# Power MOSFET, N Channel, 75 V, 140 A, 7000 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3155129/)

**URL**: https://novapart.co/products/IRF3808PBF/power-mosfet-n-channel-75-v-140-a-7000-ohm-to
**SKU**: IRF3808PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0300
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 140A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155129/)

PD - 94972A 

## IRF3808PbF 

## **Typical Applications** 

## HEXFET[®] Power MOSFET 

Industrial Motor Drive 

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**----- Start of picture text -----**<br>
D<br>VDSS = 75V<br>R  = 0.007 Ω<br>DS(on)<br>G<br>ID = 140A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Benefits** 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θ JC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of  applications. 

|~~TTT Oos—-—~_|_*“"—"-"-"-—_~~<br>~~TT~~<br>~~**—**————~~|**Parameter**<br>~~Oos—-—~_|_*“"—"-"-"-—_~~<br>~~OITI22,HT_—~~<br>~~————~~|**Max.**<br>~~Oos—-—~_|_*“"—"-"-"-—_~~<br>5|**Max.**<br>~~Oos—-—~_|_*“"—"-"-"-—_~~<br>5|**Units**<br>~~Oos—-—~_|_*“"—"-"-"-—_~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~TTT Oos—-—~_|_*“"—"-"-"-—_~~<br>~~TT~~<br>~~**—**————~~|Continuous Drain Current, VGS@ 10V<br>~~Oos—-—~_|_*“"—"-"-"-—_~~<br>~~OITI22,HT_—~~<br>~~————~~|140<br>~~Oos—-—~_|_*“"—"-"-"-—_~~<br>5||A<br>~~Oos—-—~_|_*“"—"-"-"-—_~~|
|ID@ TC= 100°C<br>~~TT~~<br>~~**—**————~~<br>~~——~~|Continuous Drain Current, VGS@ 10V<br>~~OITI22,HT_—~~<br>~~————~~<br>~~or~~|97<br>5|||
|IDM<br>~~**—**————~~<br>~~——~~|Pulsed Drain Current<br>~~————~~<br>~~or~~|550|||
|PD@TC= 25°C<br>~~**—**————~~<br>~~——~~<br>~~a~~|Power Dissipation<br>~~————~~<br>~~or~~<br>~~G~~|330<br>~~G~~||W<br>~~G~~|
|~~a~~<br>~~a~~|Linear DeratingFactor<br>~~G~~<br>~~G~~|2.2<br>~~G~~<br>~~G~~||W/°C<br>~~G~~|
|VGS<br>~~a~~<br>~~a~~|Gate-to-Source Voltage<br>~~a~~<br>~~G~~|± 20<br>~~a~~<br>~~G~~||V<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~G~~|430<br>~~G~~||mJ|
|IAR<br>~~i~~|Avalanche Current<br>~~i~~|82||A|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a~~<br>~~O~~|See Fig.12a, 12b, 15, 16<br>~~O~~||mJ<br>~~O~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.5<br>~~a~~||V/ns<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175||°C|
||SolderingTemperature, for 10 seconds<br>~~C~~|300(1.6mm from case)<br>~~C~~|||
|~~a~~|Mounting Torque, 6-32 or M3 screw<br>~~a~~<br>~~C~~|10 lbf•in (1.1N•m)<br>~~a~~<br>~~C~~||~~a~~|
|**Thermal Resistance**<br>~~C~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|0.45|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



HEXFET(R) is a registered trademark of International Rectifier. 

