# Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:9103031/)

**URL**: https://novapart.co/products/IRF520NPBF/power-mosfet-n-channel-100-v-97-a-02-ohm-to-220ab
**SKU**: IRF520NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2640
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 47W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 9.7A |
| Drain Source On State Resistance | 0.2ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9103031/)

## PD - 94818 

## IRF520NPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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D<br>VDSS = 100V<br>R  = 0.20Ω<br>DS(on)<br>G<br>ID = 9.7A<br>S<br>**----- End of picture text -----**<br>


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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~Sn~~|~~nnn~~||||
|---|---|---|---|---|
|~~Sn~~|**Parameter**<br>~~nnn~~|**Max.**||**Units**|
|ID@ TC= 25°C<br>~~Sn~~|Continuous Drain Current, VGS@ 10V<br>~~nnn~~|9.7||A<br>~~a~~|
|ID@ TC= 100°C<br>~~Sn ~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br> ~~nnn~~<br>~~a~~|6.8<br>~~a~~|||
|IDM|Pulsed Drain Current|38|||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~a~~|48<br>~~a~~||W<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|0.32<br>~~a~~||W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~||V<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~|91<br>~~a~~||mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|5.7<br>~~a~~||A<br>~~a~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a~~|4.8<br>~~a~~||mJ<br>~~a~~|
|dv/dt<br>~~a~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~pf~~|5.0<br>~~a~~<br>||V/ns<br>~~a~~<br>|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 175<br>||°C<br>~~a~~|
|~~pfa~~|SolderingTemperature, for 10 seconds<br>~~pfa~~|300(1.6mm from case)<br>~~a~~|||
|~~pf~~<br>~~a~~|Mounting torque, 6-32 or M3 srew<br>~~pf~~<br>~~a~~|10 lbf•in (1.1N•m)<br><br>~~a~~||~~a~~|
|**Thermal Resistance**<br>~~a~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|3.1|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|3.1||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|62||



11/5/03 

## IRF520NPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||~~es~~|~~**e**s~~|~~e~~~~**e**~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es<br>~~es~~|**Min.**<br>es<br>~~**e**s~~|**Typ. **<br>es<br>~~e~~~~**e**~~|**Max.**<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|100<br>~~**e**s~~|–––<br>~~e~~~~**e**~~|–––|V|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~se~~<br>~~es ee~~|–––<br>~~**e**s ~~<br>~~se~~<br>~~ee~~|0.11<br> ~~e~~~~**e**~~<br>~~se~~<br>~~ee~~|–––<br>~~se~~<br>~~ee~~|V/°C<br>~~se~~|Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es ee~~|–––<br>~~ee~~|–––<br>~~ee~~|0.20<br>~~ee~~|Ω|VGS= 10V, ID= 5.7A<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~es ee~~<br>~~se~~|2.0<br>~~ee~~<br>~~se~~<br>~~ee~~|–––<br>~~ee~~<br>~~se~~<br>~~es~~|4.0<br>~~ee~~<br>~~se~~|V<br>~~se~~|VDS= VGS, ID= 250µA<br>~~@~~|
|gfs|Forward Transconductance<br>~~es~~|2.7<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~es~~|–––<br>~~es~~|S<br>~~es~~|VDS= 50V, ID= 5.7A|
|IDSS<br>~~Sn~~|Drain-to-Source Leakage Current<br>~~ES~~<br>~~Sn~~|–––<br>~~ee ~~<br>~~ES~~|–––<br> ~~es~~<br>~~ES~~|25<br>~~ES~~|µA<br>~~ES~~|VDS= 100V, VGS= 0V<br>~~oo~~|
|||–––<br>~~ES~~|–––<br>~~ES~~|250<br>~~ES~~||VDS= 80V, VGS= 0V, TJ= 150°C<br>~~oo~~|
|IGSS<br>~~Sn~~|Gate-to-Source Forward Leakage<br>~~ES~~<br>~~Sn~~|–––<br>~~ES~~|–––<br>~~ES~~|100<br>~~ES~~|nA<br>~~ES~~|VGS= 20V<br>~~oo~~|
||Gate-to-Source Reverse Leakage<br>~~Sn~~<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|-100<br>~~a~~||VGS= -20V|
|Qg<br>~~Sn~~|Total Gate Charge<br>~~Sn~~<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|25<br>~~a~~|nC|ID= 5.7A<br>VDS= 80V<br>VGS= 10V, See Fig. 6 and 13<br>°|
|Qgs<br>a<br>~~Ce~~|Gate-to-Source Charge|–––|–––|4.8|||
|Qgd<br>~~Ce~~<br>~~a~~|Gate-to-Drain("Miller")Charge<br>|–––<br>ee<br>|–––<br>|11<br>|||
|td(on)<br>~~Ce~~<br>~~a~~<br>es|Turn-On Delay Time<br>~~es~~<br><br>|–––<br>~~es~~<br>ee<br><br>es<br>|4.5<br>~~es~~<br><br>|–––<br>~~es~~<br><br>|ns|VDD= 50V<br>ID= 5.7A<br>RG= 22Ω<br>RD= 8.6Ω,See Fig. 10<br>°<br>,|
|tr<br>~~Ce~~<br>~~a ee~~<br>es|Rise Time<br>~~ee~~<br>|–––<br>ee<br>~~ee~~<br>es<br>|23<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|td(off)<br>es|Turn-Off Delay Time<br>~~ee~~|–––<br>es<br>~~ee~~|32<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>es|Fall Time<br>|–––<br>es<br>|23<br>|–––<br>|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
|LS<br>~~pf~~|Internal Source Inductance<br>~~pf~~|–––|7.5|–––|nH||
|Ciss<br>~~pf~~|Input Capacitance<br>~~pf~~|–––|330|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~pf~~<br>a<br>ee|Output Capacitance<br>~~pf~~|–––|92|–––|||
|Crss<br>ee|Reverse Transfer Capacitance|–––|54|–––|||



