# Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648190/)

**URL**: https://novapart.co/products/IRF4905PBF/power-mosfet-p-channel-55-v-74-a-002-ohm-to-220ab
**SKU**: IRF4905PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7370
**Stock**: 1000+
**Lead Time**: 71 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 74A |
| Drain Source On State Resistance | 0.02ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648190/)

PD - 94816 

## IRF4905PbF 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free 

## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. 

## HEXFET[®] Power MOSFET 

**==> picture [188 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>VDSS = -55V<br>R  = 0.02Ω<br>DS(on)<br>G<br>ID = -74A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** ~~Fe~~ ,...._._ **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -74 ~~— |v~~ ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -52 A a IDM Pulsed Drain Current -260 ~~o>~~ PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C ~~Sg~~ VGS Gate-to-Source Voltage ± 20 V ~~Sg oo~~ EAS Single Pulse Avalanche Energy 930 mJ ~~a~~ IAR Avalanche Current -38 A ~~©~~ EAR Repetitive Avalanche Energy 20 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~OOpf~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~a~~ Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) **Thermal Resistance Parameter Typ. Max. Units** RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 11/6/03 

## IRF4905PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|~~es~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min. **<br>ee<br>~~ee~~<br>~~ee~~|**Typ. **<br>ee<br>~~es~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~es~~|-55<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|-0.05<br>~~ee~~|–––<br>~~ee~~|V/°C<br>~~ee~~|Reference to 25°C, ID= -1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|–––|0.02|Ω|VGS= -10V, ID= -38A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~ee~~|-2.0<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>|-4.0<br>~~es~~<br>|V<br>~~es~~<br>|VDS= VGS, ID= -250µA<br>~~®~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~ee~~|21<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>|–––<br>~~ee~~<br>|S<br>~~ee~~<br>|VDS= -25V, ID= -38A|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~eee~~|–––<br>~~eee~~|-25<br>~~eee~~|µA<br>~~eee~~<br>~~a~~|VDS= -55V, VGS= 0V|
|||–––<br>~~ee~~<br>~~eee~~<br>~~a~~|–––<br>~~eee~~<br>~~a~~|-250<br>~~eee~~<br>~~a~~||VDS= -44V, VGS= 0V, TJ= 150°C<br>~~a~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee ~~<br>~~a~~<br>~~ee~~|–––<br>~~ee~~<br> <br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br><br>~~a~~<br>~~ee~~|100<br><br>~~a~~<br>~~ee~~|nA<br><br>~~a~~<br>~~_~~<br>~~ee~~|VGS= 20V<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~||VGS= -20V|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|180<br>~~ee~~|nC<br>~~ee~~|ID= -38A<br>VDS= -44V<br>VGS= -10V, See Fig. 6 and 13<br>°|
|Qgs<br>a~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––|–––|32|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––|–––|86|||
|td(on)<br>~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|18<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~jE~~|VDD= -28V<br>ID= -38A<br>RG= 2.5Ω<br>RD= 0.72Ω,See Fig. 10<br>°<br>,|
|tr<br>~~ee~~<br>~~a~~<br>PR|Rise Time<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>|99<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|td(off)<br>PR|Turn-Off Delay Time<br>|–––<br>|61<br>|–––<br>|||
|tf<br>PR~~jE~~|Fall Time<br>~~jE~~|–––<br>~~jE~~|96<br>~~jE~~|–––<br>~~jE~~|||
|LD<br>~~jE~~|Internal Drain Inductance<br>~~jE~~|–––<br>~~jE~~|4.5<br>~~jE~~|–––<br>~~jE~~|nH<br>~~jE~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>,|
|LS<br>~~jE~~<br>~~pf~~|Internal Source Inductance<br>~~jE~~<br>~~pf~~|–––<br>~~jE~~|7.5<br>~~jE~~|–––<br>~~jE~~|nH<br>~~jE~~||
|Ciss<br>~~pf~~|Input Capacitance<br>~~pf~~|–––|3400|–––|pF<br>~~es~~<br>~~es~~|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~pf~~<br>~~es~~|Output Capacitance<br>~~pf~~<br>~~es~~|–––<br>~~es~~<br>ee|1400<br>~~es~~|–––<br>~~es~~|||
|Crss<br>a|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>ee|640<br>~~es~~|–––<br>~~es~~|||