www.irf.com 

1 

## IRF3808PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|~~ee~~|~~ee~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es<br>~~ee~~|**Max.**<br>es<br>~~ee~~|**Units**<br>es|**Conditions**<br>es|
|V(BR)DSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~a~~|75<br>~~ee ~~<br>~~ee~~|–––<br> ~~ee ~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|∆V(BR)DSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~aee~~|–––|0.086|–––|V/°C|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~a~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~aee~~<br>~~a~~|–––|5.9|7.0|mΩ|VGS= 10V, ID= 82A<br>~~®~~|
|VGS(th)<br><br>~~a~~<br>~~PR~~|Gate Threshold Voltage<br>~~ee~~<br>~~a~~<br>~~PR~~|2.0<br>|–––<br>|4.0<br>|V<br>|VDS= 10V, ID= 250µA<br>~~®~~<br>|
|gfs<br>~~a~~<br>~~PR~~|Forward Transconductance<br>~~a~~<br>~~PR~~|100<br><br>~~ee~~|–––<br><br>~~e~~|–––<br><br>~~ee~~|S<br><br>~~e~~|VDS= 25V, ID= 82A<br><br>~~e~~|
|IDSS<br>~~PR~~|Drain-to-Source Leakage Current<br>~~PRee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~e~~|20<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~e~~|VDS= 75V, VGS= 0V<br>~~ee~~<br>~~e~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~e~~|250<br>~~ee~~<br>~~ee~~||VDS= 60V, VGS= 0V, TJ= 150°C<br>~~ee~~<br>~~e~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~**|**~~|–––<br>~~ee ~~<br>~~**|**~~|–––<br> ~~e~~|200<br>~~ee~~|nA<br>~~e~~|VGS= 20V<br>~~e~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|-200<br>~~ee~~||VGS= -20V|
|Qg<br>~~es~~|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|150<br>~~ee~~|220<br>~~ee~~|nC|ID= 82A<br>VDS= 60V<br>VGS= 10V<br>~~@~~|
|Qgs<br>~~es~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|31<br>~~ee~~|47<br>~~ee~~|||
|Qgd<br>~~es~~<br>~~Se~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~Se~~|–––<br>~~ee~~|50<br>~~ee~~|76<br>~~ee~~|||
|td(on)<br>~~Se~~|Turn-On Delay Time<br>~~Se~~<br>~~ee~~|–––<br>~~ee~~|16<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 38V<br>ID= 82A<br>RG= 2.5Ω<br>VGS= 10V<br>~~@~~|
|tr<br>a<br>es|Rise Time<br>~~ee~~|–––<br>~~ee~~|140<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>es|Turn-Off Delay Time|–––|68|–––|||
|tf<br>es|Fall Time|–––|120|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
|LS<br>~~of~~|Internal Source Inductance<br>~~of~~|–––|7.5|–––|nH||
|Ciss<br>~~of~~<br>es|Input Capacitance<br>~~of~~|–––|5310|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>ee|
|Coss<br>~~of~~<br>es<br>ee|Output Capacitance<br>~~of~~<br>~~ee~~|–––<br>~~ee~~|890<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>es<br>ee<br>es|Reverse Transfer Capacitance<br>~~ee~~<br>es|–––<br>~~ee~~|130<br>~~ee~~|–––<br>~~ee~~|||
|Coss<br>ee<br>es<br>ee|Output Capacitance<br>~~ee~~<br>es<br>ee|–––<br>~~ee~~<br>ee|6010<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>ee<br>ee|
|Coss<br>es <br>ee|Output Capacitance<br> es<br>ee|–––<br>ee|570|–––||VGS= 0V,  VDS= 60V,  ƒ = 1.0MHz<br>ee<br>ee|
|Cosseff.<br>ee|Effective Output Capacitance<br>ee|–––<br>ee|1140|–––||VGS= 0V, VDS= 0V to 60V<br>ee|
|**Source-Drain Ratings and Characteristics**|||||||
|~~>~~|**Parameter**<br>~~>~~|**Min.**<br>~~>~~|**Typ. **<br>~~>~~|**Max.**<br>~~>~~|**Units**|**Conditions**|
|IS<br>~~>~~<br>~~ee~~<br>~~Se~~|Continuous Source Current<br>(Body Diode)<br>~~>~~<br>~~ee~~|–––<br>~~>~~<br>~~ee~~<br>~~ed~~|–––<br>~~>~~<br>~~ee~~|140<br>~~>~~<br>~~ee~~||S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~@~~|
|ISM<br>a~~ee~~<br>~~Se~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~|–––<br>~~ee~~<br>~~ed~~|–––<br>~~ee~~|550<br>~~ee~~|||
|VSD<br>~~Se~~<br>~~————~~|Diode Forward Voltage<br>~~————~~|–––<br>~~ed~~<br>~~es~~|–––|1.3|V|TJ= 25°C, IS= 82A, VGS= 0V<br>~~@~~<br>~~®~~|
|trr<br>~~Se~~<br>~~es~~<br>~~————~~|Reverse Recovery Time<br>~~es~~<br>~~————~~|–––<br>~~ed~~<br>~~es~~<br>~~es~~|93<br>~~es~~|140<br>~~es~~|ns<br>~~es~~|TJ= 25°C, IF= 82A<br>di/dt = 100A/µs<br>~~@~~<br>~~®~~|
|Qrr<br>~~Se~~<br>~~————~~|Reverse RecoveryCharge<br>~~————~~|–––<br>~~ed~~<br>~~es~~|340|510|nC||
|ton<br>~~————~~<br>~~Po~~|Forward Turn-On Time<br>~~————~~<br>~~Po~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~es~~<br>~~®~~<br>~~Po~~|||||