## **Source-Drain Ratings and Characteristics** 

||**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|9.7|A<br>7<br>~~EEE~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~@~~|
|ISM<br>~~EEE~~|Pulsed Source Current<br>(BodyDiode)<br>~~EEE~~|–––<br>~~EEE~~|–––<br>~~EEE~~|38<br>~~EEE~~|||
|VSD<br>~~EEE~~<br>~~ee~~|Diode Forward Voltage<br>~~EEE~~|–––<br>~~EEE~~<br>es|–––<br>~~EEE~~|1.3<br>~~EEE~~|V<br>~~EEE~~|TJ= 25°C, IS= 5.7A, VGS= 0V<br>~~@~~<br>@|
|trr<br>~~EEE~~<br>~~ee~~|Reverse Recovery Time<br>~~EEE~~<br>~~ee~~|–––<br>~~EEE~~<br>~~ee~~<br>es|99<br>~~EEE~~<br>~~ee~~|150<br>~~EEE~~<br>~~ee~~|ns<br>~~EEE~~<br>~~ee~~|TJ= 25°C, IF= 5.7A<br>di/dt = 100A/µs<br>~~@~~<br>@|
|Qrr<br>~~ee~~|Reverse RecoveryCharge|–––<br>es|390|580|nC||



**Notes:** 

© Repetitive rating;  pulse width limited by © ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C 

© VDD = 25V, starting TJ = 25°C, L = 4.7mH @ Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 5.7A. (See Figure 12) 

## IRF520NPbF 

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100                    VGS 100                    VGS<br> TOP           15V  TOP           15V<br>                   10V                    10V<br>                   8.0V                   7.0V A|                    8.0V                   7.0V<br>                   6.0V a|                    6.0V 0 a<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br> BOTTOM   4.5V off Sl  BOTTOM   4.5V 1 a<br>10 IAT| AAR | 10 EUae |||<br>aE) | LiL Ae<br>sementt FleZetaae eesti|| | || ae|etae Zane<br>ee) / ae — 4.5V<br>| |!  4.5V | |<br> 20µs PULSE WIDTH   20µs PULSE WIDTH<br>1 Mi  T   = 25°CC A 1 i)ole  T   = 175°CC A<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100 3.0<br> I    = 9.5AD<br>ee Po LEE<br>2.5<br>po PE ee<br>ee ne ee PEE<br>Pot | ee 2.0 PEEA<br>T  = 25°CJ<br>10 ca in as T  = 175°CJ t 1.5 nn a<br>ee ee a ee pet tt A<br>| A PA<br>1.0<br>pA OA a<br>oy ee ee ee ee Peet Tt<br>V/A eee 0.5 eer<br> V     = 50VDS<br>1 (Ate  20µs PULSE WIDTH  A 0.0 PEELEPP eee  V      = 10V GS<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

