# Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1298511/)

**URL**: https://novapart.co/products/IRF4905STRLPBF/power-mosfet-p-channel-55-v-74-a-002-ohm-to-263
**SKU**: IRF4905STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1000
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipat

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 20V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 74A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298511/)

PD - 97034 

## IRF4905SPbF IRF4905LPbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free 

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||||||
|---|---|---|---|---|
|Ultra Low On-Resistance|D|VDSS = -55V|
|150°C Operating Temperature|
|Fast Switching|R|= 20mΩ|
|DS(on)|
|Repetitive Avalanche Allowed up to Tjmax|G|
|Some Parameters Are Differrent from|
|IRF4905S|S|ID = -42A|
|Lead-Free|
|Description|D|D|
|Features of this design  are a 150°C junction oper-|
|ating temperature, fast switching speed and im-|
|proved repetitive avalanche rating . These features|S|S|
|D|D|
|combine to make this design an extremely efficient|G|G|
|and reliable device for use in  a wide variety of other|D|[2]|Pak|TO-262|
|applications.|IRF4905SPbF|IRF4905LPbF|
|G|D|S|
|ee|
|es|Gate|Drain|Source|
|Absolute Maximum Ratings|
|To|Parameter|Max.|Units|
|SO|ID @ TC = 25°C|Continuous Drain Current, VGS @ 10V (Silicon Limited)|-70|EE|
|ID @ TC = 100°C|Continuous Drain Current, VGS @ 10V (Silicon Limited)|-44|A|
|SO|ID @ TC = 25°C|Continuous Drain Current, VGS @ 10V (Package Limited)|-42|
|LSne|IDM|O|Pulsed Drain Current|-280|
|LC|PD @TC = 25°C|Power Dissipation|170|W|
|Oa|Linear Derating Factor|1.3|W/°C|
|Oa|VGS|Gate-to-Source Voltage|± 20|V|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|140|mJ|
|aeS|EAS (Tested )|Single Pulse Avalanche Energy Tested Value|790|
|a|IAR|Avalanche Current|See Fig.12a, 12b, 15, 16|A|
|EAR|Repetitive Avalanche Energy|mJ|
|TJ|Operating Junction and|-55  to + 150|
|a|TSTG|Storage Temperature Range|°C|
|ee|Soldering Temperature, for 10 seconds|300 (1.6mm from case )|
|CG|Mounting Torque, 6-32 or M3 screw|10 lbf|in (1.1N|m)|
|Thermal Resistance|
|a|Parameter|Typ.|Max.|Units|
|a|RθJC|Junction-to-Case|–––|0.75|
|RθJA|Junction-to-Ambient (PCB Mount, steady state)|–––|40|
|ee|rt|
|www.irf.com|1|

