# Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1298529RL/)

**URL**: https://novapart.co/products/IRF5210STRLPBF/power-mosfet-p-channel-100-v-38-a-006-ohm-to-263
**SKU**: IRF5210STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3300
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 38A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298529RL/)

Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free 

Features of this design  are a 150°C junction operating temperature, fast switching speed and Description improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in  a wide variety of other applications. 

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|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

|~~Cn~~|**Parameter**<br>~~Cn~~|**Max.**<br>|**Units**<br>|
|---|---|---|---|
|ID@ TC= 25°C<br>~~Cn~~|Continuous Drain Current,VGS@ -10V<br>~~Cnee~~|-38<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C<br>~~Cn~~<br>~~a~~|Continuous Drain Current,VGS @ -10V<br>~~Cnee~~<br>~~a~~|-24<br>~~ee~~<br>||
|IDM<br><br>~~a~~|Pulsed Drain Current<br>~~ee~~<br>~~aSS~~|-140<br>~~ee~~<br>~~SS~~||
|PD@TA= 25°C<br><br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>~~aSS~~|3.1<br>~~ee~~<br>~~SS~~|W<br>~~ee~~|
|PD@TC= 25°C<br>|Maximum Power Dissipation<br>~~SS~~<br>~~a~~|170<br>~~SS~~<br>~~a~~||
||Linear Derating Factor<br>~~SS~~<br>~~a~~|1.3<br>~~SS~~<br>~~a~~|W/°C|
|VGS|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~ef~~|± 20<br>~~ef~~|V<br>~~ef~~|
|EAS|Single Pulse Avalanche Energy<br>~~ET~~|120<br>~~ET~~|mJ<br>~~ET~~|
|IAR|Avalanche Current<br>~~ET~~<br>~~a~~|-23<br>~~ET~~<br>~~a~~<br>~~(~~|A<br>~~ET~~<br>~~a~~|
|EAR|Repetitive Avalanche Energy<br>~~a~~<br>~~ne~~<br>~~Oe~~|17<br>~~a~~<br>~~ne~~<br>~~(~~|mJ<br>~~a~~<br>~~ne~~|
|dv/dt<br>~~po~~|Peak Diode Recoverydv/dt<br>~~Pl~~<br>~~Oe~~<br>~~po~~|-7.4<br>~~(~~<br>~~Pl~~<br>~~po~~|V/ns<br>~~Pl~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~Oe~~<br>~~po~~|-55  to + 150<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case )<br>~~po~~||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~pT~~|-100<br>~~pT~~|–––<br>~~pT~~|–––<br>~~pT~~|V<br>~~pT~~|VGS= 0V, ID= -250µA<br>~~pT~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~pe~~|–––<br>~~pe~~|-0.11<br>~~pe~~|–––<br>~~pe~~|V/°C<br>~~pe~~|Reference to 25°C, ID= -1mA<br>~~pe~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~pO~~|–––<br>~~pO~~|–––<br>~~pO~~|60<br>~~pO~~|mΩ<br>~~pO~~|VGS= 10V, ID= -38A<br>~~pO~~|