Notes: ~~o~~ Repetitive rating;  pulse width limited by ® Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . 

- @ Starting TJ = 25°C, L = 0.130mH © 

- RG = 25 Ω , IAS = 82A. (See Figure 12). @ ISD ≤ 82A, di/dt ≤ 310A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C @ 

Calculated continuous current based on maximum allowable 

junction temperature. Package limitation current is 75A. 

@ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

www.irf.com 

2 

IRF3808PbF 

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**----- Start of picture text -----**<br>
 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V i eI 7.0V a<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V M200 mea 5.0V i ie oo canl<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100 eee) Zam ll  100 | AA ||<br>> 4c eee etiiil mse See  SSmeeiilia 4.5V mean<br>ED 24 ==-- 4.5V mel ED 40 eeeel<br>7 >a a ill em<br> 10 AZ |  10 PAN |<br>| Pete EET<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br> 1 Co co T  = 25J ° C  1 t l T  = 175J ° C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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1000.00 3.0<br>I D = 137A<br>e e ee ee ee ee Po EET TT ET<br>a 2.5 Ft ttt ttt tt<br>ee, aa TJ = 175°C PT EET PE EELLLY<br>an y<br>a 4a | 2.0 tt<br>100.00 Se Ae 1.5 eeeeeeeedenn<br>(Eees||eseses ee HEEVA<br>ela TJ = 25°C 1.0 SEES? 4eReEEnEE<br>ee ee ee toet<br>ee 0.5 tt tt | tt<br> Oe VDS = 15V att<br>10.00 ee ee 20µs PULSE WIDTH 0.0 PTetT eet Et e Ey V  yy GS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 °<br>T  , Junction TemperatureJ (  C)<br>VGS, Gate-to-Source Voltage (V)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3 

## IRF3808PbF 

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100000 12<br>— —Le VCGS  iss    = C = 0V,       f = 1 MHZgs + Cgd,   Cds    SHORTED | ID = 82A VVDSDS ==  60V 37V | |<br>Crss    = Cgd  10 VDS =  15V<br>rt Coss   = Cds + Cgd ff ft | GY<br>10000 8<br>FRee — Ciss a Y4A<br>a ee ee eee 6 Uy<br>R E | | | | yw | |<br>1000 e t S Coss n 4 a<br>eeaEHSeeAeeee ee 2 YF | | | | ff<br>Crss<br>100 ee EPEAT| 0 Aea ee eee eee<br>0 40 80 120 160<br>1 10 100<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>GS<br>C, Capacitance(pF) V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

## **Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000.00<br>100.00 TJ = 175°C<br>ee 0 ee ee ee ee<br>10.00<br>e n<br>T = 25°C<br>J<br>Pf fp<br>1.00<br>p f] ff |<br>I le ie VGS = 0V<br>0.10 ee<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>Poe INQ ss<br>100<br>PN SBMTT<br>100µsec<br>10 e ee SC 1msec<br>EN ll<br>Tc = 25°C<br>Tj = 175°C<br>HT | TLS 10msec el<br>Single Pulse<br>1 Si aii:<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