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## **Description** 

Features of this design  are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in  a wide variety of other applications. 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~es~~<br>~~Po~~<br>~~lTeiaisi‘“esstdt~~|**Parameter**<br>~~es~~<br>~~lTeiaisi‘“esstdt~~|**Min.**<br>~~Ge~~<br>~~lTeiaisi‘“esstdt~~|**Typ.**<br>~~Gn~~<br>~~lTeiaisi‘“esstdt~~|**Max. **<br>~~(es~~<br>~~ll~~|**Units**<br>~~Ge~~<br>~~ll~~|**Conditions**<br>~~ll~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~<br>~~Po~~<br>~~lTeiaisi‘“esstdt~~|Drain-to-Source Breakdown Voltage<br>~~es ~~<br>~~lTeiaisi‘“esstdt~~|-55<br> ~~Ge ~~<br>~~lTeiaisi‘“esstdt~~|–––<br> ~~Gn ~~<br>~~lTeiaisi‘“esstdt~~|–––<br> ~~(es ~~<br>~~ll~~|V<br> ~~Ge~~<br>~~ll~~|VGS= 0V, ID= -250µA<br>~~ll~~|
|∆V(BR)DSS/∆TJ<br>~~Po~~<br>~~lTeiaisi‘“esstdt~~<br>~~es~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~lTeiaisi‘“esstdt~~<br>~~rs~~<br>~~ey~~|–––<br>~~lTeiaisi‘“esstdt~~<br>~~Ge~~<br>~~Gs~~|-0.054<br>~~lTeiaisi‘“esstdt ~~<br>~~Gs~~<br>~~ns~~|–––<br> ~~ll~~<br>~~Gs~~<br>~~Gs~~|V/°C<br>~~ll~~<br>~~Ge~~|Reference to 25°C, ID= -1mA<br>~~ll~~|
|RDS(on)<br>~~es~~<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~rs ~~<br>~~ey~~|–––<br> ~~Ge ~~<br>~~Gs~~|–––<br> ~~Gs ~~<br>~~ns~~|20<br> ~~Gs ~~<br>~~Gs~~|mΩ<br> ~~Ge~~|VGS= -10V, ID= -42A|
|VGS(th)<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate Threshold Voltage<br>~~ey ~~<br>~~rs~~<br>~~ns~~|-2.0<br> ~~Gs ~~<br>~~Ge~~<br>~~Gn~~|–––<br> ~~ns ~~<br>~~Gs~~<br>~~ns~~|-4.0<br> ~~Gs~~<br>~~Gs~~<br>~~Gs~~|V<br>~~Ge~~|VDS= VGS, ID= -250µA|
|gfs<br>~~es~~<br>~~ee~~|Forward Transconductance<br>~~rs ~~<br>~~ns~~<br>~~|~~|19<br> ~~Ge ~~<br>~~Gn~~<br>~~RE~~<br>~~|~~|–––<br> ~~Gs ~~<br>~~ns~~<br>~~RE~~|–––<br> ~~Gs ~~<br>~~Gs~~<br>~~RE~~|S<br> ~~Ge~~|VDS= -25V, ID= -42A|
|IDSS<br>~~ee~~<br>~~op~~|Drain-to-Source Leakage Current<br>~~ns ~~<br>~~op~~<br>~~|~~|–––<br> ~~Gn~~<br>~~op~~<br>~~RE~~<br>~~|~~|–––<br>~~ns ~~<br>~~op~~<br>~~RE~~|-25<br> ~~Gs~~<br>~~op~~<br>~~RE~~|µA<br>~~op~~<br>|VDS= -55V, VGS= 0V<br>~~op~~|
|||–––<br>~~op~~<br>~~RE~~<br>~~|~~<br>~~|~~|–––<br>~~op~~<br>~~RE~~<br>~~|~~|-200<br>~~op~~<br>~~RE~~<br>~~|~~||VDS= -44V, VGS= 0V, TJ= 125°C<br>~~op~~<br>~~Po~~|
|IGSS<br>~~op~~<br>~~————————————_——EE~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~op~~<br>~~|~~<br>~~————————————_——EE~~<br>~~**e**s~~|–––<br>~~op~~<br>~~RE~~<br>~~|~~<br>~~| ~~<br>~~————————————_——EE~~<br>~~ee Gs~~|–––<br>~~op~~<br>~~RE~~<br> ~~|~~<br>~~————————————_——EE~~<br>~~Gs~~|100<br>~~op~~<br>~~RE~~<br>~~| ~~<br>~~————————————_——EE~~|nA<br>~~op~~<br> <br>~~————————————_——EE~~|VGS= -20V<br>~~op~~<br> ~~Po~~<br>~~————————————_——EE~~<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~————————————_——EE~~<br>~~**e**s~~|–––<br>~~————————————_——EE~~<br>~~ee Gs~~|–––<br>~~————————————_——EE~~<br>~~Gs~~|-100<br>~~————————————_——EE~~||VGS= 20V<br>~~————————————_——EE~~<br>~~Po~~|