## **Notes:** 

Oo Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

@ Starting TJ = 25°C, L = 1.3mH RG = 25Ω, IAS = -38A. (See Figure 12) 

ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

## IRF4905PbF 

**==> picture [432 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>                   VGS                     VGS<br> TOP          - 15V  TOP          - 15V<br>                  - 10V ee                   - 10V ee<br>                  - 8.0V a                   - 8.0V eee<br>                  - 7.0V a ee                   - 7.0V LsEE a<br>                  - 6.0V                   - 6.0V<br>                  - 5.5V                   - 5.5V<br>                  - 5.0V                   - 5.0V<br> BOTTOM  - 4.5V eT  BOTTOM  - 4.5V ee<br>100 Po | ge 100 sll<br>a ee ee 2S 7 __ =>" eee ee nn Se ne<br>eeTEAee) Zeeeeeee Pna 7, A_ ae ee ee ee<br>ee 2 2 ee ee Ee, AS el<br>| | | fn oo pt ee<br>10 | fp$sf——;—-Z  -4.5V | 10 f{yr mS -4.5V l<br>fp oe nw<br>Ye | LB s<br>C7 a Se eet | fff $e<br>fy A) ee yyy<br>YA) iii Cf La Se<br> 20µs PULSE WIDTH   20µs PULSE WIDTH<br>1 Tmt  T   = 25°Cc | A 1 PTO  T   = 175°CC<br>0.1 1 10 100 0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

## **Fig 2.** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
1000<br>a=aee eeee SSeSee ee ee eeeee eee<br>a ee ee es se ee<br>T  = 25°CJ<br>100 | —_<br>Se ee SS e eeeeSr<br>rr re ae T  = 175°CJ yd<br>ee ae ee ee ee ee<br>10 ‘fi/ A ee{|ee{[ |ee|]<br>> A ee ee es ee es ee ee ee eee<br>y | | | UT<br> V     = -25VDS<br>1 Pe  20µs PULSE WIDTH<br>4 5 6 7 8 9 10<br>-V     , Gate-to-Source Voltage (V)GS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.0<br> I    = -64AD<br>P E<br>A #|<br>1.5 An| Wa<br>1.0<br>> ral<br>Pa ae<br>0.5<br>0.0 PEE EEE EE EEE  V      = -10V GS<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


## **Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

## IRF4905PbF 

**==> picture [432 x 476] intentionally omitted <==**

**----- Start of picture text -----**<br>
7000 20<br>V      = 0V,         f = 1MHzGS  I    = -38AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>6000 pe C      = CC      = rss         gdoss        ds         gdC     + C 16 Pp | te  V      = -44V V      = -28VDSDS<br>5000 a SE P| | <p<br>C iss<br>PN | |<br>PN 12 Py A<br>4000<br>C oss<br>PSSST) 4<br>3000<br>8<br>SLC |  EET<br>2000 a | aS[oy 4enen<br>C rss<br>| 4 fro tt<br>1000<br>se ee S| AT<br> FOR TEST CIRCUIT<br>0 Ia A 0 | ftAPTET     SEE FIGURE 13<br>1 10 100 0 40 80 120 160 200<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>RSSor = wa uyth ah: hs<br>100 ARR 100<br>GE D> ce ee eet<br>TF T  = 175°CJ aSnel oe e ee 100µs lee<br>T  = 25°CJ<br>1ms<br>10 nwanaAf | |_ | || | ||| 10 CesT N ll<br>10ms<br> T     = 25°CC<br> T     = 175°CJ<br>1 (eePetirt tit fy e V      = 0V GS A 1 p  Single Pulse OOll e<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100<br>-V     , Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>D<br>-I   , Drain Current (A)<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

