# Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-262, Through Hole

![Product image](https://novapart.co/image/farnell:2839479/)

**URL**: https://novapart.co/products/IRF540ZLPBF/power-mosfet-n-channel-100-v-36-a-00265-ohm-to-262
**SKU**: IRF540ZLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4960
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; ; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 92W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-262 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.0265ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839479/)

## PD - 95531A 

## IRF540ZPbF IRF540ZSPbF IRF540ZLPbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 100V<br>R  = 26.5m Ω<br>DS(on)<br>G<br>ID = 36A<br>S<br>**----- End of picture text -----**<br>


TO-220AB D[2] Pak TO-262 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~a~~|36<br>~~a~~|A<br>~~a~~<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|25<br>~~a~~||
|IDM|Pulsed Drain Current|140||
|PD@TC= 25°C|Power Dissipation<br>~~a~~|92<br>~~a~~|W<br>~~a~~|
||Linear Derating Factor<br>~~a~~<br>~~Le~~|0.61<br>~~a~~<br>~~Le~~|W/°C<br>~~a~~<br>~~Le~~|
|VGS|Gate-to-Source Voltage<br>~~Le~~<br>~~**a**~~|± 20<br>~~Le~~<br>~~**a**~~|V<br>~~Le~~<br>~~**a**~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~**a**~~<br>~~Si~~|83<br>~~**a**~~<br>~~Si~~|mJ<br>~~**a**~~<br>~~Si~~|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value<br>~~Si~~|120<br>~~Si~~||
|IAR|Avalanche Current<br>~~a~~|See Fig.12a, 12b, 15, 16|A|
|EAR|Repetitive Avalanche Energy<br>~~re~~||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~re~~|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>~~re~~|300 (1.6mm from case )||
||Mounting Torque, 6-32 or M3 screw<br>~~re~~<br>~~LS~~|10 lbf in (1.1N m)<br>~~LS~~|~~LS~~|



www.irf.com 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|100<br>~~GO~~<br>~~Gs~~|–––<br>~~GO~~<br>~~es~~|–––|V<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~QO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~re~~|–––<br>~~GO~~<br>~~re~~<br>~~Gs~~|0.093<br>~~GO~~<br>~~re~~<br>~~es~~|–––<br>~~re~~|V/°C<br>~~QO~~<br>~~re~~|Reference to 25°C, ID= 1mA<br>~~QO~~<br>~~re~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Pe~~|–––<br>~~Gs ~~<br>~~Pe~~<br>~~Gn~~|21<br> ~~es~~<br>~~Pe~~<br>~~Gn~~|26.5<br>~~Pe~~<br>|mΩ<br>~~Pe~~<br>~~QO~~|VGS= 10V, ID= 22A<br>~~Pe~~<br>~~QO~~|
|VGS(th)|Gate Threshold Voltage<br>~~Pe~~<br>~~Rs~~|2.0<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~Gs~~|–––<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~es~~|4.0<br>~~Pe~~<br>~~Rs~~<br>|V<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|VDS= VGS, ID= 250µA<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|
|gfs|Forward Transconductance<br>~~Rs~~<br>~~re~~|36<br>~~Rs~~<br>~~Gn~~<br>~~re~~<br>~~Gs~~<br>~~renee~~|–––<br>~~Rs~~<br>~~Gn ~~<br>~~re~~<br>~~es~~<br>~~renee~~|–––<br>~~Rs~~<br> <br>~~re~~<br>~~eee~~|V<br>~~Rs~~<br> ~~QO~~<br>~~re~~<br>~~eee~~|VDS= 25V, ID= 22A<br>~~Rs~~<br>~~QO~~<br>~~re~~<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~Gs ~~<br>~~ee~~<br>~~renee~~|–––<br> ~~es~~<br>~~ee~~<br>~~renee~~|20<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee~~|VDS= 100V, VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~renee~~|–––<br>~~ee~~<br>~~renee~~|250<br>~~ee~~<br>~~eee~~||VDS= 100V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee ~~<br>~~a~~<br>|200<br>~~ee~~<br> ~~eee~~<br>~~a~~<br>|nA<br>~~ee~~<br>~~eee~~<br>~~a~~|VGS= 20V<br>~~ee~~<br>~~ee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|TT~~<br>~~ee~~|–––<br>~~a~~<br>~~TT~~<br>~~ee~~|-200<br>~~a~~<br>~~TT~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~|~~<br>~~es~~<br>~~ee~~|–––<br>~~a~~<br>~~|TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|42<br>~~a~~<br>~~TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|63<br>~~a~~<br>~~TT~~<br>~~es~~|nC<br>~~a~~|VGS= 10V<br>ID= 22A<br>VDS= 80V<br>~~a~~<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|9.7<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee ~~<br>~~es~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|ns<br>~~|~~|VDD= 50V<br>ID= 22A<br>RG= 12Ω<br>VGS= 10V<br>~~@~~<br>ee|
|tr|Rise Time<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|51<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~|43<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~<br>~~———+-H~~|–––<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~———+-H~~|39<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~———+-H~~|–––<br>~~es~~<br>~~———+-H~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~———+-H~~|–––<br>~~es~~<br>~~a~~<br>~~———+-H~~|4.5<br>~~es~~<br>~~a~~<br>~~———+-H~~|–––<br>~~es~~<br>~~———+-H~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>ee|
|LS|Internal Source Inductance<br>~~es~~<br>~~———+-H~~|–––<br>~~es~~<br>~~a~~<br>~~———+-H~~<br>~~ee~~|7.5<br>~~es~~<br>~~a~~<br>~~———+-H~~<br>~~ee~~|–––<br>~~es~~<br>~~———+-H~~|||
|Ciss|Input Capacitance<br>~~———+-H~~<br>~~es~~|–––<br>~~———+-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1770<br>~~———+-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~———+-H~~<br>~~es~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|180<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|730<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~Ge~~|110<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~Ge~~|–––<br>~~es~~||VGS= 0V,  VDS= 80V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~Ge~~|170<br>~~ee~~<br>~~Ge~~|–––||VGS= 0V, VDS= 0V to 80V<br>~~@~~|