|Qg<br>~~————————————_——EE~~<br>~~a~~<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~————————————_——EE~~<br>~~**e**s ~~<br>~~e~~<br>|–––<br>~~————————————_——EE~~<br> ~~ee Gs~~<br>~~e~~<br>~~Ge~~<br><br>~~es~~|120<br>~~————————————_——EE~~<br>~~Gs~~<br>~~e~~<br>~~Ge~~<br><br>~~es~~|180<br>~~————————————_——EE~~<br>~~e~~<br>|nC<br>~~————————————_——EE~~|ID= -42A<br>VDS= -44V<br>VGS= -10V<br>~~————————————_——EE~~<br>~~Po~~<br>)|
|Qgs<br>~~ee~~<br>~~a~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~Ge~~<br>~~es~~<br>~~es~~|32<br>~~Ge~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qgd<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~ee~~<br><br>|–––<br>~~Ge ~~<br>~~es~~<br>~~es ~~<br>~~Ge~~<br><br>~~es Ge~~<br>|53<br> ~~Ge~~<br>~~es~~<br> ~~es~~<br>~~Ge~~<br><br>~~Ge~~<br>|–––<br>~~es~~<br><br>|||
|td(on)<br>~~ee~~<br>~~a~~|Turn-On DelayTime<br>~~ee~~<br>~~es~~<br>|–––<br>~~Ge~~<br>~~es~~<br>~~es Ge~~<br>|20<br>~~Ge~~<br>~~es~~<br>~~Ge~~<br>|–––<br>~~es~~<br>|ns|VGS= -10V<br>VDD= -28V<br>ID= -42A<br>RG= 2.6Ω<br>)|
|tr<br>~~ee~~<br>~~a ~~<br>~~ee~~<br>~~a~~|Rise Time<br>~~ee ~~<br>~~es~~<br> ~~ee~~<br>|–––<br> ~~Ge ~~<br>~~es~~<br>~~es Ge~~<br>~~ee~~<br>~~Ge~~<br><br>~~es~~|99<br> ~~Ge~~<br>~~es~~<br>~~Ge~~<br>~~ee~~<br>~~Ge~~<br><br>~~Ge~~|–––<br>~~es~~<br>~~ee~~<br>|||
|td(off)<br>~~ee~~<br>~~a~~|Turn-Off DelayTime<br>~~es~~|–––<br>~~Ge~~<br>~~es~~<br>~~es~~|51<br>~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|tf<br>~~ee~~<br>~~a~~|Fall Time<br>~~es~~|–––<br>~~Ge ~~<br>~~es~~<br>~~es~~|64<br> ~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|LS<br>~~a~~<br>~~ee~~<br>~~a~~|Internal Source Inductance<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>~~es Ge~~<br>|7.5<br>~~Ge~~<br>~~es~~<br>~~Ge~~<br>|–––<br>~~es~~<br>|nH|Between lead,<br>and center of die contact|
|Ciss<br>~~ee~~<br>~~a~~|Input Capacitance<br>~~es~~<br>|–––<br>~~es~~<br>~~es Ge~~<br>|3500<br>~~es~~<br>~~Ge~~<br>|–––<br>~~es~~<br>|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz|
|Coss<br>~~ee~~<br>~~a ~~<br>~~ee~~<br>~~a~~|Output Capacitance<br>~~es~~<br> ~~ee~~<br>|–––<br>~~es~~<br>~~es Ge~~<br>~~ee~~<br>~~Ge~~<br><br>~~es Ge~~|1250<br>~~es~~<br>~~Ge~~<br>~~ee~~<br>~~Ge~~<br><br>~~Ge~~|–––<br>~~es~~<br>~~ee~~<br>|||
|Crss<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~Ge~~<br>~~es~~<br>~~es Ge~~|450<br>~~Ge~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|Coss<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~a~~|Output Capacitance<br>~~es~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~Ge ~~<br>~~es~~<br>~~es Ge~~<br>~~Ge~~<br>~~es~~<br>|4620<br> ~~Ge~~<br>~~es~~<br>~~Ge~~<br>~~Ge~~<br>~~es~~<br>|–––<br>~~es~~<br>||VGS= 0V,  VDS= -1.0V,  ƒ = 1.0MHz<br>~~PO~~<br>~~Po~~|
|Coss<br>~~ee~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~es~~<br>|–––<br>~~Ge~~<br>~~es~~<br>|940<br>~~Ge~~<br>~~es~~<br>|–––<br>||VGS= 0V,  VDS= -44V,  ƒ = 1.0MHz<br>~~PO~~<br>~~Po~~|
|Cosseff.<br>~~ee~~<br>~~a ~~|Effective Output Capacitance<br>~~ee ~~<br>~~es ~~<br> ~~ee~~|–––<br> ~~Ge ~~<br> ~~es ~~<br>~~ee~~<br>~~Ge~~|1530<br> ~~Ge~~<br> ~~es~~<br>~~ee~~<br>~~Ge~~|–––<br>~~ee~~||VGS= 0V, VDS= 0V to -44V<br>~~PO~~<br>~~Po~~|



