# Power MOSFET, N Channel, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8648301/)

**URL**: https://novapart.co/products/IRF540NSPBF/power-mosfet-n-channel-100-v-33-a-0044-ohm-to-263
**SKU**: IRF540NSPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4650
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 140W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.044ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 33A |
| Drain Source On State Resistance | 0.044ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648301/)

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## IRF540NSPbF IRF540NLPbF HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 100V<br>R  = 44mΩ<br>DS(on)<br>G<br>ID = 33A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for lowprofile applications. 

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D [2] Pak TO-262<br>IRF540NSPbF IRF540NLPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>ee|**Absolute Maximum Ratings**<br>|||
|---|---|---|---|
|ee<br>~~—————~~|**Parameter**<br><br>~~—————~~|**Max.**<br><br>~~i~~|**Units**<br>~~i~~|
|ID@ TC= 25°C<br>ee©<br>~~—————~~|Continuous Drain Current, VGS@ 10V<br>©<br>~~—————~~|33<br>©<br>~~i~~|A<br>~~i~~|
|ID@ TC= 100°C<br>~~—————~~<br>~~—yp~~|Continuous Drain Current, VGS@ 10V<br>~~—————~~<br>~~yp~~<br>~~O~~<br>~~U~~<br>~~dt~~|23<br>~~i~~<br>~~dt~~||
|IDM<br>~~—————~~<br>~~—yp~~|Pulsed Drain Current<br>~~—————~~<br>~~yp~~<br>~~O~~<br>~~U~~<br>~~dt~~|110<br>~~i~~<br>~~dt~~<br>~~yt~~||
|PD@TC= 25°C<br>~~—————~~<br>~~—yp~~|Power Dissipation<br>~~—————~~<br>~~yp~~<br>~~O~~<br>~~U~~<br>~~dt~~<br>~~sv~~|130<br>~~i~~<br>~~dt~~<br>~~sv~~<br>~~yt~~|W<br>~~i~~<br>~~sv~~|
|~~— yp~~<br>~~a~~|Linear DeratingFactor<br>~~yp~~<br>~~O~~<br>~~U~~<br>~~dt~~<br>~~a~~|0.87<br>~~dt~~<br>~~yt~~<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|16<br>~~a~~|A<br>~~a~~|
|EAR<br>~~a~~<br>~~a~~<br>~~OO~~|Repetitive Avalanche Energy<br>~~a~~<br>~~>~~<br>~~OO~~|13<br>~~a~~<br>~~eee~~|mJ<br>~~a~~<br>~~eee~~|
|dv/dt<br>~~OO~~|Peak Diode Recoverydv/dt<br>~~OO~~|7.0<br>~~eee~~|V/ns<br>~~eee~~|
|TJ<br>TSTG<br>~~OO~~<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~OO~~<br>~~pf~~|-55  to + 175<br>~~eee~~|°C<br>~~eee~~<br>—ox”F7|
|~~pf~~|SolderingTemperature, for 10 seconds<br>~~pf~~|300(1.6mm from case)||
|~~To~~|Mounting torque, 6-32 or M3 srew<br>~~To~~|10 lbf•in (1.1N•m)<br>~~To~~|~~To~~<br>—ox”F7|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.15|°C/W|
|RθJA|Junction-to-Ambient(PCB mount)**|–––|40||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es|**Max. **<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|100<br>~~ee~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ss~~|–––<br>~~ss~~|0.12|–––|V/°C|Reference to 25°C, ID= 1mA<br>O|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~nn~~|–––<br>~~nn~~|–––|44|mΩ|VGS= 10V, ID= 16A<br>®|
|VGS(th)<br>~~Sn~~|Gate Threshold Voltage<br>~~en~~<br>~~Sn~~|2.0<br>~~en~~<br>~~Sn~~|–––<br>~~en~~<br>~~Sn~~|4.0<br>~~en~~<br>~~Sn~~|V<br>~~en~~<br>~~Sn~~|VDS= VGS, ID= 250µA<br>~~eo)~~|
|gfs<br>~~Sn~~|Forward Transconductance<br>~~Sn~~|21<br>~~Sn~~|–––<br>~~Sn~~|–––<br>~~Sn~~|S<br>~~Sn~~|VDS= 50V, ID= 16A<br>~~eo)~~|
|IDSS<br>~~Sn~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~a~~|–––<br>~~Sn~~<br>~~a~~|–––<br>~~Sn~~<br>~~a~~|25<br>~~Sn~~<br>~~a~~|µA<br>~~Sn~~<br>~~a~~|VDS= 100V, VGS= 0V<br>~~eo)~~<br>~~a~~|
|||–––<br>~~Sn~~<br>~~a~~|–––<br>~~Sn~~<br>~~a~~|250<br>~~Sn~~<br>~~a~~||VDS= 80V, VGS= 0V, TJ= 150°C<br>~~eo)~~<br>~~a~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VGS= 20V<br>~~a~~|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|Qg<br>ee|Total Gate Charge|–––|–––|71|nC|ID= 16A<br>VDS= 80V<br>VGS= 10V, See Fig. 6 and 13<br>~~XO)~~|
|Qgs<br>ee<br>~~Se~~|Gate-to-Source Charge|–––|–––|14|||
|Qgd<br>ee<br>~~Se~~<br>~~a~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~a~~|–––|–––|21|||
|td(on)<br>~~Se~~<br>~~a~~<br>~~ee~~|Turn-On Delay Time<br>~~a~~|–––|11|–––|ns|VDD= 50V<br>ID= 16A<br>RG= 5.1Ω<br>VGS= 10V, See Fig. 10<br>~~XO)~~<br>~~©®~~|
|tr<br>~~Se~~<br>~~a~~<br>~~ee~~<br>~~ee~~|Rise Time<br>~~a~~<br>~~es~~|–––<br>~~es~~|35|–––|||
|td(off)<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-Off Delay Time<br>~~a~~<br>~~es~~|–––<br>~~es~~|39|–––|||
|tf<br>~~ee~~<br>~~ee~~|Fall Time<br>~~es~~|–––<br>~~es~~|35|–––|||
|LD<br>~~ee~~<br>~~ee~~<br>~~ee~~|Internal Drain Inductance<br>~~es ~~|–––<br> ~~es~~||–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~©®~~<br>~~(ey~~|
|LS<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~a~~|Internal Source Inductance<br>~~a~~|–––|7.5|–––|||
|Ciss<br>~~ee~~<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~|–––|1960|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~(ey~~<br>~~@~~|
|Coss<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~a~~|–––|250|–––|||
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~©~~|–––<br>~~DK)~~|40<br>~~DK)~~|–––|||
|EAS<br>~~ee~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~©~~|–––<br>~~DK)~~|700<br>~~DK)~~|185|mJ|IAS= 16A, L = 1.5mH<br>~~@~~|



