# Power MOSFET, StrongIRFET™, N Channel, 40 V, 201 A, 0.0014 ohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:2781108/)

**URL**: https://novapart.co/products/IRF40H210/power-mosfet-strongirfettm-n-channel-40-v-201-a
**SKU**: IRF40H210
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 125W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0014ohm |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 201A |
| Drain Source On State Resistance | 0.0014ohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781108/)

## International ~~TOR Rectifier~~ 

## **Application** 

-  Brushed Motor drive applications 

-  BLDC Motor drive applications 

-  Battery powered circuits 

-  Half-bridge and full-bridge topologies 

-  Synchronous rectifier applications 

-  Resonant mode power supplies 

-  OR-ing and redundant power switches 

## Strong _IR_ FET™ IRF40H210 ~~po~~ 

## HEXFET[® ] Power MOSFET 

|**VDSS**|**40V**|
|---|---|
|**RDS(on)typ.**<br>**max**|**1.4m**|
||**1.7m**|
|**ID (Silicon Limited)**|**201A**|
|**ID (Package Limited)**|**100A**|



-  DC/DC and AC/DC converters 

-  DC/AC Inverters 

## **Benefits** 

-  Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

-  Fully Characterized Capacitance and Avalanche SOA 

-  Enhanced body diode dV/dt and dI/dt Capability 

-  Lead-Free, RoHS Compliant 

PQFN 5 x 6 mm 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRF40H210|PQFN 5mm x 6mm|Tape and Reel|4000|IRF40H210|



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6 225<br>ID = 100A 200<br>5 UT LL ~<—}_|_+_+—<br>175 Pee Limited by package<br>4 ULE [ELL] 150 nafTae<br>125<br>3<br>SI GHRHERE TJ = 125°C 100 ae<br>2 75<br>50<br>1 Net FN<br>4 TJ = 25°C 25 ee<br>0 PLLLLEL [Le] 0 aee<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage **Fig 2.** Maximum Drain Current vs. Case Temperature 

1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback                   April 1, 2015 ~~cs~~ 

IRF40H210 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**||**Max.**|**Units**|
|---|---|---|---|---|---|
|ID @TC(Bottom)= 25°C Continuous Drain Current||= 25°C Continuous Drain Current,VGS @10V||201||
|ID @TC(Bottom)= 100°C Continuous Drain Current<br>ID @TC(Bottom)= 25°C Continuous Drain Current||= 100°C Continuous Drain Current,VGS @10V<br>= 25°C Continuous Drain Current,VGS @10V(Wire Bond Limited)||127<br>100|A|
|IDM||Pulsed Drain Current||400*||
|PD @TC= 25°C||Maximum Power Dissipation||125|W|
|||Linear DeratingFactor||1.0|W/°C|
|VGS||Gate-to-Source Voltage||± 20|V|
|TJ<br>TSTG||Operating Junction and<br>Storage Temperature Range||-55  to + 150|°C|
||**Avalanche Characteristics**|||||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>149<br>mJ<br>EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>370<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br>~~—SS=— EE~~||||||
||**Symbol**|**Parameter**|**Typ.**<br>**Max.**||**Units**|
||RJC(Bottom)|Junction-to-Case|–––<br>1.0|||
||RJC (Top)|Junction-to-Case|–––<br>18||°C/W|
||RJA|Junction-to-Ambient|–––<br>33|||
||RJA (<10s)|Junction-to-Ambient|–––<br>20|||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max. Units**|**. Max. Units**|**. Max. Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|40|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|42|–––|mV/°C Reference to 25°C, I|mV/°C Reference to 25°C, ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|1.4|1.7|m|VGS= 10V,ID= 100A|
|||–––|2.3|–––||VGS= 6.0V,ID= 50A|
|VGS(th)|Gate Threshold Voltage|2.2|–––|3.7|V|VDS= VGS,ID= 150µA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS= 40 V,VGS= 0V|
|||–––|–––|150||VDS= 40V,VGS= 0V,TJ=125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|2.6|–––|||



## **Notes:** 

- Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with 

- some lead mounting arrangements. (Refer to AN-1140) 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-  Limited by TJmax, starting TJ = 25°C, L = 0.030mH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  1117A/µs, VDD  V(BR)DSS, TJ 150°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-    R is measured at TJ approximately 90°C. 

