# Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648263/)

**URL**: https://novapart.co/products/IRF530NPBF/power-mosfet-n-channel-100-v-17-a-009-ohm-to-220ab
**SKU**: IRF530NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3710
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 63W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.09ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648263/)

PD - 94962 

## IRF530NPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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**----- Start of picture text -----**<br>
D<br>VDSS = 100V<br>R  = 90mΩ<br>DS(on)<br>G<br>ID = 17A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

a **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A -——— IDM ee Pulsed Drain Current 60 _ ~~a~~ PD @TC = 25°C Power Dissipation 70 W ~~a~~ Linear Derating Factor 0.47 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~OOO~~ IAR Avalanche Current 9.0 A ~~a~~ EAR Repetitive Avalanche Energy 7.0 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 7.4 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~pfTT~~ Soldering Temperature, for 10 seconds ~~OOOO~~ 300 (1.6mm from case ) ~~a~~ Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|2.15|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es~~|~~ee~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~es~~|**Typ. **<br>es<br>~~ee~~|**Max. **<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|100<br>~~es ~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~**a**~~|Breakdown Voltage Temp. Coefficient<br>~~a~~<br>~~**a**~~|–––<br>~~a~~|0.11<br>~~a~~|–––<br>~~a~~|V/°C<br>~~a~~|Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)<br>~~**a**~~|Static Drain-to-Source On-Resistance<br>~~**a**~~|–––|–––|90|mΩ|VGS= 10V, ID= 9.0A<br>~~@~~|
|VGS(th)<br>~~**a**~~|Gate Threshold Voltage<br>~~**a**~~|2.0|–––|4.0|V|VDS= VGS, ID= 250µA<br>~~@~~|
|gfs|Forward Transconductance<br>~~—~~|12<br>~~—~~|–––<br>~~—~~|–––<br>~~—~~|S<br>~~—~~|VDS= 50V, ID= 9.0A<br>~~—~~|
|IDSS|Drain-to-Source Leakage Current<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|25<br>~~a~~|µA<br>~~a~~|VDS= 100V, VGS= 0V<br>~~a~~|
|||–––<br>~~a~~|–––<br>~~a~~|250<br>~~a~~||VDS= 80V, VGS= 0V, TJ= 150°C<br>~~a~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~<br>~~PT~~|–––<br>~~a~~|–––<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VGS= 20V<br>~~a~~|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|37<br>~~ee~~|nC|ID= 9.0A<br>VDS= 80V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs<br>~~—>-ss~~|Gate-to-Source Charge<br>~~—>-ss~~|–––|–––|7.2|||
|Qgd<br>~~—>-ss~~|Gate-to-Drain("Miller")Charge<br>~~—>-ss~~|–––|–––|11|||
|td(on)<br>~~—>-ss~~|Turn-On Delay Time<br>~~—>-ss~~|–––|9.2|–––|ns|VDD= 50V<br>ID= 9.0A<br>RG= 12Ω<br>VGS= 10V, See Fig. 10<br>®|
|tr<br>~~—>-ss~~<br>es|Rise Time<br>~~—>-ss~~<br>~~ee~~|–––<br>~~ee~~|22<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>es<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~<br>~~eT~~|–––<br>~~ee~~<br>~~eT~~|35<br>~~ee~~<br>~~eT~~|–––<br>~~ee~~|||
|tf<br>es<br>~~ee~~|Fall Time<br>~~ee~~<br>~~eT~~|–––<br>~~ee~~<br>~~eT~~|25<br>~~ee~~<br>~~eT~~|–––<br>~~ee~~|||
|LD<br>~~ee~~<br>~~pf~~|Internal Drain Inductance<br>~~eT~~<br>~~te~~<br>~~pf~~|–––<br>~~eT~~<br>~~te~~|~~eT~~<br>~~te~~|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®<br>~~&~~|
|LS<br>~~ee~~<br>~~pf~~|Internal Source Inductance<br>~~eT~~<br>~~te~~<br>~~pf~~|–––<br>~~eT~~<br>~~te~~<br>ee|~~eT~~<br>~~te~~|–––|nH||
|Ciss<br>~~pf~~|Input Capacitance<br>~~pf~~<br>~~ee~~|–––<br>~~ee~~<br>ee|920<br>~~ee~~|–––<br>~~ee~~|pF<br>~~Of~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~&~~<br>~~Of~~|
|Coss<br>~~pf~~<br>~~ee~~|Output Capacitance<br>~~pf~~|–––<br>ee|130|–––|||
|Crss<br>~~ee~~<br>~~Po~~|Reverse Transfer Capacitance<br>~~Of~~|–––<br>~~Of~~|19<br>~~Of~~|–––<br>~~Of~~|||
|EAS<br>~~ee~~<br>~~Po~~|Single Pulse Avalanche Energy<br>~~Of~~|–––<br>~~Of~~|340<br>~~Of~~|93<br>~~Of~~|mJ<br>~~Of~~|IAS= 9.0A, L = 2.3mH<br>~~Of~~|



oe Repetitive rating;  pulse width limited by 

max. junction temperature. (See fig. 11) 

Starting TJ = 25°C, L = 2.3mH 

RG = 25Ω, IAS = 9.0A, VGS=10V (See Figure 12) 

Pulse width ≤ 400µs; duty cycle ≤ 2%. ® This is a typical value at device destruction and represents operation outside rated limits. 