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** IS Continuous Source Current ––– ––– 33 MOSFET symbol D ~~eeee~~ (Body Diode) ~~ee~~ showing  the ISM Pulsed Source Current ––– ––– 110 integral reverse G (Body Diode) p-n junction diode. S ~~**a**~~ VSD Diode Forward Voltage ––– ~~ae)~~ ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A ~~©~~ Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs ~~p++~~ ton ~~ny~~ Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L ~~@@~~ S+LD) 

Notes: ® Repetitive rating;  pulse width limited by © 

Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

© This is a typical value at device destruction and represents operation outside rated limits. 

@ Starting TJ = 25°C, L =1.5mH © RG = 25Ω, IAS = 16A. (See Figure 12) @ (©) ISD ≤ 16A , di/d t ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

This is a calculated value limited to TJ = 175°C . 

Uses IRF540N data and test conditions. 

**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100 a ie  100 a it<br>all | eporen | |<br>2 |<br>4.5V<br> 10 Zo n 4.5V ||  10 Sr erty CUM<br>FO SF i<br> 1 T oc 20µs PULSE WIDTHT  = 25J °C  1 A y | 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 3.5<br>———— T ID = 33A _T<br>a 3.0 PCECCCEEEEEEEE<br>a EEL<br>a P T<br>2.5<br>Pt ty | eetT eT ty tf PEELETO<br>T  = 25  CJ ° 2.0<br> 100 Pry Ey | POCO ve<br>————a 1.5 EEEECECECECCEe LEE<br>=== T  = 175  CJ ° | Va<br>a ee COTTA<br>1.0<br>rT ae _ TTT TT tT tT |<br>Yr rrereyey OTe<br>rvawtt ttt] tl 0.5 Pear<br> 10 VET yp  oo V      = 50V20µs PULSE WIDTHDS 0.0 PCEFEETEh VGS TTT] = 10V<br>4.0 V     , Gate-to-Source Voltage (V)5.0GS 6.0 7.0 8.0 9.0 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100 120(  C)° 140 160 180<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3000 20<br>VGS = 0V, f = 1MHz IDD = 16A<br>2500 _—-St CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 16 Td Pt [| VVVDSDSDSDSDSDSDSDSDS === 80V 50V 20V 20V 50V 20V 80V 50V 20V TT||<br>2000 Ciss<br>eS pf yw |<br>12<br>| fA;<br>1500<br>SSO 8 HEE AE<br>1000 SS TT<br>Se OYA OT<br>Coss 4<br>500 DNee | alll TIAPTTTPTTTTT<br>Crss FOR TEST CIRCUIT<br>0 P SR STCTT 0 Vi[|[| | a SEE FIGURE       1313<br> 1  10  100 0 20 40 60<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)DS(on)(on)<br> 100 100<br>jf tt ft 0<br>T  = 175  CJ °<br> 10 10 100µsec<br>T  = 25  CJ ° 1msec<br> 1 SA p p 1 S E E<br>TA = 25°CA = 25°C= 25°C 10msec<br>T = 175°C<br>J<br>fe V      = 0 V GS Single Pulse etrs meceeeeeie: Maree<br>0.1 Lo iy | tf tT 0.1 1<br>0.2 0.6 1.0 1.4 1.8<br>V     ,Source-to-Drain Voltage (V)SD 1 10 100<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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20<br>IDD = 16A<br>Td<br>16 Pt [| VDSDSDSVVDSDSDSVVVDSDSDSDSDSDSDSDSDS = 80V 50V 20V== 80V 50V 20V=== 80V 50V 20V 20V 50V 20V 80V 50V 20V TT||<br>pf yw |<br>12<br>fA;<br>8 HEE AE<br>TT<br>OYA OT<br>4<br>TIAPTTTPTTTTT<br>FOR TEST CIRCUIT<br>0 Vi[|[| | a SEE FIGURE       1313<br>0 20 40 60 80<br>Q   , Total Gate Charge (nC)GG<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)DS(on)(on)<br>100<br>0<br>100µsec<br>10<br>1msec<br>1 S E E<br>TA = 25°CA = 25°C= 25°C 10msec<br>T = 175°C<br>J<br>etrs meceeeeeie: Maree<br>Single Pulse<br>0.1 1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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35 Rt tT | | | | | ET tT Vos Re.