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1000<br>Se ee Se VGS |<br>Ea ee TOP           -15V i<br>-10V<br>-8.0V<br>-7.0V<br>-6.0V<br>100 nib iil Ziimn -5.5V-5.0V |<br>ge ETM BOTTOM -4.5V<br>| ot el<br>10<br>AAC ECV<br>-4.5V<br>Yami, it ≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>1 aN aall |<br>0.1 ail 1 nyOr 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.0<br>TJ = 25°C<br>See eeeeeeee<br>100.0 PTevan| AA I TJ = 150°C<br>10.0<br>ay 40<br>S/S eeee<br>2 ee<br>1.0<br>AL = SS ee ee ee ee eee eee eee eee eee eee<br>VDS = -25V<br>≤ 60µs PULSE WIDTH<br>0.1<br>3 4 5 6 7 8 9 10 11 12 13 14<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>)(Α<br>-ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000 een elt ee VGS<br>TOP           -15V<br>-10V<br>-8.0V<br>-7.0V<br>-6.0V<br>yi -5.5V<br>100 ao -5.0V<br>))Za BOTTOM -4.5V<br>Yaoe<br>10<br>-4.5V<br>mernieeniiieaiiiil<br>y ≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>1<br>0.1 A 1 10 100 1000<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>40<br>TJ = 25°C<br>30<br>=<br>A TJ = 150°C<br>20 L<br>Ve<br>10<br>VDS = -10V<br>380µs PULSE WIDTH<br>0<br>0 20 40 60 80<br>-ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>-ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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7000 20<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID= -42A<br>60005000 CCrss  oss   = C= Cds gd + Cgd 16 VVDS= -28VVDS= -11VDS= -44V<br>To] Ee<br>12<br>4000 Ciss<br>3000 SnoPNOTUMSETIN 8 -4+-4|yh<br>Coss<br>2000<br>|| 4 =<br>1000 Crss<br>i ale 0 71<br>0<br>0 40 80 120 160 200<br>1 10 100<br> QG  Total Gate Charge (nC)<br>-VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 | | AT PPP<br>a TJ = 150°C 100 ea 1 00µsec re<br>1 mse c<br>10.0<br>p f P en e Aee 10 m sec<br>e e 10 LIMITED BY PACKAGE |<br>1.0 TJ = 25°C ee ed DC<br>ee Tc = 25°CTj = 150°C<br>VGS = 0V Single Pulse<br>0.1 1<br>0.0 0.4 0.8 1.2 1.6 2.0 0 1 10 100<br>-VSD, Source-to-Drain Voltage (V) -VDS  , Drain-toSource Voltage (V)<br>-ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>-VGS, Gate-to-Source Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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80 2.0<br>LIMITED BY PACKAGE ID = -42A<br>VGS = -10V<br>60<br>4a 1.5 EEE<br>40<br>pp L f AT<br>1.0<br>TN LTT<br>20<br>0<br>0.5<br>25 50 75 100 125 150<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>1<br>ee<br>D = 0.50<br>Po<br>0.20<br>0.1 srr |<br>6 0.100.05 eso ==ee [ati] mm R e 1 R1 R2 R2 ee II R r 3R3 Ri (°C/W)    eeeLIHH  τi (sec)<br>τJ τJ τCτ 0.1165     0.000068<br>0.020.01 τ1τ1 τ2 τ2 τ3τ3 0.3734     0.002347<br>0.01 — Ci= τi/Ri 0.2608     0.014811<br>Ci τi/Ri<br>a oa<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>-ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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VDS L<br>RGG _ D.U.T VDDDD<br>IASAS<br>-20V DRIVER<br>tpp 0.01ΩΩ<br>efit.<br>15V<br>Fig 12a.   Unclamped Inductive Test Circuit<br>IASAS<br>a<br>\<br>tp<br>V(BR)DSS(BR)DSS<br>**----- End of picture text -----**<br>