This is a calculated value limited to TJ = 175°C . 

@ ISD ≤ 9.0A ; di/d ≤ 410A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

www.irf.com 

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 100  100<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V6.0V a 7.0V6.0V ll<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>a i eee<br>4.5V<br> 10 taA il 4.5V y Lt  10 Fo<br>ey 0 | el a | ll<br>PALI TI TT Py’ All A<br> 1 A 20µs PULSE WIDTHT  = 25J °C  1 LA TE 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 3.5<br>ID = 15A<br>3.0<br>ee T  = 25  CJ ° e ee ee<br>e e ae 2.5 | | | | dT dT dT dT LWT WT |<br>AS eee<br>T  = 175  CJ ° 2.0<br>PODZ ZA<br>1.5<br>| EEEEEEE pre<br>POZE) FEeeepeESoe<br>1.0 | | Pee tT tT TT tT<br>Va PPPrT<br>0.5 Ler | | dT] | Tt tT<br>V      = 50VDS<br> 10 20µs PULSE WIDTH 0.0 tfPE tT fetT pee VGS EE = 10V |<br>4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

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1600 20<br>VGS = 0V, f = 1MHz ID = 9.0A<br>1200 HI—T CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 16 T aaT VVVDSDSDS === 80V 50V 20V _=<br>a Ciss c t PTT ye<br>12<br>| e eA<br>800<br>KLIP ra ill TTT AA<br>Coss 8<br>a a nn Aa<br>400<br>NUL1 ETT an=Aen<br>4<br>Crss<br>FOR TEST CIRCUIT<br>0 Sa eslll 0 VEAmma RE SEE FIGURE       13<br> 1  10  100 0 10 20 30 40<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>T  = 175  CJ °<br>100<br> 10<br>10<br>100µsec<br> 1<br>1msec<br>T  = 25  CJ ° 1<br>pf fp t n a<br>Tc = 25°C<br>Tj = 175°C 10msec<br>0.10.2 POP 0.4 0.6 0.8 1.0 E V      = 0 V GS1.2 1.4 0.1 PE Single Pulse ot<br>1 10 100 1000<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS  , Drain-toSource Voltage (V)<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
20 PT TTT Ty yy Vos ae<br>16<br>SQGe00000008 Mes A,<br>P| SNE EE EEE Ro | “ - ;<br>12<br>SERERNEEEEEE °°<br>RRR }t Vos<br>≤ 1<br>≤ 0.1 %<br>8<br>SERSEEEEXEE puyracor<br>PT TT EE EEK :<br>4 Pr} | tty tty. Fig 10a. Switching Time Test Circuit<br>VDS<br>SOSSSe Reni 90% —<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>PLETE TTT  Ty 10% \ OV<br>Fig 9.   Maximum Drain Current Vs. VGS a\« p< >|oohPy ><br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 10<br>ae neanra S10 | es Oe GG] ee ST | EAT]<br>en eee es nn<br>D = 0.50<br> 1 e ne<br>an<br>0.20<br>0.10<br>e e es a<br>0.05 PDM<br>0.1 0.02 SINGLE PULSE<br>— 0.01 Ne Ser (THERMAL RESPONSE) ee eee t1<br>ELE Y<br>a t2<br>rT dE Ty 1. Duty factor D =Notes: t   / t1 2<br>Sie 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**----- Start of picture text -----**<br>
200<br>ID<br>Pit<br>TOP 3.7A<br>6.4A<br>GEaEEEE<br>160 Naas BOTTOM 9.0A<br>PNP Pe<br>120 Ne NGREEREE<br>80<br>SETINNINN AN<br>40<br>|_| “SSATt “SSATtTt<br>SSTSee<br>See EeEn. <S<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>Fig 12c. MaximumVs. 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>TOP 3.7A<br>6.4A<br>GEaEEEE<br>160 BOTTOM 9.0A<br>VDS L DRIVER<br>Naas<br>RG D.U.T + 120 PNP Pe<br>- [V][DD]<br>IAS A<br>ai 20VVGS Ne NGREEREE<br>tp 0.01Ω<br>80<br>Fig 12a. UnclampedaInductive Test Circuit SETINNINN AN<br>40<br>|_| “SSATt “SSATtTt<br>V(BR)DSS<br>_ tp SSTSee EeEn. <S<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>//al\ Fig 12c. MaximumVs. 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Oo Same Type as D.U.T. :<br>50KΩ<br>12V .2µF<br>QG .3µF<br>CT res<br>+<br>Ves ae : D.U.T. -VDS<br>QGS QGD<br>VGS<br>VG 3mA<br>an “ . is |<br>On.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


www.irf.com 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

www.irf.com 

7 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>maey CO =<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| dar_ 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X AP [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M = 2.92 (.115)<br>2.64 (.104)<br>(___} 2.54 (.100) || T<br>2X<br>**----- End of picture text -----**<br>


NOTES: 1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMBLED ON WW 19, 1997 INT ERNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RE CT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>YEAR  7 =  1997<br>AS SE MBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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