50 75 100 125 150 175<br>/ | Starting TJ , Junction Temperature (°C)<br>|<br>IAS 7an ET<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br>QG<br>10V. [,]<br>QGS QGD 4.0<br>VG 3.5<br>O E<br>ID = 250µA<br>Charge 3.0<br>Fig 13a.   Basic Gate Charge Waveform er<br>2.5 T TLEENEE<br>2.0<br>L L TLEN<br>VCC<br>DUT<br>0 nr | 1.5 T TET TELLT<br>1K -75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>cg 5, | |<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>10<br>0.05<br>0 .10<br>1<br>0.1 a a ee ee lll<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>100 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>90 T n<br>80 N L| BOTTOM   10% Duty CycleID = 20A 1. Avalanche failures assumption:  Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>70     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>60 P E [INSET] EE Ey   not exceeded.<br>P EEN 3. Equation below based on circuit and waveforms shown in<br>50<br>  Figures 12a, 12b.<br>40 P TET NYTTT EETETT TT 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>30 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>p tt ING Tt<br>    voltage increase during avalanche).<br>20 E RRERENE 6. Iav = Allowable avalanche current.<br>10 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>P Et TT TT<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 P ET TET TTYNETNO   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TeaR 019<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## TO-220AB package is not recommended for Surface Mount Application 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/** 

**2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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THIS IS AN IRF530S WITHLOT CODE 8024 INTERNATIONAL — PART NUMBER<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 0021<br>80 24 DATE CODE<br>ASSEMBLY WU YEAR 0 =  2000<br>assembly line position LOT CODE 7 ) \? WEEK 02<br>“Lead - Free” U u LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL i<br>RECTIFIER F530S<br>LOGO TER80 P002424 P =  DESIGNATES LEAD - FREEDATE CODEPRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE Y 1U u YT;q YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

**==> picture [223 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS  AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>Note: "P" in assembly lineASS EMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO cSTEAR17IRL3103L.719C89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL CY<br>RECTIFIER IRLS103L<br>LOGO TEIRP7IGA<br>17 89 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY S ITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

11 

## D[2] Pak Tape & Reel Infomation 

**==> picture [375 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) ; 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>t TT 0.342 (.0135)<br>FEED DIRECTION = 1.85 (.073)1.65 (.065) 11.60 (.457)11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069) T<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>|<br>30.40 (1.197)<br>NOTES :       MAX.<br>; 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961)3 te 4<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.46mH RG = 25 Ω , IAS = 20A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is only applied to TO-220AB pakcage. This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

## **TO-220AB package is not recommended for Surface Mount Application.** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

12 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF540ZPBF/power-mosfet-n-channel-100-v-36-a-00265-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irf540zpbf/mosfet-n-100v-36a-to-220/dp/8210667)
---

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