# Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648255/)

**URL**: https://novapart.co/products/IRF5305PBF/power-mosfet-p-channel-55-v-31-a-006-ohm-to-220ab
**SKU**: IRF5305PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5010
**Stock**: 1000+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648255/)

PD - 94788 

## IRF5305PbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free 

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D<br>VDSS = -55V<br>R  = 0.06Ω<br>DS(on)<br>G<br>ID = -31A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~i~~|**Absolute Maximum Ratings**<br>||||
|---|---|---|---|---|
|~~ies~~|**Parameter**<br>~~es~~|**Max.**<br>~~ae~~||**Units**<br>~~ae~~|
|ID@ TC= 25°C<br>~~ies~~|Continuous Drain Current, VGS@ -10V<br>~~es~~|-31<br>~~ae~~||A<br>~~ae~~<br>~~a~~|
|ID@ TC= 100°C<br>~~es~~|Continuous Drain Current, VGS@ -10V<br>~~es~~<br>~~a~~|-22<br>~~ae~~<br>~~a~~|||
|IDM<br>~~es~~<br>~~>~~|Pulsed Drain Current<br>~~es~~<br>~~>~~<br>~~a~~|-110<br>~~ae~~<br>~~a~~|||
|PD@TC= 25°C<br>~~es~~<br>~~a~~|Power Dissipation<br>~~es~~<br>~~a~~<br>~~a~~|110<br>~~ae~~<br>~~a~~<br>~~a~~||W<br>~~ae~~<br>~~a~~<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|0.71<br>~~a~~||W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~||V<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~|280<br>~~a~~||mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|-16<br>~~a~~||A<br>~~a~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a~~|11<br>~~a~~||mJ<br>~~a~~|
|dv/dt<br>~~a~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~pf~~|-5.0<br>~~a~~||V/ns<br>~~a~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 175||°C|
|~~pf~~<br>a|SolderingTemperature, for 10 seconds<br>~~pf~~|300(1.6mm from case)|||
|~~pf~~<br>~~eos~~|Mounting torque, 6-32 or M3 srew<br>~~pf~~<br>~~eos~~|10 lbf•in (1.1N•m)<br>~~eos~~||~~eos~~|
|**Thermal Resistance**|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|1.4|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**||
|---|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.4|||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W||
|RθJA|Junction-to-Ambient|–––|62|||
|||||10/31/03||



## IRF5305PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||ee|es||||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min.**<br>ee<br>ee<br>~~ee~~|**Typ. **<br>ee<br>es|**Max.**<br>ee|**Units**<br>ee|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>ee<br>~~es~~|-55<br>ee<br>ee<br>~~ee~~<br>~~es~~|–––<br>es<br>ee|–––<br>ee|V<br>ee|VGS= 0V, ID= -250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|-0.034 <br>~~ee~~|–––<br>~~ee~~|V/°C<br>~~ee~~|Reference to 25°C, ID= -1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|–––|0.06|Ω|VGS= -10V, ID= -16A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~ee~~|-2.0<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>|-4.0<br>~~es~~<br>|V<br>~~es~~<br>|VDS= VGS, ID= -250µA<br>~~®~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~ee~~|8.0<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>|–––<br>~~ee~~<br>|S<br>~~ee~~<br>|VDS= -25V, ID= -16A|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~eee~~|–––<br>~~eee~~|-25<br>~~eee~~|µA<br>~~eee~~<br>~~a~~|VDS= -55V, VGS= 0V|
|||–––<br>~~ee~~<br>~~eee~~<br>~~a~~|–––<br>~~eee~~<br>~~a~~|-250<br>~~eee~~<br>~~a~~||VDS= -44V, VGS= 0V, TJ= 150°C<br>~~a~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee ~~<br>~~a~~<br>~~ee~~|–––<br>~~ee~~<br> <br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br><br>~~a~~<br>~~ee~~|100<br><br>~~a~~<br>~~ee~~|nA<br><br>~~a~~<br>~~_~~|VGS= 20V<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~||VGS= -20V|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|63<br>~~ee~~|nC|ID= -16A<br>VDS= -44V<br>VGS= -10V, See Fig. 6 and 13<br>°|
|Qgs<br>a~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––|–––|13|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––|–––|29|||
|td(on)<br>~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|14<br>~~ee~~|–––<br>~~ee~~|ns<br>~~jE~~|VDD= -28V<br>ID= -16A<br>RG= 6.8Ω<br>RD= 1.6Ω,See Fig. 10<br>°<br>,|
|tr<br>~~ee~~<br>~~a~~<br>PR|Rise Time<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>|66<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|td(off)<br>PR|Turn-Off Delay Time<br>|–––<br>|39<br>|–––<br>|||
|tf<br>PR~~jE~~|Fall Time<br>~~jE~~|–––<br>~~jE~~|63<br>~~jE~~|–––<br>~~jE~~|||
|LD<br>~~jE~~|Internal Drain Inductance<br>~~jE~~|–––<br>~~jE~~|4.5<br>~~jE~~|–––<br>~~jE~~|nH<br>~~jE~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>,|
|LS<br>~~jE~~<br>~~pf~~|Internal Source Inductance<br>~~jE~~<br>~~pf~~|–––<br>~~jE~~|7.5<br>~~jE~~|–––<br>~~jE~~|nH<br>~~jE~~||
|Ciss<br>~~pf~~|Input Capacitance<br>~~pf~~|–––|1200|–––|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~pf~~<br>~~es~~|Output Capacitance<br>~~pf~~<br>~~es~~|–––<br>~~es~~<br>ee|520<br>~~es~~|–––<br>~~es~~|||
|Crss<br>a|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>ee|250<br>~~es~~|–––<br>~~es~~|||
|**Source-Drain Ratings and Characteristics**<br>a~~es~~<br>ee|||||||
||**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**|**Conditions**|
|IS<br>~~—~~|Continuous Source Current<br>(Body Diode)|–––|–––|-31|A<br>~~-~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~-~~|
|ISM<br>~~—~~|Pulsed Source Current<br>(BodyDiode)|–––|–––|-110|||
|VSD<br>~~—~~<br>~~Pe~~|Diode Forward Voltage|–––<br>es|–––|-1.3|V<br>~~-~~|TJ= 25°C, IS= -16A, VGS= 0V<br>~~-~~<br>@|
|trr<br>~~—~~<br>~~Pe~~|Reverse Recovery Time<br>~~es~~|–––<br>~~es~~<br>es|71<br>~~es~~|110<br>~~es~~|ns<br>~~-~~<br>~~es~~|TJ= 25°C, IF= -16A<br>di/dt = -100A/µs<br>~~-~~<br>@|
|Qrr<br>~~Pe~~|Reverse RecoveryCharge|–––<br>es|170|250|nC||



