# Power MOSFET, N Channel, 55 V, 210 A, 3300 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2579974/)

**URL**: https://novapart.co/products/IRF3805PBF/power-mosfet-n-channel-55-v-210-a-3300-ohm-to
**SKU**: IRF3805PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1200
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 210A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579974/)

## PD - 97046A 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching 

Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRF3805PbF IRF3805SPbF IRF3805LPbF 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 3.3m Ω<br>DS(on)<br>G<br>ID = 75A<br>S<br>**----- End of picture text -----**<br>


TO-220AB D[2] Pak TO-262 IRF3805PbF IRF3805SPbF IRF3805LPbF 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~Le~~|210<br>~~Le~~|A<br>~~a~~<br>~~a~~<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~Le~~|150<br>~~Le~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package limited)<br>~~Le~~<br>~~a~~|75<br>~~Le~~<br>~~a~~||
|IDM|Pulsed Drain Current<br>~~Le~~<br>~~a~~|890<br>~~Le~~<br>~~a~~||
|PD@TC= 25°C|Power Dissipation|300|W|
||Linear Derating Factor<br>~~a~~|2.0<br>~~a~~|W/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>~~Le~~|± 20<br>~~Le~~|V<br>~~Le~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~Le~~<br>~~a~~|650<br>~~Le~~<br>~~a~~|mJ<br>~~Le~~<br>~~a~~|
|EAS(Tested)|Single Pulse Avalanche Energy Tested Value<br>~~a~~|940<br>~~a~~||
|IAR|Avalanche Current<br>~~a~~<br>~~oo~~|See Fig.12a, 12b, 15, 16<br>~~a~~<br>~~oo~~<br>~~po~~|A<br>~~a~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~po~~||mJ<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~<br>~~a~~|Soldering Temperature, for 10 seconds<br>~~po~~<br>~~a~~|300 (1.6mm from case )<br>~~po~~||
|~~po~~<br>~~a~~|MountingTorque,6-32 or M3 screw<br>~~po~~<br>~~a~~|10 lbf in (1.1N m)<br>~~po~~|~~po~~|



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~ns~~|**Typ.**<br>~~Gn~~|**Max. **<br>~~Gn~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~Rs~~|55<br>~~Rs~~<br>~~ns~~<br>~~es~~|–––<br>~~Rs~~<br>~~Gn~~<br>~~de~~|–––<br>~~Rs~~<br>~~Gn~~<br>~~de~~|V<br>~~Rs~~|VGS= 0V,ID= 250µA<br>~~Rs~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~ns ~~<br>~~es~~<br>~~es~~<br>~~es~~|0.051<br> ~~Gn~~<br>~~es~~<br>~~de~~<br>~~ds~~|–––<br>~~Gn~~<br>~~es~~<br>~~de~~<br>~~ds~~|V/°C<br>~~es~~|Reference to 25°C,ID= 1mA<br>~~es~~<br>~~I~~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ed~~|–––<br>~~es ~~<br>~~ed~~<br>~~es~~<br>~~Sd~~|2.6<br> ~~de~~<br>~~ed~~<br>~~ds~~<br>~~Sd~~|3.3<br>~~de~~<br>~~ed~~<br>~~ds~~<br>~~es~~|mΩ<br>~~ed~~|VGS= 10V,ID= 75A<br>~~ed~~<br>~~I~~~|
|VGS(th)|Gate Threshold Voltage<br>~~ed~~<br>~~Ps~~|2.0<br>~~ed~~<br>~~es ~~<br>~~Ps~~<br>~~Sd~~|–––<br>~~ed~~<br> ~~ds~~<br>~~Ps~~<br>~~Sd~~|4.0<br>~~ed~~<br>~~ds~~<br>~~Ps~~<br>~~es~~|V<br>~~ed~~<br>~~Ps~~|VDS= VGS,ID= 250µA<br>~~ed~~<br>~~I~~~<br>~~Ps~~|
|gfs|Forward Transconductance|75<br>~~Sd~~|–––<br>~~Sd~~|–––<br>~~es~~|V|VDS= 25V,ID= 75A|
|IDSS|Drain-to-Source Leakage Current<br>~~LE~~|–––<br>~~LE~~|–––<br>~~LE~~|20<br>~~LE~~|µA<br>~~LE~~|VDS= 55V,VGS= 0V<br>~~LE~~|
|||–––<br>~~LE~~|–––<br>~~LE~~|250<br>~~LE~~||VDS= 55V,VGS= 0V,TJ= 125°C<br>~~LE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~LE~~<br>~~ee~~<br>~~**|**~~|–––<br>~~LE~~<br>~~ee~~<br>~~**|**~~|–––<br>~~LE~~<br>~~ee~~|200<br>~~LE~~<br>~~ee~~|nA<br>~~LE~~<br>~~ee~~|VGS= 20V<br>~~LE~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~**|**~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|-200<br>~~ee~~||VGS= -20V<br>~~ee~~|
|Qg|Total Gate Charge<br>~~ee~~<br>~~**|**~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~**|**~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|190<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~**ee**~~|290<br>~~ee~~<br>~~es~~|nC<br>~~ee~~|VGS= 10V<br>ID= 75A<br>VDS= 44V<br>~~ee~~<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|52<br> ~~es~~<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|72<br>~~**ee**~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~es ~~<br>~~ee~~|–––<br>~~ee ~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|150<br> ~~**ee**~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 28V<br>ID= 75A<br>RG= 2.6Ω<br>VGS= 10V<br>~~®~~<br>ee|
|tr|Rise Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|20<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|93<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~|87<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~FH~~|–––<br>~~ee~~<br>~~FH~~|4.5<br>~~ee~~<br>~~FH~~|–––<br>~~ee~~<br>~~FH~~|nH<br>~~FH~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>ee<br>~~&~~|
|LS|Internal Source Inductance<br>~~ee~~<br>~~FH~~|–––<br>~~ee~~<br>~~FH~~<br>~~ee~~|7.5<br>~~ee~~<br>~~FH~~<br>~~ee~~|–––<br>~~ee~~<br>~~FH~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|7960<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1260<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|630<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|4400<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**e**e~~|–––<br>~~ee~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|980<br> ~~ee~~<br>~~ee~~<br>~~**e**e~~<br>~~s~~|–––<br>~~ee~~||VGS= 0V,VDS= 44V, ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~ee~~|1550<br>~~**e**e~~<br>~~s~~|–––||VGS= 0V,VDS= 0V to 44V<br>~~@~~|