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V7.0V EE 8.0V7.0V a0<br>6.0V 6.0V<br>100 5.5V 100 5.5V<br>5.0V 5.0V<br>bi BOTTOM y 4.5V y Tl eri BOTTOM 4.5V EHH<br>| | P N rr 4.5V A<br>10 10<br>4.5V<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH<br>amSrlimG Tj = 25°C I ASra Tj = 175°C yi I<br>1 1<br>0.1 1 10 100 0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 80<br>TJ = 175°CJ = 175°C= 175°C<br>T ee SS O T —<br>60<br>100 | | | | a<br>T = 175°C<br>— J  =<br>40<br>ee a ee ee ee A<br>TJ = 25°CJ = 25°C= 25°C<br>10<br>A<br>TJ = 25°C 20<br>Ee a eee r eee VDS = 25V oa4 | VDS = 10VDS = 10V= 10V<br>60µs PULSE WIDTH<br>Ji 380µs PULSE WIDTH<br>1<br>0 V/<br>4.0 pt 5.0 6.0 | 7.0 VY<br>0 10 20 30 40 50<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


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80<br>TJ = 175°CJ = 175°C= 175°C<br>O T —<br>60 a<br>40<br>A<br>TJ = 25°CJ = 25°C= 25°C<br>20<br>|<br>VDS = 10VDS = 10V= 10V<br>380µs PULSE WIDTH<br>0 V/<br>VY<br>0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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3000 20<br>VGS   = 0V,       f = 1 MHZ I = 22A<br>D<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>2500 CCrss   = C= C gd + C 16 VVDS= 50VDS= 80V<br>T oss   ds  gd es VDS= 20V<br>2000<br>e Ciss ae e Sy ta<br>12<br>1500<br>A e | a sa<br>8<br>1000 P U FRpg<br>eer<br>4<br>a ee ee<br>500 Coss a eea FOR TEST CIRCUIT<br>Crss SEE FIGURE 13<br>so 0 =Zo<br>0<br>1 10 100 0 10 20 30 40 50 60<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>T = 175°C<br>J<br>10.0 10<br>1.0 W e 1 P e e 100µsec<br>T = 25°C<br>J  Tc = 25°C 1msec<br>VGS = 0V Tj = 175°C 10msec<br>ri oe Single Pulse c t<br>0.1 0.1 To<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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40 3.0<br>ID = 22A<br>VGS = 10V<br>T OA F O<br>2.5<br>30<br>P SE ,<br>T resor 2.0 L EE<br>20<br>S S TITEL<br>1.5<br>P OPE IN Vv<br>10<br>P UENTE EP<br>1.0<br>0 P EELEOPEEELN 0.5 rLhT TTT TT<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.05<br>0.02<br>0.01<br>0.01 SINGLE PULSE<br>( THERMAL RESPONSE )<br>0.001 | TET EE EEE EE EEE EE EEE EET<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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180<br>15V<br>160 P ETTT ID<br>TOP         8.3A<br>VDS L DRIVER 140 14A<br>BOTTOM 20A<br>PN EE<br>120<br>RG D.U.T +<br>" - [V][DD] 100 N ONPEEET EL<br>IAS A<br>rit 20VVGS t e p 0.01 Ω 80 NR NSONE<br>B ANNER<br>Wy 60 TET EE ET<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS 40 Pt ASN TET<br>tp 20<br>_ P t tTTASS<br>0 PET ET TT PASS<br>25 50 75 100 125 150 175<br>/ | Starting TJ , Junction Temperature (°C)<br>|<br>IAS 7an ET<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br>QG<br>10V. [,]<br>QGS QGD 4.0<br>VG 3.5<br>O E<br>ID = 250µA<br>Charge 3.0<br>Fig 13a.   Basic Gate Charge Waveform er<br>2.5 T TLEENEE<br>2.0<br>L L TLEN<br>VCC<br>DUT<br>0 nr | 1.5 T TET TELLT<br>1K -75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>cg 5, | |<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>10<br>0.05<br>0 .10<br>1<br>0.1 a a ee ee lll<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>100 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>90 T n<br>80 N L| BOTTOM   10% Duty CycleID = 20A 1. Avalanche failures assumption:  Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>70     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>60 P E [INSET] EE Ey   not exceeded.