## IRF4905PbF 

**==> picture [201 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 SEE<br>60 PERNPLN E<br>PLE EEE NE EE<br>40 \<br>20<br>Saaeeeeeeeee<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureCC (  C)°°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
RD<br>VDS<br>VGS<br>D.U.T.<br>RG<br>+- VDD<br>-10V<br>omelF<br>Pulse Width ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**==> picture [423 x 328] intentionally omitted <==**

**----- Start of picture text -----**<br>
td(on) tr td(off) tf<br>VGS<br>0 Saaeeeeeeeee 10% oT| foA<br>25 50 75 100 125 150 175 ‘<br>T   , Case TemperatureCC (  C)°°<br>90% a//<br>Fig 9.   Maximum Drain Current Vs. VDS ee,<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 ss YT<br>Eeeen ee ee eeeneaee ee nl<br>D = 0.50<br>P a aee<br>e 0.20 = ete ee ell<br>TeiA [rrr]<br>0.1 O 0.10 E<br>or 0.05 = 2 2 ee eee ee eee PDM<br>come = a t1<br>0.02 SINGLE PULSE t2<br>= 0.01 (THERMAL RESPONSE) Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

## IRF4905PbF 

**==> picture [209 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
2500<br>                    ID<br>TOP            -16A<br>2000 NeneVee COE                    -27ABOTTOM    -38A<br>PN |<br>1500 PIN<br>1000<br>Np [NE] EE<br>NONE KGRE EEE<br>500<br>|p AAA NO<br>Pot SEN<br>P| rE USS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)JJ<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**==> picture [155 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS L<br>RG D.U.T I. VDD<br>IAS<br>an -20V “ DRIVER :<br>tp 0.01Ω<br>15V<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [398 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>Starting T  , Junction Temperature (°C)JJ<br>Fig 12c.   Maximum Avalanche Energy<br>\ ||<br>Vs. Drain Current<br>‘|<br>\<br><¢<— tp<br>V(BR)DSS<br>Fig 12b.   Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>— — — rend .3µF<br>-10V<br>—LhLii -<br>QGS QGD D.U.T. +VDS<br>VGS<br>VG<br>-3mA<br>If & |<br>Ont.<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

## IRF4905PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

**==> picture [302 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
D.U.T * + Circuit Layout Considerations<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>|(faa)|« -       Current Transformer<br>+<br>ae<br>- - +<br>a<br>00<br>RG •  dv/dt controlled by RG +<br>s e ; •  ISD controlled by Duty Factor "D" - V DD<br>•  D.U.T. - Device Under Test<br>VGS<br>**----- End of picture text -----**<br>


- Reverse Polarity of D.U.T for P-Channel 

**==> picture [296 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
O) Driver Gate Drive<br>P.W.<br>Period D =<br>ee P.W. Period<br>t<br>[          ] ***VGS=10V<br>\<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt fn<br>® D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>[    ]VDD<br>ma<br>Re-Applied YT<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% [    ]ISD<br>**----- End of picture text -----**<br>


- *** VGS = 5.0V for Logic Level and 3V Drive Devices 

**Fig 14.** For P-Channel HEXFETS 

## IRF4905PbF 

## TO-220AB Package Outline 

Dimensions are shown in millimeters (inches) 

**==> picture [341 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| oc ~ 1.22 (.048)<br>6.47 (.255)<br>rt = 4 “| 6.10 (.240)<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| dar_ 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [1.40 (.055)] 1.15 (.045) 3X0.36  (.014)        M    B   A   M [0.93 (.037)] 0.69 (.027) T 2.92 (.115)3X [0.55 (.022)] 0.46 (.018)<br>2.64 (.104)<br>2.54 (.100) || I<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

## TO-220AB Part Marking Information 

**==> picture [316 x 69] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER<br>IN THE ASSEMBLY LINE "C" RECTIFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DATE CODE<br>ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International TER Rectifier TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/03 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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