## **Source-Drain Ratings and Characteristics** 

|||**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**|**Conditions**||||
|---|---|---|---|---|---|---|
|IS<br>ISM<br>VSD<br>trr<br>Qrr<br>~~—~~<br>~~Pe~~||Continuous Source Current<br>(Body Diode)<br>–––<br>–––<br>Pulsed Source Current<br>(BodyDiode)<br>–––<br>–––<br>Diode Forward Voltage<br>–––<br>–––<br>-1.3<br>V<br>Reverse Recovery Time<br>–––<br>71<br>110<br>ns<br>Reverse RecoveryCharge<br>–––<br>170<br>250<br>nC<br>-31<br>-110<br>A<br>~~-~~<br>~~es~~<br>es|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>TJ= 25°C, IS= -16A, VGS= 0V<br>TJ= 25°C, IF= -16A<br>di/dt = -100A/µs<br>G<br>@||= 0V<br>S<br>D<br>~~-~~||



## **Notes:** 

Oo Repetitive rating;  pulse width limited by 6) ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C 

@ VDD = -25V, starting TJ = 25°C, L = 2.1mH RG = 25Ω, IAS = -16A. (See Figure 12) 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

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1000<br>                   VGS<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V Ty TT<br>                  - 7.0V |<br>                  - 6.0V<br>                  - 5.5V<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>100<br>ee es |<br>a<br>bt ee |<br>10 | fe<br>S47  -4.5V<br>VI 1 ev<br> 20µs PULSE WIDTH<br>1 AA  T   = 25°CJc<br>0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>                   VGS<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V ee<br>                  - 7.0V                  - 6.0V A |<br>                  - 5.5V<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>100<br>a Aea<br>a 7a<br>eT<br>10 |OG<br>| [fAGi —— -4.5V<br>7 A<br> 20µs PULSE WIDTH<br>1 YWfy |  T   = 175°CCJ<br>0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100 2.0<br>SSS SS SS SS SS  I    = -27AD<br>a ee ee ee ee ee<br>ee ee eee ee eee Fe<br>T  = 25°CJ<br>PtP| eA T  = 175°CJ 1.5 PEELEELE EAA<br>Ze a |<br>aaEDa an a<br>10 PIAL tL tt 1.0 PLE ERE ET<br>a / A ee ee ee ee ee ee eee<br>| YW | 7 | fy | fT ft ft LT |<br>| ff | | tf | ft oy yp ft Pua<br>0.5<br>(scene Geena<br> V     = -25VDS<br>1  20µs PULSE WIDTH  A 0.0  V      = -10V GS<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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Fig 4.   Normalized On-Resistance<br>Vs. Temperature<br>**----- End of picture text -----**<br>


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## IRF5305PbF 

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2500<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = Crss         gd<br>2000 al C      = C     + Coss        ds         gd<br>C iss<br>|<br>C oss<br>1500<br>PSSSTNSSCoo<br>1000<br>PONTE<br>C rss<br>Ea<br>500<br>SUM<br>EST<br>CCI CATT<br>0<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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1000<br>ee ee<br>ee ee ee<br>100<br>T  = 175°CJ<br>SS eS  2<br>T  = 25°CJ<br>10 PALE[ LI V      = 0V GS<br>0.4 0.8 1.2 1.6 2.0<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>I    = -16AD<br> V      = -44VDS<br> V      = -28VDS<br>16 Pp Pot te pe Son<br>12<br>SaeeGeeneyZe<br>8<br>Seen enns 408<br>Eaneeny/dnen<br>4<br>Sanne oenee<br>Pee  FOR TEST CIRCUIT<br>7pJott     SEE FIGURE 13<br>0<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>ee ee ee<br>100<br>ee el<br>100µs<br>10<br>ee Mh S S 1ms<br> T     = 25°CC 10ms<br> T     = 175°CJ<br>1 L  Single Pulse ae<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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IRF5305PbF<br>**----- End of picture text -----**<br>