|VGS(th)|Gate Threshold Voltage<br>~~pO~~<br>~~GG~~|-2.0<br>~~pO~~<br>~~GG~~|–––<br>~~pO~~<br>~~GG~~|-4.0<br>~~pO~~<br>~~GG~~|V<br>~~pO~~<br>~~GG~~|VDS= VGS, ID= -250µA<br>~~pO~~<br>~~GG~~|
|gfs|Forward Transconductance<br>~~GG~~<br>~~pT~~|9.5<br>~~GG~~<br>~~pT~~|–––<br>~~GG~~<br>~~pT~~<br>~~ree~~|–––<br>~~GG~~<br>~~pT~~<br>~~ree~~|S<br>~~GG~~<br>~~pT~~<br>~~Oe ee~~|VDS= -50V, ID= -23A<br>~~GG~~<br>~~pT~~<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~re~~|–––<br>~~re~~<br>~~|~~|–––<br>~~re~~<br>~~ree~~<br>~~|~~|-50<br>~~re~~<br>~~ree~~<br>|µA<br>~~re~~<br>~~Oe ee~~|VDS= -100V, VGS= 0V<br>~~re~~<br>~~ee~~|
|||–––<br>~~re~~<br>~~|~~|–––<br>~~re~~<br>~~ree~~<br>~~||~~|-250<br>~~re~~<br>~~ree~~<br>~~|~~||VDS= -80V, VGS= 0V, TJ= 125°C<br>~~re~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~re~~<br>~~———————~~|–––<br>~~re~~<br>~~|~~<br>~~———————~~|–––<br>~~re~~<br>~~ree~~<br>~~||~~<br>~~———————~~<br>~~ee~~|100<br>~~re~~<br>~~ree ~~<br>~~|~~<br>~~———————~~|nA<br>~~re~~<br> ~~Oe ee~~<br>~~———————~~|VGS= 20V<br>~~re~~<br>~~ee~~<br>~~———————~~|
||Gate-to-Source Reverse Leakage<br>~~———————~~|–––<br>~~———————~~<br>~~a~~|–––<br>~~———————~~<br>~~a~~<br>~~ee~~|-100<br>~~———————~~<br>~~a~~||VGS= -20V<br>~~———————~~|
|Qg|Total Gate Charge<br>~~———————~~<br>~~es~~|–––<br>~~———————~~<br>~~a~~<br>~~es~~|150<br>~~———————~~<br>~~a~~<br>~~ee~~<br>~~es~~|230<br>~~———————~~<br>~~a~~<br>~~es~~|nC<br>~~———————~~<br>~~a~~|ID= -23A<br>VDS= -80V<br>VGS= -10V<br>~~———————~~<br>~~a@~~|
|Qgs|Gate-to-Source Charge<br>~~po~~|–––<br>~~po~~|22<br>~~po~~|33<br>~~po~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~a~~|–––<br>~~a~~|81<br>~~a~~|120<br>~~a~~|||
|td(on)|Turn-On DelayTime<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|14<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|VGS= -10V<br>RG= 2.4Ω<br>VDD= -50V<br>ID= -23A<br>~~a~~<br>~~a~~<br>~~@~~<br>P|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~|63<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~po~~|–––<br>~~po~~|72<br>~~po~~|–––<br>~~po~~|||
|tf<br>~~po~~|Fall Time<br>~~a~~<br>~~po~~|–––|55|–––|||
|LD<br>~~po~~<br>~~Po~~|Internal Drain Inductance<br>~~a~~<br>~~po~~<br>~~Po~~|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~@~~<br>P<br>~~(a~~<br>4|
|LS<br>~~po~~<br>~~Po~~|Internal Source Inductance<br>~~po~~<br>~~Po~~|–––|7.5|–––|||
|Ciss<br>~~Po~~|Input Capacitance<br>~~Po~~<br>~~a~~|–––<br>~~a~~|2780<br>~~a~~|–––<br>~~a~~|pF|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~(a~~|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|800<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~po~~|–––<br>~~po~~|430<br>~~po~~|–––<br>~~po~~|||