-     When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: 

- - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-    Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 27A, VGS =10V. 

- Pulse drain current is limited by source bonding technology. 

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IRF40H210 ~~[_~~ 

**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~pO~~|**Parameter**<br>~~pO~~|**Min.**<br>~~pO~~|**Typ. **<br>~~pO~~|**Max. Units**<br>~~pO~~|**Max. Units**<br>~~pO~~|**Max. Units**<br>**Conditions**<br>~~pO~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|113|–––|–––|S|VDS= 10V,ID= 100A|
|Qg<br>~~a~~|Total Gate Charge|–––|101|152|nC|ID= 100A<br>VDS= 20V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|30|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge|–––|31|–––|||
|Qsync<br>~~a~~<br>~~a~~|Total Gate Charge Sync.(Qg–Qgd)<br>|–––<br>|70<br>|–––<br>|||
|td(on)<br>~~sO~~|Turn-On DelayTime<br>~~sO~~|–––<br>~~sO~~|9.2<br>~~sO~~|–––<br>~~sO~~|ns<br>~~a~~|VDD= 20V<br>ID= 30A<br>RG= 2.7<br>VGS= 10V<br>~~a~~|
|tr<br>~~a~~|Rise Time<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|25<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|65<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|tf|Fall Time|–––|34|–––|||
|Ciss|Input Capacitance|–––|5406|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7|
|Coss|Output Capacitance|–––|805|–––|||
|Crss|Reverse Transfer Capacitance|–––|518|–––|||
|Coss eff.(ER)<br>~~a~~|Effective Output Capacitance<br>(Energy Related)<br>~~a~~|–––<br>~~a~~|962<br>~~a~~|–––<br>~~a~~||VGS= 0V, VDS = 0V to 32V|
|Coss eff.(TR)<br>~~GD~~|Output Capacitance (Time Related)<br>~~GD~~|–––<br>~~GD~~|1179<br>~~GD~~|–––<br>~~GD~~||VGS= 0V, VDS = 0V to 32V|
|**Diode Characteristics**|||||||
|**Symbol**<br>~~pf~~|**Parameter**<br>~~pf~~|**Min.**<br>~~pf~~|**Typ.**<br>~~pf~~|**Max. Units**<br>~~pf~~|**Max. Units**<br>~~pf~~|**Max. Units**<br>**Conditions**<br>~~pf~~|
|IS<br>~~SSS~~|Continuous Source Current<br>(BodyDiode)<br>~~SSS~~|–––<br>~~SSS~~|–––|100|A<br>~~OO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~ee~~|
|ISM<br>~~SSS~~|(odyode)<br>Pulsed Source Current<br>(BodyDiode)<br>~~SSS~~|–––<br>~~SSS~~|–––|400*<br>~~OO~~|||
|VSD<br>~~a DG~~|Diode Forward Voltage<br>~~DG~~|–––<br>~~DG~~|0.8<br>~~DG~~|1.2<br>~~DG~~<br>~~OO~~|V<br>~~DG~~<br>~~OO~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~DG~~|
|dv/dt|Peak Diode Recoverydv/dt|–––|6.2|–––<br>~~OO~~|V/ns T<br>~~OO~~|V/ns TJ= 150°C,IS= 100A,VDS= 40V|
|trr<br>~~ee~~<br>~~ee~~|Reverse Recovery Time<br>~~ee~~<br>|–––<br>~~ee~~|21<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~<br>|TJ= 25°C<br>~~VR = 34V,~~|
|||–––<br>~~ee~~<br>|22<br>~~ee~~<br>|–––<br>~~ee~~<br>||TJ= 125°C<br>~~VR = 34V,~~<br>~~IF = 100A~~|
|Qrr<br>~~ee~~<br>~~ee~~|Reverse Recovery Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>|32<br>~~ee~~<br>|–––<br>~~ee~~<br>|nC<br>~~ee~~<br>|TJ= 25°C<br>~~IF = 100A~~<br>di/dt = 100A/µs|
|||–––<br>|38<br>|–––<br>||TJ= 125°C<br>di/dt = 100A/µs|
|IRRM<br>~~eepo~~|Reverse Recovery Current<br>~~po~~|–––<br>~~po~~|1.0<br>~~po~~|–––<br>~~po~~|A<br>~~po~~|TJ= 25°C|