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>nny Commnn 7.0V CL YA 7.0V<br>6.0V 6.0V<br>100 ge 5.5V5.0V SaBHIOY Zana 5.5V5.0V<br>fon BOTTOM 4.5V matty Alii BOTTOM 4.5V<br>LO iy Aa<br>Zameen | 100 =i<br>We 4.5V Crh FO er<br>10<br>Lapeer srt | > Aviemmni| eel<br>ESSE ESS YY<br>| Yall<br>4.5V<br>≤  60µs PULSE WIDTH ≤  60µs PULSE WIDTH<br>1 PEA Tj = 25°C | 10 ZC Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 200<br>T = 25°C<br>a a en J<br>TJ = 175°C 160<br>100.0<br>jt 7A} td 7)<br>Ae) ee 120 —T_ TJ = 175°C<br>10.0<br>T = 25°C<br>J  80<br>1.0<br>Ba Uf<br>VDS = 20V 40<br>| [of] ≤  60µs PULSE WIDTH VDS = 10V<br>0.1 fp | 380µs PULSE WIDTH<br>5 Jo<br>4.0 5.0 6.0 7.0 8.0 0<br>0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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14000 20<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID= 75A VDS= 44V<br>12000<br>Crss   = Cgd  16 VDS= 28V<br>C = C + C<br>tT] oss   ds  gd GE S<br>10000<br>pt Ciss 12 Banepa<br>8000 | ll A<br>6000 Samo «=COL 8 | | LA<br>4000<br>| 4 an e<br>Coss<br>2000<br>Crss<br>SS p A<br>ill 0<br>0<br>0 50 100 150 200 250 300<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>T = 175°C<br>J  1000<br>100.0<br>1 00µsµs ec<br>100<br>10.0 10m se c<br>10 1mm sec<br>TJ = 25°C<br>1.0<br>1<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 0.1<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>1000<br>1 00µsµs ec<br>100<br>10m se c<br>10 1mm sec<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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Fig 7.   Typical Source-Drain Diode<br>Forward Voltage<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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240 2.0<br>LIMITED BY PACKAGE ID = 75A<br>200 VGS = 10V<br>160 | At 1.5 Frenne ce<br>| | HA<br>Fos)<br>120<br>P TT EPA<br>80 POPP) 1.0 PLETE<br>pot | tl. AC<br>40<br>PTT  TTA pecan<br>0<br>PPT TN 0.5 ELLER<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>1<br>D = 0.50 So ert}<br>0.1 0.20<br>0.10<br>0.05<br>— cot rer R1 R1 R2 R2 0 Ri (°C/W ee ) ee  τ i (sec)<br>0.01 0.02 0.01 τ J τ J τ C τ 0.2653     0.001016<br>τ 1 τ 1 τ 2 τ 2 0.2347     0.012816<br>0.001 ee a e ee Ci= Ci τ i / Rii / Ri rl LI<br>SINGLE PULSE Notes:<br>ee aan ( THERMAL RESPONSE ) aeliea 1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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2000<br>                 I<br>D<br>TOP          15A        15A<br>1600                 20A<br>BOTTOM   75A  75A<br>1200<br>800<br>Nae<br>ACCEL<br>400<br>SST<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>J) | TS<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>                 I<br>D<br>TOP          15A        15A<br>1600                 20A<br>VDS L DRIVER BOTTOM   75A  75A<br>RG D.U.T + 1200<br>- [V][DD]<br>IAS A<br>20VVGS<br>A tp , 0.01 Ω 800 Nae<br>ACCEL<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS 400<br>7 tp SST<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>ma J) | TS<br>IAS 7<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br>QG<br>QGS QGD 4.5<br>VG 4.0<br>ID = 250µAD = 250µA= 250µA<br>A 3.5 POTTS<br>Charge<br>= APNE<br>Fig 13a.   Basic Gate Charge Waveform 3.0<br>Current Regulator<br>Same Type as D.U.T.<br>ng 2.5 CoP<br>50K Ω<br>12V .2 µ F<br>.3 µ F 2.0<br>The + SORRRREANG<br>D.U.T. -VDS<br>1.5<br>VGS -75 -50 -25 0 25 50 75 100 125 150<br>ue CETTE<br>3mA TJ , Temperature ( °C )<br>oe K<br>IG ID<br>Current Sampling Resistors<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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4.5<br>4.0<br>ID = 250µAD = 250µA= 250µA<br>S<br>3.5 APNE<br>3.0<br>2.5 CoP<br>2.0<br>SORRRREANG<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>CETTE<br>TJ , Temperature ( °C )<br>K<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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**Fig 13b.** Gate Charge Test Circuit 6 