@ Pulse width ≤ 300ys; duty cycle ≤ 2%. @® When mounted on 1" square PCB (FR-4or G-10 

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ISD ≤ -23A, di/dt ≤ -650A/us, Vpp ≤ ≤ 

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1000 1000<br>VGS VGS<br>TOP           -15V TOP           -15V<br>-10V -10V<br>-8.0V -8.0V<br>-7.0V Pty -7.0V |<br>100 -6.0V ell 100 -6.0V et<br>-5.5V -5.5V<br>-5.0V -5.0V<br>BOTTOM -4.5V F e BOTTOM -4.5V yy | |||) te |<br>10 10<br>| | gg | [|][L] [g]<br>-4.5V<br>-4.5V<br>Go PF Og Eni<br>1 1<br>2 7a | a<br>≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH<br>0.1 ie== Tj = 25°C e eeill 0.1 iEE e Tj = 150°C ill al<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>1000 2.0<br>ID = -38A<br>a VGS = -10V ATLL<br>Pp T = 25°C 7<br>J<br>100<br>Sar EEnD Zan<br>a TJ = 150°C 1.5<br>i<br>10 a se4 e O neya<br>ey | ee ee ee ee eee 1.0 WA<br>1<br>F fosassse L ae<br>a 2 VDS = -50V — Ya<br>ie ≤ 60µs PULSE WIDTH<br>0.1 0.5<br>ee e e CA<br>2 4 6 8 10 12 14 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100000 12.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= -23A<br>| Crss   = C gd  10.0 P p, {it VDS= -80V ff<br>Coss   = Cds + Cgd VDS= -50V<br>10000 =e ae 8.0 ieee VDS= -20V 74ea<br>at Ciss 6.0 a m Li) |<br>RSSSS EH {|_|2 4<br>C<br>1000 tt oss TE 4.0 f litt |<br>C<br>rss<br>a ee 2.0<br>ee eee ee<br>100 eeee 0.0 Pp} } fo fol<br>1 10 100 0 25 50 75 100 125 150<br>-VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>ey<br>100<br>S SS aly HEHE<br>TJ = 150°C SS a SS = 100 Pil<br>s ee 2|<br>es ee a A T = 25°C A<br>J<br>10 S es SS SSeS SS A a e t<br>100µsec<br>10<br>ee ee Be  SNe ee<br>1<br>1msec<br>Tc = 25°C<br>ee ee eee ee ee e elP tH<br>VGS = 0V Tj = 150°CSingle Pulse 10msec<br>0.1 Ppan 1 e n:elaa<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000<br>-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>-ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>-VGS, Gate-to-Source Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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40<br>35<br>-<br>+<br>a vs<br>30<br>25 ≤ 1<br>≤ 0.1 %<br>2015 | | fl | NE Fig 10a. Switching Time Test Circuit<br>10<br>td(on) tr td(off) tf<br>T EER<br>5 VGS<br>10%<br>0<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ee 90% Via,K /\<br>VDS<br>Fig 9. Maximum Drain Current vs. Fig 10b. Switching Time Waveforms<br>Case Temperature<br>1<br>D = 0.50<br>er et | | | |<br>P 0.20 T oor<br>0.1 0.10 ee | |<br>ampP er R1 R1 R2 R2 R3R3 ee Ri (°C/W) τι  ( tT sec i )<br>Pe 0.05 ee A I τ J τ S J τ 1 τ 1 ed τ 2 τ 2 τ 3 τ 3 τ C τ ee 0.1283090.377663 0.0000690.001772 |<br>0.02<br>Ci=  τ i / Ri<br>Ci=  τ i / Ri 0.244513 0.010024<br>a 0.01 p | |<br>0.01<br>PA SINGLE PULSE P EE EE<br>Dan ( THERMAL RESPONSE ) ee ee ee Notes: ns ee<br>7 a E eet, 1. Duty Factor D = t1/t2<br>PE P PP 2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>-ID,  Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


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VDS L<br>RG D.U.T VDD<br>IAS<br>ani -20V DRIVER L.<br>tp 0.01 Ω<br>15V<br>**----- End of picture text -----**<br>


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500<br>ID<br>450<br>TOP         -8.7A<br>400 A -14A<br>L LL<br>B NE BOTTOM -23A<br>350<br>P IN<br>300 | |<br>E RNE<br>250<br>200 N EG<br>150 B NENSE EEE<br>100 S RNENEEEE<br>50<br>P R SANT<br>0 Pt | | |re<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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IAS<br>0<br>25 50 75 100 125<br>Sf] Starting TJ , Junction Temperature (°C)<br>‘||<br>\ Fig. 13. Maximum| Avalanche<br><— tp vs. Drain Current<br>V(BR)DSS<br>12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>QG 12V .2 µ F<br>o o , See) .3 µ F<br>QGS QGD D.U.T. +-VDS<br>7 — ~ VGS tits<br>VG<br>-3mA<br>© |<br>On.<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


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—_ +    •  Low Stray Inductance<br>®  •   Ground Plane<br> •   Low Leakage Inductance<br>Current Transformer<br>-<br>+<br>® =<br>- - +<br>BB ®<br>00<br>+<br>NO •   dv/dt controlled by Rg<br>•   -<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period yt[<br>GS<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>Ly<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 7 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>0000 OS O08 1<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>CT 16.10 (.634) J 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>


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13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) a<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) Tc 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/09 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irf5210strlpbf/mosfet-p-100v-d2-pak/dp/1298529RL)
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