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IRF40H210<br>TGR<br>10000 10000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>1000 8.0V 7.0V6.0V 1000 8.0V 7.0V 6.0V<br>5.0V 5.0V<br>4.5V 4.5V<br>100 BOTTOM 4.25V BOTTOM 4.25V<br>100<br>10<br>4.25V<br>4.25V 10<br>1<br>ant -<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25 ° C Tj = 150°C<br>0.1 agi 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>10000 2.0<br>ID = 100A<br>VGS = 10V<br>1000<br>rT] TTP<br>1.6<br>100<br>At TJ = 150°C 1.2 THA<br>10 rT TJ = 25°C an<br>0.8<br>1 pice 4<br>VDS = 10V<br>60µs PULSE WIDTH<br>TLL<br>0.1 aaa 0.4 ATT<br>2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 100A<br>C rss    = C gd  12.0 VDS= 32V<br>Coss  = Cds + Cgd VDS= 20V<br>10.0<br>| Fee<br>10000<br>Ciss 8.0<br>C oss 6.0<br>1000 Crss<br>4.0<br>ae Cl say ae<br>2.0<br>Al Annan<br>100 A iil, 0.0 At<br>0.1 1 10 100 0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 8.   Typical Gate Charge vs.<br>Fig 7.   Typical Capacitance vs. Drain-to-Source Voltage<br>Gate-to-Source Voltage<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 4 www.irf.com © 2015 International Rectifier ~~_ —..~~ 

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IRF40H210 ~~_......~~ 

## ~~IéaR~~ 

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10000<br>1000 OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000 100µsec<br>100<br>canae<br>1msec<br>100<br>10 Limited by Package<br>TJ = 150 ° C<br>10 o7/aue TJ = 25°C 1 en<br>10msec<br>1 eee 0.1 Tc = 25°C DC SS<br>VGS = 0V Tj = 150°C<br>Single Pulse<br>fee PON<br>0.1 0.01<br>0.1 SFeeee 0.4 0.7 1.0 1.3 1.6 1.9 0.1 1 10 A<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage  Fig 10.   Maximum Safe Operating Area<br>49<br>0.8<br>Id = 1.0mA<br>47<br>LTTE<br>0.6<br>45 LL ee<br>43<br>0.4<br>GRRE AGE<br>41<br>BEDZA0RRREE<br>0.2<br>PZAnRRRRaaE<br>39<br>STEEL<br>37<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 45<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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14<br>VGS = 5.0V<br>12 | [ft] VGS = 6.0V<br>VGS = 7.0V<br>aa VGS = 8.0V<br>10<br>wale VGS = 10V<br>8<br>6 ~//<br>yy<br>4 |<br>2<br>ee<br>0<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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IRF40H210 ~~[TT~~ 

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10<br>1<br>= D = 0.50 ee<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>eC<br>0.01<br>SINGLE PULSE<br>Notes:<br>seh ( THERMAL RESPONSE ) 2 il) BN BU<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 Beri 1E-005 AHA 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