<br>P EEN 3. Equation below based on circuit and waveforms shown in<br>50<br>  Figures 12a, 12b.<br>40 P TET NYTTT EETETT TT 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>30 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>p tt ING Tt<br>    voltage increase during avalanche).<br>20 E RRERENE 6. Iav = Allowable avalanche current.<br>10 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>P Et TT TT<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 P ET TET TTYNETNO   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

## www.irf.com 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TeaR 019<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## TO-220AB package is not recommended for Surface Mount Application 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/** 

**2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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THIS IS AN IRF530S WITHLOT CODE 8024 INTERNATIONAL — PART NUMBER<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 0021<br>80 24 DATE CODE<br>ASSEMBLY WU YEAR 0 =  2000<br>assembly line position LOT CODE 7 ) \? WEEK 02<br>“Lead - Free” U u LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL i<br>RECTIFIER F530S<br>LOGO TER80 P002424 P =  DESIGNATES LEAD - FREEDATE CODEPRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE Y 1U u YT;q YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

**==> picture [223 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS  AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>Note: "P" in assembly lineASS EMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO cSTEAR17IRL3103L.719C89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL CY<br>RECTIFIER IRLS103L<br>LOGO TEIRP7IGA<br>17 89 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY S ITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

11 

## D[2] Pak Tape & Reel Infomation 

**==> picture [375 x 248] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) ; 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>t TT 0.342 (.0135)<br>FEED DIRECTION = 1.85 (.073)1.65 (.065) 11.60 (.457)11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069) T<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>|<br>30.40 (1.197)<br>NOTES :       MAX.<br>; 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961)3 te 4<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.46mH RG = 25 Ω , IAS = 20A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is only applied to TO-220AB pakcage. This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

## **TO-220AB package is not recommended for Surface Mount Application.** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

12 



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- [Supplier page](https://es.farnell.com/infineon/irf540zlpbf/mosfet-n-ch-100v-36a-to-262/dp/2839479)
---

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