<br>NER EEE<br>30 a Ves aut<br>25 Pt tT Ne TT Re —_<br>-<br>Ft ot} | TdIN TT tt<br>20 EeeBae ee eeNeeeaNeeee )+ Vas ≤ 1<br>15 eRe ee eeeNee Duty ≤ 0.1 %<br>P| Factor<br>10 fF | tT| dT| r T dr T dPrT rd T  dE|  TN| IN| 1<br>P|] | it tt tt tt tN Fig 10a. Switching Time Test Circuit<br>5 P| |} TdT dT TT | tA VDS<br>P| | | | dT cd TdT hE | TY 90% jf<br>0 Pt tt tT TT TTT \<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>10%<br>/\ \<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 10<br>Peaeeet eee el<br> 1 dee<br>D = 0.50<br>S S<br>0.20 MSs _a<br>0.10 PDM<br>0.1 0.05 rr t1<br>goae<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>ae Notes:<br>1. Duty factor D = t   / t1 2<br>er 2. Peak TJ = P DM x  Z thJC + TC<br>0.01 | ll<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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400<br>15V ID<br>TOP 6.5A<br>11.3A<br>BOTTOM 16A<br>VDS L DRIVER 300 SP NPE<br>RG D.U.T +<br>IAS - [V][DD] A 200<br>JL SENSE EEEEEE<br>20V<br>tp 0.01Ω<br>ah RX fe<br>100<br>Fig 12a. Unclamped Inductive Test Circuit p SANA LT<br>V(BR)DSS PSS<br><> tp 0 Pt ft |SS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>/<br>/ y |\ Fig 12c. MaximumVs. Drain AvalaCurre n tche Energy<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF !<br>QG .3µF<br>BO | +<br>Ves CT fF D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>—_ = |<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   -<br>@ •   D.U.T. - Device Under Test<br>> Isp controlled by Duty Factor "D"<br>*Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee cee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  80 2 4 IN T E R N AT ION AL oY<br>AS S E M B L E D  ON  W W  0 2, 20 00 R E CT IF IE R F 5 30 S<br>IN  T H E  AS S E M B L Y  L IN E  "L " L OGO TOR 0021<br>80 24 D AT E  COD E<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E MB L Y V J U 7 U‘f U YE AR  0 =W E E K  02  20 00<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL —<br>R E CT IF IE R F 530S<br>L OGO TeaRPoo2A<br>80 24 D AT E  CO D E<br>AS S E MB L Y LJ uU P  =  D E SP R O D U CT  (O P T ION AL )IGN AT E S  L E AD -F R E E<br>L OT  COD E 7,U 7,U Y E AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y  S IT E  CO D E<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

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IGBT<br>1-  GAT __ E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO a TORIRLS103L719C<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRL3103L<br>LOGO TOaRP7IIA<br>DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>al:<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>= 10.90 (.429)10.70 (.421) te 1.25 (.049) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>i aaF<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) I a 4<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


**==> picture [119 x 5] intentionally omitted <==**

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4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf540nspbf/mosfet-n-100v-33a-d2-pak/dp/8648301)
---

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