## IRF520NPbF 

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**----- Start of picture text -----**<br>
600 20<br>V      = 0V,         f = 1MHzGS I    = 5.7AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds  V      = 80VDS<br>500 I C iss C      = CC      = C     + Crss         gdoss        ds         gd 16 E  V      = 50V V      = 20VDSDS u<br>. Pt —<br>400<br>> SSE 12 Aa<br>Ds | L 4<br>300 C oss<br>SSTNN O 8 UEE<br>200 RON Y<br>C rss<br>St ns Anne<br>4<br>100 P| AL| a4 ff<br> FOR TEST CIRCUIT<br>0 aell| A 0 (APJ} fo)     SEE FIGURE 13 f |<br>1 10 100 0 5 10 15 20 25<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

**==> picture [202 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>neee eeee ae<br>T  = 175°CJ A\7<br>10<br>T  = 25°CJ<br>—— esr<br>PoA<br>fT | LFFl iFTTte tt<br>1 A y y V      = 0V GS<br>0.4 0.6 0.8 1.0 1.2 1.4<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>10µs<br>10 atsCARINStN UI llT<br>Poses eral, 100µs peers<br>1ms<br>1 peep SSN ce<br>L I<br>10ms<br>| NT<br>PE aF E<br> T     = 25°CC<br> T     = 175°CJ<br>p  Single Pulse e p a l<br>0.1<br>1 10 100 1000<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

## IRF520NPbF 

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RD<br>VDS<br>><br>10.0<br>VGS<br>D.U.T.<br>NO EE EE RG<br>+<br>8.0 Pi AA ET EE a - [V] DD<br>PTT AMEE TE 10V |<br>6.0 Pulse Width ≤ 1 µs<br>PiSERRELTTE NEENEEET ; Duty Factor ≤ 0.1 % :<br>4.0 SEER EREEENEE Fig 10a.   Switching Time Test Circuit<br>SERRE eNG VDS<br>90%<br>2.0 SERREPit tT TTT Tt ||<br>0.0 SERRE |<br>25 50 75 100 125 150 175 10%<br>T   , Case TemperatureC (  C)° VGS | |<br>td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>Fig 9.   Maximum Drain Current Vs.<br>Case Temperature<br> 10<br>P D = 0.50 m<br> 1 e ee|TTT<br>0.20<br>a 0.10 og ee<br>e 0.050.02 SINGLE PULSE ee e PDM<br>0.1 Ee 0.01 (THERMAL RESPONSE)<br>| t1<br>t2<br>pT<br>a Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01 PL<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

## IRF520NPbF 

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**----- Start of picture text -----**<br>
L<br>VDS<br>D.U.T.<br>RG +<br>- VDD<br>~(4<br>10 V IAS<br>tp 0.01Ω<br>a |<br>Linn<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>t<br>p<br>- VDD<br>Al<br>VDS<br>IAS<br>**----- End of picture text -----**<br>


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200<br>                    I D<br>TOP            2.3A<br>160 NeSeeee                    4.0ABOTTOM    5.7A<br>TTTBNSnenen<br>120<br>NOE<br>NINO<br>80<br>ANNO<br>PNSXINT TT<br>40 PASSA<br>TSS<br>0  V      = 25V py DD SSS<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
— QG<br>10 V<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>1 mc<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

## IRF520NPbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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**----- Start of picture text -----**<br>
+ Circuit Layout Considerations<br>D.U.T<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(a)       Current Transformer<br>| | -<br>+<br>- - +<br>wh<br>tt<br>RG •  dv/dt controlled by RG +<br>( ln# •  Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•  D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>—— + _<br>t<br>VGS=10V *<br>t<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt J<br>® D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

## IRF520NPbF 

## TO-220AB Package Outline 

Dimensions are shown in millimeters (inches) 

**==> picture [342 x 327] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| cc ~ 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>ae<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| darae 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [1.40 (.055)] 1.15 (.045) io 3X0.36  (.014)        M    B   A   M [0.93 (.037)] 0.69 (.027) T 2.92 (.115)3X [0.55 (.022)] 0.46 (.018)<br>2.64 (.104)<br>2.54 (.100) || I<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>     2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.<br>TO-220AB Part Marking Information<br>EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER<br>IN THE ASSEMBLY LINE "C" RECTIFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DATE CODE<br>ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>a<br>**----- End of picture text -----**<br>


## TO-220AB Part Marking Information 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/03 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

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For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF520NPBF/power-mosfet-n-channel-100-v-97-a-02-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf520npbf/mosfet-n-100v-9-7a-to-220ab/dp/9103031)
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