4 

## IRF3808PbF 

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**----- Start of picture text -----**<br>
140<br>120 |P|PS| ANE LIMITED BY PACKAGE EE|Ce[| | Ves vos 7 DUTRo<br>100 Pett AS Re —<br>-<br>| | | | yl | {| | tf<br>80 HERPES<br>≤ 1<br>60 SeePt tt teeeEEeeeNeeEEE Pulse Widths ≤ 0.1 % I<br>40 Pt tT tt EE Fig 10a.   Switching Time Test Circuit<br>Pt TEN<br>20 Pt tt tt tt EE NY VDSDS<br>Pt tt tt TE TE LN 90%<br>0 Pi tt | | | | | | yt Y J \<br>25 50 tT tT 75 tT tet 100 ft 125 tt 150 fy 175 | |<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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VDSDS<br>90%<br>J \<br>|<br>10% /\ A<br>VGS |\« le >|ay,pl<<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
 1<br>aa ee ——__.._..... |...<br>D = 0.50 =<br>T IT<br>0.1 e 0.20 e eepss ee ed |<br>0.10<br>= es ee eee<br>Pe me |<br>e 0.05 s,<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) P DM<br>saa anl e e llee el<br>0.01<br>t 1<br>ey ee ee ee ee ee Oe Oe DO GG GGG GO OOO t 2<br>a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>a ono 2. Peak T J = P DM x  Z thJC + T C<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>(Z        )thJC<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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5 

## IRF3808PbF 

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15V 800 ID<br>TOP 34A<br>58A<br>VDS L DRIVER 640 Nee BOTTOM 82A<br>BNE<br>R G D.U.T + 480 NAVE<br>- [V][DD]<br>IAS A<br>i KXNIN<br>20V<br>aoa tp 0.01 Ω 320 PNUN| EL<br>ae SGa en<br>Fig 12a.   Unclamped Inductive Test Circuit Po ORKAN LE<br>V(BR)DSS<br>160<br>_. tp pt SSN<br>0 Pf Et ud SL<br>25 50 75 100 125 150<br>/\\ See S N ° EE<br>Starting Tj, Junction Temperature (   C)<br>IAS a a<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
wwf QGS ~ QQ ~ GDG 7<br>VG<br>oo<br>Charge _<br>Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>ae<br>50K Ω<br>12V .2 µ F<br>rls .3 µ F<br>+<br>ce D.U.T. -VDS<br>VGS<br>3mA<br>of |<br>an IG bowe ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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**----- Start of picture text -----**<br>
3.5<br>3.0<br>P NET<br>ID = 250µA<br>2.5<br>H N ae<br>2.0<br>T ANT<br>1.5<br>EE ELY<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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## IRF3808PbF 

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**----- Start of picture text -----**<br>
1000<br>Duty Cycle = Single Pulse<br>PEATE FEET Fee Eee ETE ETT<br>ROE TIP Pf ppp py A_ Allowed avalanche Current vs  RA<br>100 0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>FP PP SALERRO avalanche losses HH]<br>SP E eIN<br>o 0.05 t PU E T<br>0.10<br>10<br>PE EPS<br>P a eeSSS ETH<br>A | | |<br>TH CUT EEE |<br>1<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current Vs.Pulsewidth 

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**----- Start of picture text -----**<br>
500<br>a ni TOP          Single Pulse<br>BOTTOM   10% Duty Cycle<br>400 ID = 140A<br>a nal<br>300<br>P ING TE<br>PING EEE<br>200 P ET ING EE<br>Pt TE<br>100<br>P it TNE<br>Pit it i NE<br>0 Pi} E Te]ET|EUANANE ET<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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7 

## IRF3808PbF 

**==> picture [273 x 443] intentionally omitted <==**

**----- Start of picture text -----**<br>
‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•   D.U.T. - Device Under Test<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>‘<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current @ Current =, =<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


## For N-channel HEXFET[®] power MOSFETs 

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8 

## IRF3808PbF 

**==> picture [271 x 59] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1O10<br>IN THE ASSEMBLY LINE "C" LOGO TOR 019¢<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB package is not recommended for Surface Mount Application 

**Notes:** 

## **1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

9 



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- [Supplier page](https://es.farnell.com/infineon/irf3808pbf/mosfet-n-ch-75v-140a-175deg-c/dp/3155129)
---

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