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1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 125 ° C and<br>Tstart =25°C (Single Pulse)<br>|<br>100<br>Baa<br>10<br>Bn a i SS EU<br>1 TP<br>Allowed avalanche Current vs avalanche  aS<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 125°C.<br>PET<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Avalanche Current vs. Pulse Width<br>160<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>140 BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>ID = 100A 1.Avalanche failures assumption:<br>120 aBNI Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>100 NENEEERE part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>PN NET    exceeded.<br>80 TL<br>3. Equation below based on circuit and waveforms shown in Figures<br>PEINIAL     23a, 23b.<br>60<br>4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>EE ERNSNEEE 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>40<br> increase during avalanche).<br>PiTET  NNO 6. Iav = Allowable avalanche current.<br>20 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>Pity     (assumed as 25°C in Figure 15, 16).<br>0 TT ENN tav = Average time in avalanche.<br>25 50 75 100 125 150 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] 

      - EAS (AR) = PD (ave)·tav 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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4.5<br>IQR<br>4.0<br>ett<br>3.5<br>Pal PRL<br>3.0 | AS | PN<br>2.5 SaEED: ~<8<br>2.0 ID = 150µA<br>ID = 250µA eS<br>ID = 1.0mA<br>1.5 WL | | | de<br>ID = 1.0A<br>Sennen<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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10<br>IF = 100A<br>VR = 34V<br>8<br>TJ = 25°C<br>TJ = 125°C<br>sets<br>6<br>EEZ<br>4<br>Evan<br>2<br>TAL<br>a TTT<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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IRF40H210<br>10<br>Ce<br>IF = 60A<br>8 VR = 34V TT [ie<br>TJ = 25°C<br>TJ = 125°C<br>ee<br>6<br>4<br>TAT<br>4 a4<br>2<br>7]<br>0 yt<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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250<br>IF = 60A<br>VR = 34V<br>200<br>TJ = 25°C<br>TJ = 125°C<br>tre<br>150<br>aay<br>100<br>ee<br>50<br>aPZan<br>Ean<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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200<br>IF = 100A<br>VR = 34V<br>150 T J = 25°C<br>TJ = 125°C<br>100<br>50 | |<br>Ea<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th) '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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## **PQFN 5x6 Outline "B" Package Details** 

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf 

For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

## **PQFN 5x6 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>\<br>DATE CODE I eaR<br>XXXX P ART NUMBER<br>ASSEMBLY (“4 or 5 digits”)<br>SITE CODE XYWWX M ARKING CODE<br>(Per SCOP 200-002) (Per Marking Spec)<br>XXXXX<br>PIN 1 -®@ \<br>IDENTIFIER<br>LOT CODE<br>(Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

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## **PQFN Tape and Reel** 

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REEL DIMENSIONS<br>**----- End of picture text -----**<br>


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TAPE DIMENSIONS<br>**----- End of picture text -----**<br>


|CODE|DESCRIPTION|
|---|---|
|Ao|Dimension design to accommodate the component width|
|Bo<br>Ao|Dimension design to accommodate the component width<br>Dimension design to accommodate the component lenght|
|Ko|Dimension design to accommodate the component thickness|
|W|Overall width of the carrier tape|
|P1|Pitch between successive cavitycenters|



## **QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE** 

Note:  All dimension are nominal 

|Type<br>Package<br>Diameter<br>Reel<br>(Inch)|QTY|Width<br>Reel<br>W1<br>(mm)|(mm)<br>Ao|(mm)<br>Bo|(mm)<br>Ko|(mm)<br>P1|(mm)<br>W|Quadrant<br>Pin 1|
|---|---|---|---|---|---|---|---|---|
|5 X 6 PQFN<br>13|4000|12.4|6.300|5.300|1.20|8.00|12|Q1|



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 5mm x 6mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability 

†† Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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~~_~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRF40H210/power-mosfet-strongirfettm-n-channel-40-v-201-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf40h210/mosfet-n-ch-40v-201a-pqfn/dp/2781108)
---

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