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10000<br>Duty Cycle = Single Pulse<br>1000 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>PC ETPSNOE THA EE avalanche losses. Note: In no  FH<br>0.01<br>100 case should Tj be allowed to<br>exceed Tjmax<br>0.05<br>0. 1 0<br>10<br>ae ee e:<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>800 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 75A   Purely a thermal phenomenon and failure occurs at a<br>600 ll     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>400 NG 3. Equation below based on circuit and waveforms shown in<br>BNNG<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>DSU 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>200<br>    voltage increase during avalanche).<br>BASS 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>LELELLTSSSA     Tjmax (assumed as 25°C in Figure 15, 16).<br>0<br>  tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TER 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB package is not recommended for Surface Mount Application 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

9 

**==> picture [235 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL cS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 002L<br>80 24 DATE CODE<br>ASSEMBLY YEAR 0 =  2000<br>assembly line position LOT CODE b eef 7 WEEK 02<br>“Lead — Free” u u LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TOR P0024 DATE CODE<br>8024 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE Woya uy ne, YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [243 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>Note: "P" in assembly lineASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO TOR (| 17IRL3103L719C89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRL3103L<br>LOGO TEMRP719A<br>DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

11 

**==> picture [255 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>i i ‘ ai 0.342 (.0135)<br>ZN<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>— 1.65 (.065) 1 rom 11.40 (.449) 15.42 (.609)15.22 (.601) Lf 24.30 (.957)23.90 (.941)<br>TRL<br>tie<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>eae 16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>, 12.80 (.504) 23.90 (.941) _ 4 dp<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB. 26.40 (1.039)24.40 (.961) ar 4<br>5 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Notes: ®® Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

@ Limited by TJmax, starting TJ = 25°C, L = 0.23mH © RG = 25 Ω , IAS = 75A, VGS =10V. Part not recommended for use above this value. @) ® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

© This value determined from sample failure population. 100% tested to this value in production. 

This is only applied to TO-220AB pakcage. 

This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

R θ is measured at TJ of approximately 90°C. TO-220 device will have an Rth of 0.45°C/W. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

12 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF3805PBF/power-mosfet-n-channel-55-v-210-a-3300-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf3805pbf/mosfet-n-ch-55v-210a-to-220ab/dp/2579974)
---

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