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RD<br>VDS<br>VGSGS<br>D.U.T.<br>RGG<br>owl. +-- VDDDD<br>-10V<br>Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %≤ 0.1 %≤ 1 µsµs<br>Duty Factor ≤ 0.1 %≤ 0.1 %≤ 1 µsµs<br>:<br>Fig 10a.   Switching Time Test Circuit<br>td(on)d(on) trr td(off)d(off) tff<br>VGSGS oo. _.<br>10% anV7V7<br>90% X ,<br>VDSDS LL<br>**----- End of picture text -----**<br>


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35 a VGSGS<br>30 PEEP yey RGG D.U.T.<br>aS owl. +-- VDDDD<br>25 TTKEELE<br>a EE -10V<br>20 PT EE EERE Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %≤ 0.1 %≤ 1 µsµs<br>FFPEPeeLEEN [LLL,] EL]<br>ee :<br>15 FF PELE eeLeeN [i Fig 10a.   Switching Time Test Circuit<br>10 PEP PN<br>td(on)d(on) trr td(off)d(off) tff<br>FTEPEeeeeceer ern oo. _.<br>VGSGS<br>5 PFEreeeEeEeLeLL Lil 10%<br>| anV7V7<br>0<br>25 50 75 100 125 150 175<br>a T   , Case TemperatureC (  C)° 90% X ,<br>LL<br>VDSDS<br>Fig 9.   Maximum Drain Current Vs. Fig 10b.   Switching Time Waveforms<br>Case Temperature<br> 10<br>Pt—CSS‘“(‘<$ESSS:(C‘$ENSP§$ STs |<br>PT<br>Hf} ef te fF tt tt<br> 1 en ee ee eee<br>e D = 0.50 y<br>ee ee ee<br>0.20<br>——$<—$—— neo<br>0.10<br>nS eetel PDM<br>0.1 0.05 eesoe<br>t1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>=aesSS S Peee Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRF5305PbF 

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VDS L<br>RG D.U.T il VDD<br>IAS<br>Fate -20V Nv 7 DRIVER<br>tp 0.01Ω<br>15V<br>-<br>+<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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IAS<br>No]<br>\ |<br>\<br>¢— tp<br>V(BR)DSS<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>-10V<br>QGS QGD<br>VG<br>van<br>Charge<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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700<br>                    ID<br>600 NeeP| ft | ft TOP            -6.6A                   -11A<br>BOTTOM    -16A<br>PN [ft]<br>PNET<br>500 PIN | ft Et tt<br>ae Nee<br>400 WAVE<br>300 UGNUNEAN ee ee<br>200 P PTSARIN NIN ERE<br>100 P| |) AAW A<br>Pty tT Ty ISS A<br> V      = -25V ee DD<br>0<br>25 50 75 100 125 150 175<br>ee ee<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA<br>is |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRF5305PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>|(faa)|« -       Current Transformer<br>+<br>ae<br>- - +<br>a<br>00<br>**<br>RG •  dv/dt controlled by RG + *<br>s e ; •  ISD controlled by Duty Factor "D" - VDD<br>VGS* •  D.U.T. - Device Under Test<br>*  Reverse Polarity for P-Channel<br>** Use P-Channel Driver for P-Channel Measurements<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>—— + _<br>t<br>[          ] ***VGS=10V<br>t<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt J<br>® D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>[    ]VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% [    ]ISD<br>**----- End of picture text -----**<br>


- *** VGS = 5.0V for Logic Level and 3V Drive Devices 

**Fig 14.** For P-Channel HEXFETS 

www.irf.com 

7 

## IRF5305PbF 

## TO-220AB Package Outline 

Dimensions are shown in millimeters (inches) 

**==> picture [393 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| an = = 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>oF<br>15.24 (.600) 9<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045) LEAD ASSIGNMENTS<br>     MIN HEXFET       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>3- SOURCE       4 - DRAIN 3- EMITTER<br>| dar= 4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>ain<br>3X [1.40 (.055)] 3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>1.15 (.045) 0.36  (.014)        M    B   A   M<br>2.92 (.115)<br>2.64 (.104)<br>c— 2.54 (.100) - T<br>2X<br>**----- End of picture text -----**<br>


NOTES: 

1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

## TO-220AB Part Marking Information 

**==> picture [422 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789<br>PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL<br>IN THE ASSEMBLY LINE "C" RECTIFIER<br>LOGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DATE CODE<br>YEAR 7 =  1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/03 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF5305PBF/power-mosfet-p-channel-55-v-31-a-006-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf5305pbf/mosfet-p-55v-31a-to-220/dp/8648255)
---

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