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600<br>RGG _ D.U.T VDDDD                  ITOP   -17AD<br>-20V IASAS DRIVER A 500                -30A<br>tpp 0.01ΩΩ BOTTOM   -42A<br>efit. KEE<br>400<br>300<br>PNT ft<br>15V<br>200<br>EN<br>Fig 12a.   Unclamped Inductive Test Circuit<br>IASAS 100<br>a SOA<br>\ 0 _ Se<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>tp<br>V(BR)DSS(BR)DSS<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br>QG<br>3.6<br>QGS QGD<br>VG<br>3.2<br>7<br>Charge ~<br>ID = -250µA<br>Fig 13a.   Basic Gate Charge Waveform 2.8<br>Current Regulator<br>Same Type as D.U.T.<br>we) 50KΩ 2.4 TINE<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>ETTTHeS<br>2.0<br>VGS -75 -50 -25 0 25 50 75 100 125 150<br>me PONE<br>-3mA TJ , Temperature ( °C )<br>oe |<br>IG ID<br>Current Sampling Resistors<br>EAS, Single Pulse Avalanche Energy (mJ)<br>-VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 14.** Threshold Voltage Vs. Temperature 

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**Fig 13b.** Gate Charge Test Circuit 6 

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1000 a a a ee ee ee  ee ee ee ee se  Oe ee Oe Os<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>SSF 0.01  IUIEIE avalanche  CHEE pulsewidth,  tav<br>| P|RN 0.05 Re TELL eee ee ee assuming avalanche losses. Note: In no ∆Tj = 25°C due to  inlean<br>10 |__| 0.10 a es case should Tj be allowed to  LT<br>exceed Tjmax<br>—— Silla === —— — = eek ee iSeE:<br>a ee ee|<br>a et ee een<br>1<br>0.1 ee 0 0<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>160 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = -42A   Purely a thermal phenomenon and failure occurs at a<br>120     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>80 NUE 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>40 PNGaNS 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>7. ∆T = Allowable rise in junction temperature, not to exceed<br>0 ELT PSSSS     Tjmax (assumed as 25°C in Figure 15, 16).<br>  tav = Average time in avalanche.<br>25 50 75 100 125 150   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>Period D =<br>+ P.W. Period<br>D.U.T** LO | I | t<br>VGS=10V<br>) ®@    •  Circuit Layout Considerations |<br>| | -  •   GroundLow StrayPlane Inductance<br> •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oat - Current Transformer - ® + Current r Current di/dt NN<br>00 1) D.U.T. VDS Waveform Diode Recovery -y<br>dv/dt ‘ VDD<br>jy<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (f aa •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test es<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for P-Channel 

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-<br>+<br>≤ 1  us<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


## **Fig 18a.** Switching Time Test Circuit 

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td(on) tr td(off) tf<br>VGS + > <e<br>\<br>10%<br>|<br>90%<br>VDS<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL ee<br>ASSEMBLED ON WW 02, 2000 RECTIFIER \ F530S<br>IN THE ASSEMBLY LINE "L" LOGO TEAR 0021 we<br>position indicates "Lead-Free"Note: "P" in assembly line ASSEMBLYLOT CODE ~— 8024TuyTentU U DATE CODEYEAR 0 =  2000WEEK 02LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL SO<br>RECTIFIER \ F530S<br>LOGO TEAR POO<br>80 24) DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE «Tuyyoi oo YEAR 0 =  2000PRODUCT (OPTIONAL)<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline (Dimensions are shown in millimeters (inches)) 

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IGBT<br>1- GATE<br>2- COLLECTOR<br>3- EMITTER<br>4- COLLECTOR<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONALRECTIFIER oy<br>IN THE ASSEMBLY LINE "C" LOGO \. |TORiri 310317190<br>Note: "P" in assembly line 1789 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIERLOGO \. |TOR?iri3t0379<br>17 B9 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961)3 4<br>**----- End of picture text -----**<br>


Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive 

Repetitive rating;  pulse width limited by 

max. junction temperature. (See fig. 11). avalanche performance. @ Limited by TJmax, starting TJ = 25°C, L = 0.16mH © This value determined from sample failure population. 100% RG = 25Ω, IAS = -42A, VGS =-10V. Part notG = 25Ω, IAS = -42A, VGS =-10V. Part not= 25Ω, IAS = -42A, VGS =-10V. Part notΩ, IAS = -42A, VGS =-10V. Part not, IAS = -42A, VGS =-10V. Part notAS = -42A, VGS =-10V. Part not= -42A, VGS =-10V. Part notGS =-10V. Part not =-10V. Part not tested to this value in production. 

RG = 25Ω, IAS = -42A, VGS =-10V. Part notG = 25Ω, IAS = -42A, VGS =-10V. Part not= 25Ω, IAS = -42A, VGS =-10V. Part notΩ, IAS = -42A, VGS =-10V. Part not, IAS = -42A, VGS =-10V. Part notAS = -42A, VGS =-10V. Part not= -42A, VGS =-10V. Part notGS =-10V. Part not =-10V. Part not recommended for use above this value. 

® This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

©) Pulse width ≤ 1.0ms; duty cycle ≤ 2%. @ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

θ 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/05 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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